JPH0427688B2 - - Google Patents

Info

Publication number
JPH0427688B2
JPH0427688B2 JP9796183A JP9796183A JPH0427688B2 JP H0427688 B2 JPH0427688 B2 JP H0427688B2 JP 9796183 A JP9796183 A JP 9796183A JP 9796183 A JP9796183 A JP 9796183A JP H0427688 B2 JPH0427688 B2 JP H0427688B2
Authority
JP
Japan
Prior art keywords
electron beam
vacuum
degree
gas
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9796183A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59224115A (ja
Inventor
Shuichi Saito
Kohei Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP9796183A priority Critical patent/JPS59224115A/ja
Publication of JPS59224115A publication Critical patent/JPS59224115A/ja
Publication of JPH0427688B2 publication Critical patent/JPH0427688B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP9796183A 1983-06-03 1983-06-03 電子ビ−ムアニ−ル方法 Granted JPS59224115A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9796183A JPS59224115A (ja) 1983-06-03 1983-06-03 電子ビ−ムアニ−ル方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9796183A JPS59224115A (ja) 1983-06-03 1983-06-03 電子ビ−ムアニ−ル方法

Publications (2)

Publication Number Publication Date
JPS59224115A JPS59224115A (ja) 1984-12-17
JPH0427688B2 true JPH0427688B2 (enrdf_load_stackoverflow) 1992-05-12

Family

ID=14206264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9796183A Granted JPS59224115A (ja) 1983-06-03 1983-06-03 電子ビ−ムアニ−ル方法

Country Status (1)

Country Link
JP (1) JPS59224115A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003017433A (ja) 2001-06-28 2003-01-17 Tokyo Electron Ltd チャンバセンサポート

Also Published As

Publication number Publication date
JPS59224115A (ja) 1984-12-17

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