JPH042698A - Thin film base and production thereof - Google Patents
Thin film base and production thereofInfo
- Publication number
- JPH042698A JPH042698A JP2103033A JP10303390A JPH042698A JP H042698 A JPH042698 A JP H042698A JP 2103033 A JP2103033 A JP 2103033A JP 10303390 A JP10303390 A JP 10303390A JP H042698 A JPH042698 A JP H042698A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- base
- substrate
- axis
- srtio3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims 1
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract description 13
- 239000010453 quartz Substances 0.000 abstract description 11
- 230000010287 polarization Effects 0.000 abstract description 6
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000000843 powder Substances 0.000 description 7
- 239000005350 fused silica glass Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000002887 superconductor Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Inorganic Insulating Materials (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は焦電形赤外線センサ、圧電素子、電気光学素子
、メモリ素子、キャパシタなどに用いられる強誘電体薄
膜や高速トランジスタ、微小電磁場センサ等に用いられ
る超伝導薄膜を作製するための基板に関するものである
。Detailed Description of the Invention (Field of Industrial Application) The present invention is applicable to ferroelectric thin films used in pyroelectric infrared sensors, piezoelectric elements, electro-optical elements, memory elements, capacitors, high-speed transistors, minute electromagnetic field sensors, etc. The present invention relates to a substrate for producing superconducting thin films used in
（従来の技術）
強誘電体や超伝導体のエレクトロニクス分野における応
用は上記の素子等さまざまなものがある。(Prior Art) There are various applications of ferroelectrics and superconductors in the electronics field, including the above-mentioned devices.
近年の半導体技術の進歩による電子部品の小型化、集積
化にともない、これらの素子も小型化。Along with the miniaturization and integration of electronic components due to recent advances in semiconductor technology, these elements have also become smaller.
薄膜化が進みつつある。Films are becoming thinner.
強誘電体を応用する場合には、分極軸が基板に垂直に向
いていることが望ましい。ＢａＴｉ０．（チタン酸バリ
ウム）の結晶構造は正方晶で強誘電分極の向きは（００
１）方向であり、Ｐ ｂ （Ｔ ｘ Ｚ ｒ ） Ｏａ
（チタン酸ジルコン酸鉛）の分極の大きい組成の結晶
構造も正方晶で強誘電分極の向きは［００１３方向であ
る。したがって（００１）軸が基板に垂直に向いている
ことが望ましい。When applying ferroelectric materials, it is desirable that the polarization axis be oriented perpendicular to the substrate. BaTi0. The crystal structure of (barium titanate) is tetragonal, and the direction of ferroelectric polarization is (00
1) direction, P b (T x Z r ) Oa
The crystal structure of (lead zirconate titanate) having a composition with large polarization is also tetragonal, and the direction of ferroelectric polarization is the [0013 direction. Therefore, it is desirable that the (001) axis is oriented perpendicular to the substrate.
酸化物の超伝導体のＹＢａ２Ｃｕ、０７の結晶構造は斜
方晶で（１００）と（０１０）方向に電流が流れ易く、
臨界電流密度も大きいことが知られている。したがって
応用の観点から、これも基板に垂直に［００１］軸を並
べることが望ましい。The crystal structure of the oxide superconductor YBa2Cu, 07 is orthorhombic, and current flows easily in the (100) and (010) directions.
It is known that the critical current density is also large. Therefore, from an application standpoint, it is also desirable to align the [001] axes perpendicularly to the substrate.
薄膜を作製する基板には、セラミクス、単結晶、アモル
ファス物質、金属等が用いられるが、酸化物の薄−を作
製し゛た場合、基板の種類と作゛製条件によって、結晶
の方位が変わり易い０石英は、耐熱性に優れ熱膨張係数
が非常に小さいので基板としては優れているが、アモル
ファス型であり、結晶性酸化物をその上に配向させるこ
とは困難である。またＳｌは半導体集積回路基板として
大量に使用されているが、共有結合の非酸化物であるの
で、その上に酸化物をエピタキシャル的に成長させるこ
とは困難である。上記の強誘電体や超伝導体に関して、
溶融石英およびＳｉ上に特定の結晶軸が配向したという
報告はない。Ceramics, single crystals, amorphous materials, metals, etc. are used as substrates for producing thin films, but when producing thin oxide films, the orientation of the crystals tends to change depending on the type of substrate and production conditions. Although quartz is excellent as a substrate because it has excellent heat resistance and a very small coefficient of thermal expansion, it is amorphous and it is difficult to orient crystalline oxides thereon. Further, although Sl is used in large quantities as a semiconductor integrated circuit substrate, it is a covalently bonded non-oxide, so it is difficult to epitaxially grow an oxide thereon. Regarding the above ferroelectrics and superconductors,
There is no report that specific crystal axes are oriented on fused silica and Si.
【発明が解決しようと゛する課題）
一般には、ＢａＴｉＯ３やＰ ｂ （Ｔ ｘ Ｚ ｒ
） Ｏｓ、あるいはＹ Ｂ ａｘ Ｃｕｓ Ｏ７の（０
０１）軸が確実に基板に垂直に配向することはない。[Problem to be solved by the invention] Generally, BaTiO3 and P b (T x Z r
) Os, or Y B ax Cus O7 (0
01) The axis is never reliably oriented perpendicular to the substrate.
本発明の目的は、石英やＳｉ基板上に設けたＳｒＴｉＯ
３上に基板面に垂直に（００１）軸を配向させたＢａＴ
ｉ０．のような強誘電体薄膜およびＹ Ｂ ａｔ Ｃｕ
、 Ｏｔのような超伝導薄膜が得られるような基板を得
ることである。The purpose of the present invention is to provide SrTiO on a quartz or Si substrate.
3 with the (001) axis oriented perpendicular to the substrate surface.
i0. Ferroelectric thin films such as Y B at Cu
, to obtain a substrate on which a superconducting thin film such as Ot can be obtained.
（課題を解決するための手段）
基板として１石英あるいはＳｉを用い、その上にＳｒＴ
ｉＯ３を、一定の条件でスパッタリングを行うことによ
って、基板に垂直に（１００３軸を配向させる。この基
板を用いることによってＢａＴｉ０．のような強誘電体
薄膜およびＹＢａ、Ｃｕ、Ｏ，めような超伝導薄膜の（
００１）軸が配向するものである。(Means for solving the problem) A quartz or Si substrate is used, and SrT
By sputtering iO3 under certain conditions, the 1003 axis is oriented perpendicular to the substrate. By using this substrate, ferroelectric thin films such as BaTi0. Conductive thin film (
001) The axis is oriented.
（作 用）
基板として２石英およびＳｉ１選ぶ、基板上に（１００
）軸が基板に垂直に配向したＳ ｒ Ｔ ｉ Ｏｓ薄膜
を形成する。適当なガス圧力および基板温度では、Ｓｒ
ＴｉＯ３薄膜の［１０Ｇ］軸が基板面に垂直に揃って；
薄膜はエピタキシャル的に配向成長する。このような５
ｒＴｉｏ、を形成した基板は、Ｂ ａ Ｔ ｉ Ｏｓや
ＹＢａ、Ｃｕ、Ｏ，の（００１）軸を基板に垂直に配向
させるように働く。(Function) Select 2 quartz and Si1 as the substrate, place (100
) Form a S r Ti Os thin film with the axis oriented perpendicular to the substrate. At appropriate gas pressures and substrate temperatures, Sr
The [10G] axis of the TiO3 thin film is aligned perpendicular to the substrate surface;
The thin film is grown epitaxially and oriented. 5 like this
The substrate on which rTio is formed functions to orient the (001) axes of B a T i Os, YBa, Cu, and O perpendicularly to the substrate.
（実施例） 石英、Ｓｉ基板上にＳｒＴｉＯ３薄膜を作製する。(Example) A SrTiO3 thin film is produced on a quartz or Si substrate.
次にこの５ｒＴｉＯｓ薄膜上に、強誘電体の例としてＢ
ａＴｉ０．薄膜および超伝導体の例としてＹ Ｂ ａｍ
Ｃｕ、 Ｏを薄膜を作製する。これらの薄膜の作製は
、ＲＦ−マグネトロンバッタリング法による。薄膜のＸ
線回折パターンにより、５ｒＴｉＯ。Next, on this 5rTiOs thin film, as an example of a ferroelectric material, B
aTi0. Y B am as an example of thin films and superconductors
Create a thin film of Cu and O. These thin films are manufactured by the RF-magnetron battering method. Thin film X
5rTiO according to the line diffraction pattern.
の配向性とＳｒＴｉＯ３上のＢａＴｉ０．あるいはＹＢ
ａよＣｕ、Ｏ，の配向性の関係をみた。orientation and BaTi0. on SrTiO3. Or YB
We looked at the relationship between the orientations of a, Cu, and O.
ＳｒＴｉＯ３およびＢａＴｉ０おのターゲットは市販の
高純度！末試薬である。５ｒＴｉＯｓのスパッタリング
は基板温度が４５０〜７５０℃、ガス圧力が５＝６９纏
丁、の範囲で行なった＠ Ｂ ａ Ｔ、ｘ Ｏｓは、基
板温度が５００℃、ガス圧力が４０！Ｔでスーパ、ツタ
リングした：ＹＢａｔＣｕ、Ｏ，のターゲットは、原料
のｙ、ｏｓ。SrTiO3 and BaTi0 targets are commercially available with high purity! It is a final reagent. Sputtering of 5rTiOs was carried out at a substrate temperature of 450 to 750°C and a gas pressure of 5=69cm. Super Tsuttering with T: YBatCu, O, target is raw material y, os.
ＢａＣＯ５，ＣｕＯを所定量、混合１１、粉砕し、９０
０℃した＊ ＹＢａｓＣｕ、、Ｏ，の基板温度が６００
℃、ガス圧力が１６０ｍＴ ”Ｑ行なった。その他共通
のスパッタリ混合比がＡｒ１０．＝９０／１０．時−間
は６時間、ターゲット基板の距離は８３である。ターゲ
ット粉末は銅皿に入れ、２００ｋｇ／ｃｄの圧力でプレ
スした。Predetermined amounts of BaCO5 and CuO were mixed at 11, pulverized at 90
The substrate temperature of YBasCu,,O, was 0℃*600℃
℃, gas pressure was 160mT''Q.Other common sputtering mixing ratio was Ar10.=90/10.Time was 6 hours, and distance of target substrate was 83cm.Target powder was placed in a copper pan and weighed 200kg. It was pressed at a pressure of /cd.
ＳｒＴｉＯ３はペロブスカイト型の低温強誘電体で、室
温では立方晶で常誘電体である。SrTiO3 is a perovskite-type low-temperature ferroelectric material, which is cubic and paraelectric at room temperature.
ハ
Ｓ ｒ Ｔ ｉ Ｏｓの［１００］軸の配向率α１をＩ
（２００）／（Ｉ（２００） ＋ Ｉ （１０１）
＋ Ｉ （１１１））と定義する。ＩはＸ線反射強度で
ある。Ｉ （１００）は非常に小さいので１（２００）
で比較した。特定の方向に配向していない、１
粉末の場合は、α、＝０．２８となる。完全に（１００
）すなわち（２００）方向に配向しているならα１＝１
となる。第１−１表および第１−２表に種々のスパッタ
リング条件で作製（た溶融石英上の５ｒＴｉＯ。The orientation rate α1 of the [100] axis of S r T i Os is I
(200)/(I(200) + I(101)
+ I (111)). I is the X-ray reflection intensity. I (100) is very small, so 1 (200)
compared with. In the case of 1 powder that is not oriented in a specific direction, α=0.28. Completely (100
), that is, if it is oriented in the (200) direction, α1=1
becomes. Tables 1-1 and 1-2 show 5rTiO on fused silica prepared under various sputtering conditions.
の、配向率α、を示す、第２−１表、第２−２表、にＳ
ｉ上での同様の結果を示す、基板温度およびガス圧力が
高すぎるか低すぎると配向率α、は大きくならず、最大
で０．５５である。適当なスパッタリング条件、すなわ
ち基板温度が６００〜７００℃で、ガス圧力が１０〜６
０１Ｔの範囲で作製すると、α１はかなり大きくなり最
大−７０，８６１達する。このように。Tables 2-1 and 2-2 show the orientation ratio α of S
Showing similar results on i, when the substrate temperature and gas pressure are too high or too low, the orientation ratio α, does not become large and is at most 0.55. Appropriate sputtering conditions, i.e. substrate temperature 600-700℃, gas pressure 10-6
When fabricated in the range of 01T, α1 becomes considerably large and reaches a maximum of -70,861. in this way.
スパッタリング条件を最適にすると１石英やＳｉ上に作
製したＳ ｒ Ｔ ｉ Ｏ３薄膜の［１００］軸を基板
に垂直に強度に配向させることができる。By optimizing the sputtering conditions, the [100] axis of the S r T i O thin film produced on quartz or Si can be strongly oriented perpendicular to the substrate.
第１−１表
石英上の５ｒＴｉ○３の配向率〔１〕
第２−１表 Ｓｉ上のＳｒＴｉＯ３の配向率〔１〕第１
−２表
石英上のＳ ｒ Ｔ ｉ Ｏ３の配向率〔２〕第２−２
表 Ｓｉ上の５ｒＴｉ○３の配向率〔２〕次に種々の（
１００）配向率α、をもつＳ ｒ Ｔ ｉ Ｏ，上に、
ＢａＴｉ０ａ、ＹＢａ２Ｃｕ、０７薄膜を作製し、それ
らの（００１）配向率とα、との関係を調べた。Table 1-1 Orientation rate of 5rTi○3 on quartz [1] Table 2-1 Orientation rate of SrTiO3 on Si [1] 1st
-2 Table Orientation rate of S r Ti O3 on quartz [2] No. 2-2
Table Orientation rate of 5rTi○3 on Si [2] Next, various (
100) On S r T i O, with orientation rate α,
BaTi0a, YBa2Cu, and 07 thin films were prepared, and the relationship between their (001) orientation ratio and α was investigated.
ＢａＴｉ○、は１２０℃付近にキュリー点をもつペロブ
スカイト型の強誘電体である。室温では正方晶形で１強
誘電分極の向きはＣ軸すなわち（００１）方向である。BaTi○ is a perovskite-type ferroelectric material having a Curie point around 120°C. At room temperature, it has a tetragonal crystal shape, and the direction of one ferroelectric polarization is the C axis, that is, the (001) direction.
これを焦電形赤外線センサ、圧電素子、メモリー等に用
いる場合、（００１）軸が基板に垂直に配向しているこ
とが望ましい。Ｂ ａ Ｔ ｉ○、粉末のＸ線回折パタ
ーンを標準として測定し、薄膜の結果と比較した。ここ
でＢ ａ Ｔ ｉ Ｏ、薄膜の（００１）軸が配向して
いる度合を表わすために配向率α２を［Ｉ （００１）
）／ＣＩ （００１） ＋ （１００） ＋ Ｉ （１
０１） ＋ Ｉ （１１０）＋ Ｉ （１１１））で定
義する。もしも薄膜が全く配向していなくて粉末と同じ
状態ならば、α、：０．０４６になる。完全に（００１
）軸が基板に垂直に配向しているならばα２は１になる
。溶融石英、Ｓｉ基板上に作製した種々の（１００）配
向率α１をもつＳ ｒ Ｔ ｉ Ｏ。When using this for pyroelectric infrared sensors, piezoelectric elements, memories, etc., it is desirable that the (001) axis is oriented perpendicular to the substrate. The X-ray diffraction pattern of the powder was measured as a standard and compared with the results of the thin film. Here, B a T i O, in order to express the degree of orientation of the (001) axis of the thin film, the orientation rate α2 is expressed as [I (001)
)/CI (001) + (100) + I (1
01) + I (110) + I (111)). If the thin film is not oriented at all and is in the same state as the powder, α, :0.046. Completely (001
) axis is oriented perpendicular to the substrate, then α2 becomes 1. S r Ti O with various (100) orientation ratios α1 fabricated on fused silica and Si substrates.
上にＢ ａ Ｔ ｉ Ｏ３薄膜を作製し、Ｘ線回折パタ
ーンからその（００１）配向率α２を求めた。第３表に
基板上の５ｒＴｉ○、のα１とＢ ａ Ｔ ｘ Ｏ３の
α２を示す、直接ＢａＴｉ０．を溶融石英、Ｓｉ基板上
に作製したときのα２は０．１５〜０．５０の範囲であ
った。第３表から（１００）に優勢に配向したＳ ｒ
Ｔ ｉ Ｏ、上に作製するとα２は非常に大きくなるこ
とがわかる。A B a T i O3 thin film was produced on top, and its (001) orientation rate α2 was determined from the X-ray diffraction pattern. Table 3 shows α1 of 5rTi○ on the substrate and α2 of B a T x O3, direct BaTi0. When fabricated on a fused silica or Si substrate, α2 was in the range of 0.15 to 0.50. From Table 3, Sr with predominantly (100) orientation
It can be seen that α2 becomes very large when fabricated on T i O.
第３表 ＳｒＴｉＯ３の配向率α１とＢａＴｉＯ３の配
向率〔α２〕
ＹＢａ、Ｃｕ、Ｏ，はペロブスカイト型の超伝導体で約
９００°にの臨界温度をもつ、結晶対称性は斜方晶であ
る。電流が流れ易く臨界電流密度が大きいのは［０１０
３および［１００］方向である。これをデバイスとして
応用する場合、［００１１軸が基板に垂直に配向してい
ることが望ましい＠ ＹＢａ、Ｃｕ、Ｏ，粉末のＸ線回
折パターンを標準として測定し、薄膜の結果と比較する
。粉末の場合、（００２）反射の２０は１５．３＠にあ
り、（１１０）反射は３２．８°にある。Table 3 Orientation rate α1 of SrTiO3 and Orientation rate [α2] of BaTiO3 YBa, Cu, and O are perovskite-type superconductors with a critical temperature of about 900° and have orthorhombic crystal symmetry. The current flows easily and the critical current density is large in [010
3 and the [100] direction. When applying this as a device, it is desirable that the [0011 axis is oriented perpendicular to the substrate.@YBa, Cu, O, The X-ray diffraction pattern of the powder is measured as a standard and compared with the results of the thin film. For powder, 20 of the (002) reflection is at 15.3@ and the (110) reflection is at 32.8°.
その強度比は約９ ： １００であった。 ［００１］
方向が基板に垂直に配向している度合いを表わすために
配向率α、をＩ （００２）バＩ （００２） ＋ Ｉ
（１１０））で定義した。α、は、粉体のときは０．
０８となり、Ｉ（１１０）がゼロで１となる。したがっ
て、薄膜の［００２３軸が基板に対して垂直に優勢に配
向しているならば、α、は０．０８より大きくなるはず
である。完全に（００１）方向に配向しているならば、
この値は１になる。溶融石英、Ｓｉ基板上に作製した種
々の（１００）配向率α、をもつＳ ｒ Ｔ ｉ Ｏａ
上にＹＢａ、Ｃｕ。The intensity ratio was approximately 9:100. [001]
To express the degree to which the direction is perpendicular to the substrate, the orientation rate α is I (002) + I (002) + I
(110)). α is 0 when it is a powder.
08, and I(110) is zero and becomes 1. Therefore, if the [0023 axis of the thin film is predominantly oriented perpendicular to the substrate, α, should be greater than 0.08. If it is completely oriented in the (001) direction,
This value will be 1. S r Ti Oa with various (100) orientation rates α fabricated on fused silica and Si substrates
YBa and Cu on top.
０７薄膜を作製し、Ｘ線回折パターンからその（００１
）配向率α、を求めた。第４表に基板上のＳ ｒ Ｔ
ｉ Ｏ、のα１とＹＢａ、Ｃｕ、Ｏ，のα３を示す、直
接ＹＢａ、Ｃｕ、Ｏ，を溶融石英、Ｓｉ基板上に作製し
たときのα１は０．３０〜０．５０の範囲であった。第
４表から（１００）に優勢に配向したＳｒＴｉＯ３上に
作製するとα３は非常に大きくなることがわかる。07 thin film was prepared, and its (001
) The orientation rate α was determined. Table 4 shows S r T on the substrate.
α1 of iO, and α3 of YBa, Cu, O. When YBa, Cu, O, were directly produced on fused silica and Si substrates, α1 was in the range of 0.30 to 0.50. . From Table 4, it can be seen that α3 becomes extremely large when fabricated on SrTiO3 with predominantly (100) orientation.
第４表 ＳｒＴｉＯ３の配向率α、とＹＢａ、Ｃｕ、Ｏ
，の配向率α。Table 4 Orientation rate α of SrTiO3 and YBa, Cu, O
, the orientation rate α.
（発明の効果）
本発明によれば、石英あるいはＳｉ基板上に（１０Ｇ）
軸が基板に垂直に配向したＳｒＴｉＯ３を作製したもの
を基板に用いることによって、基板に垂直に強誘電分極
軸が向いたＢａＴｉ０．のような強誘電体薄膜および基
板に平行に電流が流れ易く臨界電流密度が大きいＹＢａ
、Ｃｕ、Ｏ，のような超伝導薄膜を容易に作製すること
ができ、その実用上の効果は大である。(Effects of the Invention) According to the present invention, (10G) is deposited on a quartz or Si substrate.
By using a fabricated SrTiO3 whose axis is oriented perpendicular to the substrate as the substrate, BaTi0. YBa has a high critical current density and allows current to easily flow parallel to the ferroelectric thin film and substrate.
, Cu, O, etc. can be easily produced, and its practical effects are great.
特許出願人 松下電器産業株式会社Patent applicant: Matsushita Electric Industrial Co., Ltd.
Claims (2)
れた基板に垂直に〔１００〕軸が配向したＳｒＴｉＯ＿
３（チタン酸ストロンチウム）薄膜を有することを特徴
とする薄膜基板。(1) SrTiO_ with the [100] axis oriented perpendicular to the substrate formed on quartz (SiO_2) or Si substrate
3. A thin film substrate comprising a strontium titanate thin film.
温度が６００〜７００℃、ガス圧力が１０〜６０ｍＴで
、スパッタリング法により、ＳｒＴｉＯ＿３薄膜を形成
させることにより、基板面に垂直に〔１００〕軸が配向
したＳｒＴｉＯ＿３を有することを特徴とする薄膜基板
の製造方法。(2) By forming a SrTiO_3 thin film on a quartz (SiO_2) or Si substrate by sputtering at a substrate temperature of 600 to 700°C and a gas pressure of 10 to 60 mT, the [100] axis is perpendicular to the substrate surface. A method for manufacturing a thin film substrate, characterized in that it has SrTiO_3 oriented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2103033A JP2990527B2 (en) | 1990-04-20 | 1990-04-20 | Manufacturing method of thin film substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2103033A JP2990527B2 (en) | 1990-04-20 | 1990-04-20 | Manufacturing method of thin film substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH042698A true JPH042698A (en) | 1992-01-07 |
| JP2990527B2 JP2990527B2 (en) | 1999-12-13 |
Family
ID=14343349
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2103033A Expired - Fee Related JP2990527B2 (en) | 1990-04-20 | 1990-04-20 | Manufacturing method of thin film substrate |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103469156A (en) * | 2013-09-18 | 2013-12-25 | 东华大学 | Method for carrying out stressing engineering on thicker ferroelectric film for material modification |
| CN103680940A (en) * | 2013-09-18 | 2014-03-26 | 东华大学 | A method for improving anti-fatigue properties of a ferroelectric thin film with conductive oxides as bottom electrodes |
-
1990
- 1990-04-20 JP JP2103033A patent/JP2990527B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103469156A (en) * | 2013-09-18 | 2013-12-25 | 东华大学 | Method for carrying out stressing engineering on thicker ferroelectric film for material modification |
| CN103680940A (en) * | 2013-09-18 | 2014-03-26 | 东华大学 | A method for improving anti-fatigue properties of a ferroelectric thin film with conductive oxides as bottom electrodes |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2990527B2 (en) | 1999-12-13 |
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