JPH0418723A - Growing process of semiconductor crystal - Google Patents
Growing process of semiconductor crystalInfo
- Publication number
- JPH0418723A JPH0418723A JP12246690A JP12246690A JPH0418723A JP H0418723 A JPH0418723 A JP H0418723A JP 12246690 A JP12246690 A JP 12246690A JP 12246690 A JP12246690 A JP 12246690A JP H0418723 A JPH0418723 A JP H0418723A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- group
- compound
- crystal
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 150000001875 compounds Chemical class 0.000 claims abstract description 48
- 239000000470 constituent Substances 0.000 claims description 13
- 229910021476 group 6 element Inorganic materials 0.000 claims 5
- 229910052725 zinc Inorganic materials 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 13
- 229910052717 sulfur Inorganic materials 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 229910052711 selenium Inorganic materials 0.000 abstract description 5
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 229910052979 sodium sulfide Inorganic materials 0.000 abstract description 2
- VDQVEACBQKUUSU-UHFFFAOYSA-M disodium;sulfanide Chemical compound [Na+].[Na+].[SH-] VDQVEACBQKUUSU-UHFFFAOYSA-M 0.000 abstract 1
- 239000002994 raw material Substances 0.000 description 24
- 239000011701 zinc Substances 0.000 description 17
- -1 zinc chalcogenide Chemical class 0.000 description 10
- 239000004020 conductor Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- OPFJDXRVMFKJJO-ZHHKINOHSA-N N-{[3-(2-benzamido-4-methyl-1,3-thiazol-5-yl)-pyrazol-5-yl]carbonyl}-G-dR-G-dD-dD-dD-NH2 Chemical compound S1C(C=2NN=C(C=2)C(=O)NCC(=O)N[C@H](CCCN=C(N)N)C(=O)NCC(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(N)=O)=C(C)N=C1NC(=O)C1=CC=CC=C1 OPFJDXRVMFKJJO-ZHHKINOHSA-N 0.000 description 1
- 241000277269 Oncorhynchus masou Species 0.000 description 1
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229940126086 compound 21 Drugs 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体結晶の成長方法に関し、特に■−■族
化合物゛４６導体結晶が形成された基板表面−ト、への
■族元素を構成元素とした化合物半導体の結晶成長方法
に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for growing semiconductor crystals, and in particular, to a method for growing a semiconductor crystal, and in particular, to a substrate surface on which a 46 conductor crystal is formed. This invention relates to a method for growing crystals of compound semiconductors as elements.
青緑色発光デバイス材料や非線形光学材料として有望な
ものに、亜鉛カルコゲナイド等の■族元素を構成元素と
した化合物半導体がある。第２図は例えばＪａｐａｎｅ
ｓｅ Ｊｏｕｒｎａｌ ｏｒＡｐｐｌｉｅｄ Ｐｈｙｓ
ｉｃｓＶｏ１２８ ＮＯｌ、２ Ｐ、Ｉ、２１３７−１
．２１４０（１，９８９）に開示された、従来の亜鉛カ
ルコゲナイドの結晶成長方法を示す説明図である。同図
において、２は基板ホルダ１上に装着された基板であり
、３．４及び５はそれぞれＳｅ原料用セル、Ｓ原料用セ
ル及びＺｎ原料用セルである。また、６は光照射用の光
導入ポートである。Compound semiconductors containing group Ⅰ elements such as zinc chalcogenide are promising materials for blue-green light-emitting devices and nonlinear optical materials. Figure 2 shows, for example, Japanese
se Journal or Applied Phys.
icsVo128 NOl, 2 P, I, 2137-1
．． 2140 (1,989), which is an explanatory diagram showing a conventional method for growing crystals of zinc chalcogenide. In the figure, 2 is a substrate mounted on the substrate holder 1, and 3.4 and 5 are a cell for Se raw material, a cell for S raw material, and a cell for Zn raw material, respectively. Further, 6 is a light introduction port for light irradiation.
このような構成において、まず、基板２を成長系の基板
ホルダ１に装着し、該成長系を１Ｏ−８Ｔｏｒｒ程度の
真空度まで排気した後、基板ホルダ１を昇温し基板２を
５００℃程度に一定時間保持して基板２の表面を清浄化
する。In such a configuration, first, the substrate 2 is mounted on the substrate holder 1 of the growth system, and after the growth system is evacuated to a degree of vacuum of about 10-8 Torr, the temperature of the substrate holder 1 is raised and the substrate 2 is heated to about 500°C. The surface of the substrate 2 is cleaned by holding it for a certain period of time.
その後、基板２の温度が３００℃程度になると、Ｓｅ原
料用セル３、Ｓ原料用セル４及びＺｎ原料用セル５から
それぞれＳｅ、Ｓ及びＺｎを基板２の表面に供給するこ
とにより、基板２の表面上に亜鉛カルコゲナイドの結晶
成長を行う。この際、。Thereafter, when the temperature of the substrate 2 reaches approximately 300°C, Se, S, and Zn are supplied to the surface of the substrate 2 from the Se raw material cell 3, the S raw material cell 4, and the Zn raw material cell 5, respectively. crystal growth of zinc chalcogenide on the surface of On this occasion,.
光導入ボーｈ ６から光を基板２表面に照射して結晶成
長の促進を図る場合もある。In some cases, the surface of the substrate 2 is irradiated with light from the light introduction beam h6 to promote crystal growth.
なお、各セル３〜５からの原料の供給の開始、停止、再
開及び終了は、基板２と各セル３〜５との間に設けられ
た図示しないシャッターの開閉あるいはそれぞれのセル
３〜５の上流側に設けられた図示しないバルブの開閉に
よって行なわれる。Note that the supply of raw materials from each cell 3 to 5 is started, stopped, restarted, and terminated by opening and closing a shutter (not shown) provided between the substrate 2 and each cell 3 to 5, or by opening and closing a shutter (not shown) provided between the substrate 2 and each cell 3 to 5, or by opening and closing a shutter (not shown) provided between the substrate 2 and each cell 3 to 5. This is done by opening and closing a valve (not shown) provided on the upstream side.
」１記原料の供給は同時に行っても、交互に行ってもよ
い。” The raw materials mentioned in 1. may be supplied simultaneously or alternately.
従来、亜鉛カルコゲナイド智の■族元素を構成元素とし
た化合物半導体の結晶成長方法は以上のように行われて
おり、単に基板２表面の洗浄処理の後、原料を供給して
結晶成長を行うものであるため、例えば■族元素を含ま
ない■−■族化合物２１′導体結晶の表面を有する基板
のように、基板２の表面が必ずしも成長させようとする
■族元素を構成要素とする化合物半導体結晶に適したも
のとなっていない場合が多い。Conventionally, the method for growing crystals of compound semiconductors containing Group I elements of zinc chalcogenide as a constituent element has been carried out as described above, in which crystal growth is simply carried out by supplying raw materials after cleaning the surface of the substrate 2. Therefore, for example, in the case of a substrate having a surface of a ■-■ group compound 21' conductor crystal that does not contain a group ■ element, the surface of the substrate 2 does not necessarily contain a compound semiconductor whose constituent elements are a group ■ element to be grown. In many cases, it is not suitable for crystallization.
この場合、成長させる■族元素を構成要素とする化合物
半導体結晶中に、基板２表面の結晶構成原子が拡散した
り、基板２表面の結晶欠陥か伝播したりして、生成され
る結晶の品質を劣化させてしまうという問題点があった
。In this case, the crystal constituent atoms on the surface of the substrate 2 may diffuse into the growing compound semiconductor crystal whose constituent elements are group Ⅰ elements, or the crystal defects on the surface of the substrate 2 may propagate, resulting in the quality of the resulting crystal. There was a problem that it caused deterioration.
この発明は上記のような問題点を解決するためになされ
たもので、■族元素を構成元素とした化合物半導体の結
晶を品質良く得ることができる半導体結晶の成長方法を
提供することを目的とする。This invention was made in order to solve the above-mentioned problems, and its purpose is to provide a method for growing semiconductor crystals that can obtain crystals of compound semiconductors containing group Ⅰ elements as constituent elements with good quality. do.
この発明にかかる半導体結晶の成長方法は、■Ｖ族化合
物゛１″−導体結晶の表面を白゛する基板を準備するス
テップと、■族元素または■族元素を含んだ化合物によ
り前記基板表面に対１〜前処理を施し、前記基板表面上
にＩＩＴ−Ｖｌ族化合物を含んた■族元素処理層を形成
するステップと、前記■族元素処理層」二に■族元素を
構成元素と（〜だ化合物゛Ｉ′−導体の結晶成長を行う
ステップとを備えている。The method for growing a semiconductor crystal according to the present invention includes the steps of: (1) preparing a substrate for whitening the surface of a group V compound "1"--conductor crystal; A step of performing a pre-treatment to form a group Ⅰ element treated layer containing an IIT-Vl group compound on the surface of the substrate; and a step of growing crystals of the compound "I'-conductor."
この発明においては、■族元素を含んだ■族元素処理層
上に■族元素を構成元素とした化合物゛Ｉ′。In this invention, a compound ``I'' having a group Ⅰ element as a constituent element is placed on a group Ⅰ element treated layer containing a group Ⅰ element.
導体の結晶成長を行っているため、成長される化合物半
導体結晶中への基板表面の結晶構成原子の拡散や結晶欠
陥の伝播か■族元素処理層により阻１１′、される。Since conductor crystal growth is being carried out, the diffusion of crystal constituent atoms on the surface of the substrate and the propagation of crystal defects into the compound semiconductor crystal to be grown are inhibited by the group II element treated layer.
第１Ａ図〜第１Ｃ図はこの発明の一実施例である亜鉛カ
ルコゲナイドの結晶成長方法を示す説明図である。第１
Ａ図において、２′は基板ホルダ１上に装着されたＧａ
Ａｓ基板等の■−ｖ族化合物゛１６導体結晶基板であ
り、３．４及び５はそれぞれＳｅ原料用セル、Ｓ原料用
セル及びＺｎ原料用セルである。また、６は光照射用の
光導入ボートである。FIGS. 1A to 1C are explanatory diagrams showing a method for growing zinc chalcogenide crystals according to an embodiment of the present invention. 1st
In figure A, 2' is the Ga mounted on the substrate holder 1.
A 16 conductor crystal substrate of a group 1-V compound such as an As substrate, and 3.4 and 5 are a cell for Se raw material, a cell for S raw material, and a cell for Zn raw material, respectively. Further, 6 is a light introduction boat for light irradiation.
このような構成において、基板２′を成長系の基板ホル
ダ１に装着する前に、以下に述べる■族元素による前処
理を施す。In such a configuration, before the substrate 2' is mounted on the substrate holder 1 of the growth system, a pretreatment with a group Ⅰ element described below is performed.
まず、Ｎ Ｓ（硫化ナトリウム）、（ＮＨ４）２Ｓ（
硫化アンモニウム）、（ＮＨ４） ２３Ｘ（多硫化アン
モニウム）等の■族元素（Ｓｅ、ＳＴｅ等）を含んだ化
合物の溶液（水溶液または有機溶剤を溶媒とする溶液）
中に、例えば２０°Ｃ以下の常温で、数分から数時間か
けて基板２′を浸すことにより、第１Ａ図に示すように
、■−■族化合物を含んだ■族元素処理層］１を基板２
′表面上に形成する。First, NS (sodium sulfide), (NH4)2S (
Solutions (aqueous solutions or solutions using organic solvents) of compounds containing group Ⅰ elements (Se, STe, etc.) such as ammonium sulfide), (NH4) 23X (ammonium polysulfide), etc.
By immersing the substrate 2' in the solution for several minutes to several hours at a room temperature of 20° C. or lower, for example, the group 2 element-treated layer 1 containing the group 1-2 compound is formed as shown in FIG. 1A. Board 2
'Form on the surface.
また、」１記した処理の代わりに、基板２′を成長系の
基板ホルダ１に装着した後に、Ｓｅ原料用セル３あるい
はＳ原料用セル４から基板２′表面にＳｅあるいはＳ分
子線を照射し、さらにこの照射中あるいはその前後に、
基板２′及び■族元素の種類に応じて適当に基板２′を
熱処理することにより■族元素処理層］１を形成しても
良い。上記熱処理は、例えば、■族元素分子線照射後、
真空中において３６０℃で１０分間の熱処理を行うもの
であってもよい。In addition, instead of the process described in ``1'', after the substrate 2' is mounted on the substrate holder 1 of the growth system, the surface of the substrate 2' is irradiated with Se or S molecular beams from the Se raw material cell 3 or the S raw material cell 4. Furthermore, during or before or after this irradiation,
The group Ⅰ element treated layer] 1 may be formed by appropriately heat-treating the substrate 2' depending on the type of the substrate 2' and the group Ⅰ element. The above heat treatment is performed, for example, after irradiation with a group II element molecular beam,
Heat treatment may be performed at 360° C. for 10 minutes in a vacuum.
このような■族元素による前処理が終了すると、基板２
′を成長系の基板ホルダ１に装着しく」１記最初に述べ
た前処理の場合）、基板２′の温度を３００℃程度にし
てＳｅ原料用セル３、Ｓ原料用セル４及びＺｎ原料用セ
ル５からそれぞれＳｅ。When the pretreatment with the group Ⅰ element is completed, the substrate 2
1.In the case of the pretreatment described at the beginning), the temperature of the substrate 2' is set to about 300°C, and the cells 3 for Se raw material, cell 4 for S raw material, and cell 4 for Zn raw material are attached to substrate holder 1 of the growth system. Se from cell 5, respectively.
Ｓ及びＺｎを基板２′の表面に所定時間供給することに
より、第１Ｂ図に示すように、基板２′の■族元素処理
層１１上にＩＩ−ＶＩ族化合物薄膜１２を形成する。に
記原料の供給は同時に行ってもよい］２、交互に行って
一原子層ずつ成長させてもよい。By supplying S and Zn to the surface of the substrate 2' for a predetermined period of time, a II-VI group compound thin film 12 is formed on the group II element treated layer 11 of the substrate 2', as shown in FIG. 1B. The raw materials described in 2. may be supplied at the same time.] 2. The raw materials may be supplied alternately to grow one atomic layer at a time.
なお、ｎ−Ｖｌ族化合物薄膜１２形成時において、光導
入ボート６から成長系への光の照射は行わない。これは
光を照射すると■族元素処理層］１が分解または破壊さ
れる危険性があるからである。Note that when forming the n-Vl group compound thin film 12, the growth system is not irradiated with light from the light introduction boat 6. This is because when irradiated with light, there is a risk that the group Ⅰ element treated layer 1 will be decomposed or destroyed.
このことは、ＩＩ−Ｖｌ族化合物薄膜１２上から波長が
５１９５人のアルゴンイオンレーサを照射してト°地の
基板２′表面からの発光強度を測定すると、発光強度か
時間とともに減少した（すなわち、■族元素処理層１１
が変質した）という実験データからも確認されている。This shows that when the II-Vl group compound thin film 12 was irradiated with an argon ion laser with a wavelength of 5195 and the emission intensity from the surface of the substrate 2' was measured, the emission intensity decreased with time (i.e. , Group ■ element treated layer 11
This has also been confirmed from experimental data.
そＬ２て、ｎ−ｖｒ族化合物薄膜１２形成後に、基板２
′の温度を３００ ℃程度に維持し７て、Ｓｏｎ原料用
セル３Ｓ原ｆ４用セル４及びＺ ｎ原料用セル５からそ
れぞれＳｅ、Ｓ及びＺｎを基板２′の表面に供給するこ
とにより、第１Ｃ図に示すように、■−ｖｔ族化合物薄
膜１２上に所望の■族化合物結晶層］３を形成する。な
お、」−記原料の供給は同時に行ってもよいし、交互に
行って一原子層ずつ成長させてもよい。このとき、光導
入ボート６から成長系へ光を照η１ シて結晶成長の促
進を図ってもい。この場合、■−■族化合物薄膜１２か
■族元素処理層１１の光の保護Ｍ、！：Ｌ、て機能する
ため、光の照射により■族元素処理層１１が分解または
破壊されることはない。なお、Ｚｎ５ｅ／ＺｎＳ等、異
なる亜鉛カルコゲナイド層からなる多層構造の■族化合
物結晶層１３を生成する場合は、各層の形成用の各種原
料の供給を断続的に行う。また、その構成層はＺｎ Ｓ
、Ｚｎ Ｓｃ等のｎ−ｖｘ族化合物、ＣｕＧａ、Ｓ、等
のｉ−ｍ−■２族化合物に限らず、■族元素を構成元素
とした化合物であれば代用可能である。L2, after forming the n-vr compound thin film 12, the substrate 2 is
' by maintaining the temperature at about 300°C and supplying Se, S and Zn to the surface of the substrate 2' from the Son raw material cell 3S raw material cell 4 and the Zn raw material cell 5, respectively. As shown in FIG. 1C, a desired group Ⅰ compound crystal layer] 3 is formed on the Ⅰ-vt group compound thin film 12 . Note that the raw materials listed in "--" may be supplied simultaneously or alternately to grow one atomic layer at a time. At this time, light η1 may be emitted from the light introduction boat 6 to the growth system to promote crystal growth. In this case, the light protection M of the ■-■ group compound thin film 12 or the ■ group element treated layer 11,! :L, so that the group Ⅰ element treated layer 11 will not be decomposed or destroyed by light irradiation. Incidentally, when forming the group II compound crystal layer 13 having a multilayer structure consisting of different zinc chalcogenide layers such as Zn5e/ZnS, various raw materials for forming each layer are intermittently supplied. Moreover, its constituent layer is ZnS
, Zn, Sc, etc., and im-m-2 group compounds such as CuGa, S, etc., but any compound having a group 2 element as a constituent element can be substituted.
このように、■族化合物結晶（■族化合物結晶層］３、
ＩＩ−ＶＴ族化合物薄膜１２）の成長に適合（２，た■
−■化合物を含んた■族元素処理層１−１土に、■族化
合物結晶を成長させるため、結晶品質の高い■族化合物
結晶を得ることができる。In this way, group III compound crystal (group III compound crystal layer) 3,
Suitable for the growth of II-VT group compound thin films 12) (2,
- Since the Group 2 compound crystal is grown on the Group 1 element treated layer 1-1 soil containing the Group 2 compound, the Group 2 compound crystal with high crystal quality can be obtained.
なお、ｒｒ−ｖｔ族化合物薄膜１２の代わりにＩｎｒ−
ｖｉ２族化合物の薄膜を用いても良い。また、ｎ−Ｖｌ
族化合物薄膜〕２は■族元素処理層１１の光の保護用に
形成した膜であるため、必ずしもその結晶品質を高く【
−なくてもよく、また光照射を行わない場合はなくても
よい。Incidentally, instead of the rr-vt group compound thin film 12, Inr-
A thin film of a vi2 group compound may also be used. Also, n-Vl
Since the group compound thin film] 2 is a film formed for the purpose of protecting the group III element treated layer 11 from light, it is not necessarily necessary to have a high crystal quality.
- It may be omitted, and may be omitted if light irradiation is not performed.
以−１−説明したように、この発明によれば、同じ■族
元素を含んた■族元素処理層上に■族元素を構成元素と
【７た化合物半導体の結晶成長を行っているため、基板
上に高い品質の結晶を成長させることができる効果かあ
る。As explained above-1-, according to the present invention, since the crystal growth of a compound semiconductor containing a group Ⅰ element as a constituent element is carried out on a layer treated with a group Ⅰ element containing the same group Ⅰ element, This has the effect of allowing high quality crystals to grow on the substrate.
第１Ａ図ないし第１Ｃ図はこの発明の一実施例であるを
亜鉛カルコゲナイドの結晶成長方法を示す説明図、第２
図は従来の亜鉛カルコゲナイドの結晶成長方法を示す説
明図である。
図において、２′は■−■族化合物半導体結晶基板、１
１は■族元素処理層、１２はｎ−ｖｒ族化合物薄膜、］
３は■族化合物結晶層である。
なお、各図中同一符号は同一または相当部分を示す。
代理人 大 岩 増 Ｍｆｉ第１Ａ図
１］゛■廐元春処理を
第１Ｃ図
第２ コ
才、♀許庁長宮殿
１．事件の表示
平
１．１月［２−１２２４６６
２、発明の名称
）１６導体結晶の成長方法
３、補正をする者
５、補ｉＥの対象
明細書の「発明の詳細な説明の欄」
６、補ｔト、の内容
（１） 明細書第４頁第２行及び第３行の「基板２表
面」を、「基板２」に訂正する。
（２） 明細書第５頁第１８行の「Ｎａ２５ｊを、ｒ
Ｎａ２ＳＪに訂正する。
（３） 明細書第５頁第１９行の１（ＮＨ４）２ＳＸ
Ｊを、「（ＮＨ４）２Ｓｘ」に訂正する。
（４） 明細書第７頁第１３行のｒ５１９５人」を、
ｒ５１４５人」に訂正する。
（５） 明細書第８頁第３行の「所望の」を、「所望
の■族元素を構成元素とした化合物結晶層である」に訂
正する。
（６） 明細書第８頁第８行の「もい。」を、「もよ
い。」に訂正する。
（７） 明細書第８頁第１９行の「このように、」を
、「このように、■族を構成元素とした化合物結晶であ
る」に訂正する。
以上Figures 1A to 1C are explanatory diagrams showing a method for growing zinc chalcogenide crystals according to an embodiment of the present invention;
The figure is an explanatory diagram showing a conventional zinc chalcogenide crystal growth method. In the figure, 2' is a ■-■ group compound semiconductor crystal substrate, 1
1 is a group II element treated layer, 12 is an n-vr group compound thin film, ]
3 is a group II compound crystal layer. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masu Oiwa Mfi Fig. 1A 1] ゛■Regarding the handling of the matter in Fig. 1C Fig. 2 Kosai, ♀ Chief Minister's Palace 1. Display of case January 2001 [2-122466 2, title of invention) 16 Method for growing conductor crystal 3, person making amendment 5, "Detailed description of the invention column" of the subject specification of supplementary iE 6, Contents of Supplement (1) "Surface of substrate 2" in the second and third lines of page 4 of the specification is corrected to "substrate 2." (2) “Na25j, r” on page 5, line 18 of the specification
Corrected to Na2SJ. (3) 1(NH4)2SX on page 5, line 19 of the specification
Correct J to "(NH4)2Sx". (4) "r5195 people" on page 7, line 13 of the specification,
Corrected to 5145 people. (5) In the third line of page 8 of the specification, "desired" is corrected to "is a compound crystal layer containing a desired group (I) element as a constituent element." (6) "Moi." on page 8, line 8 of the specification is corrected to "moyoi." (7) "In this way," on page 8, line 19 of the specification is corrected to "In this way, it is a compound crystal containing group (■) as a constituent element."that's all
Claims (1)
を準備するステップと、 VI族元素またはVI族元素を含んだ化合物により前記基板
表面に対し前処理を施し、前記基板表面上にIII−VI族
化合物を含んだVI族元素処理層を形成するステップと、 前記VI族元素処理層上にVI族元素を構成元素とした化合
物半導体の結晶成長を行うステップとを備えた半導体結
晶の成長方法。(1) A step of preparing a substrate having a surface of a III-V compound semiconductor crystal, and pre-treating the substrate surface with a group VI element or a compound containing a group VI element, and applying a III-V compound semiconductor crystal on the substrate surface. A method for growing a semiconductor crystal, comprising: forming a group VI element treated layer containing a group VI compound; and growing a crystal of a compound semiconductor containing a group VI element as a constituent element on the group VI element treated layer. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12246690A JPH0418723A (en) | 1990-05-11 | 1990-05-11 | Growing process of semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12246690A JPH0418723A (en) | 1990-05-11 | 1990-05-11 | Growing process of semiconductor crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0418723A true JPH0418723A (en) | 1992-01-22 |
Family
ID=14836553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12246690A Pending JPH0418723A (en) | 1990-05-11 | 1990-05-11 | Growing process of semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0418723A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6109408A (en) * | 1997-01-29 | 2000-08-29 | Toyota Jidosha Kabushiki Kaisha | Driving force transmission system |
-
1990
- 1990-05-11 JP JP12246690A patent/JPH0418723A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6109408A (en) * | 1997-01-29 | 2000-08-29 | Toyota Jidosha Kabushiki Kaisha | Driving force transmission system |
| US6315099B1 (en) | 1997-01-29 | 2001-11-13 | Toyota Jidosha Kabushiki Kaisha | Driving force transmission system |
| US6510932B2 (en) | 1997-01-29 | 2003-01-28 | Toyota Jidosha Kabushiki Kaisha | Driving force transmission system |
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