CN107026391A - Multi-wavelength hybrid integrated light emission array - Google Patents
Multi-wavelength hybrid integrated light emission array Download PDFInfo
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- CN107026391A CN107026391A CN201710290251.1A CN201710290251A CN107026391A CN 107026391 A CN107026391 A CN 107026391A CN 201710290251 A CN201710290251 A CN 201710290251A CN 107026391 A CN107026391 A CN 107026391A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention provides a kind of multi-wavelength hybrid integrated light emission array, including multiple smooth processing units, each light processing unit includes：One active optical component, comprising the first substrate, first backing material is III V races semi-conducting material, for launching laser；One beam splitting fiber waveguide, comprising the second substrate, the material of the second substrate is identical with the first substrate, for by the laser beam splitter, forming beam splitting laser.In the present invention, active optical component and the substrate of beam splitting fiber waveguide are same III V races semi-conducting material, the light loss that different materials coupling is caused is reduced, the power consumption of light emission array is advantageously reduced, and improve the preparation technology and size of multi-wavelength hybrid integrated light emission array.
Description
Technical field
The present invention relates to field of semiconductor integration technology, more particularly to a kind of multi-wavelength hybrid integrated light emission array.
Background technology
Integreted phontonics greatly reduce the size and power consumption of optical module compared to discrete function optical device, are following real
The key technology that existing Large Copacity, low-power consumption optical-fiber network are had to rely on.And high speed multi-wavelength hybrid integrated light emission array is even more
The core component of high-speed optical transmission network.The composition of common multiwavelength laser emission array is that InP (indium phosphide) bases DFB (divides
Cloth feedback laser) laser of multi-wavelength is produced, laser is parallel into lithium niobate after the Y type fiber waveguide beam splitting in silicon substrate
Fiber waveguide is modulated, and intensity modulated is realized after then closing beam through silicon substrate Y waveguide again.Silicon substrate fiber waveguide is smaller due to being lost, and
Its refractive index can be mediated by doping, be a kind of material of preferable fiber waveguide.But it is due to optical active devices
There is certain light loss in integrated between mostly III-V group semi-conductor material, the optical device of different materials, and preparation technology is multiple
It is miscellaneous.In addition, the size of silicon substrate Y type fiber waveguides is larger, it is the challenge that integreted phontonics technology faces.
The content of the invention
(1) technical problem to be solved
It is an object of the invention to provide a kind of multi-wavelength hybrid integrated light emission array, to solve at least one above-mentioned
Technical problem.
(2) technical scheme
It is an object of the invention to provide a kind of multi-wavelength hybrid integrated light emission array, including multiple smooth processing units,
Each light processing unit includes：
One active optical component, for launching laser, comprising the first substrate, first substrate is Group III-V semiconductor material
Material；
One beam splitting fiber waveguide, for by laser beam splitter formation beam splitting laser, including the second substrate, the material of the second substrate
Material is identical with the first substrate.
Alternatively, the III-V group semi-conductor material includes indium phosphide.
Alternatively, each light processing unit also includes：
A pair of parallel fiber waveguide, is connected with the beam splitting fiber waveguide, the phase for changing the beam splitting laser；
Three traveling wave electrodes, for providing modulation voltage for the parallel optical waveguide；
One combined beam light waveguide, is connected with the parallel optical waveguide, for the beam splitting laser after phase-modulation to be carried out into conjunction beam,
Formed and close Shu Jiguang.
Alternatively, in addition to：
Array waveguide grating, for the multi beam of multiple smooth processing unit transmittings to be closed into Shu Jiguang, is combined into a branch of multi-wavelength
Laser.
Alternatively, the backing material of the combined beam light waveguide is identical with the material of the first substrate.
Alternatively, the active optical component also includes：
One cushion, on first substrate；
One active layer, on the cushion；
One grating layer, on the active layer；
Ducting layer on one first, on the grating layer.
Alternatively, the grating layer of beam splitting fiber waveguide side is coated with anti-reflection film, and the opposite side of grating layer is coated with high-reflecting film.
Alternatively, the beam splitting fiber waveguide also includes：
One cushion, on second substrate；
One sandwich layer, on the cushion；
Ducting layer on one second, on the sandwich layer.
Alternatively, on the first buffer layer, active layer, first fiber waveguide that ducting layer is constituted width, with institute
The change for stating the energy gap of sandwich layer diminishes greatly.
Alternatively, the parallel optical waveguide material is lithium niobate.
(3) beneficial effect
The present invention has advantages below compared to prior art：
(1) active optical component is mostly III-V group semi-conductor material, therefore uses III-V group semi-conductor material for substrate
Beam splitting fiber waveguide can greatly simplify the preparation technology of light emission array, improve yield rate；
(2) due to using identical III-V group semi-conductor material between active optical component and passive beam splitting fiber waveguide, so
It can greatly reduce because different materials couple the light loss caused, be conducive to the reduction of light emission array power consumption；
(3) although the loss that causes of silicon substrate beam splitting fiber waveguide material is smaller, the size of silicon substrate beam splitting waveguide is very big, adopts
After InP-base beam splitting fiber waveguide, the size of multiwavelength laser emission array can be substantially reduced；
(4) combined beam light waveguide equally uses III-V group semi-conductor material, AWG (battle arrays that so can be with InP-base below
Train wave guide grating) it is integrated well, for the loss of the integrated emission array of light, preparation technology and size etc. have improvement；
(5) in modulator, the material of the parallel optical waveguide of phase-modulation uses lithium niobate, the modulation of light emission array single channel
Bandwidth can reach tens of GHzs.
Brief description of the drawings
Fig. 1 is the structural representation of the multi-wavelength hybrid integrated light emission array of the embodiment of the present invention；
Fig. 2 is the active optical component and beam splitting fiber waveguide schematic diagram of the embodiment of the present invention.
Embodiment
In the prior art, multiwavelength laser emission array is main by InP (indium phosphide) bases Distributed Feedback Laser, silicon substrate Y type beam splitting
Fiber waveguide, modulator and silicon substrate Y type combined beam lights waveguide composition.Although the loss of silicon substrate fiber waveguide is smaller, and its refractive index can be with
It is mediated by doping, is a kind of material of preferable fiber waveguide.But it is due to that optical active devices are generally iii-v half
There is certain light loss in integrated between conductor material, the optical device of different materials, and preparation technology is complicated.In addition, silicon substrate Y
The size of type fiber waveguide is larger, is the challenge that integreted phontonics technology faces.Based on aforementioned technical problem, the invention provides
A kind of multi-wavelength hybrid integrated light emission array, active optical component and passive beam splitting fiber waveguide are using identical iii-v half
Conductor material is used as substrate.In addition, the present invention additionally uses multiple active optical components, the laser of different wave length, shape can be launched
Into the hybrid integrated of multiwavelength laser.Because high-reflecting film is the higher reflectance coating of reflectivity, in general, the reflectivity of high-reflecting film
More than or equal to 90%, most of incident light or almost all incident light can be reflected back, therefore, the present invention is in order that grating
Other light energy reflecteds that structure selectes outside pattern return to be converted to lasing mould energy, so as to strengthen the laser energy of transmitting, carry
The high efficiency of the multi-wavelength hybrid integrated light emission array.
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
Fig. 1 is the structural representation of the multi-wavelength hybrid integrated light emission array of the embodiment of the present invention, as shown in figure 1, this
Inventive embodiments provide a kind of multi-wavelength hybrid integrated light emission array, including multiple smooth processing units, and each light processing is single
Member includes：Active optical component 1, beam splitting fiber waveguide 2, parallel optical waveguide 3, traveling wave electrode 4, combined beam light waveguide 5 and AWG6.Wherein,
Active optical component 1 launches laser；Beam splitting fiber waveguide 2 receives the laser that active optical component 1 is launched, and it is split, and obtains
Beam splitting laser simultaneously conducts beam splitting laser to parallel optical waveguide 3；Parallel optical waveguide 3 is received after beam splitting laser, with reference to traveling wave electrode 4
The modulation voltage of offer enters the change of line phase to it.Combined beam light waveguide 5 receives beam splitting laser, and it is carried out to close beam processing,
Formed and close Shu Jiguang.The multi beam that finally multiple units are launched closes beam Laser emission to 6, AWG6 couples of AWG (array beamses grating)
Multi beam closes Shu Jiguang and is combined, and obtains a branch of multiwavelength laser, and the multi-beam laser is transmitted by an optical fiber.
Wherein, active optical component 1, such as DFB (distributed feedback laser) active area, includes the first substrate, the first lining
Bottom material is Group III-V semiconductor.The material of first substrate is identical with the material of the second substrate of beam splitting fiber waveguide 2, active light
Device 1 and beam splitting fiber waveguide 2 (the Y type beam splitting fiber waveguide that can select deep ridge optical waveguide structure) are by active-passive end coupling
Conjunction method is coupled, because the two backing material is identical, can be greatly reduced because different materials couple the light loss caused,
Be conducive to the reduction of light emission array power consumption, meanwhile, the beam splitting fiber waveguide 2 for using III-V group semi-conductor material to be substrate can be with
The preparation technology of light emission array is greatly simplified, yield rate is improved.Because indium phosphide is most commonly seen, in the art using the most
Extensively, therefore, the Group III-V semiconductor selection indium phosphide in the embodiment of the present invention, can also be GaAs in other embodiments
Other III-Vs such as (GaAs), GaN (gallium nitride).
According to an embodiment of the present, combined beam light waveguide 5 also selects the deep ridge light wave as beam splitting fiber waveguide
The InP-base Y type fiber waveguides of guide structure, deep ridge optical waveguide structure has the advantages that the unrelated and small bending radius of polarization, favorably
In reduction size, integrated level is improved.
Further, the material of parallel optical waveguide can use lithium niobate, and lithium niobate has good electrooptic effect, short
Response time and wider transparency wavelength range, are preferable modulation materials.Because beam of laser is beamed into by beam splitting fiber waveguide
Two beam laser, therefore, the present invention set a pair of parallel fiber waveguide, three traveling wave electrodes for being placed in parallel with parallel optical waveguide, often
Two traveling wave electrodes provide modulation voltage to a parallel optical waveguide, and different modulation voltages is carried on parallel optical waveguide,
The refractive index of lithium niobate can be caused to change, so that the phase of the consistent beam splitting laser of script phase also accordingly occurs
Change.Beam splitting laser after phase change forms after combined beam light waveguide and closes Shu Jiguang, meanwhile, close Shu Jiguang intensity
Can accordingly it change.For example, the phase of two beam beam splitting lasers differs 180 °, then its intensity for closing Shu Jiguang is 0；If two beams point
Shu Jiguang phase is not changed, then its intensity for closing Shu Jiguang will not also change, and the tune for closing beam laser intensity is realized with this
System.
Further, because AWG6 is InP-base AWG, in order to preferably integrated with AWG6, reduce caused by material is different
Light loss, therefore, the combined beam light waveguide 5 in the present embodiment are also InP substrate.
Fig. 2 is the active optical component and beam splitting fiber waveguide schematic diagram of the embodiment of the present invention, as shown in Fig. 2 active optical component 1
Including：
One first substrate 11, in embodiments of the present invention, the material of the first substrate 11 is that InP (can also be other III-V
Race's semiconductor).
One first buffer layer 12, on first substrate 11, in the embodiment of the present invention, also selects InP semiconductor materials
Material.
One active layer 13, on the cushion 12, using the strain InGaAsP MQWs of lattice matched materials,
Wherein, using the different materials of active layer 13, the optical maser wavelength of active optical component transmitting is also different, so as to realize that multi-wavelength swashs
The purpose of light hybrid integrated.
One grating layer 14, on the active layer 13, wherein, grating layer 14 can be by holographic interference exposure method, double
Beam interference method or nano-imprint method are produced.In addition, because in active optical component, there is laser generation situation, therefore, this
Grating layer (i.e. along the grating layer of optical path direction) of the inventive embodiments in beam splitting fiber waveguide side is coated with anti-reflection film, in grating layer
Opposite side be coated with high-reflecting film, its reflectivity is more than or equal to 90%, can reflect most of incident light or almost all incident light
Go back, while other light energy reflecteds for making optical grating construction select outside pattern return to be converted to lasing mould energy, so as to strengthen hair
The laser energy penetrated.
Ducting layer 15 on one first, is lattice matched InP ducting layer on the grating layer 14.
According to an embodiment of the present, beam splitting fiber waveguide 2 includes：
One second substrate 21, the material of second substrate 21 should be consistent with the first substrate 11, therefore uses InP, at other
In embodiment, active optical component 1 and beam splitting fiber waveguide 2 can share same substrate；
One second buffer layer 22, on second substrate 21, second buffer layer 22 can also be selected and the first buffering
12 identical material of layer, or the beam splitting fiber waveguide 2 can share same cushion, i.e. first buffer layer with active optical component 1
12 and second buffer layer 22 be same cushion.
One sandwich layer 23, on the cushion 22, sandwich layer 23 is InGaAsP sandwich layers；Ducting layer 24 is mixed to be non-on second
Miscellaneous or semi-insulating InP, to reduce material absorption loss.
Ducting layer 24 on one second, on the sandwich layer 23, ducting layer in first buffer layer 12, active layer 13, first
15 constitute a fiber waveguides, and the width of the fiber waveguide is different and different with the energy gap of InGaAsP sandwich layers, selection
The energy gap of sandwich layer is smaller, and when satisfaction polarization is unrelated, the width of the fiber waveguide is larger, and photoetching process tolerance is larger.
To sum up, the multi-wavelength hybrid integrated light emission array provided by the present invention, can greatly simplify light emission array
Preparation technology, improve yield rate, reduce light emission array power consumption, modulation bandwidth can reach tens of GHzs, while can be with
The size of multiwavelength laser emission array is substantially reduced, its preparation technology and size etc. are all had greatly improved.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in the protection of the present invention
Within the scope of.
Claims (10)
1. a kind of multi-wavelength hybrid integrated light emission array, it is characterised in that including multiple smooth processing units, each light processing is single
Member includes：
One active optical component, for launching laser, comprising the first substrate, first substrate is III-V group semi-conductor material；
One beam splitting fiber waveguide, for by laser beam splitter formation beam splitting laser, comprising the second substrate, the material of the second substrate with
First substrate is identical.
2. multi-wavelength hybrid integrated light emission array according to claim 1, it is characterised in that the iii-v is partly led
Body material includes indium phosphide.
3. multi-wavelength hybrid integrated light emission array according to claim 1, it is characterised in that each light processing unit is also
Including：
A pair of parallel fiber waveguide, is connected with the beam splitting fiber waveguide, the phase for changing the beam splitting laser；
Three traveling wave electrodes, for providing modulation voltage for the parallel optical waveguide；
One combined beam light waveguide, is connected with the parallel optical waveguide, for the beam splitting laser after phase-modulation to be carried out into conjunction beam, is formed
Close Shu Jiguang.
4. multi-wavelength hybrid integrated light emission array according to claim 3, it is characterised in that also include：
Array waveguide grating, for the multi beam of multiple smooth processing unit transmittings to be closed into Shu Jiguang, is combined into a branch of multiwavelength laser.
5. multi-wavelength hybrid integrated light emission array according to claim 3, it is characterised in that the combined beam light waveguide
Backing material is identical with the material of the first substrate.
6. multi-wavelength hybrid integrated light emission array according to claim 1, it is characterised in that the active optical component is also
Including：
One cushion, on first substrate；
One active layer, on the cushion；
One grating layer, on the active layer；
Ducting layer on one first, on the grating layer.
7. multi-wavelength hybrid integrated light emission array according to claim 6, it is characterised in that beam splitting fiber waveguide side
Grating layer is coated with anti-reflection film, and the opposite side of grating layer is coated with high-reflecting film.
8. the multi-wavelength hybrid integrated light emission array according to claim 1 or 7, it is characterised in that the beam splitting light wave
Leading also includes：
One cushion, on second substrate；
One sandwich layer, on the cushion；
Ducting layer on one second, on the sandwich layer.
9. multi-wavelength hybrid integrated light emission array according to claim 8, it is characterised in that buffered by described first
Layer, active layer, on first the fiber waveguide that ducting layer is constituted width, diminish as the change of the energy gap of the sandwich layer is big.
10. multi-wavelength hybrid integrated light emission array according to claim 3, it is characterised in that the parallel optical waveguide
Material is lithium niobate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710290251.1A CN107026391A (en) | 2017-04-27 | 2017-04-27 | Multi-wavelength hybrid integrated light emission array |
| PCT/CN2018/083892 WO2018196689A1 (en) | 2017-04-27 | 2018-04-20 | Multi-wavelength hybrid integrated light emitting array |
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| CN201710290251.1A CN107026391A (en) | 2017-04-27 | 2017-04-27 | Multi-wavelength hybrid integrated light emission array |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107611775A (en) * | 2017-09-28 | 2018-01-19 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor laser and preparation method thereof |
| WO2018196689A1 (en) * | 2017-04-27 | 2018-11-01 | 中国科学院半导体研究所 | Multi-wavelength hybrid integrated light emitting array |
| WO2020069674A1 (en) * | 2018-10-01 | 2020-04-09 | Huawei Technologies Co., Ltd. | Systems and method of multi-laser wavelength control |
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Cited By (5)
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| WO2018196689A1 (en) * | 2017-04-27 | 2018-11-01 | 中国科学院半导体研究所 | Multi-wavelength hybrid integrated light emitting array |
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| WO2020069674A1 (en) * | 2018-10-01 | 2020-04-09 | Huawei Technologies Co., Ltd. | Systems and method of multi-laser wavelength control |
| US10979167B2 (en) | 2018-10-01 | 2021-04-13 | Huawei Technologies Co., Ltd. | Systems and method of multi-laser wavelength control |
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| WO2018196689A1 (en) | 2018-11-01 |
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