JPH0418746A - Substrate for ic mounting - Google Patents
Substrate for ic mountingInfo
- Publication number
- JPH0418746A JPH0418746A JP12175490A JP12175490A JPH0418746A JP H0418746 A JPH0418746 A JP H0418746A JP 12175490 A JP12175490 A JP 12175490A JP 12175490 A JP12175490 A JP 12175490A JP H0418746 A JPH0418746 A JP H0418746A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- substrate
- layer
- silicon carbide
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 15
- 238000005219 brazing Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018459 Al—Ge Inorganic materials 0.000 description 1
- 101100128225 Bacillus subtilis (strain 168) licT gene Proteins 0.000 description 1
- 102220497186 WD repeat domain phosphoinositide-interacting protein 4_N15A_mutation Human genes 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は例えば大出力IC実装用基板、特にその放熱性
を改良し、軽量化を図ったIC実装用基板に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to, for example, a high-output IC mounting board, and particularly to an IC mounting board with improved heat dissipation and reduced weight.
〈従来の技術〉
従来のこの種のIC実装用基板としては、例えはアルミ
ナ基板の表裏面にCu導体薄板を被着したものがあった
。これは、Cui板のアルミナ基板への積層後、所定温
度に加熱することにより、〈発明が解決しようとする課
題〉
しかしながら、このような従来のCu導体を用いたIC
実装用基板にあっては、回路形成用またはベース板用の
薄板材としてCu導体を用いているため、その基板全体
として重量が大きく、また、このCu導体とアルミナ基
板等との熱膨張率の差異が大きいため、熱ザイクル試験
においては該アルミナ基板にひび割れが発生し易いとい
う課題が生していた。<Prior Art> Conventional IC mounting substrates of this type include, for example, an alumina substrate with Cu conductor thin plates adhered to the front and back surfaces. This problem can be solved by heating the Cu plate to a predetermined temperature after laminating the Cu plate onto the alumina substrate.
In mounting boards, Cu conductors are used as thin plate materials for circuit formation or base plates, so the weight of the board as a whole is large, and the coefficient of thermal expansion between the Cu conductors and the alumina board, etc. Because of the large difference, there was a problem in that the alumina substrate was prone to cracking in the thermal cycle test.
そこで、本発明は、軽量化を図るとともに耐熱サイクル
特性に優れたIC実装用基板を提供することを、その目
的としている。Therefore, an object of the present invention is to provide an IC mounting substrate that is lightweight and has excellent heat cycle resistance characteristics.
〈課題を解決するための手段〉
本発明は、炭化珪素層と、この炭化珪素層の両面にろう
材層を介して被着されたアルミニウム層と、を有するI
C実装用基板である。<Means for Solving the Problems> The present invention provides an I.
This is a board for C mounting.
〈作用〉
本発明に係るIC実装用基板にあっては、Cu薄板の替
わりにアルミニウム薄板を使用しているため、基板全体
としての軽量化を図ることができた。また、高熱伝導率
の炭化珪素基板を使用しており、かつこれにアルミニウ
ム薄板をろう材により被着しているため、加熱等に起因
する応力を緩和することができ、熱サイクル試験に対し
ても耐性が大きく基板の寿命が長くなっている。<Function> Since the IC mounting board according to the present invention uses a thin aluminum plate instead of a thin Cu plate, the weight of the entire board can be reduced. In addition, since a silicon carbide substrate with high thermal conductivity is used and a thin aluminum plate is attached to this using a brazing material, stress caused by heating etc. can be alleviated, making it resistant to thermal cycle tests. It also has greater durability and a longer lifespan for the board.
〈実施例〉 以下、本発明の実施例を図面を参照して説明する。<Example> Embodiments of the present invention will be described below with reference to the drawings.
第1図は本発明の一実施例に係るIC実装用基板を示す
ための断面図である。FIG. 1 is a sectional view showing an IC mounting board according to an embodiment of the present invention.
この図において、11は絶縁体である炭化珪素層(S
i C基板、例えは炭化珪素基焼結体板)であって、こ
の炭化珪素[11の両面にはろう材層12A、12Bを
介して回路形成用のアルミニウム層(またはアルミニウ
ム合金N)13A、13Bがそれぞれ被着されている。In this figure, 11 is a silicon carbide layer (S
iC substrate (for example, a silicon carbide-based sintered body plate), and an aluminum layer (or aluminum alloy N) 13A for forming a circuit on both sides of the silicon carbide [11] via brazing material layers 12A, 12B, 13B are respectively deposited.
このろう材としてはAl−5i系、Al−Ge系、Al
−Cu系等のろう材が使用される。This brazing filler metal is Al-5i type, Al-Ge type, Al
-Cu-based brazing material is used.
更に、これらのアルミニウムji13A、13Bの各表
面にはNiメツキN(またはCuメツキ層)14A、1
4Bが被着されている。Furthermore, Ni plating N (or Cu plating layer) 14A, 1 is applied to each surface of these aluminum ji13A, 13B.
4B is coated.
以上の構成に係る薄板基板にあっては、炭化珪素層11
はAl−5i系のろう祠12A、12Bとの接合強度が
強く、またアルミナよりも高い熱伝導率を有している(
SiCの熱伝導率は35〜270W/mKであるのに対
して、Al2O3のそれは15〜20W/rnKである
)。したがりて、炭化珪素を絶縁板材として用いること
によって高放熱性および高接合力が得られることとなる
。In the thin substrate according to the above configuration, silicon carbide layer 11
has strong bonding strength with the Al-5i-based brazing pads 12A and 12B, and also has higher thermal conductivity than alumina (
The thermal conductivity of SiC is 35-270 W/mK, whereas that of Al2O3 is 15-20 W/rnK). Therefore, by using silicon carbide as the insulating plate material, high heat dissipation and high bonding strength can be obtained.
また、アルミニウムJ!13A、13Bは回路形成用ま
たはベース板用として用いられるものであり、更にこの
基板全体としての軽量化に資するものである。例えばこ
のアルミニウム層13A、13Bは0.2〜0.4.m
m程度であり、アルミニウム密度が2.7〜2.8g/
cm3程度であるのに対し、従来のCu導体密度は8.
9〜9.0g/cm”程度である。Also, Aluminum J! 13A and 13B are used for forming a circuit or for a base plate, and further contribute to reducing the weight of this board as a whole. For example, the aluminum layers 13A and 13B have a thickness of 0.2 to 0.4. m
m, and the aluminum density is 2.7 to 2.8 g/
The conventional Cu conductor density is about 8.cm3.
It is about 9 to 9.0 g/cm".
そして、上記ろう材112A、12Bは熱サイクル試験
に対してもそのろう材自体が塑性変形可能であってアル
ミニウムN15A、13Bと炭化珪素層11との間の熱
膨張率の差に基づく相対的な伸縮を吸収、緩和するもの
である。この点からしても耐熱サイクル特性は向上して
いるものである。The brazing filler metals 112A and 12B can be plastically deformed even during a thermal cycle test, and the relative difference between the aluminum N15A and N13B and the silicon carbide layer 11 is based on the difference in thermal expansion coefficient. It absorbs and alleviates expansion and contraction. From this point of view as well, the heat cycle resistance characteristics are improved.
〈効果〉
以」二説明してきたように、本発明によれば、基板全体
として軽量化を達成することができる。また、炭化珪素
層についてひび割れ等が生じることがなく、基板全体と
しての耐熱サイクル特性が高められる。また、アルミニ
ウム層と炭化珪素層等との接合強度も高められる。<Effects> As described above, according to the present invention, it is possible to reduce the weight of the entire board. Moreover, cracks and the like do not occur in the silicon carbide layer, and the heat cycle resistance characteristics of the entire substrate are improved. Further, the bonding strength between the aluminum layer and the silicon carbide layer is also increased.
第1図は本発明の一実施例に係るIC実装用基板の概略
構造を示す断面図である。
1ト・
12A。
13A。
14A。
2B
3B
4BFIG. 1 is a sectional view showing a schematic structure of an IC mounting board according to an embodiment of the present invention. 1t. 12A. 13A. 14A. 2B 3B 4B
Claims (1)
して被着されたアルミニウム層と、を有することを特徴
とするIC実装用基板。1. A substrate for IC mounting, comprising a silicon carbide layer and an aluminum layer deposited on both sides of the silicon carbide layer via a brazing material layer.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12175490A JP2689687B2 (en) | 1990-05-11 | 1990-05-11 | IC mounting substrate |
DE69127927T DE69127927T2 (en) | 1990-05-02 | 1991-04-30 | Ceramic substrate used for an electrical or electronic circuit |
EP91107032A EP0455229B1 (en) | 1990-05-02 | 1991-04-30 | Ceramic substrate used for an electric or electronic circuit |
KR1019910007202A KR0173783B1 (en) | 1990-05-02 | 1991-05-02 | Ceramic board for molding of electric or electronic circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12175490A JP2689687B2 (en) | 1990-05-11 | 1990-05-11 | IC mounting substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0418746A true JPH0418746A (en) | 1992-01-22 |
JP2689687B2 JP2689687B2 (en) | 1997-12-10 |
Family
ID=14819062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12175490A Expired - Lifetime JP2689687B2 (en) | 1990-05-02 | 1990-05-11 | IC mounting substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2689687B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5965193A (en) * | 1994-04-11 | 1999-10-12 | Dowa Mining Co., Ltd. | Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material |
EP1243569A2 (en) | 1994-04-11 | 2002-09-25 | Dowa Mining Co., Ltd. | Electrical circuit having a metal-bonded-ceramic material or MBC component as an insulating substrate |
CN103570221A (en) * | 2013-11-08 | 2014-02-12 | 蚌埠玻璃工业设计研究院 | Molten tin bath with filter device |
-
1990
- 1990-05-11 JP JP12175490A patent/JP2689687B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5965193A (en) * | 1994-04-11 | 1999-10-12 | Dowa Mining Co., Ltd. | Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material |
US6183875B1 (en) | 1994-04-11 | 2001-02-06 | Dowa Mining Co., Ltd. | Electronic circuit substrates fabricated from an aluminum ceramic composite material |
EP1243569A2 (en) | 1994-04-11 | 2002-09-25 | Dowa Mining Co., Ltd. | Electrical circuit having a metal-bonded-ceramic material or MBC component as an insulating substrate |
CN103570221A (en) * | 2013-11-08 | 2014-02-12 | 蚌埠玻璃工业设计研究院 | Molten tin bath with filter device |
Also Published As
Publication number | Publication date |
---|---|
JP2689687B2 (en) | 1997-12-10 |
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