JPH04187776A - Method for etching polyimide resin - Google Patents

Method for etching polyimide resin

Info

Publication number
JPH04187776A
JPH04187776A JP31441690A JP31441690A JPH04187776A JP H04187776 A JPH04187776 A JP H04187776A JP 31441690 A JP31441690 A JP 31441690A JP 31441690 A JP31441690 A JP 31441690A JP H04187776 A JPH04187776 A JP H04187776A
Authority
JP
Japan
Prior art keywords
polyimide resin
substrate
copper
etching
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31441690A
Other languages
Japanese (ja)
Inventor
Shuichi Ogasawara
修一 小笠原
Tomoyoshi Takahashi
高橋 知良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP31441690A priority Critical patent/JPH04187776A/en
Publication of JPH04187776A publication Critical patent/JPH04187776A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To improve the adhesion of the surface of a copper-polyimide substrate to a resist and to enhance etching accuracy by washing the surface of the substrate with sulfuric acid having a prescribed concn., forming an etching resist layer and carrying out etching. CONSTITUTION:The surface of polyimide resin is electroless-plated or further electroplated and a copper-polyimide substrate is formed. The surface of this substrate is washed with sulfuric acid having 20wt.% or higher concn. to remove impurities sticking to the surface and to improve the adhesion to an etching resist layer formed on the surface. The etching resist layer is then formed on the washed surface and the part of the substrate not covered with the layer is etched.

Description

【発明の詳細な説明】 [産業上の利用分野コ 本発明はポリイミド樹脂の表面に無電解めっき、あるい
は引続き電解めっきを行うことにより銅被膜を形成し、
次いで熱処理を施すことによって得られた銅ポリイミド
基板を用いて回路を形成する方法に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention forms a copper coating on the surface of a polyimide resin by electroless plating or subsequent electrolytic plating,
The present invention then relates to a method of forming a circuit using a copper polyimide substrate obtained by subjecting it to heat treatment.

[従来の技術] ポリイミド樹脂は優れた耐熱性を有し、また機械的、電
気的および化学的特性も他のプラスチック材料に比べて
遜色が無いので、電気機器等の絶縁材料として良く用い
られている。例えば、プリント配線板(PWB) 、フ
レキシブルプリント回路(FPC)、テープ自動ボンデ
ィング(TAB)実装等は、このポリイミド樹脂上に銅
被膜を形成して得られた銅ポリイミド基板を加工して得
られる。
[Prior Art] Polyimide resin has excellent heat resistance and mechanical, electrical, and chemical properties comparable to other plastic materials, so it is often used as an insulating material for electrical equipment. There is. For example, printed wiring boards (PWB), flexible printed circuits (FPC), tape automatic bonding (TAB) mounting, etc. are obtained by processing a copper polyimide substrate obtained by forming a copper coating on this polyimide resin.

従来このようなPWB、FPCSTAB用の素材となる
銅ポリイミド基板は一般的にはポリイミド樹脂と銅箔と
を接着剤で貼り合わせるラミネート法が採られていた。
Conventionally, copper polyimide substrates, which are the materials for such PWBs and FPCSTABs, have generally been manufactured using a lamination method in which polyimide resin and copper foil are bonded together using an adhesive.

しかしながらこのラミネート法によって得られた基板で
は銅被膜のエツチング処理やフォトレジストの剥離処理
に際して基板の銅被膜とポリイミド樹脂の界面に存在す
る接着剤層に塩素イオンや硫酸イオン等の不純物が吸着
され、該基板上に形成された回路間隔が特に狭い場合に
は絶縁不良などの障害を起こす恐れがあった。このよう
な欠点を解消するためポリイミド樹脂表面に接着剤等を
介在させることなく直接的に金属層を形成させ銅ポリイ
ミド基板を得る方法が提案されている。例えば、ポリイ
ミド樹脂表面をエツチングし、活性化した後、触媒を付
与し、次いで無電解めっきをし、要すれば引続き電解め
っきを行うことにより銅ポリイミド基板を得、ポリイミ
ド樹脂と銅の高温での密着性および耐薬品性を改良する
ために該基板に120°C以上の熱処理を施すものであ
る。
However, in the substrate obtained by this lamination method, impurities such as chlorine ions and sulfate ions are adsorbed to the adhesive layer existing at the interface between the copper coating and the polyimide resin during the etching process of the copper coating and the peeling process of the photoresist. If the distance between the circuits formed on the substrate is particularly narrow, problems such as poor insulation may occur. In order to overcome these drawbacks, a method has been proposed in which a metal layer is directly formed on the surface of a polyimide resin without intervening an adhesive or the like to obtain a copper polyimide substrate. For example, a copper polyimide substrate is obtained by etching and activating the polyimide resin surface, applying a catalyst, then electroless plating and, if necessary, continuing electrolytic plating. The substrate is heat treated at 120°C or higher to improve adhesion and chemical resistance.

[発明が解決しようとする課題] 上記方法によって得られる銅ポリイミド基板は、高温環
境下でも銅被膜とポリイミド樹脂間に高い密着力が保た
れるばかりでなく、耐薬品性にも優れることからPWB
SFPC,TAB等の電子部品用の素材として好適であ
る。
[Problems to be Solved by the Invention] The copper polyimide substrate obtained by the above method not only maintains high adhesion between the copper coating and the polyimide resin even in a high temperature environment, but also has excellent chemical resistance, so it is suitable for PWB.
It is suitable as a material for electronic components such as SFPC and TAB.

ところで、上記電子部品の中でも最も高密度化が可能な
TABを製造する一般的な工程にはスプロケットホール
やデバイスホール等の孔を設ける工程がある。この工程
は、銅ポリイミド基板のポリイミド樹脂表面にレジスト
層を形成した後、所望のマスクを用いて露光し、現像し
て溶解しポリイミド樹脂の所望部を露出し、この部分を
エツチングして除去するものである。この方法で前記方
法により得られた銅ポリイミド基板のポリイミド樹脂の
エツチングを行った場合、従来と異なりポリイミド樹脂
のエツチングレジスト層で被覆された部分までエツチン
グされ、所望な形状の孔が得られないという新たな問題
が発生している。
By the way, a general process for manufacturing a TAB, which allows for the highest density among the above-mentioned electronic components, includes a process of forming holes such as sprocket holes and device holes. This process involves forming a resist layer on the polyimide resin surface of a copper polyimide substrate, exposing it to light using a desired mask, developing and dissolving it to expose a desired part of the polyimide resin, and removing this part by etching. It is something. When the polyimide resin of the copper polyimide substrate obtained by the above method is etched using this method, unlike the conventional method, the part covered with the polyimide resin etching resist layer is etched, making it impossible to obtain holes of the desired shape. A new problem has arisen.

本発明の目的は、ポリイミド樹脂に無電解めっきし、要
すれば引続き電解めっきして銅被膜を形成し、次いで熱
処理を施すことによって得られた銅ポリイミド基板のポ
リイミド樹脂部を溶解除去するに際して、所望の部分の
ポリイミド樹脂のみの溶解を可能とするポリイミド樹脂
のエツチング方法の提供にある。
The object of the present invention is to perform electroless plating on a polyimide resin, and if necessary, to form a copper film by electrolytic plating, and then to perform heat treatment to dissolve and remove the polyimide resin portion of the copper polyimide substrate. An object of the present invention is to provide a method for etching a polyimide resin, which makes it possible to dissolve only a desired portion of the polyimide resin.

[課題を解決するための手段] 本発明者らは上記問題点を解決すべく種々検討した結果
、ポリイミド樹脂表面とエツチングレジストとの密着性
が充分でないため、ポリイミド樹脂の溶解液がポリイミ
ド樹脂とエツチングレジストの界面に浸入し、該界面か
らポリイミド樹脂の溶解が進行し、結果的にエツチング
レジスト層で被覆され本来溶解されるべきでない部分の
ポリイミド樹脂の一部も溶解されてしまうことなどを見
いだし本発明に至った。
[Means for Solving the Problems] As a result of various studies in order to solve the above problems, the present inventors found that because the adhesion between the polyimide resin surface and the etching resist was insufficient, the solution of the polyimide resin did not interact with the polyimide resin. It was discovered that the polyimide resin penetrates into the interface of the etching resist, and the polyimide resin begins to dissolve from the interface, and as a result, part of the polyimide resin that is covered with the etching resist layer and should not be dissolved is also dissolved. This led to the present invention.

即ち、上記課題を解決するための本発明の方法は、ポリ
イミド樹脂に無電解めっきし、要すれば引続き電解めっ
きして銅被膜を形成し、次いで熱処理を施すことによっ
て得られた銅ポリイミド基板のポリイミド樹脂部を溶解
除去する方法において、該ポリイミド樹脂の表面を濃度
20重量%以上の硫酸によって洗浄した後に、エツチン
グレジスト層を形成し、該エツチングレジスト層に被覆
されていない部分のポリイミド樹脂をエツチングして除
去するものである。
That is, the method of the present invention for solving the above problems is based on a copper polyimide substrate obtained by electroless plating on a polyimide resin, followed by electrolytic plating if necessary to form a copper coating, and then heat treatment. In the method of dissolving and removing the polyimide resin portion, after cleaning the surface of the polyimide resin with sulfuric acid having a concentration of 20% by weight or more, an etching resist layer is formed, and the portions of the polyimide resin not covered by the etching resist layer are etched. and remove it.

[作用] ポリイミド樹脂に無電解めっきし、要すれば引続き電解
めっきして銅被膜を形成し、次いで熱処理を施して得ら
れた銅ポリイミド基板のポリイミド樹脂の表面とエツチ
ングレジストとの間に充分な密着性が得られない原因は
、該基板に熱処理を施した際にポリイミド樹脂表面に不
純物が付着し、この不純物が通常の洗浄法では完全に除
去できずポリイミド樹脂表面に残留するためと考えられ
る。
[Function] Electroless plating is performed on the polyimide resin, followed by electrolytic plating if necessary to form a copper film, and then heat treatment is performed to form a copper film. The reason for the lack of adhesion is thought to be that impurities adhere to the polyimide resin surface when the substrate is heat-treated, and these impurities cannot be completely removed by normal cleaning methods and remain on the polyimide resin surface. .

該不純物の発生機構については充分な知見が得られてい
ないが、該基板を熱処理した際にポリイミド樹脂内部か
ら発生した物質がポリイミド樹脂表面に強固に付着した
ものと考えられる。
Although sufficient knowledge has not been obtained regarding the mechanism by which the impurities are generated, it is thought that substances generated from within the polyimide resin when the substrate was heat-treated adhered firmly to the surface of the polyimide resin.

本発明は該基板にエツチングレジストを塗布する前にポ
リイミド樹脂表面を硫酸で洗浄し、ポリイミド樹脂表面
とエツチングレジストの密着性を改良するものだが、こ
れはポリイミド樹脂表面の洗浄方法について種々検討し
た結果得られた知見であり、該不純物の除去に最も効果
のある洗浄法であると考えられる。
The present invention improves the adhesion between the polyimide resin surface and the etching resist by cleaning the polyimide resin surface with sulfuric acid before applying the etching resist to the substrate, but this is the result of various studies on cleaning methods for the polyimide resin surface. This is the knowledge obtained and is considered to be the most effective cleaning method for removing the impurities.

本発明においては濃度20重量%以上の硫酸を用いる。In the present invention, sulfuric acid with a concentration of 20% by weight or more is used.

硫酸濃度が20重量%以下である場合は、洗浄に際して
加温しても得られた基板のボリイミド樹脂表面とレジス
トとの間に十分な密着性が得られず、ポリイミド樹脂の
溶解除去の際に工、ツチングレジストに被覆されたポリ
イミド樹脂部も部分的に溶解される。
If the sulfuric acid concentration is 20% by weight or less, sufficient adhesion between the polyimide resin surface of the resulting substrate and the resist will not be obtained even if heated during cleaning, and the polyimide resin will not be dissolved or removed when the polyimide resin is removed. During the process, the polyimide resin part covered with the stitching resist is also partially dissolved.

本発明における洗浄時間や用いる硫酸の温度は硫酸濃度
や基板の熱処理条件等によって異なり一概に決定できな
い。よって、処理に際してはあらかじめ予備実験等で洗
浄不足の発生しないように適切な条件を求めておく必要
がある。
The cleaning time and the temperature of the sulfuric acid used in the present invention vary depending on the sulfuric acid concentration, the heat treatment conditions of the substrate, etc., and cannot be determined unconditionally. Therefore, during the treatment, it is necessary to determine appropriate conditions in advance through preliminary experiments to avoid insufficient cleaning.

また、ポリイミド樹脂のエツチングレジストは特殊なも
のを用いる必要はなく、ポリイミド樹脂の溶解液に耐性
のあるものであれば良く、またその形成条件は常法で充
分本発明による効果が得られる。
Further, it is not necessary to use a special etching resist for polyimide resin, as long as it is resistant to the solution of polyimide resin, and the effects of the present invention can be sufficiently obtained under the conditions for forming the resist using conventional methods.

[実施例1] 鐘淵化学工業社製NPI−50型ポリイミドフィルム上
に無電解銅めっき法により厚さ 1,5μmの銅めっき
被膜を形成した後、該基板を真空加熱炉に静置して真空
度10 ”−’ torrにおいて昇温速度10°C/
min、で昇温し、400℃で1時間の熱処理を施した
後、室温まで冷却した。得られた基板を50重量%の硫
酸を含む水溶液に25℃で2分間浸漬し、充分水洗した
後乾燥した。その後該基板の銅めっき被膜上に東京応化
工業社製フォトレジスト PMERHC−600を厚さ
40μmに均一に塗布し、70°Cで30分間乾燥した
。その後該基板のポリイミド樹脂表面に富士薬品工業社
製フォトレジス) FSR−Sと希釈液FSR−Tの等
体積比の混合液を厚さ10μmに均一に塗布し70℃で
30分乾燥した。得られた基板のPMER側にインナー
リード部においてリード幅70μm、リード間隔60μ
mのリードが形成されるようにマスキングを施し、一方
FSR側にはデバイスホールおよびスプロケットホール
が形成されるようにマスキングを施し、それぞれのフォ
トレジスト層に10100O/cm”および100 m
J/cm″の紫外線を照射した後現像を行った。その後
露出した銅の無電解めっき被膜上に厚さ35μmの銅を
電気めっきしてPMERの剥離を行った後無電解銅めっ
き被膜を電気銅めっき被膜をマスクとして溶解除去を行
った。
[Example 1] After forming a copper plating film with a thickness of 1.5 μm on an NPI-50 type polyimide film manufactured by Kanekabuchi Chemical Industry Co., Ltd. by electroless copper plating method, the substrate was placed in a vacuum heating furnace. Temperature increase rate 10°C/at vacuum level 10”-’ torr
After heating at 400°C for 1 hour, the mixture was cooled to room temperature. The obtained substrate was immersed in an aqueous solution containing 50% by weight of sulfuric acid at 25° C. for 2 minutes, thoroughly washed with water, and then dried. Thereafter, a photoresist PMERHC-600 manufactured by Tokyo Ohka Kogyo Co., Ltd. was uniformly applied to a thickness of 40 μm on the copper plating film of the substrate, and dried at 70° C. for 30 minutes. Thereafter, a mixture of photoresist FSR-S manufactured by Fuji Pharmaceutical Co., Ltd. and diluent FSR-T in an equal volume ratio was uniformly applied to a thickness of 10 μm on the polyimide resin surface of the substrate and dried at 70° C. for 30 minutes. The lead width is 70 μm and the lead spacing is 60 μm at the inner lead part on the PMER side of the obtained substrate.
Masking was applied to form leads of 10100 O/cm" and 100 m" for each photoresist layer, while masking was applied to form device holes and sprocket holes on the FSR side.
After irradiation with ultraviolet rays of J/cm", development was performed. After that, copper was electroplated to a thickness of 35 μm on the exposed electroless copper plating film, and the PMER was peeled off. After that, the electroless copper plating film was electroplated. Dissolution and removal was performed using the copper plating film as a mask.

その後電気銅めっき被膜および露出したポリイミド樹脂
表面に富士薬品工業社製フォトレジストFSR−Sを厚
さ 15μmに均一に塗布し130℃で30分間乾燥し
た。
Thereafter, a photoresist FSR-S manufactured by Fuji Pharmaceutical Co., Ltd. was uniformly applied to a thickness of 15 μm on the electrolytic copper plating film and the exposed polyimide resin surface, and dried at 130° C. for 30 minutes.

上記処理によって得られた基板を抱水ヒドラジンに50
°Cで5分間浸漬してポリイミド樹脂の溶解除去を行っ
た。さらに該基板よりFSRを剥離することによってイ
ンナーリード部においてリード幅 70 μm1 リー
ド間隔 60 μmのリードを持つTABテープを得た
The substrate obtained by the above treatment was added to hydrazine hydrate for 50 min.
The polyimide resin was dissolved and removed by immersion at °C for 5 minutes. Furthermore, by peeling off the FSR from the substrate, a TAB tape having leads with a lead width of 70 μm and a lead spacing of 60 μm at the inner lead portion was obtained.

得られたTABテープにおけるポリイミド樹脂開孔形状
は良好であり、電気的、機械的、耐熱性、に優れている
TABテープを精度良く、かつ安定して製造することが
できた。
The polyimide resin opening shape in the obtained TAB tape was good, and a TAB tape having excellent electrical, mechanical, and heat resistance properties could be manufactured accurately and stably.

[実施例2] 基板の洗浄を20重量%の硫酸を含有する溶液を用い5
0°Cで2分行った以外は実施例1と同様な手順でTA
Bテープを製造した。
[Example 2] The substrate was cleaned using a solution containing 20% by weight of sulfuric acid.
TA was carried out in the same manner as in Example 1 except that it was carried out at 0°C for 2 minutes.
B tape was manufactured.

得られたTABテープにおけるポリイミド樹脂開孔形状
は良好であり、電気的、機械的、耐熱性、に優れている
TABテープを精度良く、かつ安定して製造することが
できた。
The polyimide resin opening shape in the obtained TAB tape was good, and a TAB tape having excellent electrical, mechanical, and heat resistance properties could be manufactured accurately and stably.

[比較例1] 実施例1の工程において、硫酸による基板の洗浄は行わ
ず、その他の工程は実施例1と同様な手順でTABテー
プを製造した。
[Comparative Example 1] A TAB tape was manufactured in the same manner as in Example 1 except that the substrate was not cleaned with sulfuric acid in the process of Example 1.

得られたTABテープにおけるポリイミド樹脂開孔形状
は、デバイスホール部およびスプロケットホール部にお
いて100μm程度のオーバーエツチングが観察され、
このTABテープを電子部品として用いた場合信頼性に
欠けるものとならざるを得ない。
Regarding the shape of the polyimide resin openings in the obtained TAB tape, over-etching of about 100 μm was observed in the device hole portion and sprocket hole portion.
When this TAB tape is used as an electronic component, it inevitably becomes unreliable.

[比較例2] 基板の洗浄を10重■%の硫酸を含有する溶液を用い5
0°Cで10分行った以外は実施例1と同様な手順でT
ABテープを製造した。
[Comparative Example 2] The substrate was cleaned using a solution containing 10% by weight of sulfuric acid.
T was carried out in the same manner as in Example 1 except that it was carried out at 0°C for 10 minutes.
AB tape was manufactured.

得られたTABテープにおけるポリイミド樹脂開孔形状
は、デバイスホール部およびスプロケットホール部にお
いて70μm程度のオーバーエツチングが観察され、こ
のTABテープを電子部品として用いた場合信頼性に欠
けるものとならざるを得ない。
Regarding the shape of the polyimide resin openings in the obtained TAB tape, over-etching of approximately 70 μm was observed in the device hole portion and sprocket hole portion, and if this TAB tape was used as an electronic component, it would be unreliable. do not have.

[発明の効果] 本発明の方法によれば、ポリイミド樹脂表面どエツチン
グレジストの密着性が改良され、この結果、ポリイミド
樹脂のエツチング精度が向上し、電気的、機械的、熱的
に優れているTABテープを精度良く、かつ安定して製
造することができる。
[Effects of the Invention] According to the method of the present invention, the adhesion of the etching resist to the surface of the polyimide resin is improved, and as a result, the etching precision of the polyimide resin is improved, and it is excellent electrically, mechanically, and thermally. TAB tape can be manufactured accurately and stably.

・特許出願人 住友金属鉱山株式会社・Patent applicant: Sumitomo Metal Mining Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims]  ポリイミド樹脂に無電解めっきし、要すれば引続き電
解めっきして銅被膜を形成し、次いで熱処理を施すこと
によって得られた銅ポリイミド基板のポリイミド樹脂部
を溶解除去する方法において、該ポリイミド樹脂の表面
を濃度20重量%以上の硫酸によって洗浄した後に、エ
ッチングレジスト層を形成し、該エッチングレジスト層
に被覆されていない部分のポリイミド樹脂をエッチング
することを特徴とするポリイミド樹脂のエッチング方法
In a method for dissolving and removing a polyimide resin portion of a copper polyimide substrate obtained by electroless plating on a polyimide resin, followed by electrolytic plating if necessary to form a copper coating, and then heat treatment, the surface of the polyimide resin is A method for etching a polyimide resin, which comprises washing the polyimide resin with sulfuric acid having a concentration of 20% by weight or more, forming an etching resist layer, and etching the portion of the polyimide resin not covered by the etching resist layer.
JP31441690A 1990-11-21 1990-11-21 Method for etching polyimide resin Pending JPH04187776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31441690A JPH04187776A (en) 1990-11-21 1990-11-21 Method for etching polyimide resin

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31441690A JPH04187776A (en) 1990-11-21 1990-11-21 Method for etching polyimide resin

Publications (1)

Publication Number Publication Date
JPH04187776A true JPH04187776A (en) 1992-07-06

Family

ID=18053085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31441690A Pending JPH04187776A (en) 1990-11-21 1990-11-21 Method for etching polyimide resin

Country Status (1)

Country Link
JP (1) JPH04187776A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031625A (en) * 2001-07-11 2003-01-31 Sumitomo Metal Mining Co Ltd Method of processing polyimide resin

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031625A (en) * 2001-07-11 2003-01-31 Sumitomo Metal Mining Co Ltd Method of processing polyimide resin

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