JPH04207128A - Apparatus for cultivating plant - Google Patents

Abstract

PURPOSE:To obtain the subject apparatus capable of adding far infrared light radiation required for photomorphogenesis of a plant to light radiation having a wavelength region necessary for photosynthesis of the plant as a main wavelength, optionally regulating respective light radiation intensities and performing cultivation of high added value according to the purposes and uses. CONSTITUTION:In a plant cultivation apparatus for cultivating plants such as vegetables by light radiation from artificial light sources, a cultivation chamber 2 and a wind channel 3 for circulating air are provided in the interior of a wind channel type growth cabinet 1. The circulation wind velocity of air is regulated with a fan 4 and the temperature, humidity and CO2 in the growth cabinet 1 are regulated by a temperature regulating means 5, a humidity regulating means 6 and a CO2 concentration regulating means 7. An apparatus (8b) for far infrared light radiation (having 700-800nm wavelength region as a main wavelength) participating in photomorphogenesis of the plants is simultaneously added to an apparatus (8a) for light radiation (PAR) having 400-700nm wavelength region as a main wavelength participating in photosynthesis of the plants to optionally regulate respective light radiation intensities. Thereby, the plants are cultivated.

Description

[Detailed Description of the Invention] Industrial Application Field The present invention relates to a device for cultivating plants such as vegetables by light radiation from an artificial light source, which surpasses the light radiation intensity of conventional technology. Strong Arashi Artificially and effectively controlling growth environment conditions such as moisture and nutrients to achieve stable cultivation and production of high-quality, highly effective vegetables and other plants Research and development of so-called plant factories is rapidly progressing.
Activation U Although it has been put into practical use in some places, as a method of supplying light radiation for plant factories (Dai) Completely natural use method Hybrid light method using both natural light and artificial light Fully artificial light method is used High quality, high efficiency wind In order to meet the purpose of a plant factory, which is to cultivate and produce vegetables and other plants in a stable manner, it is desirable to use a method of cultivation under more complete growth environment control, and as a method of supplying light radiation, it is desirable to use completely artificial light. Ideally, it would be best to adopt this method.Generally used artificial light sources include metal halide lamps, high-pressure sodium lamps,
Fluorescent lances, etc. are used singly or in combination. Emphasis is placed on material production efficiency such as biological monitoring, dry weight, and plant morphology such as stem and leaf size and shape, plant height, and leaf/stem weight ratio. The purpose of this invention is to break away from dependence on the natural environment and produce plants in an artificial environment with the same high quality and stability as industrial products. In addition to achieving high quality and stable production of cultivated and produced plants, the plant factories that have been cultivated have been able to artificially control the light radiation environment to improve plant characteristics such as stem size, leaf size and shape, plant height, leaf/stem weight ratio, etc. If morphogenesis could be controlled arbitrarily, for example, it would be possible to reduce the leaf area and produce leafy vegetables with thick leaves that are less likely to wilt, making it advantageous for long-distance transportation over long distances.Also, it would be advantageous to be close to artificial light sources. In this situation, phosphorization cultivation that suppresses plant height is effective for efficiently utilizing the light radiation from the light source and using the cultivation space in high density. The purpose of the present invention is to provide a device capable of cultivating high value-added plants that have added morphogenesis in addition to the conventional material production through photosynthesis of plants. In order to solve this problem, the present invention aims to solve the following problems:
y Acti-ve Radiation (photosynthetically effective light radiation), i.e., light radiation having a dominant wavelength in the wavelength range of 400 to 700 nm; Far-red light radiation involved in photomorphogenesis of plants, i.e., having a dominant wavelength in the wavelength range of 700 to 800 nm. This plant cultivation device is characterized by being able to add light radiation and arbitrarily adjust the intensity of each light radiation.

The effect of the above structure is that compared to the PAR light radiation source, which is effective from the viewpoint of photosynthesis to control material production in plants, the long-distance radiation having a wavelength range of 00 to 800 nm is compared to the growth in a light radiation environment using only PAR light radiation sources. Photomorphogenesis based on irradiation from a red light radiation source promotes the elongation of plant parts and leaf veins. In addition, by arbitrarily adjusting the light radiation intensity from the &PAR light radiation source and the far-red light radiation source and controlling the addition state of far-red light radiation, the elongation and phosphorization of plant stems and the size and size of leaves can be controlled. The shape, plant height, leaf/stem weight ratio, etc. can be artificially controlled, making it possible to cultivate and produce high value-added plants according to the purpose and use of the plant. An example will be explained based on the drawings.Part 1
The figure shows an embodiment of the plant cultivation apparatus of the present invention. A cultivation chamber 2 and a wind tunnel 3 for circulating air are provided in a wind tunnel type growth cabinet l. Air is circulated by a fan 4 and the wind speed is adjusted. Temperature adjustment means 5, humidity adjustment means 6, and COa concentration adjustment means 7 are provided.
Even if t is adjusted, P A R (
Photosynt-hetically Active
e Radiation, photosynthetically effective light radiation), i.e. 4
Multiple PAs with main wavelength in the wavelength range of 00 to 700 nm
Fluorescent lamp 8a for R irradiation and far red light emission, i.e. 700
A plurality of fluorescent lamps 8b for irradiating far-red light radiation having a main wavelength in the wavelength range of ~800 nm are arranged horizontally and in parallel, and the fluorescent lamps for PAR irradiation and the fluorescent lamps for irradiating far-red light radiation are individually arranged. It can be blinked and dimmed. Further, a cultivation bed 9 with water retention properties is arranged below these fluorescent lamps 8a and 8b.

The required amount of culture solution is supplied to the cultivation bed 9 using a drip method, water and nutrients are supplied to the plants grown in the cultivation bed 9, and then an example of an experiment in which plant cultivation was performed using the four devices described above will be explained. Plum cultivation plant A is sunflower (Heli-ant), which has been isolated and cultivated for seven years to ensure genetic uniformity.
hus Annus L, cV Ru5sian Ma
seeds) were germinated, and the seedlings were grown under a three-wavelength fluorescent lamp for PAR irradiation with the spectral distribution characteristics shown by the dotted line in Figure 2.
Uniform seedlings on the 8th day of sowing with leaves beginning to develop were used.In each of the four growth cabinets 1, there was a 3-wavelength range emitting type 55W for PAR irradiation with the spectral distribution characteristics shown by the dotted line in Figure 2. Only 4 fluorescent lamps are installed, same as above PAR
In addition to four 3-wavelength range emitting type 55W fluorescent lamps for irradiation, nine 20W fluorescent lamps for far-red light irradiation, as shown by the solid line in Figure 2, are installed. For lamp installation locations where 20W fluorescent lamps are not added! !
A 20W fluorescent lamp covered with black drawing paper was installed to ensure temperature uniformity in each growth cabinet.Table 1 shows the light emission environment conditions inside each growth cabinet. All lamps were lit continuously for 24 hours, and the temperature was controlled at 25't - relative humidity at 70%.
In addition, cultivation was carried out using the hydroponic method using a culture solution (Daikyu House No. 1, No. 2 standard concentration culture solution), and Table 2 shows the experimental results in which air was supplied to the rhizosphere using an air pump. a Significant increase in leaf area was observed in far-red light radiation treated plots C and D from the 6th day after the start of treatment. There was a significant increase in treatment area C and D. As the number of treatment days progressed, the difference with the case where far-red light radiation was not added expanded, and in treatment area C (Yo 8
On the 1st day, the increase was 2.6 times that of treatment area A where far-red light radiation was not added, and the increase was more than 3.6 times that of treatment area A. Figure 3 shows 1.
Start of red light radiation treatment to show the elongated state of the stem 8
Day = Hypocotyl melon of each treatment section 1st internodes 2nd internodes 1
The plant lengths are stacked and shown in a graph.The tip of the black fill indicates the stem length.The bar graph section indicates the plant height.1st internodal ball2nd internodal stem tBoth plant heights emit far-red light. The treatment area αD grows rapidly and the effect of the invention is due to the above-mentioned structure. 00-800nm compared to growth in
The photomorphogenetic effect based on irradiation from a far-red light radiation source with a wavelength range of ? By arbitrarily adjusting and controlling the addition state of far-red light radiation, it is possible to artificially control plant stem elongation, phosphorization, leaf spacing, shape, plant height, leaf/stem weight ratio, etc. This makes it possible to cultivate and produce high value-added plants according to the purpose and use of the plant.
The effect is like a dog.

[Brief explanation of the drawing]

Fig. 1 is a schematic side view of a cultivation device according to an embodiment of the present invention. Fig. 2 shows a PA used in a plant growth experiment using the same cultivation device.
Spectral distribution characteristics of 3-wavelength fluorescent lamps for R irradiation and fluorescent lamps for far-red light irradiation 8a... Light source for PAR irradiation 8b... Tip claw for far-red light irradiation 9... Cultivation bed, A... Name of Uetsu agent Patent attorney Akira Kokaji and 2 others ( vs
-ut-u-)7s w) *H￥X6.921
4 (i 5 Write procedural amendments 1, Name of invention Plant cultivation device 3 Relationship with the case of the person making the amendments) Patent application Office 1006 Oaza Kadoma, Kadoma City, Inuhanfu Name (582) Representative of Matsushita Electric Industrial Co., Ltd. person
Akio Tanii 4 Agent 571 Address 1006 Bold Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (2)

[Claims] (1) Optical radiation (PAR) with a dominant wavelength in the 400-700 nm wavelength range involved in photosynthesis in plants is combined with far-red light radiation (with a dominant wavelength in the 700-800 nm wavelength range) involved in photomorphogenesis in plants. 1. A plant cultivation device characterized in that a plant cultivation device is equipped with a light source (a) and the intensity of each light beam is arbitrarily adjusted. (2) arranging a PAR light radiation source and a far-red light radiation source;
The ratio of the light radiation intensity of both is the photon flux density ratio, 660±
5nm/730±5nm value: 15.0 to 0.1, 66
0-700nm/700-800nm value 7.0-0
．． 5. Cultivation of a plant characterized in that a PAR light radiation source and a far-red light radiation source can be individually blinked and dimmed between 22.0 and 1.0 at a value of 400 to 700 nm/700 to 800 nm. Device.