JPH04198096A - Method for growing znse crystal - Google Patents
Method for growing znse crystalInfo
- Publication number
- JPH04198096A JPH04198096A JP33126890A JP33126890A JPH04198096A JP H04198096 A JPH04198096 A JP H04198096A JP 33126890 A JP33126890 A JP 33126890A JP 33126890 A JP33126890 A JP 33126890A JP H04198096 A JPH04198096 A JP H04198096A
- Authority
- JP
- Japan
- Prior art keywords
- znse
- crystal
- solvent
- growth
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims description 8
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000011259 mixed solution Substances 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 claims description 31
- 238000002109 crystal growth method Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000005484 gravity Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- ORFSSYGWXNGVFB-UHFFFAOYSA-N sodium 4-amino-6-[[4-[4-[(8-amino-1-hydroxy-5,7-disulfonaphthalen-2-yl)diazenyl]-3-methoxyphenyl]-2-methoxyphenyl]diazenyl]-5-hydroxynaphthalene-1,3-disulfonic acid Chemical compound COC1=C(C=CC(=C1)C2=CC(=C(C=C2)N=NC3=C(C4=C(C=C3)C(=CC(=C4N)S(=O)(=O)O)S(=O)(=O)O)O)OC)N=NC5=C(C6=C(C=C5)C(=CC(=C6N)S(=O)(=O)O)S(=O)(=O)O)O.[Na+] ORFSSYGWXNGVFB-UHFFFAOYSA-N 0.000 description 3
- 238000005136 cathodoluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体結晶の成長方法に関し、特に高品質な
ＺｎＳｅ単結晶を安定して効率的に製造するのに好適な
結晶成長方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for growing semiconductor crystals, and particularly to a crystal growth method suitable for stably and efficiently producing high-quality ZnSe single crystals.
第６図にＺｎＳｅ半導体結晶の液相成長装置を示す。適
当な径を有する石英製の結晶成長用容器１０の底部に、
カーボン等の熱伝導性のよい材料で作成したヒートシン
ク１１を収納し固定する。FIG. 6 shows a liquid phase growth apparatus for ZnSe semiconductor crystal. At the bottom of a crystal growth container 10 made of quartz having an appropriate diameter,
A heat sink 11 made of a material with good thermal conductivity such as carbon is housed and fixed.
成長容器１０の上部にはソース結晶となるＺｎＳｅの多
結晶１２を配置する。さらに、ＺｎＳｅ多結晶１２とヒ
ートシンク１１の間をＳｅ溶媒１３で満たしている。A ZnSe polycrystal 12 serving as a source crystal is placed in the upper part of the growth chamber 10. Furthermore, the space between the ZnSe polycrystal 12 and the heat sink 11 is filled with Se solvent 13.
このような構成からなる結晶成長装置の容器１０内を所
定圧力に真空排気して封止する。従来の技術においては
、第６図の結晶成長装置を同図布に示すような温度勾配
中に配置すると、高温部（Ｔｓ）のソース結晶１２は飽
和溶解度まで溶解して、低温部（’Ｔｇ）に向って拡散
する。溶媒下部の低温部は温度かソース結晶１２付近よ
り低いため、溶媒１３においてＺｎＳｅは過飽和溶解度
になり、ヒートシンク１１上にバルク状にＺｎＳｅか結
晶成長する。The inside of the container 10 of the crystal growth apparatus having such a structure is evacuated to a predetermined pressure and sealed. In the conventional technology, when the crystal growth apparatus shown in FIG. 6 is placed in a temperature gradient as shown in the diagram, the source crystal 12 in the high temperature part (Ts) is melted to the saturated solubility, and the source crystal 12 in the low temperature part ('Tg ). Since the temperature of the low-temperature part below the solvent is lower than that near the source crystal 12, ZnSe has supersaturated solubility in the solvent 13, and ZnSe crystals grow in bulk on the heat sink 11.
このような液相成長装置において、溶媒としては、Ｚｎ
Ｓｅの構成元素であるＺｎあるいはＳｅか考えられるか
、第２図のＺｎＳｅの各種溶媒に対する溶解度曲線で示
されるように、溶媒としてＺｎを用いると、ＺｎＳｅの
溶解度が非常に低（、バルク状の結晶を得ることは困難
である。また、第６図のようにＳｅを溶媒とした場合に
は、第３図の各種溶媒の蒸気圧の温度依存性に示される
ように蒸気圧が非常に高く、溶解度を上げるために温度
を上げると蒸気圧か急増し石英容器１０が爆発する危険
性がある。また、そのための対策として容器１０の外側
から圧力を与えるような装置を作成すると全体として大
掛かりで複雑な結晶成長装置となり、生産装置として好
ましくない。さらに、第４図のＺｎＳｅとＳｅとＴｅの
密度比較に示すように、Ｓｅ （１００：Ｏ）とＺｎＳ
ｅ （点線）とを比重（密度）において比較すると、Ｚ
ｎＳｅ＞Ｓｅであるため、成長工程途中で、ソース結晶
の一部が落下したり溶媒中での拡散中で核発生した結晶
か結晶成長面上に落下したりするため、均質なバルク状
単結晶の成長が阻害されるといった問題点かあった。In such a liquid phase growth apparatus, Zn is used as a solvent.
Is it possible that Zn or Se is a constituent element of Se?As shown in the solubility curves of ZnSe in various solvents in Figure 2, when Zn is used as a solvent, the solubility of ZnSe is very low (in bulk form). It is difficult to obtain crystals.Also, when Se is used as a solvent as shown in Figure 6, the vapor pressure is extremely high as shown in the temperature dependence of the vapor pressure of various solvents in Figure 3. If the temperature is raised to increase the solubility, the vapor pressure will increase rapidly and there is a risk that the quartz container 10 will explode.Also, if a device is created to apply pressure from the outside of the container 10 as a countermeasure, it will be a large-scale project as a whole. This results in a complicated crystal growth device, which is not desirable as a production device.Furthermore, as shown in the comparison of the densities of ZnSe, Se, and Te in Figure 4, Se (100:O) and ZnS
When comparing the specific gravity (density) with e (dotted line), Z
Since nSe>Se, part of the source crystal may fall during the growth process, or a crystal nucleated during diffusion in the solvent may fall onto the crystal growth surface, resulting in a homogeneous bulk single crystal. There was a problem that the growth of the plant was inhibited.
本発明の目的は、上記問題点を解決し、高品質なＺｎＳ
ｅ単結晶を安定に効率的に製造する結晶成長方法を提供
することにある。The purpose of the present invention is to solve the above problems and produce high quality ZnS.
An object of the present invention is to provide a crystal growth method for stably and efficiently producing single crystals.
（課題を解決するための手段〕
本発明においては、ＺｎＳｅを溶解拡散させる溶媒とし
てＳｅとＴｅの混合溶液を用い、しかも混合液のＳｅの
比率を実質的に３０〜６０ｍｏｌ％とした。(Means for Solving the Problems) In the present invention, a mixed solution of Se and Te is used as a solvent for dissolving and diffusing ZnSe, and the ratio of Se in the mixed solution is substantially 30 to 60 mol%.
第２図のＺｎＳｅの各種溶媒に対する溶解度曲線で示さ
れるように、溶媒としてＴｅはＺｎＳｅの溶解度が非常
に高いので、Ｓｅとの混合溶液にした場合、Ｓｅ溶媒と
較へＺｎＳｅ結晶の結晶成長か速くなる。As shown in the solubility curves of ZnSe in various solvents in Figure 2, ZnSe has a very high solubility in Te as a solvent, so when a mixed solution with Se is used, the crystal growth of ZnSe crystals is slower than in Se solvent. It gets faster.
また、第３図の各種溶媒の蒸気圧特性に示されるように
、Ｔｅの蒸気圧は低いのでＳｅとの混合溶液とすること
によりＳｅ溶媒と較へ蒸気圧を低くてきる。Further, as shown in the vapor pressure characteristics of various solvents in FIG. 3, since the vapor pressure of Te is low, by forming a mixed solution with Se, the vapor pressure can be lowered compared to the Se solvent.
さらに、第４図のＺｎＳｅとＳｅとＴｅの密度比較に示
すようにＳｅの混合比かある比率（実線と点線の交点、
５ｅ６０ ：Ｔｅ４０）以下（交点の右側）になると、
５ｅ−Ｔｅ混合溶液（実線）の比重（密度）がＺｎＳｅ
のそれ（点線）を上回り、従って、ＺｎＳｅ結晶成長工
程中にソース結晶や結晶成長核が成長面に落下するよう
なことはなくなる。Furthermore, as shown in the comparison of the densities of ZnSe, Se, and Te in Figure 4, the mixing ratio of Se is a certain ratio (the intersection of the solid line and the dotted line,
5e60:Te40) or less (to the right of the intersection),
The specific gravity (density) of the 5e-Te mixed solution (solid line) is ZnSe
Therefore, the source crystal and crystal growth nuclei will not fall onto the growth surface during the ZnSe crystal growth process.
そして、溶液のＳｅの比率を実質的に３０〜６０ｍｏ
！％に選択することにより、後で詳細に説明するように
純青色スペクトル発光を行うＺｎＳｅ半導体素子が得ら
れる。Then, the ratio of Se in the solution is set to substantially 30 to 60 mo
! %, it is possible to obtain a ZnSe semiconductor device that emits light in the pure blue spectrum, as will be explained in detail later.
以下、第１図を参照して、本発明の実施例の方法を説明
する。Hereinafter, a method according to an embodiment of the present invention will be explained with reference to FIG.
第１図において、適当な径を有する石英製の結晶成長用
容器１０の底部に、カーボン等の熱伝導性のよい材料で
作成したヒートシンク１１を収納し、成長容器１０の所
定位置に刻みをいれてへこますことによりヒートシンク
１１を固定する。ヒートシンク１１の結晶を析出させる
面は平坦かつ鏡面に仕上げである。ヒートシンク１１は
、たとえば直径８〜２０ｍｍで、長さ５〜２００ｍｍの
円柱状の高純度カーボンで形成する。石英の成長容器１
０の上部は図示のように下部よりも径が大きく作られて
おり、これは、小口径の石英管と大口径の石英管とを接
続することによって作成できる。石英の成長容器１０の
上部にはソース結晶となるＺｎＳｅのインゴット状多結
晶１２を配置する。ＺｎＳｅ多結晶１２の径は成長容器
１０の小径より大きく、大径よりも小さく作られ、成長
容器１０の上部と下部の段差を利用して固定する。In FIG. 1, a heat sink 11 made of a material with good thermal conductivity such as carbon is housed in the bottom of a crystal growth container 10 made of quartz having an appropriate diameter, and a notch is made at a predetermined position in the growth container 10. The heat sink 11 is fixed by bending it. The surface of the heat sink 11 on which the crystals are deposited is flat and has a mirror finish. The heat sink 11 is made of cylindrical high-purity carbon, for example, with a diameter of 8 to 20 mm and a length of 5 to 200 mm. Quartz growth container 1
As shown in the figure, the upper part of the 0 is made to have a larger diameter than the lower part, and this can be made by connecting a small diameter quartz tube and a large diameter quartz tube. An ingot-shaped polycrystalline ZnSe 12 serving as a source crystal is placed in the upper part of the quartz growth container 10. The diameter of the ZnSe polycrystal 12 is made larger than the small diameter of the growth container 10 and smaller than the large diameter, and is fixed using the step between the upper and lower parts of the growth container 10.
さらに、ＺｎＳｅ多結晶１２とヒートシンク１１の間か
５ｅ−Ｔｅ混合溶媒１４て満たされている。Furthermore, a 5e-Te mixed solvent 14 is filled between the ZnSe polycrystal 12 and the heat sink 11.
このような構成からなる結晶成長装置の容器１０内を、
２Ｘ１０−６Ｔｏｒｒよりも高い真空度に真空排気して
封止する。以上の結晶成長装置を第１画布に示すような
ソース結晶部温度Ｔｓと結晶成長安定性Ｔｇを有する温
度勾配の炉中に配置すると、高温部分にあるソース結晶
１２は飽和溶解度になるまで溶媒１４中に溶解し、温度
勾配中を拡散輸送され、ヒートシンク１１の低温部（温
度Ｔｇ）は過飽和溶液となる。従って、ヒートシンク１
１の鏡面上にＺｎＳｅの単結晶が析出成長する。Inside the container 10 of the crystal growth apparatus having such a configuration,
It is evacuated to a degree of vacuum higher than 2×10 −6 Torr and sealed. When the above-mentioned crystal growth apparatus is placed in a furnace with a temperature gradient having a source crystal part temperature Ts and a crystal growth stability Tg as shown in the first drawing, the source crystal 12 in the high-temperature part becomes saturated with the solvent 14. The solution is diffused and transported through the temperature gradient, and the low temperature part (temperature Tg) of the heat sink 11 becomes a supersaturated solution. Therefore, heat sink 1
A single crystal of ZnSe precipitates and grows on the mirror surface of 1.
成長温度Ｔｇ：９５０°Ｃ１温度勾配ΔＴ＝１０°Ｃ／
ｃｍの条件の下て、溶媒１４のＳｅの比率を変えて結晶
成長を試みた。Ｓｅの混合比率Ｏ〜６０ｍｏｌ％におい
て、成長フロントがコンベックス形状のバルク状ＺｎＳ
ｅ単結晶が得られたが、６０ｍｏｌ％を越えると、成長
結晶の多結晶化が起こった。これは、溶媒のＳｅ比率が
高くなるに従い、ＺｎＳｅの溶解度の減少、溶媒とＺｎ
Ｓｅの比重か逆転することによるものと考えられる。ま
た、Ｓｅの比率の増大に伴い、蒸気圧も増加して爆発の
危険性か大きくなる。石英容器１０の耐圧を考慮すると
、容器１０内の圧力（蒸気圧）は１０ａｔｍ以下か望ま
しく、この面からも溶媒のＳｅ比率は、実質的に６０ｍ
０１％を上限にすることが好ましいと考えられる。Growth temperature Tg: 950°C1 Temperature gradient ΔT=10°C/
Crystal growth was attempted under conditions of cm and by changing the ratio of Se in solvent 14. Bulk ZnS with a convex growth front at a Se mixing ratio of 0 to 60 mol%
e single crystal was obtained, but when the amount exceeded 60 mol %, the grown crystal became polycrystalline. This is because as the Se ratio of the solvent increases, the solubility of ZnSe decreases and the solvent and Zn
This is thought to be due to the specific gravity of Se being reversed. Furthermore, as the proportion of Se increases, the vapor pressure also increases, increasing the risk of explosion. Considering the pressure resistance of the quartz container 10, it is desirable that the pressure (vapor pressure) inside the container 10 be 10 atm or less, and from this point of view as well, the Se ratio of the solvent is substantially 60 m
It is considered preferable to set the upper limit to 0.01%.
第５図は、異なる５ｅ−Ｔｅ溶媒混合比率の下で成長さ
せた結晶のカソードルミネッセンススペクトルの測定結
果を示す。第５図において、（ａ）、（ｂ）、（Ｃ）、
（ｄ）、（ｅ）はそれぞれ、溶媒１４の５ｅ−Ｔｅの比
率か６０：４０，４５：５５，３０ニア０，１０：９０
，０：１００１００（％）の場合である。FIG. 5 shows the measurement results of cathodoluminescence spectra of crystals grown under different 5e-Te solvent mixing ratios. In FIG. 5, (a), (b), (C),
(d) and (e) are the ratios of 5e-Te in solvent 14, respectively, 60:40, 45:55, 30 near 0, 10:90.
, 0:100100 (%).
Ｓｅの比率がＯ〜１０ｍｏｌ％（第５図（ｅ）〜（ｄ）
）においては、ハンド端のピークか長波長側ヘシフトし
ており、かつそれより長波長側にサブピークを有してい
る。これは成長結晶かＺｎＳｅ、−１Ｔｅ、の混晶系に
なっており、さらにキャップ内準位を生しているいるも
のと考えられる。The ratio of Se is O to 10 mol% (Fig. 5(e) to (d)
), the peak at the hand end is shifted to the longer wavelength side, and has a sub-peak on the longer wavelength side. It is thought that this is a grown crystal or a mixed crystal system of ZnSe and -1Te, and that an in-cap level is generated.
Ｓｅの混合比率か３０ｍｏｌ％以上（第５図（Ｃ）〜（
ａ））になると、ＺｎＳｅ本来のバンド端発光と考えら
れる単一ピークのみとなり、深い準位を含む発光はなく
なり、純青色の発光が得られた。The mixing ratio of Se is 30 mol% or more (Figure 5 (C) - (
In case a)), there was only a single peak, which is considered to be band edge emission inherent to ZnSe, and there was no emission including deep levels, and pure blue emission was obtained.
また、ＥＰＭＡ （ＥＤＳ）分析においても、Ｓｅ比率
０％、１０％の場合は、Ｔｅ濃度かそれぞれ２．８ａｔ
％、０．６ａｔ％であったが、Ｓｅ比率３０ｍｏｌ％に
おいては、Ｔｅは検出されなかった。従って、Ｓｅの比
率が実質的に３０ｍｏｌ％以上において、発光素子とし
て実用上利用可能なＺｎＳｅ単結晶が得られるとみなす
ことかできる。Also, in EPMA (EDS) analysis, when the Se ratio is 0% and 10%, the Te concentration is 2.8 at.
% and 0.6 at%, but Te was not detected at a Se ratio of 30 mol%. Therefore, it can be considered that when the proportion of Se is substantially 30 mol % or more, a ZnSe single crystal that can be practically used as a light emitting device can be obtained.
以上のことから、実用的なＺｎＳｅ単結晶が得られ、か
つバルク単結晶の成長が可能な、５ｅ−Ｔｅ混合溶液に
おけるＳｅの比率は、実質的に３０〜６０ｍｏｌ％とす
るのが好ましく、特に、３０〜４５ｍｏ １％が容器内
圧力と結晶成長安定性の観点から最適であることが判明
した。From the above, it is preferable that the ratio of Se in the 5e-Te mixed solution is substantially 30 to 60 mol%, and in particular, it is possible to obtain a practical ZnSe single crystal and grow a bulk single crystal. , 30-45mo 1% was found to be optimal from the viewpoint of pressure inside the container and stability of crystal growth.
以上、実施例に沿って本発明を説明したか、本発明はこ
れらに制限されるものではない。たとえば、種々の変更
、改良、組合せ等か可能なことは当業者に自明であろう
。Although the present invention has been described above with reference to examples, the present invention is not limited to these examples. For example, it will be obvious to those skilled in the art that various changes, improvements, combinations, etc. are possible.
以上説明したように、本発明によれば、ＺｎＳｅを溶解
拡散させる溶媒としてＳｅとＴｅの混合溶液を用い、し
かも混合液のＳｅの比率を実質的に３０〜６０ｍｏｌ％
とじたことにより、結晶の結晶成長速度が早くなる。As explained above, according to the present invention, a mixed solution of Se and Te is used as a solvent for dissolving and diffusing ZnSe, and the ratio of Se in the mixed solution is substantially 30 to 60 mol%.
By binding, the crystal growth rate of the crystal increases.
蒸気圧を低くできるので爆発の危険かなくなる。Since the vapor pressure can be lowered, there is no risk of explosion.
さらに、５ｅ−Ｔｅ混合溶液の比重がＺｎＳｅの比重を
上回り、従って、成長工程中にソース結晶や結晶成長核
か成長面に落下するようなことはなくなるのでバルク状
の単結晶か得られる。Furthermore, the specific gravity of the 5e-Te mixed solution exceeds the specific gravity of ZnSe, so that no source crystal or crystal growth nucleus falls onto the growth surface during the growth process, so that a bulk single crystal can be obtained.
そして、溶液のＳｅの比率を実質的に３０ｍ。Then, the Se ratio of the solution was substantially 30m.
１％以上に選択することにより、純青色スペクトル発光
を行う実用的なＺｎＳｅ半導体素子が得られる。By selecting 1% or more, a practical ZnSe semiconductor device that emits light in the pure blue spectrum can be obtained.
第１図は、本発明の実施例による結晶成長方法を行う成
長装置を温度勾配と共に示す断面図、第２図は、ＺｎＳ
ｅの各種溶媒に対する溶解度を示す各種飽和溶液中のＺ
ｎＳｅのモル分率のグラフ、
第３図は、各種溶媒の蒸気圧の温度依存性を示すグラフ
、
第４図は、ＺｎＳｅとＳｅとＴｅの密度比較を示すグラ
フ、
第５図は、混合比率の異なる５ｅ−Ｔｅ溶媒で成長させ
たＺｎＳｅ結晶のカソードルミネッセンススペクトル、
第６図は、ＺｎＳｅ結晶成長装置の断面図である。
図において、
１０ 結晶成長容器
１１ ヒートシンク
１２ ＺｎＳｅ多結晶（ソース結晶）１３
Ｓｅ溶媒
１４Ｓｅ−Ｔｅ混合溶媒
特許出願人 スタンレー電気株式会社FIG. 1 is a cross-sectional view showing a growth apparatus for carrying out a crystal growth method according to an embodiment of the present invention together with a temperature gradient, and FIG.
Z in various saturated solutions showing the solubility of e in various solvents
Figure 3 is a graph showing the temperature dependence of the vapor pressure of various solvents. Figure 4 is a graph showing the density comparison of ZnSe, Se, and Te. Figure 5 is the mixing ratio. Cathodoluminescence spectra of ZnSe crystals grown with different 5e-Te solvents. FIG. 6 is a cross-sectional view of a ZnSe crystal growth apparatus. In the figure, 10 crystal growth container 11 heat sink 12 ZnSe polycrystal (source crystal) 13
Se solvent 14Se-Te mixed solvent patent applicant Stanley Electric Co., Ltd.
Claims (2)
中からＺｎＳｅを成長結晶させる方法において、前記溶
媒としてＳｅとＴｅの混合溶液を用い、前記混合溶液に
おける前記Ｓｅの混合比率を実質的に３０〜６０ｍｏｌ
％としたＺｎＳｅ結晶の成長方法。(1) In the method of dissolving a source crystal of ZnSe in a solvent and growing and crystallizing ZnSe from the solvent, a mixed solution of Se and Te is used as the solvent, and the mixing ratio of Se in the mixed solution is substantially 30-60mol
% ZnSe crystal growth method.
度勾配の高温部に前記ソース結晶を配置し、前記温度勾
配の低温部において一定温度で前記ＺｎＳｅ結晶を成長
させるようにした請求項１記載のＺｎＳｅ結晶の成長方
法。(2) The solvent is placed in a predetermined temperature gradient, the source crystal is placed in a high temperature part of the temperature gradient, and the ZnSe crystal is grown at a constant temperature in a low temperature part of the temperature gradient. The method for growing a ZnSe crystal according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2331268A JP2575948B2 (en) | 1990-11-29 | 1990-11-29 | Method for growing ZnSe crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2331268A JP2575948B2 (en) | 1990-11-29 | 1990-11-29 | Method for growing ZnSe crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04198096A true JPH04198096A (en) | 1992-07-17 |
| JP2575948B2 JP2575948B2 (en) | 1997-01-29 |
Family
ID=18241792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2331268A Expired - Lifetime JP2575948B2 (en) | 1990-11-29 | 1990-11-29 | Method for growing ZnSe crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2575948B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037076A (en) * | 1983-08-08 | 1985-02-26 | Canon Inc | Input device |
-
1990
- 1990-11-29 JP JP2331268A patent/JP2575948B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037076A (en) * | 1983-08-08 | 1985-02-26 | Canon Inc | Input device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2575948B2 (en) | 1997-01-29 |
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