JPH04186714A - Mold-chip type solid electrolytic capacitor - Google Patents
Mold-chip type solid electrolytic capacitorInfo
- Publication number
- JPH04186714A JPH04186714A JP31535990A JP31535990A JPH04186714A JP H04186714 A JPH04186714 A JP H04186714A JP 31535990 A JP31535990 A JP 31535990A JP 31535990 A JP31535990 A JP 31535990A JP H04186714 A JPH04186714 A JP H04186714A
- Authority
- JP
- Japan
- Prior art keywords
- mold
- height
- lead
- solid electrolytic
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 34
- 239000007787 solid Substances 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 11
- 239000003822 epoxy resin Substances 0.000 abstract description 8
- 229920000647 polyepoxide Polymers 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 10
- 229910052715 tantalum Inorganic materials 0.000 description 9
- 238000000465 moulding Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、モールドチップ形固体電解コンデンサに関し
、特に弁作用を有する金属粉末の成形対中に陽極リード
を導出し、焼結した陽極体の陽極リードの引出し構造に
関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a molded chip type solid electrolytic capacitor, in particular an anode lead is led out in a molded pair of metal powder having a valve action, and a sintered anode body is formed. This invention relates to an anode lead drawer structure.
従来のモールドチップ固体電解コンデンサは、弁作用を
有する金属粉末の成形体中に陽極リードを成形体中央部
より植立状に導出し、焼結したものを陽極体とし、順次
誘電体層、半導体層及び陰極体層を形成してコンデンサ
素子が形成される。In conventional molded chip solid electrolytic capacitors, an anode lead is led out from the center of the molded body into a molded body of valve-acting metal powder, and the anode lead is sintered to form the anode body. A capacitor element is formed by forming the layers and the cathode body layer.
次に陽極、陰極の外部リード端子となるリードフレーム
を用いてコンデンサ素子の陽極リードとリードフレーム
を溶接、陰極側とリードフレームを導電性接着剤を用い
て接続し、この後順次エポキシ樹脂等によるモールド成
形、外部リード端子成形を行なっていた。Next, the anode lead of the capacitor element and the lead frame are welded using the lead frame that will serve as the external lead terminals of the anode and cathode, and the cathode side and the lead frame are connected using conductive adhesive. After this, epoxy resin etc. Mold forming and external lead terminal forming were performed.
上述した従来のモールドチップ形固体電解コンデンサに
おける陽極体の陽極リード引出しでは、コンデンサの静
電容量の大小によりコンデンサ素子の大きさが異なるこ
とから、外部形状の限定された製品を製造するためには
1 コンデンサ素子の大きさに合わせたリードフレーム
が必要である。In the conventional molded chip type solid electrolytic capacitor described above, in which the anode lead of the anode body is drawn out, the size of the capacitor element differs depending on the capacitance of the capacitor, so in order to manufacture products with limited external shapes, it is necessary to 1. A lead frame that matches the size of the capacitor element is required.
2、コンデンサ素子の大きさに合わせたモールド金型に
おいて上金型、下金型がそれぞれ必要である。2. An upper mold and a lower mold are required in the mold to match the size of the capacitor element.
3、モールド下金型の大きさに合わせて外部リード端子
の曲げ加工を行なう際の金型か必要となる。3. A mold is required for bending the external lead terminals to match the size of the lower mold.
等の問題があり、コストの面で大幅に高くなる欠点があ
る。There are problems such as, and the disadvantage is that the cost is significantly higher.
本発明のモールドチップ形固体電解コンデンサは、陽極
リードを導出した略直方体状の弁作用を有する金属粉末
成形体からなる陽極体に、誘電体層1半導体層、陰極層
を形成し、外部リード端子の接続、樹脂によるモールド
成形、外部リード端子成形してなるモールドチップ形固
体電解コンデンサにおいて、前記成形体の底面となる陽
極リード導出面の隣接面形状および陽極リード導出部の
底面からの高さを一定にし、成形体の高さにより体積を
変えたことを特徴として構成される。The molded chip type solid electrolytic capacitor of the present invention has a dielectric layer 1, a semiconductor layer, and a cathode layer formed on an anode body made of a substantially rectangular parallelepiped metal powder molded body having a valve action from which an anode lead is led out, and an external lead terminal In a molded chip type solid electrolytic capacitor formed by connection, resin molding, and external lead terminal molding, the shape of the adjacent surface of the anode lead lead-out surface, which is the bottom surface of the molded body, and the height of the anode lead lead-out part from the bottom surface. The feature is that the volume is constant and the volume is changed depending on the height of the molded body.
上述のように、本発明のモールドチップ形固体電解コン
デンサは弁作用を有する金属粉末を底面の形・大きさを
一定とする直方体状に成形し、高さを変えることで多種
の静電容量に対応し、成形体中に陽極リードを底面につ
ながる一方の面に底面からの高さを一定として導出して
いるので、リードフレーム、モールド下金型、外部リー
ド端子成形金型が共有できる構造になっている。As mentioned above, the molded chip solid electrolytic capacitor of the present invention is made by molding metal powder with valve action into a rectangular parallelepiped shape with a constant bottom shape and size, and by changing the height, various capacitances can be created. Correspondingly, the anode lead is placed on one side of the molded body connected to the bottom surface with a constant height from the bottom surface, resulting in a structure that allows the lead frame, lower mold mold, and external lead terminal mold to be shared. It has become.
次に、本発明について図面を参照して説明する。第1図
(a) 〜(d)、第2図(a)、(b)は本発明の一
実施例を説明するためのモールドチップ形固体コンデン
サおよび陽極体の断面図である。Next, the present invention will be explained with reference to the drawings. FIGS. 1(a) to (d) and FIGS. 2(a) and (b) are cross-sectional views of a molded chip solid capacitor and an anode body for explaining one embodiment of the present invention.
第2図(a)、(b)に示す如くタンタル粉末を底面を
1.0龍×10鰭高さ1.0+ai+に加圧成形し、底
面につながら一方の面に底面からの高さ0.5mmの位
置から陽極リード導圧し、高真空中で焼結したものを陽
極体1とする。この表面に電解液中で電気化学的に五酸
化タンタルに誘電体被膜2を形成させ、その後、硝酸マ
ンガン液への浸漬熱分解を数回繰り返して二酸化マンガ
ンの半導体層3.さらにグラファイト銀ペーストを焼き
付けて陰極層4を形成させて電極電圧16V靜電容量1
.0μFのコンデンサ素子を製造した。As shown in FIGS. 2(a) and (b), tantalum powder is pressure-molded on the bottom surface to a height of 1.0 dragon x 10 fins, 1.0 + ai+, and while connected to the bottom surface, one surface has a height of 0.0 mm from the bottom surface. Anode body 1 is obtained by applying pressure to the anode lead from a position of 5 mm and sintering it in a high vacuum. A dielectric film 2 of tantalum pentoxide is electrochemically formed on this surface in an electrolytic solution, and then immersion and thermal decomposition in a manganese nitrate solution are repeated several times to form a semiconductor layer 3 of manganese dioxide. Furthermore, a graphite silver paste is baked to form a cathode layer 4, and the electrode voltage is 16V and the capacitance is 1.
.. A 0 μF capacitor element was manufactured.
この後、陰極曲げ部深さ0.5重lのリードフレームを
用いて陽極リードを溶接により、陰極部を導電性接着剤
5により外部リード端子6を接続した。次に深さ0.8
m+aの上金型と深さ0.8mmの下金型の寸法を有す
るモールド金型を用いてエポキシ樹脂7によりモールド
外装し、その後、外部リード端子成形金形を用いて端子
成形を行ない、基準寸法である幅1.6mm高さ1.6
mm長さ3.2mmのモールドチップ形タンタル固体電
解コンデンサを製造した。Thereafter, using a lead frame with a cathode bent portion depth of 0.5 liters, the anode lead was welded, and the cathode portion was connected to an external lead terminal 6 using a conductive adhesive 5. Next, depth 0.8
Using a mold having the dimensions of an upper mold of m+a and a lower mold of depth 0.8 mm, the mold is covered with epoxy resin 7, and then terminal molding is performed using an external lead terminal mold. Dimensions: Width 1.6mm Height 1.6
A molded chip type tantalum solid electrolytic capacitor with a length of 3.2 mm was manufactured.
次に、第1図(a)、(b)に示す如く底面1.0mm
X1.0關高さ1−15韻に加圧成形し底面につながる
一方の面に底面からの高さは第2図(b)と同じ高さの
0.5u+の位置から陽極リードを導出して陽極体1と
し、第2図(a)と同様に誘電体被膜2.半導体層3.
陰極層4を形成させて定格電圧16V靜電容量1,5μ
Fのコンデンサ素子を製造した。Next, as shown in Fig. 1 (a) and (b), the bottom surface is 1.0 mm.
Pressure mold it to x1.0 x height 1-15 mm, and lead out the anode lead from the position of 0.5u+ from the bottom, which is the same height as Fig. 2 (b), on one side connected to the bottom. to form an anode body 1, and a dielectric coating 2. as shown in FIG. 2(a). Semiconductor layer 3.
By forming the cathode layer 4, the rated voltage is 16V and the capacitance is 1.5μ.
A capacitor element of F was manufactured.
この後、第2図<a)と同一のフレームを用いて外部リ
ード端子6を接続した。次に深さ1.31の上金型と第
2図(a)と同じ深さ0.8+*mの下金型の寸法を有
するモールド金型を用いてエポキシ樹脂7によりモール
ド外装し、その後第2図(a>と同じ端子成形金型を用
いて端子成形を行ない、幅1.6龍高さ2.0闘長さ3
.21のモールドチップ形固体電解コンデンサを製造し
た。Thereafter, external lead terminals 6 were connected using the same frame as in FIG. 2<a). Next, using a mold having the dimensions of an upper mold with a depth of 1.31 and a lower mold with the same depth of 0.8 + * m as in Fig. 2 (a), the mold is covered with epoxy resin 7, and then The terminal was formed using the same terminal forming mold as in Figure 2 (a), width 1.6, height 2.0, length 3.
.. Twenty-one molded chip solid electrolytic capacitors were manufactured.
第1図(c)、(d)は、第1図(a)、(b)を従来
の標準的構造で製作したもので第1図(d)に示す如く
底面1 、0anX 1 、 Om+a高さ1.5mm
に加圧成形し、底面につながる一方の面に底面からの高
さの中心にあたる0.75關の位置から陽極リードを導
出して陽極体1とし、第2図(a)と同様に誘電体層2
.半導体層3.陰極層4を形成し、定格電圧16V靜電
容量1.5μFのコンデンサ素子を形成した。次に陰極
曲げ深さ0.8+uのリードフレームを用いて外部リー
ド端子6を接続した。次に、第2図(a)と異なる深さ
1.05龍の上金型と深さ1.05關の下金型の寸法を
有するモールド金型を用いてエポキシ樹脂7によりモー
ルド外装し、その後本モールド下金型寸法に合った第2
図(a)とは異なる端子成形金型を用いて端子成形を行
ない、幅1.6龍、高さ2..1mm、長さ3.2龍の
モールドチップ形タンタル固体電解コンデンサを製造し
た。Figures 1(c) and (d) are manufactured using the conventional standard structure of Figures 1(a) and (b).As shown in Figure 1(d), the bottom surface 1, 0anX 1, Om+a height length 1.5mm
The anode body 1 is formed by pressure-forming the anode body 1 by leading out an anode lead from a position of 0.75 degrees, which corresponds to the center of the height from the bottom surface, on one surface connected to the bottom surface, and forming a dielectric body as shown in FIG. 2(a). layer 2
.. Semiconductor layer 3. A cathode layer 4 was formed, and a capacitor element having a rated voltage of 16V and a capacitance of 1.5 μF was formed. Next, external lead terminals 6 were connected using a lead frame with a cathode bending depth of 0.8+u. Next, using a mold having dimensions of an upper mold with a depth of 1.05 mm and a lower mold with a depth of 1.05 mm, which are different from those shown in FIG. 2(a), the mold is covered with epoxy resin 7. After that, a second mold that matches the dimensions of the lower mold of the main mold.
Terminals were formed using a terminal molding die different from that shown in Figure (a), and the width was 1.6mm and the height was 2mm. .. A molded chip type tantalum solid electrolytic capacitor with a length of 1 mm and a length of 3.2 mm was manufactured.
第3図(a)〜(d)は本発明の第2の実施例を説明す
るためのモールドチップ形固体電解コンデンサおよび陽
極体の断面図である。第3図(b)に示す如く底面1.
0■mX1.o■l高さ0.7m+*に加圧成形し、底
面につながる一方の面に底面からの高さを標準の第2図
(b)と同じ0.5mmの位置から陽極リードを導出し
て陽極体1とし、第2図(a)と同様に誘電体被膜2.
半導体層3.陰極層4を形成させて定格電圧16V靜電
容量0,68μFのコンデンサ素子を製造した。FIGS. 3(a) to 3(d) are cross-sectional views of a molded chip solid electrolytic capacitor and an anode body for explaining a second embodiment of the present invention. As shown in FIG. 3(b), the bottom surface 1.
0■mX1. o■l Pressure molded to a height of 0.7 m + *, and led out the anode lead from the position of 0.5 mm from the bottom, the same height as the standard Fig. 2 (b), on one side connected to the bottom. Anode body 1 and dielectric coating 2. as shown in FIG. 2(a).
Semiconductor layer 3. A cathode layer 4 was formed to produce a capacitor element with a rated voltage of 16V and a capacitance of 0.68 μF.
この後第2図(a)と同一のフレームを用いて外部リー
ド端子6を接続した。次に深さ0−4mmの上金型と第
2図(a>と同じ深さ0.8mmの下金型の寸法を有す
るモールド金型を用いてエポキシ樹脂7によりモールド
外装し、その後第2図(a)と同じ端子成形金型を用い
て端子成形を行ない幅1.6m+m高さ1.2龍長さ3
.2關のモールドチップ形タンタル固体電解コンデンサ
を製造した。Thereafter, external lead terminals 6 were connected using the same frame as in FIG. 2(a). Next, using an upper mold with a depth of 0-4 mm and a lower mold with the same depth of 0.8 mm as in Figure 2 (a), the mold is covered with epoxy resin 7, and then the second The terminal was formed using the same terminal forming mold as in figure (a). Width: 1.6 m + m Height: 1.2 Dragon length: 3
.. Two molded chip type tantalum solid electrolytic capacitors were manufactured.
従来の製造については第3図(c)、(d)に示す如く
底面1 、 ClmmX 1 、 Os+m高さ0.7
■に加圧成形し、底面につながる一方の面に底面からの
高さ0.35mmの位置から陽極リードを導出して陽極
体1とし、第2図(a)と同様に誘電体層2、半導体層
3.陰極層4を形成させて定格電圧16V靜電容量0.
68μFのコンデンサ素子を形成した。次に陰極曲げ深
さ0.4mmのリードフレームを用いて外部リード端子
6を接続した。次に、標準とした第2図(a)に使用す
るものと異なる深さ0.6+uの上金型と深さ0.6v
eの下金型の寸法を有するモールド金型を用いてエポキ
樹脂7によりモールド外装し、その後、同じく第2図(
a)と異なる本モールド下金型寸法に合った端子成形金
型を用いて端子成形を行ない、幅1.6闘高さ1.2龍
長さ3.2龍のモールチップ形タンタル固体電解コンデ
ンサを製造した。Regarding conventional manufacturing, as shown in Fig. 3(c) and (d), the bottom surface 1, ClmmX1, Os+m height 0.7
(2), and an anode lead is led out from a position of 0.35 mm from the bottom on one surface connected to the bottom to form the anode body 1, and a dielectric layer 2, as shown in FIG. 2(a), Semiconductor layer 3. The cathode layer 4 is formed to have a rated voltage of 16V and a capacitance of 0.
A capacitor element of 68 μF was formed. Next, external lead terminals 6 were connected using a lead frame with a cathode bending depth of 0.4 mm. Next, we used an upper mold with a depth of 0.6+u and a depth of 0.6v, which is different from that used in Fig. 2 (a) as standard.
Using a mold having the dimensions of the lower mold e, the mold is covered with epoxy resin 7, and then similarly shown in Fig. 2 (
A molded chip type tantalum solid electrolytic capacitor with a width of 1.6 cm and a height of 1.2 cm and a length of 3.2 cm was formed using a terminal mold that matches the lower mold dimensions of this mold, which are different from a). was manufactured.
なお、第1.第2の実施例においてはタンタルを用いた
モールドチップ形固体電解コンデンサについて説明した
が、アルミニウム等の他の弁作用金属を用いたモールド
チップ形固体電解コンデンサにおいても同様の効果を得
ることができる。In addition, 1. In the second embodiment, a molded chip solid electrolytic capacitor using tantalum has been described, but similar effects can be obtained with a molded chip solid electrolytic capacitor using other valve metals such as aluminum.
以上説明したように本発明は、弁作用を有する金属粉末
を底面の形、大きさを一定とする直方体状に成形し、高
さを変えることで多種の静電容量に対応し、成形体中に
陽極リードを底面にっながる一方の面に底面からの高さ
を一定として導出することにより、リードフレーム、モ
ールド下金型、外部リード端子成形金型が共有できる効
果がある。As explained above, the present invention molds metal powder having a valve action into a rectangular parallelepiped shape with a constant bottom shape and size, and by changing the height, it can accommodate various types of capacitance. By leading the anode lead to one surface connected to the bottom surface with a constant height from the bottom surface, there is an effect that the lead frame, the lower mold mold, and the external lead terminal molding mold can be shared.
第1図(a ) 〜(d、 ) 、第2図(a>、(b
)は本発明の一実施例を説明するためのモールドチップ
形タンタル固体電解コンデンサおよびそれに使用する陽
極体の縦断面図であり第1図(a)。
(b)は第2図(a)、(b)に示す基準静電容量より
大きいチップ形タンタル固体電解コンデンサに本発明を
適用したものの縦断面図、第1図(c)、(d)は第1
図(a)、(b)と同一静電容量のものの従来構造の縦
断面図、第2図は基準静電容量の基準構造の縦断面図、
第3図(a)〜(d)は本発明の他の実施例を説明する
ためのチップ形タンタル固体電解コンデンサおよびそれ
に使用する陽極体の縦断面図で、第3図(a)。
(b)は第2図(a)、(b)に示す基準静電容量より
小さい容量をも持つチップ形タンタル固体電解コンデン
サに適用した他の実施例の縦断面図、第3図(c)、(
d)は第3図(a)。
(b)と同一静電容量の従来構造を適用したものの縦断
面図である。
1・・・陽極体、2・・・誘電体被膜、3・・・半導体
層、4・・・陰極層、5・・・導電性接着剤、6・・・
外部リード端子、7・・・エポキシ樹脂。Figure 1 (a) to (d, ), Figure 2 (a>, (b)
1(a) is a vertical sectional view of a molded chip tantalum solid electrolytic capacitor and an anode body used therein for explaining one embodiment of the present invention. (b) is a longitudinal sectional view of a chip-type tantalum solid electrolytic capacitor to which the present invention is applied, which has a larger capacitance than the reference capacitance shown in FIGS. 2(a) and (b), and FIGS. 1(c) and (d) are 1st
Figures (a) and (b) are vertical cross-sectional views of conventional structures with the same capacitance; Figure 2 is a vertical cross-sectional view of standard structures with standard capacitance;
3(a) to 3(d) are vertical sectional views of a chip-type tantalum solid electrolytic capacitor and an anode body used therein for explaining another embodiment of the present invention; FIG. (b) is a longitudinal sectional view of another embodiment applied to a chip-type tantalum solid electrolytic capacitor having a capacitance smaller than the reference capacitance shown in FIGS. 2(a) and (b), and FIG. 3(c) ,(
d) is Figure 3(a). FIG. 6 is a vertical cross-sectional view of a conventional structure having the same capacitance as in FIG. DESCRIPTION OF SYMBOLS 1... Anode body, 2... Dielectric coating, 3... Semiconductor layer, 4... Cathode layer, 5... Conductive adhesive, 6...
External lead terminal, 7...Epoxy resin.
Claims (1)
属粉末成形体からなる陽極体に、誘電体層,半導体層,
陰極層を形成し、外部リード端子の接続、樹脂によるモ
ールド成形、外部リード端子成形してなるモールドチッ
プ形固体電解コンデンサにおいて、前記成形体の底面と
なる陽極リード導出面の隣接面形状および陽極リード導
出部の底面からの高さを一定にし、成形体の高さにより
体積を変えたことを特徴とするモールドチップ形固体電
解コンデンサ。A dielectric layer, a semiconductor layer, a dielectric layer, a semiconductor layer,
In a molded chip type solid electrolytic capacitor in which a cathode layer is formed, external lead terminals are connected, molded with resin, and external lead terminals are formed, the shape of the adjacent surface of the anode lead lead-out surface that is the bottom surface of the molded body and the anode lead A molded chip type solid electrolytic capacitor characterized by having a constant height from the bottom of the lead-out part and varying the volume depending on the height of the molded body.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31535990A JPH04186714A (en) | 1990-11-20 | 1990-11-20 | Mold-chip type solid electrolytic capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31535990A JPH04186714A (en) | 1990-11-20 | 1990-11-20 | Mold-chip type solid electrolytic capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04186714A true JPH04186714A (en) | 1992-07-03 |
Family
ID=18064467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31535990A Pending JPH04186714A (en) | 1990-11-20 | 1990-11-20 | Mold-chip type solid electrolytic capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04186714A (en) |
-
1990
- 1990-11-20 JP JP31535990A patent/JPH04186714A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20030026064A1 (en) | Solid electrolytic capacitor | |
JP2001185460A (en) | Solid electrolytic capacitor and its manufacturing method and substrate of an integrated circuitfor it | |
JPH07320983A (en) | Structure for solid electrolytic capacitor | |
US6985353B2 (en) | Anode body for solid electrolytic capacitor and solid electrolytic capacitor using the same | |
JP5340092B2 (en) | Solid electrolytic capacitor | |
JPH04186714A (en) | Mold-chip type solid electrolytic capacitor | |
JP3945958B2 (en) | Solid electrolytic capacitor and manufacturing method thereof | |
JP3881481B2 (en) | Manufacturing method for solid electrolytic capacitors | |
JPS6314458Y2 (en) | ||
JP2867514B2 (en) | Chip type solid electrolytic capacitor | |
JPH04164308A (en) | Chip type solid electrolytic tantalum capacitor | |
JPS63124511A (en) | Aluminum solid electrolytic capacitor | |
JP5898927B2 (en) | Chip type solid electrolytic capacitor | |
JPS63283012A (en) | Manufacture of thin solid electrolytic capacitor | |
JPH04101406A (en) | Chip type solid tantalum electrolytic capacitor | |
JP4735251B2 (en) | Solid electrolytic capacitor and manufacturing method thereof | |
JPS61278124A (en) | Manufacture of solid electrolytic capacitor | |
US3458916A (en) | Powder on foil solid tantalum capacitor | |
KR200203310Y1 (en) | Tantal condensor having a coating terminal | |
JP2002008951A (en) | Solid electrolytic capacitor and method of manufacturing the same | |
JPS5930530Y2 (en) | solid electrolytic capacitor | |
JP3424248B2 (en) | Solid electrolytic capacitors | |
JPS6011635Y2 (en) | Electrolytic capacitor | |
WO2018180437A1 (en) | Solid electrolytic capacitor and method for manufacturing same | |
JPH06204097A (en) | Layered solid-state electrolytic capacitor and its manufacture |