JPH04261031A - Semiconductor device die bonding method - Google Patents
Semiconductor device die bonding methodInfo
- Publication number
- JPH04261031A JPH04261031A JP3016369A JP1636991A JPH04261031A JP H04261031 A JPH04261031 A JP H04261031A JP 3016369 A JP3016369 A JP 3016369A JP 1636991 A JP1636991 A JP 1636991A JP H04261031 A JPH04261031 A JP H04261031A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- paste
- semiconductor device
- wire bonding
- bonding method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims description 14
- 239000010949 copper Substances 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 5
- 229910052709 silver Inorganic materials 0.000 claims abstract description 5
- 239000004332 silver Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 14
- 238000011109 contamination Methods 0.000 abstract description 5
- 230000007423 decrease Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L2224/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体素子のリードフ
レームへのダイボンディング方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of die bonding a semiconductor element to a lead frame.
【０００２】0002
【従来の技術】図２は半導体素子の実装工程を示す概略
図で、リードフレーム１は銅（Ｃｕ）で形成されており
、同図（ｂ）に示すように、接着剤である銀（Ａｇ）ペ
ースト２をディスペンス、転写等の方法によりリードフ
レーム１上に塗布し、その上に同図（ｃ）に示すように
、半導体素子３を位置決めし搭載する。しかる後、同図
（ｄ）に示すようにＡｇペースト２を硬化させ、銅線（
Ｃｕワイヤ）４をボンディングし（同図（ｅ）参照）、
次工程である封止工程へ送る。2. Description of the Related Art FIG. 2 is a schematic diagram showing the mounting process of a semiconductor element. A lead frame 1 is made of copper (Cu), and as shown in FIG. ) The paste 2 is applied onto the lead frame 1 by a method such as dispensing or transfer, and the semiconductor element 3 is positioned and mounted thereon as shown in FIG. 3(c). After that, as shown in the figure (d), the Ag paste 2 is hardened and the copper wire (
(Cu wire) 4 (see figure (e)),
Send to the next process, the sealing process.
【０００３】0003
【発明が解決しようとする課題】ところで、通常Ａｇペ
ースト２の硬化は、メッキ処理の施されていないＣｕリ
ードフレーム１を用いたＣｕワイヤボンディングを行う
場合、窒素（Ｎ２）ガスを充填した乾燥器中で行うが、
この時、Ａｇペースト２から発生する有機性ガスがリー
ドフレーム１上に滞留し、ワイヤボンディングを行うリ
ードフレーム１を汚染し、ボンディング性能を低下させ
ていた。[Problems to be Solved by the Invention] By the way, when performing Cu wire bonding using a Cu lead frame 1 that has not been plated, the Ag paste 2 is usually cured in a dryer filled with nitrogen (N2) gas. It is done inside, but
At this time, organic gas generated from the Ag paste 2 remained on the lead frame 1, contaminated the lead frame 1 on which wire bonding was performed, and degraded bonding performance.
【０００４】図３は上記プロセスを示すもので、エポキ
シ樹脂またはポリイミド樹脂をベースとするＡｇペース
ト２から発生する有機性ガス（矢印線で示す）は、Ｎ２
ガスと比べ比重が大きく、リードフレーム１上に滞留
し、有機性付着物５となる。FIG. 3 shows the above process, in which the organic gas (indicated by the arrow line) generated from the Ag paste 2 based on epoxy resin or polyimide resin is N2
It has a higher specific gravity than gas, so it stays on the lead frame 1 and becomes an organic deposit 5.
【０００５】本発明は、上記問題点を解決するためにな
されたもので、その目的とするところは、リードフレー
ム表面の有機汚染を防止し、ボンディング性の低下を抑
えることができる半導体素子のダイボンディング方法を
提供することにある。The present invention has been made to solve the above-mentioned problems, and its purpose is to prevent organic contamination on the surface of a lead frame and to suppress deterioration in bonding properties of a die of a semiconductor element. The object of the present invention is to provide a bonding method.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
本発明に係る半導体素子のダイボンディング方法は、銅
製のリードフレームに銀ペーストを塗布し、該ペースト
上に半導体素子を搭載した後、リードフレーム下方から
熱板によって加熱すると共に、上方から加熱された窒素
ガスをリードフレームに吹きつけることにより、ペース
トを硬化させたことを特徴とする。[Means for Solving the Problems] In order to solve the above problems, a die bonding method for a semiconductor element according to the present invention involves applying a silver paste to a copper lead frame, mounting a semiconductor element on the paste, and then mounting a lead frame on a lead frame made of copper. The paste is cured by heating the lead frame from below with a hot plate and by blowing heated nitrogen gas onto the lead frame from above.
【０００７】[0007]
【作用】本発明によれば、加熱された窒素ガスが上方よ
り吹きつけられるので、銀ペーストから発生する有機性
ガスのリードフレーム上の滞留が無くなり、ワイヤボン
ディングを行うリードフレームの有機汚染を防止できる
。これにより、後工程の銅線のワイヤボンディング性が
改善される。[Operation] According to the present invention, since heated nitrogen gas is blown from above, the organic gas generated from the silver paste does not remain on the lead frame, thereby preventing organic contamination of the lead frame where wire bonding is performed. can. This improves the wire bonding properties of the copper wire in the subsequent process.
【０００８】[0008]
【実施例】図１は本発明の一実施例を示すものであり、
本実施例においては、メッキ処理の施されていないＣｕ
リードフレーム１上にＡｇペースト２を塗布し、その上
に半導体素子３を搭載した後に、熱板６上に前記リード
フレーム１を置き、同時に上方から加熱されたＮ２ ガ
ス（図中、矢印線で示す）をリードフレーム１に向かっ
て吹きつけてＡｇペースト２を硬化する。[Example] Figure 1 shows an example of the present invention.
In this example, Cu is not plated.
After applying Ag paste 2 on the lead frame 1 and mounting the semiconductor element 3 on it, the lead frame 1 is placed on the hot plate 6, and at the same time, N2 gas heated from above (indicated by the arrow line in the figure) is placed on the hot plate 6. The Ag paste 2 is hardened by spraying the Ag paste 2 (as shown) toward the lead frame 1.
【０００９】Ｎ２ ガスの加熱は、ガス配管７の周りに
巻き付けたヒータ（図示せず）で行うとともに、温度コ
ントロールも行う。なお、連続的に処理を行う場合には
、熱板６上にベルトコンベアを設置し処理すれば、容易
に行える。[0009] The N2 gas is heated by a heater (not shown) wrapped around the gas pipe 7, and the temperature is also controlled. It should be noted that if the processing is to be carried out continuously, it can be easily carried out by installing a belt conveyor on the hot plate 6 and carrying out the processing.
【００１０】本実施例によれば、加熱されたＮ２ ガス
をリードフレーム１に向かって吹きつけられるので、ワ
イヤボンディングされるリードフレーム１への有機性ガ
スの付着を防止でき、ボンディング性の低下を防ぐこと
ができる。また、常にＮ２ ガスが吹きつけられている
ことで、リードフレーム１の酸化も防止でき、この後行
うＣｕワイヤボンディング時の表面の還元にも効果があ
る。
さらに、従来の乾燥器にＮ２ ガスを充填して行うＡｇ
ペースト２の硬化に比べ、連続処理が容易に行えるとい
うメリットもある。According to this embodiment, since the heated N2 gas is blown toward the lead frame 1, it is possible to prevent organic gas from adhering to the lead frame 1 to be wire-bonded, thereby reducing the deterioration of bonding performance. It can be prevented. Further, by constantly spraying N2 gas, oxidation of the lead frame 1 can be prevented, and it is also effective in reducing the surface during the subsequent Cu wire bonding. Furthermore, Ag
There is also the advantage that continuous processing can be performed more easily than in the case of curing paste 2.
【００１１】このように、Ｃｕワイヤボンディングを行
う工程が後にあるＡｇペーストの硬化では、従来のＡｕ
ワイヤボンディング工程のそれと比べ、リードフレーム
の酸化防止は勿論のこと、Ａｇペーストから発生する微
量のガスについても考慮する必要があり、特に有効であ
る。[0011] As described above, in the curing of Ag paste, which is followed by the step of performing Cu wire bonding, the conventional Au
Compared to the wire bonding process, it is particularly effective because it is necessary to take into account not only prevention of oxidation of the lead frame but also trace amounts of gas generated from the Ag paste.
【００１２】0012
【発明の効果】本発明によれば、Ｃｕワイヤボンディン
グを行う工程が後にあるＡｇペーストの硬化を、リード
フレーム下方からの熱板による加熱と、上方からリード
フレームへ吹きつける加熱された窒素ガスとにより行う
ようにしたので、リードフレーム表面の有機汚染を防止
し、ボンディング性の低下を抑えることができる。According to the present invention, the hardening of the Ag paste, which is followed by the step of performing Cu wire bonding, is performed by heating with a hot plate from below the lead frame and heated nitrogen gas blown onto the lead frame from above. Since this is done, organic contamination on the surface of the lead frame can be prevented and deterioration in bonding performance can be suppressed.
【図１】本発明の一実施例を示す概略図である。FIG. 1 is a schematic diagram showing an embodiment of the present invention.
【図２】半導体素子の実装工程を示す概略図である。FIG. 2 is a schematic diagram showing a mounting process of a semiconductor element.
【図３】従来例を示す概略図である。FIG. 3 is a schematic diagram showing a conventional example.
１ リードフレーム ２ 銀ペースト ３ 半導体素子 ４ 銅線 ５ 有機性付着物 ６ 熱板 ７ ガス配管 1 Lead frame 2 Silver paste 3 Semiconductor element 4 Copper wire 5. Organic deposits 6 Hot plate 7 Gas piping
Claims (1)
塗布し、該ペースト上に半導体素子を搭載した後、前記
ペーストを硬化させてなる半導体素子のダイボンディン
グ方法において、前記ペーストの硬化を、リードフレー
ム下方からの熱板による加熱と、上方からリードフレー
ムへ吹きつける加熱された窒素ガスとにより行うことを
特徴とする半導体素子のダイボンディング方法。1. A die bonding method for a semiconductor device, which comprises applying a silver paste to a copper lead frame, mounting a semiconductor device on the paste, and then hardening the paste. A die bonding method for semiconductor devices, characterized in that heating is performed using a hot plate from below and heated nitrogen gas is blown onto a lead frame from above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3016369A JPH04261031A (en) | 1991-02-07 | 1991-02-07 | Semiconductor device die bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3016369A JPH04261031A (en) | 1991-02-07 | 1991-02-07 | Semiconductor device die bonding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04261031A true JPH04261031A (en) | 1992-09-17 |
Family
ID=11914396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3016369A Pending JPH04261031A (en) | 1991-02-07 | 1991-02-07 | Semiconductor device die bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04261031A (en) |
-
1991
- 1991-02-07 JP JP3016369A patent/JPH04261031A/en active Pending
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