JPH0421350B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a semiconductor device such as a semiconductor memory circuit device.

2. Description of the Related Art Insulated gate field effect transistors that utilize traps in a gate insulating film or floating gates are known as semiconductor nonvolatile memory elements. In this type of insulated gate field effect transistor, when charge is injected into the trap or floating gate in the gate insulating film due to the tunnel effect or hot carriers caused by avalanche breakdown, the threshold value The voltage changes from one stable value to another. The state of one of the threshold voltages is made to correspond, for example, to a binary signal of 0, and the state of the other threshold voltage is made to correspond to a binary signal of 1.

The above charges can be removed by an appropriate method.

Therefore, the above type of insulated gate field effect transistor has the advantage of being usable as a nonvolatile memory element in which stored information can be written and erased.

A plurality of the semiconductor nonvolatile memory elements described above are arranged regularly on, for example, a semiconductor substrate, and are selected for reading or writing stored information.

The above-mentioned semiconductor nonvolatile memory element requires a high-voltage, high-level signal that reaches several times the signal level when writing, for example, compared to the signal level required for reading stored information.

However, since the signal level may be limited by the characteristics of the circuit elements, the semiconductor memory circuit device requires a circuit device specifically designed for the above-mentioned high level signals.

In addition, since the overall configuration of semiconductor memory circuit devices becomes complicated due to the use of circuit devices that process the above-mentioned high-level signals, it is necessary to prevent the semiconductor substrate used from increasing in size and to improve performance such as operating speed. must be taken into account so as not to be harmed.

On the other hand, although such semiconductor circuit devices are required to be realized mainly using insulated gate field effect transistors, they are also required to partially use bipolar transistors to improve the circuit configuration and functionality. It is required to realize a circuit device as a so-called semiconductor integrated circuit device formed on a single semiconductor substrate. It is necessary to improve the efficiency of the manufacturing process for such a semiconductor integrated circuit device, and it is therefore required to realize the electronic circuit using a simple manufacturing process.

An object of the present invention is to provide a semiconductor memory circuit device in which individual circuit devices are arranged at desired positions on a semiconductor substrate.

Still another object of the present invention is to provide a method for manufacturing a semiconductor integrated circuit device for realizing the various electronic circuit devices described above.

The various objects and configurations of the present invention described above will become clear from the following detailed description and accompanying drawings.

The method for manufacturing a semiconductor device of the present invention is characterized by comprising the following steps.

(a) forming an oxidation-resistant first film on the main surface of the semiconductor substrate; (b) having a pattern covering a second surface region of the main surface excluding the first surface region; (c) forming an impurity of a first conductivity type on the semiconductor substrate in a portion of the second film pattern that does not cover the main surface; By introducing the second
(d) forming a first semiconductor region in the second film in a self-aligned manner; (d) forming a first semiconductor region on the second film;
The main surface of the semiconductor substrate is oxidized using a first film formed by etching and removing the first film.
(e) using the oxide film as a mask to introduce impurities of a second conductivity type into the semiconductor substrate through the main surface; forming a second semiconductor region in a self-aligned manner in the semiconductor region; (f) forming selected portions of each of the first and second semiconductor regions of the semiconductor substrate as an element formation region; A step of forming a semiconductor region for an element in the element formation region.

According to the present invention, as will be made clear from the description of the embodiments described later, two semiconductor regions in which an element is to be formed can be formed in a mutually self-aligned manner, and moreover, the number of masks can be increased. Impurity introduction for forming both semiconductor regions can be carried out without any interference.

Hereinafter, this invention will be explained in detail based on examples. The following description will be made regarding the case where the present invention is applied to a semiconductor memory circuit device. First, the circuit configuration and layout of a memory circuit device to which the present invention is applied will be explained, and the manufacturing method to which the present invention is applied will be explained.

Although not particularly limited, in the following examples, an extremely thin silicon oxide film (Oxide) and a relatively thick silicon nitride film (Nitride) formed on this oxide film are used as semiconductor nonvolatile memory elements.
An insulated gate field effect transistor (hereinafter referred to as MNOS) having a gate insulating film with a two-layer structure is used. With respect to this MNOS, not only storage information can be written but also erased electrically.

FIG. 12 shows a cross-sectional view of the MNOS.
In the figure, an n-type source region 2 and a drain region 3 are formed on the surface of a p-type silicon region 1 and separated from each other, and the source/drain regions 2 and 3 are separated from each other.
For example, a layer with a thickness of 20 mm is applied to the surface of the p-type silicon region 1 between
A gate electrode made of n-type polycrystalline silicon is formed via a gate insulating film made of a silicon oxide film 4 with a thickness of 500 Å and a silicon nitride film 5 with a thickness of 500 Å. The p-type silicon region 1 constitutes the base gate region of the MNOS.

In the erased state or in the state in which no memory information is written, the gate voltage VG vs. drain current ID characteristic of MNOS is, for example, as shown in curve A in Figure 13, and its threshold voltage is a negative voltage of 4 volts. (hereinafter written as -4V).

In order to write or erase stored information, a high electric field is applied to the gate insulating film so that carrier injection occurs due to a tunneling phenomenon.

In the write operation, for example, 0V, which is approximately the ground potential of the circuit, is applied to the base gate 1, and a high voltage of, for example, +25V is applied to the gate 6.
A low voltage of approximately 0V or a high voltage such as +20V is applied to the source region 2 and drain region 3 depending on the information to be written.

A channel 7 is induced in the surface of the silicon region 1 between the source region 2 and the drain region 3 in response to the positive high voltage applied to the gate 6. The potential of this channel 7 becomes equal to the potential of the source region 2 and drain region 3.

When a voltage of 0V is applied to the source region 2 and drain region 3 as described above, a high electric field corresponding to the high voltage of the gate 6 acts on the gate insulating film.
As a result, electrons as carriers are injected into the gate insulating film from the channel 7 due to the tunneling phenomenon. The VG-ID characteristic of MNOS changes from curve A to curve B in FIG. The threshold voltage changes from the above-mentioned -4V to, for example, +1V.

When +20V is applied to the source region 2 and drain region 3 as described above, the potential difference between the gate 6 and the channel 7 is reduced to several volts. Such a low potential difference is insufficient to cause electron injection by tunneling. Therefore,
The characteristics of MNOS do not change from curve A in FIG.

In a semiconductor memory circuit device, a plurality of MNOS are coupled to one digit line. In the write operation described above, the voltage as described above is applied to the selected MNOS. considered unselected
A voltage of approximately 0V is applied to the gate of the MNOS, or a high voltage such as the aforementioned +20V is applied to the source and drain regions.

Erasing of stored information is performed by applying a high electric field to the gate insulating film in the opposite direction to the electric field for writing. A tunneling phenomenon occurs due to this high electric field in the opposite direction, and holes as carriers flow into the gate insulating film. The electrons injected during writing are neutralized by the holes, and as a result, the characteristics of MNOS are as shown by curve B in Figure 13.
It returns to curve A again.

According to this embodiment, for the above-mentioned erasing, instead of applying a negative high voltage to the gate 6 while applying 0V to the base gate 1, for example, 0V is applied to the gate 6 as will be clearer from the description below. At the same time, a positive high voltage such as +25V is applied to the base gate 1. By applying a positive high voltage to the base gate 1 as described above, the circuit configuration for applying a high voltage to the gate 6 can be simplified. Furthermore, high voltages of the same polarity can be used for writing and erasing, and as a result, the number of external terminals of the semiconductor memory circuit device and the number of power supplies for driving the semiconductor memory circuit device can be reduced.

The characteristics of MNOS are curve A or B in Figure 13 above.
Therefore, the information stored in the MNOS is read by detecting the conduction state between the source and drain when the gate voltage VG is 0V, for example. 1 due to single polarity signal
In order to select one of the plurality of MNOS coupled to one digit line, a unit storage element (hereinafter referred to as a memory cell) is connected to MNOSQ1 and this as shown in the equivalent circuit in FIG. Series-connected insulated gate field effect transistors for switches (hereinafter referred to as MISFETs for switches)
It consists of Q2. When reading, MNOSQ
1 gate voltage is maintained at 0V, for switch
The gate voltage of MISFET is set to 0V by the selection signal.
Or a positive voltage such as +5V.

FIG. 1 shows a circuit of a semiconductor memory circuit device according to an embodiment.

The memory circuit of this embodiment includes circuits that form relatively low voltage signals such as an X decoder, Y decoder, and control circuit, and circuits that form relatively high voltage signals such as a write circuit and an erase circuit. I'm here.

Although not particularly limited, a low power supply voltage of +5V is supplied to the power supply terminal VCC for the circuit that forms the above-mentioned low voltage signal. Depending on the power supply voltage, the high level of the low voltage signal is approximately +5V, and the low level is approximately 0V, which is the ground potential of the circuit.

A high voltage terminal VPP is provided in the circuit device for circuits such as the write circuit and erase circuit.
This high voltage terminal VPP is used when the circuit device performs a write operation and an erase operation.
A high voltage such as +25V is supplied. Depending on the high voltage mentioned above, the high level of the high voltage signal is approximately +25V or +20V, and the low level is approximately +25V or +20V.
It is assumed to be 0V.

In Figure 1, MA is a memory array,
Memory cells arranged in matrix MS11 or
Contains MS22.

Memory cells MS11 arranged in the same row,
The gates of each switch MISFET Q2 of MS12 are commonly connected to the second word line W11,
The gates of each MNOSQ1 are commonly connected to the second word line. Similarly, the gates of the switch MISFETs and MNOS of the other memory cells MS21 and MS22 arranged in the same row are commonly connected to the first word line W21 and the second word line W22, respectively.

Memory cells MS11 and M arranged in the same column
The drains of the 21 switch MISFETs Q2 are commonly connected to the digit line D1, and the sources of the MNOS are commonly connected to the reference potential line ED1. Memory cell MS1 arranged in the same line and other same column
2. The drain of MS22 switch MISFET and the source of MNOS are connected to the digit line D2, respectively.
Commonly connected to the reference potential line ED2.

According to this embodiment, the memory information of the MNOS is erased by applying a positive high voltage to the base gate, so the semiconductor region forming the memory cell is It is electrically separated from the semiconductor region forming peripheral circuits such as. As will be explained later, the above semiconductor region is, for example, a p-type semiconductor region formed on the surface of an n-type semiconductor substrate.
Consists of type well area.

For the above-mentioned erasure, individual memory cells can be formed in independent well regions, or memory cells arranged in the same row or column can be formed in a common well region. Now, the entire memory cell, that is, the memory array
MA is formed in one common well region.

In Figure 1, the line WELL represents the memory array
Connected to the well region as common substrate gate of MA.

The first word lines W11 and W21 are respectively X
Connected to the output terminals of decoders XD1 and XD2,
The second word lines W12 and W22 are write circuits.
Connected to the output terminals of WA1 and WA2.

The X decoder XD1 is connected to the power supply VCC as shown in the figure.
depletion type load MISFETQ3 connected between the output terminal and the gate and source shorted.
and enhancement-type MISFETs Q4 to Q6 connected between the output terminal and the ground terminal and receiving non-inverted outputs or inverted outputs from address buffers B0 to B6 at their respective gates, essentially forming a NOR circuit. There is. When not selected, the X decoder XD1 applies approximately 0V to the word line W11 due to the high level of the signal on at least one of the address input lines a0 to a6.
When selected, all the signals on the address input lines a0 to a6 become low level, and a high level signal of approximately 5V is output.

The X-decoder XD2 has the same configuration as the X-decoder XD1, except that the connected address input lines are different.

In FIG. 1, depletion type MISFETs such as MISFETQ3 are marked with different symbols from enhancement type MISFETs as shown.

The write circuit WA1 includes MISFETs Q15 and Q16 connected in series between the first word line W11 and the output terminal (second word line W12), and a power supply to which the above-mentioned +25V voltage is applied during writing and erasing to the output terminal. connected between terminal VPP
It consists of MISFETQ19 and MISFETQ17 and Q18 connected in series between the output terminal and the ground terminal. The gate of MISFETQ15 is connected to the write control line Wl, the gate of MISFETQ18 is connected to the read and erase control line, and
The gates of MISFETQ16 and Q18 are power supply terminals
Connected to VCC.

The control circuit CRL with the configuration described later allows the write control line to be
The Wl signal is at a low level of approximately 0V, and the control line
The vp signal is at a high level of approximately +5V.
Therefore, MISFETQ15 is in an off state, whereas MISFETQ18 is in an on state. The output terminal (second word line W12) is connected in series.
It is connected to the ground terminal of the circuit via MISFET Q17 and Q18, and is therefore brought to approximately 0V.

In write operation, +25V to power supply terminal VPP
A high voltage is applied to the write control line Wl,
Let's turn MISFETQ15 on.
A high level signal of 5V is applied to the control line,
Approximately 0V to turn MISFETQ18 off.
signal is added.

On state of MISFETQ15 above and MISFETQ
18, the second word line W12
The signal level of the first word line W11 is determined according to the signal level of the first word line W11.

That is, if the driving MISFETs Q4 to Q6 of the X decoder XD1 are all turned off so as to select the first word line W11,
For MISFETQ16, Q15 and above drive
Current paths for MISFETQ4 to Q6 are not configured. Therefore, MISFETQ is connected to the second word line W12.
+25V of the power supply terminal VPP appears through the terminal 19. In other words, almost + is applied to the selected first word line.
Corresponding to the application of 5V, approximately +25V will be applied to the selected word line.

If the first word line W11 is not selected, that is,
MISFETQ4 to Q6 for driving decoder XD1
If at least one of the is turned on,
For MISFETQ16, Q15 and above drive
Output terminal (second
A current path is formed to ground the word line W12). As a result, the output terminal is brought to approximately 0V.

In the write circuit WA1, MISFETQ16 receives the power supply voltage VCC at its gate,
Q17 is used to prevent the high voltage signal applied to the second word line W12 from being limited by the breakdown of MISFET Q15 or Q18.

That is, for example, if the MISFETQ17 is omitted, the high voltage (+25V) of the second word line W12 will be applied to the drain D of the MISFETQ18. As mentioned above, a low voltage of approximately 0V is applied to the gate of MISFETQ18 from the control line vp, so the depletion layer that should spread around the drain junction of MISFETQ18 is caused by the low voltage of this gate in the vicinity of the gate. It will be limited by voltage. As a result, the drain junction of MISFETQ18 breaks down at a relatively low voltage.

If MISFETQ17 is installed as shown,
The voltage applied to the drain of MISFETQ18 is clamped to a value increased by the threshold voltage of MISFETQ17 from the power supply voltage VCC. As a result, breakdown of MISFETQ18 is prevented. MISFETQ17 has its gate connected to the power supply VCC.
Since it is connected to the drain, it has a relatively high drain breakdown voltage.

MISFETQ16 is also used for the same reason as MISFETQ17.

According to this embodiment, the configuration using the well region as described above is effectively utilized.

Load MISFETQ1 in write circuit WA1
9 is other MISFETQ15 or Q18 etc.
It is formed in a well region independent from the well region forming the MISFET. That is, MISFETQ
The 19 body gates are electrically isolated from the body gates of other MISFETs.

As shown in the figure, the load MISFET Q19 has its base gate and source short-circuited to prevent high voltage from acting on the channel between the base gate and the source/drain.

For the connections shown, the body gate
If it is connected to the ground terminal like MISFET, the voltage required at the output terminal (second word line W12) is large, so it is due to the substrate bias effect.
The threshold voltage of MISFETQ19 increases significantly compared to other MISFETs for handling low voltages. As a result, the voltage supplied to the high voltage terminal VPP must be significantly larger than the voltage required at the output terminal (second word line W12).

On the other hand, in the case of the illustrated connection, the voltage of the body gate is equal to the voltage of the source, so that the increase in the threshold voltage of MISFET Q19 due to the body bias effect can be substantially ignored. As a result, the high voltage supplied to the high voltage terminal VPP can be made relatively small.

As mentioned above, by creating a configuration that allows the voltage supplied to the high voltage terminal VPP to be lowered, it is not necessary to make the withstand voltages of various pn junctions to which this high voltage terminal VPP is connected abnormally high. Alternatively, various undesirable leakage currents in the pn junction can be reduced. Furthermore, it is possible to prevent undesirable parasitic channels from being induced on the semiconductor surface due to the electric field from the wiring connected to the high voltage terminal VPP.

Each reference potential line ED1, ED2 of memory array MA
is connected to the write inhibit circuit IHA1.

In the write-protect circuit IHA1, a wire connected in series between the reference potential line ED1 and the ground terminal
MISFETQ20 and Q21 constitute a unit switch circuit. In this unit switch circuit
MISFETQ21 receives a control signal from the control circuit CRL via the control line r. The control signal is set at a level of +5V so as to turn on the MISFETQ21 during a read operation of stored information, and to turn off the MISFETQ21 during a write operation and an erase operation.
It is assumed to be at a level of 0V.

Therefore, the unit switch circuit sets the reference potential line ED1 to approximately 0V during the read operation.

MISFETQ22 is connected between the reference potential line ED1 and the high voltage signal line IHV. A signal is applied to the high voltage signal line IHV from a write inhibit voltage generation circuit IHA2, which will be described later, to a high voltage level of approximately +20V during write and erase operations, and to approximately 0V during read operations. Ru.

Therefore, in write and erase operations,
When MISFETQ21 of the above unit switch circuit is turned off, the reference potential line ED1 has a
The above high voltage signal line IHV via MISFETQ22
A high voltage is applied from

Between the reference potential line ED2 and the ground terminal
A unit switch circuit similar to the above consisting of MISFETQ23 and Q24 is connected, and the reference potential line ED2
and the high voltage signal line IHV is MISFETQ25.
is connected.

In the above write-protected circuit IHA1, MISFETQ2 receives +5V power supply voltage VCC on its gate.
Since the high voltage mentioned above is applied to the reference potential lines ED1 and ED2, MISFETs Q16 and Q23 provided in the write circuit WA1 are connected to MISFETs Q16 and Q23.
It is used for the same reason as 7.

MISFETQ22, Q25 are the MISFETQ1
9, in order to prevent the threshold voltage from increasing due to the substrate bias effect and to prevent the voltages of the reference potential lines ED1 and ED2 from decreasing with respect to the high voltage of the high voltage signal line IHV, separate well regions are provided. is formed.

Each digit line D1, D2 of memory array MA
A Y gate circuit is connected between the common digit line CD and
YG0 is connected.

In the Y gate circuit device YG0, MISFET Q11 and Q12 connected in series between the digit line D1 and the common digit line CD constitute a unit gate circuit, and the digit line D1 and the common digit line are connected in accordance with the output of the Y decoder YD1. Combine with line CD. Similarly, MISFET Q13 and Q14 constitute another unit gate circuit, and this unit gate circuit couples digit line D2 and common digit line in accordance with the output of Y decoder YD2.

Since a high voltage signal appears on each digit line D1 and D2 during a write operation and an erase operation, the unit switch circuit in the Y gate circuit YG0 uses MISFETs Q12 and Q14 whose gates receive a +5V power supply voltage as shown in the figure. do.

Y decoders YD1 and YD2 are the X decoders
Non-inverted signals a7 to a1 of address signals A7 to A10, which have a similar configuration to XD1 and XD2, and are output from address buffers B7 to B10.
By selectively receiving 0 and inverted signals 7 to 10, decode signals are output to the respective output lines Y1 and Y2, which are at a high level of +5V when selected and are 0V when not selected.

The common digit line CD connected to the Y gate circuit YG0 has a sense circuit IOS and a data input circuit.
IOW is connected.

The sense circuit IOS consists of a load MISFETQ47 whose gate and source are connected as shown in the figure, and a switch MISFETQ whose gate receives a signal from a control line r.
It consists of 48. In the lead-out operation, the switch MISFETQ48 is turned on by setting the signal on the line r to a high level of +5V.

The output of the sense circuit IOS above is the inverter I1
4, I15, NOR circuit NR3, NR4 and
It is supplied to the output buffer circuit IOR consisting of MISFETQ49 and Q50.

In the output buffer circuit IOR, the NOR circuit NR
3. One input terminal of each of NR4 is the control line
Connected to CS1. The signal on the control line 1 is set to a low level of 0V during the read operation,
Set to high level of +5V during write and erase operations. The other input terminal of the NOR circuit NR3 is connected to the output terminal of the inverter IN14, and NR4
The other input terminal of the inverter IN15 is connected to the output terminal of the inverter IN15 which receives the output of the inverter IN14.

Therefore, the NOR circuits NR3 and NR4 output signals having opposite phases to each other during the read operation. The series-connected MISFETs Q49 and Q50 are push-pull driven by the NOR circuits NR3 and NR4.

When the signal on the control line 1 is at high level, the NOR circuits NR3 and NR4 both output low level signals of 0V, and both MISFETs Q49 and Q50 are turned off. Above output buffer circuit IOR
The output terminal of is connected to the input/output terminal PO.
In the simultaneous OFF state of MISFET Q49 and Q50 mentioned above, the output buffer circuit has a significantly high output impedance, and therefore the input/output terminals
Do not limit the input signal applied to PO.

In the above output buffer circuit IOR, the power supply terminal
The above connected between VCC and the output terminal
MISFETQ49 is formed in a well region independent from the well regions of other MISFETs. The well region as a substrate gate is connected to its source. As a result, the increase in threshold voltage due to the body bias effect is substantially eliminated, so that the output buffer circuit IOR can output a high level signal of approximately the power supply voltage VCC.

As shown in the figure, the data input circuit IOW includes an input buffer circuit IN16, a MISFETQ51 controlled by the output of this input buffer circuit, and a MISFETQ51 that is controlled by the output of this input buffer circuit.
MISFETQ51 drain and common digit line
The MISFET Q52 is connected between the MISFET Q52 and the CD, and receives a signal from the control line Wl at its gate.

The write inhibit voltage generating circuit IHA2 is composed of MISFETs Q26 to Q36 as shown in the figure. The MISFETs Q26 to Q28 constitute a first high-voltage inverter, and upon receiving a low-voltage control signal from the control line Wl, output a high-voltage signal to the output terminal, that is, the drain of the MISFETQ27. The connections shown vary the output signal level from approximately 0V to VPP.
MISFETQ29 to Q31 constitute a second high-voltage inverter, and upon receiving the same signal as the first high-voltage inverter, outputs a high-voltage signal to the drain of MISFETQ30. Its output signal level varies from approximately +5V (VCC) to VPP. MISFETQ32 to Q36 constitute a high voltage push-pull circuit. 1st and 2nd above
MISFETQ28, Q3 that receives control signals in the high voltage inverter and push-pull output circuit of
1. Connected between Q36 and each output terminal, and receives +5V power supply voltage on the gate.
MISFETQ27, Q30, Q35 are as described above.
Like MISFETQ16, Q17, etc., it is used to ensure high output voltage of the circuit. Load MISFETQ2 in the first and second high voltage inverters
6, Q29 is configured such that the body gate is connected to each source to eliminate the drop in output voltage due to the body bias effect and to sufficiently drive MISFET Q33, Q32, and Q34 of the push-pull output circuit. There is.

In the above push-pull output circuit,
MISFETQ32 is used to limit the voltage applied to the drain of MISFETQ33 when the output of the first high voltage inverter is approximately 0V.
In other words, the output of the first high voltage inverter is approximately
When the voltage is 0V, the reference potential of the second high voltage inverter is a low voltage of +5V, so the voltage is +5V.
Outputs 5V. As a result, +5V is applied to the gate of MISFETQ32, and the drain voltage of MISFETQ33 is limited. MISFETQ3
4, after the output line IHV is set to a high voltage of +20V due to the outputs of the first and second high voltage inverters becoming high voltages, the outputs of the first and second high voltage inverters become approximately When it reaches the low level of 0V,
It is used to limit the high voltage applied from the output line IHV to the source of MISFETQ33. As a result, undesired breakdown of the source and drain junctions of the switched MISFET Q33 is prevented.

The erase circuit ERS is MISFETQ40 or Q42
A push-pull circuit includes MISFETs Q43 to Q46 and a bipolar transistor Q44. The high voltage inverter has the same configuration as the write inhibit voltage generation circuit IHA2.

In the push-pull output circuit, bipolar transistor Q44 and MISFET Q43 are connected in parallel and driven by the output of the high voltage inverter. The well region forming the memory array constitutes a heavy capacitive load for the erase circuit, as will be apparent from the structure of the circuit arrangement described below. Therefore, the erase circuit ERS is required to have a sufficiently low output impedance characteristic in order to perform a high-speed erase operation. Bipolar transistors are used in semiconductor integrated circuit devices, even though they are formed with relatively small dimensions (area).
It exhibits sufficiently low operating resistance characteristics. Therefore, as shown in the figure, the erase circuit ERS, which uses the bipolar transistor Q44 as an output transistor, can be used in a memory array even if it is formed in a small area in a semiconductor integrated circuit device.
Drive the MA well region at a sufficiently high speed. the above
The structure and manufacturing method of the bipolar transistor formed on the same semiconductor substrate as the MISFET will be explained later.

In the erase circuit ERS, when only the bipolar transistor Q44 is used, the threshold voltage (base-emitter voltage) of this bipolar transistor is, for example, 0.6V.
Even if the high voltage inverter composed of MISFETs Q40 to Q42 outputs a signal of approximately the power supply voltage VPP, the voltage signal output to the output line 1 is lowered by the threshold voltage of the transistor Q44.

The illustrated erase circuit ERS is a depletion type in which the base gate is integrated with the base gate of the load MISFETQ40 of the high voltage inverter, and the gate together with the base gate is connected to the source of the load MISFETQ40, that is, the output terminal of the high voltage inverter. MISFET Q43 is connected in parallel with the bipolar transistor Q44. the above
In the MISFETQ43, the high potential of the base gate rises almost to the power supply voltage VPP, so there is virtually no increase in threshold voltage due to the body bias effect. Therefore, the high voltage on the output line l is
The MISFETQ43 allows the voltage to be raised to almost the power supply voltage VPP.

The base gate of the MISFETQ 43 may be connected to its source, ie, the output line l, through the connections shown. Even in this case, it is possible to prevent the output level of the output line l from decreasing due to the substrate bias effect. However, if you do this, MISFETQ4
The well region serving as the base gate for Q0 and the well region serving as the base gate for Q43 cannot be shared and must be separated from each other. The requirement for a certain spacing of the well regions from each other has the disadvantage that the required area of the semiconductor substrate must be increased.

The control circuit CRL is connected to the inverter IN1 or IN1.
2. NAND circuit NA1 to NA4, NOR circuit
NR1, NR2 and series connected MISFETQ37
or Q39. This control circuit CRL is
The write inhibit voltage generation circuit IHA receives a write control signal, a chip selection signal, and a write and erase signal to the external terminals PGM and VPP, respectively.
By receiving the output signal from 2, line 1,
Outputs control signals to r, Wl, and.

The signal supplied to the terminal VPP is a high voltage signal of +25V which is shared as a power supply voltage for the write circuits WA1 and WA2, the write inhibit voltage generation circuit IHA2, and the erase circuit ERS.

The control circuit CRL uses MISFETQ as described above to control the write or erase operation only when the signal on the terminal VPP reaches a predetermined level or higher.
It includes a level shift circuit consisting of Q37 to Q39.

The operation of the semiconductor memory circuit shown in FIG. 1 will be explained as follows using the timing charts shown in FIGS. 2 through 4. Note that FIG. 2 shows a timing chart for a read operation, and FIG. 3 shows a timing chart for an erase operation. Furthermore, FIG. 4 shows a timing chart of a write operation.

In the read operation, the write control signal at the terminal PGM is set to a low level of approximately 0V. In addition, the terminal VPP is set to almost 0V or floating, and the gate is connected to +
A nearly 0V write and erase control signal appears at the drain of MISFET Q39, which receives a 5V voltage VCC.

Due to the low-level write control signal at the terminal VPP and the low-level write and erase signals at the drain of the MISFET Q39, the signals on the control lines r and are at high level, and the signal on Wl is at low level.

Therefore, each reference potential line ED of memory array MA
1 and ED2 are set to almost 0V by the write inhibit circuit IHA1, and the respective second word lines W12,
Similarly, W22 is set to approximately 0V by write circuits WA1 and WA2.

Although the timing is not particularly limited, for example, at time t0, address input terminals A0 to A1
The signal at 0 is set corresponding to the selected memory cell. For example, if the memory cell to select is
If it is MS11, address buffer B0
The output of X decoder XD1 becomes high level due to the output of
Y decoder YD1 by the output of 7 to B10
output becomes high level.

As a result, there is a connection between the drain of MNOSQ1 of memory cell MS11 and common digit line CD.
A current path is formed via MISFETQ1, Q10, digit line D1, and MISFETQ2 for switch. Also, due to the high level of the signal on the control line r, the common digit line CD and the sense circuit
A current path is formed between the IOS and the load MISFETQ47.

MNOSQ1 of memory cell MS11 is shown in FIG. 13A.
If the output line of the sense circuit IOS is in the on state as shown in the characteristics of
It will be grounded via 1. As a result, the output line of the sense circuit IOS becomes low level. If MNOSQ1 of the memory cell MS11 is in the off state as shown in the characteristics shown in FIG. 13B, then the load
The current path for MISFETQ47 is not configured,
As a result, the output line of the sense circuit IOS becomes high level.

At time t1, the chip selection signal at the terminal is changed from high level to low level, and at approximately the same time t2, the signal on control line 1 becomes low level. As a result, the output buffer circuit IOR comes to output a signal corresponding to the output level of the sense circuit IOS from the high output impedance state. For example sense circuit IOS
outputs a high level signal, the output buffer circuit IOR outputs a high level signal to the output terminal.

When the chip selection signal returns from low level to high level at time t3, the signal on control line 1 changes from low level to high level at approximately the same time t4, and in response, the output buffer circuit IOR
is again in a high output impedance state.

For the erase operation, a +25V write and erase signal is applied to the terminal VPP in advance, and a 0V low-level chip selection signal is applied to the terminal.

The signal on the control line is at a high level due to the chip selection signal at the above level, so the write circuits WA1 and WA2 set the second word lines W12 and W22 to approximately 0V.

As shown in FIG. 3, when the write control signal is set to high level at time t10, the output of NAND circuit NA4 becomes low level in response. The erase circuit ERS outputs a high voltage of +25 to the output line 1 because its MISFETs Q42 and Q46 are turned off by the low level signal of the NAND circuit NA4.

As mentioned above, since the signals on the second word lines W12 and W22 are set to 0V, the erase circuit ERS
When the well region WELL is brought to a high voltage of +25V by the output of , a high voltage for erasing is applied to the gate insulating film of the MNOS of the memory array.

The positive voltage in the well region is the voltage of the memory cell.
This direction biases the source and drain junctions of MNOSQ1 and switch MISFETQ2 in the forward direction. Therefore, if a current path is formed between at least one of the reference potential lines ED1, ED2 and the digit lines D1, D2 and the ground terminal of the circuit, the voltage to be applied to the well region will decrease.

The illustrated circuit operates as follows to prevent the voltage drop in the well region described above.

The signal on the control line r becomes low level in response to the write control signal becoming high level at time t11, which is substantially the same as time t10.

MISFETQ21, Q24 of the write inhibit circuit IHA1 and MISFET Q3 of the write inhibit voltage generating circuit IHA2 are activated by the signal on the control line r.
6 is turned off. As a result, each reference potential line ED1, ED2 of the memory array is made substantially floating.

The signal on the control line Wl is at a low level in response to the low level of the chip selection signal. Therefore, MISFETQ52 in the data input circuit IOW connected to the common digit line CD is in an off state. On the other hand, MISFETQ48 in the sense circuit IOS connected to the common digit line CD is turned off by the signal on the control line r.

Due to the floating of common digit line CD, each digit line D1, D2 of memory array MA becomes floating regardless of the operation of Y gate YG0.

At time t11, when the signal at the terminal PGM returns to low level, the output of the erasing circuit ERS also returns to low level.

As described above, the erase operation is performed in the chip selected state, whereas the write operation is performed in the chip non-selected state, that is, when the signal at the terminal is at a low level. For write operations,
A +25V write and erase signal is applied to the terminal VPP in advance.

At time t20, for example, the memory cell MS11
An address signal is set to select.
That is, the first word line W11 is set to high level by the X decoder XD1, and the first word line W11 is set to high level by the X decoder
The line Y1 is set to high level.

At time t21, information to be written is added to terminal P0. If the information to be written is 0,
The terminal P0 is set to 0V, and in response, the MISFETQ51 of the data input circuit IOW receives a high level signal of +5V from the input buffer circuit IN16, and is turned on. If the write information is 1, that is, +5V, for example, the MISFETQ51 is turned off by the 0V output from the input buffer circuit IN16.

When the write control signal of the terminal PGM becomes high level at time t22, inverters IN1 and IN2 and NOR circuit NR2 in the control circuit CRL
Time t23 after a slight delay caused by
The signal on the control line Y becomes low level. As a result, MISFETQ of write-protected circuit IHA1
21, Q24, write inhibit voltage generation circuit IHA
2 MISFETQ36 and sense circuit IOS
MISFETQ48 is turned off.

At time t24 after a slight delay from time t23, the signal on the control line becomes low level. The write inhibit voltage generation circuit IHA2 outputs a high voltage of approximately +20V to the line IHV due to the signal on the control line, and accordingly, each reference potential line ED1 and ED2 of the memory array becomes the above +20V. .

At approximately the same time as the above time t24, the control line
The We signal becomes high level. Accordingly,
MISFETQ52 of the data input circuit 20W is turned on. At the same time, the write circuit
MISFETQ15 of WA1 and WA2 is turned on.

When the signal on the output line IHV of the write inhibit voltage generation circuit IHA2 becomes sufficiently high voltage, this line
The control circuit CRL receiving the IHV signal at time t2
5, a low level signal is output to the control line. The signal on the above control line is used as a write start signal, as will be explained next. As described above, by configuring the configuration to output the write start signal after the signal on the line IHV reaches a sufficient write inhibit level, it is possible to prevent information from being erroneously written to memory cells that are not selected. can.

As mentioned above, when the signal on the control line becomes low level, the write circuit WA
1, MISFETQ18 of WA2 is turned off.
Since the first word line W11 is selected and set to approximately +5V, the write circuit WA1 outputs a high voltage of approximately +25V to the second word line W12.

Since the first word line W21 is not selected and is set at approximately 0V, the write circuit WA2 outputs approximately 0V to the second word line W22 accordingly.

In the memory cell MS11 to be selected
MNOSQ1 is MISFETQ2 for switch, digit line D1, MISFETQ12 for Y gate YGO,
Q11, common digit line CD and MISFETQ5
MISFETQ51 receives the output of input buffer circuit IN16 via MISFETQ51. If the information to be written is 1, the ON state of MISFETQ51 causes the information in the memory cell MS11 to be
MNOSQ1 has its drain and source almost
becomes 0V, and its gate (second word line W22)
Electrons are injected into the gate insulating film by the high voltage. If the information to be written is 0, the above
Due to the OFF state of MISFETQ51, the source and drain of MNOSQ1 in the memory cell MS11 are set to +20V of the write inhibit voltage generation circuit IHA2. Therefore, the electrons mentioned above are not injected. A second word line W is connected to the memory cell MS21 in another row coupled to the same digit line D1.
Since the signal of 22 is set to almost 0V as mentioned above,
No information is written.

The other digit line D2 is connected to the corresponding Y gate.
Since MISFETQ13 in YG0 is in the off state, it is maintained at +20V by the output of write inhibit voltage generation circuit IHA2.

The write control signal at terminal PGM is at time t
26, the signals on the control lines , , and r become high level at times t27, t28, and t29, respectively, as shown in FIG. Accordingly, the second word line w1
2. The signal on the reference potential line ED1 also becomes almost 0.

The semiconductor memory circuit of the present invention can have a relatively large capacity, for example 16K bits.

FIG. 5 shows a block diagram of a semiconductor memory circuit using the circuit of FIG.

In FIG. 5, the memory array MA is, for example,
It includes 16,384 memory cells arranged in 128 rows and 128 columns. For the memory array MA, an X decoder XD is provided which selects 128 memory cell rows by receiving 7-bit address input signals from address buffers B0 to B6. Also, 8 select each 16 memory cell rows.
Y gates YG0 to YG7 are provided, and these Y gates are controlled by a Y decoder YD which receives 4-bit address input signals from address buffers B7 to B10. Corresponding to the Y gates YG0 to YG7, input/output circuits I0 to I7 each include a sense circuit, an output buffer circuit, and a data input circuit as shown in FIG.
is provided. MISFETQ20 or Q as shown in Figure 1 corresponding to each memory cell column.
A write inhibit circuit IHA including 22 and one write inhibit voltage generating circuit is provided, and a write circuit WA is provided corresponding to the memory cell row. Furthermore, a control circuit CRL and an erase circuit ERS are provided.

Therefore, the semiconductor memory circuit shown in FIG. 5 stores 8 bits of information in 11 bits, that is, 2048 addresses.

As mentioned above, the configuration of the X-decoder can be simplified by configuring the memory cell with MNOS and switch MISFET and making the X-decoder and write circuit independent circuits. . Therefore, it becomes easy to speed up the selection of word lines by the X decoder, and it becomes possible to provide a memory circuit that operates at high speed.

MISFETQ22,Q in write protection circuit
The source of 25 is connected to the reference potential line ED as shown in Figure 1.
Instead of being connected to digit lines D1 and ED2, for example, they may be connected to digit lines D1 and D2. Even in the above case, it is possible to supply the write inhibit voltage to the memory array. However, if the above is done, stray capacitance such as the junction capacitance and wiring capacitance of the MISFETs Q22 and Q25 will be coupled to each digit line D1 and D2, and as a result, when reading and writing stored information, each digit line Care must be taken because the speed of signal change is limited. As shown in Figure 1, MISFETQ22,Q2
5 to the reference potential lines ED1 and ED2, the signal change speed of the digit line can be increased.

Each of the circuits described above is formed on one semiconductor substrate using semiconductor integrated circuit technology.

According to the present invention, each of the circuits described above is formed on a semiconductor substrate in an arrangement that does not limit the circuit characteristics and does not increase the size of the semiconductor substrate used.

FIG. 6 shows a pattern of regions for each circuit and wiring formed on the silicon substrate 1. In the figure, an X decoder XD is arranged at the center of the surface of the substrate 1. Memory array is MA
It is divided into two parts, MA1 and MA2, one of which is located on the left side of the X decoder XD, and the other MA
2 is placed on the right side.

A write circuit WAa is placed on the left side of the memory array MA1, and a write circuit WA6 is placed on the right side of the memory array MA2.

A Y gate YGa is arranged above the memory array MA1, and a Y gate YGb is similarly arranged above the memory array MA2. Above Y gate
A Y decoder YD is arranged between YGa and YGb, that is, above the X decoder XD.

The area around the memory array, X decoder, write circuit, Y gate, and Y decoder is a wiring area WIR as indicated by dots.

The above memory array MA across the wiring area WIR
Write inhibit circuits IHAa and IHAb are arranged below each of MA1 and MA2.

Around the surface of the board 1 are an input/output circuit IO, control circuits CRL1 and CRL2, and an input buffer circuit A.
1 to A12 are arranged. Also, around the above, there are bonding pads P1 for connecting various input terminals and output terminals to terminals outside the circuit device.
thru P26 are arranged.

To construct the circuit shown in FIG. 5, memory arrays MA1 and MA2 each have a size of 128 rows by 64 rows. Memory array MA1 and MA2
The corresponding first word lines of are simultaneously selected by the X decoder XD. The input line of the X-decoder XD is connected to an input buffer circuit arranged around the substrate 1 via wiring in the wiring area WIR.

Y gates YGa and YGb are simultaneously connected to corresponding memory arrays by the output of Y decoder YD.
The MA1 and MA2 digit lines are selected. The Y gates YGa and YGb are connected to the input/output circuit IO via wiring in the wiring area WIR.

Write inhibit circuits IHAa and IHAb are connected to reference potential lines of corresponding memory arrays MA1 and MA2 via wiring in wiring region WIR, respectively.

As mentioned above, embodiments of the present invention use well regions for the memory array and its peripheral circuitry.

FIG. 7 shows a pattern of a well region formed on the surface of silicon substrate 1, corresponding to the circuit arrangement shown in FIG. Figure 8 shows A- in Figure 7 above.
A sectional view from A is shown.

In FIGS. 7 and 8, independent p-type well regions 10a and 10b are formed on the surface of an n-type silicon substrate 1 to form a memory array.

Around the well regions 10a and 10b, peripheral circuits such as an X decoder, a Y decoder, a Y gate, a write circuit, a write inhibit circuit, an input/output circuit, an input buffer circuit, and a control circuit are formed separately from the well regions 10a and 10b. A P-type well region 11 is formed.

At the top of Figure 7, the output buffer circuit of Figure 1 is shown in a large size due to space limitations.
In order to form a MISFET that connects the source and the base gate, like the MISFET Q49 in the IOR, independent P-type well regions 11a and 11b are formed apart from the above-mentioned P-type well region 11.

On the left side of the P-type well region 10a and on the right side of the P-type well region 10b, independent P-type well regions 11c to 11d and 11e to 11f are provided, respectively, in order to similarly form a MISFET such as Q19 in the write circuit WA1 in FIG. is formed. Further, below the page of FIG. 7, in order to form MISFETs that require similar independent base gates, such as the write inhibit circuit IHA1 and the write inhibit voltage generation circuit IHA2 in FIG. P-type well region 1 independent from type well region
1g to 11h and 11i to 11j are formed.

Although not shown in FIGS. 7 and 8, the n-type silicon substrate 1 is exposed at a predetermined portion within the P-type well region 11 in order to form a MISFET to be described later.

According to this embodiment, since various P-type well regions are formed on the n-type silicon substrate 1 as described above, various effective elements such as transistors for semiconductor memory circuit devices can be formed. I can do it.

For example, channel stoppers for preventing parasitic channels are formed on the surface of the n-type silicon substrate 1 between a plurality of P-type well regions by impurity ion implantation, as will be described later. Channel stops are effectively used.

That is, for example, FIG. 9 shows a cross-sectional view of a MISFET that provides high breakdown voltage characteristics. In the figure, 11m is a P-type well region, 21 is an n-type channel stopper formed on the surface of the substrate 1 so as to span a part of the well region 11m;
95 and 96 are n ⁺ type source regions, drain regions,
63 is a gate insulating film made of silicon oxide;
0 is a thick silicon oxide film that covers the surface of the substrate 1 and the well region other than the area where elements such as MISFET are formed, 84 is a gate electrode made of n-type polycrystalline silicon, and 120 is an insulating film made of, for example, phosphosilicate glass. , 121 and 122 are a drain electrode and a source electrode, respectively, made of, for example, vapor-deposited aluminum.

In FIG. 9, the substantial drain region of the MISFET is a region 9S for contacting the electrode 121.
and a channel stopper 21. The channel stopper 21 is connected to the n-type substrate 1.
The impurity concentration is relatively low to prevent parasitic channels from being induced on the surface. Therefore, the portion of the channel stopper 21 extending above the P-type well region 11m has a sufficiently higher resistivity than the region 95 for contacting the electrode 121. The MISFET shown in FIG. 9 has a channel stopper as part of the drain region as described above, and therefore has a large drain breakdown voltage.

Therefore, in the embodiment, the n-type substrate 1 is connected to the high voltage terminal VPP (see Figure 1), and the MISFET whose drain is connected to this high voltage terminal VPP is connected.
Let be a MISFET with the structure shown in FIG. 9 above. In other words, the write inhibit voltage generation circuit IHA2 in FIG.
Depression type MISFETQ26,Q
29, Q32, depletion type MISFETQ19 in write circuits WA1, WA2, depletion type MISFETQ4 in erase circuit ERS
0, Q43 and the enhancement type MISFET Q37 in the level shift circuit or voltage dividing circuit (Q37 to Q38) in the control circuit CRL are MISFETs having the structure shown in FIG.

In addition, the depression type MISFET mentioned above is
As will become clearer from later description, it is formed by ion-implanting a P-type impurity, for example, boron, into the surface of the P-type well region 11m below the gate electrode 84.

FIG. 10 shows a cross-sectional view of an npn transistor. In the figure, the n-type substrate 1 is used as the collector region of the transistor, the P-type well region 11n is used as the base region, and the n ⁺ -type region 97 is used as the emitter region. The n ⁺ type region 97 is
These regions are formed at the same time as the source and drain regions of the MISFET. The above npn transistor is used in the erase circuit ERS of FIG.

The above-mentioned MNOS and various MISFETs may have a structure with an aluminum gate, but it is more preferable to have a structure with a silicon gate as described above.

Therefore, when explaining in detail the structure of the elements and wiring constituting each of the above circuits using silicon gate technology, the manufacturing method will first be explained for easier understanding.

Hereinafter, based on FIGS. 11A to 11O, an MNOS element, an enhancement type
A manufacturing process for forming a MOS element, a depletion type MOS element, and a bipolar transistor will be described in detail.

(A) As the substrate wafer 1, an n-type single crystal silicon (Si) wafer having a (100) crystal plane and a resistivity of 8 to 12 Ωcm (impurity concentration of about 5×10 ¹⁴ cm ⁻³ ) is used. The resistivity of this wafer is preferably as high as possible (low impurity concentration) in order to form wells with low impurity concentration with good reproducibility.
Alterable Read Only Memory (electrically rewritable read-only memory)
Since the impurity concentration of the well was set to about 3×10 ¹⁵ cm ⁻³ , a silicon (Si) wafer with the above-mentioned impurity concentration was used.

After cleaning the surface of the silicon wafer 1 as shown in FIG. 11A with an appropriate cleaning solution (O ₃ -H ₂ SO ₄ solution or HF solution), a silicon oxide film (SiO ₂ ) of about 50 nm is formed by thermal oxidation. 2 and continue to develop CVD (Chemical Vapor
A silicon nitride (Si ₃ N ₄ ) film 3 is formed to a thickness of about 100 to 140 nm by a chemical vapor deposition method. This Si ₃ N ₄ film formation method was compared using an atmospheric pressure vertical CVD apparatus, an ordinary pressure horizontal CVD apparatus, a low pressure horizontal CVD apparatus, etc., but no major differences were found. However, the film thickness obtained using a low-pressure CVD apparatus has the best uniformity, and is within ±3% within the wafer, which is convenient for microfabrication. Although the deposition temperature varies slightly depending on the method, a temperature range of 700 to 1000° C. is suitable for each method. This result is also the same for the Si ₃ N ₄ film formation used below.

(B) Next, a photoresist film 4 is formed on this silicon nitride film 3 by photoetching only in areas other than the areas where wells are to be formed (between the wells). In other words, the Si ₃ N ₄ film is exposed on the surface of the region where the well is to be formed. In this state, the exposed portion of the Si ₃ N ₄ film is removed by plasma etching, and SiO ₂ is deposited on the surface as shown in FIG. 11B.
Membrane 2 is exposed. After this, the resist film 4
Using as a mask, energy is applied to boron (B) ions through the SiO ₂ film 2 exposed on the surface into the Si substrate where there is no resist film.
P-type semiconductor regions 5 and 6 are implanted at 75 KeV and a total dose of 3×10 ¹² /cm ² .

(C) Thereafter, after removing the resist film 4, well diffusion is performed in dry oxygen (O ₂ ). Since boron becomes an acceptor type impurity in Si, a p-type well is formed. 1200
After 16 hours of diffusion at .degree. C., the formed p-type wells 10 and 11 have a surface concentration of about ^{3.times.10.sup.15} cm.sup. ^-3 and a diffusion depth of about 6 .mu.m. However, this value is a value obtained from the results of measuring the surface sheet resistance using the four-probe method and the diffusion depth using the stain etching method, assuming that the impurity distribution in the well is a Gaussian distribution. It is. The reason why well diffusion is performed in oxygen is to form a uniform well with a low concentration.

At the end of well diffusion, Figure 11C
As shown in FIG.
Silicon oxide films 12 and 13 with a thickness of 0.85 μm are formed, and an oxide film with a thickness of about 10 nm is formed on the surface of the Si ₃ N ₄ film 3. Therefore, by removing approximately 50 nm of the SiO ₂ film by full-surface SiO ₂ etching, approximately 0.8 μm thick silicon oxide films 12 and 13 remain on the well surface, and between the wells.
The surface of the Si ₃ N ₄ film 3 is exposed.

(D) Next, the Si ₃ N ₄ film 3 is heated with hot phosphoric acid (H ₃ PO ₄ ).
The first SiO ₂ film of approximately 50 nm (11th
Figure D14, 15, 16) is exposed. In this state, there is approximately 0.8μm on the well and approximately 0.8μm between the wells.
A 50nm SiO ₂ film is formed. In this state, phosphorus (P) ions are implanted into the entire surface at an energy of 125 KeV and a dose of 1×10 ¹³ cm ⁻² .
In this case, thick SiO ₂ films 12, 13 on the wells
serves as a mask, and phosphorus ions are not implanted into the well except for the peripheral part of the well region, and phosphorus ions are implanted between the wells, and the N-type semiconductor regions 20 and 21 , 22 are formed. Note _that the _well expands laterally from the edge of the Si ₃ N ₄ film used as a mask during the well diffusion, and a difference of approximately 6 μm is caused by SiO ₂ film edge) and well edge. In other words, the phosphorus ion implantation layer described above extends approximately from the well edge into the well.
It is formed up to a thickness of 6 μm. Furthermore, this phosphorus ion implantation layer has a depth of about 1 μm when measured after passing through the final thermal process.

In this way, by implanting phosphorus ions between wells in a self-aligned manner, wells (p-type)
Since it is possible to prevent conduction between the phosphorus implantation layers 20, 21, 22, SAP
Aligned P chaunel field ion
This layer is called the insplautation layer.

As mentioned above, the p-well diffusion region is made of Si ₃ N ₄
N-type impurities are formed by heat treatment in an oxidizing atmosphere using the film as a mask, and N-type impurities are implanted into the N-type substrate surface between the wells, using the thick oxide film formed on the well surface as a mask, spanning each well. By adopting a method of forming an SAP layer to prevent channel generation, ion implantation between wells can be performed without increasing the number of masks, and the well diffusion region and the ion implantation layer between wells are self-aligned. It can be formed as follows.
This technique will hereinafter be referred to as the SAP method.

That is, as is clear from the above explanation,
According to the present invention, since impurities are introduced in accordance with the pattern of the photoresist film 4 on the silicon nitride film 3, the p-type semiconductor region 10 is formed in the photoresist film 4 in a self-aligned manner.
Since the silicon nitride film 3, which is an oxidation-resistant film, is removed by etching using the photoresist film 4 as a mask, the oxide film 12 or 1 on the substrate formed using the silicon nitride film 3 as a mask is removed.
3 is also self-aligned with the photoresist film 4. Therefore, the n-type semiconductor region 21 formed using the oxide film 12 as a mask is formed in a self-aligned manner with the p-type semiconductor region 10.

After this, the SiO ₂ formed on the Si substrate surface
All films 12, 13 and 14, 15, 16 are removed. In this state, p-type well regions 10, 11 and n-type (having an impurity concentration higher than the substrate n-type impurity concentration) regions 20, 21, 22 are formed on the surface of the Si substrate, and furthermore, at the boundary between the two, , irregularities 17 (steps) of approximately 0.4 to 0.5 μm are formed. Using this step,
Mask alignment for the next photoetching process can be performed.

Next, the so-called LOCOS (Local
Oxidation of Silicon) A process called oxidation is performed.

(E) First, as mentioned above, after removing all the SiO ₂ film on the Si surface, a layer of about 50 nm is deposited on the entire surface of the substrate.
A SiO ₂ film 24 is formed by a thermal oxidation method. Subsequently, by _CVD method, 100 ~
Form a 140nm Si ₃ N ₄ film.

Next, by photoetching, a photoresist film is left only in predetermined areas such as areas where active elements will be formed (3 out of E in Figure 11).
5, 36, 37, 38, 39, 40). In other words,
In this state, the photoresist film is removed and the Si ₃ N ₄ film is exposed on the surface of the portion where it is necessary to form a thick oxide film for isolation between elements. Perform plasma etching in this state,
The exposed Si ₃ N ₄ film was removed to expose the previously formed SiO ₂ film 24 of about 50 nm on the surface. After that, using the resist film as a mask, boron B ions are injected into the Si substrate in the areas where there is no resist film through the SiO ₂ film 24 exposed on the surface at an energy of 75 KeV and a total dose of 2×10 ¹³
implanted at cm ^-2 , p-type semiconductor layers 41, 42, 4
3, 44, 45, 46 are formed. At this time, the photomask is designed so that the end of the Si ₃ N ₄ film is located within the SAP implant layer at the well end where it is necessary to form a high voltage DMOS. In this way, as shown in FIG. 11E, an active region is formed spanning the SAP layer 21 and the well. Note that this boron ion implantation is hereinafter referred to as field implantation (F implantation).

(F) Thereafter, after removing the resist film, field oxidation is performed in wet oxygen (O ₂ ). By performing this oxidation treatment at 1000° C. for about 4 hours, a SiO ₂ film 60 of about 0.95 μm is formed on the surface of the Si substrate where the Si ₃ N ₄ film has been removed. In this state, approximately
For example, the part where a 0.95 μm thick field oxide film is formed is on the Si surface in F20 in Figure 11.
Phosphorus from SAP and boron from F implant are mixed, and in terms of doses, phosphorus is implanted at a higher dose of 1×10 ¹³ cm ^-2 and boron is implanted at a higher dose of 2×10 ¹³ cm ^-2 . However, the amount of boron that segregates into SiO ₂ during field oxidation is larger; in other words, boron in Si _is
However, phosphorus in Si piles up (accumulates) at the interface with _SiO2 .
(See FIGS. 28 and 29), so that the surface between the wells has a high phosphorus concentration and sufficiently functions as a channel stopper. Thus said SAP method and LOCOS
By sharing the process, as mentioned above, phosphorus and boron
By making good use of the difference in behavior at the SiO ₂ interface, we can implant phosphorus at as low a concentration as possible without using a masking process (this is necessary for use as a drain in a high voltage depletion MOSFE TDMOS, which will be discussed later). matters) and
There is a process technology that allows boron implantation, which requires a higher dose (necessary to maintain the threshold voltage of parasitic MOS (field MOS) to a certain degree), and ultimately increases the phosphorus concentration. It becomes possible. Thus, p-type semiconductor regions 51-56 are formed under the thick oxide film on the substrate surface corresponding to the p-type ion implantation layers 41-46 in FIG. 11E.
is formed.

Now, in the state immediately after this field oxidation is performed, as shown in _FIG .
Si ₃ N ₄ films 25 to 30 of 140 nm are formed, and an oxide film of about 20 nm is formed on the surface thereof, and an SiO ₂ film 60 of about 0.95 μm is formed in the field region.

(G) In this state, when the entire surface is SiO ₂ etched to remove approximately 50 nm of SiO 2 film, approximately 0.9 μm of SiO ₂ film 60 remains in the field region, _and 50 nm of SiO ₂ film 24 and 100～
A 140nm Si ₃ N ₄ film 25-30 remains, and this
The Si ₃ N ₄ film is exposed. Continuing there,
The Si ₃ N ₄ films 25 to 30 are removed using, for example, hot phosphoric acid (H ₃ PO ₄ ) solution. In this way, the previously formed SiO ₂ film 24 of approximately 50 nm remains in the active region, and this
Although it is possible to use the SiO ₂ film 24 as an active MISFET gate oxide film,
Abnormal areas that occur at the edges of LOCOS (generally
_It is believed that this thin oxide film 24 and _{the Si 3 N 4} film on it are removed as shown in FIG. Once removed, and then for example
After repeating 45nm SiO ₂ formation → removal, the first
As shown in FIG. 1H, approximately 75 nm SiO ₂ films 62 to 67, which are actually used as gate insulating films, are formed at 1000° C. for 110 minutes in dry O ₂ , for example.

(H) Furthermore, among MOS transistors, EMOS
(Enhaucemeut mode MOS: High threshold voltage, gate voltage 0V, current is practically 0)
In order to set the threshold voltage, boron ions are implanted into the entire surface through the thin gate insulating films 62 to 67 at an energy of 40 KeV and a total dose of 2×10 ¹¹ /cm ² (Fig. 11 H71 to 7).
6). Naturally, this boron is not implanted into the field region which has a thick oxide film, and SiO ₂ is implanted into the Si substrate surface below the active region where the approximately 75 nm SiO ₂ film is present. Driven through the membrane.

(I) Next, since the EAROM described in this example uses an E/D inverter to speed up the peripheral circuit, in addition to the EMOS mentioned above, it also uses DMOS.
(Depletion mode MOS: low threshold voltage,
It is necessary to form a device that allows current to flow at a gate voltage of 0V). In order to form this DMOS in a predetermined portion, a photoresist film is deposited on the SiO ₂ films 60, 62 to 67, and then the DMOS is formed by a photoetching process as shown in FIG. 11I.
The photoresist film on the area where it is necessary to form the photoresist film 80 is removed, and the other parts are covered with the photoresist film 80.
Using this as a mask, phosphorus ions are implanted only in the designated areas (81), and the DMOS
Set the threshold voltage. Here, for example,
It was implanted with an energy of 100 Kev and a dose of 1.2×10 ¹² /cm ² . This also applies to the high voltage DMOS region (I81 in FIG. 11). In this way, by forming a depletion MOSFET on the boundary surface around the wells created by the self-aligned separation (SAP) method between wells, it is possible to use a photomask on the same chip, as will be seen from the following explanation. It becomes possible to coexist the nonvolatile memory element MNOS and the high voltage DMOS without increasing the voltage.

(J) Next, after removing the photoresist film 80, a polycrystalline silicon (poly si) layer is formed on the SiO ₂ film to a thickness of about 0.35 μm and at about 580° C. by the CVD method.
Regarding the poly-Si formation method, we compared the normal pressure method and the low pressure method, but apart from the fact that the latter had better uniformity of film thickness, there were no particularly large differences in properties. Subsequently, polysi was doped with phosphorus by a diffusion method. The conditions in this case are, for example, P at 1000 °C for 20 min from a _POCl3 source.
was deposited on the poly si surface, diffused, and stretched for another 5 minutes to reduce the resistance of the poly si to about 15
Ω/□.

After this, the phosphorus glass formed on the poly-Si surface is removed by etching with a solution containing HF, etc., and then the photoresist is left only in a predetermined area by a photoetching method, and the remaining photoresist is removed by a plasma etching method. The poly Si was removed from areas other than those where the poly Si was removed, and a gate electrode and wiring were formed using the first layer of poly Si on the SiO ₂ film (J83 and 84 in FIG. 11).

Next, using the first polySi layers 83 and 84 as a mask, the gate oxide film 62 is selectively etched to partially expose the substrate surface as shown in FIG. 11J.

(K) After this, oxidation was performed at 850℃ for 20 minutes in a wet atmosphere, and about 40 nm was added to the exposed Si substrate surface.
200 nm thick SiO ₂ films 85 and 86 are formed on the polySi surface (K87 in FIG. 11 ₎ .
After this, the entire surface is etched with SiO ₂ film and approximately
By removing the 60nm _SiO2 film, polySi
Approximately 140 nm of SiO ₂ is left on top. In order to form a thick oxide film on polySi and a sufficiently thin oxide film on the Si substrate surface, polySi must contain at least 10 ²⁰ cm ^-3 of phosphorus. It is important to carry out the oxidation in a wet atmosphere at a temperature in the range of 600 to 1000°C.

(L) Next, the SiO ₂ film 85, 8 left on the poly Si
6 as a mask (i.e. SiO ₂ in this case
After lightly etching the exposed Si substrate surface with an etching solution containing NH ₃ −H ₂ O ₂ and HCl−H ₂ O ₂ , a thin oxide film of about 2 nm (K88 in Fig. 11) was deposited in N ₂ diluted O ₂ .
Formed by oxidation at 850℃ for 120 minutes, followed by
A Si ₃ N ₄ film 90 of about 50 nm is formed by CVD. Here, we compared the formation method of the formed Si ₃ N ₄ film using various methods as mentioned earlier, but in the end, we decided to use high temperature H ₂ annealing, which will be described later.
In either case, satisfactory characteristics could be obtained.

After this, _poly Si ( _second
After depositing a layer of about 0.3 .mu.m, it is processed by photoetching to form a second layer (second) polySi gate (L91 in FIG. 11). Subsequently, using the second layer polySi91 as a mask, 1×
Phosphorus ions are implanted into the silicon substrate at 10 ¹⁶ cm ^-2 and 90 KeV to form N-type semiconductor regions 92 to 100 such as sources and drains, and at the same time, the second layer poly
Si91 was also doped with phosphorus. At this time, since the first layer of polySi 83 and 84 has already been doped with phosphorus and the crystal grains have increased, phosphorus is implanted into the surface of the Si substrate under the first layer of polySi by implanting phosphorus ions. However, as mentioned above, there is a risk of
SiO ₂ films 85, 86 and 50 nm Si ₃ N ₄ film 90
This risk is eliminated because of the formation of

(M) Next, using the Si ₃ N ₄ film 90 formed under the second layer poly Si 91 as a mask, the second layer poly
For example, 850 Si91, 84 in a wet atmosphere.
After selective oxidation for 10 minutes at °C, the Si ₃ N ₄ film is selectively removed using this oxide film 102 as a mask.
In other words, the second layer of highly doped polySi
The upper oxide film protects it from the Si ₃ N ₄ etching solution. In this state, the breakdown voltage between the second layer poly Si gate and the source or drain (gate breakdown voltage)
After this, an oxidation treatment was performed at 850°C for 30 minutes in a wet atmosphere to form the second layer of polySi.
In addition to improving the gate breakdown voltage of the gate, the shape of the end portions of the first layer poly Si 83 and 84 gates has been improved to improve the breakdown voltage. In this state, as shown in FIG. 11M, the first layer polySi
On the layers 83, 84, approximately 0.3 μm SiO ₂ films 85, 8
6 is a SiO ₂ film 10 of about 0.2 μm on the second poly Si layer 91 and the source and drain n ⁺ diffusion layers.
2,104-112 are formed.

As mentioned above, a material that can withstand high temperatures, such as polysilicon, is used as the gate electrode in Figures 11J and K.
After forming a MOS device as shown in the figure, an oxide film is formed on this gate electrode using a low-temperature oxidation method, and the Si
The thin SiO ₂ film on the substrate (well) is removed, another SiO ₂ film is formed on the substrate, and Si ₃ N ₄ is added on top of it.
A film is provided, and a poly-Si gate electrode is partially formed on the film. Using the Si ₃ N ₄ film as a mask, the surface of the poly-Si gate is oxidized to form an oxide film. Using this oxide film as a mask, Si ₃ By adopting the method of removing the N ₄ film and forming the MNOS element as shown in FIG. 11M, the MNOS element is formed after the MOS, so that the deterioration of the characteristics of the MNOS element is reduced. Furthermore, since the selective oxidation method is applied to cover the gate of the MOS or MNOS with an oxide film, a device with favorable characteristics such as interlayer breakdown voltage or interlayer capacitance can be obtained.

In this way, an MNOS element is formed,
If the MNOS element forming part and the MNS element forming part are drawn using enlarged cross-sectional views corresponding to FIGS. 11L and 11M, they become as shown in FIGS. 30 to 33. That is, as shown in FIG. 30, Si ₃ N ₄ deposited on an extremely thin SiO ₂ film 88 of 10 nm or less.
A polysilicon layer 91 is partially formed on the film 90, impurities for forming sources and drains are introduced into the substrate surface using this polysilicon layer as a mask, and then a Si ₃ N ₄ film is formed as shown in FIG. The surface of this polysilicon layer 91 is oxidized as a mask, and a relatively thick oxide film (SiO ₂ ) is formed on the surface.
102 is formed. Furthermore, as shown in Figure 32,
Using this formed oxide film 102 as a mask,
The Si ₃ N ₄ film 90 is partially etched away. At this time, the thin SiO ₂ film 88 is also removed from the substrate surface, but as shown in FIG. 33, an oxide film (SiO ₂ ) 104, 10
form 5. Depending on the combination of gate electrode material and Si ₃ N ₄ film etching solution (or gas),
There is a risk that the gate electrode may also be etched, but after patterning the gate electrode as described above, oxidize the Si ₃ N ₄ film as a mask, cover the gate electrode 91 with an oxide film, and use this oxide film as a mask.
Since the Si ₃ N ₄ film is etched, this method can protect the fine gate electrode even when the gate electrode material is etched by the Si ₃ N ₄ etching solution. Furthermore, as shown in FIG. 33, the SiO ₂ film 102 on the polysilicon layer 91 and the SiO ₂ film 1 formed on the silicon substrate (well) surface
Since the Si ₃ N ₄ film 90 is completely covered with 04 and 105, by performing sufficient oxidation treatment in this way, a so-called protected gate structure can be formed in a self-aligned manner. Therefore, the gate breakdown voltage of the MNOS element can be improved, and the parasitic capacitance can be reduced.

Furthermore, as can be understood from FIGS. 30 to 33, MNOS elements and
By forming both the MOS element and the Si ₃ N ₄ film 90 only under the gate of the MNOS element, the oxidation treatment is performed to improve the gate breakdown voltage of the MNOS element as described above, as shown in FIG. In this way, the end of the gate electrode of the MOS element is also oxidized to form an inverted canopy structure, and the gate breakdown voltage of the MOS element can also be improved, and as a result, the gate breakdown voltage of both types of elements can be improved.

(N) Next, after completing the process shown in FIG. 11M, use the photoetching method to remove the underlying n ⁺ layer or
The SiO ₂ film is removed by etching at portions that need to be conductively connected to the poly Si layer, such as 106 and 112, and at predetermined portions that need to be contacted with the p-type well, such as 110 and 111. In this case, since the SiO ₂ film of approximately 0.3 μm is etched, only a portion of the oxide film in contact with the p-type well is etched, leaving a SiO ₂ film of approximately 0.3 μm.

(O) After this, after removing the photoresist film used in the above step, phosphorus phosphosilicate glass (hereinafter referred to as phosphorus glass) 20 with a P ₂ O ₅ concentration of about 1 mol% was deposited by CVD method, and then ,
Heat treated at 900℃ for 20 minutes in _H2 atmosphere,
We will refine the phosphor glass and improve the characteristics of MNOS devices.

Thereafter, the phosphor glass on the regions where it is necessary to make electrical connections with the above-mentioned n ⁺ layer, poly Si layer, p-type well layer, etc. is removed by photoetching. At this time, the holes 114 to 118 in the oxide film opened to the light and the holes in the phosphor glass are made to share at least a part of the area,
Expose that part of the Si substrate surface or poly Si surface. In this state, the parts 116, 117, and 60 that make contact with the p-type well have
Although the film thickness slightly decreases due to overetching during photoetching, it still
Since there is a SiO ₂ film of approximately 0.2 μm remaining, we further remove the remaining SiO ₂ film of approximately 0.2 μm by photoetching so that the hole in the photoresist is placed inside the hole in the phosphor glass that was previously drilled. Remove by etching.

When drilling a contact hole in a two-layer film of phosphor glass and SiO ₂ film, the etching speed of phosphor glass is fast and the etching speed of SiO ₂ is slow, so if the two-layer film is drilled at once, the hole size will become large. However, as can be seen from the explanation of FIGS. 11N and 11O and partially enlarged views of FIGS. 34 to 36, First, a hole 119 is formed in the SiO ₂ film 105 on the surface of the substrate by etching using a contact mask, and then a phosphor glass 120 is deposited, and then a phosphor glass 120 is formed so as to share at least a part of the contact hole 119. glass layer 12
By drilling a hole at 0 and providing the hole 125, the drilling can be performed with higher accuracy than the design value. In addition, the third
In Figure 6, the hole 125 of the phosphor glass is slightly shifted from the hole 119 of the SiO ₂ film, but in order to prevent the metal wiring such as aluminum from breaking, the hole 119 of the SiO ₂ film It is more desirable to form the phosphor glass hole 125 so as to expose even the end surface of the SiO ₂ film.

(P) Next, after removing the photoresist used above, an Al vapor deposition film is formed on the entire surface at about 300°C. The film thickness is approximately 0.8 μm.

Next, by photo-etching, a wiring pattern is formed on the Al film as shown in FIG.
After forming 2, 123 and 124 and removing the photoresist, in order to ensure contact between the above Al and the n ⁺ , poly Si or p-type well,
In order to reduce surface units, heat treatment is performed at approximately 450°C for 60 minutes in an H ₂ atmosphere.

By completing the steps (A) to (P) described in detail above, as shown in FIG. Together with the depletion type MOS element 84, an NPN bipolar transistor consisting of semiconductor regions 97, 11, and 1 can be formed in and on one semiconductor substrate 1 without increasing the number of special photomasks. In addition, 121 in the same figure is
The source or drain electrode of the EMOS element is
2 is the emitter electrode of the bipolar transistor,
123 constitutes the base electrode of the transistor and the electrode of the p-type well region 11, and 124 constitutes the electrode of the region 22 and the substrate.

FIG. 15 shows a plan view of the memory array before forming the phosphor glass layer, and FIG. 16 shows a plan view of the memory array after forming the aluminum wiring. Also, Figures 17, 18 and 19
The figures are a cross section taken along line AA in the plane of FIG. 16, and
A BB cross section and a CC cross section are shown.

The memory array is formed on a P-type well region 10a formed on an n-type silicon substrate 1.

In FIG. 15, the source region, drain region, and channel region of the MNOS of the memory cell and the MISFET for the switch are shown separated by dashed-dotted lines. P-type well area 1 other than the areas CH1 and CH2 surrounded by the dashed line above
A thick silicon oxide film 60 is formed on the surface of 0a.

On the surface of the P-type well region 10a, a plurality of polygons are formed on the surface of the P-type well region 10a in a direction crossing the areas CH1 and CH2 through a silicon oxide film, and are used as gate electrodes of MISFETs for switching of memory cells and as first word lines. Crystalline silicon layers W11, W21, W31,
W41 is placed.

Similarly, a plurality of polycrystalline silicon layers W12, W22, W32, and W42 are arranged, which serve as gate electrodes of the MNOS of the memory cells and serve as second word lines.

Areas not covered by each of the above polycrystalline silicon layers
An n-type impurity is introduced into the surface of the P-type well region 10a in CH1 and CH2 by the manufacturing method described above with reference to FIG. An n ⁺ type region is formed.

In area CH1, n ⁺ type region 92a, polycrystalline silicon layers W11, W12, and n ⁺ type region 94
a constitutes a first memory cell. That is,
The n ⁺ type region 92a constitutes the drain region of the switching MISFET, and the polycrystalline silicon layer W11 constitutes its gate electrode. Further, the polycrystalline silicon layer W12 constitutes the gate electrode of MNOS, ^and
Mold region 94a constitutes its source region.

In the area CH1, the n ⁺ type region 92b, the polycrystalline silicon layers W21, W22 and the n ⁺ type region 94b adjacent to the first memory cell are
constitutes a memory cell. That is, the above 92
b, W21, W22 and 94b are the drain region of the switch MISFET, its gate electrode,
Configures the gate electrode of MNOS and its source region.

Similarly, in the area CH1, 94c,
W32, W31, and 92c constitute a third memory cell, and 92d, W41, W42, and 94d constitute a fourth memory cell.

First to fourth memory cells are also formed in the area adjacent to the area CH1, although no symbols are attached thereto.

Each memory cell formed in the area CH1 constitutes a first memory cell column and similarly forms the area CH1.
Each memory cell formed in CH2 constitutes a second memory cell column.

Polycrystalline silicon layer W11 as the first word line
As shown in FIG. 15, a thick silicon oxide film 60
It has extended portions W11a to W11c extending across the bottom of the polycrystalline silicon layer W12 at the top.

Since the polycrystalline silicon layer W12 constitutes the second word line as described above, it receives a high voltage such as +25V when writing storage information. Therefore, P under the polycrystalline silicon layer W12
A parasitic channel may be induced on the surface of the mold well region 10a. Polycrystalline silicon layer W11
constitutes the first word line and receives a low voltage signal such as +5V mentioned above. Therefore, the parasitic channel induced on the surface of the P-type well region 10a under the polycrystalline silicon layer W12 is caused by the extensions W11a to W11 of the polycrystalline silicon layer W11.
11c, respectively.

As a result, the memory cells in the areas CH1 and CH2 are electrically coupled to each other by the parasitic channel, and as a result, it is possible to prevent an undesirable operation such as information not being written to the selected memory cell. I can do it.

A phosphor glass layer 120 is formed on the surface of the memory array shown in FIG. 15 by the manufacturing method explained in FIG.
is formed, and then the phosphorus glass layer 120 and the oxide film thereunder are selectively removed to provide openings CNT1 to C5 (see FIG. 6) that expose the n ⁺ type region.

Next, aluminum is deposited and selectively etched to form aluminum wiring layers ED1, ED2, D1 and D2 as shown in FIG.

The wiring layer ED1 has the above-mentioned open hole CTN.
1. In CNT3 and CNT5, n ⁺ type regions 94a, 94b, 94c and 9 serve as source regions of MNOS in the first to fourth memory cells.
4d (see Figure 15). Therefore, this wiring layer ED1 constitutes a reference potential line of the memory array.

The wiring layer D1 has the above-mentioned open-hole CNT2 and
In the CNT4, n ⁺ type regions 92a, 92b, 92c and 9 serve as drain regions of switch MISFETs in the first to fourth memory cells.
Contact 2d. Therefore, this wiring D1 constitutes a digit line of the memory array.

Similarly, the wiring layers ED2 and C2 constitute other reference potential lines and digit lines, respectively.

In the above memory array, as shown in FIG. 15, the arrangement of MNOS and switching MISFET in memory cells in the same memory column is alternately reversed. Therefore, for example, 92a and 92b, 94
The n ⁺ type regions of adjacent memory cells can be shared as shown in b and 94c, and the dimension in the column direction can be made smaller than in the case where the n ⁺ type regions for each memory cell are formed independently. be able to.

Furthermore, as shown in FIG. 16, the aluminum wiring layers ED1, ED2, D1, and D2 are inclined with respect to the direction in which the areas CH1 and CH2 extend so that the areas CH1 and CH2 where memory cells are formed also serve as wiring areas. Therefore, the dimension in the row direction, that is, in the lateral direction of the paper surface, can be made smaller than in the case where the wiring area is set independently of the above-mentioned areas.

In addition, it can be used as a reference potential line and digit line.
Since an aluminum wiring layer is used as shown in the figure instead of using a semiconductor such as an n ⁺ type semiconductor wiring region, its resistance can be sufficiently reduced. The reduction in interconnect resistance allows the memory array described above to operate at high speeds.

Fig. 20 shows the pattern of the unit X decoder before forming the phosphor glass layer, and Fig. 21 shows the pattern after forming the aluminum wiring layer in the portion corresponding to Fig. 20 above. .

Since each of the unit X decoders is provided corresponding to a memory cell row of the memory array, each of the unit X decoders is taken into account so as not to increase the pitch of the memory cell row. for that,
Although not particularly limited, as explained below, the second
In FIGS. 0 and 21, the combination of two unit X decoders is substantially one unit.

In FIG. 20, the X decoder is formed on a P-type well region 11 formed on an n-type silicon substrate 1. In FIG. The region for forming each MISFET is surrounded by a dashed line in the figure. A thick silicon oxide film 60 is formed on the surface of the P-type well region 11 other than the above-mentioned region, as described above.

On the silicon oxide film 60 and the gate oxide film on the region surrounded by the dashed line, first-layer polycrystalline silicon layers W11, W21, a0 are formed in a pattern as shown by the combination of dots and solid lines. ,a0′,
a1 and a1' are formed. In the region surrounded by the dashed line, an n ⁺ type region is formed by the manufacturing method shown in FIG. 11 above except under the polycrystalline silicon layer.

In Fig. 20, the channel region of the enhancement type MISFET is formed under the polycrystalline silicon layer in the area marked with diagonal lines on the lower left and the lower right. This means that a channel region of a depletion-type MISFET is formed under the polycrystalline silicon layer where these are combined.

In the upper half of the paper ⁱⁿ FIG ^.
MISFETQ3 is configured, and enhancement type MISFETQ4 is configured by n ⁺ type region W11c, polycrystalline silicon layer a0', and n ⁺ type region GNDa,
n ⁺ type region W11c, polycrystalline silicon layer a1' and n ⁺
Enhancement type by type area GNDb
MISFETQ5 is configured.

In the lower half of the paper in Figure 20, the same
MISFETQ3', Q4' and Q5' are configured.

As shown in FIG. 21, a phosphor glass layer 120 is formed on the surface of the decoder shown in FIG. 20, and then holes are formed in the phosphor glass layer and the oxide film thereunder by selective etching.

Various aluminum wiring layers are formed by aluminum vapor deposition and selective etching as shown in FIG. In the figure, the openings provided in the phosphor glass layer and the insulating film such as the oxide film are indicated by x marks. In the X-marked portions, each of the aluminum wiring layers contacts the underlying polycrystalline silicon layer or semiconductor region.

In FIG. 21, the wiring layer W11a is a short circuit wiring layer, and MISFETQ3 (see FIG. 20)
The polycrystalline silicon layer W11 serving as the gate electrode of the MISFET Q4 and the n ⁺ type region W11b serving as the source region and the common drain region of the MISFETs Q4 and Q5 are short-circuited. The wiring layer VCC is a wiring layer for power supply, and MISFETQ3 and Q3' (see Figure 20)
The n ⁺ type region as a common drain region is in contact with VCCa. The wiring layer GND is a wiring layer for grounding, and is in contact with the n ⁺ type region GNDa as a common source region of MISFETQ4, Q4'. In addition, as shown in Fig. 20, the n ⁺ type region GNDb as the common source region of MISFETQ5, Q5' is the above n ⁺ type region.
Connected to GNDa.

The wiring layers a0 and 0 are a pair of wiring layers that receive address signals of opposite phases to each other, and a selected one of them, that is, a0 in the illustrated case, contacts the polycrystalline silicon layer a0', and also contacts a0'. are doing.

Similarly, wiring layers a1 and a1 are a pair of wiring layers that receive other address signals having opposite phases to each other. In the illustrated case, wiring layer a1 is in contact with polycrystalline silicon layer a1', and wiring layer 1 is in contact with polycrystalline silicon layer a1''.

As described above, a unit decoder such as the X decoder XD1 of FIG. 1 is configured in the upper half of FIG. 12, and another unit decoder such as XD2 is configured in the lower half.

The unit X decoders are arranged corresponding to memory cell rows. Therefore, the wiring layers VCC, GND, a
0, 0, a1, 1, etc. are common to a plurality of unit X decoders.

22A and 22B show the unit write circuit patterns before forming the phosphor glass layer, and FIGS. 23A and 23B show the patterns shown in FIGS. 22A and 22B, respectively. The pattern after forming the aluminum wiring layer in the portion corresponding to B is shown. As a pattern, the right end of FIG. 22A is connected to the left end of FIG. 22B, and similarly, the right end of FIG. 23A is connected to the left end of FIG. 23B.

The patterns in FIGS. 22A, B and 23A, B are shown using the same notation as in FIGS. 20 and 21.

For the same reason as the X decoder, the two unit write circuits are essentially one unit.

Polycrystalline silicon layers W11 and W21, which serve as word lines, have been extended onto the P-type well region 10b indicated by the two-dot chain line for configuring the memory array through the thick silicon oxide film 60, and are connected to aluminum interconnections, respectively. MISFETQ1 formed in the P-type well region 11 via layers W11C and W21C
5, Drain region W11d, W21d of Q15'
come into contact with.

Note that the P-type well region 10b is in contact with an aluminum wiring layer e to which a signal from an erasing circuit (see FIG. 1) is applied as shown.

A signal from a control line We (see FIG. 1) is applied to the polycrystalline silicon layer We serving as the gates of the MISFETs Q15 and Q16.

Polycrystalline silicon layer W1 as second word line
2, W22 are aluminum wiring layers W1, respectively.
2a and W22a, MISFETQ1 formed in the P-type well region 11 indicated by the two-dot chain line
6 and Q17 common drain region W12b,
It contacts the common drain region W22b of MISFET Q16' and Q17', and also contacts the polycrystalline silicon layers W12c and W22c, respectively.

Above MISFETQ16, Q17, Q16', Q1
Polycrystalline silicon layer VCC as common gate of 7'
A power supply voltage of +5V is applied to.

Common drain region of MISFETQ18 and Q18
GNDa is in contact with an aluminum wiring layer GND which is set to a ground potential.

The polycrystalline silicon layer W12c is used as the gate electrode of the MISFET Q19 formed in the independent P-type well region 11r, and the aluminum wiring layer W12
Source region W1 of MISFETQ19 by d
2e and the P-type well region 11r.

Similarly, a polycrystalline silicon layer W22c is formed in another independent P-type well region 11s.
It is used as the gate electrode of MISFETQ19', and is connected to the above by the aluminum wiring layer W22d.
It is in contact with the source region W22e of MISFETQ19' and the P-type well region 11s.

The MISFETs Q19 and Q19' have the structure as explained in FIG. 9 or FIG. 11 above. The above extended on the n-type silicon substrate 1
Common drain region of MISFETQ19 and Q19'
VPPa is in contact with an aluminum wiring layer VPP to which a high voltage for writing and erasing is applied.

The MISFETs Q15 to Q19 constitute, for example, the circuit WA1 in FIG. 1, and the MISFETs Q15' to Q19' constitute another circuit WA2.

The unit write circuits shown in FIGS. 22A and 22B and 23A and 23B are arranged in correspondence with the memory cell rows, similarly to the aforementioned X decoder.

FIG. 24 shows the pattern of the Y gate before forming the phosphor glass layer, and FIG. 25 shows the pattern of the portion corresponding to FIG. 24 after forming the aluminum wiring layer.

Polycrystalline silicon layer as common digit line
An aluminum wiring layer CDa for connecting unit gates in parallel is in contact with CD.

The above aluminum wiring layer CDa is MISFETQ1
It is in contact with the common drain region CDb of Q1 and Q13. Polycrystalline silicon layers Y1a, Y2a serving as gate electrodes of MISFETs Q11, Q13 are in contact with aluminum wiring layers Y1, Y2, which receive outputs from Y decoders YD1, YD2 (see FIG. 1), respectively.

The source region of MISFET Q11 and the drain region of Q12 are a common n ⁺ type region D1b, and similarly
The source region of MISFET Q13 and the drain region of Q14 are a common n ⁺ type region.

A power supply voltage of +5V is supplied to the polycrystalline silicon layer VCC serving as the gate electrode of the MISFETs Q12 and Q14.

The source region D1a of MISFETQ12 is in contact with an aluminum wiring layer D1 as a digit line, and similarly the source region D2a of MISFETQ14 is in contact with an aluminum wiring layer as another digit line.

26A and 26B show the patterns of the write inhibit circuit before the phosphor glass layer is formed, and FIGS. 27A and 27b show the patterns after the aluminum wiring layer is formed. 26th above
The pattern of the part corresponding to FIG. A and FIG. 26B is shown. Note that as a pattern, the lower end of FIG. 26A is connected to the upper end of FIG. 26B, and similarly, the lower end of FIG.
The lower end of Figure A connects to the upper end of Figure 27B.

As shown in Figure 6, the wiring area WIR is placed between the memory array and the write inhibit circuit, so
Although not particularly limited, the aluminum wiring layer ED as a reference potential line explained in FIGS. 15 and 16
1, ED2 are polycrystalline silicon layers ED1a, ED formed simultaneously with the polycrystalline silicon layer of each MISFET.
2a, respectively. Above wiring area
In WTR, the polycrystalline silicon layer ED1
a, Various aluminum wiring layers are formed on ED1a via an oxide film and a phosphorus glass layer.

Note that FIGS. 26A and B and FIGS. 27A and B are shown using the same notation as the previous figures. Therefore, the description of the structure of the write inhibit circuit in FIGS. 26A, B and 27A, B will be omitted.

According to this invention, as shown in FIG. 6, since the decoder and the write circuit are placed across the memory array, the operating speed, particularly the read operating speed, can be increased. On the other hand, if the decoder and write circuit are placed on one side of the memory array, for example, the wiring from the decoder to the memory cell becomes long, and multiple circuits are placed on one side of the memory array, so the semiconductor integrated circuit The number of well-known cross-wiring locations will increase. As a result, the signal transmission characteristics of the wiring paths that supply signals to the memory array deteriorate, and the operating speed is limited.

As mentioned above, when placing the decoder and write circuit across the memory array, the pitch between the unit decoder and write circuit can be made relatively small, so the size of the memory array does not have to be limited by these circuits. Become good.

Furthermore, since a gate or decoder and a write inhibit circuit are placed across the memory array, high-speed operation can be achieved for the same reason as above.

As mentioned above, the configuration in which a decoder and a write circuit are placed across a memory array, or the configuration in which a gate or a decoder and a write circuit are placed across a memory array, are different from other configurations that use a write circuit or a write-protection circuit. It can be applied to various types of storage devices.

According to the present invention, the well region is used as described above, and this well region can be effectively used for a high voltage circuit.

Enhancement type MISFETQ3 shown in Figure 1 above
In the voltage divider circuit in which MISFETQ37 to Q39 are connected in series, the highest voltage is applied to the drain of MISFETQ37, so if MISFETQ37 is destroyed by high voltage, this destroyed MISFETQ3
A high voltage will be applied to Q38 via Q7.
As a result, the MISFETs connected in series are destroyed one after another. However, when the highest voltage above is applied
If MISFETQ37 is made to have a structure that utilizes a well region as described above to achieve a high breakdown voltage, the above-mentioned breakdown can be prevented even if the other MISFETQ38 to Q39 have a normal structure. The voltage divider circuit as described above can be used in circuit devices other than the memory circuit device of the embodiment.

Similarly, circuits such as the erase circuit and write inhibit voltage generation circuit shown in FIG. 1 can be used for other purposes.

[Brief explanation of drawings]

FIG. 1 is a circuit diagram of a semiconductor memory circuit, FIGS. 2, 3, and 4 are operation timing charts of the circuit in FIG. 1, FIG. 5 is a block diagram of a semiconductor memory circuit, and FIG. is a plan view of the semiconductor memory circuit device, FIG. 7 is a plan view of a semiconductor substrate forming the semiconductor memory circuit device of FIG. 6, and FIG. 8 is a plan view of the semiconductor memory circuit device of FIG.
9 is a cross-sectional view of the semiconductor region in which the MISFET is formed, and FIG. 10 is a cross-sectional view of the semiconductor substrate in which the bipolar transistor is formed.
1A to 1O are cross-sectional views of a semiconductor substrate in each manufacturing process of a semiconductor memory circuit device, and FIG.
Cross-sectional view of MNOS, Figure 13 is the MNOS in Figure 12
14 is an equivalent circuit diagram of a memory cell, FIG. 15 is a plan view of the memory array before forming the phosphorus glass layer, and FIG. 16 is a diagram of the memory array after forming the aluminum wiring layer. Plan, 1st
7, 18, and 19 are cross-sectional views of the A-A', B-B', and C-C' sections of FIG. 16, respectively, and FIG. 20 is the cross-sectional view of the section before forming the phosphorus glass layer. FIG. 21 is a plan view of the X decoder, and FIG. 22 is a plan view of the X decoder after forming the aluminum wiring layer.
Figures A and 22B are plan views of the write circuit before forming the phosphor glass layer, Figures 23A and 23
Figure B is a plan view of the write circuit after forming the aluminum wiring layer, Figure 24 is a plan view of the Y gate before forming the phosphor glass layer, and Figure 25 is a plan view of the Y gate after forming the aluminum wiring layer. 26A and 26B are plan views of the gate, FIG. 26A and FIG.
7A and 27B are plan views of the write inhibit circuit after forming the aluminum wiring layer, and FIG.
Figures 30 and 29 are phase diagrams showing the concentration distributions of phosphorus and boron impurities, respectively, at the Si-SiO ₂ interface.
38 and 34 to 36 are cross-sectional views of the main parts of the semiconductor device for each manufacturing process. MA...Memory array, XD1, XD2...X decoder, YG0...Y gate, YD1, YD2...
Y decoder, WA1, WA2...Writing circuit,
IHA1...Write inhibit circuit, IHA2...Write inhibit voltage generation circuit, ERS...Erase circuit,
CRL...Control circuit, IOS...Sense circuit, IOR...
...output buffer circuit, IOW...data input circuit,
B0 to B10...Input buffer circuit.

Claims (1)

[Claims] 1. A method for manufacturing a semiconductor device comprising the following steps: (a) forming an oxidation-resistant first film on the main surface of a semiconductor substrate; (b) forming a first oxidation-resistant film on the main surface of the semiconductor substrate; (c) forming a second film on the first film having a pattern covering a second surface area excluding the first surface area; (c) covering the main surface of the pattern of the second film; A first plate is placed on the semiconductor substrate corresponding to the unattached portion.
(d) forming a first semiconductor region in the second film in a self-aligned manner by introducing conductivity-type impurities;
The main surface of the semiconductor substrate is oxidized using a first film formed by etching and removing the first film.
(e) using the oxide film as a mask to introduce impurities of a second conductivity type into the semiconductor substrate through the main surface; forming a second semiconductor region in a self-aligned manner in the semiconductor region; (f) forming selected portions of each of the first and second semiconductor regions of the semiconductor substrate as an element formation region; A step of forming a semiconductor region for an element in the element formation region. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the step (f) comprises the following step: (g) Selection of using an oxidation-resistant third film. forming a field oxide film on the main surface of the semiconductor substrate by oxidation so as to surround an element formation region in the first and second semiconductor regions; 3. The method for manufacturing a semiconductor device according to claim 1, wherein the step (f) comprises the following step: (g) In the first semiconductor region, the main surface thereof is (h) forming a gate electrode in the element formation region surrounded by the field oxide film via a gate insulating film; (i) by introducing impurities of a second conductivity type into a portion of the main surface of the semiconductor substrate defined by the field oxide film and the gate electrode;
Step of forming source and drain regions. 4. The method of manufacturing a semiconductor device according to claim 3, wherein in the step (g), impurities of a first conductivity type are introduced in advance into the region where the field oxide film is to be formed.