JPH04139802A - Resistor and its manufacture - Google Patents

Resistor and its manufacture

Info

Publication number
JPH04139802A
JPH04139802A JP2263998A JP26399890A JPH04139802A JP H04139802 A JPH04139802 A JP H04139802A JP 2263998 A JP2263998 A JP 2263998A JP 26399890 A JP26399890 A JP 26399890A JP H04139802 A JPH04139802 A JP H04139802A
Authority
JP
Japan
Prior art keywords
resistor
ruthenium
oxide
bismuth
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2263998A
Other languages
Japanese (ja)
Inventor
Chiharu Hayashi
千春 林
Kazuyuki Okano
和之 岡野
Tatsuo Ogawa
立夫 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2263998A priority Critical patent/JPH04139802A/en
Publication of JPH04139802A publication Critical patent/JPH04139802A/en
Pending legal-status Critical Current

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  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

PURPOSE:To obtain a resistor excellent in noise characteristics in a high- resistance region by dissolving four specific compounds in an organic solvent to be applied on an insulating substrate and by baking it. CONSTITUTION:Compounds which contain lead or bismuth, ruthenium, silicon, and alkali metal or alkali soil metal, respectively, are dissolved in an organic solvent, applied on an insulating substrate 11, and baked to form a resistor 14. That is, alkali metal or alkali earth metal of high anionicity is distributed in a form to hold local electric neutrality in a network structure formed by silicon oxide as anions, and lead and bismuth of low anionicity do not mix in this network structure, but react with ruthenium to produce a complex oxide which forms a cubic pyrochlore type. This allows manufacture of a resistor 14 excellent in noise characteristics in a high-resistance region.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は各種エレクトロニクス機器に使用される抵抗体
及びその製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a resistor used in various electronic devices and a method for manufacturing the resistor.

従来の技術 酸化ルテニウムおよびその化合物は化学的に安定であり
、それを導電性成分中の主要成分とする抵抗体は広く利
用されている。酸化ルテニウムを用いた部品の一例であ
る角板型チップ固定抵抗器は第3図に示すような構造で
ある。1は絶縁基板、2は電極、3はこの電極2間に形
成された抵抗体、4は抵抗体3を覆う保護ガラスである
。その抵抗体2の構造は第4図に示すように導電粒子6
すなわち酸化ルテニウムが、ガラス等の絶縁粒子5のマ
トリックス中に3次元の網目状に配置された形であり、
それら2者の比率を変えることによって抵抗値を決定し
ているものである。この抵抗体は印刷と焼成によって抵
コストで製造することが出来るが、前述のような複雑な
構造であるため、絶縁粒子5の体積分率を大きくしなけ
ればならない高抵抗領域すなわち10kohm/sq、
以上ではノイズ特性が0から+20dBで、金属皮膜等
の薄膜抵抗体に比して劣っており、改善する余地が残さ
れている。
BACKGROUND OF THE INVENTION Ruthenium oxide and its compounds are chemically stable, and resistors containing it as a main component in the conductive component are widely used. A square plate type fixed chip resistor, which is an example of a component using ruthenium oxide, has a structure as shown in FIG. 1 is an insulating substrate, 2 is an electrode, 3 is a resistor formed between the electrodes 2, and 4 is a protective glass that covers the resistor 3. The structure of the resistor 2 is as shown in FIG.
That is, ruthenium oxide is arranged in a three-dimensional network in a matrix of insulating particles 5 such as glass,
The resistance value is determined by changing the ratio of these two. This resistor can be manufactured at low cost by printing and firing, but since it has a complicated structure as described above, it is required to increase the volume fraction of the insulating particles 5 in the high resistance region, that is, 10 kohm/sq.
Above, the noise characteristics are 0 to +20 dB, which is inferior to thin film resistors such as metal films, and there is still room for improvement.

抵抗体のノイズ特性を改善するためには構造中の導電成
分を多くする必要がある従来の酸化ルテニウム系の抵抗
材料では抵抗値の調整と基板に対する密着性の点からガ
ラスなどの絶縁材料の使用は不可欠である。そこで最近
、金属化合物の熱分解によって絶縁基板上に金属酸化物
の混合体を形成すると、ノイズ特性の良好な抵抗体が得
られることを見いだした。
In order to improve the noise characteristics of a resistor, it is necessary to increase the conductive component in the structure.For conventional ruthenium oxide-based resistor materials, insulating materials such as glass are used to adjust the resistance value and improve adhesion to the substrate. is essential. Recently, it has been discovered that a resistor with good noise characteristics can be obtained by forming a mixture of metal oxides on an insulating substrate by thermal decomposition of a metal compound.

発明が解決しようとする課題 しかしながら導電性材料として、固有抵抗値の高い鉛と
ルテニウムの複合酸化物またはビスマスとルテニウムの
複合酸化物と、抵抗値を増大させるケイ素の酸化物との
混合体を用いるために、前記の各金属化合物を絶縁基板
上に塗布し、焼成すルト、鉛とルテニウム、ビスマスと
ルテニウムの反応物である複合酸化物は生成されずに、
固有抵抗値の低い酸化ルテニウムが形成されるという課
題を有していた。これは鉛およびビスマスの陽イオン性
が高いために酸化ケイ素が形成する不規則網目構造の網
目の中に陽イオンとして入るので、鉛とルテニウム、ビ
スマスとルテニウムが反応しないからである。
Problems to be Solved by the Invention However, as a conductive material, a mixture of a composite oxide of lead and ruthenium or a composite oxide of bismuth and ruthenium, which has a high specific resistance value, and an oxide of silicon, which increases the resistance value, is used. Therefore, when each of the metal compounds mentioned above is coated on an insulating substrate and fired, no composite oxide, which is a reaction product of lead and ruthenium, or bismuth and ruthenium, is produced.
The problem was that ruthenium oxide with a low specific resistance value was formed. This is because lead and bismuth are highly cationic and enter as cations into the irregular network structure formed by silicon oxide, so lead and ruthenium and bismuth and ruthenium do not react.

本発明は以上のような従来の欠点を除去し、高抵抗領域
での抵抗体のノイズ特性を飛躍的に向上させるための抵
抗体の製造方法を提供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a resistor that eliminates the above-mentioned conventional drawbacks and dramatically improves the noise characteristics of the resistor in a high resistance region.

課題を解決するだめの手段 この目的を達成するために本発明は、構造中に鉛もしく
はビスマスを含有する化合物と、ルテニウムを含有する
化合物と、ケイ素を含有する化合物と、アルカリ金属ま
たはアルカリ土類金属を含有する化合物とを有機溶媒に
溶解した溶液を絶縁基板上に塗布し、焼成して、鉛とル
テニウムの複合化合物またはビスマスとルテニウムの複
合酸化物と、ケイ素の酸化物と、アルカリ金属またはア
ルカリ土類金属の酸化物とからなる抵抗体を形成するこ
とを特徴とするものである。
Means for Solving the Problems To achieve this object, the present invention provides a compound containing lead or bismuth in its structure, a compound containing ruthenium, a compound containing silicon, and an alkali metal or alkaline earth compound. A solution of a metal-containing compound dissolved in an organic solvent is applied onto an insulating substrate and fired to form a lead-ruthenium composite compound or a bismuth-ruthenium composite oxide, a silicon oxide, an alkali metal or This is characterized by forming a resistor made of an oxide of an alkaline earth metal.

作用 本発明の構成によれば、陽イオン性の高いアルカリ金属
またはアルカリ土類金属は陽イオンとして酸化ケイ素が
形成している網目構造中に局所的な電気的中性を保つ形
で分布するので、これらのアルカリ金属またはアルカリ
土類金属より陽イオン性の低い鉛およびビスマスはこの
網目構造中に混入することなくルテニウムと反応して立
方晶のパイロクロア型をなす複合酸化物が生成される。
According to the structure of the present invention, highly cationic alkali metals or alkaline earth metals are distributed as cations in the network structure formed by silicon oxide in a form that maintains local electrical neutrality. Lead and bismuth, which are less cationic than these alkali metals or alkaline earth metals, react with ruthenium without being mixed into this network structure, producing a cubic pyrochlore-type complex oxide.

そのため抵抗体の構成粒子をほとんどすべて固有抵抗値
の高い鉛もしくはビスマスとルテニウムの複合酸化物を
導電性の材料とすることができ、高抵抗領域においても
そのノイズ特性に優れた抵抗体を製造することができる
Therefore, almost all of the constituent particles of the resistor can be made of lead or a complex oxide of bismuth and ruthenium, which have a high specific resistance value, as conductive materials, making it possible to manufacture resistors with excellent noise characteristics even in the high resistance range. be able to.

実施例 以下、本発明の一実施例の抵抗体の製造方法を説明する
EXAMPLE A method of manufacturing a resistor according to an example of the present invention will be described below.

(実施例I) 第1表に示すペーストNo、 1〜20の各ペーストに
ついて、金属化合物1〜4を表示した組成比で混合して
総110gを4−メチル2−ペンタノン100gに混合
溶解して粘度0.5Pa−sの塗布液とした。
(Example I) For each paste No. 1 to 20 shown in Table 1, metal compounds 1 to 4 were mixed in the indicated composition ratio, and a total of 110 g was mixed and dissolved in 100 g of 4-methyl 2-pentanone. The coating liquid had a viscosity of 0.5 Pa-s.

(以下余白) 第1表 (表示値:m01%) そして各試料について、それぞれバリウムホウケイ酸ガ
ラス(コーニング社製# 7059 )基板に、この塗
布液を2000回転の回転数でスピンコードし、乾燥し
た後、大気中において電気炉で熱分解し、焼成し抵抗体
とした。この時の焼成温度を700°Cとした。このよ
うにして得られた抵抗体の面積抵抗値をそれぞれ第2表
に示す。
(Margin below) Table 1 (Displayed value: m01%) For each sample, this coating solution was spin-coded onto a barium borosilicate glass (#7059 manufactured by Corning) substrate at a rotation speed of 2000 rpm, and dried. Thereafter, it was thermally decomposed in an electric furnace in the atmosphere and fired to form a resistor. The firing temperature at this time was 700°C. Table 2 shows the sheet resistance values of the resistors thus obtained.

(以下余白) 第2表 なお抵抗体の面積抵抗値は焼成温度を変化させることに
よって変えることができ、それを低下させると抵抗値は
減少し、上昇させると抵抗値は増大する。また得られた
抵抗体は塗布液中の金属化合物の粘度およびスピンコー
ドの回転数によってもその膜厚が変わり、それに応じて
面積抵抗値が変化する。
(Margin below) Table 2 The sheet resistance value of the resistor can be changed by changing the firing temperature; when it is lowered, the resistance value decreases, and when it is raised, the resistance value increases. Furthermore, the film thickness of the obtained resistor changes depending on the viscosity of the metal compound in the coating liquid and the rotation speed of the spin cord, and the sheet resistance value changes accordingly.

このように本発明の抵抗体は化学組成、膜厚、および処
理温度を調節することによって幅広い抵抗値を実現する
ことが出来るが、本実施例においては、すべての試料に
ついて一定溶液粘度の塗布液を一定回転数で基板上に塗
布し、かつ一定焼成温度で抵抗体を形成したが、適宜前
記条件を選べば目的の抵抗値を得ることができる。
As described above, the resistor of the present invention can achieve a wide range of resistance values by adjusting the chemical composition, film thickness, and processing temperature. Although the resistor was formed by coating the resistor on the substrate at a constant rotational speed and at a constant firing temperature, the desired resistance value can be obtained by appropriately selecting the above conditions.

また、抵抗体の結晶構造はX線回折によって調べた。焼
成温度が500°C以上の全組成において立方晶のパイ
ロクロア型であり、焼成温度を変えてもX線回折の回折
ピーク強度に変化が見られないことから、熱に対して安
定な物質であることが明らかとなった。
In addition, the crystal structure of the resistor was investigated by X-ray diffraction. It is a cubic pyrochlore type in all compositions when the firing temperature is 500°C or higher, and there is no change in the diffraction peak intensity of X-ray diffraction even if the firing temperature is changed, so it is a stable substance against heat. It became clear that

これらの試料No、 1〜20の抵抗体を形成した基板
を幅0.8mmの短冊上にダイアモンドカッターにて切
断し、市販の金ペーストを用いて厚さ1μm以下の電極
を形成して、0.8mmX 0.8mmの大きさの抵抗
体を有する抵抗器を作製した。さらに抵抗体表面に市販
のガラスペーストを塗布して焼き付けることによって保
護ガラス層を設け、また金電極にニッケルメッキ、半田
メツキをして、これらの抵抗器の電流ノイズをファンチ
ック (Quan−Tech)社製の電流ノイズ測定器
を使って測定した。この際の印加電圧は抵抗器の定格電
力を0.25Wとして算出した電圧とした。この結果を
第2表に示す。
These sample Nos. 1 to 20 of the substrates on which the resistors were formed were cut into strips with a width of 0.8 mm using a diamond cutter, and electrodes with a thickness of 1 μm or less were formed using commercially available gold paste. A resistor having a resistor size of .8 mm x 0.8 mm was manufactured. Furthermore, a protective glass layer is provided by coating and baking a commercially available glass paste on the surface of the resistor, and the gold electrode is nickel plated and soldered to reduce the current noise of these resistors. (Quan-Tech) The noise was measured using a current noise measuring device manufactured by the company. The applied voltage at this time was a voltage calculated assuming that the rated power of the resistor was 0.25W. The results are shown in Table 2.

第2表から明らかなように、少なくとも抵抗値が減少す
るにしたがって電流ノイズも減少し、第1表に示した組
成と対比させるとノイズ特性が主にケイ素の含有量によ
って影響を受けることが明らかとなった。
As is clear from Table 2, at least as the resistance value decreases, the current noise also decreases, and when compared with the composition shown in Table 1, it is clear that the noise characteristics are mainly affected by the silicon content. It became.

以上のように本実施例の結果から、本発明の抵抗体が高
抵抗領域においても非常に優れたノイズ特性を有するこ
とがわかった。
As described above, from the results of this example, it was found that the resistor of the present invention has very excellent noise characteristics even in a high resistance region.

(実施例2) 次に本発明の他の実施例を説明する。(Example 2) Next, another embodiment of the present invention will be described.

実施例1と同様に第1表に示す金属化合物を表示した組
成比で混合して総量5gをα−テルピネオール100g
に溶解し、この溶液に2量化ロジン100gを添加し、
100°C以上の温度で加熱還流して2量化ロジンを溶
解させてペーストを作成した。
As in Example 1, the metal compounds shown in Table 1 were mixed in the indicated composition ratio, and a total of 5 g was added to 100 g of α-terpineol.
and add 100 g of dimerized rosin to this solution,
The dimerized rosin was dissolved by heating under reflux at a temperature of 100°C or more to prepare a paste.

第1図に本発明によれ製造した角板型チップ固定抵抗器
、第2図にその抵抗体部分の拡大図を示す、図において
11は絶縁基板、12は下地ガラス、13は一対の電極
、14は抵抗体、15は保護ガラス、16は導電粒子で
ある。以下この角板型チップ固定抵抗器の製造方法につ
いて記す。分割のためのスリットが設けられた96%ア
ルミナ基板等の絶縁基板11上に、下地ガラス12とし
て軟化点650°Cのガラスペーストをスクリーン印刷
し、900°Cで焼き付けた後、電極13として銀−パ
ラジウムペーストを同様な方法で下地ガラス12の両端
に前述の各試料ペーストNα1〜20をスクリーン印刷
し、乾燥した後、大気中700°Cで熱分解、焼成して
抵抗体14を形成する。さらにこの抵抗体14の上面に
保護ガラス層15を印刷、焼成によって形成し最後に分
割して端面電極を焼き付けて本実施例の角板型チップ固
定抵抗器を作製した。
Fig. 1 shows a square plate type chip fixed resistor manufactured according to the present invention, and Fig. 2 shows an enlarged view of the resistor portion thereof. In the figure, 11 is an insulating substrate, 12 is a base glass, 13 is a pair of electrodes, 14 is a resistor, 15 is a protective glass, and 16 is a conductive particle. The method for manufacturing this square plate type fixed chip resistor will be described below. On an insulating substrate 11 such as a 96% alumina substrate provided with slits for division, a glass paste with a softening point of 650°C is screen printed as a base glass 12, and after baking at 900°C, silver is printed as an electrode 13. - Each of the sample pastes Nα1 to 20 described above is screen printed on both ends of the base glass 12 using a similar method, dried, and then thermally decomposed and fired at 700°C in the atmosphere to form the resistor 14. Furthermore, a protective glass layer 15 was formed on the upper surface of this resistor 14 by printing and baking, and finally it was divided and end face electrodes were baked to produce the square plate type fixed chip resistor of this example.

これらの各チップ抵抗器に対し実施例1と同様の測定を
行い、面積抵抗値および電流ノイズの結果を第3表に示
す。結果よりペーストの組成に応じた抵抗値と電流ノイ
ズを有する抵抗器が得られることがわかった。
The same measurements as in Example 1 were carried out for each of these chip resistors, and the results of the sheet resistance value and current noise are shown in Table 3. The results showed that a resistor with a resistance value and current noise depending on the paste composition could be obtained.

(以下余白) 第3表 なお、本実施例において抵抗体の利用例として角板型チ
ップ抵抗器のみ記載したが、本実施例で作製したペース
トを用いてハイブリッドICや抵抗器y Lワーク、R
Cネットワーク、各種可変抵抗器の抵抗体、およびサー
マルヘッドの発熱抵抗体に用いることができ、これらの
素子は前述のチ・7ブ固定抵抗器と同等の性能を有する
ものが得られる。
(Leaving space below) Table 3 Note that in this example, only a square plate type chip resistor is described as an example of the use of a resistor, but the paste produced in this example can be used to create hybrid ICs, resistor y L work, R work etc.
It can be used for a C network, a resistor of various variable resistors, and a heating resistor of a thermal head, and these elements can have the same performance as the above-mentioned chip/7-tub fixed resistor.

以上のように実施例1および2によって作製した抵抗体
のノイズ特性が良好であるのは、第2図に示すように抵
抗体14層がほとんど導電粒子16のみからなるためで
ある。
The reason why the noise characteristics of the resistors manufactured in Examples 1 and 2 are good as described above is that the resistor 14 layer is almost composed only of the conductive particles 16, as shown in FIG.

発明の効果 以上のように本発明によれば、鉛とルテニウムの複合酸
化物またはビスマスとルテニウムの複合酸化物と、ケイ
素の酸化物と、アルカリ金属またはアルカリ土類金属の
酸化物とからなり、その結晶相が立方晶のパイロクロア
型単相である抵抗体を作製することにより、従来の酸化
ルテニウム系厚膜抵抗体に比して高抵抗領域におけるノ
イズ特性に優れた抵抗体を実現できるものであり、その
産業上の効果は多大なものである。
Effects of the Invention As described above, according to the present invention, a composite oxide comprising a composite oxide of lead and ruthenium or a composite oxide of bismuth and ruthenium, an oxide of silicon, and an oxide of an alkali metal or an alkaline earth metal, By producing a resistor whose crystal phase is a cubic pyrochlore single phase, it is possible to create a resistor with superior noise characteristics in the high resistance region compared to conventional ruthenium oxide thick film resistors. The industrial effect is enormous.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の抵抗体を用いた角板型チッ
プ固定抵抗器の断面図、第2図はその抵抗体部分の拡大
断面図、第3回は従来のメタルグレーズ系厚膜チップ抵
抗器の断面図、第4図はその抵抗体部分の拡大断面図で
ある。 11・・・・・絶縁基板、12・・・・・・下地ガラス
、13・・・・・・電極、14・・・・・・抵抗体、1
5・・・・・・保護ガラス層、16・・・・・・導電粒
子。 代理人の氏名 弁理士 小鍜治 明 ばか2名城
Fig. 1 is a cross-sectional view of a square plate type fixed chip resistor using a resistor according to an embodiment of the present invention, Fig. 2 is an enlarged cross-sectional view of the resistor part, and Fig. 3 is a conventional metal glaze system thickness. FIG. 4 is a cross-sectional view of the membrane chip resistor, and FIG. 4 is an enlarged cross-sectional view of the resistor portion thereof. 11... Insulating substrate, 12... Base glass, 13... Electrode, 14... Resistor, 1
5... Protective glass layer, 16... Conductive particles. Name of agent: Patent attorney Akira Okaji Baka 2 Meijou

Claims (3)

【特許請求の範囲】[Claims] (1)構造中に鉛もしくはビスマスを含有する化合物と
、ルテニウムを含有する化合物と、ケイ素を含有する化
合物と、アルカリ金属またはアルカリ土類金属を含有す
る化合物とを有機溶媒に溶解した溶液を絶縁基板上に塗
布し、焼成して、鉛とルテニウムの複合酸化物またはビ
スマスとルテニウムの複合酸化物と、ケイ素の酸化物と
、アルカリ金属またはアルカリ土類金属の酸化物とから
なる抵抗体を形成することを特徴とする抵抗体の製造方
法。
(1) Insulating a solution in which a compound containing lead or bismuth, a compound containing ruthenium, a compound containing silicon, and a compound containing an alkali metal or alkaline earth metal are dissolved in an organic solvent. It is coated on a substrate and fired to form a resistor consisting of a composite oxide of lead and ruthenium or a composite oxide of bismuth and ruthenium, an oxide of silicon, and an oxide of an alkali metal or alkaline earth metal. A method for manufacturing a resistor, characterized by:
(2)請求項1記載の抵抗体の製造方法により得られる
鉛とルテニウムの複合酸化物またはビスマスとルテニウ
ムの複合酸化物と、ケイ素の酸化物と、アルカリ金属ま
たはアルカリ土類金属の酸化物とからなる抵抗体。
(2) A composite oxide of lead and ruthenium or a composite oxide of bismuth and ruthenium obtained by the method for manufacturing a resistor according to claim 1, an oxide of silicon, and an oxide of an alkali metal or alkaline earth metal. A resistor consisting of.
(3)請求項2記載の抵抗体の結晶相が立方晶のパイロ
クロア型単相である抵抗体。
(3) The resistor according to claim 2, wherein the crystal phase of the resistor is a cubic pyrochlore single phase.
JP2263998A 1990-10-01 1990-10-01 Resistor and its manufacture Pending JPH04139802A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2263998A JPH04139802A (en) 1990-10-01 1990-10-01 Resistor and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2263998A JPH04139802A (en) 1990-10-01 1990-10-01 Resistor and its manufacture

Publications (1)

Publication Number Publication Date
JPH04139802A true JPH04139802A (en) 1992-05-13

Family

ID=17397129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2263998A Pending JPH04139802A (en) 1990-10-01 1990-10-01 Resistor and its manufacture

Country Status (1)

Country Link
JP (1) JPH04139802A (en)

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