JPH0422019B2 - - Google Patents
Info
- Publication number
- JPH0422019B2 JPH0422019B2 JP57087944A JP8794482A JPH0422019B2 JP H0422019 B2 JPH0422019 B2 JP H0422019B2 JP 57087944 A JP57087944 A JP 57087944A JP 8794482 A JP8794482 A JP 8794482A JP H0422019 B2 JPH0422019 B2 JP H0422019B2
- Authority
- JP
- Japan
- Prior art keywords
- junction
- photocurrent
- carrier
- photon beam
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P74/00—
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57087944A JPS58206133A (ja) | 1982-05-26 | 1982-05-26 | キヤリヤ寿命測定装置 |
| US06/432,805 US4563642A (en) | 1981-10-09 | 1982-10-05 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer with a junction |
| DE8282109245T DE3271027D1 (en) | 1981-10-09 | 1982-10-06 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction |
| EP82109245A EP0077021B1 (en) | 1981-10-09 | 1982-10-06 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57087944A JPS58206133A (ja) | 1982-05-26 | 1982-05-26 | キヤリヤ寿命測定装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58206133A JPS58206133A (ja) | 1983-12-01 |
| JPH0422019B2 true JPH0422019B2 (enExample) | 1992-04-15 |
Family
ID=13928996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57087944A Granted JPS58206133A (ja) | 1981-10-09 | 1982-05-26 | キヤリヤ寿命測定装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58206133A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3687509B2 (ja) * | 2000-09-08 | 2005-08-24 | 三菱住友シリコン株式会社 | シリコン基板の品質評価方法及びその品質評価装置 |
| US7663385B2 (en) | 2002-12-13 | 2010-02-16 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
-
1982
- 1982-05-26 JP JP57087944A patent/JPS58206133A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58206133A (ja) | 1983-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0077021B1 (en) | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction | |
| US4949034A (en) | Method for contactless evaluation of characteristics of semiconductor wafers and devices | |
| US3939415A (en) | Method of and device for measuring life time of carriers of semiconductor | |
| US5025145A (en) | Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements | |
| US4393348A (en) | Method and apparatus for determining minority carrier diffusion length in semiconductors | |
| US4464627A (en) | Device for measuring semiconductor characteristics | |
| US4456879A (en) | Method and apparatus for determining the doping profile in epitaxial layers of semiconductors | |
| EP0118199B1 (en) | An apparatus for measuring carrier lifetimes in a semiconductor | |
| CN110940860A (zh) | 一种非接触式测量硅晶圆电阻率的光学方法 | |
| US5369495A (en) | Semiconductor contaminant sensing system and method | |
| US20080036464A1 (en) | Probes and methods for semiconductor wafer analysis | |
| CN103543130B (zh) | 一种消除光载流子辐射技术半导体材料特性测量装置的系统频率响应影响的方法 | |
| JPH0422019B2 (enExample) | ||
| JP2937557B2 (ja) | 拡散層深さ測定装置 | |
| US20040212377A1 (en) | Method for measuring resistivity of semiconductor wafer | |
| JPS6242537Y2 (enExample) | ||
| JP3650917B2 (ja) | 表面光電圧による半導体表面評価方法及び装置 | |
| JPS56150888A (en) | Semiconductor laser device | |
| JPH0544187B2 (enExample) | ||
| Goodman | Improvements in method and apparatus for determining minority carrier diffusion length | |
| US7573271B2 (en) | Apparatus for measuring electric characteristics of semiconductor | |
| JPS59149029A (ja) | 化合物半導体結晶基板の評価装置 | |
| JPH09211084A (ja) | 半導体装置の検査方法および検査装置 | |
| WO2019017122A1 (ja) | 半導体ウェハ | |
| JPH07318419A (ja) | 電磁波センサ |