JPH04215022A - Infrared ray detecting element - Google Patents
Infrared ray detecting elementInfo
- Publication number
- JPH04215022A JPH04215022A JP40209590A JP40209590A JPH04215022A JP H04215022 A JPH04215022 A JP H04215022A JP 40209590 A JP40209590 A JP 40209590A JP 40209590 A JP40209590 A JP 40209590A JP H04215022 A JPH04215022 A JP H04215022A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- semiconductor substrate
- absorbing film
- electrode
- infrared ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010408 film Substances 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 238000001514 detection method Methods 0.000 claims description 37
- 238000002955 isolation Methods 0.000 claims description 13
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 229910007277 Si3 N4 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 101700004678 SLIT3 Proteins 0.000 description 1
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、温度による抵抗値の変
化を利用して赤外線を検出する赤外線検出素子に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared detection element that detects infrared rays by utilizing changes in resistance due to temperature.
【０００２】0002
【従来の技術】赤外線検出素子は、一般に微弱な赤外線
の輻射エネルギのみを検出する用途に用いられることが
多く、高感度であることが要求されることが多い。そこ
で、赤外線検出素子を赤外以外の波長帯を除去する赤外
線フィルタと組み合わせて用い、感度を上げるようにし
てある。そして、従来では赤外線検出部と赤外線フィル
タ部とを別個に作成した後、互いの光軸を合わせて組み
立てられていた。2. Description of the Related Art Infrared detection elements are generally used to detect only weak infrared radiation energy, and are often required to have high sensitivity. Therefore, an infrared detection element is used in combination with an infrared filter that removes wavelengths other than infrared to increase sensitivity. Conventionally, the infrared detection section and the infrared filter section were created separately and then assembled by aligning their optical axes.
【０００３】第６図に従来のこの種の赤外線検出素子の
構造の一例を示す。この赤外線検出素子では、ベース５
に取り付けられたステム１にサーミスタ等の赤外線検出
素子チップ２を取り付け、上面の開口に赤外線フィルタ
３が貼着されたキャップ４を赤外線検出素子２を覆うよ
うにベース５に取り付けてある。なお、赤外線検出素子
の内部は密封してある。このような構造の赤外線検出素
子の赤外線フィルタ３は、検出する赤外線の波長帯を良
好に通過させると共に、雑音となる不要な波長成分を遮
断し、空気との屈折率差による反射損失を軽減するため
、基板材料３ａの両面に光学干渉多層膜３ｂをコーティ
ングしたものを用いてある。FIG. 6 shows an example of the structure of a conventional infrared detection element of this type. In this infrared detection element, base 5
An infrared detecting element chip 2 such as a thermistor is attached to a stem 1 attached to the base 5, and a cap 4 having an infrared filter 3 stuck to an opening on the top surface is attached to a base 5 so as to cover the infrared detecting element 2. Note that the inside of the infrared detection element is sealed. The infrared filter 3 of the infrared detection element having such a structure satisfactorily passes the wavelength band of the infrared rays to be detected, blocks unnecessary wavelength components that become noise, and reduces reflection loss due to the difference in refractive index with air. Therefore, a substrate material 3a coated with an optical interference multilayer film 3b on both sides is used.
【０００４】ところが、この種の構造の赤外線検出素子
では、赤外線フィルタ３をキャップ４の開口部の形状に
合わせた微小な形に切り出し、それを開口部に接着剤で
貼り付ける必要がある。このため、組立工数が多く、組
立が面倒で、結果として組立コストが高くなるという欠
点があった。また、各部品の形状的な制約や組立作業性
の面からの制約により、赤外線検出素子チップ２と赤外
線フィルタ３ をある程度離しておく必要があり、この
ために赤外線検出素子の上下幅が広くなり、しかも視野
角θが狭きなるという欠点もあった。However, in the infrared detecting element having this type of structure, it is necessary to cut the infrared filter 3 into a minute shape that matches the shape of the opening of the cap 4, and to attach it to the opening with an adhesive. Therefore, there are disadvantages in that the number of assembly steps is large, the assembly is troublesome, and as a result, the assembly cost is high. Furthermore, due to constraints on the shape of each component and constraints on assembly workability, it is necessary to keep the infrared detection element chip 2 and the infrared filter 3 a certain distance apart, which increases the vertical width of the infrared detection element. Moreover, there was also the drawback that the viewing angle θ became narrow.
【０００５】そこで、本発明者等は上記問題点を解決し
、簡単で能率的、かつ低コストで製造でき、しかも小形
で、視野角を十分に確保することができる赤外線検出素
子を提案している。この赤外線検出素子では、半導体基
板の片面に赤外線検出部を形成し、半導体基板と赤外線
検出部とを熱的に分離する熱分離空間を半導体基板に設
け、０．１〜５．０μｍの薄膜の多結晶シリコンまたは
非晶質シリコンからなる薄膜抵抗体と、この薄膜抵抗体
の表面を覆う複数の電極とで上記赤外線検出部を構成し
てある。ここで、電極は薄膜抵抗体と信号処理回路とを
接続する配線としての機能を備えると共に、赤外線の吸
収体として薄膜抵抗体の温度変化を良好とする働きがあ
る。上記信号処理回路は、検出信号の増幅、雑音の除去
といった信号処理を行うものであり、半導体基板上に一
体に形成することができる。また、この赤外線検出素子
では、赤外線検出部の下部の半導体基板をエッチング等
により取り除いて熱分離空間を形成し、この熱分離空間
により半導体基板と赤外線検出部とを熱的に分離し、赤
外線検出感度が良好となるようにしてある。Therefore, the present inventors solved the above problems and proposed an infrared detection element that can be manufactured easily, efficiently, and at low cost, is small, and can secure a sufficient viewing angle. There is. In this infrared detection element, an infrared detection part is formed on one side of a semiconductor substrate, a thermal isolation space is provided in the semiconductor substrate to thermally isolate the semiconductor substrate and the infrared detection part, and a thin film of 0.1 to 5.0 μm is formed on the semiconductor substrate. The infrared detecting section is composed of a thin film resistor made of polycrystalline silicon or amorphous silicon and a plurality of electrodes covering the surface of the thin film resistor. Here, the electrode has a function as a wiring connecting the thin film resistor and the signal processing circuit, and also functions as an infrared absorber to improve the temperature change of the thin film resistor. The signal processing circuit performs signal processing such as amplifying the detection signal and removing noise, and can be integrally formed on the semiconductor substrate. In addition, in this infrared detection element, the semiconductor substrate below the infrared detection section is removed by etching etc. to form a thermal isolation space, and the semiconductor substrate and the infrared detection section are thermally separated by this thermal isolation space, and the infrared detection section is It is designed to have good sensitivity.
【０００６】しかしながら、この赤外線検出素子のよう
に電極に赤外線の吸収体の働きを持たせた場合、電極に
よる赤外線吸収率が悪いために、赤外線検出感度を高く
できないという問題があった。つまり、電極は金属であ
るため、赤外線に対する反射率が大きく、赤外線を２０
〜３０％程度しか吸収できない。しかも、上記半導体基
板上に電極が一体形成されるため、電極として半導体プ
ロセスに適した材料を使用しなければならないため、赤
外線の吸収率はさらに悪くなるためである。However, when the electrode has the function of an infrared absorber as in this infrared detection element, there is a problem that the infrared detection sensitivity cannot be increased because the infrared absorption rate of the electrode is poor. In other words, since the electrode is made of metal, it has a high reflectance for infrared rays, and
Only ~30% can be absorbed. Furthermore, since the electrodes are integrally formed on the semiconductor substrate, a material suitable for the semiconductor process must be used for the electrodes, which further deteriorates the absorption rate of infrared rays.
【０００７】[0007]
【発明が解決しようとする課題】本発明は上記問題点の
解決を目的とするものであり、赤外線の吸収率が高い赤
外線検出素子を提供しようとするものである。SUMMARY OF THE INVENTION The present invention aims to solve the above-mentioned problems and provides an infrared detection element that has a high absorption rate of infrared rays.
【０００８】[0008]
【課題を解決するための手段】本発明では、上記目的を
達成するために、半導体基板の片面に赤外線検出部を形
成し、この赤外線検出部を半導体基板から熱的に分離す
る熱分離空間を半導体基板に設け、入射される赤外線を
吸収する赤外線吸収膜と、この赤外線吸収膜より受ける
温度の変化によって抵抗値が可変する薄膜抵抗体と、薄
膜抵抗体に取り付けられた少なくとも一対の電極部とで
上記赤外線検出部を構成してある。[Means for Solving the Problems] In order to achieve the above object, the present invention forms an infrared detecting section on one side of a semiconductor substrate, and provides a thermal isolation space for thermally separating the infrared detecting section from the semiconductor substrate. An infrared absorbing film provided on a semiconductor substrate to absorb incident infrared rays, a thin film resistor whose resistance value is variable according to changes in temperature received by the infrared absorbing film, and at least one pair of electrode parts attached to the thin film resistor. The above-mentioned infrared detecting section is constructed as follows.
【０００９】[0009]
【作用】本発明は上述のように赤外線検出部に電極と別
個に赤外線吸収膜を設けることにより、赤外線吸収膜を
赤外線の吸収率の高い材料で形成できるようにして、電
極に赤外線吸収膜の働きを持たせた場合よりも赤外線の
吸収率を高くできるようにしたものである。[Function] As described above, the present invention provides an infrared absorbing film in the infrared detecting section separately from the electrode, so that the infrared absorbing film can be formed of a material with a high absorption rate of infrared rays. This makes it possible to increase the absorption rate of infrared rays compared to when it has a function.
【００１０】0010
【実施例】本発明の一実施例を第１図乃至第３図に示す
。本実施例の赤外線検出素子では、第１図に示すように
、半導体基板１０の片面に赤外線検出部Ａを形成すると
共に、半導体基板１０に信号処理回路２０も形成してあ
る。ここで、半導体基板１０は、第２図に示すように、
シリコンウエハ１１の表面に酸化シリコン（ＳｉＯ２
）あるいは窒化シリコン（Ｓｉ３ Ｎ４ ）などからな
る絶縁層３０を形成したものであり、上記赤外線検出部
Ａは絶縁層３０上に形成してある。上記赤外線検出部Ａ
は通常のＩＣ回路作製における半導体プロセス等と同様
の薄膜形成技術や微細加工技術などを利用して形成して
あり、０．１〜５．０μｍの薄膜の多結晶シリコンから
なる薄膜抵抗体４０と、この薄膜抵抗体１０の表面を覆
う櫛歯状の一対の電極５０と、この電極５０上に配置さ
れる赤外線吸収膜９０とで構成されている。ここで、薄
膜抵抗体４０を形成する多結晶シリコンは、従来のサー
ミスタのように不純物の多いものは好ましくなく、不純
物を添加していないものを用いてある。なお、薄膜抵抗
体４０は非晶質シリコンで形成することも可能である。
また、電極５０は普通の半導体プロセスと同様にして形
成されるので、半導体プロセスに適した材料（例えば、
ニッケルクロム等）を使用してある。さらに、赤外線吸
収膜９０は、赤外線の吸収率が高く、且つ半導体プロセ
スに適した材料である必要があるので、本実施例では酸
化シリコン（ＳｉＯ２ ）で形成してある。この酸化シ
リコン（ＳｉＯ２ ）は、熱抵抗が大きいため、熱の逃
げが少ないという特長がある。しかも、酸化シリコンは
、半導体の絶縁膜として用いられているように電気的に
問題がなく、熱容量が小さく、応答性への影響が少ない
ので、赤外線吸収膜９０は赤外線検出部Ａの保護膜とし
ての役目も果たす。なお、赤外線吸収膜９０を信号処理
回路２０を含む赤外線検出素子全体を覆うように形成し
、赤外線検出素子全体の保護膜として用いてもよい。ま
た、赤外線吸収膜９０を酸化シリコンの代わりに窒化シ
リコン（Ｓｉ３ Ｎ４ ）を用いて形成してもよい。と
ころで、半導体基板１０と赤外線検出部Ａとの間には、
赤外線検出部Ａの下部の半導体基板１０をエッチング等
により取り除いて熱分離空間８０を形成し、この熱分離
空間８０によって半導体基板１０と赤外線検出部Ａとを
熱的に分離して赤外線検出感度が良好になるようにして
ある。ここで、熱分離空間８０の上面となる絶縁層３０
部分には赤外線検出部Ａの回りを囲むようにスリット３
１を形成し、絶縁層３０を通して熱が半導体基板１０側
に伝導することを極力防止する構造にしてある。なお、
第１図の場合には直線状の４本のスリット３１を夫々赤
外線検出部Ａの回りに形成してあるが、例えば第４図に
示すように一部だけを残して赤外線検出部Ａの回りを囲
む連続するスリット３１を形成してもよい。つまり、本
発明の赤外線検出素子は振動により誤動作することはな
く、耐衝撃性に強いので、上記第４図に示す構造とする
ことができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention is shown in FIGS. 1 to 3. In the infrared detecting element of this embodiment, as shown in FIG. 1, an infrared detecting section A is formed on one side of a semiconductor substrate 10, and a signal processing circuit 20 is also formed on the semiconductor substrate 10. Here, the semiconductor substrate 10, as shown in FIG.
Silicon oxide (SiO2) is deposited on the surface of the silicon wafer 11.
) or silicon nitride (Si3 N4), and the infrared detecting section A is formed on the insulating layer 30. The above infrared detection section A
is formed using the same thin film formation technology and microfabrication technology as the semiconductor process in normal IC circuit production, and the thin film resistor 40 is made of polycrystalline silicon with a thickness of 0.1 to 5.0 μm. , a pair of comb-shaped electrodes 50 covering the surface of the thin film resistor 10, and an infrared absorbing film 90 disposed on the electrodes 50. Here, as for the polycrystalline silicon forming the thin film resistor 40, it is not preferable to use a polycrystalline silicon containing a lot of impurities like in a conventional thermistor, and instead, a polycrystalline silicon to which no impurities are added is used. Note that the thin film resistor 40 can also be formed of amorphous silicon. Further, since the electrode 50 is formed in the same manner as in a normal semiconductor process, it is made of a material suitable for the semiconductor process (for example,
Nickel chromium, etc.) are used. Further, the infrared absorbing film 90 needs to be made of a material that has a high absorption rate of infrared rays and is suitable for semiconductor processing, so it is formed of silicon oxide (SiO2) in this embodiment. This silicon oxide (SiO2) has a large thermal resistance, so it has the advantage of less heat escaping. Furthermore, silicon oxide has no electrical problems as it is used as an insulating film for semiconductors, has a small heat capacity, and has little effect on responsiveness, so the infrared absorbing film 90 can be used as a protective film for the infrared detecting section A. It also plays the role of Note that the infrared absorbing film 90 may be formed to cover the entire infrared detecting element including the signal processing circuit 20, and may be used as a protective film for the entire infrared detecting element. Further, the infrared absorbing film 90 may be formed using silicon nitride (Si3 N4) instead of silicon oxide. By the way, between the semiconductor substrate 10 and the infrared detection section A,
The semiconductor substrate 10 below the infrared detection section A is removed by etching or the like to form a thermal isolation space 80, and the thermal isolation space 80 thermally isolates the semiconductor substrate 10 and the infrared detection section A, thereby increasing the infrared detection sensitivity. It's meant to be good. Here, the insulating layer 30 which becomes the upper surface of the thermal isolation space 80
There is a slit 3 surrounding the infrared detection part A.
1 and is structured to prevent heat from being conducted to the semiconductor substrate 10 side through the insulating layer 30 as much as possible. In addition,
In the case of FIG. 1, four linear slits 31 are formed around the infrared detection section A, but as shown in FIG. A continuous slit 31 surrounding the slit 31 may be formed. In other words, since the infrared detection element of the present invention does not malfunction due to vibration and has strong impact resistance, it can have the structure shown in FIG. 4 above.
【００１１】本実施例の赤外線検出素子の製造方法の一
例を第３図に基づいて説明する。なお、半導体基板１０
上には信号処理回路２０を通常の半導体プロセスにより
予め作製しておく。この状態において半導体基板１０の
表面にシリコン酸化膜からなる絶縁層３０を形成し、次
いで熱分離空間８０を形成する部分を除いてフォトレジ
スタ膜１２を形成し、エッチングによりフォトレジスト
のない部分の絶縁層３０を取り除く（第３図（ａ））。
そして、異方性エッチングにより半導体基板１０に空間
を形成し、空間の内面に絶縁層３０を形成する（第３図
（ｂ））。その後、絶縁層３０上に蒸着してニッケル蒸
着膜１３を形成し、熱分離空間８０を形成する部分を除
いてフォトレジスタ膜１２を形成し、ニッケル１４をメ
ッキする（第３図（ｃ））。次いで、上記ニッケル蒸着
膜１３が無くなるまで研磨して平坦化し、絶縁膜３０を
形成し、絶縁膜３０上に薄膜抵抗体４０を形成する（第
３図（ｄ））。その後は、薄膜抵抗体４０の上にさらに
ニッケルクロムからなる電極膜を蒸着して電極５０を形
成し、さらに酸化シリコンを蒸着して赤外線吸収膜９０
を形成する。そして、最後にスリット３１を形成し、そ
の部分からニッケルを溶かし出して、熱分離空間８０を
形成する。An example of the method for manufacturing the infrared detecting element of this embodiment will be explained with reference to FIG. Note that the semiconductor substrate 10
A signal processing circuit 20 is previously fabricated thereon by a normal semiconductor process. In this state, an insulating layer 30 made of a silicon oxide film is formed on the surface of the semiconductor substrate 10, and then a photoresist film 12 is formed except for the part where the thermal isolation space 80 is to be formed, and the part without the photoresist is insulated by etching. Remove layer 30 (FIG. 3(a)). Then, a space is formed in the semiconductor substrate 10 by anisotropic etching, and an insulating layer 30 is formed on the inner surface of the space (FIG. 3(b)). Thereafter, a nickel evaporated film 13 is formed by vapor deposition on the insulating layer 30, a photoresist film 12 is formed except for the part where the thermal isolation space 80 is formed, and nickel 14 is plated (FIG. 3(c)). . Next, the nickel vapor deposited film 13 is polished and planarized until it disappears, an insulating film 30 is formed, and a thin film resistor 40 is formed on the insulating film 30 (FIG. 3(d)). Thereafter, an electrode film made of nickel chromium is further deposited on the thin film resistor 40 to form an electrode 50, and silicon oxide is further deposited to form an infrared absorbing film 90.
form. Finally, a slit 31 is formed, and the nickel is melted out from the slit 31 to form a thermal isolation space 80.
【００１２】赤外線検出部Ａの上に被着される赤外線フ
ィルタ７０はシリコンで形成されている。ここで、赤外
線検出部Ａの回りの絶縁層３０上にはチタン（Ｔｉ）／
白金（Ｐｔ）／金（Ａｕ）からなる３層膜を形成し、こ
の３層膜上に赤外線フィルタ７０を載置し、赤外線フィ
ルタ７０と３層膜の最上部のＡｕ層とに熱処置を加え、
これによりＡｕ−Ｓｉ共晶合金３２を形成させて、気密
封止した状態で赤外線検出部Ａを覆うように赤外線フィ
ルタ７０を取り付ける。このようにすれば、赤外線検出
部Ａの機械的な保護も可能である。赤外線フィルタ７０
の内部を真空とすることにより、電極５０から空気への
熱伝導がなくなり、さらに検出感度の向上が可能となる
。The infrared filter 70 placed on the infrared detecting section A is made of silicon. Here, titanium (Ti)/
A three-layer film made of platinum (Pt)/gold (Au) is formed, an infrared filter 70 is placed on this three-layer film, and heat treatment is applied to the infrared filter 70 and the topmost Au layer of the three-layer film. In addition,
As a result, an Au-Si eutectic alloy 32 is formed, and the infrared filter 70 is attached so as to cover the infrared detecting section A in a hermetically sealed state. In this way, the infrared detection section A can also be mechanically protected. Infrared filter 70
By creating a vacuum inside the electrode 50, heat conduction from the electrode 50 to the air is eliminated, and detection sensitivity can further be improved.
【００１３】本実施例の赤外線検出素子では、入射され
た赤外線は赤外線吸収膜９０によって吸収され、薄膜抵
抗体４０の温度を変化させ、この温度変化によって可変
する薄膜抵抗体４０の抵抗値に応じた出力を電極５０を
通して信号処理回路２０に出力するというように動作す
る。ところで、上述の説明の場合には熱分離空間７０を
赤外線検出部Ａの下方に形成してあったが、第５図に示
すように異方性エッチングにより半導体基板１０の下面
に熱分離空間８０を形成してもよい。また、この第５図
に示すように一対の電極５０で薄膜抵抗体４０を上下に
挟み込む構造としてもよい。In the infrared detecting element of this embodiment, the incident infrared rays are absorbed by the infrared absorbing film 90, and the temperature of the thin film resistor 40 is changed, and the resistance value of the thin film resistor 40 is changed depending on the temperature change. The output is outputted to the signal processing circuit 20 through the electrode 50. Incidentally, in the case of the above explanation, the thermal isolation space 70 was formed below the infrared detection part A, but as shown in FIG. may be formed. Further, as shown in FIG. 5, a structure may be adopted in which the thin film resistor 40 is sandwiched between a pair of electrodes 50 above and below.
【００１４】[0014]
【発明の効果】本発明は上述のように、半導体基板の片
面に赤外線検出部を形成し、この赤外線検出部を半導体
基板から熱的に分離する熱分離空間を半導体基板に設け
、入射される赤外線を吸収する赤外線吸収膜と、この赤
外線吸収膜より受ける温度の変化によって抵抗値が可変
する薄膜抵抗体と、薄膜抵抗体に取り付けられた少なく
とも一対の電極部とで上記赤外線検出部を構成したもの
であり、赤外線検出部に電極と別個に赤外線吸収膜を設
けてあるので、赤外線吸収膜を赤外線の吸収率の高い材
料で形成でき、このため電極に赤外線吸収膜の働きを持
たせた場合よりも赤外線の吸収率を高くでき、赤外線検
出感度を向上させることができる利点がある。Effects of the Invention As described above, the present invention forms an infrared detecting section on one side of a semiconductor substrate, and provides a thermal isolation space in the semiconductor substrate to thermally isolate the infrared detecting section from the semiconductor substrate. The infrared detecting section is composed of an infrared absorbing film that absorbs infrared rays, a thin film resistor whose resistance value is variable according to changes in temperature received by the infrared absorbing film, and at least one pair of electrode parts attached to the thin film resistor. Since the infrared detecting part is provided with an infrared absorbing film separately from the electrode, the infrared absorbing film can be made of a material with a high infrared absorbing rate. Therefore, if the electrode has the function of an infrared absorbing film. It has the advantage that it can increase the absorption rate of infrared rays and improve the infrared detection sensitivity.
【図１】本発明の一実施例の赤外線検出素子の分解斜視
図である。FIG. 1 is an exploded perspective view of an infrared detection element according to an embodiment of the present invention.
【図２】同上の断面図である。FIG. 2 is a sectional view of the same as above.
【図３】同上の要部の製造方法を示す説明図である。FIG. 3 is an explanatory diagram showing a method of manufacturing the main parts same as above.
【図４】スリットを異なる形状とした場合の要部の平面
図ある。FIG. 4 is a plan view of the main parts when the slits have different shapes.
【図５】他の実施例の斜視図である。FIG. 5 is a perspective view of another embodiment.
【図６】従来例の断面図である。FIG. 6 is a sectional view of a conventional example.
Ａ 赤外線検出部 １０ 半導体基板 ４０ 薄膜抵抗体 ５０ 電極 ８０ 熱分離空間 ９０ 赤外線吸収膜 A Infrared detection section 10 Semiconductor substrate 40 Thin film resistor 50 electrode 80 Thermal separation space 90 Infrared absorption film
Claims (1)
成し、この赤外線検出部を半導体基板から熱的に分離す
る熱分離空間を半導体基板に設け、入射される赤外線を
吸収する赤外線吸収膜と、この赤外線吸収膜より受ける
温度の変化によって抵抗値が可変する薄膜抵抗体と、薄
膜抵抗体に取り付けられた少なくとも一対の電極部とで
上記赤外線検出部を構成して成ることを特徴とする赤外
線検出素子。1. An infrared detecting section is formed on one side of a semiconductor substrate, a thermal isolation space is provided in the semiconductor substrate to thermally isolate the infrared detecting section from the semiconductor substrate, and an infrared absorbing film that absorbs incident infrared rays is provided. , wherein the infrared detecting section is constituted by a thin film resistor whose resistance value is variable according to changes in temperature received by the infrared absorbing film, and at least one pair of electrode sections attached to the thin film resistor. detection element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40209590A JPH04215022A (en) | 1990-12-14 | 1990-12-14 | Infrared ray detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40209590A JPH04215022A (en) | 1990-12-14 | 1990-12-14 | Infrared ray detecting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04215022A true JPH04215022A (en) | 1992-08-05 |
Family
ID=18511906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP40209590A Withdrawn JPH04215022A (en) | 1990-12-14 | 1990-12-14 | Infrared ray detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04215022A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5426412A (en) * | 1992-10-27 | 1995-06-20 | Matsushita Electric Works, Ltd. | Infrared detecting device and infrared detecting element for use in the device |
| JP2012119389A (en) * | 2010-11-29 | 2012-06-21 | Tdk Corp | Thermistor, temperature sensor and gas sensor |
-
1990
- 1990-12-14 JP JP40209590A patent/JPH04215022A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5426412A (en) * | 1992-10-27 | 1995-06-20 | Matsushita Electric Works, Ltd. | Infrared detecting device and infrared detecting element for use in the device |
| JP2012119389A (en) * | 2010-11-29 | 2012-06-21 | Tdk Corp | Thermistor, temperature sensor and gas sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980312 |