JPH04185106A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH04185106A JPH04185106A JP31532790A JP31532790A JPH04185106A JP H04185106 A JPH04185106 A JP H04185106A JP 31532790 A JP31532790 A JP 31532790A JP 31532790 A JP31532790 A JP 31532790A JP H04185106 A JPH04185106 A JP H04185106A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- mmic
- chip
- heater
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 230000010355 oscillation Effects 0.000 claims abstract description 11
- 230000005669 field effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 230000000630 rising effect Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 16
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 2
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特にガリウムひ素（以下Ｇ
ａＡｓと記す）等の半絶縁性化合物基板上に形成された
マイクロ波モノリシック集積回路（以下ＭＭＩＣと記す
）発振器に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor devices, and particularly relates to gallium arsenide (hereinafter referred to as G
The present invention relates to a microwave monolithic integrated circuit (hereinafter referred to as MMIC) oscillator formed on a semi-insulating compound substrate such as aAs (hereinafter referred to as MMIC).
半絶縁性化合物基板上に電界効果トランジスタ（以下Ｆ
ＥＴと記す）構造の能動素子とこの能動素子を機能させ
る受動素子からなるＭＭＩＣは、高周波特性に優れ、小
型、低価格化、高量産性であることから特にＩＧＨｚ以
上の周波数領域にて実用化が進んでいる。特にＸ＝Ｋｕ
帯と呼ばれるＩＧＨｚ帯は、衛星放送の普及やＶＳＡＴ
（小型衛星地球局）利用の拡大により著しく伸びてい
る市場であり、ＭＭＩＣが最も望まれている市場である
。A field effect transistor (hereinafter F) is fabricated on a semi-insulating compound substrate.
MMIC, which consists of an active element (denoted as ET) structure and a passive element that makes this active element function, has excellent high frequency characteristics, is compact, low cost, and can be mass-produced, so it has been put to practical use especially in the frequency range of IGHz or higher. is progressing. Especially X=Ku
The IGHz band, also known as
(Small satellite earth stations) This is a market that is growing significantly due to the expansion of usage, and MMIC is the most desired market.
このようなマイクロ波を利用した通信は、ＩＧＨｚ付近
を第１中間周波数とする為に、例えば１２ＧＨｚからＩ
ＧＨｚへの周波数変換回路を必要とする。この周波数変
換回路では、例えば１ＩＧＨｚの局部発振器を有してい
る。Communication using such microwaves uses, for example, 12 GHz to IGHz as the first intermediate frequency.
Requires frequency conversion circuit to GHz. This frequency conversion circuit includes, for example, a 1 IGHz local oscillator.
従来のＭＭＩＣによる局部発振の半導体装置に関し、図
を用いて説明する。A local oscillation semiconductor device using a conventional MMIC will be described with reference to the drawings.
第４図は、従来のＭＭＩＣによる局部発振器のＭＭＩＣ
レイアウト図及び周辺回路図である。Figure 4 shows a local oscillator MMIC using a conventional MMIC.
They are a layout diagram and a peripheral circuit diagram.
例えばＧａＡｓ基板上に回路が形成された大きさｌＸｌ
Ｘ０．１４ｎｏのＭＭＩＣチップ１には、例えばＷｇ−
’４００μｍ、！１ｇ＝０．５ｐｍのＦＥＴ２及び周辺
回路３が形成されている。ＦＥＴ２には外部からバイア
ス電圧がＶ。。端子４から例えば−０，２ＶがＶ。Ｄ端
子５から例えば３ｖが供給される。出力部６の後には誘
電体共振器７が付き、発振出力が出力端子８から例えば
周波数ｆ＝１０．６ＧＨｚ、出力Ｐ、＝＋６ｄＢが出力
される。発振器の発振周波数は、温度変化に対し変動し
易い。For example, the size lXl of a circuit formed on a GaAs substrate
For example, Wg-
'400μm! 1g=0.5pm FET 2 and peripheral circuit 3 are formed. A bias voltage is applied to FET2 from the outside. . For example, -0.2V from terminal 4 is V. For example, 3V is supplied from the D terminal 5. A dielectric resonator 7 is attached after the output section 6, and an oscillation output is outputted from an output terminal 8 at a frequency f=10.6 GHz and an output P=+6 dB, for example. The oscillation frequency of the oscillator tends to fluctuate due to temperature changes.
例えばＭＭＩＣチップ１単体では２０ｐｐｍの温度特性
がある。これを抑える為にＭＭＩＣチップｌを組み込む
シャーシ内にはサーシスタ１１を配して発振回路の温度
を検圧し、ヒータ素子１２の電流をコントロールする事
で発振器全体の温度制御をしていた。For example, a single MMIC chip 1 has a temperature characteristic of 20 ppm. In order to suppress this, a sursistor 11 is placed inside the chassis in which the MMIC chip l is installed, and the temperature of the oscillator circuit is detected, and the temperature of the entire oscillator is controlled by controlling the current of the heater element 12.
第５図は、従来の局部発振器の構造図である。FIG. 5 is a structural diagram of a conventional local oscillator.
例えば真ちゅうによるンヤーシ１３に例えば厚さｔ＝０
．３８１ｍｍのセラミック基板１４が半田付けされ、Ｍ
ＭＩＣチップｌが基板１４上に半田付けされている。シ
ャーシ】３内にはサーシスタ１１とヒータ素子１２がＭ
ＭＩＣチップ１とは別に組み込まれていた。For example, the thickness t=0 for the string 13 made of brass.
．． A 381 mm ceramic board 14 is soldered, and M
A MIC chip l is soldered onto the substrate 14. Chassis] Inside 3, a sursistor 11 and a heater element 12 are installed.
It was incorporated separately from MIC chip 1.
〔発明が解決しようとする課題〕。[Problem to be solved by the invention].
上述した従来の半導体装置は、発熱部がＭＭＩＣチップ
１内のＦＥＴ２であるのに対し、これより例えば１０薗
離れたシャーシ部をサーシスタ１１で感知する為に、Ｆ
ＥＴ２の温度変化に対するサーシスタ１１特性の直線性
の限界と、ヒータ素子１２がＦＥＴ２及び全体の温度を
変える為の所要時間から、発振器の安定度には例えば８
ｐｐｍといった限界があり問題であった。In the conventional semiconductor device described above, the heat generating part is the FET 2 in the MMIC chip 1, but in order to sense the chassis part, which is, for example, 10 steps away from this, by the sursistor 11, the FET 2 is used as the heat generating part.
The stability of the oscillator is, for example, 8, due to the limit of linearity of the sursistor 11 characteristic with respect to temperature change of ET2 and the time required for the heater element 12 to change the temperature of FET2 and the whole.
This was a problem because there was a limit such as ppm.
また、サーシスタ１１．ヒータ素子１２を外付けする分
、小型化を妨げること。ヒータ素子１２の容量に例えば
ＩＷといった容量が必要であることから消費電力も大き
くかつそのうちの大半がヒータ素子１２で消費されると
いう問題点もあった。Also, the servistor 11. Since the heater element 12 is externally attached, miniaturization is hindered. Since the heater element 12 requires a capacity such as IW, there is also a problem in that the power consumption is large and most of the power is consumed by the heater element 12.
本発明の半導体装置は、半絶縁性化合物基板の表面上に
電界効果トランジスタ構造とそれを機能させる受動素子
からなる発振回路が形成されたマイクロ波モノリシック
集積回路を有する半導体装置に於いて、該マイクロ波モ
ノリシック集積回路内にダイオード及び発熱素子を前記
発振回路と高周波的に独立して配置し、且つ、該ダイオ
ードの温度依存性を該発熱素子に流れる電流に変換する
回路を有したことを特徴とする半導体装置が得られる。The semiconductor device of the present invention is a semiconductor device having a microwave monolithic integrated circuit in which an oscillation circuit consisting of a field effect transistor structure and a passive element for functioning the field effect transistor structure is formed on the surface of a semi-insulating compound substrate. A diode and a heating element are arranged in a wave monolithic integrated circuit independently from the oscillation circuit in terms of high frequency, and a circuit is provided for converting the temperature dependence of the diode into a current flowing through the heating element. A semiconductor device is obtained.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は、本発明の一実施例を説明するＭＭＩＣによる
局部発振器のＭＭＩＣレイアウト図及び周辺回路図であ
る。例えばＧ ａ Ａ ｓ基板上に回路が形成された大
きさｌＸｌＸ０．１４ｍｍのＭＭＩＣチップ１には例え
ばＷｇ＝４００μｍ、 （ｌ ｇ＝０．５μｍのＦＥＴ
２及び周辺回路３が形成されている。FIG. 1 is an MMIC layout diagram and peripheral circuit diagram of a local oscillator using an MMIC, explaining an embodiment of the present invention. For example, an MMIC chip 1 with a size of lXlx0.14 mm on which a circuit is formed on a GaAs substrate has a FET of Wg=400 μm and (l g=0.5 μm).
2 and a peripheral circuit 3 are formed.
ＭＭＩＣチップ１の主表面上において、発振用ＦＥＴ２
の近傍例えば５０μｍ離れたところに例えばｆｆｇ＝４
μｍ、Ｗｇ＝５０μｍのショットキーダイオード′２１
がレイアウトされ形成されている。また、例えばＷｇ＝
１．０ ＯＣＪμｍ、 ４ ｇ＝０５μｍのヒータＦ
ＥＴ２２も例えば５０μｍ離れたところにレイアウトさ
れている。On the main surface of the MMIC chip 1, the oscillation FET 2
For example, ffg=4 in the vicinity of, for example, 50 μm away.
μm, Wg=50μm Schottky diode '21
are laid out and formed. Also, for example, Wg=
1.0 OCJμm, 4g=05μm heater F
The ET22 is also laid out at a distance of, for example, 50 μm.
ＦＥＴ２の温度上昇は、近傍のダイオード２１の立ち上
がり電圧Ｖ’ｆの変動として端子（１）３１に検出され
る。例えばＶｆの温度依存性は２ｍＶ／℃である。この
端子（１）３１に検出された電圧は、オペアンプ３２を
介してヒータＦＥＴ２２のゲート電圧をコントロールす
る事で、ヒータＦＥＴ２２のドレイン電流を制御する。The temperature rise of the FET 2 is detected at the terminal (1) 31 as a change in the rising voltage V'f of the nearby diode 21. For example, the temperature dependence of Vf is 2 mV/°C. The voltage detected at this terminal (1) 31 controls the gate voltage of the heater FET 22 via the operational amplifier 32, thereby controlling the drain current of the heater FET 22.
第２図は、本発明の第二の実施を説明するＭＭＩＣによ
る局部発振器のＭＭＩＣレイアウト図及び周辺回路図で
ある。例えばＧａＡｓ基板上に回路が形成された大きさ
ｌＸｌＸ０．１４ｓ＋のＭＭＩＣチップ１には例えばＷ
ｇ”４００μｍ、！！ ｇ＝０．５μｍのＦＥＴ２及び
周辺回路３が形成されている。FIG. 2 is an MMIC layout diagram and peripheral circuit diagram of a local oscillator using an MMIC, explaining a second implementation of the present invention. For example, in the MMIC chip 1 having a circuit formed on a GaAs substrate and having a size of lXlX0.14s+, for example, W
g”400 μm!! FET 2 and peripheral circuit 3 with g=0.5 μm are formed.
ＭＭＩＣチップ１の主表面上において、発振用ＦＥＴ２
の近傍例えば５０μｍ離れたところ例えばｆ１ｇ＝４μ
ｒｎ、Ｗｇ＝５０ｐｍのシ、ｉ＋ットキーダイオード２
１がレイアウトされ形成されている。On the main surface of the MMIC chip 1, the oscillation FET 2
Nearby, for example, 50 μm away, for example, f1g=4μ
rn, Wg=50pm, i+tkey diode 2
1 is laid out and formed.
また、例えばイオン注入抵抗の１００Ω抵抗２３も例え
ば５０μｍ離れたところにレイアウトされている。Further, for example, a 100Ω resistor 23, which is an ion implantation resistor, is also laid out at a distance of, for example, 50 μm.
ＦＥＴ２の温度上昇は、近傍のダイオード２１の立ち上
り電圧Ｖｆの変動として検出され、例えば温度依存性２
ｍＶ／’Ｃ、オペアンプ３２を介し、抵抗２３の電流を
制御する。The temperature rise of the FET 2 is detected as a fluctuation in the rising voltage Vf of the nearby diode 21, and for example, the temperature dependence 2
mV/'C, the current of the resistor 23 is controlled via the operational amplifier 32.
第３図は、本発明の半導体装置の構造図である。FIG. 3 is a structural diagram of the semiconductor device of the present invention.
例えば真ちゅうによるシャーシ１３に例えば厚さｔ＝０
．３８１−のセラミック基板１４が半田付けされ、ＭＭ
ＩＣチップ１が基板１４上に半田付けされている。シャ
ーシ１３内にはＭＭＩＣチップ１と誘電体共振器７のみ
で構成できる。For example, the chassis 13 made of brass has a thickness t=0.
．． 381- ceramic substrate 14 is soldered, MM
An IC chip 1 is soldered onto a substrate 14. The chassis 13 can be configured with only the MMIC chip 1 and the dielectric resonator 7.
以上説明したように、本発明はＭＭＩＣチップ１内に７
ヨノトキータイオード２１とヒータＦＥＴ２２．抵抗２
３を配し、タイｉ−Ｆ’２１１１７）Ｖｆの温度特性を
ヒータＦＥＴ２２．抵抗２３の電流を制御することでＭ
ＭＩＣチップ１の温度を安定させ発振周波数を例えば５
ｐｐｍ以下に安定する事ができる。これは、ダイオー
ド２１で熱検出しヒータＦＥＴ２２．抵抗２３にて温度
制御する部分がＭＭＩＣチップｌ上にある事で実現でき
る効果である。更に、温度制御の電流も例えば従来の１
／１０程度に低減できる。As explained above, the present invention has seven devices in the MMIC chip 1.
Yonoto key tie ode 21 and heater FET 22. resistance 2
Heater FET22. By controlling the current of the resistor 23, M
The temperature of the MIC chip 1 is stabilized and the oscillation frequency is set to 5, for example.
It can be stabilized below ppm. This detects the heat with the diode 21 and the heater FET 22. This effect can be achieved because the portion whose temperature is controlled by the resistor 23 is located on the MMIC chip l. Furthermore, the current for temperature control is also different from the conventional one, for example.
It can be reduced to about /10.
タイオード２１．ヒータＦＥＴ２２．抵抗２３は、ＭＭ
ＩＣチップ１内のＦＥＴ２と同じプロセスで形成できコ
スト的には従来と同じくして製造できる。Tiode 21. Heater FET22. The resistor 23 is MM
It can be formed by the same process as the FET 2 in the IC chip 1, and can be manufactured at the same cost as conventional methods.
第１図は本発明の一実施例を示すＭＭＩＣレイアウト図
及び周辺回路図、第２図は本発明の第２の実施例を示す
ＭＭＩＣレイアウト図及び周辺回路図、第３図は本発明
の実施例を示す構造図、第４図は従来例のＭＭＩＣレイ
アウト図及び周辺回路図、第５図は従来例の構造図であ
る。
１・・・・・・ＭＭＩＣチップ、２・・・・・ＦＥＴ、
３・・・・・周辺回路、４・・・・・・ＶＱ（ｌ端子、
５・・・・・・ｖ、Ｄ端子、６・・・・・出力部、７・
・・・・・誘電体共振器、８・・・・・・出力端子、１
１・・・・・・サーミスタ、１２・・・・・・ヒータ素
子、１３・・・・・シャーシ、１４・・・・・・基板、
２１・・・・・・ダイオード、２２・・・・・・ヒータ
ＦＥＴ、２３・・・・・抵抗、３１・・・・・・端子（
１）、３２・・・・・・オペアンプ。
代理人 弁理士 内 原 音
弔３図FIG. 1 is an MMIC layout diagram and peripheral circuit diagram showing an embodiment of the invention, FIG. 2 is an MMIC layout diagram and peripheral circuit diagram showing a second embodiment of the invention, and FIG. 3 is an implementation of the invention. A structural diagram showing an example, FIG. 4 is an MMIC layout diagram and peripheral circuit diagram of a conventional example, and FIG. 5 is a structural diagram of a conventional example. 1...MMIC chip, 2...FET,
3... Peripheral circuit, 4... VQ (l terminal,
5...v, D terminal, 6...output section, 7...
...Dielectric resonator, 8...Output terminal, 1
1... Thermistor, 12... Heater element, 13... Chassis, 14... Board,
21... Diode, 22... Heater FET, 23... Resistor, 31... Terminal (
1), 32... operational amplifier. Agent Patent Attorney Otohara Uchihara Illustration 3
Claims (1)
造とそれを機能される受動素子からなる発振回路が形成
されたマイクロ波モノリシック集積回路を有する半導体
装置に於いて、該マイクロ波モノリシック集積回路内に
ダイオード及び発熱素子を前記発振回路と高周波的に独
立して配置し、且つ、該ダイオードの温度依存性を該発
熱素子に流れる電流に変換する回路を有したことを特徴
とする半導体装置。In a semiconductor device having a microwave monolithic integrated circuit in which an oscillation circuit consisting of a field effect transistor structure and a passive element functioning thereon is formed on the surface of a semi-insulating compound substrate, in the microwave monolithic integrated circuit. A semiconductor device comprising: a diode and a heating element arranged independently from the oscillation circuit in terms of high frequency; and a circuit that converts the temperature dependence of the diode into a current flowing through the heating element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31532790A JPH04185106A (en) | 1990-11-20 | 1990-11-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31532790A JPH04185106A (en) | 1990-11-20 | 1990-11-20 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04185106A true JPH04185106A (en) | 1992-07-02 |
Family
ID=18064074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31532790A Pending JPH04185106A (en) | 1990-11-20 | 1990-11-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04185106A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5517053A (en) * | 1995-01-09 | 1996-05-14 | Northrop Grumman Corporation | Self stabilizing heater controlled oscillating transistor |
-
1990
- 1990-11-20 JP JP31532790A patent/JPH04185106A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5517053A (en) * | 1995-01-09 | 1996-05-14 | Northrop Grumman Corporation | Self stabilizing heater controlled oscillating transistor |
| WO1996021950A1 (en) * | 1995-01-09 | 1996-07-18 | Northrop Grumman Corporation | Self stabilizing heater controlled oscillating transistor |
| JP2006344983A (en) * | 1995-01-09 | 2006-12-21 | Northrop Grumman Corp | Automatic stabilization heater control oscillation transistor |
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