JPH0425151A - Thin plate carrying device - Google Patents

Thin plate carrying device

Info

Publication number
JPH0425151A
JPH0425151A JP2129181A JP12918190A JPH0425151A JP H0425151 A JPH0425151 A JP H0425151A JP 2129181 A JP2129181 A JP 2129181A JP 12918190 A JP12918190 A JP 12918190A JP H0425151 A JPH0425151 A JP H0425151A
Authority
JP
Japan
Prior art keywords
thin plate
wafer
detection
detected
tilted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2129181A
Other languages
Japanese (ja)
Other versions
JP2826763B2 (en
Inventor
Eiichi Murakami
栄一 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP12918190A priority Critical patent/JP2826763B2/en
Publication of JPH0425151A publication Critical patent/JPH0425151A/en
Application granted granted Critical
Publication of JP2826763B2 publication Critical patent/JP2826763B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Geophysics And Detection Of Objects (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Controlling Sheets Or Webs (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To enable a thin plate to be accurately detected even if the thin plate is tilted in a carrier by a method wherein a detection beam is tilted to the thin plate. CONSTITUTION:A beam source is previously arranged so as to enable a beam to impinge on the surface of a thin plate 1 forming a certain incident angle with the thin plate 1. For instance, when a beam L is tilted by an angle larger than the angle of inclination + or -alpha of a wafer, the P side edge (hand takeout- intake side) is detected without fail, and moreover the beam L is prevented from being reflected from the underside of the wafer, and even if the beam L is reflected by the upside of the wafer 1, it is shut off by a pinhole 6b as it travels in a direction tilted by an angle of theta+ or -2alpha, Therefore, either the upside or the underside of the thin plate 1 can be detected, so that the accurate height of the thin plate 1 can be detected eliminating the light reflected from the surface of the thin plate 1. By this setup, the mis-detection of the presence and the height of the thin plate can be prevented when the thin plate 1 is tilted inside a carrier.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、薄板収納用のキャリアに対して薄板薄板を搬
出入するための装置に関し、特に、半導体焼付装置や表
面検査装置等の半導体製造装置において、マスク、レヂ
クルまたは半導体ウェハ等の薄板をキャリアから取り出
したり、キャリア内に収納するために用いて好適な薄板
搬出入装置に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a device for loading and unloading thin sheets into and out of a carrier for storing thin sheets, and in particular to a device for semiconductor manufacturing such as a semiconductor printing device and a surface inspection device. The present invention relates to a thin plate loading/unloading device suitable for use in a device to take out a thin plate such as a mask, a resicle, or a semiconductor wafer from a carrier and to store it in the carrier.

[従来の技術] 第2図 (a)〜(C)は、従来のウェハ搬出入装置の
一例を示す。図の装置においては、複数枚のウェハ1を
収納したキャリア2から所定のウェハ1をハント3によ
り搬出入する場合、以下のように行なっていた。
[Prior Art] FIGS. 2(a) to 2(C) show an example of a conventional wafer loading/unloading device. In the apparatus shown in the figure, when a predetermined wafer 1 is carried in and out of a carrier 2 containing a plurality of wafers 1 by means of the hunt 3, the procedure is as follows.

発光素子4から光ビームLをウェハ1の平面に対し平行
に入射し、これを受光素子5て検知する。エレベータ機
構(駆動部は不図示)7によりキャリア2を上下に駆動
することによって、ウェハ1かビームを遮断し、第2図
(C)の如き信号が受光素子5に検出され半導体メモリ
等に記憶される。
A light beam L is incident from the light emitting element 4 parallel to the plane of the wafer 1, and is detected by the light receiving element 5. By driving the carrier 2 up and down by an elevator mechanism (driving unit not shown) 7, the wafer 1 or the beam is intercepted, and a signal as shown in FIG. 2(C) is detected by the light receiving element 5 and stored in a semiconductor memory or the like. be done.

第2図(C)の信号に対し一定のスライスレヘルを設定
することにより、任意のウェハ1の位置(所定の基準位
置からの高さ)を求めることかできる。この位置(高さ
)データからハンド3の高さに対する任意のウェハ1の
相対位置(a、  b・・・・、e)を算出し、エレベ
ータ7を駆動することによってハント3と任意のウェハ
1の高さを合わせていた。
By setting a constant slice level for the signal shown in FIG. 2(C), the position of an arbitrary wafer 1 (height from a predetermined reference position) can be determined. From this position (height) data, the relative position (a, b..., e) of any wafer 1 with respect to the height of the hand 3 is calculated, and by driving the elevator 7, the hand 3 and any wafer 1 are The height was adjusted.

[発明か解決しようとする課題] しかしなから、従来例ては以下のような欠点かあった。[Invention or problem to be solved] However, the conventional examples have the following drawbacks.

これを、第2図(b) 、  (C)を用いて説明する
。ずなわち、ウェハ1とビームが平行に配置するため、
第2図(b)の如くウェハ1が僅かな角度αたけ傾いた
場合、ビームLはウェハ1の表面て反則しビームL° 
となフて受光素子5で検知される。したかって、本来ウ
ェハ1て遮断されるへきビームしか受光素子5で検知さ
れ、あたかもその位置にはウェハ1か無いという誤検知
をしてしまう。
This will be explained using FIGS. 2(b) and 2(C). That is, since the wafer 1 and the beam are arranged in parallel,
When the wafer 1 is tilted by a slight angle α as shown in FIG.
Then, the light is detected by the light receiving element 5. Therefore, only the beam that would normally be blocked by the wafer 1 is detected by the light receiving element 5, resulting in an erroneous detection as if the wafer 1 were not present at that position.

これを第2図(C)て見る。ウェハ1の傾ぎか無い時の
受光素子5の理想的な出力信号を°゛実線゛。
This can be seen in Figure 2 (C). The ideal output signal of the light receiving element 5 when the wafer 1 is only tilted is shown by the solid line.

て示す時、傾きがあるウェハでは点線で表わしたように
信号がずれてしまう。このずれic’ −Cか検出誤差
となり、この検出信号に従ってハント3をキャリア2内
に挿入した場合、ハント3またはそのハント3に士答載
されたウェハがそこにあるウェハに接触してしまうおそ
れか生しる。
If the wafer is tilted, the signal will shift as shown by the dotted line. This deviation ic' -C will result in a detection error, and if Hunt 3 is inserted into Carrier 2 according to this detection signal, there is a risk that Hunt 3 or the wafer loaded on Hunt 3 will come into contact with the wafer there. It will come to life.

加えて、ウェハが傾いていると検出するエツジの位置に
より゛検出条件゛が異フてしまう。すなわち、第2図(
b)においてハント3か搬出入されるP 側のエツジと
反対側のQ側のエツジのいずれかビームを遮光するかに
よって、受光素子5に対する距離が異なる位置で検出す
ることになる。エツジによる散乱の位置か異れば検出す
る信号の差となり、P側とQ側とて検出差を生しる。P
側とQ側のいずれを検出するかはウェハの傾ぎによるた
め特定することはて奸ず、補正てきないため検出誤差の
要因となっている。
In addition, if the wafer is tilted, the ``detection conditions'' will vary depending on the position of the edge to be detected. In other words, Fig. 2 (
In b), detection is performed at different positions with respect to the light receiving element 5 depending on whether the beam is blocked by the hunt 3, the edge on the P side being carried in or out, or the edge on the Q side opposite to the edge. If the position of scattering due to the edge is different, there will be a difference in the detected signal, resulting in a detection difference between the P side and the Q side. P
Since it is difficult to determine whether to detect the side or the Q side because it depends on the inclination of the wafer, it cannot be corrected and is a cause of detection errors.

木発明は、」上記従来例における問題点に鑑みてノzさ
れたもので、複数個の薄板を互いの平面を対向させかつ
所定の間隙をおいて保持可能なキャリアに対して薄板を
収納したり、取り出したりする薄板搬送装置において、
キャリア内の薄板が傾いた際の薄板の有無および位置の
誤検知を防止することを目的とする。
The invention was made in view of the problems in the conventional example described above, and involves storing a plurality of thin plates in a carrier that can hold the plates with their planes facing each other and leaving a predetermined gap between them. In thin plate conveying equipment for loading and unloading,
The purpose is to prevent erroneous detection of the presence or absence and position of a thin plate when the thin plate in the carrier is tilted.

[課題を解決するための手段および作用コ上記目的を達
成するため、本発明では、キャリア内の薄板の位置を検
出する手段と、キャリア番二対して薄板を収納および/
または取出する搬出入−L段とを具備する薄板搬出入装
置において、キャリア(・コ正常に収納された薄板の表
面に対し、入射ビームを予め仰りて配置したことを特徴
としてい木発明の1つの態様においては、薄板の搬出入
手段剥とその反対側のエツジのうち一方を検出する。
[Means and Operations for Solving the Problems] In order to achieve the above object, the present invention includes means for detecting the position of the thin plate in the carrier, and means for storing and/or storing the thin plate with respect to the carrier number two.
A thin plate loading/unloading device having a loading/unloading stage and an L stage for taking out the thin plate, characterized in that the carrier is arranged so that the incident beam is directed in advance to the surface of the normally stored thin plate. In one embodiment, one of the peeling means for carrying in and out of the thin plate and the edge on the opposite side thereof is detected.

[作用] 上記構成によれは、薄板の表面に対し入射ビームを傾け
たことにより、薄板の上面または下面の一方を検出する
ことかでき、薄板表面からの反射光を除去して、薄板の
正確な高さ検出を可能にすることかできる。また、搬出
入手段剥とその反対側のエツジの一方を検出するように
すれば、ビーム検出位置とビーム遮断位置との距離が一
定となり、薄板位置の検出誤差を小さくすることができ
る。
[Function] According to the above configuration, by tilting the incident beam with respect to the surface of the thin plate, it is possible to detect either the upper surface or the lower surface of the thin plate, and the reflected light from the surface of the thin plate is removed to accurately detect the thin plate. It is possible to perform accurate height detection. Furthermore, if one of the edges on the opposite side of the carrying-in/out means is detected, the distance between the beam detection position and the beam interruption position becomes constant, and the detection error of the thin plate position can be reduced.

[実施例] 以下、図面を用いて本発明の詳細な説明する。[Example] Hereinafter, the present invention will be explained in detail using the drawings.

第1の実施例 第1図(a) lj、本発明の第1の実施例に係るウェ
ハ1般出入装置の構成を示す。
First Embodiment FIG. 1(a) lj shows the configuration of a wafer general loading/unloading device according to a first embodiment of the present invention.

同図において、1  (A、B、・・・・、E)は検出
対象とノ、<るウェハである。2はウェハを収納するキ
ャリアで、エレベータ7上に搭載されている。
In the figure, 1 (A, B, . . . , E) is a wafer to be detected. 2 is a carrier for storing wafers, and is mounted on the elevator 7.

3はウェハ1を搬出入するためのハント、4は半導体レ
ーザなとの発光素子、5はフオI−センサ等の受光素子
である。発光素子4からのビームは、ウェハ1て遮断さ
ねない場合、受光素子で検知される。6aはビームを°
°所望の径゛°にするためのビンポールである。ビーム
径は小さい方が、5て検知される信号波形(第1図(C
)参照)かシャープとなり検出精度か向上する。但し、
小さくし過ぎると、光量か不足したり、ピンホールの回
折によりビーム拡かり角か大きくなったりして検出精度
か低下したり、検出不能となる。このため、ビンポール
6aの大きさは、光源である発光素子4の発光部の大き
さや輝度とマツチングして決める必要かある。また、6
bはウェハエツジ等からの散乱光を遮断するためのピン
ホールである。
3 is a handle for loading and unloading the wafer 1, 4 is a light emitting element such as a semiconductor laser, and 5 is a light receiving element such as a photo I-sensor. The beam from the light-emitting element 4 is detected by the light-receiving element if the beam is not blocked by the wafer 1. 6a is the beam
It is a bin pole to make the desired diameter. The smaller the beam diameter, the more the detected signal waveform (Figure 1 (C)
)) becomes sharper and the detection accuracy improves. however,
If it is made too small, the amount of light may be insufficient or the beam divergence angle may become large due to diffraction from the pinhole, resulting in a decrease in detection accuracy or inability to detect. Therefore, it is necessary to determine the size of the bin pole 6a by matching it with the size and brightness of the light emitting part of the light emitting element 4, which is the light source. Also, 6
b is a pinhole for blocking scattered light from the wafer edge and the like.

ここで、発光素子4、受光素子5およびビンホル6a 
 6bからなる検出系9は、第1図(blの如く、ハン
ド3の搬出入方向において、収納されているウェハ平面
に対しθ傾りて配置しである。キャリア2内におけるウ
ェハ1の傾きαがα1〈20′程度であれは、傾きθは
20′くθ<]°(時別回りを正)でよい。ハント3は
、ウェハ搬出入の際、検出系とメカ的に干渉しないよう
に、第1図(a)に示す如く、検出位置Hに列し文たり
ずらした位置にある。
Here, the light emitting element 4, the light receiving element 5 and the bottle hole 6a
As shown in FIG. If α1 is about 20', the slope θ should be 20' and θ<]° (hourly rotation is positive).The Hunt 3 is designed to avoid mechanical interference with the detection system when loading and unloading wafers. , as shown in FIG. 1(a), is located at a position aligned with and shifted from the detection position H.

今、エレベータ7から各ウェハA−Eまての高さをax
e(ウェハ下面まで)、基準位置からのエレベータの駆
動量をX、検出位置Hの高さをb、そして検出位置Hと
ハンド3の上面との距離をぶとする。
Now, the height from elevator 7 to each wafer A-E is ax
e (to the bottom surface of the wafer), the driving amount of the elevator from the reference position is X, the height of the detection position H is b, and the distance between the detection position H and the top surface of the hand 3 is expressed as x.

エレベータ7を上方から下方へ駆動する時、ますウェハ
Aの下面がビームLを遮断し、センサ5の受光光量は小
さくなる。さらに、エレヘータフの駆動に伴い、ウェハ
Aの上面がビームを通過するとき同受光光量は増加して
もとのレベルまで戻る。以下、ウェハB−Fについて同
様に受光光量か増減する。エレヘータフの駆動量Xに対
する検出位置Hの相対高さ(h−x)を横軸に出力信号
を表したものか第1図(C)である。
When the elevator 7 is driven from above to below, the lower surface of the wafer A blocks the beam L, and the amount of light received by the sensor 5 becomes smaller. Furthermore, as the electric heater is driven, when the upper surface of the wafer A passes through the beam, the amount of received light increases and returns to the original level. Thereafter, the amount of received light is increased or decreased in the same manner for wafers B to F. FIG. 1(C) shows the output signal with the horizontal axis representing the relative height (h-x) of the detection position H with respect to the drive amount X of the electric motor.

第1図の装置においては、前述の如く、ウェハ1の傾き
±αに対しそれ以上ビームLを傾けていることにより、
必ずP側(ハント搬出入側)のエツジを検出しており、
加えてビームLはウニへ下面で反射することはなく、ま
たウェハ上面で反射してもθ±2α傾いた方向に進んで
ビンポール61〕で遮断される。したがフて、第1図(
C)の出力信号に刻し一定のスライスレベルを設定する
ことにより、ウニへの位置a、b、・・・・、eを定め
ることかできる。ここで、a〜eはエレベータ」二面か
らウニへ下面までの高さを表している。これらの高さの
データをメモリ等に記憶しておき、任意のウェハ、例え
はウェハAを搬出入する場合、基準位置からb =a−
fl (h−a=x、flは検出位置とハント上面との
V巨1Il(+)たりエレベータを駆動し、ハンド上面
とウニへ下面の高さ合わせを行なう。
In the apparatus shown in FIG. 1, as mentioned above, by tilting the beam L more than the tilt of the wafer 1 ±α,
The edge on the P side (hunt loading/unloading side) is always detected,
In addition, the beam L is not reflected to the sea urchin from the lower surface, and even if it is reflected from the upper surface of the wafer, it proceeds in a direction inclined by θ±2α and is blocked by the bin pole 61. However, as shown in Figure 1 (
By setting a constant slice level to the output signal of C), the positions a, b, . . . , e to the sea urchin can be determined. Here, a to e represent the heights from the second surface of the elevator to the bottom surface of the elevator. These height data are stored in a memory or the like, and when loading or unloading an arbitrary wafer, for example wafer A, from the reference position b = a-
fl (h-a=x, fl is a V large 1Il (+) between the detection position and the top of the hand, or drives an elevator to align the heights of the top of the hand and the bottom of the hand to the sea urchin.

以上のようにウェハ1に列し検出ビームLを傾Gづるこ
とにより次の効果が得られた。
By aligning the detection beam L with the wafer 1 and tilting the detection beam L as described above, the following effects were obtained.

(1)ウェハかキャリア2中で傾いてもウェハ表面によ
る反射等の影響を受けない。
(1) Even if the wafer is tilted in the carrier 2, it is not affected by reflection from the wafer surface.

(2)ハント側のウェハエツジと反対側のウェハエツジ
とを別々に検出てきる。
(2) The wafer edge on the hunt side and the wafer edge on the opposite side are detected separately.

(3)これらにより、従来より検出精度の向上か実現さ
れた。
(3) As a result, detection accuracy has been improved compared to the conventional method.

[他の実施例] 第3図(a)は、本発明の他の実施例を示す。同図(b
)は同図(a)を左側面から見た図である。この装置は
、前記第1の実施例におりると同様の検出系を9Aと9
Bとの2系列設り、図示のように配置したものである。
[Other Embodiments] FIG. 3(a) shows another embodiment of the present invention. The same figure (b
) is a view of the same figure (a) seen from the left side. This device uses detection systems 9A and 9 similar to those in the first embodiment.
There are two lines, B and B, arranged as shown in the figure.

検出系9Aは第1の実施例にて述へた如くウェハA−E
の下面をハント搬出入側(P側)で検出し、検出系9B
は同様の方法てウェハA〜Eの上面を同しP側て検出す
る。このように配置したことによりウェハかキャリア2
のウェハ保持溝8(8a〜8e)に段違いに(例えば図
中右側の保持溝8aと左側の保持溝8bとに跨がって)
収納されていても検出てき、ハンド3か1般出入するス
ペースが確実に検出てきる。このようにウェハの検出位
置とハンド3の搬出入する位置か違うような動作も、エ
レベータの上下機構の停止精度が十分みあっていれは成
り立つ。
The detection system 9A detects wafers A-E as described in the first embodiment.
The lower surface of the hunt is detected on the hunt loading/unloading side (P side), and the detection system 9B
The upper surfaces of wafers A to E are detected on the P side in a similar manner. With this arrangement, the wafer or carrier 2
wafer holding grooves 8 (8a to 8e) at different levels (for example, across the holding groove 8a on the right side and the holding groove 8b on the left side in the figure).
Even if it is stored, it will be detected, and the space for hand 3 or 1 to enter and exit will be reliably detected. In this way, an operation in which the wafer detection position and the hand 3 loading/unloading position are different can be achieved if the stopping accuracy of the elevator vertical mechanism is sufficiently matched.

[発明の効果] 以上説明したように、本発明によれば、薄板に対し検出
ビームを傾けたことにより、薄板かキャリア内で傾いて
もその影響を受すす、また、薄板の搬出入側のエツジと
反対側のエツジとを別々に検出できる。これにより、検
出精度の向上か実現された。
[Effects of the Invention] As explained above, according to the present invention, since the detection beam is tilted with respect to the thin plate, even if the thin plate is tilted in the carrier, it will not be affected by the tilt, and the thin plate will not be affected by the tilting in the carrier. Edges and opposite edges can be detected separately. This has resulted in improved detection accuracy.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は、本発明の第1の実施例に係るウェハ搬
出入装置の概略構成図、 第1図(b)は、第1図(a)の装置の要部拡大説明図
、 第1図(C)は、’f(% 1図(a)の装置におりる
ウニへ位首と光ビーム検出出力との関係を表わすグラ乙 第2図(a)〜(C)は、従来例のそれぞれ第1図(a
)〜(C)に相当する図、そして 第3図(a)および(b)は、本発明の第2の実施例に
係るウェハ搬出入装置の概略構成を示す側面図および正
面図である。 AB 2、キャリア 3 ハンド 4、発光素子 5 受光素子 6a    6b 7・エレベ a8b   9A ビンホール タ ・・ ・・   8 e 9B 検出系 ウェハ ウェハ保持溝 1 つ
FIG. 1(a) is a schematic configuration diagram of a wafer loading/unloading device according to the first embodiment of the present invention, FIG. 1(b) is an enlarged explanatory diagram of the main parts of the device of FIG. 1(a), Figure 1 (C) shows the relationship between the position of the sea urchin in the device shown in Figure 1 (a) and the light beam detection output. Figure 1 (a) of each of the conventional examples
) to (C), and FIGS. 3(a) and 3(b) are a side view and a front view showing a schematic configuration of a wafer loading/unloading device according to a second embodiment of the present invention. AB 2, carrier 3 Hand 4, light emitting element 5 Light receiving element 6a 6b 7・Elevator a8b 9A Bin halter...8 e 9B Detection system wafer 1 wafer holding groove

Claims (2)

【特許請求の範囲】[Claims] (1)複数個の薄板を互いの平面を対向させかつ所定の
間隙をおいて保持可能なキャリアに対して薄板を収納お
よび/または取出する薄板搬出入手段と、 前記薄板の平面に対して傾斜するが前記間隙を通過し得
る方向に光ビームを照射する発光手段およびこの発光手
段から前記間隙を通過して来た光を検出する受光手段を
有し、取り出すべき薄板の位置および/または薄板を収
納すべきキャリア内の位置における他の薄板の有無を非
接触で検出する検出手段と を具備することを特徴とする薄板搬出入装置。
(1) A thin plate loading/unloading means for storing and/or taking out a plurality of thin plates from a carrier capable of holding a plurality of thin plates with their planes facing each other with a predetermined gap between them; The light emitting means irradiates a light beam in a direction that allows the light beam to pass through the gap, and the light receiving means detects the light that has passed through the gap from the light emitting means. 1. A thin plate loading/unloading device comprising: detection means for non-contact detecting the presence or absence of another thin plate at a position within a carrier to be stored.
(2)前記検出手段が、前記薄板の前記搬出入手段側の
エッジまたは反対側のエッジを検出するものであること
を特徴とする請求項1記載の薄板搬出入装置。
(2) The thin plate loading/unloading device according to claim 1, wherein the detection means detects an edge of the thin plate on the side of the loading/unloading means or an edge on the opposite side.
JP12918190A 1990-05-21 1990-05-21 Thin plate detector Expired - Fee Related JP2826763B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12918190A JP2826763B2 (en) 1990-05-21 1990-05-21 Thin plate detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12918190A JP2826763B2 (en) 1990-05-21 1990-05-21 Thin plate detector

Publications (2)

Publication Number Publication Date
JPH0425151A true JPH0425151A (en) 1992-01-28
JP2826763B2 JP2826763B2 (en) 1998-11-18

Family

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Application Number Title Priority Date Filing Date
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Country Link
JP (1) JP2826763B2 (en)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5091263A (en) * 1973-12-12 1975-07-21
JPS55117986A (en) * 1979-03-06 1980-09-10 Mitsubishi Electric Corp Pressure release time measuring unit
JPS58184841U (en) * 1982-06-04 1983-12-08 株式会社日立製作所 Wafer transfer device
JPS59113638A (en) * 1982-12-20 1984-06-30 Matsushita Electric Ind Co Ltd Feeder for semiconductor wafer
JPS6085536A (en) * 1983-10-17 1985-05-15 Hitachi Ltd Wafer positioning device
JPS6197587A (en) * 1984-10-19 1986-05-16 Omron Tateisi Electronics Co Photoelectric switch for detection of fine object
JPS6197578A (en) * 1984-10-19 1986-05-16 Toshiba Corp Measuring pulse processor
JPS61112640U (en) * 1984-12-26 1986-07-16
JPS63289828A (en) * 1987-05-21 1988-11-28 Tokyo Electron Ltd Wafer cassette
JPH02198152A (en) * 1989-01-27 1990-08-06 Hitachi Electron Eng Co Ltd System for detecting wafer in cassette
JPH03280447A (en) * 1990-03-28 1991-12-11 Tel Varian Ltd Detection of substrate

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5091263A (en) * 1973-12-12 1975-07-21
JPS55117986A (en) * 1979-03-06 1980-09-10 Mitsubishi Electric Corp Pressure release time measuring unit
JPS58184841U (en) * 1982-06-04 1983-12-08 株式会社日立製作所 Wafer transfer device
JPS59113638A (en) * 1982-12-20 1984-06-30 Matsushita Electric Ind Co Ltd Feeder for semiconductor wafer
JPS6085536A (en) * 1983-10-17 1985-05-15 Hitachi Ltd Wafer positioning device
JPS6197587A (en) * 1984-10-19 1986-05-16 Omron Tateisi Electronics Co Photoelectric switch for detection of fine object
JPS6197578A (en) * 1984-10-19 1986-05-16 Toshiba Corp Measuring pulse processor
JPS61112640U (en) * 1984-12-26 1986-07-16
JPS63289828A (en) * 1987-05-21 1988-11-28 Tokyo Electron Ltd Wafer cassette
JPH02198152A (en) * 1989-01-27 1990-08-06 Hitachi Electron Eng Co Ltd System for detecting wafer in cassette
JPH03280447A (en) * 1990-03-28 1991-12-11 Tel Varian Ltd Detection of substrate

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