JPH0424797B2 - - Google Patents

Info

Publication number
JPH0424797B2
JPH0424797B2 JP56169409A JP16940981A JPH0424797B2 JP H0424797 B2 JPH0424797 B2 JP H0424797B2 JP 56169409 A JP56169409 A JP 56169409A JP 16940981 A JP16940981 A JP 16940981A JP H0424797 B2 JPH0424797 B2 JP H0424797B2
Authority
JP
Japan
Prior art keywords
voltage
memory cell
drain
random access
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56169409A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57123593A (en
Inventor
Boido Ruuzunaa Buruusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Unisys Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisys Corp filed Critical Unisys Corp
Publication of JPS57123593A publication Critical patent/JPS57123593A/ja
Publication of JPH0424797B2 publication Critical patent/JPH0424797B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
JP56169409A 1980-10-27 1981-10-22 Jfet dynamic memory Granted JPS57123593A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/200,997 US4423490A (en) 1980-10-27 1980-10-27 JFET Dynamic memory

Publications (2)

Publication Number Publication Date
JPS57123593A JPS57123593A (en) 1982-08-02
JPH0424797B2 true JPH0424797B2 (enExample) 1992-04-28

Family

ID=22744053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56169409A Granted JPS57123593A (en) 1980-10-27 1981-10-22 Jfet dynamic memory

Country Status (3)

Country Link
US (1) US4423490A (enExample)
EP (1) EP0050772A3 (enExample)
JP (1) JPS57123593A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4542481A (en) * 1983-01-31 1985-09-17 International Business Machines Corporation One-device random access memory cell having enhanced capacitance
JPH04218959A (ja) * 1990-10-18 1992-08-10 Mitsubishi Electric Corp 半導体装置およびその制御方法
JPH04188869A (ja) * 1990-11-22 1992-07-07 Mitsubishi Electric Corp 接合型電界効果トランジスタとキャパシタとを含む半導体記憶装置およびその製造方法
KR940002835B1 (ko) * 1991-04-17 1994-04-04 재단법인 한국전자통신연구소 접합전계형 다이내믹 램을 제조하는 방법 및 그 다이내믹 램의 구조
JPH0637269A (ja) * 1992-07-17 1994-02-10 Mitsubishi Electric Corp 接合型電界効果トランジスタ、その接合型電界効果トランジスタを含む半導体記憶装置およびそれらの製造方法
JP3922653B2 (ja) * 1993-03-17 2007-05-30 ゲイトフィールド・コーポレイション ランダムアクセスメモリ（ｒａｍ）ベースのコンフィギュラブルアレイ
US7670888B2 (en) * 2007-04-11 2010-03-02 Texas Instruments Incorporated Low noise JFET
US7692220B2 (en) 2007-05-01 2010-04-06 Suvolta, Inc. Semiconductor device storage cell structure, method of operation, and method of manufacture
US8035139B2 (en) 2007-09-02 2011-10-11 Suvolta, Inc. Dynamic random access memory having junction field effect transistor cell access device
US8278691B2 (en) 2008-12-11 2012-10-02 Micron Technology, Inc. Low power memory device with JFET device structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
JPS5142903B1 (enExample) * 1970-02-12 1976-11-18
US3740731A (en) * 1971-08-02 1973-06-19 Texas Instruments Inc One transistor dynamic memory cell
US3986180A (en) * 1975-09-22 1976-10-12 International Business Machines Corporation Depletion mode field effect transistor memory system
NL7700879A (nl) * 1977-01-28 1978-08-01 Philips Nv Halfgeleiderinrichting.
CA1118892A (en) * 1977-12-27 1982-02-23 John R. Edwards Semiconductor device utilizing memory cells with sidewall charge storage regions
US4319342A (en) * 1979-12-26 1982-03-09 International Business Machines Corporation One device field effect transistor (FET) AC stable random access memory (RAM) array

Also Published As

Publication number Publication date
US4423490A (en) 1983-12-27
JPS57123593A (en) 1982-08-02
EP0050772A3 (en) 1984-04-25
EP0050772A2 (en) 1982-05-05

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