JPH04204035A - Sample pretreatment device - Google Patents

Sample pretreatment device

Info

Publication number
JPH04204035A
JPH04204035A JP2329407A JP32940790A JPH04204035A JP H04204035 A JPH04204035 A JP H04204035A JP 2329407 A JP2329407 A JP 2329407A JP 32940790 A JP32940790 A JP 32940790A JP H04204035 A JPH04204035 A JP H04204035A
Authority
JP
Japan
Prior art keywords
decomposition
sample
wafer
container
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2329407A
Other languages
Japanese (ja)
Inventor
Hiroko Takehara
竹原 裕子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2329407A priority Critical patent/JPH04204035A/en
Publication of JPH04204035A publication Critical patent/JPH04204035A/en
Pending legal-status Critical Current

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  • Sampling And Sample Adjustment (AREA)

Abstract

PURPOSE:To enable a sample to be decomposed and condensed without being affected by contamination from environment by using a structure which allows decomposition of the sample and condensation of the decomposed sample to be operated continuously using a same container. CONSTITUTION:A specified amount of decomposition liquid 3 is fed to a container 2, a sample wafer 4 is placed on it, a closing lid is placed from an upper part, and then a screw is clamped. When a decomposition device is placed on a heater 1 and then is heated, a decomposition liquid is evaporated, a thin film on a surface of a wafer is dissolved, and then is cooled and dropped. It is repeated while heating for a certain time by a heater and a thin film including a contamination substance on the surface of the wafer is dissolved entirely. When the sample after decomposition operation is condensed by the column condensation method, the container 2 with the decomposition liquid 3 is removed and is connected to a container for condensing column 7. By pressing a pure high-pressure gas from a gas introduction port 8, the decomposition liquid 3 is introduced to a condensation column 10 through a discharge port 9 and a target constituent is condensed, thus enabling an extremely small amount of wafer contaminated object to be analyzed with a high sensitivity and high accuracy.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、ウェハ汚染物の分析における試料の分解及び
濃縮のための試料前処理装置に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a sample pretreatment device for sample decomposition and concentration in the analysis of wafer contaminants.

[従来の技術] ウェハ表面汚染物の分析に用いられる試料分解方法とし
て従来は、特開昭61−38547のように密閉容器内
の純水を入れた容器内にウェハを浸漬し、同容器内で発
生させた酸蒸気を純水に溶解させて試料の分解を行うと
いう方法が用いられていた。しかし、この方法によれば
試料分解後は開放状態で分解試料液を取り扱わねばなら
ないために、濃縮等の前処理操作中に環境からのコンタ
ミネーションを受は易いという欠点か有った。
[Prior Art] Conventionally, as a sample decomposition method used to analyze wafer surface contaminants, a wafer is immersed in a sealed container containing pure water, as in Japanese Patent Application Laid-Open No. 61-38547, and The method used was to dissolve the acid vapor generated in pure water to decompose the sample. However, according to this method, since the decomposed sample liquid must be handled in an open state after the sample has been decomposed, it is susceptible to contamination from the environment during pretreatment operations such as concentration.

[発明か解決しようとする課題] 上記従来技術はウェハ表面汚染物の分解後、分析装置を
用いて定量を行うまでに施される濃縮等の前処理操作中
の環境からのコンタミネーションに関する配慮かなされ
ておらず、半導体デバイスの製造において問題となる極
微量汚染物質の分析を正確に行う上・で問題か有った。
[Problem to be solved by the invention] The above-mentioned conventional technology does not take into account contamination from the environment during pre-treatment operations such as concentration, which are performed after decomposition of wafer surface contaminants and before quantitative determination using an analyzer. This caused problems in accurately analyzing trace amounts of contaminants, which are a problem in the manufacture of semiconductor devices.

本発明は、極微量のウェハ汚染物の分析を高感度、高精
度に行うために環境からのコンタミネーションを受ける
ことなく試料の分解及び濃縮を行うことの出来る前処理
装置を提供することを目的とする。
An object of the present invention is to provide a preprocessing device that can decompose and concentrate a sample without receiving contamination from the environment in order to analyze extremely small amounts of wafer contaminants with high sensitivity and precision. shall be.

[課題を解決するための手段] 上記目的を達成するために、試料の分解装置部分と濃縮
装置部分の構造を統一し、試料の分解液を分解容器ごと
濃縮装置に合体できる構造としたものである。
[Means for solving the problem] In order to achieve the above objective, the structures of the sample decomposition device and the concentration device are unified, and the structure is such that the sample decomposition liquid can be combined with the decomposition container into the concentration device. be.

〔作用] 試料の分解に用いた容器は分解液の濃縮を行う濃縮装置
の一部として合体でき、試料の分解から分解液の濃縮ま
でを連続的に操作できるので、試料の前処理を環境から
のコンタミネーションを受けることなく実行することが
できる。
[Function] The container used for sample decomposition can be integrated as part of a concentrator that concentrates the decomposition solution, and the process from decomposition of the sample to concentration of the decomposition solution can be performed continuously, so sample pretreatment can be carried out from the environment. can be carried out without contamination.

〔実施例] 以下本発明の一実施例を第1図及び第2図により説明す
る。
[Example] An example of the present invention will be described below with reference to FIGS. 1 and 2.

第1図は試料分解装置部分の一実施例で、(a)はウェ
ハ全面を溶解するための全面分解装置、(b)はウェハ
の局所を溶解するための局所分解装置である。
FIG. 1 shows an embodiment of the sample decomposition device, in which (a) is a full-surface decomposition device for dissolving the entire surface of a wafer, and (b) is a local decomposition device for dissolving a local part of the wafer.

第2図は試料液濃縮装置部分の一実施例で、(c)はカ
ラム濃縮装置、(b)は反応容器、(c)は沈殿ろ過装
置である。
FIG. 2 shows an embodiment of the sample liquid concentrator, in which (c) is a column concentrator, (b) is a reaction vessel, and (c) is a precipitation filtration device.

本実施例の試料の分解操作は、ウェハ全面の汚染物を分
析する場合は第1図(a)の全面分解装置を用いて行わ
れ、ウェハの局所汚染物を分析する場合は第1図(b)
の局所分解装置を用いて行われる。(a)の全面分解装
置においては、試料容器2に分解液3を所定量入れ、試
料ウェハ4をのせて密閉ふた5を上からのせてねじをし
める。
The sample decomposition operation in this example is performed using the full-surface decomposition apparatus shown in FIG. 1(a) when analyzing contaminants on the entire surface of the wafer, and by using the full-surface decomposition apparatus shown in FIG. 1(a) when analyzing local contaminants on the wafer. b)
This is done using a local decomposition device. In the full-scale decomposition apparatus shown in (a), a predetermined amount of decomposition liquid 3 is poured into a sample container 2, a sample wafer 4 is placed thereon, a sealing lid 5 is placed on top, and the screw is tightened.

分解装置をヒーターlにのせて加熱すると分解液が蒸発
し、ウェハ表面の薄膜を溶解した後冷却されて落下する
。ヒーターで一定時間加熱する間にこれをくり返し、ウ
ェハ表面の汚染物質を含む薄膜が全面溶解する。必要に
応じて密閉ふたに冷却板6を付備し、ウェハを裏面から
冷却して分解液のウェハ表面での凝縮を促進することが
出来る。
When the decomposition device is placed on a heater 1 and heated, the decomposition liquid evaporates, dissolves the thin film on the wafer surface, and then cools and falls. This process is repeated while the wafer is heated for a certain period of time, and the thin film containing contaminants on the wafer surface is completely dissolved. If necessary, a cooling plate 6 can be attached to the airtight lid to cool the wafer from the back side and promote condensation of the decomposition liquid on the wafer surface.

(b)の局所分解装置においては、試料容器2にはとり
はずし可能な小型セル2′がねじ込まれており、各小型
セル2′に分解液3を所定量入れ、(a)と同様ウェハ
4をのせて密閉ふた5をしめした後一定時間ヒーターl
で加熱する。この場合はウェハ表面の薄膜のうち、小型
セル2′の接する部分のみが各々の分解液に溶解される
In the local decomposition device shown in (b), removable small cells 2' are screwed into the sample container 2, and a predetermined amount of decomposition liquid 3 is poured into each small cell 2', and the wafer 4 is placed in the same way as in (a). After placing the lid on and closing the airtight lid 5, turn on the heater l for a certain period of time.
Heat it up. In this case, only the portion of the thin film on the wafer surface that is in contact with the small cells 2' is dissolved in each decomposition solution.

次に第2図を用いて本実施例の濃縮操作について説明す
る。分解操作後の試料液をカラム濃縮法で濃縮する場合
は(c)のカラム濃縮装置を使用する。即ち、分解操作
終了後の分解′e3の入った分解容器2又は小型セル2
°をはずし、カラム濃縮用容器7に接続する。カス導入
口8より清浄な高圧カスを圧入することにより分解液3
は吐出口9を経て濃縮カラム10に導かれ、分解液中の
目的成分の濃縮が行われる。また分解後の試料液を溶媒
抽出や沈澱ろ過法で濃縮する場合はまず(d)の反応容
器を用いて所定の反応を進行させる。即ち、(c)と同
様分解液3の入った試料容器2又は小型セル2′を反応
容器12に接続し、抽出溶媒や沈澱反応のための添加液
11を添加後キャップ13を閉じ、振どう等を行って反
応を進行させる。反応終了後、例えば沈澱ろ過法による
濃縮の場合は(e)に示した沈澱ろ過装置を用いてろ過
を行う。即ち、キャップ13をはずし、その部分にフィ
ルターろ過装置14を接続する。フィルターろ過装置1
4にはろ過板16の上にフィルター15がフィルター締
め付は治具で固定されており、フィルターろ過装置の先
端を吸引びんに固定後、分解容器2と反応容器12の接
続をゆるめて吸引びんから吸引することにより、試料液
中の沈澱がろ紙上に捕集される。
Next, the concentration operation of this example will be explained using FIG. 2. When concentrating the sample solution after the decomposition operation using the column concentration method, use the column concentration device (c). That is, the decomposition container 2 or small cell 2 containing the decomposition 'e3 after the completion of the decomposition operation
° and connect it to column concentration container 7. By pressurizing clean high-pressure waste from the waste introduction port 8, the decomposed liquid 3
is led to the concentration column 10 through the discharge port 9, and the target component in the decomposition liquid is concentrated. When the sample solution after decomposition is concentrated by solvent extraction or precipitation filtration, a predetermined reaction is first carried out using the reaction vessel (d). That is, as in (c), the sample container 2 or small cell 2' containing the decomposition solution 3 is connected to the reaction container 12, and after adding the extraction solvent and the additive solution 11 for the precipitation reaction, the cap 13 is closed and shaken. etc. to allow the reaction to proceed. After the reaction is completed, for example, in the case of concentration by sedimentation filtration, filtration is performed using the sedimentation filtration apparatus shown in (e). That is, the cap 13 is removed and the filter filtration device 14 is connected to that part. Filter filtration device 1
4, the filter 15 is fixed on the filter plate 16 with a jig, and after fixing the tip of the filter filtration device to the suction bottle, the connection between the decomposition vessel 2 and the reaction vessel 12 is loosened and the suction bottle is attached. By suctioning from the sample liquid, the precipitate in the sample liquid is collected on the filter paper.

本発明によれば、はとんど外気に接することなく試料の
分解及び分解液の濃縮を行うことができるので、環境か
らのコンタミネーションを著しく低減することができる
According to the present invention, it is possible to decompose a sample and concentrate the decomposition solution without exposing it to the outside air, so that contamination from the environment can be significantly reduced.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、はとんど環境からのコンタミネーショ
ンを受けることなく試料の分解及び分解液の濃縮操作を
行うことかできるので、極微量のウェハ汚染物の分析を
高感度、高精度に行う上で効果的である。
According to the present invention, it is possible to decompose a sample and concentrate the decomposition solution without contamination from the environment, making it possible to analyze extremely small amounts of wafer contaminants with high sensitivity and precision. effective in doing so.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)は本発明の一実施例のウェハ全面を溶解す
る、ための全面分解装置の断面図、第1図(b)はウェ
ハの局所を溶解するための局所分解装置の断面図。 第2図(c)は本発明の一実施例のカラム濃縮用装置を
示す図、第2図(d)は反応装置を示す図、第2図(e
)は沈澱ろ過装置を示す図である。 ■・・・ヒーター、2・・・試料容器、2′・・・局所
分解セル、3・・・分解液、4・・・ウェハ、5・・・
密閉ふた、6・・・冷却板、7・・・カラム濃縮用容器
、8・・・ガス導入口、9・・・吐出口、10・・・濃
縮カラム、11・・・添加液、12・・・反応容器、1
3・・・キャップ、14・・・フィルターろ過装置、1
5・・・フィルター、16・・・ろ過板、17・・・フ
ィルター締め付は治具。 躬 1 口 (し) (C)     第 2 <e>
FIG. 1(a) is a cross-sectional view of a full-surface disassembly apparatus for melting the entire surface of a wafer according to an embodiment of the present invention, and FIG. 1(b) is a cross-sectional view of a local disassembly apparatus for melting a local part of a wafer. . FIG. 2(c) is a diagram showing a column concentration device according to an embodiment of the present invention, FIG. 2(d) is a diagram showing a reaction device, and FIG.
) is a diagram showing a sedimentation filtration device. ■... Heater, 2... Sample container, 2'... Local decomposition cell, 3... Decomposition liquid, 4... Wafer, 5...
Airtight lid, 6...Cooling plate, 7...Column concentration container, 8...Gas inlet, 9...Discharge port, 10...Concentration column, 11...Additive liquid, 12... ...Reaction container, 1
3... Cap, 14... Filter filtration device, 1
5... Filter, 16... Filter plate, 17... Filter tightening jig.謬 1 口(し) (C) 2nd <e>

Claims (1)

【特許請求の範囲】[Claims] 1、試料前処理装置であって、試料の分解と、分解試料
液の濃縮を同一容器を用いて連続して操作することが出
来る構造を有することを特徴とする試料前処理装置。
1. A sample pretreatment device, characterized in that it has a structure that allows the decomposition of a sample and the concentration of a decomposed sample solution to be performed continuously using the same container.
JP2329407A 1990-11-30 1990-11-30 Sample pretreatment device Pending JPH04204035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2329407A JPH04204035A (en) 1990-11-30 1990-11-30 Sample pretreatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2329407A JPH04204035A (en) 1990-11-30 1990-11-30 Sample pretreatment device

Publications (1)

Publication Number Publication Date
JPH04204035A true JPH04204035A (en) 1992-07-24

Family

ID=18221077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2329407A Pending JPH04204035A (en) 1990-11-30 1990-11-30 Sample pretreatment device

Country Status (1)

Country Link
JP (1) JPH04204035A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000193570A (en) * 1998-09-24 2000-07-14 Toshiba Ceramics Co Ltd Sample treating device for highly sensitive analysis of impurities in siliceous sample to be analyzed, and analyzing method using the same
WO2015182670A1 (en) * 2014-05-30 2015-12-03 株式会社住化分析センター Method of recovering sample for analysis, and use thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000193570A (en) * 1998-09-24 2000-07-14 Toshiba Ceramics Co Ltd Sample treating device for highly sensitive analysis of impurities in siliceous sample to be analyzed, and analyzing method using the same
WO2015182670A1 (en) * 2014-05-30 2015-12-03 株式会社住化分析センター Method of recovering sample for analysis, and use thereof
JPWO2015182670A1 (en) * 2014-05-30 2017-04-20 株式会社住化分析センター Method of collecting sample for analysis and use thereof

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