JPH0424934A - Wire bonding apparatus and method thereof - Google Patents

Wire bonding apparatus and method thereof

Info

Publication number
JPH0424934A
JPH0424934A JP2124169A JP12416990A JPH0424934A JP H0424934 A JPH0424934 A JP H0424934A JP 2124169 A JP2124169 A JP 2124169A JP 12416990 A JP12416990 A JP 12416990A JP H0424934 A JPH0424934 A JP H0424934A
Authority
JP
Japan
Prior art keywords
bonding
arm
capillary
ball
pressurizing force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2124169A
Other languages
Japanese (ja)
Other versions
JP2657709B2 (en
Inventor
Satokura Torigoe
鳥越 聡蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaijo Corp
Original Assignee
Kaijo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaijo Corp filed Critical Kaijo Corp
Priority to JP2124169A priority Critical patent/JP2657709B2/en
Publication of JPH0424934A publication Critical patent/JPH0424934A/en
Application granted granted Critical
Publication of JP2657709B2 publication Critical patent/JP2657709B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/786Means for supplying the connector to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/789Means for monitoring the connection process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/8212Aligning
    • H01L2224/82148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/82169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
    • H01L2224/8218Translational movements
    • H01L2224/82181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain an ideal ball press-bonding shape by providing a bonding arm provided at an end with a capillary, a driving arm for vertically oscillating the arm, and pressurizing force varying means for varying pressurized force at the time of bonding, and varying the pressure to be applied to the end of the capillary. CONSTITUTION:A ball 43a formed at the end of a wire 43 is sufficiently absorbed by a capillary 8 by a tension loading unit to approach a pad 45 arranged on an IC chip 44. In this case, only a driving arm 1 is continuously rotated in a direction Z by a vertically oscillating device to separate contacts 4 and 4', and the positional relationship between the arm 1 and a bonding arm 2 is deviated. The deviation is detected by a detector 9, and the apparatus is transferred by the detection output. Thereafter, voice coil units 5, 5' of pressurizing means are excited to generate a pressurizing force. The pressurizing force in the direction (b) is obtained by applying an ultrasonic wave in the direction of an arrow (a), pressurizing force in the direction of an arrow (b) and overheating means.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は半導体集積回路(IC)や大規模集積回路(L
SI)の半導体部品の組立を行う半導体組立装置に関し
、特に超音波熱圧着方式によるワイヤボンディング装置
並びにその方法に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is applicable to semiconductor integrated circuits (IC) and large-scale integrated circuits (L
The present invention relates to a semiconductor assembly apparatus for assembling semiconductor components (SI), and particularly relates to a wire bonding apparatus and method using an ultrasonic thermocompression method.

[背景技術] 従来、この種のワイヤボンディング装置としては第5図
に示す装置がある。
[Background Art] Conventionally, as this type of wire bonding apparatus, there is an apparatus shown in FIG. 5.

第5図において、超音波振動子3oはX方向及びY方向
に移動可能なXYテーブル上のフレーム31に設けられ
たビン32を介して揺動可能に支持される。この超音波
振動子3oの一端に取付けられているボンディングアー
ム33の先端にキャピラリー42が取付けられている。
In FIG. 5, the ultrasonic transducer 3o is swingably supported via a bin 32 provided on a frame 31 on an XY table movable in the X and Y directions. A capillary 42 is attached to the tip of a bonding arm 33 attached to one end of the ultrasonic transducer 3o.

また、超音波振動子3oの他端にはレバー34が設けら
れており、該レバー34の端部にはローラ35が設けら
れている。ローラ35はカム36のカム面と接触するよ
うにバネ37により反時計方向のモーメントを受けてお
り、パルスモータ等の駆動手段(図示せず)によりカム
36が回転されて該カム36の形状によりキャピラリ4
2が昇降できる構成となっている。また、ワイヤ43は
リーノ138に巻回されており、また、クランプ40は
5イヤ43を握持して切断するものであり、39にボー
ルを引上げてキャピラリ42の下端に接触才せるための
ハーフクランプである。また、41G二ボール43aを
形成するためのトーチであり、」直軸の回りを回動でき
るように構成されている。
Further, a lever 34 is provided at the other end of the ultrasonic vibrator 3o, and a roller 35 is provided at the end of the lever 34. The roller 35 receives a counterclockwise moment from a spring 37 so as to come into contact with the cam surface of the cam 36, and the cam 36 is rotated by a driving means (not shown) such as a pulse motor, and the shape of the cam 36 is rotated. capillary 4
2 can be raised and lowered. Further, the wire 43 is wound around the liner 138, and the clamp 40 is used to grasp and cut the five-ear wire 43, and the wire 43 is used to grasp and cut the five-ear wire 43, and a half wire 43 is used to pull up the ball and bring it into contact with the lower end of the capillary 42. It's a clamp. It is also a torch for forming the 41G two-ball 43a, and is configured to be rotatable around a vertical axis.

上記装置を用いてボンディング作業を行う手月について
説明する。
The procedure for performing bonding work using the above device will be explained.

まず、フレーム31をX、Y方向に移動さセキャビラリ
42をトーチ41の上方に位置させてキャピラリ42の
先端より所定の長さワイN43を伸長させ、このワイヤ
43の先端にトーチ41によりボール43aを形成する
。次に、穿6図(a)に示すようにキャピラリ42壱I
Cチツプ(半導体)44上のパッド4Sの直上の高さに
移動させて位置させる。次に、第6区(b)に示すよう
にキャピラリー42を等速円違動により下降させてボー
ル43aをパッド45に衝突させ、更にボンディング加
圧を加えて第6図(C)に示す所定の厚さZとなるまで
ボール43aを押しつぶす。この押しつぶしと同時に超
音波振動又は過熱を与える。その後、第6図(d)に示
すようにキャピラリ42を上昇及び水平方向に移動させ
、ボンディングすべきリート46の上方に位置させ、二
点gM 線で示すようにキャピラリ42を下降させて下
端部によりワイヤ43の一部を押しつぶし、扁平部を形
成して超音波若しくは過熱を併用してリード46に固定
させ、ワイヤ43を引いて扁平部の端から切断し、その
後キャピラリ42を上昇させて一回のボンディングを終
了する。その後ワイヤ43の先端にトーチ41によりボ
ール43aを形成して第6図(a)の状態に戻り、次の
ボンディングを行う。
First, the frame 31 is moved in the X and Y directions, the secondary capillary 42 is positioned above the torch 41, the wire N43 is extended a predetermined length from the tip of the capillary 42, and the ball 43a is attached to the tip of the wire 43 using the torch 41. Form. Next, as shown in Figure 6(a), capillary 42 I
It is moved and positioned at a height directly above the pad 4S on the C chip (semiconductor) 44. Next, as shown in Section 6 (b), the capillary 42 is lowered by uniform circular movement to cause the ball 43a to collide with the pad 45, and bonding pressure is further applied to the predetermined position shown in FIG. 6 (C). The ball 43a is crushed until it has a thickness Z. At the same time as this crushing, ultrasonic vibration or superheating is applied. Thereafter, the capillary 42 is moved upward and horizontally as shown in FIG. A part of the wire 43 is crushed to form a flat part, which is fixed to the lead 46 by using ultrasonic waves or superheating.The wire 43 is pulled and cut from the end of the flat part, and then the capillary 42 is raised to form a flat part. Finish the bonding. Thereafter, a ball 43a is formed at the tip of the wire 43 by the torch 41, and the state shown in FIG. 6(a) is returned to perform the next bonding.

[発明が解決しようとする課題] しかしながら、最近のように多ピン化により隣接するパ
ッド間の間隔の縮小化や小パッド化が進む状況下では安
定したボール圧着形状やボール圧着形状の均一化が望ま
れている。また、従来、品質や信頼性の向上の目的でパ
ッド下面のクラック(亀裂等)に対する配慮のためボー
ルがパッドへ衝突した際の衝撃力の緩和やその後の加変
側を防止する等の改善を行うことにより品質、信頼性の
向上を図る努力がなされている。しかしながら、上記衝
撃力の低減がなされた結果、衝突時におけるボールの変
形量が以前よりも少なくなるため、以前と同様のボール
圧着面積を得て充分な接合強度を得るためにはより以上
の超音波をEl加する必要がある。
[Problems to be Solved by the Invention] However, in recent years, as the number of pins increases, the distance between adjacent pads is becoming smaller and the pads are becoming smaller, it is difficult to maintain a stable ball crimping shape or making the ball crimping shape uniform. desired. In addition, in order to improve quality and reliability, improvements have been made to reduce the impact force when the ball collides with the pad and to prevent the subsequent side change in order to prevent cracks (cracks, etc.) on the underside of the pad. Efforts are being made to improve quality and reliability by doing so. However, as a result of the reduction in impact force mentioned above, the amount of deformation of the ball at the time of collision is smaller than before, so in order to obtain the same ball crimping area and sufficient joint strength as before, it is necessary to It is necessary to add El sound waves.

上記のような背景の中で多ビン化によるボール圧着径の
安定化、均一化を達成させるためには、従来のワイヤボ
ンディング装置では以下に示すような欠点がある。
Under the above background, in order to achieve stabilization and uniformity of ball crimping diameter by increasing the number of bins, conventional wire bonding equipment has the following drawbacks.

即ち、 第1に、ボール43aとパッド45との接合強度は、そ
の接合面積に大きく影響される。したがって、以前と同
様な接合面積を得ようとすると、超音波の負担が大きい
分だけ第7図(b−1)で示す矢印イ方向へ長い楕円の
ような圧着形状となり、パッド45上の外枠45°を破
壊する恐れがある。
That is, firstly, the bonding strength between the ball 43a and the pad 45 is greatly influenced by the bonding area. Therefore, if an attempt is made to obtain the same bonding area as before, the crimping shape will be an ellipse that is longer in the direction of arrow A shown in FIG. There is a risk of destroying the 45° frame.

第2に、上記のような楕円形状のボール圧着升シ状では
、ボンディング装置自身の位置決め精度により位置づれ
が発生した場合、第7図(b−2)のようにパッド45
上からはみ出す恐れかある。
Second, in the case of the elliptical ball crimping square shape as described above, if positional deviation occurs due to the positioning accuracy of the bonding device itself, the pad 45 as shown in FIG. 7(b-2)
There is a fear that it will protrude from the top.

特に多ピン化ICチップのような小パッドには発生し易
い。
This problem is particularly likely to occur on small pads such as IC chips with a large number of pins.

そこで、本発明は上記従来技術の欠、占に鑑みなされた
もので、第7区(a−1)に示すような理想的なボール
圧@形状を得ることのできるワイヤボンディング装置並
びにその方法を提供することを目的とする。
Therefore, the present invention has been made in view of the deficiencies and limitations of the prior art, and provides a wire bonding device and method capable of obtaining the ideal ball pressure @ shape as shown in Section 7 (a-1). The purpose is to provide.

[課題を解決するための手段] 本発明は、先端にキャピラリが設けられたボンディング
アームと、該ボンディングアームを上下に揺動させる駆
動アームと、前言己ボンディングアームのボンディング
時における加圧力を変動させる加圧力変動手段とを備え
、前記加圧力変動手段によりボンディング時に前記キャ
ピラリ先端に加えられる加圧力を変動可能に構成したも
のである。
[Means for Solving the Problems] The present invention includes a bonding arm provided with a capillary at its tip, a drive arm that swings the bonding arm up and down, and a pressure force applied to the bonding arm during bonding. The pressurizing force varying means is configured to be able to vary the pressurizing force applied to the tip of the capillary during bonding by the pressurizing force varying means.

また、本発明は、ボンディングアーム先端に設けられた
キャピラリに加えられる加圧力をボンディング時に加圧
力変動手段により変動させて印加するようにしたもので
ある。
Further, in the present invention, the pressure applied to the capillary provided at the tip of the bonding arm is applied while being varied by the pressure varying means during bonding.

[実施例] 次に本発明の実施例について図面を用いて詳細に説明す
る。
[Example] Next, an example of the present invention will be described in detail using the drawings.

第1図は本発明に係るワイヤボンディング装置のボンデ
ィングヘッドの構成を示す図である。なお、従来の装置
と同一の構成及び機能を有するものについては同じ符合
を用いて説明する。
FIG. 1 is a diagram showing the configuration of a bonding head of a wire bonding apparatus according to the present invention. Note that devices having the same configuration and functions as conventional devices will be described using the same reference numerals.

[N第1図において、駆動アーム1及びボンディングア
ーム2は軸3により独立して揺動自在に軸支されている
。このボンディングアーム2は先端にボンディング接続
を行うキャピラリ8有する超音波ホーン7を支持部材7
aを介して保持している。前記軸3の超音波ホーン7の
後端面近傍には接点4及び4°が前記駆動アーム1とボ
ンディングアーム2に対向して設けられている。また、
前記駆動アーム1とボンディングアーム2には一対のソ
レノイドユニット6及び6゛が対向して設けられ、この
ソレノイドユニット6及び6が図示せぬ制御回路の指令
により励磁されると互いに吸着され、ボンディングアー
ム2は軸3を支点として第1図の矢印2方向への力が作
用する。
[N In FIG. 1, the drive arm 1 and the bonding arm 2 are independently pivotably supported by a shaft 3. This bonding arm 2 has an ultrasonic horn 7 having a capillary 8 for bonding connection at its tip and a supporting member 7.
It is held through a. Contact points 4 and 4° are provided near the rear end surface of the ultrasonic horn 7 of the shaft 3 so as to face the drive arm 1 and the bonding arm 2. Also,
A pair of solenoid units 6 and 6' are provided facing each other on the drive arm 1 and bonding arm 2, and when the solenoid units 6 and 6 are energized by a command from a control circuit (not shown), they are attracted to each other, and the bonding arm 2, a force acts in the direction of the arrow 2 in FIG. 1 with the shaft 3 as a fulcrum.

しかし、前記接点4及び4“ とが当接してストッパと
して作用するため駆動アーム1とボンディングアーム2
との位置関係を固定保持する構成となっている。また、
接点4及び4゛とソレノイドユニット6及び6′との間
には加圧手段となるボイスコイルユニット5及び5° 
とが駆動アーム1及びボンディングアーム2に対向して
設けられ、また、前記接点4及び4°が分離すると同時
に駆動アーム1とボンディングアーム2の位置関係の変
位を検出する検出器9及び9゛も対向して設けられてい
る。なお、駆動アーム1を矢印Zz°方向に上下に揺動
させる上下揺動装置は第5図に示すカム36と同じ機能
を有するものが用いられている。この上下揺動装置は上
記カムに代えてリニアモータのような構成のものを用い
てもよい。この上下揺動装置により駆動アーム1を矢印
ZZ°の方向へ揺動運動させることによりボンディング
アーム2も駆動アーム1に連動し揺動運動を行うように
構成されている。
However, since the contacts 4 and 4'' contact each other and act as a stopper, the driving arm 1 and the bonding arm 2
It is configured to maintain a fixed positional relationship with the Also,
Voice coil units 5 and 5°, which serve as pressurizing means, are located between the contacts 4 and 4′ and the solenoid units 6 and 6′.
and detectors 9 and 9' are provided opposite to the drive arm 1 and the bonding arm 2, and detect a displacement in the positional relationship between the drive arm 1 and the bonding arm 2 at the same time that the contacts 4 and 4° are separated. They are placed facing each other. The vertical swinging device for swinging the drive arm 1 up and down in the direction of arrow Zz° has the same function as the cam 36 shown in FIG. 5. This vertical swinging device may be constructed using a linear motor instead of the cam. The bonding arm 2 is configured to swing in conjunction with the drive arm 1 by swinging the drive arm 1 in the direction of the arrow ZZ° by this vertical swinging device.

[11]上記構成を有する装置の作用について以下に説
明する。
[11] The operation of the device having the above configuration will be explained below.

ヤ43の先端に形成されたボール43aは図示されてい
ないテンション負荷装置(第5図のハーフクランプ39
等)によりキャピラリ8に十分に吸着され、かつキャピ
ラリ8の等遠回運動によりICチップ44上に配設され
たパッド45へ接近する。その後、第6図(b)に示す
ようにボール43aとパッド45とが衝突してボール4
3aがキャピラリ8の持っている運動エネルギーにより
多少の変形が生じさせられる。この時、駆動アーム1は
図示されていない上下揺動装置により第1図2方向への
円運動が継続されるが、ボンディングアーム2がキャピ
ラリ8と超音波ホーン7を介してパッド45の上面に接
触して停止状態にあるため、駆動アーム1のみが第1図
のZ方向に継続して回動することにより接点4及び4°
が離間し駆動アーム1とボンディングアーム2の位置関
係が変位する。その変位を検出器9により検出し、その
検出出力により図示せぬ制御回路の指令により上下揺動
装置を停止させる。この停止後、加圧手段であるボイス
コイルユニット5及び5を励磁させることにより第6図
(b)に示す矢印口方向への加圧力を発生させる。この
口方向への加圧力は、矢印イ方向の超音波印加と、矢印
口方向の加圧及び図示せぬ過熱手段とを併用して行い、
これによってパッド45とボール43aとを第6図(C
)に示すような所定の圧着径Y、厚さZになる状態まで
継続させて第1ボンデイングが完了する。
A ball 43a formed at the tip of the gear 43 is connected to a tension loading device (not shown) (half clamp 39 in FIG. 5).
etc.), and is sufficiently attracted to the capillary 8, and approaches the pad 45 disposed on the IC chip 44 by the equicircular movement of the capillary 8. Thereafter, as shown in FIG. 6(b), the ball 43a collides with the pad 45, causing the ball 43a to collide with the pad 45.
3a is slightly deformed due to the kinetic energy possessed by the capillary 8. At this time, the drive arm 1 continues to move circularly in the directions of FIGS. Since the contacts are in a stopped state, only the drive arm 1 continues to rotate in the Z direction in FIG.
are separated, and the positional relationship between the drive arm 1 and the bonding arm 2 is displaced. The displacement is detected by the detector 9, and based on the detection output, the vertical swinging device is stopped by a command from a control circuit (not shown). After this stop, the voice coil units 5 and 5, which are pressurizing means, are excited to generate a pressurizing force in the direction of the arrow shown in FIG. 6(b). This pressurizing force in the direction of the mouth is performed using a combination of ultrasonic application in the direction of arrow A, pressurization in the direction of the arrow mouth, and heating means (not shown).
As a result, the pad 45 and the ball 43a are separated from each other in FIG.
), the first bonding is completed until the predetermined crimp diameter Y and thickness Z are achieved.

[I11]上記のような第1ボンディング時において、
本実施例では所定の周波数の超音波印加と併用してキャ
ピラリ8の先端に圧力を加える際にその加圧力自身をも
変動させることにより第7図(a−1)及び第7図(a
−2)(後者は装置の位置精度がX及びY方向にδのず
れ量がある場合でもパッド45の枠内に接続される。)
に示すようにボール圧着径の超音波の振れ方向への広が
りを抑制すると共に超音波の振れ方向に直交する方向へ
のボール圧着径の広がりを促進させる構成となっている
[I11] During the first bonding as described above,
In this embodiment, when applying pressure to the tip of the capillary 8 in combination with the application of ultrasonic waves of a predetermined frequency, the pressure itself is varied, thereby making it possible to
-2) (The latter is connected within the frame of the pad 45 even if the positional accuracy of the device is shifted by δ in the X and Y directions.)
As shown in the figure, the configuration is such that the spread of the ball crimping diameter in the direction of vibration of the ultrasonic wave is suppressed, and the spread of the ball crimping diameter in the direction orthogonal to the vibration direction of the ultrasonic wave is promoted.

即ち、 第2図及び第3図に示すようにキャピラリ8の先端の超
音波による振幅をa−bとすると、ボール圧看径中心O
からみてa及びbが最大振れ量となる。この超音波振動
と併用する加圧をC−dの間で本実施例では第3図図示
のように超音波の周波数の2倍の周波数で変動させ、か
つ同期させると上記ab点においては加圧力が最低で上
記ボール圧着経中心0で最大となる。つまり、第3図で
みると加圧レベルがdのときは設定加圧αが加えられて
いるが、この加圧レベルdは最低レベル(所定加圧αを
加えた値をいう。)であるため超音波の最大振幅となる
a及びbでは最低レベルdとなり、ボール圧看径中心O
では最大加圧レベルCが印加される。したがって、a及
びbにおいてはキャピラリ8のボール43aを押し、潰
そうとする加圧力をdの値の設定値の調整により制御可
能となり、また、圧着経中心付近におけるボール43a
を押し潰そうとする加圧力もCの設定値の調整により制
御可能となるため、超音波の振幅abをも含めた制御に
より第7図(a−1)のような理想的なボール圧@形状
を得ることが可能となる。
That is, as shown in FIGS. 2 and 3, if the amplitude of the ultrasonic wave at the tip of the capillary 8 is a-b, the ball pressure diameter center O
When viewed from above, a and b are the maximum runout amounts. If the pressure used in conjunction with this ultrasonic vibration is varied between C and d at a frequency twice the frequency of the ultrasonic wave as shown in FIG. The pressure is the lowest and the highest at the ball crimp center 0. In other words, as shown in Fig. 3, when the pressure level is d, the set pressure α is applied, but this pressure level d is the lowest level (the value obtained by adding the predetermined pressure α). Therefore, at a and b where the ultrasonic waves have the maximum amplitude, the lowest level d is reached, and the ball pressure diameter center O
In this case, the maximum pressure level C is applied. Therefore, in a and b, the pressing force that pushes the ball 43a of the capillary 8 and tries to crush it can be controlled by adjusting the set value of d, and the ball 43a near the center of the crimp warp can be controlled.
The pressing force that attempts to crush the ball can also be controlled by adjusting the set value of C, so by controlling the ultrasonic amplitude ab as well, the ideal ball pressure as shown in Figure 7 (a-1) can be achieved. It becomes possible to obtain the shape.

上記のような所定の周波数の超音波印加と加圧力の変動
を行う回路の構成を第4図のブロック図を用いて説明す
る。
The configuration of a circuit that applies ultrasonic waves of a predetermined frequency and varies the applied force as described above will be explained using the block diagram shown in FIG. 4.

図において、発振回路10は所定の周波数の超音波振動
を発生するものであり、この回路内には基準クロック等
の発生回路も備えられている。超音波パワーデータの設
定12は図示せぬ操作手段により作業者が超音波の出力
レベル等の設定を行い、この設定により超音波制御回路
11は発振回路10で発生する超音波を制御して駆動回
路13に出力して超音波ホーン7を駆動する。また、発
振回路10のクロックは逓倍回路14にも送出されてお
り、この逓倍回路14によりスイッチ回路15内のスイ
ッチがオンの時変調回路18に送出される構成となって
いる。このスイッチ回路15はスイッチがオフの時は第
2図及び第3図に示すような力す圧力の変動を行わず、
加圧カ一定でボンディング接続を行うための切換回路で
ある。また、加圧データの設定16は図示せぬ操作手段
により作業者が例えば第3図図示の加圧レベルdの値等
の設定を行うものであり、この加圧データに基づき加圧
制御回路17は加圧力の制御又不ノケ を行い、羊噸回路15のオンの時は変調回路18により
逓倍された所定の周波数でかつ超音波に同期して加圧力
を変動させて駆動回路19を介してボイスコイルユニッ
ト5,5°を駆動させる。
In the figure, an oscillation circuit 10 generates ultrasonic vibrations of a predetermined frequency, and includes a reference clock generation circuit and the like. In the ultrasonic power data setting 12, the operator sets the ultrasonic output level, etc. using an operation means (not shown), and based on this setting, the ultrasonic control circuit 11 controls and drives the ultrasonic waves generated in the oscillation circuit 10. The signal is output to the circuit 13 to drive the ultrasonic horn 7. The clock of the oscillation circuit 10 is also sent to a multiplier circuit 14, and the multiplier circuit 14 sends the clock to the modulation circuit 18 when the switch in the switch circuit 15 is on. When the switch circuit 15 is off, the applied pressure does not fluctuate as shown in FIGS. 2 and 3.
This is a switching circuit for making bonding connections with constant pressure. Further, the pressurization data setting 16 is performed by the operator using an operation means (not shown) to set, for example, the value of the pressurization level d shown in FIG. controls the pressing force or not, and when the oscillation circuit 15 is on, the pressing force is varied at a predetermined frequency multiplied by the modulation circuit 18 and in synchronization with the ultrasonic wave, and is transmitted via the drive circuit 19. Drive voice coil unit 5.5°.

以上のような回路で構成することにより第7図(a −
1)に示すようなボール圧着形状が得られる。
By configuring the circuit as described above, the circuit shown in FIG.
A ball crimped shape as shown in 1) is obtained.

なお、本実施例では第1ボンディング時の実施例で説明
しているが、第2ボンディング点となるノード側におい
ても本実施例の構成を用いて同様なボンディング接続を
行うことができる。また、本実施例では加圧レベルの周
波数を2倍の周波泌で説明しているが、超音波の振幅8
7屯、b点及びそれらの中点で本実施例のような同期が
取れるものであれば2倍の周波数でなくてもよく、逆に
分周して行うように構成してもよい。
Note that although this embodiment has been described using an example at the time of first bonding, a similar bonding connection can be performed using the configuration of this embodiment on the node side serving as a second bonding point. In addition, in this example, the frequency of the pressurization level is explained as twice the frequency, but the amplitude of the ultrasonic wave is 8.
As long as synchronization can be achieved at point 7, point b, and their midpoints as in this embodiment, the frequency need not be doubled; on the contrary, the frequency may be divided.

[発明の効果] 以上説明したように本発明によれば、ボンディング時に
超音波振動と同期させて加圧力の変動制御ができるため
、理想的なボール圧着形状を形成できる効果がある。し
たがって、製品の品質、信頼性の向上を図ることが可能
となる。
[Effects of the Invention] As explained above, according to the present invention, it is possible to control the variation of the pressing force in synchronization with ultrasonic vibration during bonding, and therefore, there is an effect that an ideal ball crimping shape can be formed. Therefore, it is possible to improve the quality and reliability of the product.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係るワイヤボンディング装置の構成を
示す説明図、第2図は超音波振動と加圧力の変動を併用
した場合の説明図、第3図は第2図の超音波及び加圧力
を示す波形図、第4図は本発明の回路の構成を示すブロ
ック図、第5図は従来のワイヤボンディング装置の構成
を示す図、第6図はワイヤボンディングの工程を説明す
る図、第7図はボールの圧着形状を示す図である。 1・・・駆動アーム、2・・・ボンディングアーム、3
・・・軸、4,4° ・・・接点、5,5・・・ボイス
コイルユニット、6,6° ・・・ソレノイドユニット
、7・・・超音波ホーン、8・・・キャピラリ、9.9
 ・・・検出器。 特許出願人  海上電機株式会社 代理人 弁理士 羽 切 正 治 第 (a−1) δ (a−2) (b−1) (b−2)
Fig. 1 is an explanatory diagram showing the configuration of the wire bonding apparatus according to the present invention, Fig. 2 is an explanatory diagram when ultrasonic vibration and pressure variation are used together, and Fig. 3 is an explanatory diagram showing the configuration of the wire bonding apparatus according to the present invention. 4 is a block diagram showing the configuration of the circuit of the present invention; FIG. 5 is a diagram showing the configuration of a conventional wire bonding device; FIG. 6 is a diagram explaining the wire bonding process; FIG. 7 is a diagram showing the crimped shape of the ball. 1... Drive arm, 2... Bonding arm, 3
...Axis, 4,4°...Contact, 5,5...Voice coil unit, 6,6°...Solenoid unit, 7...Ultrasonic horn, 8...Capillary, 9. 9
···Detector. Patent applicant Kaiyo Denki Co., Ltd. Agent Patent attorney Masaharu Hakiri (a-1) δ (a-2) (b-1) (b-2)

Claims (2)

【特許請求の範囲】[Claims] (1)超音波熱圧着方式によるワイヤボンディングであ
って、先端にキャピラリが設けられたボンディングアー
ムと、該ボンディングアームを上下に揺動させる駆動ア
ームと、前記ボンディングアームのボンディング時にお
ける加圧力を変動させる加圧力変動手段とを備え、前記
加圧力変動手段によりボンディング時に前記キャピラリ
先端に加えられる加圧力を変動可能に構成したことを特
徴とするワイヤボンディング装置。
(1) Wire bonding using an ultrasonic thermocompression method, which includes a bonding arm with a capillary at its tip, a drive arm that swings the bonding arm up and down, and a varying pressure force during bonding of the bonding arm. 1. A wire bonding apparatus, comprising: a pressurizing force varying means, the pressurizing force varying means being configured to be able to vary the pressurizing force applied to the tip of the capillary during bonding.
(2)超音波熱圧着方式によるワイヤボンディングであ
って、ボンディングアーム先端に設けられたキャピラリ
に加えられる加圧力をボンディング時に加圧力変動手段
により変動させて印加するようにしたことを特徴とする
ワイヤボンディング方法。
(2) Wire bonding using an ultrasonic thermocompression method, characterized in that the pressure applied to the capillary provided at the tip of the bonding arm is varied during bonding by a pressure variation means. Bonding method.
JP2124169A 1990-05-16 1990-05-16 Wire bonding apparatus and method Expired - Fee Related JP2657709B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2124169A JP2657709B2 (en) 1990-05-16 1990-05-16 Wire bonding apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2124169A JP2657709B2 (en) 1990-05-16 1990-05-16 Wire bonding apparatus and method

Publications (2)

Publication Number Publication Date
JPH0424934A true JPH0424934A (en) 1992-01-28
JP2657709B2 JP2657709B2 (en) 1997-09-24

Family

ID=14878663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2124169A Expired - Fee Related JP2657709B2 (en) 1990-05-16 1990-05-16 Wire bonding apparatus and method

Country Status (1)

Country Link
JP (1) JP2657709B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100254570B1 (en) * 1995-08-18 2000-05-01 모리시타 요이찌 Semiconductor assembling method and apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613419A (en) * 1984-06-15 1986-01-09 Nec Corp Method for wire bonding
JPS61208836A (en) * 1985-03-14 1986-09-17 Toshiba Corp Wire bonding method
JPS62126647A (en) * 1985-11-28 1987-06-08 Toshiba Corp Wire bonding method
JPS62154748A (en) * 1985-12-27 1987-07-09 Hitachi Hokkai Semiconductor Ltd Wire bonding method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613419A (en) * 1984-06-15 1986-01-09 Nec Corp Method for wire bonding
JPS61208836A (en) * 1985-03-14 1986-09-17 Toshiba Corp Wire bonding method
JPS62126647A (en) * 1985-11-28 1987-06-08 Toshiba Corp Wire bonding method
JPS62154748A (en) * 1985-12-27 1987-07-09 Hitachi Hokkai Semiconductor Ltd Wire bonding method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100254570B1 (en) * 1995-08-18 2000-05-01 모리시타 요이찌 Semiconductor assembling method and apparatus

Also Published As

Publication number Publication date
JP2657709B2 (en) 1997-09-24

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