JPH04186787A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH04186787A JPH04186787A JP31400690A JP31400690A JPH04186787A JP H04186787 A JPH04186787 A JP H04186787A JP 31400690 A JP31400690 A JP 31400690A JP 31400690 A JP31400690 A JP 31400690A JP H04186787 A JPH04186787 A JP H04186787A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- active layer
- gas
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000000969 carrier Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 abstract description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052742 iron Inorganic materials 0.000 abstract description 9
- 229910000073 phosphorus hydride Inorganic materials 0.000 abstract description 8
- 229910017052 cobalt Inorganic materials 0.000 abstract description 2
- 239000010941 cobalt Substances 0.000 abstract description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract description 2
- 238000001312 dry etching Methods 0.000 abstract description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野〕
本発明は半導体装置の製造方法に係り、特に半導体レー
ザや進行波型光増幅器などの半導体装置の製造に適した
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method suitable for manufacturing semiconductor devices such as semiconductor lasers and traveling wave optical amplifiers.
従来から行われていたマストランスポート法について説
明する。The conventional mass transport method will be explained.
第２図の様に、ＩｎＰ基板１上にＩｎＧａＡｓＰウェー
ブガイド層２．ＩｎＰストップＩｎＰ層３゜ＩｎＧａＡ
ｓＰ活性層４．Ｐ”−ＩｎＰ クラッド層５．Ｐ” −
ＩｎＧａＡｓＰ キャップ層６及びＳ ｉ ０２層７
を順次積層した後、第３図の様なりッジを形成し、次に
第４図の如く選択エッチにより活性層４をエツチングし
幅を狭くする。この際に活性層４の両サイドにはすきま
ができる。このウェハ１０を第５図の様にＭＯＣＶＤ装
置の石英反応管８内サセプター９上に入れ、燐（Ｐ）供
給のためにＰＨ，ガスが流しながら６５０℃位で約１時
間加熱する。これにより第６図の様に、ＩｎＰ層５から
ＩｎＰが移動し、活性層４の両サイドのすきまを埋め込
んでくれる。As shown in FIG. 2, an InGaAsP waveguide layer 2. InP stop InP layer 3゜InGaA
sP active layer 4. P"-InP cladding layer 5.P"-
InGaAsP cap layer 6 and SiO2 layer 7
After sequentially laminating the active layer 4, a ridge as shown in FIG. 3 is formed, and then the active layer 4 is etched by selective etching to narrow the width as shown in FIG. At this time, gaps are created on both sides of the active layer 4. This wafer 10 is placed on a susceptor 9 in a quartz reaction tube 8 of an MOCVD apparatus as shown in FIG. 5, and heated at about 650° C. for about 1 hour while flowing PH and gas to supply phosphorus (P). As a result, as shown in FIG. 6, InP moves from the InP layer 5 and fills the gaps on both sides of the active layer 4.
上記従来技術は、マストランスポートで埋め込まれたＩ
ｎＰ層のキャリヤ濃度の点について配慮がされておらず
、キャリヤ濃度が１０１６ａｌｌ−３台でｎ−形のこの
ＩｎＰ埋込み層と、Ｐ”−ＩｎＰ クラッド層５との
間にｐｎ接合が形成されるので、この部分から電流が流
れやすく、活性層へのキャリヤ注入が減るという問題が
あった。The above-mentioned conventional technology is based on I
No consideration was given to the carrier concentration of the nP layer, and a pn junction was formed between this n-type InP buried layer and the P''-InP cladding layer 5 with a carrier concentration in the 1016all-3 range. Therefore, there was a problem in that current easily flows from this portion and carrier injection into the active layer is reduced.
本発明は、マストランスポートで埋込まれるＩｎＰ層を
高抵抗化（１０”Ω■以上）し、半導体装置の活性層等
、キャリヤ注入により動作する能動層における注入密度
を増やすことを目的とする。The purpose of the present invention is to increase the resistance of the InP layer buried by mass transport (10" Ω or more) and increase the injection density in active layers that operate by carrier injection, such as the active layer of a semiconductor device. .
上記目的を達成するために、加熱装置を有する反応管内
に、ＰＨ，ガスの様なＰ供給ガスと。In order to achieve the above objective, a P supply gas such as PH gas is added into the reaction tube with a heating device.
ＩｎＰを高抵抗化するＦｅやＣｏを含む有機金属ガスを
同時に流してやりマストランスポートを行ったものであ
る。Mass transport is carried out by simultaneously flowing an organometallic gas containing Fe and Co that increases the resistance of InP.
ＩｎＰを高抵抗化するＦｅやＣＯを含む有機金属ガスを
同時に流しながらマストランスポートを行うとマストラ
ンスポートしたＩｎＰ中にこれらの元素がとり込まれる
。それによって高抵抗化されたＩｎＰが活性層の両サイ
ドを埋込んでくれる。When mass transport is carried out while simultaneously flowing an organometallic gas containing Fe and CO that increases the resistance of InP, these elements are incorporated into the mass-transported InP. As a result, the high resistance InP buries both sides of the active layer.
Ｆｅ及びｃｏはＩｎＰ中１０７ａｎ−’程度の濃度が取
り込まれる。Fe and co are incorporated into InP at a concentration of about 107an-'.
第１図及び第２−第６図を今−炭層いて、本発明に係る
実施例を説明する。以下は、高抵抗ＩｎＰ埋込層を形成
した。進行波型光増器の製造方法に関する。まず第２図
の様にＩｎＰ基板１上にＩｎＧａＡｓＰ（波長１．１５
μｍ）２．ＩｎＰ層３．ＩｎＧａＡｓＰ （波長１．３
μｍ）活性層４゜ＩｎＰ層５ 、 Ｉ ｎ Ｇ ａ Ａ
ｓ Ｐ （波長１．１５μｍ）６を順次結晶成長する
。その上にＳｉＯ２７を通常のホトリソ工程でパターン
を作り、ドライエツチング法により、第３図の様なリッ
ジを形成する。Embodiments according to the present invention will be described with reference to FIG. 1 and FIGS. 2 to 6 showing a coal seam. Below, a high resistance InP buried layer was formed. This invention relates to a method for manufacturing a traveling wave optical multiplier. First, as shown in Fig. 2, InGaAsP (wavelength 1.15
μm)2. InP layer 3. InGaAsP (wavelength 1.3
μm) Active layer 4゜InP layer 5, InGaA
Crystals of s P (wavelength 1.15 μm) 6 are sequentially grown. A pattern of SiO27 is formed thereon by a normal photolithography process, and a ridge as shown in FIG. 3 is formed by dry etching.
この後ウェハを、硫酸：水：過酸化水素水＝４＝１：１
エツチング液中に入れる事によりＩｎＧａＡｓＰ層のみ
がエツチングされ、第４図の様にＩｎＧａＡｓＰ活性層
の幅を狭くすることができる。これを第１図の様にＭＯ
ＣＶＤ装置の反応管内に入れ、ホスフィン（ＰＨ，）ガ
スと有機金属ガスの鉄（Ｆｅ）とコバルト（Ｃｏ）を同
時に流し、ＰＨ３，Ｆｅ、Ｃｏ雰囲気１１内でウェハを
６５０℃位で加熱してやる。After this, the wafer was mixed with sulfuric acid: water: hydrogen peroxide solution = 4 = 1:1.
By placing it in an etching solution, only the InGaAsP layer is etched, and the width of the InGaAsP active layer can be narrowed as shown in FIG. This is MO as shown in Figure 1.
The wafer is placed in a reaction tube of a CVD apparatus, and phosphine (PH) gas and organometallic gases iron (Fe) and cobalt (Co) are flowed simultaneously, and the wafer is heated to about 650° C. in a PH3, Fe, and Co atmosphere 11.
第１図の工程を行うと、第６図に示すようにＩｎＰ層５
のＩｎＰがマストランスポート現象を起こしＩ ｎ Ｇ
ａ Ａ ｓ Ｐ活性層の両サイドのすきまを埋め込ん
でくれる。この際、反応管内にはＩｎＰと結合して半絶
縁性を示すＦｅとＣＯが流れているので、マストランス
ポート時に取り込ま九て高抵抗ＩｎＰ埋込層１２が形成
さ九る。When the process shown in FIG. 1 is carried out, the InP layer 5 as shown in FIG.
InP causes a mass transport phenomenon, and InP
a A s P Fills the gaps on both sides of the active layer. At this time, since Fe and CO, which combine with InP and exhibit semi-insulating properties, are flowing in the reaction tube, they are taken in during mass transport and form a high-resistance InP buried layer 12.
本発明の方法により、活性層の両サイドを高抵抗ＩｎＰ
で埋め込んだ構造をもつ進行波型光アンプは、注入電流
が活性層に集中するので高い利得が得られる効果がある
。By the method of the present invention, both sides of the active layer are formed using high-resistance InP.
A traveling wave optical amplifier with a buried structure has the effect of obtaining high gain because the injected current is concentrated in the active layer.
第７図は半導体レーザに応用した例である。FIG. 7 shows an example of application to a semiconductor laser.
ＩｎＰ基板１３上に、ＩｎＧａＡｓＰ層１４゜ＩｎＧａ
ＡｓＰ活性層１６．ＩｎＧａＡｓＰ層・ １７．ＩｎＰ
クラッド層１８．ＩｎＧａＡｓＰキャップ層１９．高抵
抗ＩｎＰ埋込層１５を上述した実施例と同様に形成する
。この場合も、従来方法でマストランスポートして埋め
込んだものよりも、低しきい値化等に効果がある。On the InP substrate 13, an InGaAsP layer 14°InGa
AsP active layer 16. InGaAsP layer・17. InP
Cladding layer 18. InGaAsP cap layer 19. A high-resistance InP buried layer 15 is formed in the same manner as in the embodiment described above. In this case as well, it is more effective in reducing the threshold value than the conventional method of mass transport and embedding.
本発明によれば、半導体装置の能動層の両側面を高抵抗
ＩｎＰ層で容易に埋込むことができる６According to the present invention, both sides of the active layer of a semiconductor device can be easily filled with a high-resistance InP layer6.
第１図は本発明の実施例に係るマストランスポートの方
法を示した図、第２図から第６図は進行波型光増器の活
性層両サイドに高抵抗ＩｎＰ埋込層を形成するためのプ
ロセスを説明するため図。
第７図は本発明の方法を利用して半導体レーザの活性層
の両側面を埋込んだ構造を説明するための図である。
ＶＪ 岬
ご
第２ ｌ
￥Ｊ３図
￥Ｊ ４ 図FIG. 1 shows a mass transport method according to an embodiment of the present invention, and FIGS. 2 to 6 show high resistance InP buried layers on both sides of the active layer of a traveling wave optical amplifier. Diagram to explain the process. FIG. 7 is a diagram for explaining a structure in which both sides of the active layer of a semiconductor laser are buried using the method of the present invention. VJ Misakigo 2nd l ￥J3 drawing￥J 4 drawing
Claims (1)
造を有する半導体装置の製造方法において、上記能動層
の両側面を高抵抗ＩｎＰで埋め込むために、マストラン
スポートを用いたことを特徴とする半導体装置の製造方
法。 ２、請求項１に記載の半導体装置の製造方法において、
Ｐを供給するガスと、ＩｎＰを結合して半絶縁性を示す
ガスとを同時に流しながら前記マストランスポートを行
う半導体装置の製造方法。 ３、請求項１に記載の半導体装置の製造方法において、
前記能動層が注入されたキャリアにより光を放出するた
めの活性層である半導体装置の製造方法。[Claims] 1. In a method for manufacturing a semiconductor device having a heterostructure with an active layer made of a III-V compound semiconductor, mass transport is used to fill both sides of the active layer with high-resistance InP. A method for manufacturing a semiconductor device, characterized in that: 2. In the method for manufacturing a semiconductor device according to claim 1,
A method for manufacturing a semiconductor device in which the mass transport is performed while simultaneously flowing a gas that supplies P and a gas that combines InP and exhibits semi-insulating properties. 3. The method for manufacturing a semiconductor device according to claim 1,
A method for manufacturing a semiconductor device, wherein the active layer is an active layer for emitting light using injected carriers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31400690A JPH04186787A (en) | 1990-11-21 | 1990-11-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31400690A JPH04186787A (en) | 1990-11-21 | 1990-11-21 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04186787A true JPH04186787A (en) | 1992-07-03 |
Family
ID=18048081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31400690A Pending JPH04186787A (en) | 1990-11-21 | 1990-11-21 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04186787A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7230276B2 (en) | 2002-11-11 | 2007-06-12 | Electronics And Telecommunications Research Institute | Semiconductor optical device having current-confined structure |
| JP2011035077A (en) * | 2009-07-30 | 2011-02-17 | Canon Inc | Method for fabricating semiconductor element, and semiconductor element |
-
1990
- 1990-11-21 JP JP31400690A patent/JPH04186787A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7230276B2 (en) | 2002-11-11 | 2007-06-12 | Electronics And Telecommunications Research Institute | Semiconductor optical device having current-confined structure |
| US7394104B2 (en) | 2002-11-11 | 2008-07-01 | Electronics And Telecommunications Research Institute | Semiconductor optical device having current-confined structure |
| JP2011035077A (en) * | 2009-07-30 | 2011-02-17 | Canon Inc | Method for fabricating semiconductor element, and semiconductor element |
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