JPH0422019B2 - - Google Patents

Info

Publication number
JPH0422019B2
JPH0422019B2 JP57087944A JP8794482A JPH0422019B2 JP H0422019 B2 JPH0422019 B2 JP H0422019B2 JP 57087944 A JP57087944 A JP 57087944A JP 8794482 A JP8794482 A JP 8794482A JP H0422019 B2 JPH0422019 B2 JP H0422019B2
Authority
JP
Japan
Prior art keywords
junction
photocurrent
carrier
photon beam
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57087944A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58206133A (ja
Inventor
Tadasuke Munakata
Noriaki Pponma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57087944A priority Critical patent/JPS58206133A/ja
Priority to US06/432,805 priority patent/US4563642A/en
Priority to EP82109245A priority patent/EP0077021B1/en
Priority to DE8282109245T priority patent/DE3271027D1/de
Publication of JPS58206133A publication Critical patent/JPS58206133A/ja
Publication of JPH0422019B2 publication Critical patent/JPH0422019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P74/00—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP57087944A 1981-10-09 1982-05-26 キヤリヤ寿命測定装置 Granted JPS58206133A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57087944A JPS58206133A (ja) 1982-05-26 1982-05-26 キヤリヤ寿命測定装置
US06/432,805 US4563642A (en) 1981-10-09 1982-10-05 Apparatus for nondestructively measuring characteristics of a semiconductor wafer with a junction
EP82109245A EP0077021B1 (en) 1981-10-09 1982-10-06 Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction
DE8282109245T DE3271027D1 (en) 1981-10-09 1982-10-06 Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57087944A JPS58206133A (ja) 1982-05-26 1982-05-26 キヤリヤ寿命測定装置

Publications (2)

Publication Number Publication Date
JPS58206133A JPS58206133A (ja) 1983-12-01
JPH0422019B2 true JPH0422019B2 (esLanguage) 1992-04-15

Family

ID=13928996

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57087944A Granted JPS58206133A (ja) 1981-10-09 1982-05-26 キヤリヤ寿命測定装置

Country Status (1)

Country Link
JP (1) JPS58206133A (esLanguage)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3687509B2 (ja) * 2000-09-08 2005-08-24 三菱住友シリコン株式会社 シリコン基板の品質評価方法及びその品質評価装置
WO2004055528A2 (en) 2002-12-13 2004-07-01 Accent Optical Technologies, Inc. Apparatus and method for electrical characterization of semiconductors

Also Published As

Publication number Publication date
JPS58206133A (ja) 1983-12-01

Similar Documents

Publication Publication Date Title
EP0077021B1 (en) Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction
US4949034A (en) Method for contactless evaluation of characteristics of semiconductor wafers and devices
US3939415A (en) Method of and device for measuring life time of carriers of semiconductor
US4393348A (en) Method and apparatus for determining minority carrier diffusion length in semiconductors
US4464627A (en) Device for measuring semiconductor characteristics
US4456879A (en) Method and apparatus for determining the doping profile in epitaxial layers of semiconductors
EP0118199B1 (en) An apparatus for measuring carrier lifetimes in a semiconductor
CN102144284A (zh) 用于缺陷检测的方法及设备
CN110940860A (zh) 一种非接触式测量硅晶圆电阻率的光学方法
US5369495A (en) Semiconductor contaminant sensing system and method
US20080036464A1 (en) Probes and methods for semiconductor wafer analysis
CN103543130B (zh) 一种消除光载流子辐射技术半导体材料特性测量装置的系统频率响应影响的方法
JPH0422019B2 (esLanguage)
JP2937557B2 (ja) 拡散層深さ測定装置
US20040212377A1 (en) Method for measuring resistivity of semiconductor wafer
JPS6242537Y2 (esLanguage)
JPS56150888A (en) Semiconductor laser device
JPH0544187B2 (esLanguage)
JPH1174325A (ja) 表面光電圧による半導体表面評価方法及び装置
Goodman Improvements in method and apparatus for determining minority carrier diffusion length
US7573271B2 (en) Apparatus for measuring electric characteristics of semiconductor
JPS59149029A (ja) 化合物半導体結晶基板の評価装置
JPH09211084A (ja) 半導体装置の検査方法および検査装置
WO2019017122A1 (ja) 半導体ウェハ
JPH04139852A (ja) 半導体基板の検査方法