JPH0422877B2 - - Google Patents

Info

Publication number
JPH0422877B2
JPH0422877B2 JP24821783A JP24821783A JPH0422877B2 JP H0422877 B2 JPH0422877 B2 JP H0422877B2 JP 24821783 A JP24821783 A JP 24821783A JP 24821783 A JP24821783 A JP 24821783A JP H0422877 B2 JPH0422877 B2 JP H0422877B2
Authority
JP
Japan
Prior art keywords
layer
magnesia
silicon
substrate
spinel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP24821783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60145993A (ja
Inventor
Takaaki Kimura
Yoshihiro Arimoto
Shigeo Kodama
Hideki Yamawaki
Masaru Ihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP24821783A priority Critical patent/JPS60145993A/ja
Publication of JPS60145993A publication Critical patent/JPS60145993A/ja
Publication of JPH0422877B2 publication Critical patent/JPH0422877B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP24821783A 1983-12-30 1983-12-30 絶縁性結晶基板 Granted JPS60145993A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24821783A JPS60145993A (ja) 1983-12-30 1983-12-30 絶縁性結晶基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24821783A JPS60145993A (ja) 1983-12-30 1983-12-30 絶縁性結晶基板

Publications (2)

Publication Number Publication Date
JPS60145993A JPS60145993A (ja) 1985-08-01
JPH0422877B2 true JPH0422877B2 (enExample) 1992-04-20

Family

ID=17174920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24821783A Granted JPS60145993A (ja) 1983-12-30 1983-12-30 絶縁性結晶基板

Country Status (1)

Country Link
JP (1) JPS60145993A (enExample)

Also Published As

Publication number Publication date
JPS60145993A (ja) 1985-08-01

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