JPH04263459A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH04263459A JPH04263459A JP3045811A JP4581191A JPH04263459A JP H04263459 A JPH04263459 A JP H04263459A JP 3045811 A JP3045811 A JP 3045811A JP 4581191 A JP4581191 A JP 4581191A JP H04263459 A JPH04263459 A JP H04263459A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- resin
- leads
- bending
- shaping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 229920005989 resin Polymers 0.000 claims abstract description 37
- 239000011347 resin Substances 0.000 claims abstract description 37
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 238000000465 moulding Methods 0.000 claims abstract description 12
- 238000007493 shaping process Methods 0.000 claims description 23
- 238000005452 bending Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 abstract description 14
- 238000010586 diagram Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は，半導体装置の製造方法
，特に，半導体チップの外装に関する。半導体チップを
リードフレーム或いはセラミックパッケージに搭載し，
その後，金線等で配線し，モールド樹脂或いはセラミッ
ク等で封止し，リード成形，切断等の工程を経て半導体
デバイス（以下ＩＣと呼称）が形成される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor chip. A semiconductor chip is mounted on a lead frame or ceramic package,
Thereafter, wiring is performed using gold wires, etc., and the semiconductor device (hereinafter referred to as IC) is formed through processes such as lead molding, cutting, etc., and sealing with mold resin or ceramics.
【０００２】この工程の中で，リード整形切断を行う工
程があるが，最近のＩＣはＳＭＤ（Ｓｕｒｆａｃｅ Ｍ
ｏｕｎｔ Ｄｅｖｉｃｅ）対応のものが多くなり， リ
ードの整形も図４に示すようなＳＯＰ（Ｓｍａｌｌ Ｏ
ｕｔｌｉｎｅ Ｐａｃｋａｇｅ）， ＱＦＰ（Ｑｕａ
ｄ Ｆｌａｔ Ｐａｃｋａｇｅ） タイプがあり， リ
ードはフラット型に整形されている。[0002] In this process, there is a step of cutting the leads for shaping, but recent ICs are SMD (Surface M).
As more and more devices are compatible with small O
utline Package), QFP (Qua
dFlat Package) type, and the lead is shaped into a flat type.
【０００３】ところが，これらのＩＣをプリント基板へ
表面実装する際に，ＩＣのリード平坦度が均一でないと
プリント基板のパターンとＩＣのリードとの間に隙間が
できるため，はんだ付けができない状態になってしまう
。However, when surface mounting these ICs onto a printed circuit board, if the flatness of the IC leads is not uniform, a gap will be created between the printed circuit board pattern and the IC leads, making soldering impossible. turn into.
【０００４】そのため，ＩＣのリード平坦度が均一でば
らつきの少ないものが要求されている。[0004] Therefore, there is a demand for IC leads with uniform lead flatness and little variation.
【０００５】[0005]
【従来の技術】図４は従来例の説明図である。図におい
て，１０はリード，１１はモールド樹脂である。2. Description of the Related Art FIG. 4 is an explanatory diagram of a conventional example. In the figure, 10 is a lead and 11 is a molding resin.
【０００６】従来のＩＣのリード１０の形状は，図４（
ａ）にＳＯＰ，図４（ｂ）にＱＦＰの外観図で示すよう
に，モールド樹脂１１で封止後，リード１０の整形切断
が行われているが，整形後はＩＣの電気的特性試験の際
，接続ソケットにてリード１０と接触させることにより
，時々リード１０の曲がりや浮き等の障害が発生してい
た。また，ハンドリング時にも，梱包形態の不備等によ
り同様にリード１０の曲がり，浮き等の障害が発生する
。The shape of the lead 10 of a conventional IC is shown in FIG.
As shown in the external view of the SOP in a) and the QFP in Figure 4(b), the leads 10 are cut for shaping after being sealed with mold resin 11. In this case, when the lead 10 is brought into contact with the connection socket, problems such as bending or floating of the lead 10 sometimes occur. Furthermore, during handling, problems such as bending and lifting of the lead 10 may occur due to improper packaging.
【０００７】また，最近のＩＣはパッケージの大きさ・
厚みが小さくなって来ている反面，半導体チップが大型
化されて来ているため，モールド樹脂１２で封止後，封
止面からチップまでの外気との距離が短くなり，半導体
素子に対する耐湿性保護が難しく，且つ，問題となって
いる。[0007]Moreover, recent ICs have different package sizes and
While the thickness is becoming smaller, semiconductor chips are also becoming larger, so after being sealed with the molding resin 12, the distance from the sealing surface to the outside air is becoming shorter, and the moisture resistance of the semiconductor element is becoming smaller. Protection is difficult and problematic.
【０００８】[0008]
【発明が解決しようとする課題】上述のように，従来の
ＩＣのリード形状では，リード厚み ０．１５ｍｍ，幅
０．２ｍｍに対して， 長さが３ｍｍも有り， リー
ド先端へ数十グラム程度の荷重を加えるだけでリードが
変形してしまい，取り扱いが非常に困難であった。[Problems to be Solved by the Invention] As mentioned above, in the conventional IC lead shape, the lead thickness is 0.15 mm and the width is 0.2 mm, but the length is 3 mm, and the lead tip weighs about several tens of grams. The reeds deformed just by applying a load of 100 mL, making them extremely difficult to handle.
【０００９】また，半導体素子に対する耐湿改善につい
ても，その対策が要求されている。本発明は上記の問題
点を鑑み，リード曲がりを防止し，併せて，耐湿改善を
行う方法を提供することを目的とする。[0009] Furthermore, measures are required to improve the moisture resistance of semiconductor devices. In view of the above problems, it is an object of the present invention to provide a method for preventing lead bending and improving moisture resistance.
【００１０】0010
【課題を解決するための手段】図１は本発明の原理説明
図であり，左側に各工程順の断面図，一部右側に斜視外
観図で示す。[Means for Solving the Problems] Fig. 1 is an explanatory diagram of the principle of the present invention, with a sectional view showing the order of each step on the left side and a perspective external view partially shown on the right side.
【００１１】図において，１はリードフレーム，２はダ
イステージ， ３はチップ， ４はリード，５は第一の
モールド樹脂，６はリード曲げ整形部，７は第二のモー
ルド樹脂である。In the figure, 1 is a lead frame, 2 is a die stage, 3 is a chip, 4 is a lead, 5 is a first mold resin, 6 is a lead bending section, and 7 is a second mold resin.
【００１２】従来のＩＣパッケージの外観は前述の図４
のようになっており，樹脂封止後リードをＳＭＤ実装用
に整形していた。本発明では従来のＩＣのように樹脂封
止後，一旦リードを整形し，更に樹脂でリード曲げ整形
部を封止することによりリードを固定することができる
。The appearance of a conventional IC package is shown in FIG.
After resin sealing, the leads were shaped for SMD mounting. In the present invention, the leads can be fixed by shaping the leads once after resin sealing as in conventional ICs, and then sealing the lead bending and shaping portion with resin.
【００１３】よって，リード先端へ荷重を加えても変形
しにくいものとなり，且つ，リードの平坦度が均一であ
るため，プリント基板等への実装時にもリードとの半田
付けが容易となり実装工程での不良率が改善される。[0013] Therefore, even if a load is applied to the lead tip, it will not easily deform, and since the flatness of the lead is uniform, it will be easy to solder to the lead when mounting it on a printed circuit board, etc., and the mounting process will be easy. The defective rate will be improved.
【００１４】即ち，本発明の目的は，図１（ａ）に示す
ように，リードフレーム１のダイステージ２にダイス付
けされたチップ３を，図１（ｂ）に示すように，樹脂封
止する第一のモールド樹脂封止工程と，図１（ｃ）に示
すように，リード４をリード曲げ整形してリード曲げ整
形部６を形成する工程と，図１（ｄ）に示すように，
該リード曲げ整形部６を樹脂封止する第二のモールド
樹脂封止工程とを含むことにより達成される。That is, an object of the present invention is to seal a chip 3 diced on a die stage 2 of a lead frame 1 with resin as shown in FIG. 1(b), as shown in FIG. 1(a). As shown in FIG. 1(c), a step of bending and shaping the lead 4 to form a lead bending shaping portion 6, as shown in FIG. 1(d),
This is achieved by including a second mold resin sealing step of sealing the lead bending and shaping portion 6 with resin.
【００１５】[0015]
【作用】図１に示すように，従来のＩＣと同様にチップ
付けされたリードフレームを，一旦モールド樹脂で封止
し，その後リードを整形する。更に，リード曲げ整形部
を樹脂で封止してリード先端部のみパッケージより出し
ておくことで，外部との電気的な接続が可能となる。[Operation] As shown in FIG. 1, a lead frame with a chip attached thereto is once sealed with a molding resin, and then the leads are shaped. Furthermore, by sealing the lead bending section with resin and leaving only the lead tip portion exposed from the package, electrical connection with the outside is possible.
【００１６】また，パッケージよりリード先端部が約
０．５ｍｍ〜１．５ｍｍ とごく僅かしか出ていないた
め， 外部からの外力に対しても強く， リード変形を
防ぐことが可能となる。[0016] Also, the tip of the lead is approximately smaller than the package.
Since the protrusion is very small (0.5mm to 1.5mm), it is strong against external forces and can prevent lead deformation.
【００１７】また， 二重に樹脂封止を施すことにより
半導体素子への耐湿性が改善される。[0017] Further, by performing double resin sealing, the moisture resistance of the semiconductor element is improved.
【００１８】[0018]
【実施例】図２，図３は本発明の一実施例の説明図であ
る。図において，１はリードフレーム，２はダイステー
ジ， ３はチップ， ４はリード，５は第一のモールド
樹脂，６はリード曲げ整形部，７は第二のモールド樹脂
，８は稲妻形状パターン，９はダムバーである。Embodiment FIGS. 2 and 3 are explanatory diagrams of an embodiment of the present invention. In the figure, 1 is a lead frame, 2 is a die stage, 3 is a chip, 4 is a lead, 5 is a first mold resin, 6 is a lead bending section, 7 is a second mold resin, 8 is a lightning bolt shape pattern, 9 is a dumb bar.
【００１９】図１，２，３により本発明の一実施例につ
いて説明する。図１（ａ）のように，チップ３がダイス
付けされたリードフレーム１を １５０〜１８０ ℃程
度に加熱されたトランスファモールド金型へ装着し，
数十屯〜数百屯もの圧力で金型をクランプした後， 熱
硬化型のエポキシ系樹脂でトランスファ成型し， 図１
（ｂ）のような第一のモールド樹脂５の形状となる。An embodiment of the present invention will be explained with reference to FIGS. 1, 2, and 3. As shown in Fig. 1(a), the lead frame 1 with the chip 3 diced thereon is attached to a transfer mold die heated to about 150 to 180°C.
After clamping the mold with a pressure of several tens to hundreds of tons, transfer molding is performed using thermosetting epoxy resin, and the mold is formed as shown in Figure 1.
The shape of the first mold resin 5 is as shown in (b).
【００２０】次に，図１（ｃ）に示すように，リードフ
レームに連なった状態で，リード曲げ整形部６の形状の
様に曲げ整形を行い，図１（ｄ）に示すように，第二の
モールド樹脂成型工程に移る。Next, as shown in FIG. 1(c), the lead is bent to the shape of the lead bending shaping section 6 while connected to the lead frame, and as shown in FIG. 1(d), Move on to the second mold resin molding process.
【００２１】ここで，リード４をリード曲げ整形部６の
ように整形すると，従来の様なリードフレーム１では歪
みが生ずる為に，その歪みを吸収させるように隣のリー
ドフレーム１との間に，歪みを吸収するように，稲妻形
状パターン８を設けてある。Here, when the lead 4 is shaped like the lead bending shaping section 6, distortion occurs in the conventional lead frame 1, so in order to absorb the distortion, there is a gap between the lead frame 1 and the adjacent lead frame 1. , a lightning bolt-shaped pattern 8 is provided to absorb distortion.
【００２２】このリードフレーム形状の詳細については
，図２に示す。図２（ａ）はＳＯＰ，図２（ｂ）はＱＦ
Ｐに用いるリードフレームの一例であた，その一部分を
示す。Details of the shape of this lead frame are shown in FIG. Figure 2(a) is SOP, Figure 2(b) is QF
This is an example of a lead frame used for P, and a portion of it is shown below.
【００２３】何れも，第一のモールド樹脂で成形した後
の状態で，この後，リード４を整形してリード曲げ整形
部６を形成する際にリードフレームに歪みが入らぬよう
に，稲妻形状パターン８がリード４とリードフレーム１
の枠との間に設けられ，リード整形後，歪んでもこの部
分で伸縮できるため自由にリードの整形を行うことが可
能となる。In both cases, after molding with the first molding resin, the lead frame is shaped into a lightning bolt shape in order to avoid distortion in the lead frame when shaping the lead 4 to form the lead bending shaping part 6. Pattern 8 is lead 4 and lead frame 1
This part is provided between the frame and the lead, and even if the lead is distorted after shaping, this part can be expanded or contracted, making it possible to shape the lead freely.
【００２４】またリード４が変形しないようにリード４
の先端は後工程のリード４切断時までダムバー９でサポ
ートされている。次に，上述のリード曲げ整形部６を形
成した状態でもう一度トランスファモールド金型に装着
して，図１（ｄ）の様な第二のモールド樹脂整形を行う
。その際の樹脂整形条件は第一のモールド樹脂整形条件
とほぼ同じで良い。[0024] Also, in order to prevent the lead 4 from being deformed,
The tip of the lead 4 is supported by a dam bar 9 until the lead 4 is cut in a subsequent process. Next, with the above-mentioned lead bending shaping portion 6 formed, it is mounted once again in a transfer mold die, and a second mold resin shaping is performed as shown in FIG. 1(d). The resin shaping conditions at that time may be approximately the same as the first mold resin shaping conditions.
【００２５】この様にして，二重にモールド樹脂整形さ
れたＩＣを，次に，リードフレーム１から切り放しを行
う為に，図１（ｅ）に示すように，リード４の先端部に
あるダムバー９の部分を切断して，最終的なＩＣ形状が
出来上がり，第二のモールド樹脂で整形されたリード曲
げ整形部６は固定され，リード４の先端部は，外力に対
する曲げ等に強くなる。[0025] Next, in order to cut the IC, which has been double-molded with resin, from the lead frame 1, as shown in Fig. 1(e), the dam bar at the tip of the lead 4 is removed. The final IC shape is completed by cutting the portion 9, and the lead bending shaping portion 6 shaped with the second molding resin is fixed, and the tip end of the lead 4 becomes strong against bending due to external force.
【００２６】図３（ａ）はＳＯＰ，図２（ｂ）はＱＦＰ
のそれぞれの完成品の斜視図，図３（ｃ）はリード曲げ
整形部５を樹脂封止した完成品の断面図を示している。
図３の完成品の状態からみて分る様に，ＩＣパッケージ
より突き出たリードの長さは ０．５ｍｍ〜１．５ｍｍ
程度であり， 従来のＩＣのリード長（３ｍｍ程度）
に比較して半分以下となるため， リード先端への荷
重は従来の倍以上の荷重でも変形する事がなく強度的に
も充分耐え得る事が出来る。FIG. 3(a) is SOP, FIG. 2(b) is QFP
FIG. 3(c) is a perspective view of each completed product, and FIG. 3(c) is a sectional view of the completed product in which the lead bending and shaping portion 5 is sealed with resin. As you can see from the state of the finished product in Figure 3, the length of the leads protruding from the IC package is 0.5 mm to 1.5 mm.
The lead length of conventional ICs (about 3 mm)
Since the load on the lead tip is more than half that of the conventional lead, it does not deform and can withstand sufficient strength.
【００２７】[0027]
【発明の効果】以上説明したように， 本発明によれば
， 従来のＩＣの欠点であったリード変形障害に対して
リード整形部を樹脂封止で固定することにより，リード
の平坦性及び変形が格段に改善され，尚且つ樹脂封止の
二重化により耐湿性も改善される。[Effects of the Invention] As explained above, according to the present invention, the flatness and deformation of the lead can be improved by fixing the lead shaping part with resin sealing to prevent lead deformation, which is a drawback of conventional ICs. is significantly improved, and moisture resistance is also improved due to the double resin sealing.
【００２８】また，リードが外力に対して充分な強度が
あるため，ＩＣの製造工程・試験工程上におけるリード
の浮き・曲がり等の変形障害が大幅に改善され，ＩＣの
出荷梱包・輸送等に対してもリードの変形を防ぐことが
可能となり，更に，ＩＣをプリント基板上に実装する上
でもリードの平坦性が良いため，基板とリードの隙間が
均一となり半田付け不良が大幅に改善される。In addition, since the leads have sufficient strength against external forces, deformation problems such as lifting and bending of the leads during the IC manufacturing process and testing process are greatly reduced, making it easier to ship, package, and transport the IC. In addition, the flatness of the leads is good even when mounting the IC on a printed circuit board, so the gap between the board and the leads is uniform, which greatly reduces soldering defects. .
【００２９】よって，ＩＣの製造・試験・梱包から実装
に至るまでの取り扱いが非常に容易なものとなり，且つ
，製造工程上での不良障害が改善され，歩留り及び品質
が向上するため，トータルコストが安くなり，極めて広
範囲に有益をもたらすことが可能となる。[0029] Therefore, handling from IC manufacturing, testing, packaging to mounting becomes extremely easy, and defects and failures in the manufacturing process are improved, yield and quality are improved, so the total cost is reduced. becomes cheaper and can have extremely wide-ranging benefits.
【図１】 本発明の原理説明図[Figure 1] Diagram explaining the principle of the present invention
【図２】 本発明の一実施例の説明図（その１）[Figure 2] Explanatory diagram of one embodiment of the present invention (Part 1)
【図
３】 本発明の一実施例の説明図（その２）[Fig. 3] Explanatory diagram of one embodiment of the present invention (Part 2)
【図４】
従来例の説明図[Figure 4]
Explanatory diagram of conventional example
１ リードフレーム ２ ダイステージ ３ チップ ４ リード ５ 第一のモールド樹脂 ６ リード曲げ整形部 ７ 第二のモールド樹脂 ８ 稲妻形状パターン ９ ダムバー 1 Lead frame 2 Die stage 3 Chip 4 Lead 5 First mold resin 6 Lead bending shaping section 7 Second mold resin 8 Lightning bolt shape pattern 9 Dam Bar
Claims (1)
ジ（２） にダイス付けされたチップ（３） を樹脂封
止する第一のモールド樹脂封止工程と，リード（４）
をリード曲げ整形してリード曲げ整形部（６） を形成
する工程と，該リード曲げ整形部（６） を樹脂封止す
る第二のモールド樹脂封止工程とを含むことを特徴とす
る半導体装置の製造方法。[Claim 1] A first mold resin sealing step of resin sealing a chip (3) diced on a die stage (2) of a lead frame (1), and a lead (4).
A semiconductor device comprising: a step of bending and shaping a lead to form a lead bending and shaping portion (6); and a second molding resin sealing step of sealing the lead bending and shaping portion (6) with resin. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3045811A JPH04263459A (en) | 1991-02-18 | 1991-02-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3045811A JPH04263459A (en) | 1991-02-18 | 1991-02-18 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04263459A true JPH04263459A (en) | 1992-09-18 |
Family
ID=12729641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3045811A Pending JPH04263459A (en) | 1991-02-18 | 1991-02-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04263459A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232307A (en) * | 1993-01-28 | 1994-08-19 | Rohm Co Ltd | Method of manufacturing semiconductor device and lead frame |
| CN111668107A (en) * | 2012-12-06 | 2020-09-15 | 美格纳半导体有限公司 | Multi-chip package and method of manufacturing the same |
-
1991
- 1991-02-18 JP JP3045811A patent/JPH04263459A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232307A (en) * | 1993-01-28 | 1994-08-19 | Rohm Co Ltd | Method of manufacturing semiconductor device and lead frame |
| CN111668107A (en) * | 2012-12-06 | 2020-09-15 | 美格纳半导体有限公司 | Multi-chip package and method of manufacturing the same |
| US12057377B2 (en) | 2012-12-06 | 2024-08-06 | Magnachip Semiconductor, Ltd. | Multichip packaged semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20040029318A1 (en) | Semiconductor device having contact prevention spacer | |
| US5541447A (en) | Lead frame | |
| JP4615282B2 (en) | Manufacturing method of semiconductor package | |
| KR19980044243A (en) | Printed Circuit Board Strips for Semiconductor Packages | |
| US6078099A (en) | Lead frame structure for preventing the warping of semiconductor package body | |
| JP2000294711A (en) | Lead frame | |
| JP2806328B2 (en) | Resin-sealed semiconductor device and method of manufacturing the same | |
| US5036381A (en) | Multiple electronic devices within a single carrier structure | |
| JPH04263459A (en) | Manufacture of semiconductor device | |
| JP3015550B2 (en) | Semiconductor device lead frame | |
| JPH06236956A (en) | Semiconductor device and its manufacture | |
| US20230005824A1 (en) | Method of manufacturing substrates for semiconductor devices, corresponding substrate and semiconductor device | |
| JP2513062B2 (en) | Lead frame and method for manufacturing semiconductor device | |
| JPH0661378A (en) | Semiconductor device | |
| JPH0653399A (en) | Resin-sealed semiconductor device | |
| JPS62229864A (en) | Semiconductor device | |
| KR100231822B1 (en) | Lead farme having a tape | |
| JP2504194B2 (en) | Method for manufacturing resin-sealed semiconductor device | |
| JPH05326801A (en) | Semiconductor device and its lead frame | |
| KR20020052587A (en) | Mold for Manufacturing Semiconductor Package | |
| JPH02228053A (en) | Formation of outer lead of resin-sealed semiconductor device | |
| JPH02156660A (en) | Manufacture of semiconductor device | |
| JPH08316371A (en) | Resin sealed semiconductor device | |
| JPH0661412A (en) | Resin-sealed semiconductor device and its manufacture | |
| JPH0493056A (en) | Resin sealed semiconductor device |