DE4039007A1 - IR temp. measuring appts. - produces IR image for conversion into IR temp. distribution data - Google Patents

Abstract

In an IR temp. measuring unit, for detecting IR radiation emission of an object using an IR imaging device and for measuring the two-dimensional temp. distribution of the object, the novelty comprises provision of a system for reducing scattered IR rays, other than the IR rays emitted from the object through the optical channel, in the IR radiation transmitted to the imaging device. Process chamber and a vacuum process chamber, incorporating the unit (A) are also claimed. USE/ADVANTAGE - The temp. measuring units are used for measuring the temp. distribution of substrates and substrate holders in thin film deposition processes. Temp. distribution can be measured over a wide range in a contact-free manner with reduced errors from the outside of vacuum chambers.

Description

The present invention relates to an infrared temperature measuring device for very precise, non-contact measurement using infrared radiation, the Temperature distribution of a substrate and a substrate holder, which are in a process chamber enclosing a vacuum or a gas. The Invention relates to a method for correcting errors in the device. The The invention further relates to an infrared temperature image measuring method and the associated measuring device. The invention further relates to a heating device for simultaneous heating and a vacuum vaporization apparatus for a sputtering device, a vacuum evaporation device, a CVD device, and the like, as well as the associated Heating temperature control process. The invention further relates to Vacuum steamer with built-in heater, and it draws the heating control method in connection with the heating device.

The latest development of circuit components using thin film technology depends heavily on the progress or improvement of the film evaporation technique by which the chemical composition and the crystalline structure of a film by methods such as the vacuum evaporation method, the CVD method and the sputtering method with high accuracy can be controlled. The sputtering process, which is a typical film evaporation process, precise control is fundamental, controllable parameters, such as the evaporation performance, the evaporation pressure and the substrate temperature during the deposition process is important to a  Mass production of circuit components with thin film. From These parameters can determine the evaporation performance and the evaporation pressure can be measured directly, can be controlled relatively easily.

However, since it is not possible to change the substrate temperature and temperature distribution In the substrate, it was almost impossible to measure the substrate temperature exactly can be controlled very precisely using conventional technology.

Usually, simple methods for measuring the temperature are considered to be too heating object generally the following two methods:

The first method is a method in which a thermocouple with the Measurement object is brought into contact, the electromotive force of the same to measure the temperature. However, this method suffers the disadvantage that the surface of the substrate by touching the Thermocouple with the substrate, for example a magnetic disk substrate and an optical disc substrate as used in the unexamined Japanese patent publication No. 60-1 31 430 have been disclosed and both surfaces are used need to be damaged. There is also the risk that through a such contact creates dust or powder. It continues with the first Measuring method only possible to measure the temperature of a localized area, with which the thermocouple is in contact, while it is very difficult the temperature distribution or the temperature gradient of the object to be measured capture. For example, the static direct sputtering process to attach films on a static substrate the temperature of the Substrate generally using a near the substrate or on a Substrate holder mounted thermocouple measured. Although the thermocouple process works precisely with temperature measurement, it is in the strict sense questionable whether the temperature of the substrate itself is measured. Even if that desired temperature would be measured, the process suffers from the significant shortcoming that the temperature is only at one point of the substrate is measured to which the thermocouple is attached. In a so-called Transport steaming in a steaming apparatus for series production with the help of the pollination process, substrate holders (Pallets) on which a variety of substrates are attached, continuously and transported, heated and coated in series. It is therefore impossible to  Attach thermocouple to the substrates so that the temperature is on non-contact way must be measured. For example, it is important that after applying a magnetic film to a sputter magnetic disk Substrate temperature and the temperature distribution within the substrate with great accuracy can be measured because the substrate temperature is the magnetic Properties influenced to a large extent. In particular, it is with regard to Series production required, the temperature distribution in the substrate holder too monitor and, if it scatters too much, correct it to reduce the spread increase.

In the second method, the strength is one emitted by a measurement object Infrared beam with a specific particular wavelength detected such that the Temperature of the object using the emissivity of the object is taken from a reduction table. The relationship between the radiance of a black body and the infrared spectral distribution As is well known, in a 1: 1 relationship in accordance with Planck's law Radiated.

With this procedure, the temperature of the object can be touched can be measured as in Japanese Unexamined Patent Publications No. 60-1 31 430, 62-79 641, 63-24 133, etc. Both Unexamined Japanese Patent Publications Nos. 60-1 31 430 and 62-79 641 however, the infrared beam is directed onto a detector, the Temperature by using an optical fiber such as one Quartz, which is the measurement of a point. By the way in the publication No. 63-2 17 238 described above, the temperature distribution of the substrate by measuring the infrared strength by scanning the Determined substrate. Accordingly, this method is two-dimensional Measuring a temperature distribution unsuitable. In other words, it is difficult with the conventional temperature measurement techniques in a steamer, in the context of the vacuum evaporation process, the CVD process, of the sputtering method and the like is used, the temperature distribution to measure over a wide area.

On the other hand, it is well known that an infrared imager, e.g. i.e., one So-called infrared camera (or a thermography device) as a means of measuring  a two-dimensional temperature distribution is used. With such a Instrument are those emitted by an object to be measured Infrared rays recorded as a two-dimensional infrared image and based on it the infrared strength of the image converted into a temperature, creating a Temperature image is obtained.

This is based on the use of a conventional infrared imaging device However, based temperature measurement methods suffer from the following shortcomings. Strongly scattered light (scattered light) of the infrared radiation occurs in the vaporization chamber from other highly heated sources than the one to be measured Object is emitted, such as from a plasma, a Infrared heaters, a jacket heater, and the like. It is therefore impossible to get one to get good infrared image. It also has an aluminum substrate with a NiP plating, used as a sputter magnetic disk substrate, metallic Shine or an iridescent glaze and is polished like a mirror surface. Be So emissivity is small, and the strength of that emitted from the substrate Infrared ray is low. Conversely, the substrate reflects stray light. The consequence is that a satisfactory infrared image cannot be obtained. Continue in the event that the infrared imaging means is actually in the evaporator the window through which the infrared beam passes is used during the vapor deposition process dirty, so that the measurement results are gradually not exact.

If, on the other hand, there is a temperature gradient in the heated substrate the risk that the same gradient after evaporation also in the film-physical properties occurs. For example, differ in the case a magnetic disk the magnetic properties of the magnetic films from each other if a temperature gradient occurs in the plate, so that the electrical output signal an undesirable wave-like shape along a Has revolution of the magnetic plate. The properties of the also vary magnetic material deposited on the magnetic disk substrates in film form strong if a temperature gradient in the palette on which a variety of Disk substrates are supported for film coating, is generated.

It is accordingly an object of the present invention to provide an infrared temperature measuring device to create where the temperature distribution over in a non-contact manner  measured a large area using an infrared imaging device can be.

Another object of the present invention is to provide a satisfactory one Image constructed in this way by eliminating those emitted by a heating element strong infrared radiation, while enabling temperature measurement through the infrared radiation emitted by the substrate, with reduction of the temperature measurement error.

Another object of the invention is to provide a method with whose help is the temperature of the moving in a vacuum chamber By measuring the infrared radiation emitted by the substrate on the Outside of the vacuum chamber can be measured easily.

Another object of the present invention is to provide a steaming device that with a heater and an infrared temperature measuring device is provided and a method for controlling the heating for the purpose of regulating the Applies heat of the heating element, so that the substrate The temperature as a whole is close to the evenly set temperature located.

Another object of the invention is to provide a magnetic disk substrate where in the magnetic disk substrate surface a distribution of magnetic properties by applying the film to the magnetic disk With the help of a steaming device does not occur, this device with a Heating device and an infrared temperature measuring device is provided and a heating control method for controlling the heat output of the heating element applies, so that the temperature of the substrate as a whole is close to that evenly set temperature.

These and other goals are achieved: by means of eliminating infrared Scattered radiation, these means to reduce other infrared scattered rays in the infrared radiation to be introduced into the infrared image device serve as the infrared rays emanating from the measurement object; and by a black one Body-acting furnace, hereinafter referred to as black furnace, for producing one Reference temperature has been reached for the calibration of the device. In detail  The following measures have been taken: (1) To avoid the optical path of others Objects as infrared emitted to the object to be measured in temperature Keep stray radiation away as well as absorb the stray light and the reflection eliminating the infrared rays on the wall of the optical path will Wall made practically the surface of a black body, so that the Emissivity of the wall is close to 1 and that as surfaces of a black Body-specific areas to keep the measurement object free from infrared Stray radiation can be cooled; (2) A major part of the optical path is kept under vacuum, with a window with high transmittance for Infrared rays and maximum compressive strength at one end of the under vacuum held optical path is arranged, and wherein the attenuation of the Measurement object emitted infrared rays is prevented, so that a satisfactory Infrared image is obtained; and (3) The black body furnace, in The following black body furnace is called, compared to the infrared imaging device arranged and the reference temperature is generated in the black body furnace to calibrate the infrared temperature measuring device.

First, the black body and emissivity should be explained. The "black body" is an object that all sent out, entering the object Can absorb energy; at the same time the object has a larger one Emission energy than any other object of the same temperature. The "emissivity" expresses the ability of the object to emit energy and is represented by a ratio value that relates to that of the black, kept at the same temperature, body emits energy. The at a temperature T existing emissivity ε is given by the following equation shown:

Emissivity ε = (emitted by the object at temperature T. Energy) / (from the black body at the temperature T emitted energy) (1)

Accordingly, the emissivity of the black body is 1.

In the infrared temperature measuring device described above, that is to keep it clear of infrared rays emitted from objects other than those of the measurement object  optical path designed so that the scattered infrared rays are not directly in the infrared imaging device occur. However, the infrared rays are in the scattered and reflected optical path and thus to scattered light that in the Infrared imaging device enters and causes a serious problem. For this Basically, the walls of the optical path are treated accordingly made to the surface of a black body, in the following surface blackening treatment called to increase the emissivity and the infrared To absorb stray radiation through the walls. Those absorbed by the wall Infrared rays are converted into heat and heat the optical path educational games. For this reason, the lots are cooled and the Heat is dissipated to the outside from the optical path. It is important that as black body-acting surface of the optical path, in the following Called blackbody surface, to eliminate the stray light from the Wall of the optical path emitted infrared rays at low temperature to keep. Furthermore, to avoid errors due to absorption of the Infrared rays from the carbonaceous contained in the atmosphere Gas or water vapor is the major part of the optical path under vacuum operated. The window with high infrared transmission is on the border between atmosphere and vacuum. As a result, it is possible to get a good picture to achieve the infrared imaging device, which in turn is used to measure the observed Temperature distribution is arranged in the atmosphere.

The blackbody is also opposite the process chamber Infrared imaging device arranged, the reference temperature of the same by the infrared imaging device is measured so that it is possible to use the infrared temperature measuring device to calibrate and compensate for measurement errors. The corresponding The procedure will be explained.

The energy E emitted by the object held at a temperature T. is determined by the following equation (2):

W = ε × 8.37 T⁴ (2)

where ε is the emissivity and σ is the Stefan-Bolzmann constant. The Attenuation of the amount of infrared radiation passing through the infrared window, caused by the contamination of the infrared window is caused by the  Damping coefficient K (0K1) shown. The state in which the Window is not contaminated is represented by K = 1. The infrared temperature measuring device and the blackbody furnace are in a symmetrical relationship. The The states of the two components are therefore the same. Because the infrared window are made of the same material, those that pass through both windows Infrared rays weakened to the same extent. Thus, that of the at the temperature T kept black body emitted infrared energy Wk that passes through the two infrared windows and through the infrared temperature measuring device is measured, represented by the following equation (3):

Wk = K₂εbσT⁴ (3)

where ε × b is the emissivity of the black body. In the event that the Contamination of the window is not included, the temperature Tk of the black body by backward calculating equation (2) with respect to Size wk can be won. Accordingly, the following relationship applies (4):

Wk = εbσTk⁴ (4)

Tk is the temperature of the black body including the through the contamination of the infrared windows. K becomes from the Equations (3) and (4) are determined using the following relationship:

K = Tk⁴ / T² (5)

Since T is actually the displayed temperature of the black body and Tk is the Temperature of the black measured by the infrared temperature measuring device Body, K can be determined by experiment. If the value K is determined, the temperature of the object arranged in the process chamber is determined by expressed the equation below because the only window between Object and infrared temperature measuring device is inserted. The formula is:

W = KεσT⁴ (6)

In equation (6), the expression Kε is given by the factor according to the equation (7) replaced, equation (8) results in the same form as equation (2):

ε ′ = Kε (7)

W = ε′σT⁴ (8)

It is possible to use the one used for the measurement in the infrared temperature measuring device Change emissivity. Accordingly, the contamination of the Infrared window estimated using the blackbody oven. The Damping coefficient K is used to compensate for the emissivity and the errors caused by the contamination of the windows.

In order to achieve the goals described above, it is necessary to have means for Measurement of the temperature of the substrate in the heating device of the Vaporizer to provide. In the method for measuring the temperature distribution of the substrate, the infrared camera takes the one emitted by the substrate Infrared image, and it is then converted into a temperature image of the substrate. The process works very well.

It is easy to visually see the temperature distribution over the temperature image detect.

For this purpose, the infrared camera to the direct light and the reflected light of the to avoid infrared rays emitted by the heating elements at a distance arranged by the heating elements. If necessary, to carry out the An interception plate is used to measure the temperature to prevent direct penetration Light or the reflected light from the heating elements To prevent infrared rays from entering the infrared camera.

To capture the substrate in the vacuum chamber, there is a window in the Vacuum chamber arranged, which has a high infrared transmittance and consists of Si or the like and on which an anti-reflective film is attached. Next is the inner wall of the vacuum chamber, which is the optical Infrared path forms, subjected to a surface blackening treatment (enlarge  emissivity) so that the infrared rays do not pass through the inner Wall are reflected. This makes it possible to get a good picture without being distracting Achieve influence of the heating elements and a temperature image for measuring the To obtain temperature distribution of the substrate with high accuracy.

A method to improve the temperature distribution of the substrate with a relatively large area of the substrate moving through the vacuum chamber.

In the case of a heater, the infrared temperature measuring device measures in the event that the individual heating elements shared a group the function of the individual Form temperature control, the temperature distribution of the entire substrate in order the temperature difference compared to the intended set temperature values to calculate. As a result of the calculation, the heating controllers control the Heat emission of the relevant heating elements according to this temperature distribution, so that no arbitrary temperature distribution arises.

The heating controller and the infrared temperature measuring device are used in the Thin film evaporator heater applied. The temperature distribution measuring device and the heating controllers are especially for one device Evaporation of substrates with a relatively large surface area, such as one Magnetic disk or the like, by the sputtering method, or the like, applied. It is thus possible to measure and the heat emission of the substrates following the measurement substrate corresponding to the Controlling temperature image information through feedback to a heating control bring about, which results in an even and stable temperature distribution.

Further features, advantages and possible uses of the present Invention emerge from the following description of exemplary embodiments in connection with the drawing.

Fig. 1 is a block diagram illustrating a Infrarottemperaturmeßgerät according to a first embodiment of the invention;

Figs. 2A and 2B show a vacuum channel and an optical path, in which FIG 2A representing a top view and Figure 2B is a front view..;

Figure 3 is a table of infrared transmissive window material;

Fig. 4 shows a diagram for evaluating the surface blackening treatment;

Fig. 5A and 5B show the field of view through a vacuum channel and the effect of Oberflächenschwärzungsbehandlung, wherein FIG 5A 5B show the temperature distribution before and FIG Oberflächenschwärzungsbehandlung the temperature distribution after Oberflächenschwärzungsbehandlung..;

Figure 6 illustrates the relationship between infrared temperature measurement and thermocouple temperature;

Fig. 7 shows the locations at which the thermocouple is mounted in the field of view;

Fig. 8 shows a precision distribution of the infrared temperature measurement relative to the thermocouple temperature;

Fig. 9 illustrates a transport evaporator to which the infrared temperature measuring device and the black body for calibration are connected;

Figures 10A and 10B illustrate views of the viewing flange and optical path;

Figs. 11A and 11B illustrate views of the transport evaporator, Fig. 11A being a plan view and Fig. 11B being a front view;

Fig. 12 illustrates the relationship between the image of a single field of view and the infrared camera (partial view) and the image of the entire palette (composite image);

Fig. 13 shows the accuracy of the infrared temperature measurement at the initial state of the infrared window;

FIG. 14 illustrates the calibration of the precision of the infrared temperature measurement through the black body in the contaminated state of the infrared window;

Fig. 15 shows the accuracy of the infrared temperature measurement as a function of the temperature of the black body when the measurement accuracy is reduced due to the contamination of the infrared window, and the correction of the reduction in the measurement accuracy;

FIG. 16A and 16B are views for illustrating an improved vacuum channel represents wherein 16A is a plan view and Figure 16B is a front view reflect..;

Fig. 17 shows the temperature distribution of the improved vacuum channel;

Fig. 18 is a block diagram illustrating a Infrarotbildmeßgerät according to a fourth embodiment of the invention;

Fig. 19 illustrates a Meßablaufdiagramm for measuring the temperature of the image, on stepwise movement of the substrate is;

Fig. 20 illustrates a data arrangement during the composition of the image in the main controller;

Fig. 21 is a measurement flow chart for measuring the temperature image while the substrate is being fed at a constant speed;

FIG. 22A and 22B is a partially broken front view and a side view of a heating apparatus according to an eighth embodiment of the invention;

Fig. 23 is a schematic view of a control system for controlling the heat output of the heaters attached to the temperature measuring device;

Fig. 24 is a temperature distribution diagram illustrating the measurement result obtained by the infrared image measuring device according to the invention;

Fig. 25 is a temperature distribution diagram similar to the diagram of Fig. 24, illustrating the temperature distribution of the substrate obtained by controlling the temperature distribution;

FIG. 26A and 26B illustrate temperature distribution diagrams, illustrating the actual measurement result of the temperature distribution using isothermal curves and the heating control method according to a ninth embodiment of the invention for adjusting the temperature distribution uniformly set temperature due to said result;

FIG. 27A and 27B illustrate a cross-section in plan view and a cross section in front view for illustrating a sputtering apparatus according to a tenth embodiment of the invention;

Fig. 28A is a cross-sectional plan view showing the heating chamber illustrated in Figs. 27A and 27B;

Fig. 28B is an enlarged cross-sectional view taken along curve XXVIII-XXVIII of Fig. 27A;

Fig. 29 is a temperature distribution diagram showing the pallet and the substrates;

Fig. 30 is a temperature distribution diagram showing the pallet and substrates in the case of temperature distribution control;

FIGS. 31A and 31B are characteristic diagrams showing the change in the average temperature of the pallets, respectively when the temperature control is absent and when it is present;

Fig. 32 is a perspective view of the pallet that has a timing function for temperature measurement;

Fig. 33 illustrates the view of a heating control structure for adjusting the heat output by adding a temperature meter;

FIG. 34A illustrates the example of the relationship between the receiving range of the temperature of the image, the fixed points of the distribution measurement, and the installation places of the heating elements;

FIG. 34B and 34C show monitor images of the main controller;

Fig. 35 is a flowchart showing the steps for controlling heating during temperature measurement;

Fig. 36 is a front view showing the sputtering device illustrated in Figs. 27A and 27B with the additional function of recirculating the pallets;

FIG. 37A and 37B are a front view in the transverse direction and a front view is in the longitudinal direction showing the sputtering apparatus with plate charge;

Fig. 38A is a longitudinal sectional side view of the apparatus shown in Figs. 37A and 37B;

Fig. 38B is a front cross-sectional view of the apparatus shown in Figs. 27A and 27B;

FIG. 39A and 39B are a front view in the transverse direction and front views in longitudinal direction of a rotary drum apparatus;

FIG. 40A is a distribution diagram showing the temperature and the coercive force is in the pallet;

FIG. 40B, 40C and 40C are views for illustrating the temperature distribution is the 8-inch plate, and the associated parameters; and

FIG. 40E represents a distribution diagram of a Tonkopfausgangssignals.

Preferred embodiments of the invention are described below.

Embodiment 1

Fig. 1 shows a structure in which an infrared temperature measuring device according to a first embodiment of the invention is mounted on a fixed direct steaming device. A vacuum process chamber 2 is kept at the vacuum level by evacuating gas from the chamber with the aid of a refrigeration pump 1 . A pallet, ie a substrate holder 4 , on which substrates and an infrared heating element 3 are mounted, is arranged in the vacuum process chamber 2 . The infrared heating elements 3 bring the substrates to temperature. A vacuum channel 6 is attached to the vacuum process chamber 2 with the aid of a vacuum flange 5 . Since the vacuum flange 5 is constructed so that it can be exchanged for a target flange or for a heater flange of the vaporization device, the infrared temperature measuring device can be easily assembled as a unit, provided the flange-mounted unit has the same flange. An infrared window 7 is attached to the interface of the vacuum channel 6 with the outside atmosphere. An infrared camera 8 is designed to take an infrared image of the pallet 4 and the substrate in the process chamber 2 through the infrared window 7 . The infrared camera 8 , which is generally available commercially, is, for example, a camera in which an indium / antimony quantum sensor (with a wavelength of 3 to 5.4 micrometers) is used as the infrared sensor. In this case, it is necessary to fill the sensor with argon gas, which is supplied from the reservoir 9 under high pressure. A control system for the infrared camera 9 is generally identified by the reference number 13 . The infrared image is displayed on a cathode ray tube CRT 10 via an image processor 11 and stored in an image acceptance memory 12 . The image projected onto the CRT 10 can be output to a video printer 14 or the like.

Figs. 2A and 2B illustrate the vacuum channel 6 in detail. The vacuum channel 6 is thin-walled and funnel-shaped in order to prevent the scatter or the infrared scatter radiation within the process chamber 2 from entering the infrared camera. Meanwhile, the infrared scattered radiation can be shielded more effectively if the light shielding structure is placed closer to the measurement object which emits the infrared radiation (in the present case, the object is the pallet 4 with the substrates). For this purpose, an interception plate 15 is attached. The interception plate 15 , the vacuum flange 5 and the vacuum channel 6 form an optical path for the infrared rays. However, in the event that these components are made only of a material such as stainless steel or an aluminum alloy, and that the metallic surface is exposed to the optical path, the amount of scattered light is increased by reflection of the infrared rays on the wall of the optical path. For this reason, the channel is subjected to surface blackening treatment in order to increase the emissivity of the wall of the optical path. Because the wall of the optical path has been subjected to surface blackening treatment, the infrared scattered radiation is hardly reflected in the optical path, but is absorbed into the wall. The infrared rays absorbed by the wall are converted into heat. For this purpose, the vacuum flange 5 and the vacuum channel 6 are cooled by cooling tubes 16 in order to keep the wall temperature of the optical path at a low level and thereby to reduce the amount of infrared radiation caused by the black body wall. In this embodiment, since the measured temperature ranges from 50 to 300 ° C, water is used for cooling, which is kept below 20 ° C, and as a material for the vacuum channel 6 , and the like, an aluminum material (A5052, A6061, A2017 , or the like), which has a high thermal conductivity. However, it is also possible to suppress the aggressiveness generated by the absorption of the infrared rays in the carbon dioxide-containing gas in the atmosphere and in the steam by keeping almost the entire optical path with vacuum channel 6 under vacuum. The window 7 through which the infrared rays pass is attached to the outside atmosphere at one end of the vacuum channel 6 . The window must be transparent to infrared rays and have pressure resistance. The infrared camera 8 is arranged outside the window 7 which is transparent to infrared rays. A mechanism 18 for adjusting the camera setting is used to adjust the infrared camera 8 . A diaphragm 17 serves the purpose of preventing the particles intended for vapor deposition from adhering to the infrared window 7 when there is no temperature measurement.

The materials used for the transmissive infrared window 7 will now be described. Fig. 3 lists the window materials for infrared rays (see Window Material for Infrared Rays, temperature measuring technique document, Japan Avionics Co., Ltd., 1983). In the present embodiment, the temperature measuring range extends from 50 to 300 ° C., the material having to have pressure resistance at the same time, since the window 7 which is transparent to infrared radiation is inserted in the vacuum chamber. Because of these two factors, silicon with an anti-reflective film, germanium with an anti-reflective film and sapphire are used as window material. The stability of the emissivity was examined by concrete heating of the substrate. As a result, it was found that none of the three materials is superior to the other, so each of them must be used. Accordingly, silicon with an anti-reflective film is used in the subsequent embodiments of the invention. The compressive strength is now treated. The infrared-transmissive window 7 is required to be resistant to pressure differences between the pressure in the process chamber and the atmospheric pressure. The compressive strength of the window 7 which is permeable to infrared rays is determined by the material and by the shape of the window. The silicon infrared transmission window 7 used in the present embodiment has a size of 93.5 mm (long side) × 39.0 mm (short side) × 5.0 mm (thickness), taking into account a sufficient safety factor. The pressure resistance of the window is 5.4 kg / cm² and is therefore sufficiently high compared to the atmospheric pressure.

The purpose of surface blackening treatment is to reflect the wall to reduce the optical infrared path and thus the infrared scattered radiation to absorb through the wall of the optical path. That's why it is beneficial if the surface of the black body has a low reflectance and has a high emissivity.

Fig. 4 illustrates the Bewertungsresulate the Oberflächenschwärzungsbehandlung. The measured samples were made of metal, which had a transmittance of about 0. The following applies accordingly: emissivity ε + reflectance R = 1. However, the measurement results did not always match this formula. This is due to the fact that the degree of reflection is influenced not only by the material on the surface, but also by the surface roughness. For this reason, it is also necessary to reduce the reflectance by a surface roughness treatment such as a sandblast. In the present embodiment of the invention, a matting treatment was carried out. It is apparent from Fig. 4 that the emissivity of the black Cr plating, the black inorganic alumite and the black NiP plating is large and equal to or larger than 0.85. The fact that the surface blackening treatment is necessary to remove the infrared rays will now be described. FIGS. 5A and 5B show the effects of the performed on the wall of the optical path in the form Oberflächenschwärzungsbehandlung isothermal curves. The elongated rectangular shape represents the area of the field of view 40 of the infrared image in the vacuum channel. FIG. 5A shows the temperature distribution before the blackening treatment of the surface, while FIG. 5B shows the temperature distribution after the blackening treatment of the surface. The object to be measured was an aluminum plate on which a NiP plating with the emissivity ε = 0.18 was attached. The temperature measured by a thermocouple at each of the measuring points indicated in FIG. 7 was 200 ° C. without a temperature gradient occurring in the aluminum plate. The temperature in the infrared image is as follows. In the state shown in FIG. 5A before the surface blackening treatment, the temperature at the ends of the field of view through the vacuum channel was 230 ° C., as indicated by the isothermal curve 45 , while the temperature at the peripheral Section of the field of view was 215 ° C, as indicated by the isothermal curve 44 . The temperature therefore decreased towards the middle section of the vacuum channel. The high temperature portion 93 (205 ° C) of the field of view will be described later in connection with the third embodiment of the invention. Those sections which had a temperature of 200 ° C. or more measured with the thermocouple were strongly affected by the infrared scattered radiation. In the state after the blackening treatment of the surface, the high temperature area of the central portion of the field of view, which was strongly affected by the infrared scattered radiation, was kept at a temperature of 210 ° C, which is indicated by the isothermal curve 43 , while the peripheral portion of the field of view was maintained by the Vacuum channel 6 was kept at a temperature of 205 ° C, which is indicated by the isothermal curve 42 . In comparison with the temperatures of the infrared image as a whole, as shown in Figs. 5A and 5B, there was an improvement in the stray light deterioration, so that it was possible to measure the temperature distribution with a measurement accuracy of 10 ° C or below. In the above embodiment, the black NiP plating was used for the surface blackening treatment. However, the black Cr plating and black alumite can also be applied to achieve essentially the same result.

The emissivity of the wall of the optical path is treated below. The infrared rays emitted by high-temperature objects, such as the measurement object, are reflected several times on the wall of the optical path and thus become scattered light. If the infrared rays in the temperature measurement range of 50 to 300 ° C are reflected twice on the wall of the optical path and enter the infrared camera 8 , the emissivity required to suppress the field caused by the scattered light of about 10 ° C is calculated as follows:

ΔT is the temperature error and ΔW is the change in those generated by ΔT Emission energy.

However, it turns out for the temperature error that ΔT = 10 K (10 ° C), and that the Temperature measuring range is defined by T = 323 to 573K (50 to 300 ° C), see above that the higher order terms (starting with the second term) are neglected can be. This gives the following relationship (Equation 10) between the emission energy change ΔW and the temperature error ΔT:

Since the consideration is directed to the case that the infrared rays turn on twice the emissivity is the wall of the optical path given by the following equation 11:

According to this equation, it is 50 for the temperature measurement range up to 300 ° C required emissivity 0.65 to 0.74. With the actual measurement it is assumed that the number of reflections of the scattered light at the Wall of the optical path can exceed two reflections. The The measuring temperature of the test object normally does not exceed 300 ° C. Consequently an emissivity value of 0.8 or more is effectively sufficient.

It is a fact, however, that those emitted by the high temperature object Infrared rays already through a single reflection on the wall of the optical Paths get into the infrared temperature measuring device and become stray light. The  The effect of this scattered light reflected only once is greater than that of the repeatedly reflected scattered light. In this case it is to suppress the Temperature error up to 10 ° C required emissivity by the following Given equation 12:

In the temperature measurement range from 50 to 300 ° C, the emissivity ε is between 0.88 and 0.93. It is of course advantageous to increase the emissivity of the wall of the optical path. However, it is difficult to achieve a blackened surface (ε0.93) with a higher value, as can be seen from FIG. 4. However, in the event that the interception plate 15 is provided, as is the case with the infrared temperature measuring device described above, the high-temperature infrared emission sources other than those formed by the measurement object are fully shielded. For this reason, the scattered light emitted by the high-temperature infrared emission sources and entering the detector is reduced to the infrared radiation emitted by the measurement object with only one reflection on the wall of the optical path. Since the infrared emission sources causing the problem are limited to the measurement object, the infrared rays emitted by the measurement object can thereby be effectively intercepted and enter the infrared camera 8 after only a single reflection on the wall of the optical path, as shown in the third embodiment of the invention , The shape of the interception plate 15 and that of the vacuum channel 6 , which forms the optical path, can be improved. Some portions of the surface blackening treatment surface are maintained at high temperature in the process chamber. For this reason, after the blackening treatment of the surface, it is advantageous to carry out degassing by a long-lasting treatment at a temperature of 200 ° C or more.

Fig. 6 illustrates measurement examples of infrared temperature measurement accuracy (= infrared temperature thermocouple temperature) with respect to three types of metal surfaces with different emissivities (ε = 0.18, 0.4 and 0.95), and essentially in the range from 50 to 300 ° C the infrared temperature measuring device described above. In the case of emissivity ε = 0.18, the infrared temperatures in the range below the thermocouple temperature of 100 ° C or less are approximately 10 ° C lower than the actual temperatures, while the infrared temperatures in the temperature range above the thermocouple temperature of 270 ° C or more are approximately 5 ° C higher. In the case of the metal surface with emissivity ε = 0.95, the infrared temperatures in the range of the thermocouple temperature of 100 ° C or less are approximately 5 ° C lower than the actual temperatures, while the infrared temperatures in the range of the thermocouple temperature of 300 ° C or more are approximately 5 ° C higher than the actual temperatures. This shows that the accuracy of the infrared temperature measurement is somewhat reduced for objects with a low emissivity. For the range from 50 to 300 ° C, however, the temperature can be measured in a range of ± 10 ° C according to the above embodiment without contact.

One of the goals of the infrared temperature measuring device described above is to measure the temperature distribution. For this purpose, the measurement accuracy with regard to the temperature distribution in the field of view of the infrared channel was confirmed. Fig. 7 shows the positions of the thermocouple attached in the field of view of the infrared channel. The object to be measured was an aluminum plate, which was provided with an NiP plating with an emissivity ε = 0.18. Fig. 8 shows the results regarding the infrared temperature measurement accuracy (= infrared temperature thermocouple temperature). At a thermocouple temperature of 50 ° C, the infrared temperature was about 10 ° C lower. With a thermocouple temperature of 280 ° C, the infrared temperature was about 10 ° C higher. However, the distribution of the infrared temperatures was within 5 ° C at each measuring point at which the temperature was measured. The infrared temperature distribution in the field of view of the vacuum channel 6 was sufficiently small compared to the measuring accuracy of the infrared temperature of ± 10 ° C.

With such a structure, the measuring temperature range of 50 to 300 ° C. with an emissivity ε of approximately 0.1 or more an infrared temperature measuring device created that the temperature and temperature distribution with can measure an accuracy of ± 10 ° C. By the way, that's what needs to be measured Object is not limited to metals, but can also refer to glasses,  Ceramics, plastics and the like extend. The temperature distribution or the temperature gradient of these materials can also be measured.

According to the present invention, the openings of the interception plate 15 and the vacuum channel 6 have a narrow, elongated shape in view of the fact that a large amount of stray light is emitted by the infrared heater and that the measuring area is covered by a rectangular field, which in is indicated by reference numeral 40 in FIGS. 5A and 5B. If the stray light can be neglected, the opening portions of the intercept plate 15 and the vacuum channel 6 can be expanded in accordance with the range of the field of view of the infrared camera 8 , so that the field of view of the vacuum channel 6 also becomes larger. Furthermore, the measuring temperature range is not always limited to 50 to 300 ° C. In order to lower the lower limit of the measuring temperature range, a liquefied gas is used as the coolant, so that the temperature of the wall of the optical path can be lowered beyond the lower limit of the measuring temperature range. On the other hand, with respect to the upper limit of the measuring temperature range, the temperatures of the interception plate 15 , the vacuum flange 5 and the vacuum channel 6 in the present embodiment are also kept at a low level by cooling, so that a temperature exceeding 300 ° C can be measured. The cooling capacity is also increased. The temperatures of the interception plate 15 , the vacuum flange 5 , the vacuum channel 6 and the infrared-transmissive window 7 are kept at a low level. The materials forming the interception plate 15 , the vacuum flange 5 and the vacuum channel 6 are replaced by materials with high heat resistance. For example, considering the measurement conditions, aluminum is replaced by stainless steel. The material of the infrared-transmissive window is replaced by materials such as silicon with anti-reflective film to sapphire. This means that even higher temperatures can be measured. To increase the measuring accuracy, cooling the interception plate 15 to reduce the amount of scattered light is also helpful.

Embodiment 2

The following is a calibration method for the infrared temperature measuring device described above according to a second embodiment of the invention.  

The structure of the device is first described. FIG. 9 illustrates the situation in which a black body furnace 27 is attached to the transport separation device opposite the infrared temperature measuring device. In Fig. 9, the same reference numerals are used to designate the same components and elements as in Figs. 1 to 2B. A viewing flange 26 is mounted at a point where it faces the vacuum channel 6 of the process chamber 2 . In the same way as the vacuum channel 6 , an interception plate 15 and an infrared window 7 are attached to the viewing flange 26 . In order to reduce the amount of scattered light, the intercepting plate 15 and the visible flange 26 were subjected to a matting treatment and a surface blackening treatment; and further the viewing flange 26 is cooled with water. FIG. 10A and 10B show details of the Sichtflansches 26th The interception plate 15 serves to shield the scattered light and, moreover, to prevent the target sputter particles from sticking to the infrared window 7 . When the calibration process of this embodiment, it is required that the contamination state of the two infrared windows 7 is similar. For this reason, the structure of the intercepting plates 15 is symmetrical with respect to the target object (which is located within the film coating chamber of a target flange 52 ) on the side of the vacuum channel 6 and the viewing flange 26 . In order to further put the two infrared windows in the same contamination state, it is best if the optical paths between the interception plates 15 and the infrared windows 7 are arranged symmetrically. However, in the present embodiment, the arrangement is not symmetrical. However, in view of the fact that the distance between the opening portion of each intercept plate 15 and the target object is sufficiently large, the opening portion is small compared to the above-mentioned distance. The arrangement was further improved so that the particles atomized by the target object do not directly hit the infrared window 7 . It is possible to keep the state of contamination of the two infrared windows at the same level only by symmetrically designing the interception plates 15 . It is also advantageous to make the contamination state of the surfaces of the infrared windows 7 uniform. For this reason, the distance between the opening portion of each intercept plate 15 and each infrared window is larger; the area within the interception plate 15 of the visible flange 26 or the vacuum flange 5 is larger and smaller; and each infrared window 7 is also smaller in size, so that the contamination state is highly likely to be the same for each infrared window 7 . In the present embodiment, the aperture 17 for preventing window contamination is not used to maintain the contamination state of the two infrared windows at the same level. However, it is advantageous to use the screen 17 to prevent window contamination when they cooperate on the side of the infrared channel 6 and the viewing flange 26 .

The functions of the transport evaporator and the infrared temperature measuring device will now be described with reference to FIGS. 11A, 11B and 12. As for the transport evaporator, a pallet loaded with the substrates 60 is placed in the substrate loading chamber 31. As the pallet loaded with substrates moves from the substrate loading chamber 31 to the substrate unloading chamber 36 , the substrates 60 are heated in a substrate heating chamber 32 and in respective vapor deposition chambers 33 , 34 and 35 continuously coated with a chrome film, a magnetic film and a protective film. The infrared temperature measuring device is arranged between the heating chamber 32 and the chrome film coating chamber 33 for measuring the substrate temperature before the chrome film coating. When the pallet 61 is moved in front of the infrared temperature measuring device, photosensors 28 and 29 (see FIGS. 9 and 10) detect the pallet 61 and the infrared camera 8 begins to take an image continuously over a time interval. Since the emissivity of the magnetic disk substrate 60 differs from that of the pallet 61 , the infrared camera takes two infrared images that differ in emissivity using the emissivities of the disk substrate 60 and the pallet 61 . Furthermore, the field of view of the infrared camera 8 is kept small, so that only a partial image 62 is recorded as a single image, as shown in FIG. 12. For this reason, if the images subdivided according to a single pallet in accordance with the passage of the pallet 61 have been recorded, the overall image of the pallet is composed of the partial images 62 by a control and data processing system 24 . Fig. 12 shows a state in which nine partial images are composed to form the overall image of the pallet. Finally, two emissivity-different images composed using the emissivity of the magnetic disk substrate 60 and the pallet 61 can be obtained. The control and data processing system 4 performs a related control of the infrared camera 8 and the data processing.

According to the present embodiment, the infrared temperature measuring device for measuring the substrate temperature before the chrome plating is arranged between the substrate heating chamber 32 and the chrome film coating chamber 33 . However, the vacuum flange 5 of the infrared temperature meter and the view flange 26 are designed to be interchangeable with the target flange 52 so that the mounting position of the infrared temperature meter can be easily changed. For example, if the Infrarottemperaturmeßgerät is mounted in a position of the target flange 53, which is the Magnetfilmbedampfungskammer 34 closest in the Chromfilmbedampfungskammer 33, the substrate temperature can be confirmed by the chromium film deposition, so the temperature rise of the substrate by the plasma. At the same time, this measurement makes it possible to confirm the substrate temperature before the magnetic film is applied. Similarly, if the infrared temperature meter is located in a position of the target flange 54 that is at the foremost portion of the carbon film vapor deposition chamber 35 , the substrate temperature can be measured prior to the carbon film deposition. The fact that the substrate temperatures can be measured at any point in the film coating process is very effective for the development of the coating process.

Next, the calibration method of the infrared temperature measuring device will be described. A reference temperature is generated by the black body furnace 27 mounted on the viewing flange 26 , so that it is possible to calibrate the infrared temperature measuring device by measuring the temperature of the black body furnace with the infrared temperature measuring device. Fig. 13 illustrates the infrared temperature measurement accuracy (infrared temperature - temperature of the black body furnace) with reference to the black body furnace 27 , on the basis of which the measurement is carried out when the infrared temperature measurement device is mounted on the transport steaming device. Referring to FIG. 13, the measurement is performed with an accuracy of ± 3 ° C. It is confirmed that the infrared temperature meter is operating normally. The transport steaming device has worked on the infrared temperature measuring device for a long period of time, approximately one year or longer, after installation. Then the measurement was carried out. Fig. 14, the Infrarottemperaturmeßgenauigkeit illustrated on the basis of the black body furnace 27th At the black furnace temperature of 50 to 250 ° C, the infrared temperature measurement accuracy was in the range of -10 to -50 ° C and was lowered. Fig. 15 illustrates the infrared temperature measurement accuracy based on the thermocouple by small circles with respect to the aluminum plate provided with NiP plating (emissivity ε = 0.18) under the condition mentioned. The infrared temperature measuring accuracy was reduced in the range from -10 to -15 ° C in the measuring range from 50 to 300 ° C. In order to compensate for the emissivity, if the mean value of the damping constant K is obtained by substituting the result shown in FIG. 14 in equation (5), the value of the constant is determined with K = 0.73.

If the emissivity is determined by applying the damping constant K = 0.73 Compensated according to equation (6), the emissivity is ε = 0.13.

Fig. 15, the Infrarottemperaturmeßgenauigkeit illustrates by small triangles, which was measured with reference to the thermocouple with emissivity ε = 0.13. The infrared temperature measurement accuracy is between -10 and + 10 ° C. It can be seen that the reduction in measuring accuracy caused by the contamination of the infrared windows can be compensated for.

In the present embodiment, the infrared imaging means is called Temperature detector of the infrared temperature measuring device used. The calibration procedure however, according to the present embodiment, can be effectively applied if the temperature measuring device works with infrared rays, for example in Shape of a radiation thermometer.

Embodiment 3

Embodiment 1 shows the possibility that the temperature distribution can be measured with an inaccuracy of ± 10 ° C. The reason why the accuracy cannot be improved is due to the reflection of the vacuum channel in the scattered light, as can be seen from FIGS. 5A and 5B. The following four problems are considered.

• (1) The temperature of the edge portion of the field of view observed through the vacuum channel is about 5 ° C higher than the temperature measured by the thermocouple, as indicated by the isothermal curve 42 of FIG. 5B.
• (2) As shown in FIG. 5B, there is a high temperature section indicated by the isothermal curve 43 .
• (3) As shown in Fig. 5B, there is a high temperature section 93 in the middle part of the field of view viewed through the vacuum channel.
• (4) As shown in FIG. 5B, there is a high temperature portion of stripes in the central portion of the field of view viewed through the vacuum channel, as indicated by the dashed curves 94 .

In order to reduce the amount of stray light in view of the problems (1) to (4), an optical path is created according to FIGS. 16A and 16B. An intercept plate 15a, a vacuum flange 5a and a vacuum channel 6a constituting the optical path are subjected to the matting treatment and the surface blackening treatment in the same manner as in the case of the embodiment 1 to cool the optical path. Since the vacuum channel shown in Fig. 2 has been narrowed, the scattered light generated in the edge portion of the field of view of the vacuum channel in connection with problem (1) is caused by the reflection on the wall of the optical infrared path and recorded by the surface of the measurement object, for example on the with the NiP plating aluminum plate (emissivity ε = 0.18), and passed into the infrared camera.

As shown in FIGS. 16A and 16B show, through the sheet interceptor 15 a, the vacuum flange 5 a and the vacuum channel 6 a defined space in comparison to the opening portion of the interceptor 15 a ready, whereas the wall of the optical path from the optical path is far removed the infrared rays pass through. It is therefore possible to reduce the influence of the reflectance of the wall of the optical path. In the first embodiment, in connection with problem (2), the high temperature portion indicated by the isothermal curve 43 in Fig. 5B becomes due to a flat portion of the contact surface between the vacuum flange 5 and the parallel part of the vacuum channel 6 with the pallet in the first embodiment and the Corner sections that are adjacent to the flat section. In the third embodiment of the invention shown in FIGS. 16A and 16B, the vacuum channel 6 a has no corner section and no flat section on the contact surface between the vacuum flange 5 a and the vacuum channel 6 a. In connection with problem (3), the high-temperature section 93 located in the center of the vacuum channel shown in FIG. 5A is generated by the reflection of the transparent infrared window 7 . As shown in FIGS. 2A and 2B show, the palette is compared with the and parallel to the infrared transmissive window. 7 For this reason, the infrared rays emitted by the measurement object are reflected at the window 7 which is transparent to infrared rays and projected onto the object to be measured, ie onto the mirror surface of the aluminum plate provided with the NiP plating. Accordingly, in the third embodiment shown in Figs. 16A and 16B, the transmissive infrared window 7 is chamfered so that an image reflected by the window does not get into the field of view to be measured, but on the wall of the surface blackened optical path. It is sufficient if the transparent infrared window is chamfered so that the reflected image of the window is not projected onto the measurement object, and in the case of the third embodiment the transparent infrared window 7 is chamfered at an angle of 10 °. In connection with the above problem (4), the high temperature portion indicated by the broken line in FIG. 5B is based on the reflection on the glass holder 92 shown in FIGS . 2A and 2B. As confirmed in FIG. 2B, the opening portion of the glass holder 92 is smaller in size than the opening portion of the vacuum channel 6 on the side of the transparent infrared window. Accordingly, the infrared rays that have passed through the transmissive infrared window 7 are reflected at the boundary between the window and the glass holder 92 and become scattered light. For this reason, in the third embodiment of the invention shown in FIGS. 16A and 16B, the opening sections of the interchangeable flange 91 and the glass holder 92 a in the vacuum channel are substantially wider than the opening section of the transparent infrared window 7 of the vacuum channel 6 a, so as to increase the reflection prevent.

The influence of the infrared scattered rays can be considerably reduced by the improvements mentioned above. Fig. 17 illustrates the measurement result of the device according to the third embodiment under the same condition as that in Figs. 5A and 5B. It has been found that the influence of the infrared scattered rays can be reduced by 2 ° C. By the generated at both ends of the field of view area of the vacuum channel high-temperature section 95 is caused by the action of the portions of the vacuum flange 5 a parallel to the pallet 4 in the interceptor 15 a (on the side of the optical path), as shown in Fig. 16B. In order to reduce the influence of the aforementioned section, the opening section of the vacuum flange 5 a is further enlarged; the parallel section is separated from the measurement object and further away, and the area of the parallel section is reduced.

In the vacuum duct of the third embodiment of the invention, the Blackbody furnace should be included in the calibration. Because in this embodiment the transparent infrared window is mounted at an angle, it is advantageous also the infrared window to be mounted on the viewing flange in the same way bevel.

In the first to third embodiments of the invention, the infrared temperature measuring device is to detect the infrared rays from the temperature too detecting object of the process chamber are sent, the measurement using the infrared imaging device, as well as for two-dimensional Measurement of the temperature distribution of the object and its temperature to be measured with means for eliminating scattering infrared radiation equipped to those that scatter infrared radiation in the in the infrared imaging means reduce incoming infrared rays from others Objects as the measurement object are sent through the optical path. It will that is, the infrared rays emitted by objects other than the measurement object interrupted. It is also possible through the infrared optical path eliminate falling infrared scattered radiation. Thus, the two-dimensional Temperature distribution of the test object without contact and with high accuracy be measured.

Furthermore, the state of contamination of the transparent infrared window can be detected will. The generated by the contamination of the transparent infrared window Mistakes can easily be made using the blackbody furnace during calibration be compensated.

An infrared temperature image measuring device according to a fourth embodiment of the invention is described together with the camera 104 with reference to FIG. 18, the temperature image being subdivided as a measurement object during the movement of the substrate 101 .

A flat substrate 101 as a measurement object is fed in a constant direction (in the direction indicated by the arrow) and stopped by a feeder system 102 under the control of a supply system controller 103 . A channel 105 , ie a sleeve-like structure with a rectangular opening, is arranged in front of the light-receiving section of the infrared camera 104 . The channel 105 serves to suppress infrared scattered radiation other than the infrared radiation emitted by the substrate 101 as the measurement object, ie it serves to interrupt the so-called scattered light. Therefore, the infrared range that can be captured by the infrared camera 104 at one time is limited by the image capture range given by the channel 105 .

The channel 105 of this embodiment has an elongated shape and runs perpendicular to the feed direction of the substrate 101 . Accordingly, the area of the image measured by a single image is limited by a frame with the corners a, b, c and d. The shape of the channel 105 can be selected in various ways, such as with regard to the shape of the substrate to be measured, the subdivision of the measuring area or area, and the environment in which the device is located. Since the device as a whole preferably has small dimensions, it is obvious that the distance from the end of the optics of the infrared camera 104 to the surface of the substrate 101 is in the range from approximately 20 cm to approximately 120 cm. The image capture area of the infrared camera 104 is preferably 120 ° or less so that no image distortion occurs.

The infrared camera 104 is connected to an Ar reservoir for cooling its image recording element by addiabatic expansion of the argon gas. In the present embodiment, the infrared camera 104 has a means for converting the infrared light intensity into a reduced temperature table with 16 levels. If the minimum temperature of the temperature table, the temperature range corresponding to a gradation, and the emissivity of the measurement object are set, the camera can convert the infrared image recorded into the temperature table set to 16 gradations and provide a color temperature image. The infrared camera 104 has 256 × 200 picture elements per picture. It is possible to recognize the temperature according to the number of picture elements.

The infrared camera 104 can also supply data to the main control device 107 only of the designated area of the temperature image recorded by it. The infrared camera 104 and the channel 105 are arranged on a longitudinal frame 106 . A drive system for the longitudinal frame 106 can move the infrared camera 104 and the channel 105 back and forth parallel to the substrate and in the direction perpendicular to the feed direction of the substrate.

The longitudinal frame 106 is connected to the longitudinal frame drive system 110 , which has a servo motor, an encoder and a brake, and can be positioned by a longitudinal frame controller 111 so that its speed and acceleration are controllable. When the main control device 107 supplies position data to the longitudinal frame control device 111 , the infrared camera 104 and the channel 105 are moved into the designated position. When a mark made in the substrate 101 for displaying the measurement position has been detected by the position detector 108 with the aid of the sensor 108-1 , the measurement starts.

In general, the control of the feeder system 102 is independent of the heating control device or the temperature measuring device. However, the temperature in the present device can also be measured if the substrate is fed step by step or is moved continuously at constant speed by controlling the feeder system 102 with the aid of the main control device 107 of the temperature measuring device.

The image information measured by the infrared camera 104 is an infrared image that is converted into temperature image information in the infrared camera controller 104-1 . The infrared camera controller 104-1 projects the temperature image onto an infrared camera monitor 104-2 and also provides data in response to a delivery request for temperature image data from the main controller 107 . The master controller receives an interrupt request from the position detector 108 and the controller of the delivery system and monitors the chassis controller 111 and the infrared camera controller 104-1 . Furthermore, the main control device 107 assembles the partially measured and temporarily stored temperature image information into a whole and supplies the assembled temperature image information to the monitor 107-1 . The main control device also ensures that the entire set of temperature image information is stored in an external memory 107-2 .

When the mark applied to the substrate 101 for designating the position of the temperature measurement range is detected by the sensor 108-1 of the position detector 108 during operation, the temperature measurement begins. The delivery methods for the substrate 101 include types, namely the step-by-step transfer by intermittently moving the substrate by a length which corresponds to the temperature measurement range in the feed direction for each operation; and the constant speed transfer for moving the substrate at a constant speed.

The temperature image measurement in the case of the step-by-step transfer is explained below with reference to FIG. 19. The feeder control system periodically, equidistantly and intermittently supplies substrates 101 using the feeder system 102 . When the position detector 108 detects the mark 109 on a substrate 101 , the main control unit 107 releases an interrupt signal generated by the feeder control unit 103 at the end of the gradual transfer and immediately triggers the longitudinal frame drive system 110 via the longitudinal frame control unit 111 , thus the infrared camera 104 and the channel 105 to measure the temperature image in the measuring position. The infrared camera control device 104-1 transmits the data of the temperature image to the main control device 107 . The main control device 107 then moves the infrared camera 104 and the channel 105 immediately and in the same way into the next measuring position. The infrared camera 104 captures the temperature image information and transmits the data to the main controller 107 through the infrared camera controller 104-1 . In the course of the interruption, during which there is no delivery or transfer of substrates, the aforementioned operation becomes P times, with the components waiting for the one-step transfer of the substrates 101 ; P is the number of measuring positions in which the camera and the channel have to be moved in the direction perpendicular to the substrate feed direction (cf. FIGS. 19 and 20). The control unit 103 of the feeder system then controls the feeder system 102 . The substrate 101 is moved further and temporarily stopped over a distance. Then the main controller 103 of the supply system applies an interrupt signal to the main controller 107 . The main control device 107 then moves the infrared camera and the channel with the aid of the longitudinal frame drive system 110 in the same way for the P-time measurement of the temperature image.

The above procedure is repeated Q times to measure the temperature distribution in the desired measuring range, Q being the number of measurements in the feed direction of the substrate (see FIGS. 19 and 20). Here, the main control device 107 properly assembles the transmitted temperature image information, as shown in FIG. 20. The main control device 107 in fact rearranges the two-dimensional temperature information d (y, x) obtained from a single measurement of a position of the data grouping (y, x) in the main control device 107 in such a way that a single temperature image is produced. The measuring range is given by the expression Q (distance from) × (distance bc). When the measurement in the intended range is finished, the main controller 107 disables the interrupt command from the controller 103 of the feeder system and stores the composite data in the external memory 107-2 . Then the device is put on hold for the next substrate.

The temperature image measurement in the constant transfer mode will now be described with reference to FIG . The camera 104 remains in a stationary position, while the single substrate 101 is fed at the speed v in the direction indicated by the arrow in FIG. 18.

When the position detector 108 detects the measurement position, the time required for the delivery of the substrate over the distance w between the points a and b in the field of view of the measurement is calculated in accordance with the distance w and the delivery speed v of the substrate 101 , and a timer interrupt signal of t Seconds set. The infrared camera 104 then immediately measures the first temperature image and transmits its data. The main controller 107 rearranges the temperature image data inside. The timer interrupt is then triggered every t-seconds. Each time the imaging field of view abcd is measured and the data is transmitted. The main control device 107 composes the temperature image. It disables the timer interrupt after the Q data (see FIG. 13) has been recorded in the intended measuring range. The composite image representation and the image data are stored in the external memory 107-2 . The device then waits for the next measurement of the substrate. This is because the two-dimensional temperature image data d (y, 1) obtained by a single measurement are rearranged at the location of the image grouping (y, 1) in the main control unit 107 , as a result of which a single composite temperature image is obtained.

The measuring range is given by the expression Q (distance a-b) × (distance b-c) given, where Q is the number of measurements in the feed direction of the Substrate.

The temperature measurement method performed with the infrared temperature image measuring apparatus shown in Fig. 18 will now be described.

The present invention also allows various temperature measurement methods that have the following steps: division of the temperature measuring range into one Variety of segments; Measuring the temperature image of each segment; to save the corresponding temperature images; Assemble these images into one Temperature picture after completion of the overall measurement; and playback of the composite image.

For example, the methods include: a method of sampling the measuring substrate in the X-Y direction parallel to the substrate, based on the fixed infrared camera; a method for scanning the stationary substrate by moving the infrared camera in the X-Y direction; a method of scanning the infrared camera in the direction perpendicular to the feed direction of the substrate and parallel to the substrate while the substrate is in a certain direction is moved; and a method for reflecting and collecting scattered rays through lenses, mirrors and the like. in the optical infrared path using a optical system for entering the image into the infrared camera; and fairs of the divided temperature image in the temperature measuring range by moving the optical system as a whole or only the mirror.

A fifth embodiment of the invention relates to a method in which the 77549 00070 552 001000280000000200012000285917743800040 0002004039007 00004 77430 feeder system is independent of the main control device 107 and the substrate 101 is gradually transferred to measure the temperature. In this case, while the substrate 101 is at a standstill, it is necessary to complete the full temperature measurement in the direction perpendicular to the feed direction of the substrate. It is also possible to measure the width ab in the feed direction by a measurement which corresponds to the width of a transfer step. The main controller 107 is programmed so that the measurement takes place in the order shown in the flow chart of FIG. 19. The substrate 101 consists of a flat metal base that is 12,000 mm wide and 900 mm long. The emissivity of the substrate is 0.3, for example. The area measured with a single measurement of the temperature measuring means 104 and 105 is dimensioned such that the lengths ab and bc have the value 68 mm and the widths bc and ad the value 560 mm. The substrate 101 is conveyed and heated step by step under the control of the control device 103 of the feeder system. A feeder period is therefore a sequence of 68 mm through a step and stop of 12 seconds. Accordingly, if the measurement is carried out twice in the width direction (feed direction) and 13 times in the longitudinal direction, practically the entire temperature distribution of the substrate 101 can be measured.

This is shown in FIG. 20 for P = 2 and Q = 13. When the position detector 108 detects the mark 109 by the sensor 108-1 , the interruption takes place in the main control unit 107 and this switches over to the measuring routine. The measurement time is chosen so that the measurement and data transfer take a second or less, while the movement of the infrared camera 104 and the channel in the width direction of the substrate takes about 3 seconds and the composition and display of the image takes about 4 seconds. Two points are measured while stopping the gradual transfer.

The composition of the temperature image is carried out by properly assembling the 26 measurement data from d (1,1) to d (13,2), as shown in FIG. 20. The composite image is displayed on the monitor 107-1 for visual confirmation of the temperature distribution. After completion of the measurement of a substrate corresponding to a single image corresponding temporarily stored in the main control unit 107 temperature image data in the external memory 107 are stored. The main control device 107 is then ready for the measurement of a new substrate and for the detection of the mark 109 of the substrate, which is transferred in a step-wise transfer.

The result of the measurement of the temperature distribution of the substrate 101 is illustrated in FIG. 24. The monitor 107-2 has the function of color reproduction, while Fig. 24 illustrates only the isothermal diagram.

From this one can see that the temperature is around on both sides of the substrate 20 to 45 ° C is larger than in the central section.

The sixth embodiment of the invention relates to a method in which the feeder mechanism is controlled by the main control device 107 and the substrate 101 is transferred step by step for temperature measurement. The main control device 107 issues a command to the control device 103 of the feeder system for the step-by-step transfer of the substrate 101 after the measurement of the temperature distribution of an individual segment of the temperature measurement range has ended. When the substrate 101 is moved one step further, the main controller starts measuring the temperature distribution of the next segment adjacent to the measured segment. This operation is repeated to measure the entire temperature measurement range. In this method, the feeder speed depends on the time taken for the measurement by the main control device 107 . For this reason, the substrate cannot be delivered in a time shorter than the time required for the measurement. It is necessary that the width ab in the feed direction is made equal to the width of the single guide step by individually measuring.

A seventh embodiment of the invention relates to a method in which the feeder mechanism is independent of the main control device 107 and the substrate is transferred at a constant speed to measure the temperature. The main controller 107 is programmed to perform the measurement in the flow chart order shown in FIG . In this case, the main controller must control the measurement interval in accordance with the feeding speed of the substrate 101 .

In particular, it is necessary to carry out the individual measurement of the temperature over the distance during the feeding of the substrate 101 . Furthermore, the measurement in the direction perpendicular to the feed direction of the substrate is limited to a single measurement. This is because it is impossible to obtain a perfectly composed temperature image because the substrate 1 is fed even during the movement of the infrared camera 104 and the channel 105 in the direction perpendicular to the feed direction. The measurement is limited by the time t required for the measurement, the measuring width ab in the feed direction, and by the delivery speed v. The relationship tw / v has to be fulfilled.

The substrate 101 consists of a flat metal base that is, for example, 600 mm wide and 900 mm long. The emissivity of the substrate is 0.3. The range which can be measured by the temperature measuring means 104 and 105 in a single step is chosen such that, for example, the lengths ab and dc have the size of 68 mm and the widths bc and ad have the size of 560 mm. The construction of the temperature measuring device is the same as that of the fourth embodiment of the invention shown in FIG. 18. The substrate 101 is controlled by the control unit 103 of the feed system and heated at a constant speed during the movement. The feeder speed is 18 cm / min.

Thus, if the measurement is made once in the width direction and 13 times in the longitudinal direction (feed direction) for a period of 22.67 seconds, essentially the entire temperature distribution of the substrate 101 can be measured. According to FIG. 21, this follows from the values: Q = 13, w = 68, v = 18 and t = 22.67. When the position detector 108 detects the mark 109 of the substrate 101 by the sensor 108-1 , the main control device 107 triggers the interruption and switches over to the measurement routine. During the measurement period, the measurement and data transfer are divided into one second or less, while the reproduction of the composite image is approximately 4 seconds. The relationship tw / v applies to the cyclical period of 22.67 seconds.

The temperature images are properly assembled from the measurement data d (1, 1) to d (13, 1) as shown in Fig. 20, and the composite image is displayed on the monitor 107-1 for visual confirmation of the temperature distribution . At the end of the measurement of a sub-rate, which is carried out in the same way as in the fourth, fifth and sixth embodiment of the invention, the temperature data corresponding to an image are stored in the external memory 107-2 . The device is then ready to measure a new substrate and to record the newly delivered substrate.

The result of such a measurement of the temperature of the substrate 101 essentially corresponds to the result shown in FIG. 24. The temperature on both sides of the substrate 101 is 15 to 25 ° C. lower than in the central section.

The present invention provides a heater in which the substrate temperature is measured by the temperature meter shown in Fig. 18, while the heater is controlled based on this measurement result to achieve uniform heating.

If a substrate with a large area to be heated is heated, arises the problem of temperature distribution in the heated substrate.

Therefore, according to the invention, a variety of heating devices arranged independently of each other along the direction in which the Temperature gradient is generated, the heat output of the heating devices is controlled independently to make the substrate uniform heat.

Figs. 22A, 22B and 23 show a heater according to the eighth embodiment of the invention. FIG. 22A and 22B is a partially broken front view and a partially open side view of the apparatus represents.

In its heating chamber 112, the heating device has a heating device 113 and feeder systems 102 for supplying the substrates 101 to be heated. The heating device has on the outside a control device 103 of the feeder system and heating control devices 114 for individual control of the heating devices 113 . For example, the heating chamber 112 has a size sufficient to enclose a single substrate 101 consisting of a metal base 720 mm wide, 600 mm long and 5 mm thick. A channel 105 of the infrared temperature meter shown in FIG. 18 is fixed on a side surface of the heating chamber 112 . Each heating device 113 located in the heating chamber 112 has a heat lamp heater, for example a heater, which has five heating wires on one side, each of which outputs a power of 2 kW (10 heating wires in total).

Fig. 23, the overall control system illustrated for controlling the heating devices 113 in the heater based on the temperature measurement. The plurality of heating devices 113 in the heating chamber 112 can be controlled individually by the heating control devices 114 .

The heat output of the respective heaters 113 is calculated in response to a difference between the temperature distribution of the substrate detected by the main controller 107 and the heating temperatures previously set to predetermined values, thereby generating control data that is supplied to a D / A converter 115 .

The D / A converter 115 generates analog signals to the heating control devices 114 from the control data. The heating control devices 114 drive the heating devices 113 in accordance with heat emissions in relation to the analog signals in order to heat the substrates 101 . The then heated substrate is heated by the heat given off by the respective heating devices, which are compensated in such a way that they reduce the temperature gradient.

The substrate 101 is fed through the upper and the lower feeder system 102 and is heated from both sides in the heating chamber 102 . The infrared camera 104 and the channel 105 are arranged on one side close to the outlet of the heating chamber 112 , while the temperature distribution of the heated substrate is measured by the temperature measuring device shown in FIG. 18. The measuring range is such that the infrared camera and the channel no longer have to be moved in the direction perpendicular to the feed direction for the measurement. Rather, the infrared camera 104 and the channel 105 are fixed relative to the heating chamber 112 . The channel 105 has a slot-shaped longitudinal opening in the direction perpendicular to the feed direction of the substrate 101 ; and this opening is used to measure the temperature image of each segment image of the substrate divided by each slot width, to finally obtain a composite temperature distribution image corresponding to the entire substrate. The area that can be detected by a single measurement of the temperature image is 62 mm × 640 mm.

The direction in which the temperature gradient is generated in the substrate is very probably in the direction perpendicular to the feed direction, as can also be seen from FIG. 24. In this case, the temperature distribution at both ends is lower than in the central section. For this reason, five heaters 113 are arranged in the direction perpendicular to the feed direction of the substrate. The arrangement of the heaters 113 is as follows: a heater is arranged in the central portion relative to the width of the substrate measured from the upper to the lower edge; a further heater is arranged at a distance of 160 mm from the center on the upper and on the lower side; and a further heater is arranged at a distance of 320 mm from the center on each upper and lower side relative to the upper and lower width of 720 mm of the substrate. A total of five heaters are attached to one side of the substrate and the same number of heaters is also present on the opposite side of the substrate.

The substrate 101 was heated under the following conditions to improve the temperature distribution that was measured. The emissivity of the substrate was 0.3; the feed rate of the substrate was kept constant at 18 cm / min; and the heating control means 114 was operated to heat the heaters under heater current control so that the set current values for the above heaters No. 1 to No. 5 in the heating chamber 112 were as follows, namely No. 1: 4.2 A, No. 2: 3.5 A, No. 3: 3.5 A, No. 4: 3.8 A and No. 5: 4.6 A. The same current values were set for both surfaces of the substrate. The temperature distribution of the heated substrate 101 was measured with the aid of the infrared camera 104 through the channel 105 . The measuring method was the same as that in the seventh embodiment of the invention. Fig. 25 shows the results. As is apparent from Fig. 24, it was found that the temperature distribution of the substrate was obviously improved in comparison with the example in which the temperature distribution was measured by the temperature measuring device in accordance with the fourth embodiment of the invention without considering the generation of the temperature distribution.

A ninth embodiment of the temperature distribution detection method and the heating control method in the main controller 107 will now be described with reference to FIGS. 26A and 26B. The main control device 107 is programmed with regard to both methods. The corresponding steps are described below.

FIG. 26A shows the temperature distribution of the substrate heated without using the heat release control of the heating devices 113 through isothermal curves. The two-dimensional image data are stored in a data field of the main control device 107 , a temperature distribution along a curve α-α ′ behind the substrate (downstream of the feed direction) being obtained from the data field ( FIG. 26B). The average temperature within a section corresponding to a position in which the heater 113 is mounted is calculated. In the present embodiment, as shown in FIG. 26B, the sections ab, bc, cd, de, and ef corresponding to the five positions of the heaters are determined and identified by A, B, C, D, and E. The average temperatures of the sections A to E are determined and then compared with a set temperature of 200 ° C., whereby corresponding difference values are obtained. In response to the difference values, the main control unit 107 calculates the output values corresponding to the respective heating control units 114 and supplies data to the D / A converter 115 .

Through this process, heat output values of the heaters can be obtained, which are modified or adapted to achieve an even temperature distribution. The reason why the temperature distribution along the curve α-α 'is obtained in the method for determining the temperature distribution is that a temperature distribution in the same direction as the setting direction of the heater 113 must be achieved, which can be controlled individually. Furthermore, the reason why the temperature distribution at the rear portion of the substrate in the feed direction is obtained is that if the substrates are continuously brought up to the heating device, the next new substrate is already heated when the measurement of the first substrate has been carried out. Accordingly, when the main controller 107 finishes measuring the temperature distribution and resets the output values to the heaters 113 , the temperature distribution on the back of the substrate is only improved. For this reason, the temperature distribution at the rear portion of the substrate is detected.

With such a control system, it is possible to improve the temperature distribution substantially as effectively as in the case of Fig. 25. Fig. 24 shows an example in which the temperature distribution of the substrate is measured under the condition by the temperature measuring device shown in Fig. 18 that the substrate is heated by the heater regardless of the temperature distribution. From FIGS. 24 and 25 show that the main control unit operates to the effect that the temperature gradient of the substrate is automatically reduced or improved.

On the other hand, it is necessary to prevent overheating due to a failure of the main control unit 107 . According to the present embodiment, an upper limit of the heating current is set in the circuits for the heating control devices 114 , or a lower limit for the control current or a control current range is defined in the program of the main control device 107 in order to prevent overheating.

The following is the tenth embodiment of a vacuum evaporation device in which the infrared temperature measuring device, the associated measuring method, the heating device and the associated heating temperature control method to be discribed.

A variety of methods for applying a thin film become practical applied under vacuum. In any case, the substrate temperature is at Applying the film is an important parameter. Especially in the event that a The film should be of uniform thickness on a large surface Temperature distribution of the substrate on which the film must be produced serious problem.

According to the aforementioned Japanese Unexamined Patent Publication No. 63-2 17 238 are heaters, substrates and an infrared measuring section in a common chamber for simultaneous heating and measurement. Would use this structure connected to the film evaporation device, so would be those emitted by the heaters Infrared rays directly or after multiple reflections in the infrared detection system arrive, so that it would be impossible to have an exact temperature distribution of the Winning substrates.  

On the other hand, according to the tenth embodiment of the invention Heating temperature control method according to the previous embodiment on a device for applying a thin film in a vacuum using of a film deposition process by sputtering.

The sputtering device according to this embodiment relates to a sputtering apparatus for a magnetic disk produced by sputtering, as shown in Figs. 27A and 27B, each showing a sectional view from above and a sectional view from the side of said device.

The device generally consists of a loading chamber 219 , a heating chamber 220 (heating chamber 112 ), a sputtering chamber 221 and an unloading chamber 222 . These chambers are connected in series with one another via slide valves 223 . Each chamber is provided with a gas outlet system 224 so that it can be kept at a vacuum level independently of the other chambers.

Referring to FIGS. 27A and 27B, heater 113, and an infrared camera 212 are mounted according to the invention. There is a temperature measuring section 232-2 down the measuring section 232-1 relative to the feeder or transfer direction of the pallet 218 , while a separating plate 233 with a slot for the passage of the pallet 218 between the heating section 232-1 and the temperature measuring section 232-2 is arranged.

A preheater 219 'is arranged in the loading chamber 219 and can accommodate a plurality of pallets 218 , as will be described later.

The heating chamber 220 has a structure corresponding to that of the previous exemplary embodiments of the invention, the temperature measuring means being provided as parts of the walls of the heating chamber 112 .

In this example, the sputtering chamber 221 is divided into three chambers 221-1 to 221-3 for carrying out three different types of sputtering. Target objects 225-1 to 225-3 are arranged in the respective chambers.

The unloading chamber 222 successively receives the pallets 218 that have undergone the sputtering processes in the sputtering chamber 221 . A feeder system 102 for sequential feeding of the pallets 218 is arranged in four chambers, ie in the loading chamber 219 , the heating chamber 220 (heating chamber 112 ), the sputtering chamber 221 and the unloading chamber 222 .

In the present apparatus, a flat substrate holder that can carry nine 5.25 inch diameter magnetic disk substrates open on each side (the plates are hereinafter simply referred to as disks) and the holder is referred to as pallet 218 is the process treatment subjected. A plurality of pallets 218 with substrates 217 attached to them are simultaneously inserted into the vacuum chambers. Pallet 218 is 720 mm wide (or high) and 600 mm long in the feed direction.

As described above, the vacuum chamber consists of four continuous chambers, ie the loading chamber 219 , the heating chamber 220 , the sputtering chamber 221 and the unloading chamber 222 , which are separated from one another by slide valves 223 , in such a way that a high vacuum outlet can take place through independent vacuum systems 224 . The three different target objects are arranged at intervals in the sputtering chamber 221 to form a multilayer and to coat both surfaces of each substrate at the same time. The pallets 218 are successively delivered through the feeder system 102 from the loading chamber 219 and provided with successive films through the heating chamber 220 and the sputtering chamber 221 and then placed in the unloading chamber 212 . With this device, it is possible to continuously replace the substrates 217 without releasing the vacuum of the sputtering chamber 221 . The device is a so-called in-line sputtering device. Another type, namely the inline sputtering device with pallet loading, is also used in practice. The present invention can of course also be used in the latter device. In the device with pallet loading, the sputtering chamber 221 cannot be vented to the atmosphere. Pallets 218 are sequentially conveyed into the vacuum chamber so that vacuum discharge, heating, film application, atmospheric release, and similar treatments are performed while a film is being fed.

The heat chamber 220 has the same function and structure as that of the previous embodiment of the invention. The five heaters 113 are arranged in the direction perpendicular to the feed direction of the pallet 218 on both sides of the pallet. The heating chamber 112 is under high vacuum. A vacuum channel 214 with a slit-shaped opening section is installed perpendicular to the feed direction in the vacuum chamber. The inner wall of the vacuum chamber of the temperature measuring section was completely subjected to a surface blackening treatment by an anodic oxidation process.

Furthermore, the outer wall of the vacuum chamber and the vacuum channel 214 of the temperature measuring section 232-2 is cooled by water, in order thereby to suppress as far as possible the infrared radiation emanating from the walls of the vacuum chamber.

In this film evaporation device, the atmosphere in which the substrates are located differs from the atmosphere in which the measuring means for temperature measurement are located. In other words, the pallets 218 and the substrates 217, which are the objects to be measured in temperature, are in the vacuum chamber, while the infrared chamber 210 is mounted in the atmosphere. For this reason, it is necessary to provide an infrared window 215 through which the infrared rays enter the vacuum chamber 214 . In the present embodiment, silicon which has been subjected to an anti-reflection treatment is used as a window material with a high infrared transmittance. The material is selected from the compounds Al₂O₃, CaF₂, LiF and the like, which are generally used for infrared light parts.

The reason for using the vacuum channel 214 is explained below.

If used as a vacuum channel, the infrared window 215 can be made compact. If the window is made large, the cost of the material increases and the mechanical strength also decreases.

Furthermore, the presence of the vacuum channel prevents the infrared rays emitted from substrates other than the substrates from entering the infrared camera 210 , so that the infrared interference light is reduced.

The vacuum channel runs right up to the lens of the infrared camera, which means it is possible to interfere with the infrared absorption through the atmosphere and the flickering of the image due to atmospheric confection avoid.

On the other hand, it turns out in the event that the channel is not kept under vacuum can be, as effective, the air in the duct through a gas, such as dry nitrogen, which does not absorb infrared radiation. Is too it when attaching the infrared camera in the atmosphere of dry nitrogen possible to absorb infrared radiation through steam to stabilize the To avoid measurement.

The vacuum channel 214 has a long, slit-shaped opening perpendicular to the feed direction. Accordingly, the image area that can be captured at once corresponds to the area (area abcd of FIG. 34A) with which the opening portion of the vacuum channel opposes the substrates.

The field of view that can be measured all at once through the vacuum channel measures 55 mm on the short side and 650 mm on the long side of the pallet 218 . The control means such as the infrared control device 104-1 , the main control device 107 , the position detector 108-1 , the heating control device 114 have practically the same function and structure as that of the fourth embodiment of the invention.

The feeder system 102 is independent of the main control device 107 and is used for the delivery or transfer of the pallets 218 at a constant speed, for heating and film coating.

A practical film deposition using the Sputtering device described.

First, a plurality of 5.25 inch thick wafer substrates 217 were loaded on a pallet 218 . The plurality of pallets were placed in the loading chamber 219 . After the vacuum was discharged, all slide valves 223 were opened and electrical energy was supplied to the heaters in the heating chamber 220 and the targets in the pollination chamber 221 . The feeder system 102 for successively feeding the pallets 218 was then put into operation. The feed system 102 was operated at a constant speed of 18 cm / min. After the pallet 218 transferred to the heating chamber 220 at a constant speed was heated, the temperature distribution of the substrates and the pallets 218 were measured. The wafer substrates were then subjected to a multiple film coating and placed in the unloading chamber 222 . Furthermore, the heating temperature of the substrates was set to 200 ° C.

The method for measuring the temperature distribution of the substrates 217 and the pallet 218 and the control signal output method for the heater were the same as the measurement method and the heater control method of the fifth embodiment of the invention; however, some changes have been made to the main controller 107 because of the application related to the sputtering device.

First, a function is added to the main controller so that it can determine which of the continuously fed pallets 218 to measure. The position detector 108-1 (see Fig. 18) mounted on the lower portion of the vacuum channel 214 was an infrared- transmissive detector, so the measurement was started when the pallet 218 passed through the sensor light. A slot corresponding to the mark 109 (see FIG. 18) was made in the pallet 218 . It was thus possible to count the number of pallets 218 passing through the sensor light and to measure the designated pallet 218 .

The program was structured in such a way that the emissivities of the large number of objects on the plate 218 with the different emissivities were brought into the same order and then measured, whereby the corresponding temperature distribution in relation to the measurement objects with different emissivities could be measured. Since the objects to be measured in terms of temperature from the pallets 218 and the substrates 217 consisted of different materials with different surfaces, the emissivities of the two objects were very different from one another.

To give an example: when the emissivities of the substrates 217 and the pallets 218 were measured, the emissivity of the substrates 217 was 0.19 while the emissivity of the pallets 218 was 0.32. Accordingly, there was a problem that if the emissivity was adjusted to the substrate 217 during the measurement, it was impossible to measure the other object such as the pallet 218 . Therefore, after the temperature image was measured by setting the emissivity on that of the substrate 217 , the temperature image was measured by setting the emissivity on that of the pallet 218 . Thereafter, the temperature image alone of the pallet 218 and the temperature image only of the substrate 217 were put together again from the temperature image data of both objects into a single image information item to complete the measurement of the temperature distribution of the entire pallet 218 including the substrate 217 .

In the present embodiment, the emissivity adjustment and the measurement was carried out twice for both measurement objects in the measurement range complete the measurement and assemble the image information. These Procedure can be applied in the same form to the case that two or there are more types of measurement objects. In the event, however, that there are different types of test objects, there is a risk that the Measurement takes a long time and the composition of the image gets complicated.

Accordingly, the substrates 217 were heated during delivery prior to film coating, and the temperature of the substrate and the temperature distribution were measured. The results are shown below.

First, in the event that the heat release control of the heaters was not carried out to improve the temperature distribution in the heater according to the invention connected to the sputtering device, the heating currents supplied to the individual heaters 113 of the heater were kept constant, with the pallets 218 during the Heating were transported on. The heating current was set to 3.5 A for each heater. The temperature distributions of the heated pallets 218 and the substrates 217 were measured.

The result is shown in Fig. 29. The isothermal graph of FIG. 29 relates to a temperature distribution which results from the composition of the temperature distribution of the pallet 218 and the temperature distribution of the substrate. As shown in Fig. 29, the temperature distribution is such that the temperatures were low at the upper and lower portions of the pallets and high in the central portion thereof. Referring to substrates 217 , the middle row thereof was kept at a high temperature and the bottom row at a temperature about 25 ° C lower.

A method according to an eleventh embodiment will now be explained, in which the heat output of each heater 113 is controlled so that the temperature distribution of the pallet 218 and the substrates 217 is kept uniform.

Using the in Figs. 27A and 27B illustrated sputtering apparatus, a film was deposited on the substrate. To control the heat output, the temperature distribution detection method and the control method were used in the same manner as in the embodiment shown in Figs. 26A and 26B. More specifically, the main controller 107 detected the temperature distribution from the results of measuring the infrared temperature image measuring device with respect to the temperature distributions of the heated pallet 218 and the heated substrate 217 . The main control unit 107 coupled the heat output signal back to the individual heating control units 114 (see FIG. 23) on the basis of this detection result and controlled the heat output of the individual heaters 113 during the supply of the pallets 218 , so that the temperature distribution of the pallet 218 and the substrates 217 remained uniform .

The substrate 217 , the temperature distribution of which remained uniform, was fed to the film deposition process. The other conditions such as the set heating temperature and the pallet feeding speed were the same as those of the tenth embodiment of the invention.

Fig. 30 shows the results of the temperature distribution control on the basis of the isothermal curves. In comparison with the result of FIG. 29, in which no temperature distribution control was carried out, the temperature distribution was suppressed within a narrower range, so that the substantially better result was achieved. Both the distribution in the case of the pallet 218 and the distribution in the case of the new substrates 217 were suppressed within a range of ± 5 ° C. Furthermore, the twenty-eight pallets 218 were conveyed continuously and the required films were applied to them. The average temperature of each pallet was measured. Figures 31A and 31B show the result. In the event that no temperature distribution control was carried out ( Fig. 31A), the temperature distribution was widespread and the average temperature gradually increased as the number of pallets increased. In contrast, when the temperature distribution control according to FIG. 31B was carried out, the temperature distribution of the substrates 217 was suppressed in a narrow range, the average temperature of the substrates being controlled in a substantially constant manner, regardless of the number of pallets 218 being transported.

From the above results, it can be seen that the temperature distribution control acts to smooth out within the pallet 280 and reduce the temperature fluctuations between the pallets.

Since there was no data on the temperature distribution for controlling the heat output of the heaters 113 with respect to the first pallet 218 , it was necessary to create specific temperature distribution data. For this purpose, due to the fact that the current values of the corresponding heaters do not particularly change in order to achieve a uniform temperature distribution, the data of the current values for the respective heaters were prepared in advance for a constant temperature; or the measurement data stored in the external memory 107-2 (cf. FIG. 23) were called up again in order to carry out the regulation of the temperature distribution starting from the first pallet 218 .

In cases where the temperature difference between two surfaces of the substrate 217 is problematic, it is possible to measure the temperature distribution on both sides of the substrate 217 by arranging temperature measuring means on both surfaces of the substrate 217 .

In this case, a single main controller 107 controls the two controllers 104-1 to measure the temperature images on both surfaces of the substrate 217 and maintain the temperature distribution, and to control the heaters 113 on both sides of the substrate 217 .

When the pallets 218 are transported through the feeder system 102 , slippage sometimes occurs discontinuously, making it impossible to feed or transfer the pallets 218 at a constant speed. In such a case, the measurement of a temperature image would result in a distortion of the composite image during a constant time interval. It is therefore necessary to provide a device for synchronizing the measuring cycle and the delivery distance of the pallet 218 . This facility is created by adding the function of marking to indicate the time of measurement of the pallet 218 . With the signal generated by this device, the main controller 107 performs an interrupt process to finish measuring the image. Fig. 32 shows the example of the palette to which a function for generating a timing for measuring the temperature image has been assigned. The pallet 218 is provided with detection holes 226 for the synchronization of the timing in addition to the marking 109 . The light emitted by the light-emitting element of the sensor 227 falls through the holes 226 and is received by the facing light-receiving element of the sensor 228 . The interruption process of the measurement must take place in the main control unit 107 .

A heating control method according to a twelfth embodiment of the invention will now be described, in which the main control device controls the respective heat outputs of the heaters in response to the temperature distribution of the substrates by the composite temperature distribution image so that the temperature distribution in the substrate is kept uniform. Fig. 33 illustrates a block diagram of the control device for the heating and 232-1 of the film deposition apparatus shown for Temperaturmeßstrecke 232-2 in FIGS. 27A and 27B. Further, the circuit diagram of the heater control, and the image composition refers.

Pallet 218 is heated as it is moved through feeder system 102 at a constant speed. The pallet 218 then arrives in front of the temperature measuring section 232-2 , whereupon the pallet 218 is detected by a sensor 108-1 to initiate the measurement. While the temperature measurement range is set in the area of the field of view (area abcd) of the vacuum channel 214 (cf. FIG. 34A), the measurement is carried out cyclically, the measurement time sequence taking place synchronously with the feed speed v of the substrate. The time interval is given by the distance (ab) / v, since it is the time period for the delivery of the substrate over the distance.

The infrared image determined by a single measurement is converted by the control unit 104-1 of the infrared camera according to its brightness into a temperature image and transmitted to the main control unit 107 . The main controller 107 stores the signal. The temperature image data obtained in accordance with the subsequent measurement interval are supplied to the main control unit 102 , where the two temperature image data sets are combined to form a single image information item.

Furthermore, the measured according to the measurement timing described below Temperature picture of the pallet based on the data of the previously measured temperature picture composed.

The main control device 107 calculates the temperatures of a plurality of previously designated specific positions from the temperature image. The information means for designating the measuring points are 18 points AR according to FIG. 34A. They are chosen as the positions that best match the heater positions. The temperature distribution in the longitudinal direction of the pallet is thus obtained from the temperature measurement values obtained by a single image recording (for example the temperature distribution at points A, D, G, J, M and P).

In the main controller 107 , an approximate equation is programmed about the relationship between the heat generation temperature (ie, the temperature indicated by a thermocouple 319 provided in each heater for the feedback temperature of each heater according to a prescribed target substrate temperature) and the pallet feed speed Relationship between the subatrate temperature and the heating generation temperature programmed for the specific feed rates When the target substrate temperature is added to this information, the program is set so that the heating temperature is determined by a 1: 1 relationship.

In the event that the pallet through the evaporation device on the constant time heating line is stopped to heat the substrate, it is necessary to  Approximation equation of holding period, or the relationship table, instead of To program pallet feed speed.

Fig. 35 shows the sequence of the heating control, the operation of which is described below.

• (1) A target substrate temperature is set in the main controller 107 .
• (2) In the main controller 107 , a heat generation temperature of the heaters is calculated based on the target substrate temperature. The data is supplied to the D / A converter 115 , which outputs analog values based on the data supplied to the corresponding heating control devices 114 .
• (3) The main controller 107 turns on the heater supply sources of the respective heaters.
• (4) The heating control devices 114 drive the heaters connected to them and perform the feedback control based on the output signals of the thermocouples 319 so that they correspond to the analog values output from the D / A converter 115 . The feedback control of the heating controllers 114 can be in various ways, such as by an ON / OFF controller, a proportional controller (B), a proportional integral controller (BI), a proportional differential controller (PD), a proportional integral differential controller (PID), or the like that are commonly used.
• (5) When the heater temperature reaches the target value and is stabilized, the pallet 218 is delivered and heated. When the supplied pallet has been detected by the position sensor 108-1 , the infrared image is taken and the temperature images are assembled.
  When the temperature image has been measured on a single palette, the temperature distribution is obtained and the difference between the measured temperature distribution and the target substrate temperature is calculated to determine the new heat generation temperature of the heaters. The above-mentioned P, PI, PD and PID control methods can be used in the calculation of the heat generation temperature.
• (6) The resulting data is supplied to the D / A converter 115 , which outputs new analog values. The heating control devices 114 carry out the feedback control so that the temperature corresponds to the analog values.

In the invention, namely, the setting values of the heat generation temperature the heater fed back so that the temperature of the substrates constant during the feedback control of the generation temperature of the heaters is held. In this way, a double feedback control takes place.

There is still another method for carrying out the feedback control of the set values of the heater generation temperature before the temperature image and the composition of the individual pallets are measured. In other words, the main controller 107 calculates the temperature and the distribution of the substrate after measuring the local temperature image (for example, after measuring at the measuring points B, E, H, K, N and Q of Fig. 34A), and transfers the data to the D / A converter 115 . This method improves the temperature distribution from the middle of the heating period of the individual pallets.

Instead of the D / A converter 115 according to the block diagram of FIG. 33, it is possible to use a decoder which only has a decoding function; using a heater that contains the D / A converter.

It is also possible to determine the substrate temperature from the passage of time after Derive measurement of the substrate if the radiance of the substrate is given under vacuum. So that the temperature of the substrate during film formation by programming the radiance in the main control unit to be specified in advance. Conversely, it is possible to Calculate the heating temperature of the substrate and the substrate with this Temperature by adjusting the substrate temperature at the start of film application to warm up.

Even if this type of heating method is used, it is possible create a desired temperature distribution in the pallet.

This can be done by programming the temperature distribution settings can be easily reached in advance in the main control unit.  

A thirteenth embodiment of the invention in which the infrared temperature measuring device, the temperature measuring method and the heating control method according to the eleventh and twelfth embodiments are applied to a magnetic disk sputtering device is illustrated in FIGS . 27A and 27B.

In general, the layering structure of the magnetic treated by sputtering exists Intermediate film made of Cr or a Cr alloy on the substrate, and with a magnetic film and a Co alloy a protective film on top of it. There is also a magnetic footage, at which no intermediate film is formed.

In the present embodiment, a patterned substrate with fine grooves is used on the peripheral portion of the NiB-plated surface of the substrate. Furthermore, the structure of the magnetic disk consists of three layers, namely a Cr intermediate film, a magnetic film made of a Co-Cr-Ta alloy as a magnetic carrier, and a C layer as a protective layer on the NiB-plated substrate. Accordingly, the target materials corresponding to the above three materials were placed in the sputtering chamber 221 .

The plate 218 , on which nine substrates 217 are mounted, was introduced into the loading chamber 219 , in which preheating for degassing the substrate and the pallet is carried out during the production of the high vacuum. During the sputtering process, after Ar gas was introduced into the sputtering chamber 221, the electrical supply was applied to each Cr, Co-Cr-Ta and C cathode, and the cathodes were discharged. During this process, the temperature of the heating section was run according to the method shown in the twelfth embodiment.

The slide valves 223 of each chamber were then opened and the pallets 218 were successively delivered from the loading chamber 219 . Pallets 218 were fed at a constant rate of 20 cm / min.

After the pallets 218 had been heated in the heating section 223-1 , the partial image was measured by the temperature measuring section 223-2 in synchronism with the feed rate. The images were then assembled and the overall temperature distribution of the pallet as a whole was indicated by a color image as shown in Fig. 34B. The temperature difference between the pallets according to FIG. 34C could be displayed by switching the image reproductions.

The main control device 107 calculated the temperature distribution from the measured temperature image and regulated the heating in such a way that the temperature distribution of the substrate became low. The heating control method and the temperature measuring methods were the same as those in the eleventh and twelfth embodiments of the invention.

The intermediate Cr film, the magnetic Co-Cr-Da film and the protective film C were continuously applied to the substrate until the predetermined thickness was reached applied, which was heated to a predetermined temperature. The until Pallets that have been in full use have been Unloading chamber turned off. After coating all the pallets, only the Unloading chamber opened, and then the magnetic disks were made.

In cases where there was no heating control because the substrate temperature of the top row and the bottom row in the pallet was 10 to 30 ° lower than that of the middle row in FIG. 40A, there was no unevenness in the coercive force among the nine magnetic disks on the Pallet on.

In particular, in the case of a large-area disk substrate with a diameter of 8 inches or more according to FIG. 40B, a temperature distribution of approximately 20 ° C. occurred in the substrate; and although the film thickness of the Co-Cr-Ta magnet carrier was uniform (see Fig. 40B), the circumferential coercive force distribution was obtained ( Fig. 40D). As a result, a fluctuation occurred in the head reproduction output signal (envelope signal) per revolution of the disk ( Fig. 40E).

Also existed because of the variety of pallets that had been plating for a long time were worried that the temperature of the heater would change would and a change in the magnetic properties of the pallets among themselves.  

However, in the heating method according to the present embodiment the nine magnetic disks with film on the pallet essentially the same magnetic properties because of the substrate temperature distribution was suppressed within the pallet by ± 4 ° C. Even with large areas There was no distribution of the magnetic properties of the disc substrate inside the substrate.

There was also no change in the magical properties of the pallets on, since the substrate temperature is also regulated during long-term coating has been. Next came one of the nine magnetic pick-up disks on the pallet strong magnetic anisotropy in the circumferential direction due to the structuring the NiB substrate surface; and it was possible that in the head reproduction signal Fluctuation in electromagnetic conversion per revolution of the plate to reduce.

The embodiment of the invention discussed above relates to Process in which sputtering is used for thin film coating. It is clear that the present invention also applies to coating by a CVD method is applicable.

Recently, it has become possible to use the CVD method to make different types of films to manufacture. For example, materials such as Si, SiO; SiN, C as well metallic material can be processed. In any case affects the temperature of the substrate very film properties. In particular, the plasma CVD method to apply the film by using RF sources reduced pressure for coating substrates of large surface, such as such as a solar battery. Accordingly, the Temperature of the large-area substrate measured and a uniform Heat control performed to achieve uniform photoelectric conversion properties to achieve.

Fig. 36 shows a fourth embodiment of a sputter deposition device with recirculation recirculation of the pallets, which is used both in connection with the infrared temperature measuring device, the temperature measuring method and the heating control method according to the eleventh and twelfth embodiment of the invention, as well as with the coating device shown in Figs. 27A and 27B the magnetic recording disc worked by sputtering works.

The device is characterized in that a function for removing the filmed pallets 218 from the unloading chamber 222 and for supplying the pallets 218 to the substrate mounting / removal section 325 upstream of the loading chamber 219 is assigned to the device by a lifter, and additionally Feeder system for the reverse direction.

In the substrate mounting / removal section 325 , the substrates that have been coated on the pallet 218 are replaced by an automatic device for substrates that have not yet been coated. These substrates are now fed into the loading chamber. Accordingly, the device is suitable for a mass production system, since the large number of pallets in the device is put into circulation again and the substrates are automatically replaced. The feeding method is designed in such a way that the feeder systems for the respective chambers work independently of one another and are controlled in cooperation with the feeder systems arranged immediately upstream and downstream.

The mode of operation will be described below.

• (1) After the pallets 218 are loaded into the loading chamber 219 , the feeder system 102 of the loading chamber 219 is stopped and the chamber is brought to a high vacuum.
• (2) After the gas has been discharged, the slide valve 223 on the heating chamber side is opened and the pallet 218 is transferred to the heating chamber 232 .
• (3) After delivery, the feed system 102 of the heating chamber 232 is turned off and the slide valve 223 is closed. The pallet and the substrates are heated under vacuum. The pallet 218 faces the heater 113 during heating. The heaters 113 are arranged in the direction perpendicular to the feed direction.
• (4) The temperature measurement takes place when the pallet goes to the sputter chamber has been transferred after heating has ended. The heating control method and the temperature measurement method are the same as in the case of the eleventh and twelfth embodiments of the invention carried out.
• (5) After measuring the substrate temperature, the pallet 218 is transferred to the sputtering chamber 221 . An intermediate Cr film, a magnetic film Co-Cr-Ta, and a protective film made of C are applied to the desired thickness in the sputtering chamber, while the pallet is moved at a constant speed by the electrical invitation.
• (6) The film provided with a pallet 218 is transferred into the unload chamber 222 and discharged by connecting the discharge chamber 222 with the atmosphere.
  The pallet 218 is thus transferred into the substrate mounting / removal section 325 by the ascending lifters 322-1 , the feeder system 324 for the reverse direction and the descending lifters 323-2 .
• (7) In this section, the film-coated substrates are replaced by the Machines are taken over and new substrates are added to the pallet loaded and transferred to the loading chamber.

The operation described is circulated when the device is new set pallet for generating magnetic layers repeated.

The discs produced in this way have a uniform surface magnetic properties in the circumferential direction, as is the case with the thirteenth embodiment of the invention is the case.

Figs. 37A, 37B, 38A and 38B show a fifteenth embodiment of the sputtering apparatus from the disc loading type to which the Infrarottemperaturmeßverfahren that Temperaturmeßmethode and the heating control method of the present invention is applied according to the eleventh and twelfth embodiments. A feature of this device is that the substrates are fed one after the other.

The device consists of an L / UL vacuum chamber (loading / unloading chamber) 426 , which works both as a substrate loading chamber and as a substrate unloading chamber; a feed chamber 427 with a feeder system 102 a; a heating chamber 223 a; and a plurality of sputtering chambers 221 a for the continuous coating. Each chamber is equipped with a 224 a vacuum generation system.

The substrate treatment operation is as follows:

• (1) The substrates are successively removed from a cassette which receives those substrates which have not yet passed through the film vaporization. The substrate is loaded onto a carrier 328 for holding the substrate. A lifter 429 is lowered to place the substrate in the L / UL- ( 426 ). Then the gas in the L / UL- ( 426 ) is discharged.
• (2) After unloading the L / UL ( 426 ), the slide valve 232 is opened and the carrier 428 a holding the substrate 218 is transferred into the supply chamber 427 . As soon as the substrate is brought under the heating chamber 232 a, the carrier 428 is pushed upward by the lifting element 429 to the heating chamber 232 a, such that the substrate is finally in the heating chamber 232 a, where it is heated during a constant period of time. As is apparent from FIGS . 38A and 38B, the heating chamber 232 a and the sputtering chamber 221 a are separated from the other vacuum chambers by the upward movement of the carrier 428 and are exposed to a vacuum suction by independent vacuum systems 224 a via a ventilation lock 435 .
• (3) The temperature pattern , ie the temperature of the individual substrate, is measured by recording the temperature measuring section 232-2 a once in the supply chamber 427 between the heating chamber 232 a and the sputtering chamber 221 a. In the event that the substrate has a large extent, partial images are taken several times and combined to obtain the entire temperature image of the substrate. After the measurement, the heating method is the same as that of the twelfth embodiment of the invention.
• (4) When the carrier is transferred to the first sputtering chamber 428, 221 a, the carrier 428 is lifted a for insertion of the substrate in the sputtering chamber 221st The electrical supply is applied to the opposing cathodes 242 a and a coating is applied until the predetermined film thickness is reached, while regulating the electrical power and the coating duration. After the formation of the first layer, the second and subsequent layers for producing a multi-layer are produced in the same way. The cathodes 242 a in the sputtering chamber have circular targets 225 a, the targets facing each other in such a way that films are applied to both sides of the substrates. The substrate 217 is aligned so that the center of the substrate 217 coincides with the center of the target 225 a and the films are generated in a static juxtaposition.
• (5) Upon completion of the sputter coating, the carrier is returned to the L / UL chamber 426 through the backward feed system 424 (on the return side) to the delivery chamber 427 . In the L / UL chamber 426 , the slide valve 223 a is closed after confirmation of the delivery of the substrate that has not yet been fed to the film coating, and the L / UL chamber is brought into contact with the atmosphere. After opening an inlet and outlet door 430 , the carrier 428 is raised and the substrate is brought outside the L / UL chamber. The substrate on which the film has been applied is removed and a new substrate on which no film has been applied is loaded onto the carrier. The steps described above (items (1) to (5)) are then repeated.
  Loading / unloading of the substrates between the substrate cassette 431 and the carrier 428 is carried out by an automatic machine.
  A measuring section 232-2 a is arranged in the feed chamber 427 from the heating chamber 232 a to the sputtering chamber 221 a. There is therefore no risk that the infrared radiation emitted by the heating chamber 232 a will enter the measuring section directly. However, the inner wall of the parts forming the vacuum channel 424 a were subjected to a surface blackening treatment.

In the present sputter vaporization device, the entrainment of contaminant gases be suppressed from the ambient air because the individual Substrate and the carrier during the evaporation in each evaporation chamber be introduced. Furthermore, a concentration of the contaminant gases (for example H₂O, H₂ and CO₂) are reduced in the sputtering atmosphere, because the special vacuum manufacturing system is designed for each sputter chamber.

In addition, the steamer can not only be used as a steamer magnetic discs, but also used for opto-magnetic discs will. Opto-magnetic disks can hold information in through heat record a magnetic field while rotating the information by suitable rotation is reproduced. The typical magnetic material is the material of the Tb-Fe- Co-system or the material of the Nd-Fe-Co system. To stable fine magnetic Generating domains is creating a magnetic, vertical direction Anisotropy in the direction relative to the film surface, as well as a fairly high one Coercive force required. It is possible to have a multilayer on the magnetic optical disc with stable magnetic domains by suppression the concentration of the impurity gases in the sputtering atmosphere and the To generate substrate heating temperature during the vapor deposition process.

In FIGS. 39A and 39B a sixteenth embodiment of the invention is shown, wherein the Infrarottemperaturmeßgerät, the temperature measurement and heating control method according to the eleventh and the twelfth embodiment of the invention applied to a Bedampfungsgerät with rotary drum. In this steaming device, a substrate is mounted on a substrate holder in the form of a rotating drum. The drum is rotated in front of the heaters and electrical discharge targets to heat the substrates to apply the film.

The device has cathodes 242 b with targets 225 b, cover screens 533 , a substrate holder 534 in the form of a drum, a heating part 232-1 b and a temperature measuring part 232-2 b in the vacuum chamber. The device belongs to the batch processing type, in which the vacuum chamber is connected to the atmosphere when the substrates are mounted or removed. In a vapor deposition process using this device, the substrates 217 are attached to a drum-shaped, octagonal, rotatable substrate holder 534 in order to produce the vacuum. After the vacuum is about 10 ^-5 to 10 ^-6 Torr, the heating takes place, with the substrate holder rotating. When the vacuum reaches the target level or less, the evaporation starts. During the vapor deposition, the electrical discharge is carried out on the condition that the screens 533 are closed. The reason is that the oxidation and the contamination of the surfaces of the targets 225 b which occur during the connection of the vacuum chamber to the atmosphere are removed by the sputtering for a constant period of time. The screens 533 are then opened in order to apply the films to the substrates 217 . The films are applied to the desired thickness, while the substrates 534 rotate at a predetermined number of revolutions per minute. It is also possible to produce a multiple coating by arranging a plurality of cathodes 242 b in the vacuum chamber.

The temperature measuring part 232-2 b is installed downstream of the heater 113 b in the rotating direction of the substrate holder 534 b based on the method according to the eleventh embodiment of the invention. Since the substrate holder 534 is in the form of a polygonal drum, the heaters 113b and the vacuum channel 214 are constructed and attached so that the infrared rays emitted by the heaters during the rotation of the drum and the infrared rays emitted by the cathodes during the sputtering are prevented to reflect on the flat surfaces of the holder and to enter the vacuum channel 214 .

When the temperature image is recorded, a measuring interval is monitored by a position sensor on the rotating shaft 108-1 , the individual surface of the octagonal drum being recorded twice. The temperature distribution image corresponding to a single revolution of the drum (eight surfaces) is recorded and combined to obtain the overall temperature distribution image.

A temperature gradient is generated in the axial direction of the drum since the substrate holder 534 rotates. Accordingly, the heater 113 b are divided and arranged in the axial direction of the drum. The average values of the substrate temperatures are caused to correspond to these positions, and these are calculated to perform the heat release control of the heaters 113b . The heating control method is based on the twelfth embodiment of the invention.

The film is made of a material of the Cr-Si alloy system that is resistant to thin films produced. This resistance alloy is called thin film heating resistor, as a heat resistance alloy for printed circuit boards with thin film multiple coating, as a resistance alloy in hybrid IC plates, and the like used more.

Since the resistance (thin film resistance) of a thin resistor film during evaporation is affected by the substrate temperature, it is required the substrate temperature and the distribution aimed at the To regulate uniformity. When using the steamer according to the Resistor film made according to the invention can have the resistance distribution within a narrow range of variation over a large area of the substrate holder Applying the temperature measurement method to the substrates and applying the Heating control method can be suppressed. The throughput of the Vaporiser with batch operation increased.

Through the infrared temperature image measurement method and the associated device of Invention can be the temperature distribution with respect to a substrate that is not yet was measured in a conventional measuring system and that a large one Measuring range, can be easily measured if the distance between the Infrared camera and the measurement object, d. i.e., the substrate is short. Can continue both a large temperature distribution of a moving and too measuring object can be measured synchronously with the movement, as well as a resting measurement object. In particular, the present invention is in view of the non-contact measurement and the large-scale measurement of the temperature distribution very effective if the substrate in the heater is at a high level  Temperature and under vacuum or in a vacuum evaporation device and is moved.

According to the present invention, the means for measuring temperature are of the substrate and the means for heating the substrate at various Place the vacuum chamber arranged, passing through the partition to the vacuum channel. The inner wall of the vacuum chamber, the forms the infrared path is subjected to a surface blackening treatment. It is therefore possible to avoid the risk of being caused by the heaters emitted infrared rays directly or by reflection in the infrared camera reach. Thus, there are no disturbance components caused by the heaters in the temperature distribution pattern, which makes a good temperature distribution pattern preserved and temperature measurement errors can be avoided. By connecting the Infrared temperature measuring device with the system becomes a vacuum evaporation device created that can precisely measure the substrate temperature before vapor deposition. When measuring the temperature of the evaporator through the vacuum chamber moving substrates become those emitted by the substrate Infrared rays measured outside the vacuum chamber. Hence the measurement not affected by the fact that the vacuum channel just before the Optics of the infrared camera is arranged. Thus, a good temperature distribution picture be preserved.

The main control device for the composition of the temperature distribution image and for temperature control uses the difference between the temperature distribution information of the substrate and the prescribed temperature distribution to control the heater for the purpose of obtaining a target temperature distribution. This heating control system is connected to the vacuum steam generator with the Purpose applied to create a vacuum evaporation device that the coating can perform according to the target temperature distribution.

The Co-Cr carrier system changes its coercive force in accordance with that Temperature. The temperature control including the temperature distribution of the Substrate therefore greatly affects the performance of the magnetic carrier. To create a film with a high coercive force carrier that Signal density condition of high density is fulfilled, it is necessary in the film production process sufficiently high temperature the temperature with large  Control accuracy to increase the magnetization of the NiB-plated substrate avoid. That by the steamer using the infrared temperature measuring device and the heating control method of the invention produced magnetic disks have a reduced fluctuation in the envelopes supplied uniform magnetic features in the circumferential direction.

Furthermore, the difference in properties between the plates reduced and the production yield increased.

Claims (30)

1. infrared temperature measuring device for detecting the infrared rays emitted by at least one object to be measured in temperature in a process chamber, using at least one infrared image device, and for measuring a two-dimensional temperature distribution of the measuring object, characterized in that the device removes stray light to reduce other infrared scattered rays in the Infrared rays to be introduced serve as the infrared rays emitted by the measurement object through the optical channel. 2. Apparatus according to claim 1, characterized in that the process chamber a process chamber with gas filling and / or a vacuum process chamber having. 3. Apparatus according to claim 1, characterized in that the process chamber in a section through which the emitted infrared rays enter the Atmosphere are directed, has an infrared window through which the infrared radiation passes through, the window having a compressive strength of atmospheric pressure or more. 4. Apparatus according to claim 1, characterized in that the optical path through which the infrared rays pass through, a smooth structure for isolation which has rays emitted by objects other than the measurement object, and an opening section through which those emitted by the measurement object Pass infrared rays through. 5. Apparatus according to claim 1, characterized in that the optical path through which the infrared rays pass through, an inner wall with one Has emissivity of 0.8 or more.   6. Device according to claims 1 or 5, characterized in that the optical path through which the infrared rays pass, an inner one Has wall that is roughened by a matting treatment. 7. Device according to any claim 1, 5 or 6, characterized in that the optical path, through which the infrared rays pass, with Water and / or is cooled with liquefied gas. 8. Apparatus according to claim 1, characterized in that a larger part of the optical path through which the infrared rays pass, on one side the process chamber is arranged, while the part by the Atmosphere runs to the minimum possible. 9. Apparatus according to claim 1, characterized in that the following measures are hit: the infrared windows are on both sides of the process chamber appropriate; an infrared temperature measuring device is on the Arranged on the atmosphere side of one of the infrared windows; a blackbody furnace to generate a reference temperature is on the atmospheric side of the other infrared window arranged; said flat structure of symmetrical Form is on the side of the process chambers of the two Infrared window attached; the blackbody oven can from the infrared temperature measuring device can be seen directly through the two infrared windows; and the calibration of the infrared temperature measuring device can be carried out using the Blackbody can be performed. 10. Process chamber, characterized by said infrared temperature measuring device according to claim 1. 11. Vacuum process chamber, characterized by the inclusion of the Infrared temperature measuring device according to claim 1. 12. Vacuum process chamber according to claims 10 or 11, characterized characterized in that the flange for holding the temperature measuring device with the heater flange of the process chamber and / or with the target flange is interchangeable.   13. Temperature measuring device with an infrared recording device for generation an infrared image by taking that from a heated substrate emitted infrared rays and with means for measuring the temperature the substrate by converting the infrared image into infrared temperature image information, characterized in that the device means the following comprises: means for dividing an infrared image recording area of the Substrates into a plurality of image pickup sections; Means to Converting the individual infrared image information, the spatial and temporally through the mentioned recording device in infrared temperature information are divided; Means for orderly storing the divided Infrared temperature image information and to assemble the stored Infrared image temperature information of the entire substrate by which Reproduce temperature distribution of the substrate as a whole. 14. Infrared temperature image measuring device according to claim 13, characterized in that it has the following means: a main control device with a control system for the spatial and temporal control of the subdivision means and for recording the plurality of infrared imaging areas of the Substrates; Means for storing the temperature information that is ordered into the infrared temperature image information based on the recorded Infrared image information is converted; and means to restore the temperature distribution of the entire substrate by assembling the stored infrared temperature image information of the entire substrate. 15. Infrared temperature image measuring device according to claims 13 or 14, characterized characterized in that the means for dividing and capturing the infrared imaging areas of the substrate in the multitude of segments Move the substrate in a constant direction, and that the substrate synchronized with partially divided the movement and the infrared image several times from the Infrared image recording device is recorded. 16. Infrared temperature image measuring device according to claims 13 or 14, characterized characterized in that the means for dividing and capturing the infrared imaging area of the substrate into the multitude of segments Move the substrate in a certain direction and the infrared images in Divide slit-like segments along a direction perpendicular to the  Direction of movement of the substrate, and that the device mentioned Infrared images in sequence through the infrared imaging device several times synchronously with the movement of the substrate. 17. Infrared temperature image measuring device according to claims 13 or 14, characterized characterized in that the means for dividing and recording the infrared image area of the substrate into the multitude of segments Mobility of the infrared image device in a predetermined measuring range allows, the infrared imaging device during the measurement of Infrared image of a segment is brought to a standstill, and that the Infrared imaging device takes the captured images several times while it moves in adjacent zones within an area, in which the device is movable. 18. Infrared temperature image measuring device according to claim 14, characterized in that external storage means for storing the infrared temperature image information of the entire substrate, this information temporarily stored in the named main control unit. 19. Infrared temperature image measuring method, characterized in that the infrared rays emitted from a heated substrate are recorded by an infrared imaging device to provide the infrared image as a brightness signal, and that the infrared image supplied is converted into infrared temperature image information for performing a temperature measurement of the substrate, the method following Steps:
Dividing the infrared region of the substrate into a plurality of segments and receiving the divided segments;
Converting the respective infrared image outputs that have been spatially and temporally divided and recorded by the image device into infrared temperature image outputs;
orderly storing the divided infrared temperature image outputs; and
Composing the infrared temperature image outputs of the entire substrate and restoring the temperature distribution of the entire substrate. 20. Heater with the following components: a heating device, the arranged opposite a substrate located in a heating chamber is; an infrared imaging device for receiving infrared rays emitted by the substrate heated by the heater are emitted, and for generating an infrared image; Temperature measuring devices for conversion the infrared image into infrared temperature image information, and for Performing a temperature measurement of the substrate; a temperature control device to control the temperature of the substrate based on a Starting means of said temperature measuring means, said temperature measuring means according to any one of claims 13, 14, 15, 16, 17 and 18 are designed; characterized in that the heater means for Calculate the difference to a prescribed temperature distribution of the Substrate, and temperature control means for implementing a digital Control signal generated based on the calculation output into one Has analog signal, and that this signal for controlling the temperature said heating device in a predetermined temperature distribution serves. 21. A heater according to claim 20, characterized in that the main control device of the infrared temperature image measuring device the means for calculation the difference from the prescribed temperature distribution of the substrate and the means for generating a digital control signal for controlling the Temperature control means included due to the calculation output. 22. A heater according to claim 20, characterized in that a plurality of mutually independent heating devices in the heating chamber are arranged according to a direction in which the temperature distribution is generated in the substrate, the control of the heat emission of this Means by the temperature control means is such that the Temperature distribution to a predetermined fixed temperature distribution brought. 23. Temperature control method for a heated substrate, in which the substrate held movably in the heating chamber is heated by a heating device; Infrared rays, which are emitted from the heated substrate, are recorded by an infrared image device for outputting an infrared image in the form of a brightness signal; the infrared image output signal is converted into infrared temperature image information for performing a temperature measurement of the substrate; and the temperature of the substrate is established and controlled based on the temperature output; characterized in that the temperature control method has the following steps as a method for measuring the temperature of the substrate:
Dividing the infrared image area of the substrate into a plurality of segments and taking the segment images;
Converting the infrared temperature image output of the respective, spatially and temporally divided segments into infrared temperature image outputs;
orderly storing the divided infrared temperature image outputs;
Assembling the stored infrared temperature image outputs of the whole substrate and restoring a temperature distribution of the whole substrate;
Calculating the deviation of the predetermined temperature distribution of a prescribed substrate;
Converting a digital control signal generated on the basis of the calculation output into an analog signal for regulating the temperature of the heating device in a predetermined temperature distribution. 24. Device for evaporating a vacuum thin film using one Sputtering process, a precipitation process, a CVD process, or the like, with a heating device for applying a heat treatment on a substrate assembly consisting of a substrate on which thin films are to be applied, and a device for holding the Substrates; an infrared imaging device for receiving infrared rays, which are emitted by the group of substrates and give an infrared image; an infrared temperature image measuring device for measuring the temperature of the Group of substrates, the device consisting of means for converting the infrared image  in infrared temperature image information, thereby characterized in that a route for heating the substrate in the Film evaporator and the distance to measure the temperature of the heated substrate assembly are spatially separated. 25. A film evaporation device according to claim 24, with a heater and a Infrared temperature image measuring device in the film evaporation device, characterized in that that the atmosphere in which the treated substrate assembly Infrared rays emitted differs from the atmosphere in which that Infrared temperature image measuring device for measuring the infrared temperature image of the Substrate mounting is arranged. 26. The film evaporation device according to claim 24, having a heater and an infrared temperature image measuring device in the film evaporation device, the heating control method being characterized by the following steps:
Heating the continuously transferred substrate assembly;
then, to be carried out after measuring the temperature distribution of the substrate assembly, calculating the deviation between the predetermined temperature distribution of the predetermined substrate assembly and the measured temperature distribution; and
Controlling the heat output of the heating device such that the substrate mounting that has been subjected to a measurement of the temperature distribution is regulated on the basis of the calculation of the deviation into a predetermined temperature distribution. 27. Film evaporation apparatus with a film application agent, in which a Loading chamber, a heating chamber, a film evaporation chamber and one Unloading chamber are arranged in a row, and a pallet feed system has a device through which a pallet is held, whereby openly present both surfaces of each disc to a large number of discs, the film evaporation device being an infrared temperature measuring device Claim 24 or 25 and the substrates by heating  Control method according to claim 26 heated and the damping method be subjected. 28. Film evaporation device with one or more vacuum chambers for Loading and unloading a substrate, for heating the substrate, and for Application of films on the substrate, and with a feed system for the continuous heating and the implementation of film deposition the substrates, one by one, with the film evaporation apparatus Infrared temperature measuring device according to claims 24 or 25, and wherein the substrates by the heating control method according to claim 26 heated and subjected to the coating. 29. Film evaporation device with film application means and with heating means in one or more vacuum chambers, in which a poligonal substrate holder for holding the substrate for heating and coating in Rotation is offset, and the film evaporator, the infrared temperature measuring device according to claims 24 or 25, wherein the substrate heated with the heating control method according to claim 26 and the Coating is subjected. 30. Magnetic recording plate, in the case of a substrate for the magnetic recording plate a magnetic carrier layer and a protective film through a Thin film deposition process and lubricant treatment thereon, and wherein the substrate using the Film evaporation apparatus according to claims 27 or 28 by Heating control method is heated according to claim 26, whereby a Distribution of the magnetic properties in the circumferential direction of the magnetic receiving plate is suppressed and no beating in the through magnetic conversion generated playback output signal per revolution the magnetic recording disc is generated.