JPH04174327A - Infrared rays temperature image measuring method and device and heating device which is equipped with it, control method of heating temperature, and film-forming device - Google Patents

Abstract

PURPOSE:To enable temperature distribution in wide range to be measured by picking up image while dividing infrared rays image-pickup region of a substrate into a plurality of portions, converting each infrared rays image information into infrared rays temperature image information, synthesizing it, and then reproducing temperature distribution of the entire substrate. CONSTITUTION:A duct 5 is provided at the front of a light-receiving part of an infrared rays camera 5 and an infrared rays image region which can be picked up at one time is limited to a visual field through the duct 5. Also, a camera 4 is provided with an argon cylinder 16 for cooling an image pick-up element through a heat-insulating expansion of argon and the picked up infrared rays image is converted to a set temperature level, thus obtaining a color display temperature image. Data in only a specified range is transferred to the picked-up temperature image, position data is transmitted from a device 7 to a linear stage control device 11, and the camera 4 and the duct 5 are moved to a specified position. Then, when a transport mechanism is controlled by the device 7 and a substrate 1 completes step transport, the device 7 measures temperature distribution of a next compartment, repeats it for a plurality of times, and then measures temperature of the entire measurement region.

Description

[Detailed description of the invention]

[0001]

[Industrial application field]

The present invention relates to a method and apparatus for measuring the temperature of an object using an infrared image, a heating apparatus equipped with the same, a heating temperature control method, and a film forming apparatus. [0002]

[Conventional technology]

Traditionally, the method of easily measuring the temperature of a heated object is as follows:
Generally, the following two methods are used. The first method is to bring a thermocouple into contact with the object to be measured and measure the electromotive force to determine the temperature. For example, as described in JP-A-60-131430, this method is applicable to thermoelectric substrates that use both sides of the substrate, such as semiconductor substrates, magnetic disk substrates, and optical disk substrates. There is a problem in that by bringing the pairs into contact, the surfaces of the substrates are damaged. Further, there is a possibility that dust may be generated due to contact. Furthermore, with this measurement method, it is only possible to measure the local temperature of the part where the thermocouple is in contact, and it is very difficult to measure the temperature distribution of the object over a wide area. [0003] The second method is to measure the infrared intensity of a specific wavelength emitted from the object to be measured, and calculate the temperature from the emissivity of the object to be measured and a temperature conversion table. The relationship between the blackbody radiation intensity, infrared spectral distribution, and temperature is calculated using a blank (P
It is clear in principle that it is uniquely determined by the law of lanck). This method is used, for example, in Japanese Patent Application Laid-Open No. 60-131
430, JP-A-62-79641, JP-A-63-241
As described in Publication No. 33 and the like, the temperature of the object to be measured can be measured without contacting the object. However, JP-A-60-131430, JP-A-62-79
No. 641 uses an optical fiber made of quartz or the like to guide infrared rays to a detector to measure the temperature, which means that the minus point is measured. Therefore, it was not suitable for measuring two-dimensional temperature distribution. [0004] On the other hand, it is well known that an infrared imaging device, a so-called infrared camera (also called a thermography, etc.) is generally used as a means to measure two-dimensional temperature distribution without contact. It is as follows. This method captures the infrared rays emitted from the object to be measured as a two-dimensional infrared image, and converts the temperature from the infrared intensity of this image to obtain a temperature image. In this connection, for example, Japanese Patent Application Laid-Open No. 63-217238 can be cited. According to this, the substrate is scanned linearly with a scanner, the mirror block MB is rotated around the optical axis OX,
As a result, two-dimensional scanning is performed to measure the infrared intensity to determine the temperature distribution of the substrate. [0005] In conventional vacuum thin film forming apparatuses that require precise temperature control, when heating a substrate moving within a vacuum chamber, a heating element (heater) such as an infrared lamp heater or a heating wire heater is used. The base was heated. At this time, the method of controlling the heating temperature of the base is to measure the temperature at a fixed specific point near the heating element or the base using a thermocouple, and perform feedback control so that this temperature becomes the target temperature. In addition, there is also a method of controlling the temperature of the heater by simply controlling the current value flowing through the heater without performing feedback control based on temperature measurement. The temperature of the base is controlled to a desired temperature by the radiant heat emitted from the heating element and the elapsed time. These methods have been adopted in many cases because it is difficult to directly measure the temperature of a substrate moving within a vacuum chamber and control the temperature of the substrate itself. [0006]

[Problem to be solved by the invention]

In the conventional technique described above, the method of measuring a two-dimensional temperature distribution using an infrared camera is effective when the measurement range of the object to be measured is narrow. For example, when measuring a semiconductor substrate, the measurement range was approximately 200 mm in diameter, and the system functioned satisfactorily. However, when the area becomes larger than this, it is easy to measure the temperature distribution within the target range due to equipment limitations, especially in vacuum film forming equipment using vapor deposition or sputtering methods, heat treatment furnaces, vacuum heating tanks, etc. I couldn't do it. For example, in vacuum film forming equipment and heat treatment furnaces, the inside of the tank is vacuum,
Due to high temperatures, the window that transmits infrared rays for measurement cannot be made larger than necessary. Therefore, for example, 50
When measuring an object with a size of about 0 mm x 700 mm, the temperature distribution could not be measured with a single infrared camera. Furthermore, it was necessary to be able to measure the temperature even when the object to be measured moved within the tank, but until now there was no means to measure the temperature of the object to be measured. There wasn't. [0007] On the other hand, there is a method of imaging the object to be measured from a distance with an infrared camera and performing measurements over a wide range, but in this case, the optical path becomes longer, the measurement system becomes larger, and the temperature image becomes smaller. I end up. Another problem arises in that the atmosphere existing between the infrared camera and the object to be measured absorbs infrared rays, adversely affecting measurements. Further, in the heating control method described in the above-mentioned Japanese Patent Application Laid-Open No. 63-217238, no consideration is given to the fact that infrared rays emitted from the heater have an adverse effect on the measurement of the substrate temperature. As described above, when measuring the temperature distribution over a large area without contact, there has been no effective means for easily and accurately measuring the temperature of a large-area object that moves in a vacuum or at high temperatures. [0008] When heating an object having a large area, temperature distribution often becomes a problem. For example, with respect to the above-mentioned thin film forming apparatus, if a non-uniform temperature distribution occurs on the substrate on which the film is formed, the quality of the formed film will vary. Therefore, a heating device that uniformly heats the substrate and a function to control the heater are required. It was also necessary to observe the temperature distribution of the substrate to see if it was being heated uniformly. To explain in more detail the conventional heating control method of the substrate in the above-mentioned film forming apparatus, the following two methods are often used, the first method is heating element attachment or substrate heating control. In this method, the temperature of the heating element is measured using a fixed thermocouple, and the input current of the heating element is feedback-controlled so that the measured value matches the target value temperature. However, this method has a problem in that if the fixing point of the thermocouple shifts, the heat generation temperature of the heating element changes. That is, since heating control is not performed by directly measuring the temperature of the substrate, it is unknown even if the temperature of the substrate itself deviates from the target value. For this reason, the reproducibility of the substrate temperature and the temperature controllability were poor. [0009] The second method is to measure the intensity of infrared rays emitted from the substrate and convert it into temperature to obtain information on the substrate temperature. This is a method of controlling the power input to the heating element based on the temperature of the base itself measured by this method. However, with this method, not only the infrared rays emitted from the base, but also the direct infrared rays emitted from the heating element or the reflected indirect infrared rays enter the photodetector of the temperature measurement device, causing errors. let The infrared rays that cause these errors are
The intensity of the infrared rays is so strong that the infrared rays emitted by the substrate for temperature measurement are buried, causing the problem that it becomes impossible to measure the true temperature of the substrate and the measurement results become inaccurate. [0010] On the other hand, if a temperature distribution exists in the heated substrate, a distribution may occur in the physical properties of the film after film formation. For example, in the case of a magnetic disk disk, if a temperature distribution occurs within the disk, a difference will occur in the magnetic properties of the deposited magnetic film, and the magnetic disk disk -
Waviness occurs in the playback output. Furthermore, if a temperature distribution occurs within a pallet that holds a plurality of disk substrates for film formation, large variations may occur in the magnetic properties of the magnetic disk substrates formed within the same pallet. [0011] The purpose of the present invention is to solve the above-mentioned conventional problems, and its first purpose is to use an infrared camera, which is a temperature measuring instrument that can measure two-dimensional temperature distribution from infrared images,
The second purpose is to develop a temperature measurement device that can measure the temperature distribution even for a wide range of measurement objects (hereinafter referred to as "substrate") that cannot be photographed at once by this infrared camera. The purpose of the present invention is to provide a heating device equipped with the same, a fourth purpose is to provide a heating temperature control method, and a fifth purpose is to provide a film forming apparatus applying the same. [0012]

[Means to solve the problem]

In order to achieve the above object, a means for measuring the temperature distribution of a substrate having a wide area is required. To measure temperature over a wide area, there is a limit to the field of view of an infrared imaging device that can be captured in a single image, so the two-dimensional temperature image is divided into multiple areas and then measured. By combining and reproducing the obtained temperature image information, it becomes possible to measure the temperature distribution even over a wide range of measurement substrates. The means for synthesizing and reproducing the dividedly measured temperature image information can be performed using a well-known small computer or the like, and does not necessarily require a dedicated machine. [0013] Methods of dividing and measuring temperature images include a method of capturing a temperature image by moving an infrared camera with respect to a fixed base, a method of capturing a temperature image by fixing the camera and moving the measurement base, There is a method of capturing a temperature image by moving an infrared camera and a measurement substrate relative to each other. Furthermore, if the infrared camera is fixed and there is an optical system in the infrared light path that reflects and focuses the infrared rays with a lens, mirror, etc. to project an image on the infrared camera, the temperature image is divided while moving the optical system. There is also a way to measure. [0014] A heating device capable of heating a large-area heating substrate so that it exhibits a uniform temperature distribution by applying the above temperature distribution measurement method will be described below. There are various methods that are generally known as means for heating the substrate, such as electric heaters, electromagnetic heaters, and high-frequency heaters, but here we will use heat lamps, electric heaters, etc. as heating mechanisms. A heating device using an electric heater will be described. To obtain uniform temperature distribution over a large area of heating substrate,
Depending on the area that requires uniform temperature distribution, a plurality of heating mechanisms are arranged in an area equal to or larger than the area. At this time, the arrangement method needs to be in a direction where temperature distribution is likely to occur. These plurality of heating mechanisms each need to be a device whose output can be controlled independently. [0015] A heating device having such a heating mechanism and output control mechanism is
By setting the output control mechanism to increase the output in areas where the heating temperature of the heating substrate is low and to reduce the output in areas where the heating temperature of the heating substrate is high, the temperature distribution within the target range of the heating substrate can be made uniform. I can do it. Furthermore, using the above-mentioned infrared temperature image measurement device, the temperature distribution is detected from the measured two-dimensional temperature distribution image over a wide range, and the temperature distribution within the target range is made to be a predetermined uniform temperature distribution. It is also possible to create a device that automatically controls the output control mechanism. [0016] If the above-mentioned temperature distribution measuring means and heating device are provided in the vacuum thin film forming apparatus, the temperature distribution of the substrate on which the film is formed can be made uniform, so that the quality of the formed film can be made uniform. can. In other words, in this type of film forming apparatus, the temperature distribution of the substrate directly affects the uniformity of the formed film, so the film forming apparatus equipped with the means of the present invention improves the quality as described above. It is possible to realize uniform and excellent film formation. Further, the same applies to the heating device, and since it is possible to uniformly control the temperature of the substrate, the heat-treated substrate is uniform (because it is heated, the quality of the obtained treated substrate is uniform. ] Hereinafter, the means for achieving the object of the present invention will be explained in more detail. First, the first object of the present invention is to: (1) generate an infrared image by imaging infrared rays emitted from a heated substrate; A temperature measuring device comprising: an infrared imaging device that captures images; and means for measuring the temperature of the substrate by converting the infrared image into infrared temperature image information, the infrared imaging region of the substrate being divided into a plurality of locations. means for converting individual infrared image information temporally and spatially divided and imaged by the imaging device into infrared temperature image information, and sequentially accumulating the divided infrared temperature image information. and means for synthesizing the accumulated infrared temperature image information of the entire substrate to reproduce the temperature distribution of the entire substrate, an infrared temperature image measuring device comprising:
(2) A control system that temporally and spatially controls means for dividing the infrared imaging region of the base into a plurality of locations and imaging, and generating infrared temperature image information based on the divided infrared image information. The main controller includes means for accumulating successively converted temperature information, and means for synthesizing the accumulated infrared temperature image information of the entire substrate to reproduce the temperature distribution of the entire substrate. By the infrared temperature image measuring device according to (1) above, and (3) as a means for dividing the infrared imaging region of the base into a plurality of locations and capturing images, the base is moved in a certain direction;
The infrared temperature image measuring device according to (1) or (2) above, which is configured to partially divide the base body in synchronization with this movement and take infrared images multiple times with the infrared imaging device, also (4) As a means for dividing the infrared imaging area of the base into multiple locations and imaging,
The base body is moved in one direction, divided into elongated slits in a direction perpendicular to the direction of movement of the base body, and the infrared images are sequentially captured by the infrared imaging device multiple times in synchronization with the movement of the base body. The infrared temperature image measuring device described in (1) or (2) above is used as a means for dividing the infrared imaging region of the substrate into a plurality of locations to take images. It is configured to be movable within a range, and remains stationary while measuring an infrared image in one section, and is configured to divide and capture images multiple times while sequentially moving adjacent areas within the movable range. (1) or (2) above
By means of the infrared temperature image measuring device described and also (
6) Achieved by the infrared temperature image measuring device according to (2) above, which comprises an external storage device that sequentially stores the infrared temperature image information of the entire substrate that has been temporarily stored in the main control device. [0018] The second object is to (7) image infrared rays emitted from a heated substrate with an infrared imaging device, output the infrared image as a brightness signal, and convert this infrared image output into infrared temperature image information. A temperature measurement method for measuring the temperature of the substrate by dividing the infrared imaging region of the substrate into a plurality of locations, and capturing the individual infrared rays imaged by the imaging device in a temporally and spatially divided manner. The image output is converted into an infrared temperature image output, the divided and measured infrared temperature image outputs are sequentially accumulated, and the accumulated infrared temperature image outputs of the entire base are combined to obtain the temperature distribution of the entire base. This is accomplished by a regenerative infrared temperature image measurement method. [0019] The third object is as follows: (8) a heating mechanism disposed in a heating tank to face the substrate; infrared imaging for generating an infrared image by capturing infrared rays emitted from the substrate heated by the heating mechanism; a temperature measuring device comprising: a device; and means for converting the infrared image into infrared temperature image information to measure the temperature of the substrate;
A heating device comprising: a temperature control device for heating and controlling the temperature of the substrate based on the output from the temperature measuring device;
(3), (4) The infrared temperature image measuring device described in (5) or (6) is configured, and means for calculating the amount of deviation from a predetermined heating temperature distribution of the substrate set in advance, and the calculation output thereof. (9) A heating device comprising a temperature control means for converting the digital control signal generated in step ν) into an analog signal to control the temperature of the heating mechanism to an appropriate temperature distribution; 2) The main control device of the infrared temperature image measuring device described above includes means for calculating the amount of deviation from the predetermined heating temperature distribution of the substrate, and controlling the temperature control means based on the calculation output. The heating device according to (8) above, further comprising: means for generating a digital control signal;
(10) A plurality of independent heating mechanisms are arranged in the heating tank in the direction in which the temperature distribution of the substrate occurs, and the output of each of these heating mechanisms is independently controlled by the temperature control means to control the temperature distribution of the substrate. This is achieved by the heating device described in (8) above, which is configured to be able to set the heating temperature at a predetermined temperature distribution. [0020] The fourth object is to (11) heat a base body movably held in a heating tank with a heating mechanism, and image the infrared rays emitted from the heated base body with an infrared imaging device. outputting an infrared image as a brightness signal, converting the infrared image output into infrared temperature image information to measure the temperature of the substrate,
A temperature control method for heating a substrate in which the temperature of the substrate is controlled to a predetermined temperature based on the temperature output, the method of measuring the temperature of the substrate includes dividing an infrared imaging region of the substrate into a plurality of locations and capturing images; The individual infrared image outputs captured in temporal and spatial divisions are converted into infrared temperature image outputs, the divided and measured infrared temperature image outputs are sequentially accumulated, and the accumulated and measured infrared temperature image outputs are then measured. At the same time, the amount of deviation from a predetermined heating temperature distribution of the substrate is calculated, and a digital control signal generated based on the calculation output is converted into an analog signal to adjust the temperature of the heating mechanism to the appropriate setting. This is achieved by a method of controlling the substrate heating temperature by controlling the temperature distribution. [0021] The fifth object is: (12) a vacuum chamber, a means for evacuating the vacuum chamber,
A vacuum thin film forming apparatus having a means for forming a thin film by holding a substrate at a predetermined heating temperature on a sample stage (or sample holding means) in the vacuum chamber, and means for holding the substrate at a predetermined heating temperature. (8) (13) Vacuum film formation according to (12) above, in which the vacuum chamber is used as a sputtering processing chamber. (14) A preparation chamber, a heating chamber, a sputtering chamber, and a take-out chamber are each connected in series via a gate valve, and an exhaust system is connected to each of the chambers to independently exhaust each chamber. and means for inserting a plurality of pallet groups in which a plurality of substrates are held with both sides open, into the preparation chamber, and sequentially conveying the pallets to each of the heating chamber, sputtering chamber, and take-out chamber. (15) The vacuum film forming apparatus according to (12) above, wherein the heating chamber is configured with the heating device described in (8) above, and (15) the vacuum chamber is a CVD processing chamber. (16) The preparation chamber, the heating chamber, the CVD processing chamber, and the take-out chamber are each connected in series via a gate valve, and an exhaust system is connected to each of the chambers to independently evacuate each chamber. and means for inserting a plurality of pallets, each of which holds a plurality of substrates with both sides open, into the preparation chamber and sequentially conveying them to each of the heating chamber, sputtering chamber, and take-out chamber. This is achieved by a CVD film forming apparatus comprising: the heating chamber configured with the heating device described in (8) above. [0022] The vacuum film forming apparatus described in (12) to (16) above; A more preferable substrate temperature measurement method and substrate heating device when applied to a sputtering film forming apparatus and a CVD film forming apparatus will be described below.The method for measuring the temperature distribution of the substrate is as described above using an infrared imaging device (camera). ) is a simple method to capture an infrared image emitted by the base and convert it into a temperature image of the base.Also, by converting it into a temperature image, the temperature distribution is visible and easy to understand.At this time, the heating mechanism In order to avoid direct infrared light and reflected light emitted from the heater, an infrared camera is installed at a location away from the heater, and a shielding plate is used as necessary to prevent direct infrared light and reflected light from the heater. It is desirable to measure the temperature in a configuration in which reflected light does not enter the infrared camera.Furthermore, in order to image the substrate in the vacuum chamber, a window with high infrared transmittance such as Si coated with an anti-reflection film should be installed in the vacuum chamber. Installed in the duct provided in the temperature measurement section,
Furthermore, it is desirable that the inner wall of the vacuum chamber, including the inside of the duct serving as the infrared light path, be subjected to a black body treatment such as anodization to increase the emissivity so that infrared rays are absorbed rather than reflected by the inner wall. As a result, good infrared images and temperature images without any influence from the heater can be obtained, and the temperature distribution of the substrate can be measured with high accuracy. [0023] In addition, the heating device is composed of an assembly of individual heaters divided into a plurality of parts each having a function of independently controlling the temperature, and an infrared temperature measuring device is used to actually measure the temperature distribution of the entire base. Then, the temperature difference from the target set temperature value is calculated. Based on this calculation result, the heating control device controls the output of each heater according to the actually measured temperature distribution, and operates so that the entire base reaches the desired set temperature value. As a result, the temperature of the entire substrate is uniformly set to the desired constant temperature without any temperature distribution. [0024] These infrared temperature measuring means and heating control means are preferable as a heating device for a film forming apparatus, and are particularly suitable for an apparatus that forms a thin film on a relatively large substrate such as a magnetic disk by sputtering or the like. This allows the film deposition system to measure the temperature distribution of the substrate over a wide area.Especially in systems that perform continuous film deposition, the heater output is fed back to the next moving substrate based on this temperature distribution information. By performing the control, the temperature distribution of the substrate is uniform, and stable heating control is always possible. [0025]

[Effect]

About a device for measuring temperature images over a wide range, a method for measuring the same, a heating device applying the same, and a vacuum thin film forming device (film forming device) equipped with other heating devices.
The effects of the present invention will be explained in detail below with specific examples. [0026] (1) Device configuration FIG. 1 is a block diagram for explaining the basic configuration of a temperature measurement device, and is an example of a device that divides and measures a temperature image while moving the base of the object to be measured and an infrared camera. shows. A flat substrate 1, which is an object to be measured, is configured to be able to be transported and stopped in a certain direction (in this example, the direction of the arrow) by a transport system 2 under the control of a transport system control device 3. A duct 5 is installed at the tip of the infrared camera 4, and the infrared camera 4 is fixed to this. The infrared camera 4 and the duct 5 are further installed on a linear stage 6, and the infrared camera 4 and the duct 5 are moved to the base 1 by the linear stage 6 and the linear stage drive system 10.
It is a mechanism that can reciprocate in a direction perpendicular to the conveyance direction and parallel to the base. [0027] In this example, the duct 5 has an elongated shape in the direction perpendicular to the transport direction of the substrate 1, and therefore, the range of the image area that can be measured at one time also follows this, a, b, c, The range is within the frame surrounded by d. Since the image information measured by the infrared camera 4 is an infrared image, it is converted into temperature image information by the infrared camera control device 4-1. The infrared camera control device 4-1 has a function of displaying a temperature measurement image on the infrared camera monitor 4-2 and transmitting data in response to a request from the main control device 7 to transmit temperature image data. The main controller 7 includes a position detector 8 and a transport system controller 3.
The linear stage control device 11 receives the interrupt request of
, controls the infrared camera control device 4-1, synthesizes temperature image information that is partially measured and accumulated sequentially and temporally, outputs temperature composite image information to the monitor 7-1, and synthesizes the temperature image information. It has a function of storing the temperature image information obtained in the external storage device 7-2. [0028] (2) Temperature measurement procedure The temperature measurement procedure using this device will be explained below. Base 1
A marker 9 indicating the position of the temperature measurement range is attached to the sensor 8-1 of the position detector 8, and the measurement is started. The method of transporting the substrate 1 includes step transport in which it is transported intermittently over a length corresponding to the temperature measurement range in the transport direction, and constant speed transport in which it is transported at a constant speed. Although measurement is possible in either case, the following two examples will be explained here. [0029] (2) Example of Step Conveyance A method of measuring while performing step conveyance is shown in the flowchart of FIG. The transport system control device 3 transports the substrate 1 periodically and intermittently at equal intervals. When the position detector 8 detects the marker 9 on the substrate, the main controller 7 allows an interrupt from the transport system controller 3 that occurs at the end of step transport, and immediately controls the infrared camera 4 and duct 5 by the linear stage drive system 10. to the measurement position and measure the temperature image. The infrared camera control device 4-1 transfers the temperature image data to the main control device 7. After that, the main controller 7
Immediately move the infrared camera 4 and duct 5 to the next measurement position, measure the temperature image information, and have the data transferred. This is repeated P times while the conveyance is stopped, and the substrate 1 is
Wait until the item is transported one step. Thereafter, the conveyance system control device 3 controls the conveyance system 2, and after the substrate 1 is conveyed by one step along the distance between a and b and stopped at -, the main control device 7
Generates an interrupt for. Then, temperature images are measured P times while moving the infrared camera and the duct in the same manner. [0030] The above procedure is repeated Q times to measure the temperature distribution in the target measurement range. At this time, the main controller 7 sequentially combines the transferred temperature image information as shown on the monitor screen in FIG. In other words, the two-dimensional temperature image information d (y, x) obtained in one measurement is stored in the data array (y,
A single temperature composite image is created while rearranging to the position x). The measurement range at this time is Q・(distance between a and b)
P.(distance between b and c). When the measurement of the target range is completed, interrupts from the transport system control device 3 are prohibited, and
The combined data is stored in the external storage device 7-2. Then, it enters a state of waiting for measurement of the next substrate. [0031] ■Example of constant speed conveyance Next, the measurement method of conveying the substrate 1 at a constant speed is to use an infrared camera 4.
A case will be described in which measurement is carried out while only the substrate 1 is being transported without being moved. A method of measuring while conveying at a constant speed is shown in the flowchart of FIG. In the measurement method of constant speed transport, once the measurement position is detected by the position detector 8, the transport speed V of the substrate 1 and the measurement field of view a are
The time t required to transport W is calculated from the distance W between -b and a timer interrupt is set at intervals of seconds. Immediately thereafter, the first temperature image is measured, the data is transferred, and the temperature image data is rearranged in the main controller 7. Thereafter, a timer interrupt occurs every t seconds, and each time the a-b-c-d imaging field of view is measured, data is transferred, and the main controller 7 synthesizes a temperature image. After acquiring Q times of data in the target measurement range, timer interrupts are disabled, and the combined image display and image data are stored in the external storage device 7-2. Then, it enters a state of waiting for measurement of the next substrate. In other words, 1
Two-dimensional temperature image data d (y, 1) obtained from two measurements
are rearranged at the position of the data array (y, 1) in the main controller 7, and a single temperature composite image is created while iterating. The measurement range at this time is Q.(distance between a and b) x (distance between b and C). [0032] (3) Application example to a heating device An example of a heating device that uses the above infrared temperature measuring device to detect the temperature distribution in the heating area and individually control the output of the heating device to achieve a uniform temperature distribution. is shown in Figure 5. That is, FIG. 5(a) shows a partially sectional front view, and FIG. 5(b) shows a partially sectional side view. This is an example of the main part configuration of a heating device in which a temperature measuring device (camera 4 and duct 5 are fixed) and a heating mechanism (heater) 13 are added. Moreover, FIG. 6 shows the entire control system that controls the heating mechanism 13 in the heating device based on temperature measurement. [0033] The method of combining temperature image information measured by dividing the substrate 1 being transported into one image is as described above. In the main controller 7, based on the synthesized temperature image information,
Detects temperature distribution from the set temperature and measured temperature image. The heating mechanisms 13 in the heating tank 12 each have a heating control device 14 so that temperature can be controlled individually. Then, based on the temperature distribution of the substrate detected by the main controller 7, the output to each heating mechanism 13 is calculated according to the difference from the heating set temperature set to a predetermined value, and control data is generated. In other words, a digital signal for temperature control is generated. D / A (D 1g1tal / Analogue
e) The converter 15 generates an analog signal for the heating control device 14 for each heating control device. The heating control device 14 drives the heating mechanism 13 with an output proportional to this analog signal to heat the substrate 1. Therefore, the currently heated substrate is heated by the output of each heating mechanism that has been corrected to reduce the temperature distribution based on the temperature distribution information of the previously heated substrate, so that the substrate 1 can be uniformly heated. Heating becomes possible. [0034] (4) Example of Application to Vacuum Thin Film Forming Apparatus (Film Forming Apparatus) How the present invention works will be explained using the sputtering apparatus diagram of FIG. 15, which will be explained in detail in the later examples. Figure (a)
(a) shows a cross-sectional plan view, and (a) shows a vertical cross-sectional front view. The configuration of this device is a preparation chamber 19, a heating chamber 20
A heating tank 12 having a temperature measurement chamber 30 and a sputtering chamber 2
1. It is a continuous film forming apparatus in which take-out chambers 22 are linearly connected, each chamber is partitioned by a gate valve 23, and has an independent exhaust system 24. In this example, the sputtering chamber 21 is 21-1.21 so that a multilayer film can be continuously formed.
It is partitioned into three chambers -2, 21-3, and can simultaneously form films of different materials on both sides. The substrate 17 is
It is attached to a holder called a pallet 18 that holds a plurality of substrates. The preparation chamber 19 and the take-out chamber 22 can stock a plurality of pallets 18, and during film formation, they are continuously carried out from the preparation chamber 19, and have an apparatus configuration that allows heating and film formation. [0035] FIG. 16(a) is a sectional view of the main part of the heating tank 12 extracted from FIG. 15. As shown in the figure, the heating tank 12 is connected to the heating chamber 2.
0 and a temperature measurement chamber 30. The pallet 18 is
It is heated in the heating chamber 20 while being moved at a constant speed by the conveyance system 2 . Thereafter, by passing in front of the temperature measurement chamber 30, the pallet 18 is detected by the sensor 8-1 (see FIG. 15(b)), and measurement is started. The setting position of the temperature measurement chamber 30 with respect to the position of the heater 13 is
3, a slit-shaped partition plate 29 is connected to the heating chamber 2.
0 and the temperature measurement chamber 30. This slit-shaped partition plate 29 is for preventing infrared rays from the heater 13 from entering the temperature measurement chamber 30. Furthermore, it is desirable to roughen the inner wall of the temperature measurement chamber 30, including the inside of the vacuum duct 5 and the partition plate 29, and to perform black body treatment (for example, by anodizing), thereby increasing the emissivity of the inner wall and increasing the reflected infrared light It is possible to reduce measurement errors based on By adopting such a preferable configuration,
When measuring the temperature of the substrate, it is not affected by direct light or reflected light from the heater 13, so it is possible to accurately measure the temperature distribution of the substrate. [0036] FIG. 16(b) is an enlarged longitudinal cross section of the AA' cross section in FIG. 16(a). The vacuum duct 5 is connected to a vacuum tank (heating tank 1
2), forming a part of the thermometer side chamber 30, and the inside thereof is evacuated to a high vacuum like the heating chamber 20. The infrared window 31 for taking an infrared image is made of a Si material coated with an antireflection film that transmits 3 to 5 μm, a wavelength to which the infrared detection system is sensitive. At this time, since the inside of the vacuum duct 5 is in a high vacuum, even if the distance from the pallet 18 to the infrared camera 4 is long, there is no effect of air convection or absorption by water vapor, and a good temperature distribution image can be obtained, resulting in measurement accuracy. will improve. [0037] A control system that performs heating control using the heating chamber section 20 and temperature measurement chamber 30 shown in FIG. 15 is shown in FIGS. 17 and 18. The method of synthesizing the temperature image of the pallet 18 being transported is based on the view range of the vacuum duct 5 (the range surrounded by a, b, c, and d in FIG. 18) as a temperature measurement range that can measure - degrees. The measurements are carried out sequentially and periodically while timing the measurements in synchronization with the speed V. The timing at this time is the time required to convey the distance between a and b (a
-b distance)/V seconds. It is converted into an image once and sent to the main control device 7, and the main control device holds it. The temperature image data obtained at the next measurement timing is transferred to the main controller 7, where the two temperature image data are combined. Furthermore, the temperature image of the pallet measured at the next measurement timing and the temperature image data measured so far are combined. [0038] In this way, by sequentially capturing partial temperature distribution images of the substrate (pallet 18) and composing the images, it is possible to obtain an entire temperature distribution image even for a wide range of substrates that cannot be measured in one image capture. Obtainable. And FIGS. 19(a) and (b)
As shown in FIG. 3, temperature distribution images are displayed in color in real time on the screen displayed on the monitor 7-1 of the main control device 7 in the order in which the temperature images are synthesized. The temperature distribution image is shown in the same figure (a).
As shown in screen (1), the temperature is displayed in 16 levels, and each level is displayed in different colors. At this time, the temperature distribution was made easier to understand both visually and sensually by using different colors, such as warmer colors for higher temperatures and cooler colors for lower temperatures. In addition to this, on the screen (2)
As shown in (3), (4), and (5), heater information such as target temperature, set temperature of each heater, output current value of heater, temperature at specified point, difference from target value, and substrate temperature. By displaying temperature distribution information such as changes in temperature at the same time, it is easier to understand visually. Also, in the screen (6) (7) of the same figure (b)
) As shown in (8), we have also prepared a display method that allows you to simultaneously understand changes in the substrate average temperature and the changes in the temperature at each measurement point between pallets. [0039] As shown in FIGS. 17 and 18, each of the heaters 13 has a heating control device 14 so that the temperature can be controlled individually. A thermocouple 33 for measuring the temperature of the heater is attached near the heating element, and the heating control device 14 performs feedback control of the heat generation temperature using the output of the thermocouple 33 with respect to the target set value. The main controller 7 calculates the temperature distribution based on the set temperature and the synthesized temperature image, calculates the heat generation temperature of the heating element set value of each heater according to the difference from the heating set temperature, and controls the control data. generate. Since the temperature image data and the temperature distribution data are digitally processed, the calculated control data becomes a digital signal. D / A (D 1g1tal / Analogue
e) The converter 15 interprets the control code sent by the main controller 7 and generates an analog signal of the temperature setting value and a heating heater ON/OFF signal to each heating controller 14. The heating control device 14 drives the heater 13 to heat the pallet 18 in accordance with the magnitude of this set value. Therefore, since the currently heated substrate is heated by the output of each heater 13 whose temperature distribution is corrected based on the temperature distribution information of the previously heated substrate, a uniform pallet is generated. 18 heating becomes possible. [0040]

【Example】

An embodiment of the present invention will be described below with reference to the drawings. <Example 1> This example relates to a temperature measuring method and a temperature measuring device, and first the general implementation situation will be explained. In other words, the temperature measurement area, which is a feature of the present invention, is divided into multiple locations to measure temperature images, these individual temperature images are accumulated, and when the entire measurement is completed, they are combined into a single temperature image. It also proposes several examples of methods and means for reproducing. For example, there is a method in which a fixed infrared camera scans the substrate to be measured in the X and Y directions, a method in which the infrared camera scans in the X and Y directions relative to a fixed substrate, and a method in which the substrate is moved in one direction. However, there is a method of synthesizing temperature images by scanning an infrared camera in a direction parallel to and perpendicular to the substrate with respect to the direction of movement of the substrate, or a method of fixing the infrared camera and installing a lens, mirror, etc. in the infrared light path. This method uses an optical system that reflects and condenses light and guides the image to an infrared camera, and measures the divided temperature images while moving this optical system or driving a mirror. [0041] In this example, first, an example of an apparatus is described in which a temperature image is synthesized by scanning an infrared camera in a direction parallel to the base body and perpendicular to the base body with respect to the base body movement direction while moving the base body in one direction. show. Since an infrared camera is a device that captures two-dimensional infrared images, many methods can be selected for dividing the measurement range. As shown in a block diagram schematically showing the basic configuration of the entire apparatus in FIG. 1, a cylindrical structure called a duct 5 having a rectangular opening was provided in front of the light receiving section of the infrared camera 4. The duct 5 is a structure that blocks so-called stray light in order to reduce infrared scattered light other than infrared rays emitted from the base 1 that is the object to be measured. Therefore, the infrared image area that can be imaged at -degrees is limited to the field of view through the duct 5. [0042] In this example, the duct has a rectangular opening due to the equipment in which the temperature measurement device is installed, but the shape of the base body that is the object to be measured and the division of the measurement range (area) Various shapes can be selected depending on the method and the environment in which the temperature measuring device is installed. Since it is desirable that the measurement device and its system be small, the distance from the front of the lens of the infrared camera 4 to the surface of the substrate 1 is usually about 20 cm to 120 cm, and the field of view of the infrared camera 4 is approximately 20 cm to 120 cm. It is desirable to set the angle to 120 degrees or less so that distortion does not become a problem. The functions of each part of the infrared temperature image measurement device shown in Figure 1 are as follows.
It is as follows. The infrared camera 4 is attached with an argon cylinder 16 because it is necessary to cool the image pickup element using adiabatic expansion of argon. The infrared camera 4 used in this embodiment has the ability to convert infrared intensity into a 16-gradation temperature table. Therefore, by setting the minimum temperature of the temperature table, the temperature width of one gradation, and the emissivity of the measurement target, the captured infrared image was converted to a temperature level set in 16 gradations, and this was displayed in color. Temperature images can be obtained. [00433 The infrared camera 4 has 256x200 pixels on one screen, and the temperature of each pixel at these points can be known. Further, data of only a specified range of the captured temperature image can be transferred to the main controller 7. A linear stage drive system 10 including a servo motor, an encoder, and a brake is connected to the linear stage 6.
Positioning, speed,
The structure is such that acceleration etc. are controlled. Main control device 7
The infrared camera 4 and the duct 5 are moved to the specified position by transmitting position data from the infrared camera 4 to the linear stage control device 11. A marker 9 indicating a measurement position 1 is provided on the base 1, and when the position detector 8 detects this via the sensor 8-1, measurement is started. The main control device 7 of the temperature measuring device controls the conveying system 2, and the temperature can be measured even when the substrate 1 is conveyed in steps or continuously at a constant speed. [0044] Next, three examples of temperature measurement methods based on different transportation methods of the substrate 1 will be shown, and items that are limited by the measurement methods will be shown. (1) When the main controller 7 of the temperature measuring device controls the transport mechanism to transport the substrate 1 step by step, the main controller 7 controls the transport system controller 1 after measuring the temperature distribution in one section. A command to perform step transport is issued, and when one step transport is completed, the main controller 7 again starts measuring the temperature distribution in the next adjacent section. This method is repeated multiple times to measure the temperature of the entire target measurement area. This method is
The conveyance speed of the substrate depends on the time required for measurement by the main controller 7. Therefore, it is not possible to transport at intervals shorter than the time required for measurement. In addition, the width in the conveying direction (a-
b) must be the same width as the step conveyance width. (2) If the transport mechanism is independent and the transport system control device is transporting the substrate 1 in steps, the temperature measurement in the direction perpendicular to the transport direction of the substrate is performed while the substrate 1 is stopped. All must be finished. Further, the width in the conveyance direction (between a and b) measured at - degrees needs to be the same as the width of step conveyance. (3) If the transport mechanism is independent and the transport system control device is transporting the substrate 1 at a constant speed, the main controller 7 must control the measurement interval in accordance with the transport speed of the substrate 1. . [0045] That is, one measurement must be completed while the substrate 1 is being transported (between a and b). Furthermore, the measurement in the direction perpendicular to the transport direction of the substrate is limited to one time. This is because the substrate 1 is being transported even while the infrared camera 4 and the duct 5 are being moved to take measurements, so a completely synthesized temperature image cannot be obtained. The measurement is limited by the time t required for measurement, the measurement width (a-b) W in the transport direction, and the transport speed V. In other words, the condition must be satisfied that t≦w/v. [0046] <Example 2> In this example, the conveyance mechanism is independent, and an example of actual temperature measurement in which the temperature is measured by conveying the base 1 in steps is shown using FIGS. 1 and 2. First, the main controller 7 was programmed to perform measurements according to the procedure shown in the flowchart of FIG. The size of the base 1 is 1200 mm in width.
It is a flat plate of a metal base material with a length of 900 mm and an emissivity of 0.3. The range of the substrate that the temperature measuring device can measure at one time is 68 mm5 between a-bS d-c.
The range between b-c and a-d is 560 mm. This substrate 1 is a substrate that has been heated while being conveyed in steps under the control of the conveyance system control device 3. The conveyance cycle was a sequence in which each step was 68 mm and stopped for 12 seconds. Therefore, in order to measure this substrate, the temperature distribution of almost the entire substrate 1 can be measured by measuring twice in the width direction and 13 times in the length direction (transfer direction). In other words, P= in Figure 2
2. Q=13. When the position detector 8 detects the marker 9 via the sensor 8-1, the main controller 7 generates an interrupt to the main controller 7, and the main controller enters a measurement routine. The time required for measurement is less than 1 second for measurement and data transfer, about 3 seconds for moving the infrared camera 4 and duct 5, and about 4 seconds for combining and displaying images. Complete location measurements. [0047] The temperature image is synthesized as shown on the monitor screen in FIG. A composite image was displayed on the screen, making it possible to visually check the temperature distribution. and,
After the measurement for one substrate is completed, the temperature image data for one substrate temporarily stored in the main controller 7 is saved in the external storage device 7-2, and the next new substrate is measured. Then, the machine waits for detection of the marker on the substrate that is being conveyed step by step again. Figure 7 shows the results of measuring the temperature distribution of the substrate 1 in this way.
Shown below. Although it is displayed in color on the monitor 7-2, FIG.
is shown as a temperature contour map. It can be seen from this that the temperature on both sides of the substrate 1 is about 20 to 45 degrees Celsius lower than the center. [0048] <Example 3> Next, an example in which the transport mechanism is independent and the temperature is measured by transporting the substrate at a constant speed will be described. The main controller 7 was programmed to carry out the measurement according to the procedure shown in the flowchart of FIG. The size of the base 1 is a flat plate of a metal base material with a width of 600 mm and a length of 900 mm, and the emissivity of the base is 0.3. The range of the substrate that the temperature measuring device can measure at one time is 68 mm between a-b and d-c, and 560 mm between b-c and ad. The configuration of the temperature measuring device is the same as in the second embodiment. This base 1 is a base that has been heated while being transported at a constant speed under the control of the transport system control device 3. The conveyance speed was 18 cm/min. Therefore, in order to measure this substrate, it is necessary to measure it once in the width direction and once in the length direction (transfer direction) because it is conveyed at a constant speed as mentioned earlier.
By performing measurements 13 times every 22.67 seconds, it is possible to measure almost the entire temperature distribution of the substrate 1. [0049] That is, Q=13, w=68, ■=18, t=2 in FIG.
It is 2.67. When the position detector 8 detects the marker 9 via the sensor 8-1, the main controller 7 generates an interrupt to the main controller 7, and the main controller 7 enters a measurement routine. The time required for measurement is less than 1 second for measurement and data transfer, and about 4 seconds for displaying a composite image, and the condition t≦w/v is satisfied in a period of 22.67 seconds. The synthesis of temperature images is as shown in Figure 3, and from d (1, 1) to d (
The data of the 13 measurements up to 13.1) were sequentially synthesized, and the synthesized image was displayed on the monitor 7-1 so that the temperature distribution could be visually recognized. Then, as in Example 3, after the measurement for one substrate is completed, the accumulated temperature image data for this one substrate is stored in the external storage device 7-2, and preparations are made for measuring the next new substrate. Then, the machine waits again for detection of the marker on the substrate being transported. In this way, the base 1
The results of measuring the temperature distribution of the substrate were similar to those shown in FIG.
It was found that the temperature was 25℃ lower than ℃. [0050] <Example 4> This example describes a heating device that measures the substrate temperature with the temperature measuring device of the above example, controls the heating mechanism based on this measurement result, and realizes uniform heating. This is an example. When heating a large area heating substrate, the temperature distribution of the heating substrate becomes a problem. Therefore, in the present invention, by installing a plurality of heating mechanisms independently according to the direction in which the temperature distribution occurs and controlling the output of each of these heating mechanisms independently, a uniformly heated heating substrate can be obtained. It was designed so that [0051] FIG. 5 shows an outline of this heating device. Figures 5(a) and (b)
) are a partially sectional front view and a partially sectional side view, respectively, as previously described. The configuration of the heating device is that a heating mechanism 13 and a transport system 2 for transporting a substrate 1, which is an object to be heated, are installed in a heating tank 12, and a transport system control device 3 for controlling the transport system and each heating mechanism are installed outside. It is equipped with a heating control device 14 that controls the output. Furthermore, the heating tank 12 has a size that surrounds one metal base material 1 having a width of 720 mm, a length of 600 mm, and a thickness of 5 mm, and is equipped with the duct 5 of the infrared temperature measuring device described in Example 1 on one side. There is. The heating mechanism 13 in the heating tank 12 used a heating lamp type heater, and five heaters of 2 kW each were installed on each side, for a total of 10 heaters. [0052] The substrate 1 is conveyed while being held by the upper and lower conveyance systems 2, and is heated from both sides in the heating tank 12. Then, an infrared camera 4 and a duct 5 were installed on one side near the exit of the heating tank 12, and the temperature distribution of the heated substrate was measured using the temperature measuring device described in Example 1. The infrared camera and the duct are fixed to the heating tank 12 because it is not necessary to move the infrared camera and the duct in a direction orthogonal to the conveyance direction for measurement due to the measurement range. The duct 5 has an elongated slit-shaped opening in a direction perpendicular to the conveyance direction of the substrate 1, and is divided into sections according to the width of the slit to measure a temperature image.
A composite temperature distribution image for one substrate was obtained. Here, the range in which the temperature image of the substrate can be measured at one time from the slit-shaped opening is 62 mm x 640 mm. As shown in FIG. 7, the direction in which the temperature distribution of the substrate occurs is as follows:
It occurs in a direction perpendicular to the conveyance direction, and the temperature at both ends tends to be low. Therefore, the method of installing the heaters 13 was to arrange five heaters in a direction perpendicular to the conveyance direction of the substrate. The positions where the heaters 13 are placed are one at the center of the vertical width of the base body of 720 mm, and one heater 13 at a distance of 160 mm from the center.
A total of five wires were installed on one side, one each separated by 320 mm above and below the center, and one each separated by 320 mm above and below the center. This is the same on both sides. [0053] Then, the substrate 1 is heated so that the temperature distribution is improved under the following conditions.
was heated and the temperature distribution was measured. The emissivity of the base 1 is 0.
03 The substrate conveyance speed is constant speed conveyance of 18 cm/min, and the heating control device 14 performs heating by controlling the heater current.
From the top of 2, number the heaters in order from No. 1 to No.
5, each set current value is No. 1=4.2A, No, 2=3.5A, No, v3=3.
5A, No, 4=3.8ANo, 5=4.6A. This is the same current value on both sides. The heated substrate 1 was passed through the duct 5 and the temperature distribution was measured with an infrared camera 4. The measurement method was as described in Example 3. The results are shown in FIG. From this, as shown in Figure 7, when comparing the temperature distribution of the substrate heated with a heating device that does not take into account the occurrence of temperature distribution with the example measured with the temperature measuring device of Example 1, the temperature distribution of the substrate is clearly It can be seen that it has been improved. [0054] <Example 5> Next, using the heating device and temperature measuring device described in the above example, the main controller 7 of the temperature measuring device controls the heating control device 14 so that the temperature distribution of the substrate becomes uniform. An example of a heating device configured to be able to control the output is shown below. FIG. 6 shows the configuration of the heating temperature control system in the entire device. In the illustrated device configuration, the transport system 2 is independent from the main controller 7 and transports the substrate 1 at a constant speed. The temperature distribution of the substrate 1 detected by the main controller 7 calculates the output to each heater 13 according to the difference from a predetermined heating setting temperature, and generates control data (generates a digital control signal). and sends it to the D/A converter 15. D/A converter 1
5 generates an analog signal having a magnitude based on the control data for each heating control device 14. Heating control device 1
4 heated the substrate 1 by driving the heater 13 with an output proportional to the analog signal from the D/A converter. Therefore, the substrate currently being heated is heated by the individual heater output corrected to reduce the temperature distribution based on the temperature distribution information of the previously heated substrate, so uniform heating of the substrate is possible. becomes. [0055] FIG. 9 shows an example of a temperature distribution detection method and a heating control method in the main controller 7. Both methods were controlled by a program given to the main controller 7. The procedure is shown below. FIG. 9(a) is a diagram showing the temperature distribution of the substrate heated without controlling the output of the heater 13 in equal order. This two-dimensional image data is stored in a data array of the main controller 7. In the main controller 7, from this arrangement to the rear of the base (
The temperature distribution of the α-α' line (rearward with respect to the conveyance direction) is determined [the diagram shown in FIG. 9(b)]. [0056] Then, the average temperature within the section corresponding to the position where the heater 13 is installed is determined. In this embodiment, as shown in FIG. 9(b), positions a-b, b-c, c-d, d-e, e, and −
Determine the interval f, and let the respective sections be A, B, C, D, and E. Once the average temperature from section A to E has been determined, compare it with the set temperature of 200°C to determine the difference. According to this difference, the main control device 7 calculates the output corresponding to each heating control device 14 and transmits the data to the D/A converter 15. [0057] Through the above processing, a corrected heater output that provides a uniform heating temperature distribution can be obtained. The reason why the temperature distribution along the α-α' line is determined in the process of detecting the temperature distribution is that the temperature distribution must be determined in the same direction as the installation direction of the heater 13, which can be independently controlled. The reason for determining the temperature distribution at the rear of the substrate in the transport direction is that the substrates are continuously transported to the heating device. It's heated. Therefore, when the main controller 7 finishes measuring the temperature distribution and resets the output to the heater 13, the temperature distribution only at the rear of the base body is improved. For this reason, the temperature distribution behind the base was detected. [0058] As a result of heating control using the above control system, the temperature distribution was improved as in FIG. 8 . FIG. 7 shows an example in which the temperature distribution of the substrate was measured using the temperature measuring device of Example 1 when it was heated by a heating device that did not take into account the occurrence of temperature distribution. It can be seen from both figures that the main controller 7 operates to automatically reduce (improve) the temperature distribution of the substrate. Note that safety measures are required to prevent runaway heating due to malfunction of the main controller 7. In this embodiment, heating runaway was prevented by setting the upper limit of the heating current on the circuit of the heating control device 14, and by defining the upper limit of the control current and the control current range in the program of the main controller. [0059] <Example 6> This example is an example in which the infrared temperature measuring device, its measurement method, heating device, and heating temperature control method of Examples 1 to 5 above are applied to a vacuum film forming apparatus. . Various methods have been put into practical use for forming thin films in vacuum. In either case, the temperature of the substrate is an important parameter for forming a thin film. Particularly when forming a homogeneous film over a large area, the temperature distribution of the substrate on which the film is formed becomes a problem. This example shows an example in which the heating temperature control method of the present invention is applied to a vacuum thin film forming apparatus using a sputtering film forming method. [0060] The sputtering apparatus used in this example is a film forming apparatus for a sputtered magnetic disk as shown in FIG. In addition, Figure 1
0(a) and FIG. 10(b) respectively show a cross-sectional plan view and a vertical cross-sectional front view of this film forming apparatus. The configuration of this apparatus is roughly divided into four chambers: a preparation chamber 19, a heating tank 12 (including a heating chamber 20 and a thermometer side chamber 30), a sputtering chamber 21, and a take-out chamber 22. Each of these chambers is connected in series to each other via a gate valve 23, and an exhaust system 24 is provided in each chamber so that each chamber can be independently maintained at a predetermined degree of vacuum. A preheater 19' is provided in the preparation chamber 19 so that a plurality of sulbarets 18, which will be described later, can be stored therein. [0061] Further, the heating chamber 20 is configured by applying the heating devices of Examples 4 and 5 above, and a temperature measuring device is provided on the wall surface of the heating tank 12 that constitutes a part of the thermometer side chamber 30. However, only the duct 5 and camera 4 are shown in this figure.
Other parts are omitted. In this example, the sputtering chamber 21 has a slit 2 to perform three types of sputtering.
It is divided into three chambers 21-1 to 21-3 via 1'. Each of these rooms contains targets 25-1 to 25-1.
25-3 is arranged. Further, the take-out chamber 22 is configured such that the pallets 18 that have been sputtered one after another in the sputtering chamber 21 are sequentially arranged and stored. [0062] In addition, these preparation chamber 19, heating tank 12 (heating chamber 20 and temperature measurement chamber 30), sputtering chamber 21 and take-out chamber 22
A transport system 2 for sequentially transporting pallets 18 is disposed in the four rooms. In this device, a board 17 for a 5.25-inch magnetic disk (hereinafter simply referred to as a board) is
There is a plate-shaped substrate holder called a pallet 18 that can hold one board and both sides open, and by attaching a board 17 to this, it is possible to load a plurality of pallets 18 into the vacuum chamber at the same time. . Note that the size of the pallet 18 is 720 mm in width (height) and 600 mm in length in the conveyance direction. [0063] As mentioned above, the vacuum chamber has four consecutive chambers: the preparation chamber 19, the heating chamber 12, the sputtering chamber 21, and the take-out chamber 22.
Each vacuum chamber is separated by a gate valve 23, and these can be evacuated to a high vacuum by an independent vacuum exhaust system 24. In addition, in the sputtering chamber 21, three different types of targeters 25-1 to 25-3 are installed separately so that multilayer films can be formed, so that films can be formed on both sides of the substrate at the same time. It has become. The pallets 18 are transported one by one from the preparation chamber 19 by the transport system 2, and are sequentially transferred to the heating chamber 2.
0, a film is formed through the sputtering chamber 21 and stored in the take-out chamber 22. [0064] This apparatus is a so-called in-line sputtering apparatus in which the substrates 17 can be replaced continuously without releasing the vacuum in the sputtering chamber 21. In addition, an in-line sputtering apparatus using a single pallet wafer method has also been put into practical use, and it goes without saying that the present invention can also be applied to such an apparatus. This equipment forms a film by carrying out processes such as evacuation, heating, film formation, and atmospheric pressure leak in individual vacuum chambers for individual pallets while transporting them. A single-wafer in-line sputtering apparatus will be described in a later embodiment. [0065] Here, the heating chamber 20 is as described above in Example 4 and Example 5.
It has the same function and structure as the heating device described in 1. Five heaters 13 are installed on each side in a direction perpendicular to the conveyance direction of the pallet 18. In addition, the heating tank 12
is a vacuum chamber compatible with high vacuum. In addition, the duct 5 for infrared temperature measurement attached to the heating tank has a structure with an elongated slit-shaped measurement opening in the direction perpendicular to the pallet transport direction, and is designed for vacuum use with no leakage and withstand pressure. It is a duct. Further, the duct 5 was provided with a silicon window with an anti-reflection film that transmitted infrared rays, and the infrared camera 4 imaged the infrared rays that passed through this window and measured the temperature. Note that sapphire and germanium with an anti-reflection coating can also be used as the window material. The width of the field of view that can be measured at one time through the duct is 55 mm on the short side and 650 mm on the long side on the pallet 18. Other mechanisms include control devices such as an infrared camera control device 4-1, a main control device 7, a position detector 8, and a heating control device 14.
It has the same functions as the devices shown in Examples 4 and 5. Further, the transport system 2 is independent from the main controller 7,
The pallet 18 was conveyed at a constant speed to perform heating and film formation. [0066] An example of actual film formation using this sputtering apparatus will be described below. In the film forming method, first, a 5.25-inch substrate 1 is placed on a pallet 18.
7 is attached, and a plurality of sheets are loaded into the preparation chamber 19. After evacuation, all the gate valves 23 are opened, and power is applied to the heater in the heating chamber 20 and the target 25 in the sputtering chamber 21 to perform heating and discharge. Thereafter, the conveyance system 2 is driven to convey the pallets 18 one by one. The transport system 2 performed constant speed transport at a transport speed of 18 cm/min. The pallet 18, which is being transported at a constant speed, is heated in the heating chamber 20, and then the temperature distribution between the substrate 17 and the pallet 18 is measured in the thermometer side chamber 30, after which a multilayer film is formed and taken out. Chamber [0067] The method of measuring the temperature distribution of the pallet 18 and the substrate 17 and the method of controlling the output of the heating device are the same as the measuring method and heating control method of the second embodiment. However, in adapting to the sputtering apparatus, some changes were made to the program given to the main controller 7. First, a function has been added so that it is possible to specify which pallet to measure among the pallets 18 that are continuously transported. The position detector 8 attached below the duct 5 is an infrared transmission type position sensor, and measurement starts when the pallet 18 crosses this sensor light. In addition, the pallet is provided with a function of notching to serve as a marker 9, counting the number of pallets 18 that have passed, and starting measurement when the specified pallet 18 is reached. [0068] Furthermore, the program measures the plurality of measurement objects with different emissivities existing on the pallet 18 while sequentially setting the emissivity, and determines the temperature distribution for each of the measurement objects with different emissivities. Made it possible to measure. Since the objects whose temperature is to be measured are made of different materials and have different surfaces, such as the pallet 18 and the substrate 17, the emissivity of the two is greatly different. For example, when the emissivity of the substrate 17 and the pallet 18 was measured, the emissivity of the substrate 17 was 0.19, and that of the pallet 18 was 0.32. Therefore, if the emissivity at the time of measurement is adjusted to that of the substrate 17, then the other target, pallet 1,
A problem arises in that it is not possible to measure 8. So board 1
After measuring the temperature image by setting the emissivity to 7, the emissivity is further set to the emissivity of the pallet 18 and measuring the temperature image. Thereafter, the temperature distribution of the entire pallet 18 including the substrate 17 was measured by recombining the temperature composite diagram of only the pallet 18 and the temperature composite diagram of only the substrate 17 from the temperature image data of both. [0069] In this example, the emissivity was set and measured twice for two types of measurement objects existing in the measurement area, and the results were combined into an image. Measurements can be made in the same way even when However, if there are many types of measurement targets, measurement may take time and image composition may become complicated. In this way, the substrate 17
The substrate was heated before film formation while being transported, and the substrate temperature and temperature distribution were measured. The results are shown below. First, in the case of a comparative example in which the heating device of the present invention adapted to a sputtering device does not perform heater output control to improve temperature distribution, all the heater currents input to the individual heaters 3 of the heating device are kept constant and the pallet 18 Heating and conveyance was carried out. The heater current was set to 3.5 A for all heaters, and the temperature distribution of the heated pallet 18 and substrate 17 at this time was measured. [00701 The results are shown in FIG. The contour diagram in this figure is a temperature distribution diagram that is a composite of the temperature distribution diagram of the pallet 18 and the temperature distribution diagram of the substrate 17. From the figure, the temperature distribution was low at the top and bottom of the pallet, and high at the center. Board 1
The temperature of No. 7 was also high in the middle row and about 25°C lower in the lower row. [0071] <Example 7> Next, an example will be shown in which the main controller 7 heated the pallet 18 and the substrate 17 while controlling the output of each heater 13 so that the temperature distribution was uniform to form a film. . As in Example 6, a film was formed on a substrate using the sputtering apparatus shown in FIG. In controlling the heating output, the temperature distribution detection method and control method are as shown in FIG. 9 of Example 5. In other words, the main controller 7 controls the heated pallet 1
The temperature distribution is detected from the results of measuring the temperature distribution of the substrate 8 and the substrate 17 using an infrared temperature image measuring device. Then, the heating output is fed back to each heating control device 14 from this detection result, and the pallet being transported is controlled while controlling the output of each heater 13 so that the temperature distribution of the pallet 18 and the substrate 17 is uniform. 18 was heated. The substrate 17, which had obtained a uniform temperature distribution in this way, was transported to a film forming process. All other film forming conditions, such as heating set temperature and pallet conveyance speed, are the same as in Example 6. [0072] The results of this temperature distribution control are shown in a temperature contour diagram in FIG. When compared with the results shown in FIG. 11 in which temperature distribution control was not performed, it can be seen that the temperature distribution in FIG. 12 is smaller and is significantly improved. Both the temperature distribution within the pallet 18 and the temperature distribution of the nine substrates 17 are within about ±5°C. Furthermore, the average substrate temperature for each pallet was determined when 28 pallets 18 were continuously transported and heated and film-formed. FIG. 13 shows the results in comparison with the case where no temperature distribution control was performed. Figure 13(a)
In the case of the comparative example in which the temperature distribution control was not performed, the temperature distribution is also wide, but it can be seen that the average temperature gradually increases as the number of transported pallets increases. On the other hand, in the case of FIG. 13(b) where temperature distribution control is performed, the substrate 17
Although the temperature distribution is also small, it can be seen that the average temperature of the substrates is controlled to be almost constant regardless of the number of pallets 18 transported. [0073] From the above results, by controlling the temperature distribution, it was possible to make the temperature distribution inside the pallet 18 uniform and further improve the temperature variation between the pallets. Since the first pallet 18 does not have temperature distribution data for controlling the output of the heater 13, specific temperature distribution data is required. Therefore, since the individual heater current values for obtaining a uniform temperature distribution on the pallet 18 do not change significantly each time, it is necessary to prepare data on the individual heater current values for the set temperature in advance, or to use the data from the previous measurement. Data was read from the external storage device 7-2 and temperature distribution control was performed from the first pallet. If the temperature difference between both sides of the substrate 17 becomes a problem, temperature measurement devices can be installed on both sides to measure the temperature distribution on both sides of the substrate 17. In this case, with one main controller 7,
It controls the two infrared camera controllers 4-1, measures the temperature images on both sides to determine the temperature distribution, and also controls the heater 1 on both sides.
3 output control was performed. [0074] When the conveyance system 2 conveys the pallet 18, discontinuous slippage may occur and the pallet 18 may not be conveyed at a constant speed. In such a case, if temperature images are measured at regular intervals, distortion will occur in the combined image. Therefore, in such a case, a mechanism for synchronizing the conveyance distance of the pallet 18 and the measuring period is required. A simple method for this mechanism is to add a function to the pallet 18 that serves as a marker to notify the timing of measurement, and the main controller 7 performs interrupt processing based on the signal emitted from this, and measures the image. . FIG. 14 is an example of a pallet in which the pallet 18 is added with a function of generating timing for measuring temperature images. The pallet 18 is provided with a detection hole 26 that takes timing separately from the marker 9, and when the light emitted from the light emitting element 27 passes through this hole and the opposite light receiving element sensor 28 receives this light, the main control It has a mechanism for requesting a measurement interrupt from the device 7. [0075] The present invention includes a device for measuring the temperature distribution state in a wide imaging area that cannot be captured by one infrared imaging and controlling the heating temperature based on the measurement. The present invention is suitable for film forming apparatuses, and was also applied to a CVD film forming apparatus which requires temperature control of the substrate during film forming, but results similar to those of Example 7 were obtained. The present invention is extremely effective when measuring the temperature of a large-area substrate in various other non-contact conditions and when configuring a heating device that requires heating control with a uniform temperature distribution based on the temperature measurement. Furthermore, on the contrary, temperature control is not limited to uniform temperature distribution, but also involves operating each temperature control device 14 to independently control each heater 13 to actively form a predetermined temperature distribution. Needless to say, you can also do this. In Examples 8 to 12 below, examples of film forming apparatuses equipped with a further improved temperature measuring device and heating control device will be described. [0076] <Example 8> FIGS. 15 and 16 show an example of a film forming apparatus for a sputtered magnetic disk. The apparatus configuration is basically similar to that shown in FIG. 10 shown in Example 6, but improvements have been made to the heating mechanism, temperature measurement device, heating control device, etc., and the substrate temperature, which is an important parameter of the film forming conditions, has been improved. , a more uniform temperature distribution can be obtained over a relatively wide range. FIG. 15(a) shows a cross-sectional plan view of this device, and FIG. 15(b) shows a cross-sectional plan view of the device.
1 and 2 show longitudinal front views, respectively. Figure 16(a) is
FIG. 16(b) shows an enlarged cross-sectional side view of the heating tank 12 of No. 5. As shown in FIG. 15, a heater 13 and an infrared camera 4 were installed with a configuration according to the present invention. That is, the temperature measurement chamber 30 is installed downstream of the heating chamber 20 constituted by the vacuum heating tank 12 with respect to the direction in which the pallet 18 is conveyed, and the pallet is placed between the heating chamber 20 and the temperature measurement chamber 30. A slit-shaped partition plate 29 through which 18 passes was installed. Further, as shown in detail in FIG. 16, a vacuum duct 5 having a long slit-shaped opening in a direction orthogonal to the conveyance direction was installed on the wall surface of the vacuum heating tank 12 constituting the temperature measurement chamber 30. The inner walls of the temperature measurement chamber 30, including the inside of the duct 5, were all black-body-treated by anodizing treatment to reduce the reflectance of infrared rays. In addition, the temperature measurement chamber 30
A cooling means (not shown) using water cooling is installed on the outer wall of the vacuum chamber and the vacuum duct 5 to suppress infrared radiation from the inner wall of the vacuum chamber as much as possible. [0077] With this arrangement, the infrared rays emitted from the heater 13 do not enter the infrared camera 4 either directly or by reflection, so a good temperature distribution image is obtained without the influence of the infrared rays from the heater 13. can now be obtained. In this film forming apparatus, the atmosphere in which the substrate exists is different from the atmosphere in which the measuring device for measuring temperature exists. In other words, the pallet 18 which is the object of temperature measurement
Although the substrate 17 and the substrate 17 were placed in a vacuum chamber, the infrared camera 4 was placed on the atmosphere side. For this reason, the vacuum duct 5 requires an infrared window 31 that transmits infrared rays. In this example, this window material has high infrared transmittance and is treated with anti-reflection treatment.
I used an i board. In addition, examples of the window material include A 10 Ca F 2 and LiF, and any material that is generally used as an infrared 23° optical component may be used. [0078] The reason why the vacuum duct 14 is necessary is as follows. First, by using the vacuum duct 5, the infrared window 31
The material could be made smaller. As window materials become larger, they become more expensive and less strong. By installing the vacuum duct, unnecessary infrared rays emitted from sources other than the substrate to be measured do not enter the infrared camera 4, and infrared noise light can be reduced. Furthermore, by extending the vacuum duct 5 to just in front of the infrared camera lens, the effects of infrared absorption by the atmosphere and image fluctuations due to atmospheric convection are eliminated. [0079] On the other hand, if the inside of the duct cannot be evacuated, it is also effective to replace the air in the duct with a gas that does not absorb infrared rays, such as dry nitrogen. Another effective method is to install the infrared camera itself in a dry nitrogen atmosphere, which eliminates infrared absorption by water vapor and stabilizes the camera. The vacuum duct 5 was shaped to have a long slit-like opening in a direction perpendicular to the transport direction. Therefore, the image range that can be imaged at one time is the range where the opening of the vacuum duct 5 is projected onto the base (the range surrounded by a-b-c-d in FIG. 18). Further, the method of synthesizing the individual temperature images obtained by dividing the temperature measurement area of the substrate into a plurality of parts is as described in detail in the previous section of operation and examples. [0080] <Example 9> Next, using FIG. 17, the actual temperature of the substrate was determined from the temperature distribution image obtained by combining the individual temperature images that were actually measured by dividing the temperature of the substrate into multiple parts. An example of a heating control method will be described in which the output of each heater is appropriately controlled according to the temperature distribution so that the temperature distribution over the entire base is uniform. FIG. 17 is a block diagram of a heating control device in which the heating chamber 20 and temperature measurement chamber 30 of the film forming apparatus shown in FIG. 15 are combined with a heater control system and a control unit that controls temperature image synthesis. It is. [0081] The temperature distribution image of the entire pallet 18 on which the substrate 17 is mounted is measured by the same method as described in detail in the previous section of the operation. The main control device 7 calculates temperatures at a plurality of specific positions designated in advance from the actually measured temperature image. The criteria for specifying measurement points was 18 points A to R as indicated in FIG. 18, and positions on the substrate corresponding to the heater positions were specified as much as possible. As a result, the temperature distribution in the vertical direction of the pallet 18, for example, the temperature distribution at measurement points A, D, G, J, M, and P, was determined from the temperature measurement values obtained in one image capture. [0082] The main controller 7 is preset with an approximate expression representing the relationship between the heat generation temperature of the heater (the temperature indicated by the feedback thermocouple 33 installed in the heater 13) and the pallet conveyance speed with respect to the target substrate temperature. Program it and put it there. Furthermore, at a specific transport speed, a relationship table between the substrate temperature and the heat generation temperature of the heater is programmed. It is programmed so that when a target substrate temperature is given, the heater heat generation temperature is uniquely determined. If the film deposition equipment is pallet 7
If the substrate is heated while the pallet remains stationary in the heating chamber 20 for a certain period of time, it is necessary to program an approximation formula or a relationship table for the stationary time instead of the pallet conveyance speed. [0083] Next, the heating control procedure is shown in FIG. 20, and FIG.
The operation will be explained below with reference to FIG. (1) Set the target substrate temperature in the main controller 7. (2) The main controller 7 calculates the heat generation temperature of the heater 13 based on the target substrate temperature, and transfers this data to the D/A converter 15. The D/A converter 15 outputs an analog value based on the data transferred to each heating control device 14. (3) The main controller 7 controls the individual heater power sources. (4) The heating control device 14 drives each heater 13 and performs feedback control based on the output of the thermocouple 33 so that the temperature corresponds to the analog value output by the D/A converter 15. Feedback control of the heating control device 14 is generally performed using on/off control, proportional control (P), proportional + integral control (PI), proportional + differential control (
PD), proportional + integral-sufficient derivative control (PID). (P: Proport
ional, I: Integral, D
: Differential) (5) After the heater temperature reaches the target value and becomes stable, the pallet 18 is transported and heated. The position sensor 8-1 is connected to the pallet 1 being conveyed.
8 is detected, the infrared rays are imaged and a temperature image is synthesized. Once the temperature image for one pallet has been measured, the temperature distribution is determined, the difference from the target substrate temperature is calculated, and a new heater heat generation temperature is calculated. When calculating the heater heat generation temperature, P, P shown above
I, PD, and PID control methods may also be applied. (6) Then, this result is transferred to the D/A converter 15. The D/A converter 15 outputs a new analog value and controls the heating control device 1 so that the temperature corresponds to this value.
4 performs feedback control. [0084] In other words, in this embodiment, while the heat generation temperature of the heater 13 measured by the thermocouple 33 is feedback-controlled, the heat generation temperature setting value of the heater 13 is also feedback-controlled so as to make the substrate temperature uniform. A heavy feedback control method was adopted. There is also a method in which the heater heat generation temperature setting value is feedback-controlled before the measurement and composition of temperature images for one pallet are completed. In other words, the main controller 7 measures the partial temperature images (for example, at B, E, and H in FIG. 18).
After measuring the measurement points N and Q), the substrate temperature and distribution are calculated to calculate a new heater heat generation temperature, and the data is transferred to the D/A converter 15. With this method, the temperature distribution is improved from the middle of heating one pallet. [0085] In addition, a decoder having only a decoder function is used instead of the D/A converter 15 in the block diagram of FIG.
This can also be achieved by using a heating control device with a built-in A conversion function. If the heat dissipation characteristics of the substrate in vacuum are known, the substrate temperature can be estimated based on the elapsed time from the measurement of the substrate temperature. Therefore, by programming this heat dissipation characteristic into the main controller 7, it is possible to estimate the substrate temperature during film formation. Conversely, it is also possible to calculate the heating temperature of the substrate by giving the substrate temperature at the time of film formation, and to heat the substrate at that temperature. Also,
By using this heating method, it is also possible to intentionally provide temperature distribution within the pallet 18. This can be easily achieved by programming the temperature distribution settings in the main controller 7 in advance. [0086] <Example 10> This example shows an example of manufacturing a magnetic disk. An example of application to a device will be described again using FIG. 15. The layer structure of a sputtered magnetic disk is generally such that a Cr or Cr alloy all-intermediate film is formed on a nonmagnetic substrate, and a Co alloy magnetic film and a protective film are sequentially formed thereon. Further, depending on the magnetic film material, there may be a layer structure without an intermediate film. In this example, an aluminum alloy plate plated with N1-P was used as the substrate, and a textured substrate was used in which fine grooves were formed on the circumference of the substrate surface. The layer structure of the magnetic disk is a textured N1-P plated substrate, a Cr intermediate film, and a Co-Cr-T magnetic medium.
The structure was made of a three-layer film consisting of an a-alloy magnetic film and a carbon film (C) as a protective film. Therefore, in the sputtering chamber 3, the three types of target materials 21 are installed facing each other. [0087] Nine substrates 17 are mounted on the pallet 18 and loaded into the loading chamber 19. In the preparation chamber 19, preliminary heating was performed for the purpose of degassing the substrates and pallets while performing high vacuum evacuation. During sputtering, after introducing Ar gas into the sputtering chamber 21, Cr gas is introduced into the sputtering chamber 21. Electric power is applied to each cathode 32 of Co-Cr-Ta and C to discharge it. During this time, the temperature of the heater section is saturated using the heating method shown in Example 9. [0088] Next, the gate valve 23 of each chamber is opened, and the pallets 18 are transported one by one from the preparation chamber 19. The pallet 18 is
It was conveyed at a constant speed of 20 cm/min. After the pallet 18 is heated in the heating chamber 20, a partial image of the visual range within the duct is measured in color in synchronization with the conveyance speed in the temperature measurement chamber 30. This measured image information is sequentially accumulated in the main controller 7, and later these image information are combined and a color image is displayed on the monitor 7-1 as the temperature distribution of the entire pallet, as shown in the output screen of FIG. 19(a). is displayed. Furthermore, as shown in the output screen of FIG. 19(b), temperature changes between multiple pallets can also be displayed by switching the screen. [0089] From the temperature image measured here, the main controller 7 calculates the temperature distribution and performs heating control so that the temperature distribution of the substrate becomes small. The heating control method and temperature measurement method were performed in the same manner as described in Examples 8 and 9. A Cr interlayer film, a Co-C
An r-Ta magnetic film and a C protective film were sequentially formed to a predetermined thickness. The pallets on which the film has been formed are sequentially taken out from room 2.
2, and after all the pallets 18 are coated,
A magnetic disk was obtained by opening only the take-out chamber 22. [0090] As a comparative example, when heating control is not performed, FIG.
As shown in (1), the temperature of the upper and lower substrates in the pallet was 10 to 30°C lower than that of the middle substrate.
Non-uniform coercivity occurred among the nine magnetic disks in the pallet. In particular, as shown in Figure 25 (2), in a large disk substrate with a diameter of 8 inches or more, a temperature distribution of approximately 20°C occurs within the substrate, and even though the Co-Cr-Ta magnetic medium has a uniform film thickness, Nevertheless, [see FIG. 25 (3)], a distribution of coercive force occurred in the circumferential direction [see the broken line in FIG. 25 (4), the solid line is the example]. This caused a problem in that the head playback output (envelope output) per revolution of the disk fluctuated (see the broken line in FIG. 25 (5), the solid line is the example). In addition, since multiple pallets are coated over a long period of time,
The temperature of the heater sometimes fluctuated, and the magnetic properties also varied between pallets. [0091] However, according to the heating method shown in the example, the temperature distribution of the substrates inside the pallet could be controlled within ±4°C (not shown). Both exhibited almost the same magnetic properties. That is,
The coercive force in the circumferential direction and the head reproduction output (envelope output) have flat characteristics as shown by the solid lines in (4) and (5) of the same figure. Furthermore, even in the case of a large disk substrate, no distribution of magnetic properties occurred within the substrate. Furthermore, since the substrate temperature was controlled even during long film deposition, there was no variation in magnetic properties between pallets. Furthermore, the nine magnetic disks in the pallet have a strong magnetic anisotropy in the circumferential direction by applying texture processing to the N1-P substrate surface, which causes an effect on the head playback output per disk rotation due to electromagnetic conversion characteristics. This made it possible to reduce the undulations that had occurred. [0092] In the above embodiment, an example was shown in which thin film formation was performed using the sputtering method, but the temperature control method of the present invention is equally effective in a film forming apparatus using other thin film forming techniques using the CVD method. For example, it has been confirmed that it is possible to form metal materials such as Si, 5i-0, 5i-N, and C. When forming a thin film of any material, the temperature of the substrate has a large effect on the film quality. In particular, the plasma CVD method, which forms a film by applying RF power under reduced pressure, can form a film even on a wide-area substrate such as a solar cell, so it is possible to measure the temperature distribution on a wide-area substrate. By uniformly controlling heating, uniform photoelectric conversion characteristics were obtained. [0093] <Example 11> FIG. 21 shows an example of a sputter magnetic disk compatible film forming apparatus using the infrared temperature measuring device, temperature measuring method, and heating control device described in Examples 8 and 9 in a pallet circulation type film forming apparatus. This is an example of a film forming apparatus. The feature of this device is that after film formation, the pallet 18 is taken out from the chamber 2.
2, and conveys the pallet 18 to the substrate attachment/detachment section 35 in front of the preparation chamber 19 using the two lids 34-1 and 34-2 and the reverse conveyance system 2'. In the substrate removal section 35, an automatic machine exchanges the substrate 17 on which film formation has been completed and the substrate before film formation from the pallet 18, and sends the substrate 17 to the preparation chamber 19 again. Therefore, while a plurality of pallets 18 are being circulated within the device, the substrate 17
It is suitable for mass production equipment because it automatically attaches and detaches. In the conveyance method, the conveyance system for each chamber is independent and operates in conjunction with the conveyance systems before and after it. [0094] The method of operation is as follows. (1) After carrying the pallet 18 into the preparation chamber 19, the transport system 2 of the preparation chamber 19 is stopped and the inside of the tank is evacuated to a high vacuum. (2) After completing the exhaust, open the gate valve 23 on the side of the heating chamber 20 and carry the pallet 18 into the heating chamber 20. (3) After loading, the transport system 2 of the heating chamber 20 is stopped, the gate valve 23 is closed, and the pallet 18 and substrate 17 are heated while being evacuated. Heating is performed with the pallet 18 facing the heater 13. Five heaters 13 were arranged in parallel at predetermined intervals in a direction perpendicular to the conveyance direction. (4) Temperature measurement is performed when the pallet 18 is transported to the sputtering chamber 21 after heating is completed. The heating control method and temperature measurement method were carried out based on the contents described in the previous section of operation and Examples 8 and 9, respectively. (5) After measuring the temperature of the substrate 17, the pallet 18 is carried into the sputtering chamber 21. In the sputtering chamber 21, the pallet 1
A Cr intermediate film, a Co-Cr-Ta magnetic film, and a C protective film were successively formed on the substrate 17 to a predetermined thickness during the process of passing through the substrate 17 at a constant speed. [0095] (6) The pallet 18 on which the film formation has been completed is transferred to the take-out chamber 22.
After the extraction chamber is exposed to the atmosphere, it is transported to Thereafter, the pallet 18 is sent to the ascending lifter 34-1 and the reverse direction transport system 2', and is further transported to the substrate attachment/detachment section 35 by the descending lid 34-2. (7) Here, the substrate 17 on which film formation has been completed is removed from the pallet 18 by an automatic machine, a new substrate 17 is attached, and the substrate 17 is sent to the preparation chamber 19. In this way, the above operation was repeated for each pallet circulating in the apparatus to obtain a magnetic disk. The obtained magnetic disk had uniform magnetic properties in the in-plane circumferential direction, similar to the magnetic disk obtained in Example 10. [0096] <Example 12> FIGS. 22 and 23 show sputtering magnetism in which the infrared temperature measurement device, temperature measurement method, and heating control device described in Examples 8 and 9 are applied to a single-wafer film forming apparatus. This is an example of a film forming apparatus compatible with disks. Figure 22(a)
22(b) is a partially broken front view, FIG. 23(a) is an enlarged vertical sectional side view of the main part of FIG. 22, and FIG. 23(b) is a sputtering chamber also shown in FIG. 22. FIG. 21 is an enlarged longitudinal sectional front view of FIG. The feature of this apparatus is that it forms a film on each substrate one by one, and has the following configuration. As shown in FIG. 23, there is a vacuum chamber L/UL (Load/Unload) chamber 36 that serves both for loading and unloading the substrate 17, a transfer chamber 38 having the substrate transfer system 2, a heating chamber 20, and continuous multilayer film formation. The sputtering chamber 21 is composed of several sputtering chambers 21, and each vacuum chamber is equipped with an evacuation system 24. [0097] The substrate processing operation is as follows. (1) As shown in FIG. 23, take out the substrates one by one from the cassette 41 containing the substrates 17 before film formation, mount them on the carrier 37 that holds the substrates, lower the hoist 39, and
It is carried into the L room 36. Thereafter, the L/UL chamber 36 is evacuated. (2) After exhausting the L/UL chamber 36, the gate valve 23
is opened, and the carrier 37 carrying the board 17 is transferred to the transfer chamber 3.
Send it to 8. When transported below the heating chamber 20, the hoist 3
9 to push the carrier 37 up to the heating chamber 20 and lift the substrate 17
is inserted into the heating chamber 20 to heat the substrate for a certain period of time. As shown in FIGS. 23(a) and (b), the heating chamber 20 and sputtering chamber 21 are separated from other vacuum chambers by pushing up the carrier 37, and are evacuated by an independent vacuum exhaust system. do. [0098] (3) The temperature measurement chamber 30 installed in the transfer chamber 38 between the heating chamber 20 and the sputtering chamber 21 measures the temperature of one substrate by one photographing process. If the board 17 is large,
It is also possible to obtain a temperature image of the entire board by dividing the image into multiple shots and combining the temperature images later. The heating control method after temperature measurement is the same as described in Example 9. (4) A carrier 37 is placed under the first layer sputtering chamber 21-1.
When the substrate 17 is transported, push up the carrier 37
is inserted into the sputtering chamber 21-1. And Figure 23
As shown in (a), power is applied to the two opposing cathodes 32, and the film is formed to a predetermined thickness by controlling the film forming time and the applied power. After the first layer was completed, the second and subsequent layers were sequentially formed in the sputtering chamber 21-2 and 21-3 in the same manner to obtain a multilayer film. The cathode 32 of the sputtering chamber 21 is equipped with a circular target 25, which faces each other so that a film can be formed on both sides of the substrate. The substrate 17 is positioned so that the center of the target 25 and the center of the substrate 17 coincide with each other, and a film is formed while standing still and facing each other. [0099] (5) After the film formation is completed, the carrier is transferred to the reverse transport system 2' (return side) in the transport chamber 38, as shown in FIG. 22(a).
It is returned to the L/U L room 36. In the L/UL chamber 36, after confirming that the substrate before film formation has been transferred to the transfer chamber 38, the gate valve 23 is closed and the total pressure of the L/UL chamber 36 is set to 36. After opening the loading door 40, raise the carrier 37 and
Take the board out of the UL room. Here, the substrate on which film formation has been completed is taken out, and a new substrate 17 before film formation is mounted on the carrier 37, and the process from step (1) above is repeated again. The attachment and detachment of substrates between the substrate cassette 41 and the carrier 37 is performed by an automatic machine. Since the temperature measurement chamber 30 is installed in the transfer chamber 38 during transfer from the heating chamber 20 to the sputtering chamber 21, the infrared rays from the heating chamber 20 do not directly enter, but become an optical path for the vacuum duct 5, etc. The inner wall of the component was subjected to black body treatment in the same manner as in Example 8. [01001 This film forming apparatus has a substrate 1 in each sputtering chamber 21 during film forming.
Since it is only necessary to insert the sputtering film and the carrier 37, it is possible to reduce the amount of impurity gas brought in from the outside air.
1 is equipped with a dedicated vacuum evacuation system, so impurity gases (e.g. H2C, H2, C
o2, etc.) could be lowered. Furthermore, this film forming apparatus was used not only for magnetic disks but also as a sputtering apparatus for magneto-optical disks. A magneto-optical disk is a recording/reproducing device that performs magnetization recording using heat in a magnetic field and optically reproducing information using Kerr rotation. Magnetic materials include Tb-Fe-Co based materials and Nd-Fe-C.
Although an o-based material is used, in order to form stable minute magnetic domains, it is necessary to have large magnetic anisotropy and coercive force in the direction perpendicular to the film surface. Therefore, in the film formation process, by controlling the substrate heating temperature with high precision and keeping the impurity gas concentration in the sputtering atmosphere low, it was possible to form a multilayer film for magneto-optical disks that can form stable magnetic domains. . [0101] <Example 13> FIG. 24 shows an example in which the infrared temperature measurement device, temperature measurement method, and heating control device described in Examples 8 and 9 are applied to a rotating drum type sputtering apparatus. Figure (a) shows a cross-sectional plan view, and figure (b) shows a partially cutaway front view. In this device, a substrate 17 is mounted on a rotary drum-shaped substrate holder 44.
This is a type of sputtering apparatus that heats and forms a film on a substrate while rotating the drum in front of the heater 13 and in front of the discharge target 25. And target 2
5, a shutter 43, a rotating drum-shaped substrate holder 44, a heating section 20, and a temperature measuring section 30 are attached to one vacuum chamber 45. This is a batch type device that opens the inside to the atmosphere. [0102] In the film forming method using this apparatus, the substrate 17 is mounted on a rotating rectangular drum-shaped substrate holder 44, and vacuum evacuation is performed. After evacuation to a degree of vacuum of about 10<-5> to 1<0>-6 Torr, the substrate holder 44 is heated while being rotated. Then, when the degree of vacuum becomes below the target level, film formation is started. To form a film, first, discharge is caused with the shutter 43 closed. This is to remove oxidation and contamination on the surface of the target 25 that occurs when the vacuum chamber 45 is opened to the atmosphere by sputtering for a certain period of time. After that, the shutter 43 is opened and the board 17 is
Form a film on top. At this time, the film is deposited to a predetermined thickness while rotating the substrate holder 44 at a constant rotation speed. Moreover, by installing a plurality of cathodes 32 in the vacuum chamber 45, a multilayer film can also be formed. [0103] The temperature measuring unit 30 was installed below the heater 13 with respect to the rotational direction of the substrate holder 44 based on the method described in Example 8. At this time, since the substrate holder 44 is a polygonal drum-shaped holder, when the drum rotates, the heater 13
The positions of the heater 13 and the vacuum duct 5 are designed so that the infrared rays emitted from the cathode 32 during sputtering are reflected on the flat surface of the holder and do not enter the vacuum duct 5. Note that 46 in the figure is a partition wall. The partition plate 29 is configured to protrude to the extent that it does not come into contact with the substrate holder 44 side so that unnecessary infrared rays do not enter the temperature measuring section 30 of the substrate. Further, the partition plate 29 of the thermometer side part 30 and the inner wall of the duct 5 are both subjected to black body treatment to prevent reflection. [0104] The temperature image is captured using the position sensor 8 attached to the rotating shaft.
-1, the measurement timing was set so that one side of the rectangular drum could be photographed twice. Temperature distribution images for one rotation of the drum (front side) were sequentially captured and combined to obtain an overall temperature distribution image. Since the substrate holder 44 rotates, a temperature distribution occurs in the axial direction of the cylinder. Therefore, the heater 13 was installed divided in the cylindrical axis direction, and the average value of the substrate temperature was calculated in correspondence with this position, and the output of the heater 13 was controlled. At this time, the heating control method was based on the method of Example 9. The first target 25 installed in the sputtering chamber 21 is
The sputtering chamber 21-1 is equipped with a CrSi alloy, and the second sputtering chamber 21-2 is equipped with an electrode-forming conductor such as AI, Cr, or Cu.
A thin film resistor film of CrSi alloy was formed thereon. This resistor is used as a thin film heating resistor, a terminating resistor in a thin film multilayer wiring board, a resistor in a hybrid IC board, and the like. [0105] Since the resistivity (sheet resistance) of such a thin film resistor is also affected by the substrate temperature during film formation, it is necessary to manage the substrate temperature and temperature distribution to be uniform. By applying the substrate temperature measurement method and heating control method to the resistor film formed by this film forming apparatus, it is possible to reduce the resistivity distribution over a wide range of the substrate holder. We were able to increase the throughput of the film deposition equipment. [0106]

【Effect of the invention】

As explained above, by using the infrared temperature image measurement method and device of the present invention, it is possible to use a small measurement system with a short distance between the infrared camera and the substrate that is the object to be measured, but it is possible to make measurements that have not been possible until now. Temperature distribution can now be easily measured even on substrates that require a wide measurement area. Further, even when the base body of the measurement target is stationary, as well as when it is moving, it is possible to measure the temperature distribution over a large area in synchronization with the movement. In particular, the present invention is useful for non-contact measurement of temperature distribution over a large area when the substrate is at high temperature or in a vacuum and is moving, such as in a heating device or a vacuum film forming device. Very effective. [0107] According to the heating device of the present invention, it is possible to control the heating of a substrate, which is an object to be heated, so as to obtain a uniform temperature distribution, and this was particularly effective for a substrate having a large area. In addition, for example, in an in-line sputtering device of a pallet conveyance type in which this heating device is adapted to a vacuum film forming device,
The temperature distribution within the mm x 600 mm pallet could be controlled within ±5°C. According to the vacuum film forming apparatus of the present invention, the temperature distribution of a large-area pallet being transported can be measured, and the output can be fed back to the heating device based on the measurement result of this temperature distribution. For this reason, heating can be automatically controlled so that the entire pallet has a uniform temperature distribution of approximately ±5° C., and temperature variations between pallets can also be reduced, making it possible to form a homogeneous film. [0108] Furthermore, since it became possible to measure the temperature of each disk substrate in a pallet, this made a great contribution to quality control and process control. Furthermore, by applying the heating temperature control method of the present invention, it has become possible to realize a heating device that can be adjusted to any predetermined non-uniform temperature distribution as necessary. [0109] Further, in a preferred configuration example of the vacuum film forming apparatus of the present invention, a heating chamber for the substrate and a temperature measuring chamber are installed at different positions apart from each other in the vacuum chamber with a partition plate in between, and the temperature is The measurement room is equipped with a vacuum duct with an infrared camera attached to one end through an infrared transmission window, and the inside of the temperature measurement room, which includes the vacuum duct that serves as the infrared light path, is made into a black body. Infrared rays no longer enter the infrared camera directly or reflected, noise components due to the influence of the heater do not appear in the temperature distribution image, a good temperature distribution image can be obtained, and temperature measurement errors can be reduced. Ta. That is, by providing this infrared temperature measuring device,
A vacuum film-forming apparatus that can accurately measure the substrate temperature immediately before film-forming was obtained. In addition, the temperature of the substrate moving in the vacuum chamber of the film forming apparatus was measured by measuring infrared rays emitted from the substrate outside the vacuum chamber. At this time, by extending the vacuum duct to just in front of the infrared camera lens, we were able to obtain a good temperature distribution image without being affected by the atmosphere. The main controller that controls the synthesis of temperature distribution images and temperature control is based on the temperature distribution information of this substrate.
By determining the difference from a preset temperature distribution and controlling each heater, the desired temperature distribution of the substrate was obtained. By applying this heating control system to a vacuum film forming apparatus, a vacuum film forming apparatus capable of forming a film with a desired temperature distribution was obtained. For example, Co-Cr that constitutes a magnetic disk
The coercive force of the magnetic medium changes depending on the temperature, and temperature control including the temperature distribution of the substrate directly affects the performance of the magnetic medium. In addition, in order to form a film with high coercive force magnetic media associated with high recording density,
Since the process is applied to form a film at a high temperature that does not magnetize the N1-P substrate, highly accurate temperature control is required. The manufactured magnetic disk had uniform magnetic properties in the circumferential direction and was able to reduce the amount of waviness in the envelope output. Furthermore, since the temperature can be controlled precisely, variations in characteristics between disk substrates can be reduced, and production yields can be improved.

[Brief explanation of drawings]

FIG. 1 is a schematic block diagram showing the basic configuration of an infrared image measuring device of the present invention.

FIG. 2 is a measurement flowchart when temperature is measured while stepwise conveying the substrate.

FIG. 3 is a data array diagram when images are synthesized within the main control device.

FIG. 4 is a measurement flowchart when measuring the temperature while conveying the substrate at a constant speed.

FIG. 5 is an explanatory diagram showing an embodiment of the heating device of the present invention, and FIG. 5(a)
is a partially sectional front view, and FIG. 5(b) is a side view.

FIG. 6 is a configuration diagram of a control system that is an embodiment of the heating device of the present invention in which a temperature measuring device is added to control heating output.

FIG. 7 is a temperature distribution diagram of a large area substrate measured by the infrared image measuring device of the present invention.

FIG. 8 is a temperature distribution diagram of a substrate obtained by controlling the temperature distribution using the infrared image measuring device of the present invention.

FIG. 9 is an explanatory diagram of the heating control method of the present invention, in which FIG. 9(a) is a temperature distribution diagram showing the actual measurement results of temperature distribution in equal grade, and FIG. 9(b)
FIG. 2 is an explanatory diagram of a heating control method that adjusts to a uniform set temperature based on the result.

FIG. 10 shows a sputtering apparatus that is an embodiment of the present invention.
FIG. 10(a) is a cross-sectional plan view, and FIG. 10(b) is a vertical cross-sectional front view.

[Figure 11] It is a temperature distribution diagram of a pallet and a board|substrate.

FIG. 121 is a temperature distribution diagram of the pallet and the substrate when the temperature distribution is controlled. FIG. 13 is a temperature characteristic diagram showing the change in average temperature between pallets; FIG. 13(a) is a characteristic diagram of a comparative example without temperature control;
b) is a characteristic diagram with temperature control.

FIG. 14 is a perspective view of a pallet equipped with a function for timing temperature measurement.

15 shows a schematic diagram of a continuous sputtering apparatus to which the present invention is applied, FIG. 15(a) is a cross-sectional plan view, and FIG. 15(b) is a vertical cross-sectional plan view.

16 is an extracted view of the heating chamber 20 and temperature measurement chamber 30 in FIG. 15, where FIG. 16(a) is a cross-sectional plan view and FIG. 16(b) is a
It is an AA' cross-sectional enlarged view of (a).

FIG. 17 is a configuration diagram of a heating control system that controls heating output by adding a temperature measuring device.

FIG. 18 is an explanatory diagram showing the relationship between the imaging range of the temperature image, the distribution measurement points, and the installation position of the heater.

[Figure 19] FIG. 3 is a diagram showing a monitor screen of the main control device of the present invention.

FIG. 20 is a flowchart showing a procedure for controlling heating while measuring temperature.

FIG. 21 is a longitudinal sectional front view of a sputtering apparatus according to a different embodiment of the present invention in which a pallet circulation function is added to the sputtering apparatus.

FIG. 22 shows a schematic view of a single-wafer sputtering apparatus according to a further different embodiment of the present invention, in which FIG. 22(a) is a partially cutaway top view, and FIG. 22(b) is a partially cutaway front view. It is.

FIG. 23 shows the main parts of the single-wafer sputtering apparatus in FIG. 22,
23(a) is a longitudinal sectional side view of FIG. 22, and FIG. 23(b) is a longitudinal sectional front view of the inside of the sputtering chamber of FIG. 22.

24 shows a schematic diagram of a rotary drum type sputtering apparatus according to still another embodiment of the present invention, in which FIG. 24(a) is a cross-sectional plan view and FIG. 24(b) is a partially cutaway front view.

[Figure 25] Figure 25 (1) shows the distribution of the temperature and coercive force of the board in the pallet, and Figure 25 (2) shows the characteristics of the substrate.
25(3) is a diagram of the film thickness distribution in the circumferential direction, FIG. 25(4) is a diagram of the coercive force distribution in the circumferential direction, and FIG. 25(5) is a diagram of the head output distribution of an inch disk.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1...Base body, 2(2')...Transportation system, 3...Transportation system control device, 4...Infrared camera, 4-1...Infrared camera control device, 4
-2...Infrared camera monitor, 5...Duct,
6... Linear stage, 7... Main controller,
7-1... Monitor, 7-2... External storage device, 8... Position detector, 8-1...
Sensor (light receiving element) 9... Marker,
10... Linear stage drive system 11... Linear stage control device, 12... Heating tank, 13... Heating mechanism (heater), 14... Heating control device, 15°"D/A change' 1AFr,
16... Argon cylinder, 17... Substrate, 20... Heating chamber, 22... Removal chamber, 24... Vacuum exhaust system, 26... Detection hole, 28... Sensor (light receiving element) ), 31... Infrared window, 34... Lifter, 36... L/UL37 carrier, 40... Loading door, 18... Pallet, 19... Preparation room, 21...
Sputtering chamber, 23... Gate valve, 25... Target, 27... Sensor (light emitting element) 29... Partition plate, 30... Temperature measurement chamber, 32...
- Cathode, 33... Thermocouple, 35... Board attachment/detachment section, 38... Transfer chamber, 39... Hoist, 411.
Cassette, 42...exhaust port,

[Document name] Drawing

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Claims (1)

[Scope of Claims] [Claim 1] An infrared imaging device that captures infrared rays emitted from a heated substrate to generate an infrared image, and converts this infrared image into infrared temperature image information to measure the temperature of the substrate. A temperature measuring device comprising: means for dividing the infrared imaging region of the base into a plurality of locations;
means for converting the individual infrared image information temporally and spatially divided and imaged by the imaging device into infrared temperature image information; and a means for sequentially accumulating the divided infrared temperature image information; An infrared temperature image measuring device comprising: means for synthesizing infrared temperature image information of the entire substrate to reproduce temperature distribution of the entire substrate. 2. A control system that temporally and spatially controls means for dividing the infrared imaging area of the base body into a plurality of locations to take images, and generating infrared temperature image information based on the divided infrared image information. The main controller includes means for accumulating successively converted temperature information, and means for synthesizing the accumulated infrared temperature image information of the entire substrate to reproduce the temperature distribution of the entire substrate. The infrared temperature image measuring device according to claim 1. 3. The means for dividing the infrared imaging region of the base into a plurality of locations for imaging, the infrared imaging is performed by moving the base in a fixed direction and dividing the base into parts in synchronization with this movement. 3. The infrared temperature image measuring device according to claim 1, wherein the infrared temperature image measuring device is configured to take infrared images a plurality of times. 4. Means for dividing the infrared imaging region of the base into a plurality of locations for imaging, the base is moved in one direction and divided into elongated slits in a direction perpendicular to the direction of movement of the base. 3. The infrared temperature image measuring device according to claim 1, wherein the infrared image is sequentially captured by the infrared image capturing device a plurality of times in synchronization with the movement of the substrate. 5. As a means for dividing the infrared imaging region of the substrate into a plurality of locations and capturing images, the infrared imaging device is configured to be movable within a predetermined measurement range, and the infrared image is measured in one section. 3. The infrared temperature image measuring device according to claim 1, wherein the infrared temperature image measuring device is stationary, and the infrared temperature image measuring device captures images in a plurality of times while sequentially moving adjacent regions within the movable range. 6. The infrared temperature image measuring device according to claim 2, further comprising an external storage device that sequentially stores infrared temperature image information of the entire substrate that has been temporarily stored in the main controller. 7. Infrared radiation emitted from the heated substrate is imaged by an infrared imaging device, the infrared image is output as a brightness signal, and the infrared image output is converted into infrared temperature image information to measure the temperature of the substrate. A temperature measurement method, wherein the infrared imaging area of the base is divided into a plurality of locations and images are taken, and the individual infrared image outputs temporally and spatially divided and imaged by the imaging device are converted into infrared temperature image outputs. The divided and measured infrared temperature image outputs are sequentially accumulated.
An infrared temperature image measuring method comprising combining the accumulated infrared temperature image outputs of the entire substrate to reproduce the temperature distribution of the entire substrate. 8. A heating mechanism disposed in a heating tank to face the substrate; an infrared imaging device that generates an infrared image by capturing infrared rays emitted from the substrate heated by the heating mechanism; a temperature measuring device comprising means for measuring the temperature of the substrate by converting it into temperature image information; and a temperature control device heating-controlling the temperature of the substrate based on the output from the temperature measuring device. A heating device according to claim 1, 2, 3, 4, 5 or 6, wherein the temperature measuring device is
It is composed of the infrared temperature image measuring device described above, and also includes a means for calculating the amount of deviation from a predetermined heating temperature distribution of the substrate, and converting a digital control signal generated based on the calculation output into an analog signal. and temperature control means for controlling the temperature of the heating mechanism to an appropriate temperature distribution. 9. The main control device of the infrared temperature image measuring device according to claim 2, further comprising: means for calculating the amount of deviation from the predetermined heating temperature distribution of the substrate set in advance; 9. The heating device according to claim 8, further comprising means for generating a digital control signal for controlling said temperature control means. 10. A plurality of independent heating mechanisms are arranged in the heating tank in a direction in which temperature distribution of the substrate occurs, and each of these heating mechanisms is independently controlled in output by the temperature control means. 9. The heating device according to claim 8, wherein the heating temperature of the substrate can be set to a predetermined temperature distribution. [Claim 1
1] A base body movably held in a heating tank is heated by a heating mechanism, and an infrared image radiated from the heated base body is imaged by an infrared imaging device, and an infrared image is output as a brightness signal. A temperature control method for heating a substrate, which measures the temperature of the substrate by converting an infrared image output into infrared temperature image information, and controls the temperature of the substrate based on the temperature output, the method comprising: , the infrared imaging area of the base is divided into multiple locations and images are taken, the individual infrared image outputs taken after being divided temporally and spatially are converted into infrared temperature image outputs, and the infrared temperature image outputs are divided and measured. sequentially accumulating the infrared temperature image outputs, and synthesizing the accumulated infrared temperature image outputs of the entire substrate to reproduce and measure the temperature distribution of the entire substrate;
The amount of deviation from a predetermined heating temperature distribution of the substrate is calculated, and the digital control signal generated based on the calculation output is converted into an analog signal to adjust the temperature of the heating mechanism to the appropriate set temperature distribution. A method for controlling the heating temperature of a substrate. 12. A vacuum thin film forming apparatus comprising a vacuum chamber, means for evacuating the vacuum chamber, and means for forming a thin film by holding a substrate on a sample stage in the vacuum chamber at a predetermined heating temperature. It's hot,
A vacuum film forming apparatus comprising the heating device according to claim 8, 9 or 10 as means for holding the substrate at a predetermined heating temperature. Claim 13: Claim 1, wherein the vacuum chamber is a sputtering processing chamber.
2. The film forming apparatus according to 2. 14. A preparation chamber, a heating chamber, a sputtering chamber, and a take-out chamber are each connected in series via a gate valve, and an exhaust system is connected to each chamber to independently exhaust each chamber; The apparatus further comprises means for inserting a plurality of pallet groups in which a plurality of pallets each holding a plurality of substrates with both sides opened into the preparation chamber and sequentially transporting the pallets to each of the heating chamber, sputtering chamber and take-out chamber. 9. A sputtering film forming apparatus, wherein the heating chamber is configured with the heating device according to claim 8. 15. The film forming apparatus according to claim 12, wherein the vacuum chamber is a CVD processing chamber. 16. A preparation chamber, a heating chamber, a CVD processing chamber, and a take-out chamber are each connected in series via a gate valve, and an exhaust system is connected to each of the chambers to independently exhaust each chamber. , comprising a means for inserting a plurality of pallet groups in which a plurality of substrates are held with both sides open, respectively, into the preparation chamber, and sequentially transporting the pallets to each of the heating chamber, sputtering chamber, and take-out chamber. Claim 8
A CVD film forming apparatus comprising the heating device described above. 17. A heating mechanism that performs heat treatment on a base consisting of a substrate on which a thin film is to be formed and a jig that holds the same, and an infrared imaging device that generates an infrared image by imaging infrared rays emitted from the heated base. In a vacuum thin film forming apparatus equipped with an infrared temperature image measuring device comprising means for converting the infrared image into infrared temperature image information and measuring the temperature of the substrate, a part in the apparatus that heat-processes the substrate; 2. A film forming apparatus as claimed in claim 1, wherein a portion within the apparatus for measuring the temperature of the heated substrate is located at a different position separated by a partition plate. 18. A claim in which the atmosphere in which the substrate after the heat treatment emits infrared rays and the atmosphere in which the infrared temperature image measuring device for measuring the infrared temperature image of the substrate are installed are different atmospheres. 18. The film forming apparatus according to item 17. 19. A film forming apparatus comprising at least a preparation chamber, a heating chamber, a temperature measurement chamber, a film forming chamber, and a transport means for transporting a substrate into each of these chambers, the transport means means for heat-treating the substrates continuously fed by the
Next, a means for actually measuring the temperature distribution of the substrate is used, and a deviation amount between a predetermined temperature distribution of the substrate set in advance and the actually measured temperature distribution is calculated, and the substrates after the substrate whose temperature distribution has been measured are
18. The film forming apparatus according to claim 17, further comprising heating control means for controlling the heating output of the heating mechanism so as to control the temperature distribution to a preset temperature distribution based on a result based on the calculation of the amount of deviation. 20. A film forming apparatus comprising: a preparation chamber, a heating chamber, a film forming chamber, and a take-out chamber arranged in series, and comprising at least a transport means for transporting the substrate into each of these chambers. 18. The film forming apparatus according to claim 17, wherein the substrate transport means is a pallet transport system having a mechanism capable of circulating a pallet in which a plurality of substrates are held with both sides open. 21. A vacuum chamber for loading and unloading substrates, a vacuum chamber for heating the substrates, and a vacuum chamber for forming films, and continuously heats and forms films one by one on the substrates. 18. The film forming apparatus according to claim 17, further comprising a transport system for performing the film forming process. 22. A film forming apparatus comprising a film forming means and a heating means in one common vacuum chamber and heating and forming a film while a polygonal substrate holder holding the substrate rotates. The film forming apparatus according to claim 17. 23. A duct having an infrared camera attached to one end of the smaller diameter side through an infrared transmitting window is disposed in a part of the vacuum chamber to constitute a temperature measurement chamber, and the inside of the duct is 23. The film forming apparatus according to any one of claims 12 to 22, wherein the inner wall of the temperature measurement chamber containing the temperature measuring chamber is subjected to a black body treatment to increase the emissivity of the inner wall.