JPH04196272A - Optical integrated device - Google Patents
Optical integrated deviceInfo
- Publication number
- JPH04196272A JPH04196272A JP33294290A JP33294290A JPH04196272A JP H04196272 A JPH04196272 A JP H04196272A JP 33294290 A JP33294290 A JP 33294290A JP 33294290 A JP33294290 A JP 33294290A JP H04196272 A JPH04196272 A JP H04196272A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- laser diode
- output
- integrated device
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000013307 optical fiber Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000005253 cladding Methods 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000020169 heat generation Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 240000004050 Pentaglottis sempervirens Species 0.000 description 2
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は光集積デバイスに関し、特にコンピュータ内
光配線などの光通信用デバイスに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to optical integrated devices, and particularly to optical communication devices such as optical wiring within computers.
第２図は従来の光通信用の個別変調型２点レーザダイオ
ードアレイを示す上面図である。図において、１はＧａ
Ａｓ基板、２，３は第１．第２のレーザダイオード、４
，５は前記第１．第２のレーザダイオード２，３におい
て個別に変調された出力光、６，７は第１．第２の光フ
ァイバである。FIG. 2 is a top view showing a conventional individually modulated two-point laser diode array for optical communications. In the figure, 1 is Ga
As substrates 2 and 3 are the first. second laser diode, 4
, 5 is the first. The output light is individually modulated in the second laser diode 2, 3, 6, 7 is the output light of the first laser diode 2, 3. This is the second optical fiber.
次に動作について説明する。Next, the operation will be explained.
第１．第２のレーザダイオード２，３に発振しきい値程
度のバイアス電流に加え変調電流を印加すると、各レー
ザダイオードが駆動し、前記各レーザダイオード２．３
で個別に変調された出力光４．５を光ファイバ６．７内
に各々導いて、光信号を伝達する。1st. When a modulation current is applied to the second laser diodes 2 and 3 in addition to a bias current approximately equal to the oscillation threshold, each laser diode is driven.
The individually modulated output lights 4.5 are each guided into optical fibers 6.7 to transmit optical signals.
コンピュータ内光配線などにレーザダイオードを適用す
る場合、近距離の通信であるため光出力は小さくてもよ
い（例えば数μＷ程度）。しかしなから、１システムに
つき数百〜数十万素子のレーザダイオードを使用するた
め、素子からの発熱か重大な問題となっている。本従来
例に示すような個別変調型のレーザダイオードアレイを
使用した場合、ｌ光配線当たり１本のレーザダイオード
が必要であり、■素子筒たりの動作電流が約３０ｍＡで
あることから全システムで数ＫＷ以上の電力か必要とさ
れることになる。When a laser diode is applied to optical wiring inside a computer, the optical output may be small (for example, about several μW) because it is a short-distance communication. However, since hundreds to hundreds of thousands of laser diode elements are used in one system, heat generation from the elements has become a serious problem. When using an individually modulated laser diode array as shown in this conventional example, one laser diode is required per optical wiring, and the operating current per element tube is approximately 30 mA, so the entire system requires only one laser diode. A power of several kilowatts or more will be required.
以上のように従来の個別変調型レーザアレイを使用する
と各レーザダイオード毎にしきい値電流以上の動作電流
が流れるため、多数の素子を使用するシステムでは、大
量の熱の発生により支障をきたすなどの問題点かあった
。As described above, when using a conventional individually modulated laser array, an operating current exceeding the threshold current flows for each laser diode, which can cause problems such as generation of large amounts of heat in systems using a large number of elements. There were some problems.
この発明は上記のような問題点を解消するためになされ
たもので、光配線におけるｌ信号光たりの発熱を抑え、
消費電力を低減することかできる光集積デバイスを得る
ことを目的とする。This invention was made to solve the above problems, and it suppresses the heat generated by the l signal light in optical wiring,
The purpose of this invention is to obtain an optical integrated device that can reduce power consumption.
この発明に係る光集積デバイスは同一基板上に１個のレ
ーザダイオードと、該レーザダイオードからの出力光を
複数に分岐できる光導波路と、分岐した出力光数に対応
した外部変調器とを組み合わせたものである。The optical integrated device according to the present invention combines a single laser diode, an optical waveguide capable of branching the output light from the laser diode into multiple parts, and an external modulator corresponding to the number of branched output lights on the same substrate. It is something.
この発明における光集積デバイスは、１個のレーザダイ
オードから出力された光を複数に分岐し、分岐した各々
の出力光に対し、外部変調器によって個別に変調し、出
力するから、多数の素子に動作電流を流すことによる大
量の熱の発生か抑えられる。The optical integrated device according to the present invention branches the light output from one laser diode into a plurality of parts, modulates each branched output light individually by an external modulator, and outputs it. The generation of a large amount of heat due to the flow of operating current can be suppressed.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明の一実施例による光集積デバイスの上
面図であり、図において、１はＧａＡｓ基板、１０はＧ
ａＡｓ基板１上に形成されたレーザダイオード、ＩＩは
Ｙ分岐先導波路、１２，１３は前記Ｙ分岐光導波路１１
によって分岐された無変調の第１．第２の出力光、１４
．１５は第１゜第２のＭＱＷ光変調器、１６．１７は前
記第１゜第２の光変調器１４．１５によって変調された
第１、第２の出力光である。本実施例てはＹ分岐光導波
路ＩＩ及びＭＱＷ光変調器１４．１５もＧａＡｓ基板１
上に形成されている。FIG. 1 is a top view of an optical integrated device according to an embodiment of the present invention. In the figure, 1 is a GaAs substrate, 10 is a G
A laser diode formed on an aAs substrate 1, II is a Y-branch leading waveguide, and 12 and 13 are the Y-branch optical waveguides 11.
The unmodulated first . second output light, 14
．． 15 is a 1° second MQW optical modulator, and 16.17 is the first and second output light modulated by the 1° second optical modulator 14.15. In this embodiment, the Y-branch optical waveguide II and the MQW optical modulators 14 and 15 are also made of GaAs substrate 1.
formed on top.
次に動作について説明する。Next, the operation will be explained.
第１図において、レーザダイオードＩＯには一定のＤＣ
電圧か印加されている。レーザダイオード１０からの光
出力光はＹ分岐光導波路１１に入射して無変調の第１．
第２の出力光１２．１３の２本に分岐され、さらに該第
１．第２の出力光１２．１３はＭＱＷ光変調器１４．１
５にそれぞれ入射し、個別に変調される。変調された光
出力１６．１７はそれぞれ別個の光ファイバ６．７に入
射し、伝送される。In Figure 1, the laser diode IO has a constant DC
Voltage is applied. The optical output light from the laser diode 10 enters the Y-branch optical waveguide 11 and is transmitted to the unmodulated first .
The second output light 12.13 is branched into two beams, and the first output light 12. The second output light 12.13 is an MQW optical modulator 14.1
5 and are individually modulated. The modulated optical outputs 16.17 each enter a separate optical fiber 6.7 and are transmitted.
本発明の光集積デバイスの構造について、第３図を用い
てさらに詳しく説明する。The structure of the optical integrated device of the present invention will be explained in more detail with reference to FIG.
第３図はこの発明の一実施例による光集積デバイスを示
す鳥轍図である。図において、２０はｎ−ＡｌＧａＡｓ
上クラッド層、２１はＭＱＷ活性層、２２はｐ−ＡｌＧ
ａＡｓ上クラッド層、２３はｐ−ＧａＡｓコンタクト層
、２４はレーザダイオードのＰ電極、２５は第１の変調
器１４のＰ電極、２６は第２の変調器１５のＰ電極、２
７は共通電極、２８はレーザダイオード１０と導波路１
１を分離する分離溝である。FIG. 3 is a bird's-eye view showing an optical integrated device according to an embodiment of the present invention. In the figure, 20 is n-AlGaAs
Upper cladding layer, 21 is MQW active layer, 22 is p-AlG
aAs upper cladding layer; 23, p-GaAs contact layer; 24, P electrode of the laser diode; 25, P electrode of first modulator 14; 26, P electrode of second modulator 15;
7 is a common electrode, 28 is a laser diode 10 and a waveguide 1
This is a separation groove that separates 1.
この光集積デバイスの作成方法は、先ずＧａＡｓ基板１
上にｎ−ＡｌＧａＡｓ上クラッド層２０、ＭＱＷ活性層
２１、ｐ−ＡｌＧａＡｓ上クラッド層２２、ｐ−ＧａＡ
ｓコンタクト層２３の各層を成長した後、全面に電極金
属を蒸着してＰ電極２４．２５．２６に成形し、ドライ
エツチング等で第３図に示すＹ分岐の形状にする。この
時同時に分離溝２８も形成する。また、この時、Ｙ分岐
光導波路１１と光変調器１４．１５とを分離する溝（図
示せず）を設けてもよい。次にＧａＡｓ基板１の裏面に
共通電極２７を形成する。The method for manufacturing this optical integrated device begins with a GaAs substrate 1.
Above are an n-AlGaAs upper cladding layer 20, an MQW active layer 21, a p-AlGaAs upper cladding layer 22, and a p-GaA
After each layer of the s-contact layer 23 is grown, electrode metal is deposited on the entire surface to form P-electrodes 24, 25, and 26, and then dry etched or the like is formed into the Y-branch shape shown in FIG. 3. At this time, separation grooves 28 are also formed at the same time. Further, at this time, a groove (not shown) may be provided to separate the Y-branch optical waveguide 11 and the optical modulators 14 and 15. Next, a common electrode 27 is formed on the back surface of the GaAs substrate 1.
第３図において、レーザダイオード１０上のＰ電極２４
と共通電極２７との間に順方向の一定直流電圧を加える
ことによってレーザダイオードを発光させ、一方、第１
．第２の光変調器１４，１５上のＰ電極２５．２６と共
通電極２７との間に逆方向の電圧を加えることにより、
ＭＱＷ活性層２１の量子シュタルク効果によって吸収係
数を変化させ、変調を行うものである。In FIG. 3, a P electrode 24 on the laser diode 10
The laser diode emits light by applying a constant forward DC voltage between the first electrode and the common electrode 27.
．． By applying a voltage in the opposite direction between the P electrodes 25, 26 on the second optical modulators 14, 15 and the common electrode 27,
The absorption coefficient is changed by the quantum Stark effect of the MQW active layer 21 to perform modulation.
第１図の光集積デバイスにおいてＹ分岐光導波路１１及
びＭＱＷ変調器−１４，１５ての損失は例えば１０ｄＢ
程度であり、レーザダイオード１０の光出力を５ｍＷと
すると変調された出力光１６゜１７はそれぞれ２５０μ
Ｗ程度であり、近距離の光通信への出力としては充分で
ある。従来の光集積デバイスでは２ビームの光出力を得
るのに２つのレーザダイオードを必要としたが、本実施
例では１つのレーザダイオードで２ビームの出力か得ら
れるので、従って従来例の場合の１／２の電力て２ビー
ムの個別変調か行えることになる。In the optical integrated device shown in FIG.
If the optical output of the laser diode 10 is 5 mW, the modulated output light 16°17 is 250 μm each.
It is approximately W, which is sufficient for output for short-distance optical communication. In conventional optical integrated devices, two laser diodes were required to obtain two beams of optical output, but in this embodiment, two beams of output can be obtained with one laser diode. Individual modulation of two beams can be performed with a power of /2.
このように本実施例においては、１個のレーザダイオー
ドから出力された光を光導波路で複数に分岐し２分岐し
た各々の出力光に対して外部変調器によって個別に変調
するようにしたのて、消費電力を低減し、発熱を抑制で
きる。In this way, in this embodiment, the light output from one laser diode is branched into a plurality of parts by an optical waveguide, and each of the two branched output lights is individually modulated by an external modulator. , can reduce power consumption and suppress heat generation.
なお、上記実施例では２ビームを例にあげたか、さらに
ビーム数を多くすることにより本発明の効果を大きくす
ることかできる。上記実施例で用いたＹ分岐光導波路１
１を用いた場合には１０ビ一ム程度まで可能であり、こ
の場合１０ビームの個々の変調は従来例のように１０個
のレーザダイオードを必要とせず１つのレーザダイオー
ドで行うため、その動作電力は従来の場合の１／ＩＯと
なる。In the above embodiment, two beams are used as an example, but the effect of the present invention can be increased by further increasing the number of beams. Y-branch optical waveguide 1 used in the above example
1, it is possible to modulate up to about 10 beams, and in this case, individual modulation of the 10 beams is done with one laser diode instead of 10 laser diodes as in the conventional example, so its operation is The power is 1/IO of the conventional case.
また、上記実施例ではＧａＡｓ基板を用いたか他の材料
、例えば、ＩｎＰ系基板を用いてもよい。Further, in the above embodiments, a GaAs substrate is used, but other materials such as an InP-based substrate may also be used.
また、Ｙ分岐以外の形状の光導波路を用いてもよく、Ｍ
ＱＷ変調器以外の変調器を用いても同様の効果が得られ
る。Furthermore, an optical waveguide having a shape other than Y branch may be used, and M
Similar effects can be obtained using modulators other than the QW modulator.
以上のようにこの発明に係る光集積デバイスによれば、
同一基板上にレーザダイオードと光分岐路と光変調器と
を集積し、１本のレーザ光を数本に分岐し、各々の出力
光に対し個別変調を行う構成としたので、低消費電力化
か可能となり、発熱を抑制することかできる効果かある
。As described above, according to the optical integrated device according to the present invention,
The laser diode, optical branch path, and optical modulator are integrated on the same substrate, and one laser beam is split into several beams, and each output beam is individually modulated, resulting in low power consumption. It has the effect of suppressing heat generation.
第１図はこの発明の一実施例による光集積デバイスの上
面図、第２図は従来のアレイレーザを示す上面図、第３
図はこの発明の一実施例による光集積デバイスを示す鳥
撤図である。
図において、■はＧａＡｓ基板、２，３はレーザダイオ
ード、４．５はアレイレーザからの出力光、６，７は光
ファイバー、１０はレーザダイオード、１１はＹ分岐光
導波路、１２．１３は無変調の出力光、１４．１５はＭ
ＱＷ変調器、１６゜１７は変調された出力光、２０はｎ
−ＡｌＧａＡｓ上クラッド層、２１はＭＱＷ活性層、２
２はｐ−ＡｌＧａＡｓ上クラッド層、２３はｐ−ＧａＡ
ｓコンタクト層、２４，２５．２６はＰ電極、２７は共
通電極、２８は分離溝である。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a top view of an optical integrated device according to an embodiment of the present invention, FIG. 2 is a top view of a conventional array laser, and FIG.
The figure is a bird's-eye view showing an optical integrated device according to an embodiment of the present invention. In the figure, ■ is a GaAs substrate, 2 and 3 are laser diodes, 4.5 is the output light from the array laser, 6 and 7 are optical fibers, 10 is a laser diode, 11 is a Y branch optical waveguide, and 12 and 13 are non-modulated. output light, 14.15 is M
QW modulator, 16°17 is modulated output light, 20 is n
-AlGaAs upper cladding layer, 21 is MQW active layer, 2
2 is p-AlGaAs upper cladding layer, 23 is p-GaA
s contact layer, 24, 25, 26 are P electrodes, 27 is a common electrode, and 28 is a separation groove. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
以上の出力光に分岐する光導波路と、分岐された出力光
を変調する、分岐された光導波路数と同数の外部光変調
器とを同一基板上に備えたことを特徴とする光集積デバ
イス。(1) In an optical integrated device, a laser diode, an optical waveguide that branches the output light from the laser diode into at least two output lights, and a number of branched optical waveguides that modulate the branched output light. An optical integrated device comprising the same number of external optical modulators on the same substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33294290A JPH04196272A (en) | 1990-11-27 | 1990-11-27 | Optical integrated device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33294290A JPH04196272A (en) | 1990-11-27 | 1990-11-27 | Optical integrated device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04196272A true JPH04196272A (en) | 1992-07-16 |
Family
ID=18260530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33294290A Pending JPH04196272A (en) | 1990-11-27 | 1990-11-27 | Optical integrated device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04196272A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1886389A1 (en) * | 2005-05-30 | 2008-02-13 | Phoxtal Communications Ab | Integrated chip |
-
1990
- 1990-11-27 JP JP33294290A patent/JPH04196272A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1886389A1 (en) * | 2005-05-30 | 2008-02-13 | Phoxtal Communications Ab | Integrated chip |
| EP1886389A4 (en) * | 2005-05-30 | 2011-03-30 | Phoxtal Comm Ab | Integrated chip |
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