KR101569350B1 - Wafer Level Packaging Device - Google Patents

Wafer Level Packaging Device Download PDF

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Publication number
KR101569350B1
KR101569350B1 KR1020140035461A KR20140035461A KR101569350B1 KR 101569350 B1 KR101569350 B1 KR 101569350B1 KR 1020140035461 A KR1020140035461 A KR 1020140035461A KR 20140035461 A KR20140035461 A KR 20140035461A KR 101569350 B1 KR101569350 B1 KR 101569350B1
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reflow
sensor
wafer level
level packaging
packaging device
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KR1020140035461A
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Korean (ko)
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KR20140133775A (en
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한용희
김형원
안미숙
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(주)유우일렉트로닉스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)

Abstract

A wafer level packaging device is provided.
A packaging element of the present invention comprises: a lower sensor substrate on which a sensor is formed; An upper cap substrate provided on the lower sensor substrate and having a cavity formed on one surface thereof so that the sensor can be received; And a metal solder layer for bonding the lower sensor substrate and the upper cap substrate, wherein a ripple of the molten metal solder layer generated when the upper and lower substrates are bonded between the sensor and the metal solder layer is formed on the lower sensor substrate, And a first reflow cut-off film which is capable of cutting off the low temperature is formed.

Description

[0001] Wafer level packaging device [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a wafer level packaging device, and more particularly, to a wafer level packaging device in which a CAP substrate and a sensor substrate on which a sensor is formed are packaged at a wafer level using a metal solder layer, ) Barrier layer formed on a wafer-level packaging device.

In general, an infrared sensor is a sensor that detects infrared rays emitted by an object and measures the presence or absence of an object by using the magnitude of thermal energy of the infrared ray. Such an infrared sensor is applied to various fields. For example, it is possible to detect the presence of a person in the automatic door, automatically open / close the door, automatically turn on / off the light, and detect security devices or the presence of a human body in the middle of the night, An air conditioner or the like for controlling the air conditioner.

2. Description of the Related Art [0002] Conventionally, infrared sensing devices commonly used in such infrared sensors include heat absorbing sensing devices such as pyroelectric, thermopile, and bolometer. Among these infrared sensing devices, the bolometer is the best performing, easy to manufacture, and small volume. Such a bolometer detects an infrared ray by measuring a change in electric resistance due to a rise in temperature when the infrared ray is absorbed from the human body. Other sensing devices 10 7 -10 8 ㎝㎐ 1/2 W, while showing a low infrared sensitivity of -1 degree, the infrared sensitivity of the meter is a ball 10 8 ~ 10 9 ㎝㎐ 1/2 W - 1 is about . Bromomer materials require high TCR (Temperature Coefficient of Resistance) values, low device resistance, and interconnection with IC processes.

However, in the case of the infrared sensor, the infrared sensor is manufactured as a chip on a wafer, separated into individual chips by dicing, and individually packaged in a vacuum chamber. At this time, although the vacuum packaging process is a process necessary for maintaining the performance of the infrared sensor, there is a problem that a large amount of cost is required to occupy a large part of the total cost of the MEMS device. In addition, the size of the cap and the like used in the infrared sensor itself is a serious obstacle to miniaturization of the infrared sensor.

Accordingly, a technique for manufacturing a MEMS sensor using wafer-level packaging technology has been proposed as an invention for solving the above-mentioned prior art. As shown in FIG. 1, the conventional technology has a cap wafer 10 having a cavity formed on one surface thereof, and an element wafer 20 on which an infrared sensing device 25 is formed, by bonding upper and lower wafers using wafer level packaging, A technology for manufacturing an infrared MEMS sensor is proposed. In the above-described conventional technique, heat and pressure are applied to the metal solder layer 30 to bond the upper and lower wafers to melt the metal solder layer 30, thereby joining the upper and lower wafers.

However, when the upper and lower wafers are bonded together as described above, the metal solder layer 30 is melted at the time of bonding, and the molten metal material is reflowed to move toward the sensing element 25, Accordingly, there is a problem in that the detection sensor may become inoperable due to the contact of the molten metal material with the sensing element 25. [ In order to solve this problem, it is possible to consider a method of widening the interval between the metal solder layer 30 and the sensing element 25, but this has a limitation that the size of a sensor to be manufactured inevitably increases.

Therefore, in the fabrication of MEMS sensor devices using wafer level packaging, an alternative solution to the above-mentioned reflow problem has emerged.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a method of manufacturing a device using wafer level packaging, And a wafer level packaging device having a reflow barrier film that can solve the problems.

The technical objects to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical subjects which are not mentioned can be clearly understood by those skilled in the art from the following description It will be possible.

According to an aspect of the present invention,

A lower sensor substrate on which a sensor is formed;

An upper cap substrate provided on the lower sensor substrate and having a cavity formed on one surface thereof so that the sensor can be received; And

And a metal solder layer for bonding the lower sensor substrate and the upper cap substrate,

Wherein a first reflow shielding film is formed between the sensor and the metal solder layer on the lower sensor substrate so as to prevent reflow of the molten metal solder layer generated when the upper and lower substrates are bonded together. Packaging device.

The lower sensor substrate may include an electrode pad electrically connected to an external signal electrode.

Also, a second reflow shielding layer may be formed on the lower sensor substrate between the electrode pad and the metal solder layer.

Also, on the lower sensor substrate, a first reflow receiving groove may be formed between the sensor and the first reflow preventing film.

Also, on the lower sensor substrate, a second reflow receiving groove may be formed between the electrode pad and the second reflow shielding film.

Further, a metal coating layer made of the same metal as the reflow shielding film may be formed in the reflow receiving recess.

It is preferable that the width of the reflow blocking film and the reflow receiving groove is controlled in the range of 50 to 100 mu m.

Further, it is preferable that the distance between the reflow blocking film and the reflow receiving groove is controlled to be 10 mu m or less.

Further, the depth of the reflow receiving groove is preferably 0.5 占 퐉 or less.

The material forming the reflow barrier film is preferably a metal material having good wettability.

It is preferable that the reflow preventing film has the same composition as the metal solder layer.

Further, the reflow shielding film is preferably formed of at least one material selected from Au, AuSn, Sn, Cu and Ag, more preferably Au.

The sensor may be a MEMS sensor.

The MEMS sensor may be an infrared sensor.

In addition,

A reflective layer formed on the lower sensing sensor substrate; A sensing layer formed on a space above the reflective layer; A supporting layer formed on the lower surface of the sensing layer to support the sensing layer; A protective layer formed on the upper surface of the sensing layer; And a support for supporting the sensing layer such that the sensing layer has a floating structure on the space.

A getter may be formed in the cavity of the upper cap substrate.

Further, an infrared filter may be formed on at least one surface of the upper cap substrate.

In addition, the sensing layer may include an infrared sensing film formed of one selected from VOx, a-Si, and VWO x .

In addition, the sensor may be formed as a system-on-a-chip (SoC) monolithically with a signal processing unit integrated in the lower sensor substrate.

The present invention having the above-described configuration has the following effects.

First, in manufacturing a device using wafer-level packaging, the present invention forms a reflow shielding film along the periphery of a sensor, thereby preventing contact between the molten metal solder and the sensor caused by melting of the metal solder layer at the time of bonding the upper and lower wafers Thereby effectively preventing the problem of inability to operate the sensor.

In order to prevent the reflow phenomenon, the distance between the metal solder layer and the sensor must be set to a certain distance or more. Therefore, the size of the device to be manufactured must be large. In the present invention, And the distance between the sensor and the sensor can be shortened, so that it is possible to promote miniaturization of the device to be manufactured.

1 is a schematic cross-sectional view of an infrared sensing sensor manufactured using a conventional wafer level packaging.
2 is a schematic cross-sectional view of a wafer level packaging device according to an embodiment of the invention.
Figure 3 is a schematic view showing the junction of the upper and lower wafers of the device of Figure 2;
4 is a schematic cross-sectional view showing a basic structure of an infrared ray sensor according to an embodiment of the present invention.
5 is a schematic cross-sectional view showing a lower sensor substrate of a wafer level packaging device according to another embodiment of the present invention

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the detailed description of known functions and configurations incorporated herein will be omitted when it may unnecessarily obscure the subject matter of the present invention.

The same reference numerals are used for portions having similar functions and functions throughout the drawings.

In addition, in the entire specification, when a part is referred to as being 'connected' to another part, it may be referred to as 'indirectly connected' not only with 'directly connected' . Also, to include an element does not exclude other elements unless specifically stated otherwise, but may also include other elements.

2 is a schematic cross-sectional view of a wafer level packaging device according to an embodiment of the invention. 2, the packaging device 100 of the present invention includes a lower sensor substrate 110 and an upper cap substrate 170 on which a sensor 130 is formed, And a metal solder layer 150 for bonding the first and second electrodes 170 and 170 to each other. The first sensor substrate 130 and the metal solder layer 150 are formed on the lower sensor substrate 110. The first sensor substrate 130 and the metal solder layer 150 may prevent reflow of the molten metal solder layer, A reflow shielding film 120a is formed.

First, the packaging device of the present invention includes a lower sensor substrate 110 on which a sensor is formed. In the present invention, a silicon wafer may be used as the lower sensor substrate 110, but the present invention is not limited thereto. In addition, a signal processing unit (not shown) may be integrated in the lower sensor substrate 110, and the signal processing unit may be electrically connected to the sensor 130. The signal processing unit may be integrated on the lower substrate 110 through a CMOS process, for example, a semiconductor manufacturing technology. In addition, the sensor 130 may be manufactured by MEMS technology in monolithic manner with the lower substrate 110 on which the signal processing unit is integrated. Here, the signal processing unit and the sensor 130 may be implemented as SoC (System on Chip) in the lower substrate 110.

In the packaging device of the present invention, the lower sensor substrate 110 may include an electrode pad 160 electrically connected to an external signal electrode (not shown). The electrode pad 160 electrically connects the signal processing unit to an external signal electrode. The electrode pad 160 is connected to the signal processing unit in the form of a metal thin film and transmits a signal processed in the signal processing unit to an external signal electrode It plays a role. In an embodiment of the present invention, the electrode pad 160 may be connected to an external signal electrode through wire bonding.

The present invention is not limited to the type of the sensor 130, and the sensor may be a MEMS sensor, for example, an infrared sensor.

FIG. 4 is a sectional view showing the basic structure of the infrared ray sensor 230 according to an embodiment of the present invention. As shown in FIG. 4, the infrared sensor 230 of the present invention includes a reflection layer 211 formed on a lower substrate 210; A sensing layer 213 formed on the space above the reflective layer 211; And a support 215 for supporting the sensing layer 213 in an upper space. The supporting part 215 supports the sensing layer 213 on the upper space 212 of the reflective layer 211 and electrically connects the sensing layer 213 and the signal processing part 217 . The supporting part 215 is preferably made of a conductive material.

The sensing layer 213 senses infrared rays and has a floating structure floating on the upper space 212 of the reflective layer 211. This sensing layer 213 is preferably monolithically fabricated with the signal processing section 217 using a micromachining technique. As the sensing material of the sensing layer 213, it is preferable to use a material such as VOx, a-Si and VWO X. The reflection layer 211 is formed on the lower wafer 210 to provide a resonance effect by infrared reflection, and may be formed of a metal thin film. For example, it is preferably formed of aluminum or chromium / gold deposited to a thickness of approximately 2000 to 3000 ANGSTROM.

In the present invention, a supporting layer 218a selectively supporting the sensing layer 213 in the lower portion of the sensing layer 213, and a supporting layer 218b for totally protecting the infrared sensing element 213 on the sensing layer 213 And may further include a protective layer 218b. The sensing layer 213 and the supporting portion 215 may be directly connected to each other or may be connected to each other through another conductive material.

The packaging device 100 of the present invention is provided on the lower sensor substrate 110 and includes an upper cap Cap 130 having a cavity 140 formed on one surface thereof to receive the sensor 130 ) Substrate 170 as shown in FIG.

In the present invention, the upper substrate 170 may be a silicon wafer, for example, and the cavity 140 may be easily formed by bulk etching a part of the upper substrate 170.

Also, the cavity 140 is required to have a predetermined height and length since the sensor 130 described above is required to be accommodated in the wafer level packaging. In an embodiment of the present invention, the cavity 140 may be formed to have a height of several tens of micrometers, and may be formed by etching with KOH or ICP-RIE (Reactive Ion Etching) after a known photolithography process.

In the present invention, an infrared filter may be formed on at least one of the inner and outer surfaces of the upper cap substrate 170. Such an infrared filter filters and transmits the wavelength emitted from the human body to be sensed.

One or more getters may be formed on the inner surface of the upper substrate 170 on which the cavities 140 are formed. The getter functions to increase the degree of vacuum in the package by absorbing gas generated in the process of bonding the lower sensor substrate 110 and the upper cap substrate 170 at the wafer level.

The packaging device 100 of the present invention includes a metal solder layer 150 for bonding the lower sensor substrate 110 and the upper cap substrate 170. The metal solder layer 150 may be formed in a pattern using a lift-off process or the like to package the lower sensor substrate 110 and the upper cap substrate 170 at the wafer level. And the upper substrate 170, as shown in FIG.

In the present invention, the metal solder layer 150 may be formed of a material such as Au, AuSn, Sn, Cu, and Ag. More preferably, a material containing Au and Sn is used. In one embodiment of the present invention, the metal solder layer 150 may include 80 wt% of Au + 20 wt% of Sn, and another example may be 10 wt% of Au + 90 wt% of Sn. Here, Au and Sn may be deposited in the form of a multilayer thin film, or an alloy of Au and Sn may be deposited in the form of a thin film.

The present invention is not limited to the specific bonding method using the metal solder layer 150, and various bonding methods can be used. For example, thermocompression bonding, eutectic bonding, or the like can be used as the metal bonding method. For example, Au-Au thermocompression bonding and Au-Sn eutectic bonding may be used depending on the type of the metal solder layer 150.

When the lower sensor substrate 110 and the upper cap substrate 170 are packaged at the wafer level using the metal solder layer 150 described above, the metal solder layer 150 is reflowed by the high temperature heat and pressure, (reflow) phenomenon occurs. And the reflowed molten metal material reaches the above-described sensor 130, resulting in the failure of the sensor.

The lower sensor substrate 110 of the present invention can prevent reflow of the molten metal solder layer generated when the upper and lower substrates are bonded between the sensor 130 and the metal solder layer 150 Thereby forming a first reflow shielding film 120a.

In the present invention, the first reflow shielding layer 120a is formed on the lower sensor substrate 110, and may be formed in a pattern using a lift-off process similar to the above-described metal solder layer. The first reflow shielding layer 120a is formed between the sensor 130 and the metal solder layer 150 so that the first reflow shielding layer 120a is formed in the cavity 140 .

The melted metal solder layer 150 flows into the lower substrate 110 when the lower sensor substrate 110 and the upper cap substrate 170 are bonded at the wafer level, As well. At this time, if the molten material flowing to the outside of the substrate 110 comes into contact with the electrode pad 160, there may be a problem such as a short circuit.

Accordingly, in the present invention, it is desirable to form the second reflow shielding layer 120b between the metal solder layer 150 and the electrode pad 160 on the lower sensor substrate.

In the present invention, it is preferable that the material forming the first and second reflow blocking films 120a is a metal material having good wettability.

The first and second reflow blocking films 120a may have the same composition as that of the metal solder layer 150.

Preferably, the first and second reflow blocking films 120a are formed of at least one material selected from Au, AuSn, Sn, Cu and Ag, and more preferably Au. In an embodiment of the present invention, the reflow shielding film 120a may include 80wt% Au + 20wt% Sn, and another example may be Au 10wt% + Sn 90wt%.

FIG. 3 is a schematic view showing the wafer level bonding between the lower sensor substrate 110 and the upper cap substrate 170 on which the first reflow shielding film 120a is formed. 3, the first reflow shielding layer 120a is formed between the sensor 130 and the metal solder layer 150 to prevent the diffusion of the molten material toward the sensor 130 due to the adhesion of the first reflow shielding layer 120a. Able to know.

5 is a schematic cross-sectional view showing a lower sensor substrate of a wafer level packaging device according to another embodiment of the present invention.

5, in the present invention, a first reflow receiving groove 125a is formed on the lower sensor substrate 110 between the first reflow shielding film 120a and the sensor 130 . The reflow receiving recess 125a serves to prevent the reflowed metal of the metal solder layer 150 from reaching the sensor 130 through the first cut-off film 120a and failing to operate the sensor do.

5, a second reflow receiving groove 125b may be formed between the second reflow shielding layer 120b and the electrode pad 160 on the lower sensor substrate 110, It is possible. The reflow receiving grooves 125b prevent the reflowed metal of the metal solder layer 150 from reaching the electrode pad 160 through the second cut-off film 120b to cause a short circuit or the like .

In the present invention, the first and second reflow receiving grooves 125a and 125b can be easily formed by bulk etching a part of the lower sensor substrate 110. [ In an embodiment of the present invention, the reflow receiving grooves 125a and 125b may be formed by etching using KOH or ICP-RIE (Reactive Ion Etching) after a known photolithography process.

In another embodiment of the present invention, a metal coating layer 120c made of the same material as the reflow blocking layers 120a and 120b may be formed in the first and second reflow receiving recesses 125a and 125b. The metal coating layer 120c may be formed to increase the wettability of the reflowed metal solder, and may be easily formed using a conventional lift-off process.

Also, in the present invention, the widths of the reflow shielding films 120a and 120b and the reflow receiving grooves 125a and 125b are preferably in the range of 50 to 100 μm.

The distance between the reflow shielding films 120a and 120b and the reflow receiving grooves 125a and 125b is preferably controlled to 10 μm or less. It is preferable that the distance between the shielding films 120a and 120b and the receiving grooves 125a and 125b is such that the solder flowing down into the receiving groove is not left as it is. However, considering the following pattern formation and etching process, .

The depth of the reflow receiving grooves 125a and 125b is preferably 0.5 mu m or less.

As described above, according to the present invention, in manufacturing an element manufactured by packaging the upper and lower wafers at the wafer level, a reflow shielding film or a reflow receiving groove capable of blocking the reflow of the metal solder layer, The reliability of the manufactured packaging element can be ensured and the size of the element can be further promoted.

While the present invention has been particularly shown and described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of course, this is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the equivalents as well as the claims that follow.

110: Lower sensor substrate 120a, b: Reflow blocking film
125a, b ..... Reflow accommodating groove
130 ......... sensor 140 ............ cavity
150 Metal solder layer 160 Electrode pad
170 ........ Upper cap substrate

Claims (20)

A lower sensor substrate on which a sensor is formed;
An upper cap substrate provided on the lower sensor substrate and having a cavity formed on one surface thereof so that the sensor can be received;
And a metal solder layer for bonding the lower sensor substrate and the upper cap substrate,
A first reflow shielding film is formed on the lower sensor substrate so as to prevent reflow of the molten metal solder layer that occurs when the upper and lower substrates are bonded between the sensor and the metal solder layer,
And a first reflow accommodating groove is formed between the sensor and the first reflow shielding film on the lower sensor substrate.
The wafer level packaging device of claim 1, further comprising an electrode pad electrically connected to an external signal electrode on the lower sensor substrate.
The wafer level packaging device of claim 2, wherein a second reflow shielding layer is formed on the lower sensor substrate between the electrode pad and the metal solder layer.
delete The wafer level packaging device of claim 3, wherein a second reflow receiving groove is formed on the lower sensor substrate between the electrode pad and the second reflow shielding film.
The wafer level packaging device according to claim 1 or 5, wherein a metal coating layer made of the same metal as the reflow shielding film is formed in the reflow receiving groove.
The wafer level packaging device of claim 1 or 3, wherein the reflow blocking film has a width in the range of 50 to 100 mu m.
The wafer level packaging device according to claim 1 or 5, wherein the reflow receiving groove has a width in a range of 50 to 100 mu m.
The wafer level packaging device according to any one of claims 1 to 5, wherein a distance between the reflow blocking film and the reflow receiving groove is 10 占 퐉 or less.
The wafer level packaging device according to any one of claims 1 to 5, wherein a depth of the reflow receiving groove is 0.5 占 퐉 or less.
The wafer level packaging device according to claim 1 or 3, wherein the reflow blocking film is made of a metal material having good wettability.
The wafer level packaging device of claim 1 or 3, wherein the reflow barrier film has the same composition as the metal solder layer.
The wafer level packaging device of claim 1 or 3, wherein the reflow blocking film comprises at least one material selected from the group consisting of Au, Sn, AuSn, Cu and Ag.
The wafer level packaging device of claim 6, wherein the reflow barrier film is made of Au.
The wafer level packaging device of claim 1, wherein the sensor is a MEMS sensor.
16. The wafer level packaging device of claim 15, wherein the MEMS sensor is an infrared sensor.
17. The method of claim 16,
The infrared sensor includes:
A reflective layer formed on the lower wafer; A sensing layer formed on a space above the reflective layer; A supporting layer formed on the lower surface of the sensing layer to support the sensing layer; A protective layer formed on the upper surface of the sensing layer; And a support for supporting the sensing layer such that the sensing layer has a floating structure on the space.
The wafer level packaging device of claim 1, wherein a getter is formed in the cavity of the upper cap substrate.
The wafer level packaging device according to claim 1, wherein an infrared filter is formed on at least one surface of the upper cap substrate.
The wafer level packaging system according to claim 1, wherein the sensor is formed in a so-called system-on-a-chip (SoC) monolithic with a signal processing unit integrated in the lower sensor substrate. Sensor element used.
KR1020140035461A 2013-05-09 2014-03-26 Wafer Level Packaging Device KR101569350B1 (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2020111588A1 (en) * 2018-11-28 2020-06-04 한국과학기술원 Mems element having curved reflective layer and method for manufacturing mems device

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Publication number Priority date Publication date Assignee Title
WO2018199601A1 (en) * 2017-04-28 2018-11-01 (주)에스엔텍 Sensor-mounted wafer
KR101996844B1 (en) * 2018-02-14 2019-07-05 주식회사 오킨스전자 Filter chip package and wafer level package having diffusion barrier structure for bonding layer, and method for manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020111588A1 (en) * 2018-11-28 2020-06-04 한국과학기술원 Mems element having curved reflective layer and method for manufacturing mems device
KR20200063428A (en) * 2018-11-28 2020-06-05 한국과학기술원 A MEMS Device With A Curved Reflection Layer And The Manufacturing Method of the MEMS Device
KR102120912B1 (en) * 2018-11-28 2020-06-09 한국과학기술원 A MEMS Device With A Curved Reflection Layer And The Manufacturing Method of the MEMS Device
US11359973B2 (en) 2018-11-28 2022-06-14 Korea Advanced Institute Of Science And Technology MEMS device having curved reflective layer and method for manufacturing MEMS device

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