JPH04275486A - Aluminum nitride board - Google Patents

Abstract

PURPOSE:To enhance a connecting strength of a metallized layer to an AlN sintered board higher than that of the prior art. CONSTITUTION:95 pts.wt. nickel powder 1 and 5 pts.wt. titanium carbide are mixed in the first step. In the second step, 80 pts.wt. mixture obtained in the first step is dispersed in 16 pts.wt. ethylcellulose 4 and 4 pts.wt. alpha-terpineol 3 to be paste. In the step, the paste obtained in the second step so coats 7-20mum thick on a sintered AlN (board) 5 by a thick film printing method. In the fourth stee, the AlN 5 of the third step is dried by a drier, and heated at 1300 deg.C for 30 min in nitrogen gas in the fifth step. As a result of the above steps, a conductive metallized layer containing nickel titanium carbide is formed on the board 5.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to aluminum nitride substrates, and more particularly to aluminum nitride substrates on which LSIs used in electronic devices are mounted.

0002

[Prior Art] Conventionally, this type of aluminum nitride (Al
N) Gold or silver-palladium is used to form a metallized layer on the surface of the substrate for printed wiring.

0003

[Problems to be Solved by the Invention] In the conventional aluminum nitride (AlN) substrate described above, gold or silver-palladium is used for the metallized layer, and a thick film method is known as a method for forming this metallized layer. . However, in these thick film methods, the metallized layer is formed at a temperature of about 600 to 1000°C, so AlN
There is a drawback that the bonding strength between the sintered substrate and the metallized layer is reduced.

0004

[Means for Solving the Problems] The aluminum nitride substrate of the present invention has a conductive metallized layer containing a nickel and titanium compound formed on a sintered aluminum nitride substrate, and the titanium compound is made of titanium carbide or titanium nitride. Contains at least one of them.

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a diagram showing an example of a manufacturing process for an embodiment of the present invention.

The manufacturing process of this embodiment will be explained using FIG. 1.

In the first step, 95 parts by weight of powder of nickel 1 and 5 parts by weight of titanium carbide 2 are mixed.

In the second step, 80 parts by weight of the mixture obtained in the first step is dispersed in 16 parts by weight of ethyl cellulose 4 and 4 parts by weight of α-terpineol 3 to form a paste.

In the third step, the paste obtained in the second step is coated on the AlN sintered body (substrate) 5 by a thick film printing method.
Coat to a film thickness of 0 μm.

In the fourth step, the AlN sintered body (substrate) 5 of the third step is dried in a dryer, and in the fifth step, the AlN sintered body (substrate) 5 is dried at 1300°C and 30°C.
Heat in nitrogen gas for minutes.

As a result of the above steps, a conductive metallized layer containing nickel and titanium carbide is formed on the AlN substrate 5.

The metallized layer thus obtained and A
When measuring the bonding strength with the IN sintered body (substrate) 5, as an example of the measurement method, a copper pin was soldered to the surface of the metallized layer and a universal tensile tester was used. As a result, the bonding strength was 2.9 kg. /mm2, and a high bonding strength that is sufficient for practical use is obtained.

[0014] In this bonding strength measurement, the mode in which a part of the AlN sintered body 5 is gouged out accounts for the majority, and it is presumed that the actual bonding strength is even greater.

When this metallized layer was analyzed by X-ray diffraction, three types were observed: nickel 1, titanium carbide 2, and titanium nitride. It is thought that titanium nitride was formed by reacting titanium carbide 2 contained in the paste in the second step with the AlN sintered body 5 or nitrogen gas to form titanium nitride.

In addition to the above-mentioned thick film printing method, the metallized layer in this embodiment can also be formed by sputtering, plating, or the like. Further, titanium carbide 2 and titanium nitride may be supplied from the beginning or may be generated during the metallization forming process.

[0017]

As explained above, in the aluminum nitride substrate of the present invention, a conductive metallized layer containing nickel and a titanium compound is formed on a sintered aluminum nitride (AlN) substrate, and the titanium compound is made of titanium carbide or titanium. By containing at least one side of titanium nitride, the AlN sintered substrate and the metallized layer that make up the substrate exhibit higher bonding strength than conventional substrates, so the AlN sintered substrate inherently has high thermal conductivity. In addition to this, it has the advantage that it can be used as a highly reliable, highly integrated, high power electronic circuit board.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing an example of a manufacturing process for an embodiment of the present invention.

[Explanation of symbols]

1 Nickel 2 Titanium carbide 3 α-Terpineol 4 Ethylcellulose 5 AlN sintered body

Claims (2)

[Claims] 1. An aluminum nitride substrate, characterized in that a conductive metallized layer containing nickel and titanium compounds is formed on a sintered aluminum nitride substrate. 2. The aluminum nitride substrate according to claim 1, wherein the titanium compound contains at least one of titanium carbide and titanium nitride.