JPH04193950A - Planar magnetron sputtering device - Google Patents

Abstract

PURPOSE:To attain the uniform sputtering of a target by rotating a couple of N-pole and S-pole of a permanent magnet in parallel to a face which is not contact with the plasma of the target, and simultaneously moving the poles in parallel to a direction perpendicular to an electric field impressing to the target. CONSTITUTION:Cooling water is introduced into a water jacket 105 from an introducing hole 110, and gaseous mixture of N2 and Ar is introduced into a sputtering room to be at a prescribed pressure. Then the motor 104 is revolved and S-pol and N-pol of a permanent magnet are rotated via a rotation axis 103, and the fixing base 107 of the motor 104 is moved in parallel along a rail 108 and simultaneously the rail 108 is moved in parallel along a rail 109. Accordingly, the central point of a couple of S-pol 101 and N-pol 102 of the permanent magnet is moved over the whole face of the target 106. By this method the target 106 is sputtered uniformly and utilization efficiency is improved the generation of particles is suppressed and high-quality thin films are accumulated the treated body.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of an electrode of a planar magnetron sputtering device.

[Prior Art] The electrode structure of a conventional planar magnetron sputtering apparatus is such that a pair of N pole 201 and S pole 202 of a permanent magnet rotatable by an electric motor 204 as shown in FIG. ), the rotary shaft 203 was attached so that the center of the rotating shaft 203 was located at the center of the flat target 206. □ [The problem that the invention tries to solve! ! ] However, in the above-mentioned conventional technology, the flat target 20
There was a problem that the target was hardly sputtered at the center and outer periphery of the target, resulting in poor target usage efficiency.Also, when reactive sputtering was performed, the target was not sputtered at the center and outer periphery. There was a problem in that reactants with the atmospheric gas adhered and caused the generation of particles.

The present invention is intended to solve these problems, and its purpose is to rotate the pair of N and S poles of a permanent magnet parallel to the surface of the target that is not in contact with the plasma, and at the same time The target is sputtered uniformly by translating the pair of north and south poles of the magnet in a direction parallel to the target surface, that is, in a direction perpendicular to the electric field applied to the target.

[Means for Solving the Problems] The present invention has a mechanism for creating an active plasma between an anode and a cathode, the cathode is made of a target material, and an electric field is created in a direction perpendicular to the surface of the cathode. a mechanism, a mechanism that creates a magnetic field in a direction perpendicular to the electric field by providing a permanent magnet on a surface of the cathode that is not in contact with the active plasma, and a mechanism that moves the permanent magnet in a direction perpendicular to the electric field. [Example] The planar magnetron sputtering apparatus of the present invention basically replaces the mechanism for moving a permanent magnet as shown in FIG. 1(a) with the plasma of a flat target as shown in FIG. 1(b). This is a device that is attached to a surface that does not touch the surface.

FIG. 1(a) is a diagram showing the structure of a moving mechanism for a permanent magnet attached to the surface of the flat target 106 that does not come into contact with plasma, where 101 is the S pole of the permanent magnet, 102 is the N pole of the permanent magnet, and 103 is the N pole of the permanent magnet. A rotating shaft, 104 is an electric motor, and 107 is a fixed stand for the electric motor 104, which can be moved along a rail 108. Furthermore, the rail 108 can move along a rail 1'09 orthogonal to the rail 108.

FIG. 1(b) is a diagram showing the positional relationship between the permanent magnet moving mechanism and the flat target 106 as shown in FIG. 1(a).
105 is a water jacket for cooling the flat target 106. Further, 110 is a cooling water inlet, and 111 is a cooling water exhaust pressure port.

FIG. 1(C) is a diagram showing the trajectory of the rotating shaft 103 in the permanent magnet moving mechanism shown in FIG. 1(a), and 112 is the trajectory.

Details will be explained below based on FIG. 1. First, cooling water is supplied to the water jacket 105 from the cooling water inlet 110.
to be introduced. Thereafter, a mixed gas of nitrogen and argon, which is a sputtering atmosphere gas, is introduced into a sputtering chamber (not shown), and the pressure is adjusted to 6 mtorr. Then, the electric motor 104 is rotated to rotate the S pole 101 and the N pole 102 of the permanent magnet via the rotating shaft 103. The rotation speed is approximately 1100
It is rp. Then, the electric motor fixing stand 107 is attached to the rail 108.
Translate parallel along. At the same time, the rail 1°8 is also moved in parallel along the rail 109. As a result, the center point of the pair of S pole 101 and N pole of the permanent magnet moves while drawing a trajectory as shown in FIG. 1(C). As can be seen from FIG. 1(C), the permanent magnet moves over the entire surface of the target. The moving speed at this time is about 5 centimeters per second.

In this state, approximately 6 kW of power is applied to the pure titanium target 106, which is a flat target, to deposit titanium nitride on the substrate to be processed (not shown).

The deposition rate at this time is about 1,000 people per minute.

Here, since the permanent magnets 101 and 102 rotate about the rotating shaft 103 and at the same time move in a direction parallel to the flat target 106, the flat target 106 is sputtered uniformly and the target can be used efficiently. Furthermore, since titanium nitride, which serves as a particle source, does not re-deposit on the flat target 106, a titanium nitride film with a low defect density can be deposited.

When finishing the deposition, the power applied to the pure titanium target 106, which is a flat plate target, is cut off, the introduction of gas into the sputtering chamber (not shown) is stopped, and the permanent magnet 1 is turned off.
All you have to do is stop the parallel movement and rotation of 01 and 102.

Although one embodiment of the present invention has been described above, it goes without saying that various changes and modifications can be made without departing from the scope defined in the claims.

[Effects of the Invention] The planar magnetron sputtering apparatus of the present invention described above can improve the efficiency of target use, and can deposit a high-quality thin film on the object to be processed by suppressing particle generation. have an effect.

[Brief explanation of the drawing]

FIG. 1(a) is an explanatory diagram showing a permanent magnet moving mechanism in the planar magnetron sputtering apparatus of the present invention. FIG. 1(b) is an explanatory diagram showing the installation of a permanent magnet moving mechanism in the planar magnetron sputtering apparatus of the present invention. FIG. 1(C) is an explanatory diagram showing the locus of the permanent magnet in the planar magnetron sputtering apparatus of the present invention. FIG. 2(a) is an explanatory diagram showing a permanent magnet moving mechanism in a conventional planar magnetron sputtering apparatus. FIG. 2(b) is an explanatory diagram showing the installation of a permanent magnet moving mechanism in a conventional planar magnetron sputtering apparatus. 101.201 Permanent magnet south pole 102.202 Permanent magnet north pole 103.203 Rotating shaft 104.204 1i motive 105.205 Water jacket 106.206
Flat target 107 Motor fixing base 108 Rail 109 Rail 110 Cooling water inlet 111 Cooling water inlet 112 More than the trajectory of the permanent magnet Applicant Seiko Epson Co., Ltd. agent Patent attorney Kizobe Suzuki (1 other person) 1'L mouth
(b) See two figures (α) ノ% z r2I tb)

Claims (1)

[Scope of Claims] A mechanism having an anode and a cathode and creating active plasma between them; A mechanism in which the cathode is made of a target material and creating an electric field in a direction perpendicular to the surface of the cathode; Active plasma of the cathode A planar magnetron sputtering apparatus comprising: a mechanism for providing a permanent magnet on a surface not in contact with the electric field and creating a magnetic field in a direction perpendicular to the electric field; and a mechanism for moving the permanent magnet in a direction perpendicular to the electric field.