JPH04174009A - Wafer driving device - Google Patents

Wafer driving device

Info

Publication number
JPH04174009A
JPH04174009A JP2297908A JP29790890A JPH04174009A JP H04174009 A JPH04174009 A JP H04174009A JP 2297908 A JP2297908 A JP 2297908A JP 29790890 A JP29790890 A JP 29790890A JP H04174009 A JPH04174009 A JP H04174009A
Authority
JP
Japan
Prior art keywords
wafer
reflecting mirror
length measuring
fixing means
axis direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2297908A
Other languages
Japanese (ja)
Inventor
Fumio Tabata
文夫 田畑
Hidenori Sekiguchi
英紀 関口
Toru Kamata
徹 鎌田
Yuji Sakata
裕司 阪田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2297908A priority Critical patent/JPH04174009A/en
Publication of JPH04174009A publication Critical patent/JPH04174009A/en
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Machine Tool Sensing Apparatuses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Control Of Position Or Direction (AREA)

Abstract

PURPOSE:To reduce an X and a Y stage in weight and size while reducing an Abbe error due to the positioning of a wafer by forming reflecting mirror surfaces on a specific end surface of a fixation means, and reflecting the beam of length measuring means by the reflecting mirror surfaces and positioning the wafer. CONSTITUTION:The wafer 2 is fixed to the attraction part of the fixation means 3b and driven by a driving means in a specific direction. The reflecting mirror surfaces are formed on the specific end surfaces 20x and 20y of the fixation means 3b and the beams 12a of the length measuring means 12X and 12Y is reflected by the reflecting mirror surfaces respectively to position the wafer 2. Consequently, the Abbe error due to the positioning of the wafer is reduced to position the wafer with high accuracy, and the driving means for driving the wafer is reduced in weight and size.

Description

【発明の詳細な説明】 〔概要〕 ウェハを吸着固定し、所定位置に駆動して処理を行うた
めのウェハ駆動装置に関し、 ウェハの位置決めにおけるアツベの誤差を低減しっつ、
Ｘ、Ｙステージの軽量小型化を図ることを目的とし、 ウェハを固定手段により固定して駆動手段により所定方
向に駆動し、ビームを用いる測長手段により該ウェハの
位置決めを行うウェハ駆動装置において、前記固定手段
の所定の端面に反射鏡面を形成し、該反射鏡面に前記測
長手段のビームを反射させて前記ウェハの位置決めを行
う構成とし、態様的には、前記反射鏡面は、前記固定手
段の直交する２つの端面に形成し、または、前記反射鏡
面は、前記固定手段の直交する総ての端面に形成し、該
各端面に応じた前記測長手段を複数個設ける。[Detailed Description of the Invention] [Summary] The present invention relates to a wafer drive device for suctioning and fixing a wafer and driving it to a predetermined position for processing, while reducing errors in positioning the wafer.
In a wafer drive device that aims to reduce the weight and size of the X and Y stage, the wafer is fixed by a fixing means, driven in a predetermined direction by a driving means, and the wafer is positioned by a length measuring means using a beam. A reflecting mirror surface is formed on a predetermined end surface of the fixing means, and the beam of the length measuring means is reflected on the reflecting mirror surface to position the wafer. Alternatively, the reflecting mirror surface is formed on all orthogonal end surfaces of the fixing means, and a plurality of the length measuring means are provided corresponding to each end surface.

〔産業上の利用分野〕[Industrial application field]

本発明は、ウェハを吸着固定し、所定位置に駆動して処
理を行うためのウェハ駆動装置に関する。The present invention relates to a wafer drive device for suctioning and fixing a wafer and driving it to a predetermined position for processing.

近年、ＬＳＩの高集積化に伴い、ウェハ（チップ）への
転写パターンの微細化か要求され、ウェハ駆動において
も高い位置決め精度か必要となる。In recent years, as LSIs have become highly integrated, there has been a demand for finer patterns to be transferred onto wafers (chips), and high positioning accuracy is also required in wafer drive.

また、ウェハの大口径化に伴い、大型のウェハ固定手段
か使用されて可動範囲も広くなり、装置の軽量小型化を
図る必要かある。Furthermore, as the diameter of the wafer becomes larger, a larger wafer fixing means is used and the movable range becomes wider, making it necessary to reduce the weight and size of the apparatus.

〔従来の技術〕[Conventional technology]

第５図に、従来のウェハ駆動装置の一例の構成図を示す
。第５図は露光装置（ステッパ）に適用された場合を示
したものである。FIG. 5 shows a configuration diagram of an example of a conventional wafer drive device. FIG. 5 shows a case where the present invention is applied to an exposure device (stepper).

第５図において、露光装置ｌは、ウェハ２がウェハチャ
ック３ａ上に吸引固定されており、該ウェハチャック３
ａはＸステージ４上に設けられる。In FIG. 5, the exposure apparatus l has a wafer 2 suctioned and fixed onto a wafer chuck 3a, and
a is provided on the X stage 4.

このＸステージ４はＸステージ５上でＸ軸方向に駆動さ
れ、Ｘステージ５は基台６上をＹ軸方向に駆動する。す
なわち、Ｘステージ４及びＸステージ６によりウェハ２
がＸ−Ｙ駆動される。This X stage 4 is driven on an X stage 5 in the X axis direction, and the X stage 5 is driven on a base 6 in the Y axis direction. In other words, the wafer 2 is
is driven in XY.

ウェハ２の上方には紫外線やＸ線等の光源７゜コンデン
サレンズ８．レチクル（又はマスク）９及び縮小投影レ
ンズ１０か設けられ、レチクル９上のパターンをウェハ
２上に転写する。Above the wafer 2 is a light source such as ultraviolet rays and X-rays 7. A condenser lens 8. A reticle (or mask) 9 and a reduction projection lens 10 are provided to transfer the pattern on the reticle 9 onto the wafer 2.

一方、Ｘステージ４の２辺上には、Ｌ字形の直交ミラー
１１が設けられており、Ｘ軸方向ミラー面Ｉ１．の位置
をレーザ干渉計１２．て計測し、Ｙ軸方向ミラー面１１
Ｙの位置をレーザ干渉計１２ｙで計測する。On the other hand, L-shaped orthogonal mirrors 11 are provided on two sides of the X stage 4, with X-axis direction mirror surfaces I1. The position of laser interferometer 12. and measure the mirror surface 11 in the Y-axis direction.
The position of Y is measured by the laser interferometer 12y.

このような露光装置１は、レチクル９上に描かれた微細
パターンを紫外線やＸ線等の光源７により縮小投影レン
ズ１０で例えばＩ１５に縮小されてウェハ２上に露光転
写される。この場合、ウェハ２はＸステージ４及びＸス
テージ５によりＸ−Ｙ駆動されて行われる。Ｘ−Ｙ駆動
は、Ｘ軸方向についてはレーザ干渉計１２にでミラー１
１の位置決めを行い、Ｙ軸方向についてはレーザ干渉計
１２、でミラー１１の位置決めを行う。In such an exposure apparatus 1, a fine pattern drawn on a reticle 9 is reduced to, for example, I15 by a reduction projection lens 10 using a light source 7 such as ultraviolet rays or X-rays, and is exposed and transferred onto a wafer 2. In this case, the wafer 2 is driven in the X-Y direction by the X stage 4 and the X stage 5. X-Y drive is performed by laser interferometer 12 and mirror 1 in the X-axis direction.
1, and in the Y-axis direction, the mirror 11 is positioned using a laser interferometer 12.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところで、本来測定すべき位置はウェハ２そのものの位
置であるか、直交ミラー１１とウェハチャック３とが分
離していることから、Ｘ、Ｘステージ４，５の変形や歪
等によって直交ミラー１１とウェハ２との位置の間にず
れを生じる、いわゆるアツベの誤差か生しるという問題
がある。By the way, the original position to be measured is the position of the wafer 2 itself, or since the orthogonal mirror 11 and the wafer chuck 3 are separated, the orthogonal mirror 11 and the There is a problem in that a misalignment with the wafer 2 occurs, a so-called Atsube error.

また、ウェハの大口径化に伴ってウェハチャック３ａも
大型化して、Ｘ、Ｘステージ４，５の質量の増大を招く
という問題かある。Furthermore, as the diameter of the wafer increases, the wafer chuck 3a also increases in size, resulting in an increase in the mass of the X and X stages 4 and 5.

そこで、本発明は上記課題に鑑みなされたもので、ウェ
ハの位置決めにおけるアツベの誤差を低減しつつ、Ｘ、
Ｙステージの軽量小型化を図るウェハ駆動装置を提供す
ることを目的とする。Therefore, the present invention was made in view of the above-mentioned problems, and while reducing the error in positioning the wafer,
It is an object of the present invention to provide a wafer drive device that reduces the weight and size of a Y stage.

〔課題を解決するための手段〕[Means to solve the problem]

第１図に本発明の原理説明図を示す。第１図において、
ウェハ２が固定手段（ウェハチャック）３ｂの吸着部３
ｃに固定され、図示しない駆動手段により所定方向に駆
動される。固定手段３ｂの所定の端面（Ｘ軸方向端面２
０Ｘ、Ｙ軸方向端面２０Ｙ）に反射鏡面を形成し、該反
射鏡面に測長手段１２Ｘ、１２．のビーム１２ａをそれ
ぞれ反射させて該ウェハ２の位置決めを行うものである
。FIG. 1 shows a diagram explaining the principle of the present invention. In Figure 1,
The wafer 2 is attached to the suction part 3 of the fixing means (wafer chuck) 3b.
c, and is driven in a predetermined direction by a driving means (not shown). A predetermined end surface of the fixing means 3b (X-axis direction end surface 2
A reflective mirror surface is formed on the end face 20Y in the Y-axis direction, and the length measuring means 12X, 12. The wafer 2 is positioned by reflecting each of the beams 12a.

また、図示しないが反射鏡面を、固定手段の直交する総
ての端面（端面２０．．２０ｙ及びこれに対向する端面
）に形成し、該各端面に応じた測長手段（１２ｘ　、　
　ｌ　２ｖ等）を複数個設ける。さらには、固定手段３
ｂの隣接する端面の境界付近（はぼ直交する付近）に、
弾性ヒンジ部を設けて切込み部を形成し、該切込み部に
より分割された部分間に角度調節手段を架設するもので
ある。Further, although not shown, reflective mirror surfaces are formed on all orthogonal end faces (end faces 20..20y and end faces opposite thereto) of the fixing means, and length measuring means (12
2v, etc.). Furthermore, the fixing means 3
Near the boundary of the adjacent end faces of b (near where they intersect perpendicularly),
An elastic hinge part is provided to form a notch part, and an angle adjustment means is installed between the parts divided by the notch part.

〔作用〕[Effect]

第１図に示すように、駆動する固定手段３ｂは、例えば
Ｘ軸方向の位置決めは測長手段１２工のビームをＸ軸方
向端面２０．の反射鏡面に反射させて測長し、Ｙ軸方向
も同様に行う。この場合、反射鏡面の形成は、ウェハ２
の大口径化による固定手段３ｂの大型化に伴い幅を十分
に確保てきるものである。As shown in FIG. 1, the driving fixing means 3b can position the beam of the length measuring means 12 in the X-axis direction, for example, by positioning the beam at the end face 20 in the X-axis direction. The length is measured by reflecting it on the reflecting mirror surface, and the same is done in the Y-axis direction. In this case, the formation of the reflective mirror surface is performed on the wafer 2.
As the fixing means 3b becomes larger due to the larger diameter of the fixing means 3b, a sufficient width can be secured.

これにより、別個に直交ミラーを設けることなく駆動手
段を軽量小型化することが可能となる。This makes it possible to reduce the weight and size of the driving means without separately providing an orthogonal mirror.

また、固定手段３ｂの位置を直接測長してウェハ２の位
置決めを行うことから、駆動手段の変形や歪等による測
長誤差を小さく抑えられ、アツベの誤差を低減すること
か可能となる。Furthermore, since the position of the fixing means 3b is directly measured to determine the position of the wafer 2, length measurement errors due to deformation or distortion of the driving means can be suppressed to a small level, and it is possible to reduce errors due to misalignment.

また、反射鏡面を固定手段３ｂの直交する総ての端面に
設けて、それぞれを対応する測長手段で測長することで
、アツベの誤差をより小さく抑えることが可能となる。Further, by providing reflective mirror surfaces on all orthogonal end faces of the fixing means 3b and measuring the length of each end face with a corresponding length measuring means, it is possible to further suppress the error in the thickness.

さらには、固定手段３ｂの各端面間の直交度を角度調節
手段により調節することで、直交度誤差をより小さくし
、高精度な位置決めを行うことが可能となる。Furthermore, by adjusting the degree of orthogonality between the end faces of the fixing means 3b using the angle adjustment means, it is possible to further reduce the degree of orthogonality error and perform highly accurate positioning.

〔実施例〕〔Example〕

第２図に本発明の一実施例の構成図を示す。第２図は、
例えば露光装置に適用した場合であり、第５図と同一構
成部分には同一の符号を付す。FIG. 2 shows a configuration diagram of an embodiment of the present invention. Figure 2 shows
For example, this applies to an exposure apparatus, and the same components as in FIG. 5 are given the same reference numerals.

第２図において、露光装置１は、ウェハ２が固定手段で
あるウェハチャック３ｂに真空吸着され、ウェハチャッ
ク３ｂはＸ軸方向の駆動手段であるＸステージ４上に搭
載される。Ｘステージ４はＹ軸方向の駆動手段であるＸ
ステージ５上に設けられ、ボールネジ（図示せず）でＸ
軸方向に駆動される。また、Ｘステージ５は基台６上に
設けられてボールネジ（図示せず）でＹ軸方向に駆動さ
れる。In FIG. 2, in the exposure apparatus 1, a wafer 2 is vacuum-adsorbed onto a wafer chuck 3b, which is a fixing means, and the wafer chuck 3b is mounted on an X stage 4, which is a driving means in the X-axis direction. The X stage 4 is a driving means in the Y-axis direction.
It is installed on the stage 5 and connected to the
Driven in the axial direction. Further, the X stage 5 is provided on a base 6 and driven in the Y-axis direction by a ball screw (not shown).

ウェハ２の上方には、第５図と同様に、例えば高圧水銀
ランプ等の光源７．コンデンサレンズ８゜レチクル（又
はマスク）９及び縮小投影レンズｌＯの光学系によって
構成され、光源７である水銀ランプから照射される紫外
線によってレチクル９上に形成されたパターンを縮小投
影レンズ１゜により例えば１１５に縮小してウェハ２上
に露光転写を行う。Above the wafer 2, as in FIG. 5, a light source 7, such as a high-pressure mercury lamp, is provided. It consists of an optical system consisting of a condenser lens 8°, a reticle (or mask) 9, and a reduction projection lens 10, and a pattern formed on the reticle 9 by ultraviolet rays emitted from a mercury lamp, which is a light source 7, is projected by a reduction projection lens 1°, for example. 115, and exposure transfer is performed on the wafer 2.

一方、ウェハチャック３ｂは、ヤング率の高い材料、例
えばセラミックで形成され、Ｘ軸方向端面２０ｘ及びＹ
軸方向端面２０ｙを研磨等により反射鏡面に形成される
。すなわち、ウェハチャック３ｂの材質は、ヤング率か
高いことから高精度に反射鏡面を形成することかできる
。この場合、ウェハ２の大口径化によるウェハチャック
３ｂの大型化に伴い、該ウェハチャック３ｂの厚さが増
すことから、各干渉計１２．、ｌ　２Ｙからのレーザビ
ーム１２ａの反射に必要な端面幅を十分確保てきるもの
である。On the other hand, the wafer chuck 3b is made of a material having a high Young's modulus, for example, ceramic, and has an end face 20x in the X-axis direction and
The axial end face 20y is formed into a reflective mirror surface by polishing or the like. That is, since the material of the wafer chuck 3b has a high Young's modulus, it is possible to form a reflective mirror surface with high precision. In this case, as the wafer chuck 3b becomes larger due to the larger diameter of the wafer 2, the thickness of the wafer chuck 3b increases, so each interferometer 12. , l2Y, the end face width necessary for reflection of the laser beam 12a from the laser beam 12a can be ensured sufficiently.

そこで、Ｘ軸方向端面２０ｘは、Ｘ軸方向の測長手段で
あるＸ軸し−ザ干渉計１２ｘの測長により位置決めされ
、Ｙ軸方向端面２０ｙはＹ軸方向の測長手段であるＹ軸
し−ザ干渉計１２Ｙの測長により位置決めされる。ここ
て、各レーザ干渉計１２Ｘ、１２Ｙは各端□面（反射鏡
面）に入射するレーザビーム１２ａとの干渉によって生
じる干渉縞を利用して測長するものである。Therefore, the end face 20x in the X-axis direction is positioned by the length measurement of the X-axis laser interferometer 12x, which is a length measuring means in the X-axis direction, and the end face 20y in the Y-axis direction is determined by the length measurement by the Y-axis The position is determined by length measurement by the laser interferometer 12Y. Here, each laser interferometer 12X, 12Y measures the length using interference fringes generated by interference with the laser beam 12a incident on each end □ surface (reflecting mirror surface).

すなわち、ウェハ２をＸ、　Ｙ駆動する場合に、ウェハ
チャック３ｂの位置をＸ、Ｙレーザ干渉計１２、．１２
．で測長して、該ウェハ２上の各位置でレチクル９のパ
ターンを露光転写するものである。That is, when the wafer 2 is driven in the X and Y directions, the position of the wafer chuck 3b is controlled by the X and Y laser interferometers 12, . 12
．． The pattern of the reticle 9 is exposed and transferred at each position on the wafer 2.

従って、ウェハチャック３ｂか直接レーザ測長用の反射
鏡面となっていることから、ウェハ２の位置計測におけ
るアツベの誤差を最小に抑えることができると共に、別
個にレーザミラーを設ける必要がなく、Ｘ、Ｙステージ
を軽量化を図ることかてきる。Therefore, since the wafer chuck 3b is a reflective mirror surface for direct laser length measurement, it is possible to minimize the error in position measurement of the wafer 2, and there is no need to provide a separate laser mirror. , it is possible to reduce the weight of the Y stage.

また、ウェハチャック３ｂの位置を直接に各レーザ干渉
計１２Ｘ、１２ｙで測長することから、Ｘ、Ｙステージ
４，５の変形や歪等による測長誤差を小さく抑えること
ができるものである。Furthermore, since the position of the wafer chuck 3b is directly measured by the laser interferometers 12X and 12y, length measurement errors due to deformation or distortion of the X and Y stages 4 and 5 can be suppressed.

次に、第３図に、本発明の第２の実施例の構成図を示す
。第３図における露光装置１は、固定手段であるウェハ
チャック３ｂの直交する総ての端面２０ｘ＋、　　２０
ｘ２．　２０ｖ＋、　　２０Ｙ２て研磨等により反射鏡
面を形成し、それぞれの端面２０□。Next, FIG. 3 shows a configuration diagram of a second embodiment of the present invention. The exposure apparatus 1 in FIG. 3 has all orthogonal end surfaces 20x+, 20 of a wafer chuck 3b, which is a fixing means.
x2. 20v+, 20Y2 are polished to form a reflective mirror surface, and each end face 20□.

２０ｘ□、２０Ｙ１，２０Ｙ２に応じた測長手段である
レーザ干渉計１２ｘ＋、１２ｘｔ、１２ｙ＋、　　１２
Ｙ２を設けたもので、他は第２図と同様である。この場
合、レーザ干渉計１２ｔ＋、　　１２ｔｘがＸ軸方向の
測長をし、レーザ干渉計１２□、１２ｙｚかＹ軸方向の
測長を行って、ウェハチャック３ｂ（ウェハ２）の位置
決めを行うものである。Laser interferometer 12x+, 12xt, 12y+, 12 which is a length measuring means according to 20x□, 20Y1, 20Y2
Y2 is provided, and the rest is the same as in FIG. 2. In this case, the laser interferometers 12t+ and 12tx measure the length in the X-axis direction, and the laser interferometers 12□ and 12yz measure the length in the Y-axis direction to position the wafer chuck 3b (wafer 2). be.

これは、ウェハチャック３ｂの熱変形か大きい場合に、
同軸方向のそれぞれ平行な２つの端面２０ｘ、、　　２
０ｘｘ　（２０ｙ＋、　　２０Ｙ２）て２つのレーザ干
渉計］　２ｘ１．　１２Ｘ２　（１２−１，１２−２）
により測長して該ウェハチャック３ｂの熱変形量を検出
することにより、アラへの誤差をより小さく抑えようと
するものである。This occurs when the thermal deformation of the wafer chuck 3b is large.
Two parallel end faces 20x, 2 in the coaxial direction
0xx (20y+, 20Y2) and two laser interferometers] 2x1. 12X2 (12-1, 12-2)
By measuring the length of the wafer chuck 3b and detecting the amount of thermal deformation of the wafer chuck 3b, the error in the roughness is further suppressed.

次に、第４図に、本発明の第３の実施例の概略図を示す
。第４図は、固定手段であるウェハチャック３ｂの隣接
する２つの端面（Ｘ軸方向端面２０Ｘ、Ｘ軸方向端面２
０Ｙ）の境界付近に弾性ヒンジ部２１が切込み部２２を
形成し、該切込み部２２て分割された部分間に、角度調
節手段である移動分解能の高いアクチュエータの圧電素
子２３を架設したものである。この圧電素子２３に電圧
を印加すると伸縮する。すなわち、一般にウェハチャッ
ク３ｂにおける端面の直交度の誤差を零にすることは困
難であり、圧電素子２３により一端面（Ｘ軸方向端面２
０Ｙ）の傾きを変化させて直交する端面（Ｘ軸方向端面
２０ｘ）との直交度誤差を小さくしようとするものであ
る。なお、第４図では、２つの端面間について説明した
か、他の直交する端面（第３図の端面２０Ｘ２゜２０　
Ｙ２）にも適用することにより、対角部分の直交度誤差
を小さくすることかできる。Next, FIG. 4 shows a schematic diagram of a third embodiment of the present invention. FIG. 4 shows two adjacent end surfaces (X-axis direction end surface 20X, X-axis direction end surface 20X,
The elastic hinge part 21 forms a notch part 22 near the boundary of 0Y), and a piezoelectric element 23 of an actuator with high movement resolution, which is an angle adjustment means, is installed between the parts divided by the notch part 22. . When a voltage is applied to this piezoelectric element 23, it expands and contracts. That is, it is generally difficult to reduce the error in the orthogonality of the end faces of the wafer chuck 3b to zero, and the piezoelectric element 23
0Y) to reduce the orthogonality error with the orthogonal end surface (X-axis direction end surface 20x). In addition, in FIG. 4, the explanation has been made between two end surfaces, or other orthogonal end surfaces (end surfaces 20×2°20 in FIG. 3).
By applying this to Y2), it is possible to reduce the orthogonality error in the diagonal portion.

なお、上記実施例では本発明のウェハ駆動装置を露光装
置に適用する場合を示したか、露光処理に限られるもの
ではない。It should be noted that although the above embodiments show the case where the wafer driving device of the present invention is applied to an exposure device, the application is not limited to exposure processing.

〔発明の効果〕〔Effect of the invention〕

以上のように本発明によれば、固定手段の端面で反射鏡
面を形成することにより、ウェハの位置決めにおけるア
ツベの誤差を低減して高精度な位置決めを行うことかで
き、ウェハの駆動のための駆動手段を軽量小型とするこ
とかできる。また、固定手段の端面間を角度調節手段に
より直交度誤差を小さくすることで、ウェハのより高精
度な位置決めを行うことかできる。As described above, according to the present invention, by forming a reflective mirror surface on the end face of the fixing means, it is possible to reduce errors in wafer positioning and perform highly accurate positioning, and The driving means can be made lightweight and small. Further, by reducing the orthogonality error between the end faces of the fixing means by using the angle adjusting means, the wafer can be positioned with higher precision.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の原理説明図、 第２図は本発明の一実施例の構成図、 第３図は本発明の第２の実施例の構成図、第４図は本発
明の第３の実施例の概略図、第５図は従来のウェハ駆動
装置の一適用例の構成図である。 図において、 ｌは露光装置、 ２はウェハ、 ３ａ、３ｂはウェハチャック、 ４はＸステージ、 ５はＹステージ、 ６は基台、 ７は光源、 ８はコンデンサレンズ、 ９はレチクル、 １０は縮小投影レンズ、 １２ｘはＸ軸し−ザ干渉計、 １２７はＹ軸し−ザ干渉計、 １２ａはレーザビーム、 ２０ＸはＸ軸方向端面（反射鏡面）、 ２０７はＸ軸方向端面（反射鏡面）、 ２１は弾性ヒンン部、 ２２は切込み部、 ２３は圧電素子 を示す。 特許出願人　富　士　通　株式会社 杢１シ川の題字わ１蘭 第１図 第４図 １露光装量 第５図Fig. 1 is a diagram explaining the principle of the present invention, Fig. 2 is a block diagram of an embodiment of the present invention, Fig. 3 is a block diagram of a second embodiment of the present invention, and Fig. 4 is a block diagram of a third embodiment of the present invention. FIG. 5 is a schematic diagram of an example of the conventional wafer drive device. In the figure, l is an exposure device, 2 is a wafer, 3a and 3b are wafer chucks, 4 is an X stage, 5 is a Y stage, 6 is a base, 7 is a light source, 8 is a condenser lens, 9 is a reticle, and 10 is a reduction Projection lens, 12x is an X-axis interferometer, 127 is a Y-axis interferometer, 12a is a laser beam, 20X is an end surface in the X-axis direction (reflecting mirror surface), 207 is an end surface in the X-axis direction (reflecting mirror surface), 21 is an elastic hinge portion, 22 is a notch portion, and 23 is a piezoelectric element. Patent Applicant: Fujitsu Co., Ltd. Mokuichi Co., Ltd. Title: W1 Ran Figure 1 Figure 4 1 Exposure amount Figure 5

Claims (1)

【特許請求の範囲】 ［１］ウェハ（２）を固定手段（３ｂ）により固定して
駆動手段（４、５）により所定方向に駆動し、ビーム１
２ａを用いる測長手段（１２＿Ｘ、１２＿Ｙ）により該
ウェハ（２）の位置決めを行うウェハ駆動装置において
、 前記固定手段（３ｂ）の所定の端面（２０＿Ｘ、２０＿
Ｙ）に反射鏡面を形成し、該反射鏡面に前記測長手段（
１２＿Ｘ、１２＿Ｙ）のビーム（１２ａ）を反射させて
前記ウェハ（２）の位置決めを行うことを特徴とするウ
ェハ駆動装置。 ［２］前記反射鏡面は、前記固定手段（３ｂ）の直交す
る２つの端面（２０＿Ｘ、２０＿Ｙ）に形成することを
特徴とする請求項［１］記載のウェハ駆動装置。 ［３］直交する総ての端面（２０＿Ｘ＿１、２０＿Ｘ＿
２、２０＿Ｙ＿１、２０＿Ｙ＿２）に形成し、該各端面
（２０＿Ｘ＿１、２０＿Ｘ＿２、２０＿Ｙ＿１、２０＿
Ｙ＿２）に応じた前記測長手段（１２＿Ｘ＿１、１２＿
Ｘ＿２、１２＿Ｙ＿１、１２＿Ｙ＿２）を複数個設ける
ことを特徴とする請求項［１］記載のウェハ駆動装置。 ［４］前記固定手段（３ｂ）の隣接する端面の境界付近
に、 弾性ヒンジ部（２１）を設けて切込み部（２２）を形成
し、 該切込み部（２２）により分割された部分間に角度調節
手段（２３）を架設することを特徴とする請求項［１］
、［２］又は［３］記載のウェハ駆動装置。[Claims] [1] The wafer (2) is fixed by the fixing means (3b) and driven in a predetermined direction by the driving means (4, 5), and the beam 1 is
In the wafer drive device that positions the wafer (2) by length measuring means (12_X, 12_Y) using length measuring means (12_X, 12_Y) using the fixing means (3b),
A reflecting mirror surface is formed on the reflecting mirror surface, and the length measuring means (Y) is formed on the reflecting mirror surface.
A wafer driving device characterized in that the wafer (2) is positioned by reflecting a beam (12a) of the beams (12_X, 12_Y). [2] The wafer driving device according to claim 1, wherein the reflective mirror surface is formed on two orthogonal end surfaces (20_X, 20_Y) of the fixing means (3b). [3] All orthogonal end faces (20_X_1, 20_X_
2, 20_Y_1, 20_Y_2), and each end surface (20_X_1, 20_X_2, 20_Y_1, 20_
The length measuring means (12_X_1, 12_
The wafer drive device according to claim 1, wherein a plurality of wafers (X_2, 12_Y_1, 12_Y_2) are provided. [4] An elastic hinge portion (21) is provided near the boundary between adjacent end surfaces of the fixing means (3b) to form a notch (22), and an angle is formed between the portions divided by the notch (22). Claim [1] characterized in that the adjustment means (23) is constructed.
, [2] or [3].
JP2297908A 1990-11-02 1990-11-02 Wafer driving device Pending JPH04174009A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2297908A JPH04174009A (en) 1990-11-02 1990-11-02 Wafer driving device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2297908A JPH04174009A (en) 1990-11-02 1990-11-02 Wafer driving device

Publications (1)

Publication Number Publication Date
JPH04174009A true JPH04174009A (en) 1992-06-22

Family

ID=17852654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2297908A Pending JPH04174009A (en) 1990-11-02 1990-11-02 Wafer driving device

Country Status (1)

Country Link
JP (1) JPH04174009A (en)

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