JPH03233901A - Resistor and its manufacture - Google Patents

Abstract

PURPOSE:To make a characteristic good and to adjust a resistance value in a wide range by a method wherein a mixture is formed of oxides of ruthenium, titanium and silicon and a crystal phase is formed as a rutile single phase. CONSTITUTION:When the composition of 70mol% of ruthenium, 20mol% of titanium and 10mol% of silicon is set, its area resistance range can be adjusted from 152OMEGA to 500kOMEGA The resistance value of a resistor can be changed by changing a baking temperature. When a chemical composition, a film thickness and a treatment temperature are adjusted, an area resistance of about 5OMEGA to 10 MOMEGA can be obtained. The crystal structure of the resistor is of a tetragonal rutile type; its lattice constant is decided mainly by the ratio of ruthenium to titanium, and this causes an increase in the resistance value by a rise in the baking temperature. Thereby, the resistance value of the resistor whose noise characteristic is enhanced and whose power-resistance property is excellent can be adjusted in a wide range.

Description

DETAILED DESCRIPTION OF THE INVENTION 2. Field of Vane Industrial Application The present invention relates to a resistor structure used in various electronic devices and a method for manufacturing the same.

BACKGROUND OF THE INVENTION Ruthenium oxide buttons and their compounds are chemically stable, and resistors containing them as a main conductive component are widely used. Its structure is such that conductive particles are arranged in a mesh shape in an IJ hook made of insulating glass, etc.
The resistance value is determined by changing the ratio of the two. These can be manufactured at low cost by printing and firing, but because of their complex structure as mentioned above, they are inferior to so-called thin film resistors using metal films in terms of puff characteristics and noise characteristics. It's inferior.

Problems to be Solved by the Invention In order to improve the power characteristics and noise characteristics of the resistor,
It is necessary to increase the conductive component in the structure, but with conventional ruthenium oxide-based resistance materials, the use of insulating materials such as glass is essential because of the requirements for adjusting the resistance value and adhesion to the substrate.

3. It is an object of the present invention to eliminate the drawbacks of conventional resistors and provide a resistor that has the above-mentioned characteristics and whose resistance value can be adjusted over a wide range.

Means for Solving the Problems In order to solve the above problems, the present invention provides a resistor having a chemical composition of a mixture of oxides of ruthenium, titanium and silicon, and a single crystal phase of rutile. is formed on a substrate by thermal decomposition of a compound containing each metal or by vapor phase deposition of Fi.

Effect: With the above structure, almost all of the constituent particles of the resistor can be made of conductive material, and its noise characteristics are improved. -! In addition, since the constituent material is an oxide, a resistor with excellent power resistance can be manufactured.

Example The present invention will be explained below by giving specific examples.

Example 1 The kings of ruthenium 2-ethylhexanoate, tetra-n-butyl titanate, and tetrabenzyl orthosilicate were mixed and dissolved in methyl isobutyl ketone to prepare a coating liquid. 96%
This coating solution was spin-coded onto a substrate prepared by baking a borosilicate glass glaze with a softening point of 790°C at 1000°C on an alumina substrate, dried, and then thermally decomposed and fired in an electric furnace in the atmosphere. The thickness of the obtained resistor film changes depending on the metal compound concentration in the coating liquid and the rotation speed of the spin cord, and the sheet resistance value changes accordingly. By this method, for example, in a resistor film of 50 mo1% ruthenium, 30 mo1% titanium, and 20 mo1% silicon,
By setting the firing temperature to 700°C, it is possible to obtain a sheet resistance of approximately sM,2 (film thickness 0.03 μm) from approximately 100 g (film thickness 0.8 μm).
By introducing 1% titanium, 20mo1% titanium, and 10mo1% silicon, the area resistance range is increased from 16!2 to 5.
It can also be adjusted to 00 or 2. The resistance value of the resistor can also be changed by changing the firing temperature; when it is lowered, the resistance value decreases, and when it is raised, the resistance value increases. In this way, the resistor of the present invention can be produced by adjusting the chemical composition, film thickness, and processing temperature.
A sheet resistance of 10 Mg can be obtained from g.

The crystal structure of the resistor was investigated by X-ray diffraction.

It has become clear that when the firing temperature is 700° C. or lower, the entire composition is a tetragonal rutile type, and its lattice constant is determined mainly by the ratio of ruthenium to titanium. When the firing temperature reaches 800°C, splitting indicating phase separation becomes visible in the diffraction peak of X-ray diffraction, and this is considered to be the cause of the increase in resistance value as the firing temperature increases as described above.

The substrate on which these resistors were formed was cut into strips with a width of 0.8 mm using a diamond cutter, and electrodes were formed using commercially available silver paste to form resistors with a size of 0.8 mm x 0.8 mm. I created a resistor with

A protective glass layer was provided on the surface of the resistor by applying and baking a commercially available glass paste, and the current noise was measured using a noise meter manufactured by Quan-Tech. The applied voltage at this time is the rated power of the resistor.
The voltage was calculated as 25W. As a result, at least when the resistance value is 1 Mg or less, a value of -10 dB or less is obtained, and as the resistance value decreases, the current noise also decreases. (Characteristics below IB were obtained.) It became clear that the noise characteristics were mainly affected by the amount of silicon contained and the thickness of the resistor.

When the resistor described above was subjected to a power durability test in which a power of 1 W was applied for 5 seconds, the change in resistance value was ±0.05% for those with a resistance value of IMJ2 or less.

The results of this example show that the resistor of the present invention has very excellent noise characteristics and power characteristics.

Example 2 7Ba7 Ruthenium 2-ethylhexanoate, titanium oxide 2-ethylhexanoate, and ethyl silicate 40 (manufactured by Nippon Colcoat) were dissolved in terpineol, rosin was added to this solution, and heated at a temperature of 140°C or higher. A paste was prepared by refluxing to dissolve the rosin.

A glass paste with a softening point of 650°C was screen printed on a 96% alumina substrate with slits for division and baked at 900°C, and then a silver-palladium paste was applied as an electrode in a similar manner to a substrate as described above. After screen printing and drying the paste, the resistor was formed by thermal decomposition and firing at 700°C in the atmosphere, and a protective glass layer was further printed and fired to create a 2012 size square plate type chip resistor. was created.

When we performed the same measurements as in Example 1 on a completed chip resistor by dividing it and baking end-face electrodes, we found that a resistor with a resistance value and current noise corresponding to the composition of the paste could be obtained. . Further, these power characteristics were similar to those of Example 1.

Hybrid IC using the paste made in the wood example
We also fabricated a prototype resistor network; we were able to create a resistor network with performance equivalent to that of the chip resistor described above.

In addition to the metal compounds used in the above examples, any compound that is soluble in an appropriate solvent and compatible with other thickening components can be used for the purpose of the present invention.

In addition, a borosilicate glass plate (lyo59. Cor
Regarding the resistor formed on the
It was found that the same properties were obtained, and the same properties were obtained.

Effects of the Invention As is clear from the above embodiments, the resistor of the present invention is a mixture of oxides of ruthenium, titanium, and silicon, and by using a single-phase ruti-μ type material, It has better noise and power characteristics than other resistors, and its industrial effects are significant.

Claims (3)

[Claims] (1) A resistor that is a mixture of oxides of ruthenium, titanium, and silicon, and whose crystal phase is a single tetragonal rutile type. (2) A compound containing ruthenium, a compound containing titanium, and a compound containing silicon in the structure,
After coating the solution dissolved in a solvent on a heat-resistant substrate and drying it,
1. A method for manufacturing a resistor, comprising heating and firing in an oxygen-containing atmosphere to form a film made of a mixture of oxides of ruthenium, titanium, and silicon. (3) Production of the resistor according to claim 2, wherein the titanium-containing compound and the silicon-containing compound in the structure are a titanate ester or an organic acid salt of titanium, and a silicate ester or an organic acid salt of silicon. Method.