JPH04209502A - Manufacture of resistor - Google Patents
Manufacture of resistorInfo
- Publication number
- JPH04209502A JPH04209502A JP2400447A JP40044790A JPH04209502A JP H04209502 A JPH04209502 A JP H04209502A JP 2400447 A JP2400447 A JP 2400447A JP 40044790 A JP40044790 A JP 40044790A JP H04209502 A JPH04209502 A JP H04209502A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- compound containing
- cobalt
- film
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 6
- 239000010941 cobalt Substances 0.000 claims abstract description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 5
- 239000003960 organic solvent Substances 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 6
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 6
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 4
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 17
- 238000005336 cracking Methods 0.000 abstract description 5
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- 239000000203 mixture Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 5
- 150000002736 metal compounds Chemical class 0.000 description 4
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
[00011 [00011
【産業上の利用分野]本発明は各種エレクトロニクス機
器に使用される抵抗体の製造方法に関するものである。
[0002]
【従来の技術】酸化ルテニウムおよびその化合物は化学
的に安定であって、それを導電性主成分とする抵抗体は
広域に利用されている。その構造は、導電性粒子がガラ
スなど絶縁粒子のマトリックス中に網目状に配置された
形であり、抵抗値はそれら二者の比率を変化させること
によって決まる。この抵抗体は印刷と焼成によって低コ
ストで製造することができるが、前述のような複雑な構
造であるため、ノイズ特性が一25dBから25dBと
全領域に渡って安定しておらず、金属皮膜などを用いた
、いわゆる薄膜抵抗体に比べて劣っている。
[0003]そこで、最近、低コストでかつノイズ特性
の優れた抵抗体として、構造中にルテニウムを含有する
化合物、およびその他の抵抗温度特性を改善するための
金属化合物を主成分とする溶液を基板上に塗布、焼成す
ることによって形成される、いわゆる熱分解法によって
絶縁基板上に金属酸化物の混合体を形成するとノイズ特
性の良好な抵抗体が得られることを見いだした。
[00041図2は、このようにして得られた抵抗体を
用いた部品の一例である角板型チップ固定抵抗器の断面
図である。図2において、絶縁基板4上にアンダーグレ
ーズガラス3を形成し、このアンダーグレーズガラス3
の両側に銀−パラジウム電極2を形成し、このアンダー
グレーズガラス3上に両端部が銀−パラジウム電極2の
一部に重なるように抵抗体1を形成したものである。た
だし、図2において抵抗体を保護する目的のオーバーグ
レーズガラスについては省絡している。
[0005][Industrial Field of Application] The present invention relates to a method for manufacturing resistors used in various electronic devices. [0002] Ruthenium oxide and its compounds are chemically stable, and resistors containing them as a main conductive component are widely used. Its structure is such that conductive particles are arranged in a mesh pattern in a matrix of insulating particles such as glass, and the resistance value is determined by changing the ratio of the two. This resistor can be manufactured at low cost by printing and firing, but due to its complicated structure as mentioned above, the noise characteristics are not stable over the entire range from 125 dB to 25 dB, and the metal film It is inferior to so-called thin film resistors using, for example, thin film resistors. [0003] Therefore, recently, as a low-cost resistor with excellent noise characteristics, solutions containing compounds containing ruthenium in the structure and other metal compounds to improve resistance temperature characteristics as main components have been used as substrates. It has been discovered that a resistor with good noise characteristics can be obtained by forming a metal oxide mixture on an insulating substrate by a so-called pyrolysis method, in which the metal oxide mixture is formed by coating and firing the metal oxide mixture on the insulating substrate. [00041] FIG. 2 is a sectional view of a square plate type fixed chip resistor, which is an example of a component using the resistor obtained in this manner. In FIG. 2, an underglaze glass 3 is formed on an insulating substrate 4, and this underglaze glass 3 is
Silver-palladium electrodes 2 are formed on both sides of the resistor 1, and a resistor 1 is formed on the underglaze glass 3 so that both ends partially overlap the silver-palladium electrodes 2. However, in FIG. 2, the overglaze glass for protecting the resistor is omitted. [0005]
【発明が解決しようとする課題】上記の方法によって形
成された抵抗体層は微細な結晶粒からなっているが、前
記低抵抗用の組成では低抵抗を得るために膜厚を増加し
200OA以上の厚みとすると、図2に示すように抵抗
体1に膜われ1aが生じる。そのために低抵抗領域、す
なわち面積抵抗値10〜200ohm/sq、の抵抗体
を製造することができないという課題を有していた。
[0006]本発明の目的は以上のような欠点を除去し
、ノイズ特性の良好な低抵抗領域の抵抗体の製造方法を
提供しようとするものであります。
[0007][Problems to be Solved by the Invention] The resistor layer formed by the above method is composed of fine crystal grains, but in the composition for low resistance, the film thickness is increased to obtain a low resistance of 200 OA or more. When the thickness is set to , a film crack 1a occurs in the resistor 1 as shown in FIG. Therefore, there was a problem in that it was impossible to manufacture a resistor in a low resistance region, that is, a sheet resistance value of 10 to 200 ohm/sq. [0006] The object of the present invention is to eliminate the above-mentioned drawbacks and provide a method for manufacturing a resistor in the low resistance region with good noise characteristics. [0007]
【課題を解決するための手段】上記課題を解決するため
本発明は、構造中にルテニウムを含有する化合物と、チ
タンを含有する化合物、マンガンを含有する化合物、コ
バルトを含有する化合物とを有機溶媒に溶解した溶液を
用い、この溶液を絶縁基板上に塗布し焼成する操作を2
度以上繰り返し行うことにより、ルテニウムの酸化物と
、チタンの酸化物、マンガンの酸化物、コバルトの酸化
物のうちのいずれか一つ、またはチタンの酸化物とコバ
ルトの酸化物とからなる抵抗体を形成することを特徴と
するものである。
[o o o 8][Means for Solving the Problems] In order to solve the above problems, the present invention provides a method for combining a compound containing ruthenium in its structure, a compound containing titanium, a compound containing manganese, and a compound containing cobalt in an organic solvent. Using a solution dissolved in
By repeating this process more than once, a resistor made of ruthenium oxide, any one of titanium oxide, manganese oxide, and cobalt oxide, or titanium oxide and cobalt oxide It is characterized by forming. [o o o 8]
【作用】本発明によれば、膜割れが発生しない厚みの膜
を形成し、それを積層することによって抵抗体の割れを
防止することができる。そのため膜厚が増大し、低抵抗
領域の抵抗体を得ることができる。
[0009]According to the present invention, cracking of the resistor can be prevented by forming a film having a thickness that does not cause film cracking and stacking the films. Therefore, the film thickness increases, and a resistor in a low resistance region can be obtained. [0009]
【実施例】以下、本発明の一実施例の抵抗体の製造方法
を説明する。
[00101
(実施例1)
(表1)に示すペーストについて金属化合物1〜3を表
示した組成比で混合して総量10gを4−メチル2−ペ
ンタノン100gに混合溶解して粘度0.5Pa−8の
塗布液とした。
[00111[Embodiment] A method of manufacturing a resistor according to an embodiment of the present invention will be described below. [00101 (Example 1) For the paste shown in (Table 1), metal compounds 1 to 3 were mixed in the indicated composition ratio, and a total amount of 10 g was mixed and dissolved in 100 g of 4-methyl 2-pentanone to obtain a viscosity of 0.5 Pa-8. It was made into a coating liquid. [00111
【表1]
[0012]そして各試料について、それぞれバリウム
ホウケイ酸ガラス(コーニング社製059)基板にスピ
ンコータを用いて塗布し、乾燥した後、大気中において
電気炉で熱分解し、焼成して膜を形成した。この時の焼
成温度を700℃とした。さらにこの膜の上に上記塗布
液を用いて、同操作によって膜を積層し抵抗とした。但
し、試料ベートNo、1〜5.16〜20はスピンコー
タの回転数を3000回転、積層数を3層、6から15
は2000回転、4層とした。このようにして得られた
抵抗体の膜厚と面積抵抗値とをそれぞれ(表2)に示す
。
[0013]
【表2】
[0014]これらの試料ペーストN011〜20を使
用して作った抵抗体を形成した基板を幅0.8mmの短
冊状にダイヤモンドカッターにて切断し、市販の金ペー
ストを用いて厚さ1μm以下の電極を形成して、0.8
mmX0.8mmの大きさの抵抗を有する抵抗値を作成
した。さらに抵抗体表面に市販のガラスベースを塗布し
て焼き付けることによって保護ガラス層を設け、また金
電極にニッケルメッキ、半田メツキをして、これらの抵
抗器の電流ノイズをファンチック(Quan−Tech
)社製の電流ノイズ測定器を使って測定した。この際の
印加電圧は抵抗器の定格電力をO,IWとして算出した
。この結果を第2表に示す。クラックなどの膜の構造欠
陥は電流ノイズの値で知ることができることから、第2
表からこれらの抵抗体は膜割れを生じていないことが明
らかとなった。
[0015]なお、抵抗体の面積抵抗値は焼成温度を変
化させることによって変えることができ、それを低下さ
せると抵抗値は減少し、上昇させると抵抗値は増大する
。また得られた抵抗体は塗布液中の金属化合物の濃度お
よび塗布液の粘度によってもその膜厚が変わり、それに
応じて面積抵抗値が変化する。
[0016]このように本発明の抵抗体は化学組成、膜
厚および処理温度を調整することによって幅広い抵抗値
を実現することができるが、本実施例おいては、全ての
試料について一定溶液粘度の塗布液を基板上に塗布し、
かつ一定の焼成温度で抵抗体を形成したが、適宜前記条
件を選べば目的の抵抗値を得ることができる。
[00171以上のように本実施例の結果から、本発明
の抵抗体が低抵抗領域においても非常に優れたノイズ特
性を有することがわかった。
[0018]
(実施例2)
次に本発明の池の実施例を説明する。実施例1と同じよ
うに(表1)に示す金属化合物を表示した組成比で混合
して総量5gをα−テルピネオール100gに溶解し、
この溶液に2量化ロジシを添加し、140℃以上の温度
で加熱還流して2量化ロジンを溶解させてペーストを作
製した。
[00191図1に本発明により作製した角板型チップ
固定抵抗器を示す。図において、5は絶縁基板、6はア
ンダーグレーズガラス、7は一対の@極、8は抵抗体、
9はオーバーコートグレーズガラスである。以下この角
仮型チップ固定抵抗器の製造方法について説明する。分
割のためのスリットが設けられた96%アルミナ基板5
上にアンダーグレーズガラスとして軟化点750℃のガ
ラスペーストをスクリーン印刷し、900℃で焼き付け
た後、電極7として銀−パラジウムペーストを同様な方
法でアンダーグレーズガラス6の両端に前述の各試料ペ
ーストN011〜20をスクリーン印刷し、乾燥した後
、大気中700℃で熱分解して膜を形成する。次にこの
膜の上に上記ペーストを用いて同方法によって膜を積層
し、抵抗体8を形成した。但し、積層数すなわち膜を形
成するための操作の回数は試料ペーストNo、1〜**
3,6〜8.11〜13.16〜20を3回、No。
4、 9. 14を2回、No、5.10.15を4回
とした。さらにこの抵抗体8の上面に保護用のアンダー
グレーズガラス9を印刷、焼成によって形成し、最後に
分割して端面@極を焼き付けて、本実施例の角板型チッ
プ固定抵抗器を作製した。これらの各チップ抵抗器に対
し実施例1と同様の測定を行ない、抵抗体の膜厚とそれ
を使った抵抗器の面積抵抗値と電流ノイズの結果を(表
3)に示す。
[00201[Table 1] [0012] Each sample was coated on a barium borosilicate glass (059 manufactured by Corning) substrate using a spin coater, dried, thermally decomposed in an electric furnace in the atmosphere, and baked to form a film. was formed. The firing temperature at this time was 700°C. Furthermore, a film was laminated on top of this film using the above coating liquid and the same procedure to form a resistor. However, for sample bait No. 1 to 5.16 to 20, the rotation speed of the spin coater is 3000 rotations, the number of laminated layers is 3, and 6 to 15.
The rotation speed was 2000 rpm and there were 4 layers. The film thickness and area resistance value of the resistor thus obtained are shown in Table 2. [0013] [Table 2] [0014] The substrates on which the resistors made using these sample pastes N011 to 20 were formed were cut into strips with a width of 0.8 mm using a diamond cutter, and a commercially available gold paste was cut into strips with a width of 0.8 mm. to form an electrode with a thickness of 1 μm or less using
A resistance value having a resistance size of mm×0.8 mm was created. Furthermore, a protective glass layer is provided by coating and baking a commercially available glass base on the surface of the resistor, and the gold electrode is nickel plated and soldered to reduce the current noise of these resistors.
Measured using a current noise measuring device manufactured by ) company. The applied voltage at this time was calculated using the rated power of the resistor as O and IW. The results are shown in Table 2. Since structural defects in the film such as cracks can be detected from the current noise value, the second
It is clear from the table that these resistors did not suffer from film cracking. [0015] Note that the sheet resistance value of the resistor can be changed by changing the firing temperature; when it is lowered, the resistance value decreases, and when it is raised, the resistance value increases. Furthermore, the film thickness of the obtained resistor changes depending on the concentration of the metal compound in the coating liquid and the viscosity of the coating liquid, and the sheet resistance value changes accordingly. [0016] As described above, the resistor of the present invention can achieve a wide range of resistance values by adjusting the chemical composition, film thickness, and processing temperature. However, in this example, a constant solution viscosity was used for all samples. Apply the coating liquid on the substrate,
Although the resistor was formed at a constant firing temperature, the desired resistance value can be obtained by appropriately selecting the above conditions. [00171 As described above, from the results of this example, it was found that the resistor of the present invention has very excellent noise characteristics even in the low resistance region. [0018] (Example 2) Next, an example of the pond of the present invention will be described. In the same manner as in Example 1, the metal compounds shown in Table 1 were mixed in the indicated composition ratio, and a total of 5 g was dissolved in 100 g of α-terpineol.
Dimerized rosin was added to this solution, and the mixture was heated under reflux at a temperature of 140° C. or higher to dissolve the dimerized rosin to prepare a paste. [00191 FIG. 1 shows a square plate type fixed chip resistor manufactured according to the present invention. In the figure, 5 is an insulating substrate, 6 is underglaze glass, 7 is a pair of @ poles, 8 is a resistor,
9 is overcoat glaze glass. A method of manufacturing this square temporary chip fixed resistor will be described below. 96% alumina substrate 5 with slits for division
A glass paste with a softening point of 750°C was screen-printed on top of the underglaze glass as an underglaze glass, and after baking at 900°C, a silver-palladium paste was applied as an electrode 7 on both ends of the underglaze glass 6 in the same manner as above for each sample paste N011. ~20 is screen printed, dried, and then pyrolyzed at 700°C in the atmosphere to form a film. Next, a film was laminated on this film by the same method using the above paste to form the resistor 8. However, the number of laminations, that is, the number of operations to form a film, depends on the sample paste No. 1 to **
3, 6-8. 11-13. 16-20 three times, No. 4, 9. 14 twice, No. 5.10.15 four times. Further, a protective underglaze glass 9 was formed on the upper surface of this resistor 8 by printing and firing, and finally it was divided and the end faces @poles were baked to produce the square plate type fixed chip resistor of this example. The same measurements as in Example 1 were carried out for each of these chip resistors, and the results of the film thickness of the resistor, the sheet resistance value, and the current noise of the resistor using the resistor are shown in (Table 3). [00201
【表3]
[00211この結果よりペーストの組成及び膜厚に応
じた面積抵抗値を有する抵抗器得られることがわかった
。また、ノイズ特性に関してはいずれの試料も良好であ
った。以上のように実施例1および2によって作製した
抵抗体のノイズ特性が良好であるのは、図2に示すよう
な抵抗体1の膜割れ1aが発生しないためである。
[0022]なお、本実施例において抵抗体の利用例と
して角板型チップ抵抗器のみ記載したが、本実施例で作
製したペーストを用いてハイブリッドICや抵抗ネット
ワーク、RCネットワーク、各種可変抵抗器などの抵抗
体、およびサーマルヘッドの発熱抵抗体に用いることが
でき、これらの素子は前述のチップ抵抗器と同等の性能
を有するものが得られる。
[0023]
【発明の効果】以上のように本発明によれば、多層に積
層されたルテニウムの酸化物と、チタンの酸化物、マン
ガンの酸化物、コバルトの酸化物のうちのいずれか一つ
、またはチタンの酸化物とコバルト酸化物とからなる抵
抗体を作製することにより、低抵抗領域におけるノイズ
特性に優れた抵抗体を実現できるものであり、その産葉
上の効果は多大なものである。[Table 3] [00211] From these results, it was found that a resistor having a sheet resistance value depending on the paste composition and film thickness could be obtained. Furthermore, all samples had good noise characteristics. The reason why the noise characteristics of the resistors manufactured according to Examples 1 and 2 are good as described above is that the film cracking 1a of the resistor 1 as shown in FIG. 2 does not occur. [0022] In this example, only a square plate type chip resistor is described as an example of the use of a resistor, but the paste produced in this example can be used to create hybrid ICs, resistance networks, RC networks, various variable resistors, etc. It can be used as a resistor of a thermal head, and a heating resistor of a thermal head, and these elements can have performance equivalent to that of the above-mentioned chip resistor. [0023] As described above, according to the present invention, a multilayered ruthenium oxide, and any one of a titanium oxide, a manganese oxide, and a cobalt oxide. Alternatively, by creating a resistor made of titanium oxide and cobalt oxide, it is possible to create a resistor with excellent noise characteristics in the low resistance region, and its effects on production are significant. be.
【図1】本発明の一実施例による抵抗体の製造方法を用
いた角板型チップ固定抵抗器の断面図である。FIG. 1 is a cross-sectional view of a square plate type fixed chip resistor using a method for manufacturing a resistor according to an embodiment of the present invention.
【図2】従来の技術による抵抗体の断面図である。FIG. 2 is a cross-sectional view of a resistor according to the prior art.
5 絶縁基板 6 アンダーグレーズガラス 7 銀−パラジウム電極 8 抵抗体 9 オーバーグレーズガラス 5 Insulating substrate 6 Underglaze glass 7 Silver-palladium electrode 8 Resistor 9 Overglaze glass
Claims (1)
チタンを含有する化合物マンガンを含有する化合物、コ
バルトを含有する化合物のうちのいずれか一つ、または
チタンを含有する化合物とコバルトを含有する化合物と
を有機溶媒に溶解した溶液を用い、この溶液を絶縁基板
上に塗布し焼成する操作を2度以上繰り返し行うことに
より、ルテニウムの酸化物と、チタンの酸化物,マンガ
ンの酸化物,コバルトの酸化物のうちのいずれか一つ、
またはチタンの酸化物とコバルトの酸化物とからなる抵
抗体を形成することを特徴とする抵抗体の製造方法。Claim 1: A compound containing ruthenium in its structure;
Using a solution in which one of a titanium-containing compound, a manganese-containing compound, and a cobalt-containing compound, or a titanium-containing compound and a cobalt-containing compound are dissolved in an organic solvent, this solution is dissolved. By repeating the operation of coating and firing on an insulating substrate twice or more, ruthenium oxide, and one of titanium oxide, manganese oxide, and cobalt oxide,
Alternatively, a method for manufacturing a resistor, comprising forming a resistor made of a titanium oxide and a cobalt oxide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2400447A JPH04209502A (en) | 1990-12-05 | 1990-12-05 | Manufacture of resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2400447A JPH04209502A (en) | 1990-12-05 | 1990-12-05 | Manufacture of resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04209502A true JPH04209502A (en) | 1992-07-30 |
Family
ID=18510354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2400447A Pending JPH04209502A (en) | 1990-12-05 | 1990-12-05 | Manufacture of resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04209502A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0923085A1 (en) * | 1997-06-16 | 1999-06-16 | Matsushita Electric Industrial Co., Ltd. | Resistance wiring board and method for manufacturing the same |
JP2006248815A (en) * | 2005-03-09 | 2006-09-21 | Sumitomo Metal Mining Co Ltd | Ru-Mn-O FINE POWDER, ITS MANUFACTURING METHOD AND THICK FILM RESISTOR COMPOSITION USING THE SAME |
-
1990
- 1990-12-05 JP JP2400447A patent/JPH04209502A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0923085A1 (en) * | 1997-06-16 | 1999-06-16 | Matsushita Electric Industrial Co., Ltd. | Resistance wiring board and method for manufacturing the same |
EP0923085A4 (en) * | 1997-06-16 | 2005-12-28 | Matsushita Electric Ind Co Ltd | Resistance wiring board and method for manufacturing the same |
JP2006248815A (en) * | 2005-03-09 | 2006-09-21 | Sumitomo Metal Mining Co Ltd | Ru-Mn-O FINE POWDER, ITS MANUFACTURING METHOD AND THICK FILM RESISTOR COMPOSITION USING THE SAME |
JP4692028B2 (en) * | 2005-03-09 | 2011-06-01 | 住友金属鉱山株式会社 | Ru-Mn-O fine powder, method for producing the same, and thick film resistor composition using the same |
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