JPH0424940A - Measuring method for rf output - Google Patents

Abstract

PURPOSE:To simply and easily measure the degree of a damage due to an effective RF power when a semiconductor material is exposed with RF by applying an RF power to an organic polymer film on a substrate, decomposing the surface of the film with argon ions to a carbonized layer, applying a voltage to the surface, and measuring a current conducting amount. CONSTITUTION:A substrate 1 is entirely coated with a polyimide film 2 as an organic polymer film, and dried. Then, it is RF-processed to attack Ar ions 3 to the substrate 1. The substrate 1 is set at the center of a chamber 11, the gas is introduced from a gas inlet 15, an exhaust port 16 is regulated to hold the degree of vacuum in the chamber 11. An RF output is applied from a high frequency power source 13 and a bias voltage is applied from a bias power source 14 to a counter electrode 12 above the substrate 1 to perform the RF process. The film surface on the substrate 1 is impinged with Ar ions, O, N, H atoms are emitted from the vicinity of the surface, the surface becomes carbon-rich to form a carbonized layer 4. A probe 7 is brought into contact with the layer 4 to measure its current conducting amount.

Description

DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a processing method using RF specific output.

The object of the present invention is to obtain a simple and easy method for measuring the degree of damage caused by the effective RF power when a semiconductor material is exposed to RF specific power.

RF specific power is applied to the organic polymer film coated on the substrate, the surface of the polymer film is decomposed by argon ions to form a carbonized layer, and a voltage is applied to the surface of the carbonized layer to determine the amount of current flowing through the carbonized layer. Configure to measure.

[Industrial application field]

The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of processing a semiconductor material using RF specific power.

In recent years, argon (
^r) Semiconductor materials are often processed using RF specific output by introducing gas or the like.

[Conventional technology]

FIG. 5 is a schematic sectional view of a conventional example in the order of steps.

In the figure, 17 is a silicon (Si) substrate, 18 is a silicon dioxide (SiOz) film, 19 is an Ar ion, 20 is an aluminum (Al) electrode, 21 is an ammeter, 22 is a voltmeter, and 23 is a measurement power source. .

When processing a semiconductor material using RF specific output by introducing Ar gas, etc., conventional methods have been used to easily and easily evaluate the effective RF specific output during processing of the semiconductor material and the effects of damage on the semiconductor material itself. It was not possible to measure it in any way.

As a very indirect method, as shown in FIG. 5(a), a Si substrate 17 is oxidized and a thin Sing film 18 of several hundred layers is coated on the surface of the substrate.

Next, as shown in FIG. 5(b), the Si substrate 17 is set in a processing device, Ar gas is introduced into the processing device, and processing is performed using a predetermined RF specific output to generate ^r ions on one surface. Hit it with.

After the treatment, as shown in FIG. 5(C), A1. A film is deposited and patterned to form an electrode 20 for measuring characteristics, thereby creating a MOS diode.

Subsequently, the MOS diode was subjected to annealing treatment such as BT treatment, and the C-■ characteristic of the 2M0S diode was measured as shown in FIG. 5(d).
The degree of damage was assessed.

[Problem to be solved by the invention]

The above method is very time consuming as well.

It is difficult to incorporate and manage the general process.

Furthermore, it is easily influenced by various manufacturing conditions and fluctuations in other process conditions, and lacks reliability.

In view of two or more points, the present invention is provided for the purpose of obtaining a method for simply and easily measuring the degree of damage by effective RF power when a semiconductor material is exposed to RF.

(Means for Solving the Problems) FIG. 1 is an explanatory diagram of the principle of the present invention, and FIG. 2 is a schematic sectional view of an embodiment of the present invention in the order of steps.

In the figure, 1 is a substrate, 2 is an organic polymer film, 3 is an Ar ion, 4 is a carbonized layer, and 5 is carbon.

6 is the emitted atom, 7 is the probe, 8 is the power supply, 9 is the ammeter,
10 is a voltmeter.

Polyimide-based organic polymer films are often used as glabellar insulating films for multilayer wiring, and representative examples include wholly aromatic polyimide resins and polyimide resins having siloxane bonds in part of the diamine.

All of them are carbon (C), oxygen (0), and nitrogen (N).

It is composed of elements such as hydrogen (H) or silicon (Si), and when its surface is subjected to RF treatment, the surface of the polyimide film, which is the organic polymer film 2, is exposed to Ar ions as shown in FIG. When you get hit at 3.

As shown in FIG. 1(b), O, N, H atoms, etc. near the surface of the organic polymer film 2 jump out as released atoms 6, and the surface of the organic polymer film 2 becomes rich in carbon. It changes into a carbonized layer 4.

The amount of current applied to the carbonized layer 4 changes depending on the degree of this alteration, and the value is proportional to the degree of damage to the semiconductor substrate.

As a result, the present invention makes it possible to directly, simply and easily measure the influence of RF specific output on semiconductor materials, and also to measure the degree of damage with high precision (in real time).

That is, the object of the present invention is to coat a substrate 1 with an organic polymer film 2, as shown in FIG. 2(a).

As shown in FIG. 2(b), RF specific power is applied to the organic polymer film 2 on the surface of the substrate 1, and the surface of the polymer film 2 is decomposed by argon ions 3 to form a carbonized layer 4.

As shown in FIG. 2(C), this is achieved by applying a voltage to the surface of the carbonized layer 4 and measuring the amount of current flowing through the carbonized layer 4.

[Function] As in the present invention, an organic polymer film such as a polyimide film has R
During the F treatment, zero atoms, N atoms, or H atoms are released from the surface of the organic polymer film by being bombarded with ions and decomposed, making the surface of the organic polymer film carbon-rich and forming a conductive carbonized layer. To achieve this, a current flows. The magnitude of this current value is proportional to the degree of damage.

By measuring the current value of the carbonized layer on the surface of the organic polymer film on the substrate after RF processing, the actual RF specific output power for the semiconductor material and the degree of damage to the semiconductor substrate can be directly determined. can be measured in real time.

〔Example〕

FIG. 2 is a schematic cross-sectional view of an embodiment of the present invention in the order of steps.

FIG. 3 is a diagram showing the relationship between RF processing conditions and energization amount.

FIG. 4 is a schematic diagram of the RF processing device.

In the figure, 1 is a substrate, 2 is an organic polymer film, 3 is an Ar ion, 4 is a carbonized layer, and 5 is carbon.

6 is the emitted atom, 7 is the probe, 8 is the power supply, 9 is the ammeter,
10 is a voltmeter, 11 is a chamber, and 12 is a counter electrode.

13 is a high frequency power source, 14 is a bias power source, 15 is a gas inlet, and 16 is an exhaust port.

As shown in FIG. 2(a), for example, a polyimide film 2 as an organic polymer film is coated on the entire surface of the St substrate 1 to a thickness of 2 to 3 μm, and then dried. Various materials such as a glass plate can be used as the substrate 1.

As shown in FIG. 2(b), RF processing is performed.

The polyimide film on the substrate 1 is attacked with Ar ions 3.

A schematic diagram of the apparatus used for RF processing is shown in FIG. The substrate 1 is set in the center of the chamber 11.

Ar gas is introduced from the gas inlet 15, and the exhaust port 16 is adjusted to maintain the degree of vacuum in the chamber 11 at 7 mm Torr.

A small RF output of 13.56 MHz is applied from the high frequency power supply 13, and a bias voltage of -600V is applied to the substrate 1 from the bias power supply 14.
RF processing is performed by applying it to the upper counter electrode 12.

The surface of the polyimide film on the substrate l is struck by Ar ions and
O, N, and H atoms are released from near the surface, and the two surfaces become carbon-rich, forming a carbonized layer 4.

As shown in FIG. 2(C), a probe 7 is applied to the surface of the carbonized layer 4 to measure the amount of current applied thereto.

The normal processing conditions for RF using the apparatus shown in Figure 4 are: Gauge gas pressure is 7 mm + Torr + RF bias voltage is -
600V, RF processing time is 75 seconds.

FIG. 3 shows the measurement of the amount of current applied to carbonized N4 on the surface of the polyimide film while changing the RF processing conditions. From this, the RF small output power can be understood.

Figure 3(a) shows the dependence of RF processing time.
The amount of current applied was measured while changing the processing time from 38 seconds to 150 seconds.

Moreover, FIG. 3(b) shows the dependence on the RF bias voltage, and the processing time is set to be constant at 150 seconds.

The amount of current was measured by varying the bias voltage from -40V to -1800V.

〔Effect of the invention〕

As explained above, by measuring the current value of the carbonized layer on which the surface of the organic polymer film on the substrate has been altered after RF treatment, it is possible to determine the magnitude of the effective RF output to the semiconductor material and the degree of damage to the semiconductor substrate. Size can be measured directly in real time.

According to the present invention, device management and manufacturing conditions can be determined and managed reliably, which greatly contributes to improving the quality of semiconductor devices and establishing reliability.

[Brief explanation of drawings]

FIG. 1 is a diagram explaining the principle of the present invention. FIG. 2 is a schematic cross-sectional view of an embodiment of the present invention in the order of steps. Figure 3 shows the RF processing conditions and amount of current. Figure 4 shows the RF processing device. Figure 5 is a schematic cross-sectional view of the conventional process order. It is. In fig. 1 is the board. 3 is Ar ion. 5 is carbon. 7 is a probe. 9 is an ammeter. 11 is a chamber 13 is a high frequency power supply 15 is a gas inlet. 2 is an organic polymer film. 4 is carbonized layer. 6 is the emitted atom. 8 is the power supply. 10 is a voltmeter 12 is a counter electrode. 14 is bias power supply 16 is the exhaust port RF processing support Rule 40 (d) Sasa! X: For example, one step towards process n. 〃

Claims (1)

[Claims] RF output is applied to the organic polymer film (2) coated on the substrate (1), and the surface of the polymer film (2) is decomposed by argon ions (Ar^+) (3). A method for measuring RF output, comprising: forming a carbonized layer (4), applying a voltage to the surface of the carbonized layer (4), and measuring the amount of current flowing through the carbonized layer (4).