KR20160122872A - Wafer level packaging device - Google Patents

Wafer level packaging device Download PDF

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Publication number
KR20160122872A
KR20160122872A KR1020150052230A KR20150052230A KR20160122872A KR 20160122872 A KR20160122872 A KR 20160122872A KR 1020150052230 A KR1020150052230 A KR 1020150052230A KR 20150052230 A KR20150052230 A KR 20150052230A KR 20160122872 A KR20160122872 A KR 20160122872A
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KR
South Korea
Prior art keywords
sensor
substrate
wafer level
layer
packaging device
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KR1020150052230A
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Korean (ko)
Inventor
안미숙
김형원
송준규
Original Assignee
(주)유우일렉트로닉스
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Priority to KR1020150052230A priority Critical patent/KR20160122872A/en
Publication of KR20160122872A publication Critical patent/KR20160122872A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Micromachines (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

Provided is a wafer level packaging device. The wafer level packaging device includes: a sensor substrate having a sensor formed thereon; a cap substrate provided on the sensor substrate, and having a cavity formed on the rear so as to accommodate the sensor and a lens pattern capable of collecting incident light on the surface; and a metal solder layer bonding the sensor substrate and the cap substrate.

Description

[0001] Wafer level packaging device [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to the manufacture of a wafer level packaging device, and more particularly, to an apparatus and a method for manufacturing a wafer level packaging device using the wafer level packaging process, To a wafer level packaging device capable of improving the resolution and reducing the size of the sensor including the lens.

Generally, the method of measuring the temperature of objects is a contact type measurement method in which a sensor is directly contacted to an object, and a non-contact type measurement method in which energy radiated from the surface of an object is measured. The noncontact temperature measurement method is used to measure the surface temperature of a hot object, a moving object, a temperature change or contamination object which is difficult to measure by contact, or an object inaccessible.

The noncontact temperature measurement method extracts the temperature by detecting the infrared energy emitted from the surface of the object. Infrared energy sensors include thermopiles, pyroelectric sensors, and bolometer sensors. Lens use is essential to focus infrared energy and improve sensor performance. Infrared sensors have limitations in performance without lenses, and there is a limitation in reducing the physical size of the lenses, including lens thickness and lens housing size when using lenses. In particular, a solution for reducing the physical size is required in order to be applied to a system in which the sensor module size is limited, such as a smart device and a waferable device.

Among the infrared energy sensors, the one with the best performance and the smallest volume is the bolometer. Such a bolometer detects an infrared ray by measuring a change in electric resistance due to a rise in temperature when the infrared ray is absorbed from the human body. Other sensing devices 10 7 -10 8 ㎝㎐ 1/2 W infrared sensitivity 10 of -1 degree, as seen in the meter, while showing a low infrared sensitivity of 8 ~ 10 9 ㎝㎐ 1/2 W - 1 , so the performance Is excellent. Bromomer materials require high TCR (Temperature Coefficient of Resistance) values, low device resistance, and interconnection with IC processes.

1, an infrared lens 150 is formed on the upper part of the device in order to efficiently integrate the input signal. In addition, since the sensor 110 has a sensing capability There was an improvement effect. However, such a sensor has a problem in that the size of the entire infrared ray sensing element is increased, which is not compatible with the trend of reducing the thickness of the device, and the manufacturing cost is increased. In FIG. 1, reference numeral 130 denotes an IR window, and the inside of the device is in a vacuum state.

2, a conventional technology for forming an infrared lens 250 on the upper part of the wafer level packaging infrared sensing device has been proposed. However, since the present technology also has a large size, There was a problem that the thinning was restricted. In FIG. 2, reference numeral 210 denotes a lower sensor substrate, and reference numeral 230 denotes an upper cap substrate.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a wafer level packaging device, which uses an infrared lens substrate having a lens pattern formed thereon as a cap substrate, And to provide a wafer level packaging device capable of reducing the size of a sensor including a lens.

Further, the technical problems to be solved by the present invention are not limited to the technical problems mentioned above, and other technical problems which are not mentioned can be understood from the following description in order to clearly understand those skilled in the art to which the present invention belongs .

According to an aspect of the present invention,

A sensor substrate on which a sensor is formed;

A cap substrate provided on the sensor substrate and having a cavity formed on a back surface thereof so that the sensor can be received and having a lens pattern formed on the surface thereof to condense incident light; And

And a metal solder layer for bonding the sensor substrate and the cap substrate.

And an electrode pad electrically connected to an external signal electrode on the sensor substrate.

The sensor may also be a MEMS infrared sensor.

A getter may be formed in the cavity of the cap substrate.

An infrared filter may be formed on at least one surface of the cap substrate.

Dicing grooves may be formed on the left and right lower ends of the cap substrate.

Further, the metal solder layer is preferably composed of at least one material selected from Au, AuSn, Sn, Cu and Ag

The upper cap substrate may also be a Si wafer.

In addition,

A reflective layer formed on the sensor substrate; A sensing layer formed on a space above the reflective layer; A supporting layer formed on the lower surface of the sensing layer to support the sensing layer; A protective layer formed on the upper surface of the sensing layer; And a support for supporting the sensing layer such that the sensing layer has a floating structure on the space.

The present invention having the above-described configuration has the following effects.

First, the spatial resolution of the infrared sensing device can be increased by forming a lens pattern capable of focusing light incident on the surface of the upper cap substrate in the wafer level packaging device.

There is also a useful effect of increasing the sensitivity with the same sensor performance.

1 is a schematic view showing an example of a conventional infrared ray sensing device.
2 is a schematic view showing another example of a conventional infrared ray sensing device.
3 is a schematic cross-sectional view showing a wafer level packaging device according to an embodiment of the present invention.
4 is a schematic view showing a process for manufacturing a wafer level packaging device according to an embodiment of the present invention.
5 is a schematic cross-sectional view illustrating an infrared ray sensor according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a schematic cross-sectional view of a wafer level packaging device according to one embodiment of the present invention.

 As shown in FIG. 3, the packaging device of the present invention includes a sensor substrate 310 on which a sensor 315 is formed; A cavity 333 is formed on the back surface of the sensor substrate 310 so that the sensor can be received. A lens pattern 335 is formed on the surface of the cavity 333 to condense incident light. A cap substrate 330 having a plurality of protrusions; And a metal solder layer 320 for bonding the sensor substrate 310 and the cap substrate 330 to each other.

First, the packaging device of the present invention includes a sensor substrate 310 on which a sensor 315 is formed. In the present invention, a silicon wafer may be used as the sensor substrate 310, but the present invention is not limited thereto. In addition, a signal processing unit (not shown) may be integrated in the sensor substrate 310, and the signal processing unit may be electrically connected to the sensor 315. The signal processing unit may be integrated on the lower substrate 310 through a CMOS process, for example, a semiconductor manufacturing technology. Also, the sensor 315 may be manufactured by MEMS technology monolithically with the lower substrate 310 on which the signal processing unit is integrated. Here, the signal processing unit and the sensor 315 may be implemented as SoC (System on a Chip) in the lower substrate 310.

In the packaging device of the present invention, the sensor substrate 310 may include an electrode pad 313 electrically connected to an external signal electrode (not shown). The electrode pad 313 electrically connects the signal processing unit to an external signal electrode. The electrode pad 313 is connected to the signal processing unit in the form of a metal thin film and transmits a signal processed by the signal processing unit to an external signal electrode It plays a role. In an embodiment of the present invention, the electrode pad 313 may be connected to an external signal electrode through wire bonding.

The present invention is not limited to the type of the sensor 310, and the sensor may be a MEMS sensor, for example, an infrared sensor.

5 is a cross-sectional view showing a basic structure of the infrared ray sensor 530 according to an embodiment of the present invention. 5, the infrared sensor 530 of the present invention includes a reflection layer 511 formed on a lower substrate 510; A sensing layer 513 formed on the space above the reflective layer 511; And a supporter 515 for supporting the sensing layer 513 in an upper space. The supporting part 515 serves to support the sensing layer 513 on the upper space 512 of the reflective layer 511 and to electrically connect the sensing layer 513 and the signal processing part 517 . The supporting portion 515 is preferably made of a conductive material.

The sensing layer 513 senses infrared rays and has a floating structure floating on the upper space 512 of the reflective layer 511. This sensing layer 513 is preferably monolithically fabricated with the signal processing portion 517 using a micromachining technique. As the sensing material of the sensing layer 517, it is preferable to use a material such as VOx, a-Si, V-W-OX. The reflection layer 511 may be formed of a metal thin film to achieve a resonance effect due to infrared reflection on the lower wafer 510. For example, it is preferably formed of aluminum or chromium / gold deposited to a thickness of approximately 2000 to 3000 ANGSTROM.

In the present invention, a supporting layer 518a selectively supporting the sensing layer 513 in the lower portion of the sensing layer 513, and a protective layer 518a for protecting the infrared sensing element entirely on the sensing layer 513 518b. The sensing layer 513 and the supporting portion 515 may be directly connected to each other or may be connected to each other through another conductive material.

The packaging element of the present invention is provided on the sensor substrate 310 and a cavity 333 is formed on a back surface of the packaging substrate 310 so that the sensor 310 can be accommodated. And a cap substrate 330 on which a lens pattern 335 capable of focusing light is formed.

In the present invention, the cap substrate 330 may be a silicon wafer, for example. The cavity 333 can be easily formed by bulk etching a part of the cap substrate 330. A dicing glue 337 is formed on the left and right lower ends of the cap substrate 330. The dicing glue 337 can be easily formed by bulk etching a part of the cap substrate 330. [

On the other hand, the cavity 333 is required to have a predetermined height and length because it is required to accommodate the sensor 315 described above in wafer level packaging. In an exemplary embodiment of the present invention, the cavity 335 may be formed to have a height of several tens to several hundreds of micrometers, and may be formed by a known photolithography process followed by etching with KOH or ICP-RIE (Reactive Ion Etching) .

In the present invention, an infrared filter layer or an anti-reflecting coating layer 331 may be formed on at least one of the inner and outer surfaces of the cap substrate 330. The infrared filter layer filters and transmits wavelengths emitted from the human body to be sensed.

One or more getters 334 may be formed on the inner surface of the cap substrate 330 on which the cavities 333 are formed. The getter functions to increase the degree of vacuum in the package by absorbing gas generated in the process of bonding the sensor substrate 310 and the cap substrate 330 at the wafer level.

In the present invention, an infrared lens pattern 335 is formed on the surface of the cap substrate 330. Since the infrared lens pattern 335 serves to focus incident light, To improve the sensitivity of the spatial resolution and to expand the spatial resolution.

In the present invention, the infrared lens pattern 335 can be easily formed on the surface of the cap substrate 330 using a conventional photolithography method using a photoresistor.

Also, in the present invention, an anti-reflecting coating layer may be formed on the surface of the cap substrate 330 on which the lens pattern 335 is formed.

In the present invention, since the infrared lens pattern 350 can be manufactured as a lens at the wafer level, the lens can be manufactured to have the same size as the chip. Therefore, it is possible to manufacture ultra-small wafer level devices including optical systems.

In addition, the packaging device of the present invention includes a metal solder layer 320 for bonding the sensor substrate 310 and the cap substrate 330. The metal solder layer 320 may be formed in a pattern using a lift-off process or the like to package the sensor substrate 310 and the cap substrate 330 at the wafer level. Specifically, the metal solder layer 320 may be formed on one of the sensor substrate 310 and the cap substrate 330.

In the present invention, the metal solder layer 320 may be formed of a material such as Au, AuSn, Sn, Cu, and Ag. More preferably, a material containing Au and Sn is used. In an embodiment of the present invention, the metal solder layer 320 may include 80wt% of Au + 20wt% of Sn, and 10wt% of Au + 90wt% of Sn. Here, Au and Sn may be deposited in the form of a multilayer thin film, or an alloy of Au and Sn may be deposited in the form of a thin film.

The present invention is not limited to the specific bonding method using the metal solder layer 320, and various bonding methods can be used. For example, thermocompression bonding, eutectic bonding, or the like can be used as the metal bonding method. For example, Au-Au thermocompression bonding and Au-Sn eutectic bonding may be used depending on the type of the metal solder layer 320.

Next, a method of manufacturing a wafer level packaging device according to an embodiment of the present invention will be described.

4 (a) to 4 (c) are schematic views illustrating a process for manufacturing a wafer-level packaging device according to an embodiment of the present invention.

As shown in FIG. 4A, in the present invention, after the cap substrate 430 is formed, a cavity 433 and a dicing glue 437 are formed under the cap substrate. As described above, the cavity 433 can be easily formed by bulk etching a part of the cap substrate 430. In an exemplary embodiment of the present invention, the cavity 433 may be formed to have a height of several tens to several hundreds of micrometers, and may be formed by a known photolithography process followed by etching with KOH or ICP-RIE (Reactive Ion Etching) . The dicing grooves 437 may also be formed in the same manner as the cavities.

In the present invention, an infrared lens pattern 435 is formed on the surface of the cap substrate 430. The infrared lens pattern 435 may be formed on the surface of the cap substrate 430 using a conventional photolithography method using a photoresistor.

In the present invention, the infrared filter layer 431 may be formed on at least one of the upper surface and the lower surface of the cap substrate 430. The infrared filter layer 431 filters and transmits wavelengths emitted from the human body to be sensed. In the present invention, the getter 434 may be formed on the infrared filter layer 431 in the cavity 433.

4 (b), in the present invention, the cap substrate 430 manufactured as described above is adhered to the sensor substrate 410 having the lower sensor 415 formed thereon. Such bonding may be performed by bonding the metal solder layer 420 formed on the back surface of the cap substrate 430 or the surface of the sensor substrate 410 described above. The metal solder layer 420 may be formed in a pattern using a lift-off process or the like to package the cap substrate 430 and the sensor substrate 410 at the wafer level. The metal solder layer 420 may be formed of at least one selected from Au, AuSn, Sn, Cu and Ag. In addition, the metal solder layer 420 is preferably composed of 80 wt% of Au + 20 wt% of Sn.

In the present invention, an electrode pad 413 electrically connected to an external signal electrode may be formed on the sensor substrate 410.

Also, a sensor 415 is formed on the sensor substrate 410, which may be an infrared MEMS sensing sensor.

4 (c), the chip may be individually diced by dicing the cap substrate 430 and the sensor substrate 410 through the dicing glue 437. In this case, That is, an individual chip can be obtained by dicing the bonded body manufactured so as to penetrate the dicing glue 437 of the cap substrate 430.

While the present invention has been particularly shown and described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of course, this is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the equivalents as well as the claims that follow.

310 sensor substrate 330 cap substrate
320 metal solder layer 335 lens pattern

Claims (7)

A sensor substrate on which a sensor is formed;
A cap substrate provided on the sensor substrate and having a cavity formed on a back surface thereof so that the sensor can be received and having a lens pattern formed on the surface thereof to condense incident light; And
And a metal solder layer for bonding the sensor substrate and the cap substrate.
The wafer level packaging device of claim 1, further comprising an electrode pad electrically connected to an external signal electrode on the sensor substrate.
The wafer level packaging device of claim 1, wherein the sensor is a MEMS infrared sensing sensor.
The wafer level packaging device according to claim 1, wherein an infrared filter is formed on at least one surface of the cap substrate.
The wafer level packaging device of claim 1, wherein the metal solder layer is formed of at least one selected from the group consisting of Au, AuSn, Sn, Cu and Ag.
The wafer level packaging device according to claim 1, wherein dicing grooves are formed at both ends of the back surface of the cap substrate.
The apparatus of claim 3, wherein the infrared sensor comprises:
A reflective layer formed on the sensor substrate; A sensing layer formed on a space above the reflective layer; A supporting layer formed on the lower surface of the sensing layer to support the sensing layer; A protective layer formed on the upper surface of the sensing layer; And a support for supporting the sensing layer such that the sensing layer has a floating structure on the space.
KR1020150052230A 2015-04-14 2015-04-14 Wafer level packaging device KR20160122872A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190118837A (en) * 2018-04-11 2019-10-21 엘지이노텍 주식회사 Infrared detection sensor module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190118837A (en) * 2018-04-11 2019-10-21 엘지이노텍 주식회사 Infrared detection sensor module

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