JPH04269801A - Material for forming resistor film - Google Patents
Material for forming resistor filmInfo
- Publication number
- JPH04269801A JPH04269801A JP3053415A JP5341591A JPH04269801A JP H04269801 A JPH04269801 A JP H04269801A JP 3053415 A JP3053415 A JP 3053415A JP 5341591 A JP5341591 A JP 5341591A JP H04269801 A JPH04269801 A JP H04269801A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- thin film
- alloy
- resistive
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 26
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 7
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 239000010409 thin film Substances 0.000 abstract description 23
- 239000010408 film Substances 0.000 abstract description 16
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 229910000521 B alloy Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、例えばスパッタリン
グ、真空蒸着等によって抵抗体薄膜を作成する場合にタ
ーゲット、蒸発材料等として用いられる抵抗膜作成用材
料に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material for forming a resistive film, which is used as a target, an evaporation material, etc. when forming a resistive thin film by sputtering, vacuum evaporation, or the like.
【０００２】0002
【従来の技術】例えば電子機器に用いられる薄膜抵抗器
等には、従来は主としてニクロム合金系または窒化タン
タル系の抵抗材料が用いられているが、これらは比抵抗
が高くないため、比較的高い抵抗値を要求される電子回
路には、このような抵抗材料を用いた薄膜抵抗器や薄膜
抵抗体を使用することは困難であった。[Prior Art] Conventionally, nichrome alloy-based or tantalum nitride-based resistance materials have been mainly used for thin film resistors used in electronic devices, for example, but since these do not have high specific resistance, they are relatively expensive. It has been difficult to use thin film resistors and thin film resistors using such resistance materials in electronic circuits that require a high resistance value.
【０００３】しかし近年は、電子機器の小型化に伴い電
子部品の小型化が強く要求されるに従い、小型で高い抵
抗値の薄膜抵抗器や薄膜抵抗体の要求はますます強くな
っている。特に、チップ抵抗器、サーマルプリントヘッ
ド、配線基板内に薄膜抵抗体を内蔵させた抵抗体内蔵型
配線基板等では、これは切実な問題である。However, in recent years, as electronic devices have become smaller, there has been a strong demand for smaller electronic components, and the demand for smaller, higher resistance thin film resistors and thin film resistors has become stronger. In particular, this is a serious problem in chip resistors, thermal print heads, wiring boards with built-in resistors in which thin film resistors are built into the wiring boards, and the like.
【０００４】0004
【発明が解決しようとする課題】このような問題を解決
するものとして、クロム中にアルミニウムを所定量含有
させたＣｒ−Ａｌ合金やそれにホウ素を添加したＣｒ−
Ａｌ−Ｂ合金が本出願人他によって先に提案されている
が（前者は特開昭６２−７７４３６号公報参照、後者は
特開昭６２−１６５３０２号公報参照）、これらの材料
をターゲットや蒸発材料として用いてスパッタリングや
真空蒸着によって抵抗体薄膜を作成したところ、抵抗値
の再現性に問題がある（即ち同様の条件下で抵抗体薄膜
を作成してもその抵抗値のばらつきが大きい）ことが分
かった。[Problems to be Solved by the Invention] In order to solve these problems, a Cr-Al alloy in which a predetermined amount of aluminum is contained in chromium, and a Cr-Al alloy in which boron is added to the chromium alloy are available.
Al-B alloys have been previously proposed by the present applicant and others (for the former, see JP-A-62-77436, for the latter, see JP-A-62-165302), but these materials cannot be used as targets or evaporators. When resistor thin films were created using sputtering or vacuum evaporation as a material, there was a problem with the reproducibility of the resistance value (i.e., even if the resistor thin films were created under similar conditions, the resistance values varied widely). I understand.
【０００５】そこでこの発明は、比抵抗の高い抵抗体薄
膜を再現性良く作成することができる抵抗膜作成用材料
を提供することを主たる目的とする。[0005] Therefore, the main object of the present invention is to provide a material for forming a resistive film that can form a resistive thin film with high specific resistance with good reproducibility.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
、この発明に係る第１の抵抗膜作成用材料は、クロム中
のアルミニウム含有量が２〜５０重量％のＣｒ−Ａｌ合
金に、金属酸化物を混合して成ることを特徴とする。[Means for Solving the Problems] In order to achieve the above object, the first material for forming a resistive film according to the present invention is a Cr-Al alloy having an aluminum content of 2 to 50% by weight in chromium. It is characterized by being made of a mixture of oxides.
【０００７】また、この発明に係る第２の抵抗膜作成用
材料は、クロム中のアルミニウム含有量が２〜５０重量
％のＣｒ−Ａｌ合金に、酸化する金属であって酸化して
いないものを混合して成ることを特徴とする。[0007] The second material for forming a resistive film according to the present invention is a Cr-Al alloy having an aluminum content of 2 to 50% by weight in chromium, and a metal that is oxidized but not oxidized. It is characterized by being made of a mixture.
【０００８】[0008]
【作用】前述したＣｒ−Ａｌ合金あるいはＣｒ−Ａｌ−
Ｂ合金を用いた場合に抵抗体薄膜の抵抗値の再現性がな
ぜ乏しいのかという点を重点に検討した結果、抵抗体薄
膜中の酸素分が抵抗値に大きい影響を持っており、この
酸素の量が一定になるようにコントロールすることによ
って、抵抗値の再現性を良くすることができることを見
出した。それに基づいて開発したのが上記第１および第
２の抵抗膜作成用材料である。[Function] The above-mentioned Cr-Al alloy or Cr-Al-
As a result of focusing on why the reproducibility of the resistance value of the resistor thin film is poor when using B alloy, we found that the oxygen content in the resistor thin film has a large effect on the resistance value. It has been found that by controlling the amount to be constant, it is possible to improve the reproducibility of the resistance value. Based on this, the first and second materials for forming a resistive film were developed.
【０００９】上記第１の抵抗膜作成用材料をターゲット
や蒸発材料として用いてスパッタリングや真空蒸着等で
抵抗体薄膜を作成する場合は、雰囲気の真空度を良くし
て（その後必要に応じて不活性ガスを導入しても良い）
、雰囲気中に酸素が残存しないようにしておく。このよ
うな状態で抵抗体薄膜を作成すると、当該抵抗膜作成用
材料中に混合している金属酸化物の比率によって抵抗体
薄膜中の酸素の量が決まるので、抵抗値の再現性が良く
なる。また、第２の抵抗膜作成用材料を用いる場合に比
べて、単に雰囲気の真空度を良くすれば良いので、容易
に再現性良く抵抗体薄膜を作成することができる。When forming a resistor thin film by sputtering, vacuum evaporation, etc. using the above-mentioned first resistive film forming material as a target or evaporation material, the degree of vacuum in the atmosphere is improved (afterwards, if necessary, (Active gas may be introduced)
Make sure that no oxygen remains in the atmosphere. When a resistor thin film is created under these conditions, the amount of oxygen in the resistor thin film is determined by the ratio of metal oxides mixed in the material for creating the resistor film, which improves the reproducibility of the resistance value. . Furthermore, compared to the case where the second resistive film forming material is used, it is sufficient to simply improve the degree of vacuum in the atmosphere, so that a resistive thin film can be easily formed with good reproducibility.
【００１０】一方、上記第２の抵抗膜作成用材料をター
ゲットや蒸発材料として用いてスパッタリングや真空蒸
着等で抵抗体薄膜を作成する場合は、雰囲気中の酸素濃
度を一定にコントロールすれば良い。このような状態で
抵抗体薄膜を作成すると、当該抵抗膜作成用材料中に混
合している金属が酸化して金属酸化物となって薄膜中に
含まれるようになり、この金属酸化物の割合によって薄
膜中の酸素の量が決まるので、抵抗値の再現性が良くな
る。On the other hand, when forming a resistor thin film by sputtering, vacuum evaporation, or the like using the second material for forming a resistive film as a target or evaporation material, the oxygen concentration in the atmosphere may be controlled to be constant. When a resistor thin film is created in such a state, the metal mixed in the material for creating the resistive film oxidizes and becomes a metal oxide that is contained in the thin film, and the proportion of this metal oxide increases. Since the amount of oxygen in the thin film is determined by the amount of oxygen in the thin film, the reproducibility of the resistance value is improved.
【００１１】上記第１の抵抗膜作成用材料における金属
酸化物を構成する金属、あるいは上記第２の抵抗膜作成
用材料における酸化前の金属は、例えばホウ素、マグネ
シウム、マンガン、チタン、シリコン等が良い。[0011]The metal constituting the metal oxide in the first material for forming a resistive film or the metal before oxidation in the second material for forming a resistive film is, for example, boron, magnesium, manganese, titanium, silicon, etc. good.
【００１２】また、上記第１および第２の抵抗膜作成用
材料におけるＣｒ−Ａｌ合金のアルミニウム含有量が２
〜５０重量％が好ましいのは、前述した二つの特許公報
にも記載されているように、その範囲であれば、従来の
ニクロム合金よりも高い比抵抗が得られ、また温度特性
や安定性等も良いからである。[0012] Furthermore, the aluminum content of the Cr-Al alloy in the first and second resistive film forming materials is 2.
~50% by weight is preferable because, as stated in the two patent publications mentioned above, within that range, a higher specific resistance than conventional nichrome alloys can be obtained, and temperature characteristics, stability, etc. Because it is also good.
【００１３】[0013]
【発明の効果】以上のようにこの発明に係る抵抗膜作成
用材料を用いれば、比抵抗の高い抵抗体薄膜を再現性良
く作成することができる。As described above, by using the material for forming a resistive film according to the present invention, a resistive thin film having a high specific resistance can be formed with good reproducibility.
Claims (2)
５０重量％のＣｒ−Ａｌ合金に、金属酸化物を混合して
成ることを特徴とする抵抗膜作成用材料。[Claim 1] Aluminum content in chromium is 2 to 2.
A material for forming a resistive film, characterized in that it is made of a 50% by weight Cr-Al alloy mixed with a metal oxide.
５０重量％のＣｒ−Ａｌ合金に、酸化する金属であって
酸化していないものを混合して成ることを特徴とする抵
抗膜作成用材料。[Claim 2] Aluminum content in chromium is 2 to 2.
A material for forming a resistive film, characterized in that it is made by mixing 50% by weight of a Cr-Al alloy with an oxidizable metal that is not oxidized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3053415A JPH04269801A (en) | 1991-02-25 | 1991-02-25 | Material for forming resistor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3053415A JPH04269801A (en) | 1991-02-25 | 1991-02-25 | Material for forming resistor film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04269801A true JPH04269801A (en) | 1992-09-25 |
Family
ID=12942207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3053415A Pending JPH04269801A (en) | 1991-02-25 | 1991-02-25 | Material for forming resistor film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04269801A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017528902A (en) * | 2014-05-27 | 2017-09-28 | オーボテック リミテッド | 3D structure printing by laser-induced forward transfer |
| US10629442B2 (en) | 2013-10-14 | 2020-04-21 | Orbotech Ltd. | Lift printing of multi-composition material structures |
| US10633758B2 (en) | 2015-01-19 | 2020-04-28 | Orbotech Ltd. | Printing of three-dimensional metal structures with a sacrificial support |
| US10688692B2 (en) | 2015-11-22 | 2020-06-23 | Orbotech Ltd. | Control of surface properties of printed three-dimensional structures |
| US11271119B2 (en) | 2014-10-19 | 2022-03-08 | Orbotech Ltd. | LIFT printing of conductive traces onto a semiconductor substrate |
| US11881466B2 (en) | 2017-05-24 | 2024-01-23 | Orbotech Ltd. | Electrical interconnection of circuit elements on a substrate without prior patterning |
-
1991
- 1991-02-25 JP JP3053415A patent/JPH04269801A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10629442B2 (en) | 2013-10-14 | 2020-04-21 | Orbotech Ltd. | Lift printing of multi-composition material structures |
| JP2017528902A (en) * | 2014-05-27 | 2017-09-28 | オーボテック リミテッド | 3D structure printing by laser-induced forward transfer |
| US11271119B2 (en) | 2014-10-19 | 2022-03-08 | Orbotech Ltd. | LIFT printing of conductive traces onto a semiconductor substrate |
| US10633758B2 (en) | 2015-01-19 | 2020-04-28 | Orbotech Ltd. | Printing of three-dimensional metal structures with a sacrificial support |
| US10688692B2 (en) | 2015-11-22 | 2020-06-23 | Orbotech Ltd. | Control of surface properties of printed three-dimensional structures |
| US11881466B2 (en) | 2017-05-24 | 2024-01-23 | Orbotech Ltd. | Electrical interconnection of circuit elements on a substrate without prior patterning |
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