JPH04164308A - Chip type solid electrolytic tantalum capacitor - Google Patents

Chip type solid electrolytic tantalum capacitor

Info

Publication number
JPH04164308A
JPH04164308A JP2291535A JP29153590A JPH04164308A JP H04164308 A JPH04164308 A JP H04164308A JP 2291535 A JP2291535 A JP 2291535A JP 29153590 A JP29153590 A JP 29153590A JP H04164308 A JPH04164308 A JP H04164308A
Authority
JP
Japan
Prior art keywords
tantalum
solid electrolytic
foil
elements
type solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2291535A
Other languages
Japanese (ja)
Inventor
Jinko Hori
堀 仁孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2291535A priority Critical patent/JPH04164308A/en
Publication of JPH04164308A publication Critical patent/JPH04164308A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To manufacture the title compact chip type solid electrolytic tantalum capacitor in parallel-connection structure by using the tantalum elements in the structure wherein tantalum sintered bodies are connected to tantalum foils. CONSTITUTION:The esboss parts 22 are provided on tantalum foils 2 and then tantalum powder is pressure-molded and sintered in vacuum atmosphere into tantalum sintered parts 3 connecting to the welded tantalum foils 2. Next, the surfaces of the tantalum foils 2 into which the tantalum sintered bodies 3 are not yet welded are anode-oxidized and then manganese dioxide layers, graphite layers and silver paste layers are successively formed on the tantalum foils 2 to form tantalum elements. Through these procedures, exceeding two tantalum elements are parallel-connected and then covered with an insulating resin 7 as an exterior so as to manufacture the title tantalum capacitor.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は固体電解タンタルコンデンサに関し、特に並列
接続してなるチップ型固体電解タンタルコンデンサに関
する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to solid electrolytic tantalum capacitors, and particularly to chip-type solid electrolytic tantalum capacitors connected in parallel.

〔従来の技術〕[Conventional technology]

従来、この種のチップ型固体電解タンタルコンデンサと
しては第4図に示すように、Ta線10をタンタル焼結
体31に植立したタンタル素子を作成し、陽極端子板5
1及び陰極端子板41に接続し、絶縁樹脂7で外装する
という構造を有していた。
Conventionally, as shown in FIG. 4, this type of chip-type solid electrolytic tantalum capacitor has been manufactured by creating a tantalum element in which a Ta wire 10 is embedded in a tantalum sintered body 31, and an anode terminal plate 5 is attached to the tantalum element.
1 and a cathode terminal plate 41, and was covered with an insulating resin 7.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のチップ型固体電解タンタルコンデンサは
、Ta線10をタンタル焼結体31に植立したタンタル
素子を1個使用している。このタンタル素子を2個以上
並列に接続した構造にすれば、たとえば1μFのタンク
Jし素子さえ作っておけば、2個並列で2μF、3個並
列で3μFと効率の良い生産が可能になるが、構造上非
常に複雑になるため量産が難かしく、小型化に不向きで
あるという欠点を有している。
The conventional chip-type solid electrolytic tantalum capacitor described above uses one tantalum element in which a Ta wire 10 is embedded in a tantalum sintered body 31. If you create a structure in which two or more of these tantalum elements are connected in parallel, for example, if you make a 1μF tank J element, you can achieve efficient production of 2μF for two tantalum elements in parallel and 3μF for three in parallel. However, since the structure is extremely complex, mass production is difficult and it is unsuitable for miniaturization.

本発明の目的は、従来の欠点を除去し、より量産的で、
かつより小型の並列接続構造のチップ型固体電解タンタ
ルコンデンサを提供することにある。
The purpose of the present invention is to eliminate the traditional drawbacks, make it more mass-producible,
Another object of the present invention is to provide a chip-type solid electrolytic tantalum capacitor having a smaller parallel connection structure.

上述した従来のチップ型固体電解コンデンサに対し、本
発明はタンタル箔2にタンタル焼結体3を接続し、タン
タル焼結体3を接続した面を陽極酸化し、陰極層8を形
成し、導電性樹脂層9によりスズ箔1に接続した形のタ
ンタル素子により構成することにより、陽陰径のとり出
しが、導電性接着剤による接続だけでできるようになり
、量産がはるかに容易になる、また構造が単純になるた
め小型化しやすいという相違点を有する。
In contrast to the conventional chip-type solid electrolytic capacitor described above, the present invention connects a tantalum sintered body 3 to a tantalum foil 2, anodizes the surface to which the tantalum sintered body 3 is connected, forms a cathode layer 8, and forms a conductive layer. By constructing the tantalum element connected to the tin foil 1 through the conductive resin layer 9, the positive and negative diameters can be taken out simply by connecting with conductive adhesive, making mass production much easier. Another difference is that the structure is simpler, making it easier to downsize.

C課題を解決するための手段〕 本発明のチップ型固体電解タンタルコンデンサは、タン
タル箔の片面にタンタル粉末を加圧成形し、焼結し、酸
化膜、半導体層、導体層を順次形成したタンタル素子を
2個以上並列接続した構造を有することを特徴とする。
Means for Solving Problem C] The chip-type solid electrolytic tantalum capacitor of the present invention is made of tantalum, which is obtained by pressure-molding tantalum powder on one side of a tantalum foil, sintering it, and sequentially forming an oxide film, a semiconductor layer, and a conductor layer. It is characterized by having a structure in which two or more elements are connected in parallel.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。第1図
は、本発明の一実施例の縦断面図、第2図は第1図中の
タンタル素子部分の拡大図である。まず第2図に示すよ
うに50μm厚のタンタル箔2にエンボス部22を設け
、その上に巾1mm、長さ2mm、厚さ1mmの大きさ
に、12mgのタンタル粉末を加圧成形し、10−5T
orrの真空中、1800℃の温度で30分間焼結を行
ない、タンタル箔2が溶着したタンタル焼結体3を得た
Next, the present invention will be explained with reference to the drawings. FIG. 1 is a longitudinal sectional view of one embodiment of the present invention, and FIG. 2 is an enlarged view of the tantalum element portion in FIG. 1. First, as shown in FIG. 2, an embossed part 22 is provided on a tantalum foil 2 with a thickness of 50 μm, and 12 mg of tantalum powder is pressure-molded onto the embossed part 22 to have a width of 1 mm, a length of 2 mm, and a thickness of 1 mm. -5T
Sintering was carried out for 30 minutes at a temperature of 1800° C. in a vacuum of 1000° C. to obtain a tantalum sintered body 3 to which the tantalum foil 2 was welded.

次に、タンタル箔2のタンタル焼結体3との溶着面及び
タンタル焼結体3を90℃の0.1%リン酸水溶液中に
浸漬し、タンタル箔2のタンタル焼結体3が溶着してい
ない面を陽極とし、100Vまで陽極酸化を行なった。
Next, the welded surface of the tantalum foil 2 with the tantalum sintered body 3 and the tantalum sintered body 3 are immersed in a 0.1% phosphoric acid aqueous solution at 90°C, and the tantalum sintered body 3 of the tantalum foil 2 is welded. Anodization was performed up to 100V using the unprotected surface as an anode.

次に、タンタル箔2のタンタル焼結体3との溶着面及び
タンタル焼結体3を硝酸マンガン液に浸漬し、300℃
で5分間熱分解を行なって二酸化マンガン層を形成し、
グラフディト層、銀ペースト層を順次形成して、定格3
5V・1μFのタンタル素子を形成した。
Next, the welded surface of the tantalum foil 2 with the tantalum sintered body 3 and the tantalum sintered body 3 are immersed in a manganese nitrate solution at 300°C.
pyrolysis for 5 minutes to form a manganese dioxide layer,
Graffito layer and silver paste layer are sequentially formed to achieve a rating of 3.
A tantalum element of 5V and 1 μF was formed.

次に、定格35V・1μFのタンタル素子を第1図に示
すように、平面に置き陰極層側に50μm厚のスズ箔1
を接続した。スズ箔1との接続は第2図に示すように導
電性樹脂層9による。スズ箔1上に絶縁板6をのせその
上にもう1個の定格35V・1μFのタンタル素子をタ
ンタル箔2が下になるようにしてのせ、さらに陰極層側
に50μm厚のスズ箔1を接続した。2個のタンタル素
子のタンタル箔2は右側を上に折り、陽極端子板5に接
続し、スズ箔lは左側を上に折り、陰極端子板4に接続
し、絶縁樹脂7で外装して、2μFのタンタルコンデン
サを作成した。
Next, as shown in Fig. 1, a tantalum element with a rating of 35 V and 1 μF is placed on a flat surface, and a tin foil of 50 μm thick is placed on the cathode layer side.
connected. Connection with the tin foil 1 is made by a conductive resin layer 9 as shown in FIG. Place the insulating plate 6 on the tin foil 1, place another tantalum element with a rating of 35V and 1 μF on top of it with the tantalum foil 2 facing down, and connect the 50 μm thick tin foil 1 to the cathode layer side. did. The tantalum foils 2 of the two tantalum elements are folded upward on the right side and connected to the anode terminal plate 5, and the tin foil l is folded on the left side upward and connected to the cathode terminal plate 4, and covered with insulating resin 7. A 2 μF tantalum capacitor was created.

第3図は本発明の実施例2の縦断面図である。FIG. 3 is a longitudinal sectional view of Example 2 of the present invention.

この実施例では、第2図のタンタル素子を金属板21上
に並べ、陰極層側に金属板11を接続した構造にするこ
とにより、実施例1と比ベコンデンサ本体が底面積は大
きくなるが、厚くならないという利点がある。
In this embodiment, the tantalum elements shown in Fig. 2 are arranged on a metal plate 21, and the metal plate 11 is connected to the cathode layer side, so that the capacitor body has a larger base area than in Example 1. , it has the advantage of not becoming thick.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、タンタル箔にタンタル焼
結体を接続した構造のタンタル素子を使用することによ
り、より量産的に、またより小型の並列接続構造のチッ
プ型固体電解コンデンサを得ることができる効果がある
As explained above, the present invention makes it possible to obtain a chip-type solid electrolytic capacitor with a parallel connection structure that is more mass-producible and smaller by using a tantalum element having a structure in which a tantalum sintered body is connected to a tantalum foil. It has the effect of

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明のチップ型固体電解タンタルコンデンサ
の縦断面図、第2図は、第1図中のタンタル素子部の拡
大図、第3図は本発明の実施例2の縦断面図、第4図は
従来例の縦断面図である。 1・・・スズ箔、2・・・タンタル箔、3・・・タンタ
ル焼結体、4゛・・・陰極端子板、5・・・陽極端子板
、6・・・絶縁板、7・・・絶縁樹脂、8・・・陰極層
、9・・・導電性樹脂層、10・・・タンタル線、11
・・・金属板、21・・・金属板、31・・・タンタル
焼結体、41・・・陰極端子板、51・・・陽極端子板
、22・・・エンボス部。
FIG. 1 is a longitudinal cross-sectional view of a chip-type solid electrolytic tantalum capacitor of the present invention, FIG. 2 is an enlarged view of the tantalum element portion in FIG. 1, and FIG. 3 is a longitudinal cross-sectional view of Example 2 of the present invention. FIG. 4 is a longitudinal sectional view of a conventional example. DESCRIPTION OF SYMBOLS 1...Tin foil, 2...Tantalum foil, 3...Tantalum sintered body, 4'...Cathode terminal plate, 5...Anode terminal plate, 6...Insulating plate, 7... - Insulating resin, 8... Cathode layer, 9... Conductive resin layer, 10... Tantalum wire, 11
... Metal plate, 21 ... Metal plate, 31 ... Tantalum sintered body, 41 ... Cathode terminal plate, 51 ... Anode terminal plate, 22 ... Embossed part.

Claims (3)

【特許請求の範囲】[Claims] 1.タンタル箔の片面にタンタル粉末を加圧成形し焼結
を行ない、酸化膜,半導体層,導体層を順次形成して成
るタンタル素子を2個以上並列接続した構造を有するこ
とを特徴とするチップ型固体電解タンタルコンデンサ。
1. A chip type characterized in that it has a structure in which two or more tantalum elements are connected in parallel, each of which is formed by press-molding tantalum powder on one side of tantalum foil and sintering it to sequentially form an oxide film, a semiconductor layer, and a conductor layer. Solid electrolytic tantalum capacitor.
2.複数個のタンタル素子の陰極層にスズ箔を接続し、
該スズ箔を陰極端子板に接続し、タンタル箔の未酸化部
分を陽極端子にそれぞれ接続し並列接続を構成したこと
を特徴とする請求項1記載のチップ型固体電解タンタル
コンデンサ。
2. Connect tin foil to the cathode layer of multiple tantalum elements,
2. The chip type solid electrolytic tantalum capacitor according to claim 1, wherein the tin foil is connected to the cathode terminal plate, and the unoxidized portions of the tantalum foil are connected to the anode terminal to form a parallel connection.
3.複数個のタンタル素子を下部金属上に並べてタンタ
ル箔と金属板と接続し、陰極層に接続したスズ箔は上部
金属板に接続し並列接続を構成したことを特徴とする請
求項1記載のチップ型固体電解タンタルコンデンサ。
3. The chip according to claim 1, characterized in that a plurality of tantalum elements are arranged on the lower metal and connected to the tantalum foil and the metal plate, and the tin foil connected to the cathode layer is connected to the upper metal plate to form a parallel connection. type solid electrolytic tantalum capacitor.
JP2291535A 1990-10-29 1990-10-29 Chip type solid electrolytic tantalum capacitor Pending JPH04164308A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2291535A JPH04164308A (en) 1990-10-29 1990-10-29 Chip type solid electrolytic tantalum capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2291535A JPH04164308A (en) 1990-10-29 1990-10-29 Chip type solid electrolytic tantalum capacitor

Publications (1)

Publication Number Publication Date
JPH04164308A true JPH04164308A (en) 1992-06-10

Family

ID=17770163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2291535A Pending JPH04164308A (en) 1990-10-29 1990-10-29 Chip type solid electrolytic tantalum capacitor

Country Status (1)

Country Link
JP (1) JPH04164308A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6351371B1 (en) 1999-04-16 2002-02-26 Matsushita Electric Industrial Co., Ltd. Electrode for electrolytic capacitor
US20190252127A1 (en) * 2018-02-12 2019-08-15 Avx Corporation Solid Electrolytic Capacitor for a Tantalum Embedded Microchip
WO2023189736A1 (en) * 2022-03-28 2023-10-05 株式会社村田製作所 Electrolytic capacitor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6351371B1 (en) 1999-04-16 2002-02-26 Matsushita Electric Industrial Co., Ltd. Electrode for electrolytic capacitor
US6464739B2 (en) 1999-04-16 2002-10-15 Matsushita Electric Industrial Co., Ltd. Electrode for electrolytic capacitor and process of producing the same
US20190252127A1 (en) * 2018-02-12 2019-08-15 Avx Corporation Solid Electrolytic Capacitor for a Tantalum Embedded Microchip
US11257629B2 (en) * 2018-02-12 2022-02-22 KYOCERA AVX Components Corporation Solid electrolytic capacitor for a tantalum embedded microchip
WO2023189736A1 (en) * 2022-03-28 2023-10-05 株式会社村田製作所 Electrolytic capacitor

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