JPH04275486A - Aluminum nitride board - Google Patents
Aluminum nitride boardInfo
- Publication number
- JPH04275486A JPH04275486A JP3697191A JP3697191A JPH04275486A JP H04275486 A JPH04275486 A JP H04275486A JP 3697191 A JP3697191 A JP 3697191A JP 3697191 A JP3697191 A JP 3697191A JP H04275486 A JPH04275486 A JP H04275486A
- Authority
- JP
- Japan
- Prior art keywords
- pts
- aln
- metallized layer
- aluminum nitride
- titanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 15
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 21
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 150000003609 titanium compounds Chemical class 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 7
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001856 Ethyl cellulose Substances 0.000 abstract description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 abstract description 3
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 abstract description 3
- 229940088601 alpha-terpineol Drugs 0.000 abstract description 3
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 3
- 229920001249 ethyl cellulose Polymers 0.000 abstract description 3
- 235000019325 ethyl cellulose Nutrition 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 abstract 1
- 229910001000 nickel titanium Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は窒化アルミニウム基板に
関し、特に電子装置に使用されるLSIが実装される窒
化アルミニウム基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to aluminum nitride substrates, and more particularly to aluminum nitride substrates on which LSIs used in electronic devices are mounted.
【0002】0002
【従来の技術】従来、この種の窒化アルミニウム(Al
N)基板は、表面に印刷配線を行うためのメタライズ層
の形成に、金あるいは銀−パラジウムが用いられている
。[Prior Art] Conventionally, this type of aluminum nitride (Al
N) Gold or silver-palladium is used to form a metallized layer on the surface of the substrate for printed wiring.
【0003】0003
【発明が解決しようとする課題】上述した従来の窒化ア
ルミニウム(AlN)基板は、メタライズ層に金あるい
は銀−パラジウムが用いられ、このメタライズ層を形成
する方法としては厚膜法が知られている。しかしながら
これらの厚膜法では、約600〜1000℃程度の温度
でメタライズ層を形成するため、高温化においてAlN
焼結基板とメタライズ層との接合強度が低下するという
欠点がある。[Problems to be Solved by the Invention] In the conventional aluminum nitride (AlN) substrate described above, gold or silver-palladium is used for the metallized layer, and a thick film method is known as a method for forming this metallized layer. . However, in these thick film methods, the metallized layer is formed at a temperature of about 600 to 1000°C, so AlN
There is a drawback that the bonding strength between the sintered substrate and the metallized layer is reduced.
【0004】0004
【課題を解決するための手段】本発明の窒化アルミニウ
ム基板は、窒化アルミニウム焼結基板上にニッケルおよ
びチタン化合物を含有する導電性メタライズ層が形成さ
れ、また前記チタン化合物は炭化チタン又は窒化チタン
の少なくとも一方を含んでいる。[Means for Solving the Problems] The aluminum nitride substrate of the present invention has a conductive metallized layer containing a nickel and titanium compound formed on a sintered aluminum nitride substrate, and the titanium compound is made of titanium carbide or titanium nitride. Contains at least one of them.
【0005】[0005]
【実施例】次に、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.
【0006】図1は本発明の一実施例についての製造工
程の一例を示す図である。FIG. 1 is a diagram showing an example of a manufacturing process for an embodiment of the present invention.
【0007】図1を用いて本実施例についての製造工程
について説明する。The manufacturing process of this embodiment will be explained using FIG. 1.
【0008】第1工程でニッケル1の粉末95重量部と
炭化チタン2の5重量部とを混合する。In the first step, 95 parts by weight of powder of nickel 1 and 5 parts by weight of titanium carbide 2 are mixed.
【0009】第2工程では第1工程で得られた混合物の
80重量部をエチルセルロース4の16重量部とα−テ
ルピネオール3の4重量部に分散せしめペースト化する
。In the second step, 80 parts by weight of the mixture obtained in the first step is dispersed in 16 parts by weight of ethyl cellulose 4 and 4 parts by weight of α-terpineol 3 to form a paste.
【0010】第3工程では第2工程で得られたペースト
を厚膜印刷法によりAlN焼結体(基板)5上に7〜2
0μmの膜厚になるように塗布する。In the third step, the paste obtained in the second step is coated on the AlN sintered body (substrate) 5 by a thick film printing method.
Coat to a film thickness of 0 μm.
【0011】第4工程では第3工程のAlN焼結体(基
板)5を乾燥機で乾燥し、第5工程で1300℃,30
分間窒素ガス中で加熱する。In the fourth step, the AlN sintered body (substrate) 5 of the third step is dried in a dryer, and in the fifth step, the AlN sintered body (substrate) 5 is dried at 1300°C and 30°C.
Heat in nitrogen gas for minutes.
【0012】上述の工程の結果、AlN基板5上にニッ
ケルおよび炭化チタンを含有する導電性のメタライズ層
が形成される。As a result of the above steps, a conductive metallized layer containing nickel and titanium carbide is formed on the AlN substrate 5.
【0013】このようにして得られたメタライズ層とA
lN焼結体(基板)5との接合強度を測定すると、測定
方法の一例としてメタライズ層面に銅製ピンを半田付け
し、万能引張試験器を用いて行った場合、その結果、接
合強度2.9Kg/mm2 が得られ、実用上十分であ
る高い接合強度が得られている。The metallized layer thus obtained and A
When measuring the bonding strength with the IN sintered body (substrate) 5, as an example of the measurement method, a copper pin was soldered to the surface of the metallized layer and a universal tensile tester was used. As a result, the bonding strength was 2.9 kg. /mm2, and a high bonding strength that is sufficient for practical use is obtained.
【0014】なお、この接合強度測定の際、AlN焼結
体5の一部がえぐり取られるモードが大半を占めており
、実際の接合強度はさらに大きいと推察される。[0014] In this bonding strength measurement, the mode in which a part of the AlN sintered body 5 is gouged out accounts for the majority, and it is presumed that the actual bonding strength is even greater.
【0015】またこのメタライズ層をX線回折により分
析したところ、ニッケル1と炭化チタン2と窒化チタン
との3種が観察された。窒化チタンは上述の第2工程の
ペースト中に含まれていた炭化チタン2がAlN焼結体
5又は窒素ガスと反応して窒化チタンになったものと考
えられる。When this metallized layer was analyzed by X-ray diffraction, three types were observed: nickel 1, titanium carbide 2, and titanium nitride. It is thought that titanium nitride was formed by reacting titanium carbide 2 contained in the paste in the second step with the AlN sintered body 5 or nitrogen gas to form titanium nitride.
【0016】本実施例におけるメタライズ層の形成方法
は上述した厚膜印刷法の他、スパッタリング法、メッキ
法等によっても形成可能である。また炭化チタン2及び
窒化チタンは当初から供給されるかあるいはメタライズ
形成プロセス中に生成するかどちらの場合でもよい。In addition to the above-mentioned thick film printing method, the metallized layer in this embodiment can also be formed by sputtering, plating, or the like. Further, titanium carbide 2 and titanium nitride may be supplied from the beginning or may be generated during the metallization forming process.
【0017】[0017]
【発明の効果】以上説明したように本発明の窒化アルミ
ニウム基板は、窒化アルミニウム(AlN)焼結基板上
にニッケルおよびチタン化合物を含有する導電性メタラ
イズ層が形成されて、チタン化合物が炭化チタン又は窒
化チタンの少なくとも一方を含んでいることにより、基
板を構成するAlN焼結基板とメタライズ層とが従来の
基板より高い接合強度を示しているので、AlN焼結基
板が本来有している高熱伝導性と併せ、信頼性の高い高
集積・高電力の電子回路用基板として用いることができ
る効果がある。As explained above, in the aluminum nitride substrate of the present invention, a conductive metallized layer containing nickel and a titanium compound is formed on a sintered aluminum nitride (AlN) substrate, and the titanium compound is made of titanium carbide or titanium. By containing at least one side of titanium nitride, the AlN sintered substrate and the metallized layer that make up the substrate exhibit higher bonding strength than conventional substrates, so the AlN sintered substrate inherently has high thermal conductivity. In addition to this, it has the advantage that it can be used as a highly reliable, highly integrated, high power electronic circuit board.
【図1】本発明の一実施例についての製造工程の一例を
示す図である。FIG. 1 is a diagram showing an example of a manufacturing process for an embodiment of the present invention.
1 ニッケル 2 炭化チタン 3 α−テルピネオール 4 エチルセルロース 5 AlN焼結体 1 Nickel 2 Titanium carbide 3 α-Terpineol 4 Ethylcellulose 5 AlN sintered body
Claims (2)
ルおよびチタン化合物を含有する導電性メタライズ層が
形成されてなることを特徴とする窒化アルミニウム基板
。1. An aluminum nitride substrate, characterized in that a conductive metallized layer containing nickel and titanium compounds is formed on a sintered aluminum nitride substrate.
化チタンの少なくとも一方を含んでいることを特徴とす
る請求項1記載の窒化アルミニウム基板。2. The aluminum nitride substrate according to claim 1, wherein the titanium compound contains at least one of titanium carbide and titanium nitride.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3697191A JPH04275486A (en) | 1991-03-04 | 1991-03-04 | Aluminum nitride board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3697191A JPH04275486A (en) | 1991-03-04 | 1991-03-04 | Aluminum nitride board |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04275486A true JPH04275486A (en) | 1992-10-01 |
Family
ID=12484634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3697191A Pending JPH04275486A (en) | 1991-03-04 | 1991-03-04 | Aluminum nitride board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04275486A (en) |
-
1991
- 1991-03-04 JP JP3697191A patent/JPH04275486A/en active Pending
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