JPH04254829A - Active device - Google Patents
Active deviceInfo
- Publication number
- JPH04254829A JPH04254829A JP3016516A JP1651691A JPH04254829A JP H04254829 A JPH04254829 A JP H04254829A JP 3016516 A JP3016516 A JP 3016516A JP 1651691 A JP1651691 A JP 1651691A JP H04254829 A JPH04254829 A JP H04254829A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- active device
- ferroelectric layer
- insulating substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 abstract description 21
- 239000011521 glass Substances 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 29
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- FCYVWWWTHPPJII-UHFFFAOYSA-N 2-methylidenepropanedinitrile Chemical compound N#CC(=C)C#N FCYVWWWTHPPJII-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は液晶に電圧を印加するも
のであり、液晶装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention applies a voltage to a liquid crystal, and relates to a liquid crystal device.
【0002】0002
【従来の技術】従来、図2に示すようにガラス基板から
なる絶縁基板1上にITOから成る透明電極6が設けら
れ、透明電極6上にVDF/TrFE(フッ化ビニリデ
ン/トリフルオロエチレン)共重合体から成る強誘電体
層4が設けられ、強誘電体層4を介し透明電極6の一部
を覆うように配線電極7を具備したアクティブデバイス
が知られていた。2. Description of the Related Art Conventionally, as shown in FIG. 2, a transparent electrode 6 made of ITO is provided on an insulating substrate 1 made of a glass substrate. An active device is known in which a ferroelectric layer 4 made of a polymer is provided and a wiring electrode 7 is provided so as to partially cover a transparent electrode 6 through the ferroelectric layer 4 .
【0003】0003
【発明が解決しようとする課題】しかし、従来の技術に
はITOと強誘電体層間の密着性が悪く、アクティブデ
バイスを動作させるとそこに剥がれが生じていた。その
ためアクティブデバイスの素子出力の経時変化が大きい
という課題を有していた。However, in the conventional technology, the adhesion between the ITO and the ferroelectric layer was poor, and peeling occurred there when the active device was operated. Therefore, there is a problem in that the element output of the active device changes significantly over time.
【0004】本発明は従来のこのような課題を解決する
もので、目的とするところは素子出力の経時変化の小さ
いアクティブデバイスを提供することである。The present invention is intended to solve these conventional problems, and an object thereof is to provide an active device in which the change in element output over time is small.
【0005】[0005]
【課題を解決するための手段】本発明のアクティブデバ
イスは絶縁基板上に設けられた島状の第一の電極、前記
第一の電極と接続され島状に設けられた第二の電極、少
なくとも前記第一の電極の一部を覆うように設けられた
強誘電体層、前記強誘電体層を介し前記第一の電極の少
なくとも一部を覆うように設けられた第三の電極を具備
したことを特徴とする。[Means for Solving the Problems] The active device of the present invention includes a first island-shaped electrode provided on an insulating substrate, a second electrode connected to the first electrode and provided in an island-like shape, and at least A ferroelectric layer provided to cover a portion of the first electrode, and a third electrode provided to cover at least a portion of the first electrode via the ferroelectric layer. It is characterized by
【0006】[0006]
【実施例】図1は本発明にかかるアクティブデバイスを
示す図である。図1(a)は上視図であり、同図(b)
は同図A−Aラインに於ける断面図である。ガラス基板
から成る絶縁基板1上にCrから成る島状の第一の電極
2が設けられている。第一の電極2と接続され、島状に
設けられたITOから成る第二の電極3が設けられてい
る。第一、第二の電極2、3上に絶縁基板1全面を覆う
ようにVDF/TrFE(フッ化ビニリデン/トリフル
オロエチレン)共重合体からなる強誘電体層4が設けら
れている。強誘電体層4を介し第一の電極2の一部を覆
うように第三の電極5が強誘電体層4上に設けられてい
る。アクティブデバイスの能動層は第一と第二の電極2
、3でサンドイッチ状に挟まれた強誘電体層4である。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an active device according to the present invention. FIG. 1(a) is a top view, and FIG. 1(b) is a top view.
is a cross-sectional view taken along line A-A in the figure. An island-shaped first electrode 2 made of Cr is provided on an insulating substrate 1 made of a glass substrate. A second electrode 3 made of ITO and arranged in an island shape is connected to the first electrode 2 . A ferroelectric layer 4 made of a VDF/TrFE (vinylidene fluoride/trifluoroethylene) copolymer is provided on the first and second electrodes 2 and 3 so as to cover the entire surface of the insulating substrate 1. A third electrode 5 is provided on the ferroelectric layer 4 so as to partially cover the first electrode 2 with the ferroelectric layer 4 in between. The active layer of the active device includes the first and second electrodes 2
, 3 in a sandwich-like manner.
【0007】第一と第二の電極2、3の接続部において
、第二の電極3は第一の電極2全体を覆い、その一部が
絶縁基板1上に存在するように設けられている。これに
より第一と第二の電極2、3間の密着性が向上し、接続
抵抗を低減することができる。[0007] At the connection portion between the first and second electrodes 2 and 3, the second electrode 3 is provided so as to cover the entire first electrode 2 and a portion thereof is present on the insulating substrate 1. . This improves the adhesion between the first and second electrodes 2 and 3, making it possible to reduce connection resistance.
【0008】本発明のアクティブデバイスは能動層であ
る強誘電体層4中の自発分極を外部から印加する電圧で
反転させることにより動作し、素子出力を得る。強誘電
体層4は圧電性も有しているため、この際強誘電体層4
は振動する。この振動のため強誘電体層4と接触してい
る電極間で剥がれが生じやすい。特にそれは振動の固定
端となる絶縁基板1側との電極間で顕著となる。剥がれ
が生じると強誘電体層4に十分電圧が印加されなくなり
、十分な素子動作を行なうことができなくなる。このた
めに素子出力が時間と共に低下する経時変化が生じる。
この経時変化は絶縁基板側の電極がITOで形成されて
いる際は特に大きくなる。これは強誘電体材料とITO
との密着力が弱いからである。そこで本実施例において
はITOより強誘電体材料と密着力が強いCrからなる
第一の電極2を用いることにより経時変化を大幅に低減
させた。ITOを用いていた際は3時間素子を動作させ
ると素子出力は半分になっていたがCrからなる第一の
電極2を用いることにより素子出力の低下量を10%に
おさえることができた。さらに後に述べる本発明のアク
ティブデバイスを用いた液晶素子の寿命をこれにより3
0時間から3000時間に伸ばすことができた。The active device of the present invention operates by inverting the spontaneous polarization in the ferroelectric layer 4, which is an active layer, with an externally applied voltage to obtain an element output. Since the ferroelectric layer 4 also has piezoelectricity, the ferroelectric layer 4
vibrates. This vibration tends to cause peeling between the electrodes that are in contact with the ferroelectric layer 4. This is particularly noticeable between the electrodes and the insulating substrate 1 side, which is the fixed end of the vibration. If peeling occurs, sufficient voltage will not be applied to the ferroelectric layer 4, making it impossible for the device to operate satisfactorily. This causes a change over time in which the element output decreases over time. This change over time becomes particularly large when the electrode on the insulating substrate side is made of ITO. This is a ferroelectric material and ITO
This is because the adhesion between the two is weak. Therefore, in this example, the change over time was significantly reduced by using the first electrode 2 made of Cr, which has stronger adhesion to the ferroelectric material than ITO. When ITO was used, the device output was halved after operating the device for 3 hours, but by using the first electrode 2 made of Cr, the reduction in device output could be suppressed to 10%. Furthermore, this will reduce the lifespan of a liquid crystal element using the active device of the present invention to be described later.
I was able to extend it from 0 hours to 3000 hours.
【0009】また図1において、第一の電極2と強誘電
体層4の間に密着層を設けてもよい。この密着層は少な
くとも能動層を形成する領域に設けられておればよい。
例えば第一、第二の電極2、3を含む絶縁基板1上全面
に設けてもよい。そしてこの密着層は第一の電極2と強
誘電体層4間の密着を高めるために用いられる。例えば
シランカップリング材を用いることができる。これはI
TOより第一の電極2として用いているCrにより強く
密着する。そのため強誘電体層4と第一の電極2間の密
着力が強くなり素子出力の経時変化が小さくなった。こ
れにより先の液晶素子の寿命を30000時間とするこ
とができた。ここで密着層に用いるのはシランカップリ
ング材に限る必要はなく、他のカップリング材やPMM
A、アクリル、エポキシ等の有機材料を用いてもよい。
もちろん有機材料とカップリング材との混合材料を用い
てもよい。またこれらの材料はITOとの密着力がCr
に比べて弱い。Further, in FIG. 1, an adhesive layer may be provided between the first electrode 2 and the ferroelectric layer 4. This adhesive layer may be provided at least in the region where the active layer is to be formed. For example, it may be provided over the entire surface of the insulating substrate 1 including the first and second electrodes 2 and 3. This adhesion layer is used to enhance the adhesion between the first electrode 2 and the ferroelectric layer 4. For example, a silane coupling material can be used. This is I
It adheres more strongly to Cr used as the first electrode 2 than TO. Therefore, the adhesion between the ferroelectric layer 4 and the first electrode 2 is strong, and the change in the device output over time is reduced. This made it possible to increase the lifespan of the liquid crystal element to 30,000 hours. Here, it is not necessary to limit the silane coupling material to be used for the adhesion layer; other coupling materials or PMM may be used.
Organic materials such as A, acrylic, and epoxy may also be used. Of course, a mixed material of an organic material and a coupling material may also be used. In addition, these materials have a strong adhesion with ITO of Cr.
weak compared to
【0010】図1において絶縁基板1上に第二の電極3
を設け、続いて第一の電極2を設けてもよい。その際は
第一と第二の電極2、3の接続部において第一の電極2
は第二の電極3を覆い、その一部が絶縁基板1上に存在
している。In FIG. 1, a second electrode 3 is placed on an insulating substrate 1.
may be provided, and then the first electrode 2 may be provided. In that case, the first electrode 2
covers the second electrode 3, and a portion thereof is present on the insulating substrate 1.
【0011】図1において、絶縁基板1として用いるの
はガラス基板に限る必要はなく、有機絶縁基板等の他の
基板を用いてもよい。第一の電極2に用いるのはCrに
限る必要はなく、Au、Ag、Ti、Ta、Al、Mo
等の金属やSi等の半導体、シリサイド、高分子導電体
、超伝導体、ZnO等の透明電極を用いてもよい。どの
材料を用いても強誘電体層4との密着力はITOより強
い。第二の電極3に用いるのはITOに限る必要はなく
、他の透明電極や第一の電極2に用いることのできる材
料を用いてもよい。強誘電体材料4に用いるのはVDF
/TrFE共重合体に限る必要はなくフッ化ビニリデン
とテトラフルオロエチレンとの共重合体、シアン化ビニ
リデンと酢酸ビニルとの共重合体やポリフッ化ビニリデ
ン等の有機強誘電体、あるいはBaTiO3等の無機強
誘電体を用いてもよい。第三の電極5に用いるのはAl
に限る必要はなく第一の電極2に用いる材料を用いても
よい。In FIG. 1, the insulating substrate 1 used is not limited to a glass substrate, and other substrates such as an organic insulating substrate may also be used. It is not necessary to limit the material used for the first electrode 2 to Cr; Au, Ag, Ti, Ta, Al, Mo
Transparent electrodes such as metals such as metals, semiconductors such as Si, silicides, polymer conductors, superconductors, and ZnO may also be used. No matter which material is used, the adhesion to the ferroelectric layer 4 is stronger than that of ITO. The material used for the second electrode 3 is not limited to ITO, and other transparent electrodes or materials that can be used for the first electrode 2 may be used. VDF is used for ferroelectric material 4
/TrFE copolymer, organic ferroelectric materials such as copolymers of vinylidene fluoride and tetrafluoroethylene, copolymers of vinylidene cyanide and vinyl acetate, polyvinylidene fluoride, or inorganic materials such as BaTiO3. A ferroelectric material may also be used. Al is used for the third electrode 5.
There is no need to limit the material to the material used for the first electrode 2.
【0012】図1においては強誘電体層4を絶縁基板1
上全面に形成したが、第三の電極5を形成後にそれをマ
スクとして強誘電体層4をエッチングし除去してもよい
。もちろん除去されるのは強誘電体層4と絶縁基板1間
にサンドイッチ状に保持されていない領域の強誘電体層
4である。そして強誘電体層4を膜厚方向に一部除去し
てもよいし、すべて除去してもよい。In FIG. 1, the ferroelectric layer 4 is connected to the insulating substrate 1.
Although the third electrode 5 is formed on the entire upper surface, the ferroelectric layer 4 may be etched and removed using the third electrode 5 as a mask. Of course, what is removed is the region of the ferroelectric layer 4 that is not held sandwiched between the ferroelectric layer 4 and the insulating substrate 1. Then, the ferroelectric layer 4 may be partially or completely removed in the thickness direction.
【0013】本発明のアクティブデバイスを用いた液晶
素子を図3に示す。図3(a)は上視図、同図(b)は
同図(a)A−Aラインにおける断面図である。ガラス
基板から成る絶縁基板1上にCrから成る第一の電極2
、ITOから成る第二の電極3、VDFとTrFEとの
共重合体から成る強誘電体層4、Alから成る第三の電
極5で構成されるアクティブデバイスを具備した素子基
板とガラスから成る絶縁基板8上にITOから成る対向
電極9で構成される対向基板の間に液晶を保持した液晶
素子である。FIG. 3 shows a liquid crystal element using the active device of the present invention. FIG. 3(a) is a top view, and FIG. 3(b) is a sectional view taken along line A-A in FIG. 3(a). A first electrode 2 made of Cr is disposed on an insulating substrate 1 made of a glass substrate.
, a second electrode 3 made of ITO, a ferroelectric layer 4 made of a copolymer of VDF and TrFE, and a third electrode 5 made of Al. This is a liquid crystal element in which liquid crystal is held between opposing substrates consisting of a opposing electrode 9 made of ITO on a substrate 8.
【0014】図3において絶縁基板8、対向電極9とし
て用いるのはガラス基板やITOに限る必要はなく、図
1中の絶縁基板1や第二の電極3と同じ材料を用いても
よい。また、素子基板と対向基板の間に保持するのは液
晶に限る必要はなく電圧により光の透過率や発光、非発
光状態を制御出来るものを用いてもよい。In FIG. 3, the materials used for the insulating substrate 8 and the counter electrode 9 are not limited to glass substrates and ITO, and the same materials as the insulating substrate 1 and the second electrode 3 in FIG. 1 may be used. Further, what is held between the element substrate and the counter substrate is not limited to liquid crystal, and it is also possible to use a material whose light transmittance and light emitting/non-emitting state can be controlled by voltage.
【0015】[0015]
【発明の効果】以上説明したように、本発明のアクティ
ブデバイスは素子出力の経時変化が小さい。As explained above, the active device of the present invention has a small change in element output over time.
【図1】本発明のアクティブデバイスを示す図である。FIG. 1 shows an active device of the invention.
【図2】従来のアクティブデバイスを示す図である。FIG. 2 shows a conventional active device.
【図3】本発明のアクティブデバイスを用いた液晶素子
を示す図である。FIG. 3 is a diagram showing a liquid crystal element using the active device of the present invention.
1 絶縁基板 2 第一の電極 3 第二の電極 4 強誘電体層 5 第三の電極 6 透明電極 7 配線電極 8 絶縁基板 9 対向電極 1 Insulating substrate 2 First electrode 3 Second electrode 4 Ferroelectric layer 5 Third electrode 6 Transparent electrode 7 Wiring electrode 8 Insulating substrate 9 Counter electrode
Claims (1)
、前記第一の電極と接続され島状に設けられた第二の電
極、少なくとも前記第一の電極の一部を覆うように設け
られた強誘電体層、前記強誘電体層を介し前記第一の電
極の少なくとも一部を覆うように設けられた第三の電極
を具備したことを特徴とするアクティブデバイス。Claims: 1. A first island-shaped electrode provided on an insulating substrate; a second electrode connected to the first electrode and provided in an island shape; covering at least a portion of the first electrode; What is claimed is: 1. An active device comprising: a ferroelectric layer provided as shown in FIG.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3016516A JPH04254829A (en) | 1991-02-07 | 1991-02-07 | Active device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3016516A JPH04254829A (en) | 1991-02-07 | 1991-02-07 | Active device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04254829A true JPH04254829A (en) | 1992-09-10 |
Family
ID=11918439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3016516A Pending JPH04254829A (en) | 1991-02-07 | 1991-02-07 | Active device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04254829A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010147153A (en) * | 2008-12-17 | 2010-07-01 | Shinko Electric Ind Co Ltd | Semiconductor apparatus and method of manufacturing the same |
-
1991
- 1991-02-07 JP JP3016516A patent/JPH04254829A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010147153A (en) * | 2008-12-17 | 2010-07-01 | Shinko Electric Ind Co Ltd | Semiconductor apparatus and method of manufacturing the same |
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