JPH04281240A - Production of magneto-optical recording medium - Google Patents
Production of magneto-optical recording mediumInfo
- Publication number
- JPH04281240A JPH04281240A JP4462791A JP4462791A JPH04281240A JP H04281240 A JPH04281240 A JP H04281240A JP 4462791 A JP4462791 A JP 4462791A JP 4462791 A JP4462791 A JP 4462791A JP H04281240 A JPH04281240 A JP H04281240A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magneto
- gas
- recording medium
- recording layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010410 layer Substances 0.000 claims abstract description 79
- 239000007789 gas Substances 0.000 claims abstract description 45
- 238000004544 sputter deposition Methods 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000011241 protective layer Substances 0.000 claims abstract description 23
- 239000012298 atmosphere Substances 0.000 claims abstract description 6
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 6
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 238000005121 nitriding Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 238000004381 surface treatment Methods 0.000 abstract description 2
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000005755 formation reaction Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- UWZNAPXGNZDCSI-UHFFFAOYSA-N dioxosilane terbium Chemical compound [Si](=O)=O.[Tb] UWZNAPXGNZDCSI-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000002335 surface treatment layer Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- JSUSQWYDLONJAX-UHFFFAOYSA-N iron terbium Chemical compound [Fe].[Tb] JSUSQWYDLONJAX-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910017061 Fe Co Inorganic materials 0.000 description 1
- FOPBMNGISYSNED-UHFFFAOYSA-N [Fe].[Co].[Tb] Chemical compound [Fe].[Co].[Tb] FOPBMNGISYSNED-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は光磁気記録媒体の製造方
法に係り、特にオーバーライト方法が可能な光磁気記録
媒体の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a magneto-optical recording medium, and more particularly to a method of manufacturing a magneto-optical recording medium that allows an overwrite method.
【０００２】近来、光磁気記録のデータ転送速度を向上
させる光磁気ディスクとして、ポリカーボネイト樹脂（
ＰＣ樹脂）、またはガラス基板上に２Ｐ（フォトポリマ
ー）樹脂を塗布後、紫外線で硬化させた２Ｐガラス基板
上にテルビウム・二酸化珪素（Ｔｂ− ＳｉＯ２） 膜
よりなる下部保護層を形成し、その上に希土類−遷移金
属アモルファス合金のテルビウム・鉄（Ｔｂ−Ｆｅ）膜
よりなる記録層、テルビウム・鉄・コバルト（Ｔｂ−Ｆ
ｅ−Ｃｏ）膜よりなる補助層、テルビウム・二酸化珪素
（Ｔｂ− ＳｉＯ２） 膜よりなる上部保護層を、順次
この順に積層して形成した光磁気記録媒体が開発されて
いる。Recently, polycarbonate resin (
After coating a 2P (photopolymer) resin on a glass substrate (PC resin) or a glass substrate, a lower protective layer made of a terbium silicon dioxide (Tb-SiO2) film is formed on the 2P glass substrate that is cured with ultraviolet light, and then A recording layer consisting of a rare earth-transition metal amorphous alloy terbium-iron (Tb-Fe) film, a terbium-iron-cobalt (Tb-F
A magneto-optical recording medium has been developed in which an auxiliary layer made of a terbium-silicon dioxide (Tb-SiO2) film and an upper protective layer made of a terbium-silicon dioxide (Tb-SiO2) film are laminated in this order.
【０００３】そしてキューリ点と保磁力の温度に対する
勾配が、相互に異なる記録層と補助層の二層構造の光磁
気記録媒体を形成し、この二層構造の光磁気記録媒体に
光変調したレーザ光を照射することで、光磁気ディスク
が一回転する間に、光磁気記録の消去と記録を同時に行
い得るオーバーライト方式が開発されている。[0003] Then, a magneto-optical recording medium is formed with a two-layer structure consisting of a recording layer and an auxiliary layer in which the Curie point and the gradient of coercive force with respect to temperature are different from each other, and a laser beam modulated with light is applied to the magneto-optical recording medium of this two-layer structure. An overwrite method has been developed that allows erasing and recording of magneto-optical records at the same time during one revolution of the magneto-optical disk by irradiating it with light.
【０００４】0004
【従来の技術】従来、このような光磁気記録媒体を製造
する第１の方法として本出願人は以前に特願平２−１４
４１７６号に於いて、前記記録層を成膜後、補助層を成
膜する迄に該記録層を成膜するスパッタ容器内へのスパ
ッタガスの供給を停止した状態で放置し、この記録層上
に僅かの厚さの中間層を形成し、この中間層がオーバー
ライトする際の光磁気記録媒体に磁界を印加した時、磁
界の向きを容易にシフトさせるようにして、低記録バイ
アス磁界でオーバーライトが可能な光磁気記録媒体の製
造方法、および該方法で形成した光磁気記録媒体を提案
している。BACKGROUND OF THE INVENTION Conventionally, as a first method for manufacturing such magneto-optical recording media, the present applicant has previously published Japanese Patent Application No. 2-14
In No. 4176, after forming the recording layer, the supply of sputtering gas to the sputtering vessel in which the recording layer is formed is stopped until the auxiliary layer is formed, and the sputtering gas is left on the recording layer. When a magnetic field is applied to the magneto-optical recording medium during overwriting, this intermediate layer easily shifts the direction of the magnetic field. A method for manufacturing a writable magneto-optical recording medium and a magneto-optical recording medium formed by the method are proposed.
【０００５】また第２の方法として特開昭６４−７８４
５０号に於いて、タンタルをターゲットとして体積分率
で酸素を２０〜４０％含むアルゴン雰囲気内で、光磁気
ディスク用干渉膜を製造することが開示されている。[0005] Also, as a second method, Japanese Patent Application Laid-Open No. 1984-784
No. 50 discloses manufacturing an interference film for a magneto-optical disk in an argon atmosphere containing 20 to 40% oxygen by volume using tantalum as a target.
【０００６】また第３の方法として特開昭６３−５３７
３５号に於いて、透明基板上に希土類元素と遷移金属元
素よりなり、膜面に垂直方向に磁気異方性を有する記録
層を形成する際、該記録層上に希土類元素と遷移金属元
素よりなり窒素を含有する保護膜を形成することが開示
されている。[0006] Also, as a third method, Japanese Patent Application Laid-Open No. 63-537
In No. 35, when forming a recording layer made of a rare earth element and a transition metal element on a transparent substrate and having magnetic anisotropy in the direction perpendicular to the film surface, a layer made of a rare earth element and a transition metal element is formed on the recording layer. It is disclosed that a protective film containing nitrogen is formed.
【０００７】[0007]
【発明が解決しようとする課題】然し、第１の方法では
、前記した中間層を形成するのに、スパッタガスを止め
て成膜しているために僅かの厚さの中間層を形成するの
に長時間の処理を必要とし、製造工数が掛り過ぎる難点
がある。[Problems to be Solved by the Invention] However, in the first method, the sputtering gas is stopped to form the intermediate layer, so it is difficult to form the intermediate layer with a small thickness. The problem is that it requires a long processing time and takes too many manufacturing steps.
【０００８】また第２の方法では、干渉膜をタンタルを
ターゲットとして、酸素を含むアルゴンガス雰囲気内で
成膜しており、この干渉膜の厚さが８０ｎｍあり、この
形成に長時間を要し、またタンタルターゲットを用いて
おり、このターゲットは酸化し易いおそれがある。In the second method, the interference film is formed using tantalum as a target in an argon gas atmosphere containing oxygen, and the thickness of this interference film is 80 nm, which requires a long time to form. Also, a tantalum target is used, and this target may be easily oxidized.
【０００９】また第３の方法では、ターゲットをスパッ
タして、１００ 〜２０００Åの厚さの保護層を設けて
おり、このような厚さの保護膜を形成するには、長時間
の成膜時間を必要とする。[0009] In the third method, a target is sputtered to form a protective layer with a thickness of 100 to 2000 Å, and forming a protective film with such a thickness requires a long film formation time. Requires.
【００１０】本発明は上記した従来の欠点を除去し、短
時間で記録層と補助層の境界面に極く微小な厚さの記録
層の酸化層、或いは窒化層を形成することで、短時間の
処理で容易にオーバーライトを可能とした光磁気記録媒
体の製造方法、或いは該製造方法で成膜した光磁気記録
媒体の提供を目的とする。The present invention eliminates the above-mentioned conventional drawbacks and forms an extremely thin oxide layer or nitride layer of the recording layer on the interface between the recording layer and the auxiliary layer in a short time. The object of the present invention is to provide a method for manufacturing a magneto-optical recording medium that can be easily overwritten by time processing, or a magneto-optical recording medium formed by the method.
【００１１】[0011]
【課題を解決するための手段】本発明の光磁気記録媒体
の製造方法は、基板上に下部保護層、希土類−遷移金属
アモルファス合金膜の記録層と補助層より成る二層構造
の記録膜、および上部保護層をこの順に積層して成る光
磁気記録媒体の製造に於いて、前記記録層を成膜後、該
記録層表面をスパッタ用ガスと酸素ガス、或いはスパッ
タ用ガスと窒素ガスとの混合ガス雰囲気内に曝して表面
処理し、該記録層膜面を酸化、或いは窒化した後、上部
保護層を形成することを特徴とする。また上記した製造
方法で形成した光磁気記録媒体を特徴とする。[Means for Solving the Problems] The method for manufacturing a magneto-optical recording medium of the present invention includes a recording film having a two-layer structure consisting of a lower protective layer, a recording layer of a rare earth-transition metal amorphous alloy film, and an auxiliary layer on a substrate; In manufacturing a magneto-optical recording medium in which a top protective layer and an upper protective layer are laminated in this order, after forming the recording layer, the surface of the recording layer is treated with a sputtering gas and an oxygen gas, or a sputtering gas and a nitrogen gas. It is characterized in that the upper protective layer is formed after surface treatment is performed by exposing the recording layer to a mixed gas atmosphere and the surface of the recording layer is oxidized or nitrided. The present invention also features a magneto-optical recording medium formed by the above manufacturing method.
【００１２】0012
【作用】記録層は補助層よりも室温で保磁力が大きく、
キュリー温度が低い材料を用いている。[Function] The recording layer has a larger coercive force at room temperature than the auxiliary layer,
Materials with low Curie temperatures are used.
【００１３】そしてオーバーライトは記録層と補助層と
の間に働く交換結合力を利用して、行われ、この交換結
合力によって記録層、および補助層の保磁力がそれぞれ
単層の保磁力に比較してシフトし易くなる。この保磁力
のシフトを利用してオーバーライトが行われる。この交
換結合力は記録層と補助層との境界面の界面状態に依っ
て大きい影響を受け、オーバーライト可能な光磁気記録
媒体を安定して得るためには、この界面状態を安定な状
態に保つことが必要である。[0013] Overwriting is performed by utilizing the exchange coupling force acting between the recording layer and the auxiliary layer, and this exchange coupling force causes the coercivity of the recording layer and the auxiliary layer to be equal to that of the single layer. It becomes easier to shift compared. Overwriting is performed using this shift in coercive force. This exchange coupling force is greatly affected by the interfacial state at the interface between the recording layer and the auxiliary layer, and in order to stably obtain an overwritable magneto-optical recording medium, it is necessary to maintain this interfacial state in a stable state. It is necessary to maintain it.
【００１４】この界面状態は、記録層をスパッタ法で成
膜後、補助層を成膜する際のスパッタ容器内の残留ガス
や、スパッタ容器内の真空度に依って変化するため、記
録層を成膜後、スパッタガスと酸素ガスとの混合ガス雰
囲気、或いはスパッタガスと窒素ガスとの混合ガス雰囲
気内で記録層表面を短時間曝し、この境界面を極く僅か
に窒化、或いは酸化し、その上に補助層を作成すると、
記録層と補助層との境界面の界面状態が安定し、記録層
と補助層の間の交換結合力の制御が安定して行うことが
でき、これによってピット長を１μｍ とした時のオー
バーライト後のＣ／Ｎの値として、５０ｄＢ以上の値が
再現性良く、安定して得られた。This interface state changes depending on the residual gas in the sputtering container when forming the auxiliary layer after the recording layer is formed by sputtering, and the degree of vacuum in the sputtering container. After film formation, the surface of the recording layer is exposed for a short time in a mixed gas atmosphere of sputtering gas and oxygen gas, or in a mixed gas atmosphere of sputtering gas and nitrogen gas, to nitridize or oxidize this interface very slightly. If you create an auxiliary layer on top of it,
The interface state at the interface between the recording layer and the auxiliary layer is stabilized, and the exchange coupling force between the recording layer and the auxiliary layer can be controlled stably, which allows overwriting when the pit length is 1 μm. As the subsequent C/N value, a value of 50 dB or more was stably obtained with good reproducibility.
【００１５】[0015]
【実施例】以下、図面を用いて本発明の実施例に付き詳
細に説明する。本発明の第１実施例を図１、および図２
を用いて説明する。Embodiments Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. A first embodiment of the present invention is shown in FIGS. 1 and 2.
Explain using.
【００１６】図１、および図２に示すようにポリカーボ
ネイト、或いはガラスよりなる基板１をスパッタ容器２
内に設置し、該容器２内にバルブ３を開いて排気管４に
連なる排気ポンプ（図示せず）を用いて１×１０−４Ｐ
ａ程度の真空度になる迄排気する。As shown in FIGS. 1 and 2, a substrate 1 made of polycarbonate or glass is placed in a sputtering container 2.
1×10-4P by opening the valve 3 in the container 2 and using an exhaust pump (not shown) connected to the exhaust pipe 4.
Evacuate until the degree of vacuum is approximately a.
【００１７】次いでバルブ５ を開いて、スパッタ容器
２ 内にアルゴン（ Ａｒ） ガスよりなるスパッタガ
スをガス導入管８より導入し、該容器２内の圧力が０．
５Ｐａ のガス圧に成るようにする。Next, the valve 5 is opened, and sputtering gas consisting of argon (Ar) gas is introduced into the sputtering container 2 through the gas introduction tube 8 until the pressure inside the container 2 reaches 0.
Adjust the gas pressure to 5Pa.
【００１８】次いでテルビウム−二酸化珪素（Ｔｂ−Ｓ
ｉＯ２） よりなる保護層形成用ターゲット６上に基板
１を移動し、該基板１と保護層形成用ターゲット６間に
高周波電力を印加し、ＲＦマグネトロンスパッタ法を用
いて、１００ｎｍ の厚さのＴｂ− ＳｉＯ２膜よりな
る下部保護層２１を形成する。Next, terbium-silicon dioxide (Tb-S
The substrate 1 was moved onto a protective layer forming target 6 made of iO2), high frequency power was applied between the substrate 1 and the protective layer forming target 6, and Tb with a thickness of 100 nm was applied using RF magnetron sputtering. - Form a lower protective layer 21 made of SiO2 film.
【００１９】次いで、スパッタガスは０．５Ｐａ のガ
ス圧のアルゴンガスを用い、該基板１をテルビウム−鉄
（Ｔｂ−Ｆｅ）合金の記録層形成用ターゲット７上に移
動し、５０ｎｍの厚さのＴｂ− Ｆｅ膜よりなり、保磁
力が１５ＫＯｅ 以上、キュリー温度１４０ ℃の記録
層２２を形成する。Next, using argon gas at a gas pressure of 0.5 Pa as a sputtering gas, the substrate 1 is moved onto a recording layer forming target 7 made of a terbium-iron (Tb-Fe) alloy, and a 50 nm thick sputtering layer is formed. A recording layer 22 is formed of a Tb-Fe film having a coercive force of 15 KOe or more and a Curie temperature of 140°C.
【００２０】次いで記録層２２を成膜後、バルブ５ を
閉じてバルブ９ を開き、ガス導入管１０より、０．５
Ｐａ のガス圧で酸素ガスがアルゴンガス中に容量比で
１０％混合された混合ガスを、スパッタ容器２内に流し
、この混合ガスに記録層２２を１ 分間曝した。After forming the recording layer 22, the valve 5 is closed, the valve 9 is opened, and 0.5
A mixed gas in which 10% by volume of oxygen gas was mixed with argon gas at a gas pressure of Pa was flowed into the sputtering container 2, and the recording layer 22 was exposed to this mixed gas for 1 minute.
【００２１】この混合ガス中に曝す場合は、保護層形成
用ターゲット６ 、記録層形成用ターゲット７ 、補助
層形成用ターゲット１１の各種のターゲットと基板１
間にはスパッタ用の電圧は印加せず、単に混合ガス内に
記録層表面を曝すのみの簡単な工程である。When exposed to this mixed gas, various targets such as the protective layer forming target 6, the recording layer forming target 7, and the auxiliary layer forming target 11 and the substrate 1 are exposed to the mixed gas.
This is a simple process in which the surface of the recording layer is simply exposed to a mixed gas without applying a voltage for sputtering.
【００２２】このようにして記録層２２上には、記録層
が極く僅か酸化された表面処理層２３が形成される。次
いでバルブ９ を閉じ、バルブ５を開いてスパッタガス
として０．５Ｐａ のガス圧のアルゴンガスをスパッタ
容器２ 内に流し、基板をＴｂ−Ｆｅ−Ｃｏ合金の補助
層形成用ターゲット１１上に移動し、この表面処理を終
了した記録層２２の上に１００ｎｍ の厚さのＴｂ−
Ｆｅ−Ｃｏ 膜よりなり、保磁力が３ＫＯｅ、のＴＭリ
ッチでキュリー温度２００ ℃の補助層２４を形成する
。In this manner, a surface treatment layer 23 is formed on the recording layer 22, in which the recording layer is slightly oxidized. Next, valve 9 was closed, valve 5 was opened, and argon gas at a gas pressure of 0.5 Pa was flowed into sputtering container 2 as sputtering gas, and the substrate was moved onto target 11 for forming an auxiliary layer of Tb-Fe-Co alloy. , a 100 nm thick Tb-
The auxiliary layer 24 is made of a Fe--Co film, has a coercive force of 3 KOe, is TM rich, and has a Curie temperature of 200°C.
【００２３】次いでスパッタガスは、０．５Ｐａ のガ
ス圧のアルゴンガスとして、基板１を保護層形成用ター
ゲット６上に移動し、補助層２４上に１００ｎｍ の厚
さのＴｂ− ＳｉＯ２膜よりなる上部保護層２５を形成
する。Next, the sputtering gas is argon gas at a gas pressure of 0.5 Pa, and the substrate 1 is moved onto the target 6 for forming a protective layer, and an upper part made of a Tb-SiO2 film with a thickness of 100 nm is formed on the auxiliary layer 24. A protective layer 25 is formed.
【００２４】このような本発明の光磁気記録媒体を１０
回成膜し、ピット長さを１．０ μｍ とし、線速を１
０ｍ／ｓｅｃ とした時のオーバーライト後のＣ／Ｎ
の値は、多数回の何れの成膜時でも５５ｄＢの値が安定
して得られた。[0024] Such a magneto-optical recording medium of the present invention
The film was deposited twice, with a pit length of 1.0 μm and a line speed of 1.
C/N after overwriting at 0m/sec
A value of 55 dB was stably obtained during any of the multiple film formations.
【００２５】ちなみに、従来の方法で成膜した光磁気記
録媒体では、ピット長さを１．０ μｍとし、線速を１
０ｍ／ｓｅｃ とした時のオーバーライト後のＣ／Ｎ
の値は４０〜５５ｄＢの範囲内でばらついていた。Incidentally, in a magneto-optical recording medium formed by a conventional method, the pit length is 1.0 μm and the linear velocity is 1.
C/N after overwriting at 0m/sec
The values varied within a range of 40 to 55 dB.
【００２６】第２ 実施例は、前記した記録層２２迄を
形成する工程は第１実施例と同様にして、記録層２２を
形成した後、バルブ５ を閉じ、バルブ９ を開いて、
ガス導入管１０より０．５Ｐａ のガス圧で窒素ガスが
アルゴンガス中に容量比で１０％混合された混合ガスを
スパッタ容器２ 内に流し、この混合ガスを用いて記録
層の表面を２分間曝し、この記録層２２の表面を極く僅
か窒化処理して表面処理層２３を形成した。In the second embodiment, the steps up to the recording layer 22 described above are performed in the same manner as in the first embodiment, and after forming the recording layer 22, the valve 5 is closed, the valve 9 is opened, and
A gas mixture of 10% by volume of nitrogen gas and argon gas is flowed into the sputtering container 2 at a gas pressure of 0.5 Pa from the gas introduction pipe 10, and the surface of the recording layer is coated with this gas mixture for 2 minutes. The surface of the recording layer 22 was subjected to a slight nitriding treatment to form a surface treatment layer 23.
【００２７】この混合ガス中に曝す場合は、各種のター
ゲットと基板間にはスパッタ用の電圧は印加せず、単に
混合ガス内に曝すのみの簡単な工程である。次いで前記
した第１ 実施例と同様な条件でに補助層２４、上部保
護層２５を形成して光磁気記録媒体を形成した。このよ
うな本発明の光磁気記録媒体を１０回成膜し、ピット長
さを１．０ μｍ とし、線速を１０ｍ／ｓｅｃ とし
た時のオーバーライト後のＣ／Ｎ の値は、何れの成膜
時でも５５ｄＢの値が安定して得られた。When exposing to this mixed gas, a sputtering voltage is not applied between the various targets and the substrate, and it is a simple process of simply exposing them to the mixed gas. Next, an auxiliary layer 24 and an upper protective layer 25 were formed under the same conditions as in the first example described above to form a magneto-optical recording medium. When the magneto-optical recording medium of the present invention is deposited 10 times, the pit length is 1.0 μm, and the linear velocity is 10 m/sec, the C/N value after overwriting is Even during film formation, a stable value of 55 dB was obtained.
【００２８】ちなみに、従来の方法で成膜した光磁気記
録媒体では、ピット長さを１．０ μｍとし、線速を１
０ｍ／ｓｅｃ とした時のオーバーライト後のＣ／Ｎ
の値は４０〜５５ｄＢの範囲内でばらついていた。By the way, in a magneto-optical recording medium formed by a conventional method, the pit length is 1.0 μm and the linear velocity is 1.
C/N after overwriting at 0m/sec
The values varied within a range of 40 to 55 dB.
【００２９】[0029]
【発明の効果】以上述べたように、本発明の方法により
、記録層と補助層との間の交換結合力の制御が容易とな
り、本発明の方法に依って成膜した光磁気記録媒体を用
いるとピット長さを１．０ μｍ とし、線速を１０ｍ
／ｓｅｃ とした時のオーバーライト後のＣ／Ｎの値は
、何れの成膜時でも５５ｄＢの値が安定して得られる効
果がある。As described above, the method of the present invention makes it easy to control the exchange coupling force between the recording layer and the auxiliary layer, and the magneto-optical recording medium formed by the method of the present invention can be easily controlled. When used, the pit length is 1.0 μm and the linear speed is 10 m.
/sec, the C/N value after overwriting can stably obtain a value of 55 dB in any film formation process.
【図１】 図１は本発明の方法で形成した光磁気記録
媒体の断面図である。FIG. 1 is a cross-sectional view of a magneto-optical recording medium formed by the method of the present invention.
【図２】 図２は本発明の光磁気記録媒体の製造方法
に用いる装置の説明図である。FIG. 2 is an explanatory diagram of an apparatus used in the method for manufacturing a magneto-optical recording medium of the present invention.
１ 基板、 ２ スパッタ容器 ３，５，９ バルブ ４ 排気管 ６ 保護層形成用ターゲット ７ 記録層形成用ターゲット ８，１０ ガス導入管 １１ 補助層形成用ターゲット ２１ 下部保護層 ２２ 記録層 ２３ 表面処理層 ２４ 補助層 ２５ 上部保護層 1 Substrate, 2 Sputtering container 3, 5, 9 valve 4 Exhaust pipe 6 Target for forming protective layer 7 Target for recording layer formation 8,10 Gas introduction pipe 11 Target for forming auxiliary layer 21 Lower protective layer 22 Recording layer 23 Surface treatment layer 24 Auxiliary layer 25 Upper protective layer
Claims (1)
、希土類−遷移金属アモルファス合金膜の記録層（２２
）と補助層（２４）より成る二層構造の記録膜、および
上部保護層（２５）をこの順に積層して成る光磁気記録
媒体の製造に於いて、前記記録層（２２）を成膜後、該
記録層表面をスパッタ用ガスと酸素ガス、或いはスパッ
タ用ガスと窒素ガスとの混合ガス雰囲気内に曝して表面
処理し、該記録層表面を酸化、或いは窒化した後、上部
保護層（２５）を形成することを特徴とする光磁気記録
媒体の製造方法。[Claim 1] A lower protective layer (21) on a substrate (1).
, recording layer of rare earth-transition metal amorphous alloy film (22
), an auxiliary layer (24), and an upper protective layer (25) in this order, in the production of a magneto-optical recording medium, after forming the recording layer (22). , the surface of the recording layer is treated by exposing it to a mixed gas atmosphere of sputtering gas and oxygen gas, or sputtering gas and nitrogen gas, and after oxidizing or nitriding the surface of the recording layer, an upper protective layer (25 ) A method for manufacturing a magneto-optical recording medium, the method comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4462791A JP2929745B2 (en) | 1991-03-11 | 1991-03-11 | Method for manufacturing magneto-optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4462791A JP2929745B2 (en) | 1991-03-11 | 1991-03-11 | Method for manufacturing magneto-optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04281240A true JPH04281240A (en) | 1992-10-06 |
| JP2929745B2 JP2929745B2 (en) | 1999-08-03 |
Family
ID=12696667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4462791A Expired - Fee Related JP2929745B2 (en) | 1991-03-11 | 1991-03-11 | Method for manufacturing magneto-optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2929745B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0910076A2 (en) * | 1997-10-14 | 1999-04-21 | Sony Corporation | Magneto-optical disc and manufacturing method thereof |
| EP1045381A2 (en) * | 1999-04-16 | 2000-10-18 | Sony Corporation | Magneto-optical disk |
-
1991
- 1991-03-11 JP JP4462791A patent/JP2929745B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0910076A2 (en) * | 1997-10-14 | 1999-04-21 | Sony Corporation | Magneto-optical disc and manufacturing method thereof |
| EP0910076A3 (en) * | 1997-10-14 | 2000-11-15 | Sony Corporation | Magneto-optical disc and manufacturing method thereof |
| EP1045381A2 (en) * | 1999-04-16 | 2000-10-18 | Sony Corporation | Magneto-optical disk |
| EP1045381A3 (en) * | 1999-04-16 | 2000-11-15 | Sony Corporation | Magneto-optical disk |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2929745B2 (en) | 1999-08-03 |
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