JPH04196491A - Photosensor - Google Patents
PhotosensorInfo
- Publication number
- JPH04196491A JPH04196491A JP2326609A JP32660990A JPH04196491A JP H04196491 A JPH04196491 A JP H04196491A JP 2326609 A JP2326609 A JP 2326609A JP 32660990 A JP32660990 A JP 32660990A JP H04196491 A JPH04196491 A JP H04196491A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- electrode layer
- low reflectivity
- film semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010936 titanium Substances 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 7
- 230000035945 sensitivity Effects 0.000 abstract description 14
- 230000003595 spectral effect Effects 0.000 abstract description 8
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 4
- 230000000007 visual effect Effects 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 44
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000282412 Homo Species 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は可視光センサなどに用いられる光センサに関す
る。DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to an optical sensor used as a visible light sensor or the like.
（ロ）従来の技術
アモルファスシリコンの如きアモルファス半導体等の薄
膜状光半導体層を光活性層とする光センサが実用化され
るに至ってきた。アモルファス半導体を用いた光センサ
は波長感度が可視光領域に高い感度をもっており、結晶
系半導体を用いたものより短波長領域に高感度であると
いう特長を有する。(b) Prior Art Optical sensors that use a thin film-like optical semiconductor layer such as an amorphous semiconductor such as amorphous silicon as a photoactive layer have come into practical use. Optical sensors using amorphous semiconductors have a high wavelength sensitivity in the visible light region, and have a feature that they are more sensitive in short wavelength regions than those using crystalline semiconductors.
第３図に従い従来の光センサについて説明する。A conventional optical sensor will be explained with reference to FIG.
第３図は従来の光センサを示す断面図である。FIG. 3 is a sectional view showing a conventional optical sensor.
第３図において、１は例えばガラス・石英等から成る透
光性の支持基板、２は該支持基板１の一方の主面に設け
られた感光領域で、該感光領域２は支持基板１側から透
明電極層３、薄膜状半導体層４及び裏面電極層５が順次
積層された構造を持つ。上記透明電極層３は酸化スズ（
ＳｎＯ，） ・酸化インジウムスズ（ＩＴＯ）等の透
光性導電性材料から成り、上記半導体層４はｐ型層、ｉ
型層、ｎ型層を重畳せしめたｐｉｎ接合を有する膜厚サ
ブミクロンないしミクロンオーダのアモルファスシリコ
ンにて形成される。更に上記裏面電極層５は該ｎ型アモ
ルファスシリコンとオーミック接触するアルミニウム（
Ａ１）層５１およびアルミニウムを保護する”ためこの
アルミニウム層上に設けられたチタン（Ｔ１）からなる
保護層５２から成っている。In FIG. 3, 1 is a transparent support substrate made of glass, quartz, etc., 2 is a photosensitive area provided on one main surface of the support substrate 1, and the photosensitive area 2 is viewed from the side of the support substrate 1. It has a structure in which a transparent electrode layer 3, a thin film semiconductor layer 4, and a back electrode layer 5 are sequentially laminated. The transparent electrode layer 3 is made of tin oxide (
SnO, ) - Made of a transparent conductive material such as indium tin oxide (ITO), the semiconductor layer 4 is a p-type layer, i
It is formed of amorphous silicon having a film thickness on the order of submicrons to microns and has a pin junction in which a type layer and an n-type layer are overlapped. Further, the back electrode layer 5 is made of aluminum (
A1) layer 51 and a protective layer 52 of titanium (T1) provided on this aluminum layer to protect the aluminum.
そして、上記支持基板ｌ並びに透明電極層３を透過して
光が薄膜半導体層４に照射せしめられると、上記画電極
３．５間に光起電力が生起せしめられる。When light is transmitted through the support substrate 1 and the transparent electrode layer 3 and irradiated onto the thin film semiconductor layer 4, a photovoltaic force is generated between the picture electrodes 3.5.
上述した従来の光センサにおいては、ＩＴＯ等の透光性
材料からなる透明電極層３を経て、薄膜半導体層４に入
射され、この薄膜半導体層４で吸収されない光は、裏面
電極層５で反射され、再び半導体層４に入射される。In the conventional optical sensor described above, light is incident on the thin film semiconductor layer 4 through the transparent electrode layer 3 made of a transparent material such as ITO, and the light that is not absorbed by the thin film semiconductor layer 4 is reflected by the back electrode layer 5. and enters the semiconductor layer 4 again.
（ハ）発明が解決しようとする課題
、 前述した裏面１を極５で反射さ隼再び半導体層４に
入射される反射光は、長波長側の光が大部分であり、こ
の反射光により生じる光起電力のため、従来の光センサ
は人間の視感度より長波長側の感度が高いという特性を
有する。そのため、従来は人間の視感度に合わせるため
に、光センサの前面に赤外線吸収フィルタを設ける必要
があった。(c) Problems to be solved by the invention: Most of the reflected light that is reflected from the back surface 1 by the pole 5 and re-injected into the semiconductor layer 4 is light on the long wavelength side, and is caused by this reflected light. Due to the photovoltaic force, conventional optical sensors have a characteristic of having higher sensitivity on the longer wavelength side than human visual sensitivity. Therefore, in the past, it was necessary to provide an infrared absorption filter in front of the optical sensor in order to match the visibility of humans.
本発明は上述した従来の問題点に鑑みてなされたものに
して、赤外線吸収フィルタを組み合わせることなく精度
の高い可視光測定用の光センサを提供することをその課
題とする。The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a highly accurate optical sensor for measuring visible light without combining an infrared absorption filter.
（ニ）課題を解決するための手段
本発明は、光入射側となる透光性基板の一主面に、透明
電極層、薄層状半導体層及び裏面電極層がこの順次で積
層された光センサであって、前記薄膜半導体層側に位置
する裏面電極層に反射率の低い金属を用いたことを特徴
とする。(d) Means for Solving the Problems The present invention provides an optical sensor in which a transparent electrode layer, a thin layered semiconductor layer, and a back electrode layer are laminated in this order on one principal surface of a light-transmitting substrate serving as a light incident side. It is characterized in that a metal with low reflectance is used for the back electrode layer located on the thin film semiconductor layer side.
（ホ）作用
本発明は、前記薄膜半導体層側に位置する裏面電極層に
反射率の低い金属を用いているので、裏面１ｉ［１層か
らの反射が抑制され、光センサの長波長側の感度が低く
なり、人間の視感度に近似した分光感度を持つ。(e) Effect In the present invention, since a metal with low reflectance is used for the back electrode layer located on the thin film semiconductor layer side, reflection from the back surface 1i [1 layer is suppressed, and the long wavelength side of the optical sensor is The sensitivity is lower, and the spectral sensitivity is close to that of the human eye.
（へ）実施例
以下、本発明の実施例につき第１図に従い説明する。尚
、従来例と同一部分には同一符合を付し説明を省略する
。(F) Example Hereinafter, an example of the present invention will be explained with reference to FIG. Incidentally, the same parts as those in the conventional example are given the same reference numerals, and the description thereof will be omitted.
第１図は本発明の一実施例を示した断面図であ第１図に
おいて、本発明の特徴は裏面電極層５０にある。本発明
の裏面電極層５０は、薄膜半導体層４側に位置する、即
ちｎ型アモルファスシリコンとオーミック接触する部分
に反射率の低い低反射率金属層５３が設けられる。この
実施例においては、膜厚１００Å以上のチタンからなる
低反射率金属層５３が、蒸着またはスパッタリングによ
り設けられている。そしてこの低反射金属層５３の上に
アルミニウム層５１およびアルミニウムを保護するチタ
ンからなる保護層５２を設けて裏面電極５０を構成して
いる。FIG. 1 is a sectional view showing an embodiment of the present invention. In FIG. 1, the feature of the present invention is a back electrode layer 50. In FIG. The back electrode layer 50 of the present invention is provided with a low reflectance metal layer 53 located on the side of the thin film semiconductor layer 4, that is, in a portion that is in ohmic contact with the n-type amorphous silicon. In this embodiment, a low reflectance metal layer 53 made of titanium and having a thickness of 100 Å or more is provided by vapor deposition or sputtering. Then, on this low-reflection metal layer 53, an aluminum layer 51 and a protective layer 52 made of titanium that protects the aluminum are provided to constitute the back electrode 50.
このように、薄膜半導体４側に位置する裏面電極５０に
低反射率金属層５３を設けることで、入射光の裏面電極
５ｏ側からの反射が抑えられ、光センサの長波長側の感
度が低くなり、人間の視感度に近似した分光特性が得ら
れる。In this way, by providing the low reflectance metal layer 53 on the back electrode 50 located on the thin film semiconductor 4 side, reflection of incident light from the back electrode 5o side is suppressed, and the sensitivity on the long wavelength side of the optical sensor is reduced. Therefore, spectral characteristics similar to human visibility can be obtained.
第２図は上述した第１図に示す本発明の実施例に係る光
センサ（Ａ）と第３図に示した従来の光センサ（Ｂ）の
分光特性を示す。この図より明らかなように、この発明
に係る光センサ（Ａ）は従来の光センサ（Ｂ）より、長
波長側の感度が低くなり、人間の視感度（Ｃ）に近似し
た分光特性が得られる。従って、赤外線吸収フィルタと
組み合わせることなく、人間の視感度に類似した精度の
高い可視光測定用の光センサを作成することができる。FIG. 2 shows the spectral characteristics of the optical sensor (A) according to the embodiment of the present invention shown in FIG. 1 described above and the conventional optical sensor (B) shown in FIG. 3. As is clear from this figure, the optical sensor (A) according to the present invention has lower sensitivity on the long wavelength side than the conventional optical sensor (B), and has spectral characteristics similar to human visual sensitivity (C). It will be done. Therefore, it is possible to create an optical sensor for measuring visible light with high accuracy similar to human visibility without combining it with an infrared absorption filter.
尚、上述した実施例においては、低反射率金属層５３と
して、チタンを用いたが、チタン以外にクロム（Ｃｒ）
やニッケル（Ｎ１）等を用いることができる。In the above-mentioned embodiment, titanium was used as the low reflectance metal layer 53, but in addition to titanium, chromium (Cr)
or nickel (N1) can be used.
（ト）発明の詳細
な説明したように、本発明は、薄膜半導体層側に位置す
る裏面電極層に反射率の低い金属を用いているので、裏
面１ｉ極層からの反射が抑制され、光センサの長波長側
の感度が低くなり、人間の視感度に近似した分光感度を
持ち、赤外線吸収フィルタと組み合わせることなく、構
造簡単にして精度の高い可視光測定用の光センサを作成
することができる。(G) As described in detail, the present invention uses a metal with low reflectivity for the back electrode layer located on the thin film semiconductor layer side, so reflection from the back electrode layer 1i is suppressed and light is The sensor's sensitivity on the long wavelength side is low, and it has a spectral sensitivity close to human visual sensitivity, making it possible to create a highly accurate optical sensor for visible light measurement with a simple structure and without combining it with an infrared absorption filter. can.
第１図は本発明の一実施例を示す断面図である。
第２図は本発明の実施例に係る光センサ（Ａ）と従来の
光センサ（Ｂ）の分光特性を示す特性図である。
第３図は従来装置を示す断面図である。
ｌ・・・基板、３・・・透明電極、４・・・半導体層、
５．５０・・・裏面電極、５１・・・アルミニウム層、
５２・・・保護層、５３・・・低反射金属層。
第１図
第３図FIG. 1 is a sectional view showing one embodiment of the present invention. FIG. 2 is a characteristic diagram showing the spectral characteristics of the optical sensor (A) according to the embodiment of the present invention and the conventional optical sensor (B). FIG. 3 is a sectional view showing a conventional device. l...Substrate, 3...Transparent electrode, 4...Semiconductor layer,
5.50... Back electrode, 51... Aluminum layer,
52... Protective layer, 53... Low reflection metal layer. Figure 1 Figure 3
Claims (2)
層、薄膜状半導体層及び裏面電極層がこの順次で積層さ
れた光センサであって、 前記薄膜半導体層側に位置する裏面電極層に反射率の低
い金属を用いたことを特徴とする光センサ。(1) An optical sensor in which a transparent electrode layer, a thin film semiconductor layer, and a back electrode layer are laminated in this order on one main surface of a light-transmitting substrate that is the light incident side, and the sensor is located on the thin film semiconductor layer side. An optical sensor characterized in that a metal with low reflectance is used for the back electrode layer.
を特徴とする請求項第１に記載した光センサ。(2) The optical sensor according to claim 1, wherein titanium is used as the metal with low reflectance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2326609A JP2950971B2 (en) | 1990-11-28 | 1990-11-28 | Light sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2326609A JP2950971B2 (en) | 1990-11-28 | 1990-11-28 | Light sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04196491A true JPH04196491A (en) | 1992-07-16 |
| JP2950971B2 JP2950971B2 (en) | 1999-09-20 |
Family
ID=18189720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2326609A Expired - Lifetime JP2950971B2 (en) | 1990-11-28 | 1990-11-28 | Light sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2950971B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003075617A1 (en) * | 2002-03-01 | 2003-09-12 | Sharp Kabushiki Kaisha | Light emitting device and display unit using the light emitting device and reading device |
-
1990
- 1990-11-28 JP JP2326609A patent/JP2950971B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003075617A1 (en) * | 2002-03-01 | 2003-09-12 | Sharp Kabushiki Kaisha | Light emitting device and display unit using the light emitting device and reading device |
| US7510300B2 (en) | 2002-03-01 | 2009-03-31 | Sharp Kabushiki Kaisha | Light emitting device and display apparatus and read apparatus using the light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2950971B2 (en) | 1999-09-20 |
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