JPH04170077A - Pyroelectric infrared detector and manufacturing of the same - Google Patents
Pyroelectric infrared detector and manufacturing of the sameInfo
- Publication number
- JPH04170077A JPH04170077A JP2298002A JP29800290A JPH04170077A JP H04170077 A JPH04170077 A JP H04170077A JP 2298002 A JP2298002 A JP 2298002A JP 29800290 A JP29800290 A JP 29800290A JP H04170077 A JPH04170077 A JP H04170077A
- Authority
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- Japan
- Prior art keywords
- substrate
- pyroelectric
- thin film
- organic thin
- infrared detector
- Prior art date
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- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000010409 thin film Substances 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 239000012790 adhesive layer Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 230000010287 polarization Effects 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 11
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 239000004593 Epoxy Substances 0.000 abstract description 2
- 229920001721 polyimide Polymers 0.000 description 7
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は焦電薄膜を用いて赤外線を検出する焦電型赤外
線検出器およびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a pyroelectric infrared detector that detects infrared rays using a pyroelectric thin film and a method for manufacturing the same.
従来の技術
従来、焦電型の赤外線検出器には、チタン酸鉛系のセラ
ミックやタンタル酸リチウムの単結晶などのバルク材料
が用いられてきた。近年、焦電材料を薄膜化し、フォト
リソなどの微細加工技術を応用して、素子の小型化や高
密度アレイ化に適応できる焦電型赤外線検出器が開発さ
れつつある。BACKGROUND OF THE INVENTION Conventionally, bulk materials such as lead titanate-based ceramics and lithium tantalate single crystals have been used in pyroelectric infrared detectors. In recent years, pyroelectric infrared detectors that can be adapted to smaller elements and higher-density arrays have been developed by thinning pyroelectric materials and applying microfabrication techniques such as photolithography.
特に、薄膜焦電材料のうち、ペロプスカイト型の結晶構
造を有するチタン酸鉛系の焦電薄膜は、スパッタリング
法によって成膜することによ）、基板に対してＣ軸配向
し、分極処理を施さなくても分極の方向が一方向にそろ
った薄膜が得られる。In particular, among thin-film pyroelectric materials, lead titanate-based pyroelectric thin films with a perovskite-type crystal structure are formed by sputtering), and are C-axis oriented with respect to the substrate and subjected to polarization treatment. Even without this, a thin film with polarization aligned in one direction can be obtained.
この現象はＭ９０単結晶基板上やＭ（ＪＯ単結晶上に（
１００）配向したｐｔ薄膜上などの限られた基板材料上
への成膜においてのみ確認されている。This phenomenon is observed on M90 single crystal substrate and M(JO single crystal).
100) It has been confirmed only in film formation on limited substrate materials such as oriented PT thin films.
特に、ＰｂｘＬａ、Ｔｉ、２１ｗ０３ で表わされ、（
ａ） ０．７≦Ｘ≦１．０．９≦” 十ｙ ＜ ’
ｅα９５≦ｚ≦１゜Ｗ＝Ｏ
（ｂ） ｘ＝１．７＝Ｏ，α４６≦ｚ（１、ｚ 十
ｗ＝１（ｃ＋） ０．８３≦Ｘ≦１ 、Ｘ＋７＝１．
０．６≦ｚ（１０，９６≦ｚ＋ｗ≦１
のいずれかの組成を有する焦電薄膜において顕著な現象
である。これらのＣ軸配向したチタン酸鉛系の焦電ＫＭ
は、赤外線の検出能力も高いことから、焦電型赤外線検
出器の小型化や高密度アレイ化に最も適した材料である
。In particular, it is expressed as PbxLa, Ti, 21w03, (
a) 0.7≦X≦1.0.9≦" y <'
eα95≦z≦1゜W=O (b) x=1.7=O, α46≦z(1, z 10w=1(c+) 0.83≦X≦1, X+7=1.
This is a remarkable phenomenon in pyroelectric thin films having a composition of 0.6≦z (10,96≦z+w≦1).These C-axis oriented lead titanate-based pyroelectric KMs
Because it has a high ability to detect infrared rays, it is the most suitable material for miniaturizing pyroelectric infrared detectors and creating high-density arrays.
具体的な焦電薄膜材料を用いた赤外線検出器の構成を第
３図に示す。焦電素子は、焦電薄膜−１と両面のｔ極２
，３とによって構成され、との焦電素子が穴の開いた基
板４の穴の中心に、有機薄膜６によって支持されている
。電極２の引出し部分は有機薄膜６の中に埋め込まれ、
裏面全面に作製されたｗＬ電極との間での絶縁を保って
おシ、焦電素子の出力は［極２の引呂し部分と電極３の
間の起電力として得られる。焦電型の赤外線検出器は、
吸収した赤外線による素子の温度上昇を電気信号に変換
しているため、焦電素子の裏面の基板４に穴を開け、焦
電素子から基板への熱伝導をできるだけ少なくして効率
よ〈熱上昇が行なえる構成としている。また、赤外線の
入射は裏面の電極３側から行ない、焦電薄膜１に直接赤
外線を吸収させ、効率のよい赤外線の検出を行なってい
る。通常、受光側電極には赤外線反射率の小さい薄いニ
クロムが使われている。FIG. 3 shows the configuration of an infrared detector using a specific pyroelectric thin film material. The pyroelectric element consists of a pyroelectric thin film-1 and t-poles 2 on both sides.
, 3, and a pyroelectric element is supported by an organic thin film 6 at the center of a hole in a substrate 4 having a hole. The lead-out portion of the electrode 2 is embedded in the organic thin film 6,
The output of the pyroelectric element is obtained as an electromotive force between the closed portion of the pole 2 and the electrode 3 while maintaining insulation from the wL electrode fabricated on the entire back surface. The pyroelectric infrared detector is
Since the temperature rise of the element due to absorbed infrared rays is converted into an electrical signal, a hole is made in the substrate 4 on the back side of the pyroelectric element to minimize heat conduction from the pyroelectric element to the substrate to improve efficiency. The structure is such that this can be done. Further, the infrared rays are incident from the electrode 3 side on the back surface, and the pyroelectric thin film 1 directly absorbs the infrared rays, thereby achieving efficient infrared detection. Normally, thin nichrome, which has low infrared reflectivity, is used for the light-receiving electrode.
この作製プロセスを第４図を用いて説明する。This manufacturing process will be explained using FIG. 4.
まず、基板４上の一部に焦電薄膜１を成膜する。First, the pyroelectric thin film 1 is formed on a part of the substrate 4.
この全面に感光性の有機薄膜５を塗布し、乾燥した後、
紫外線による露光と現像によって、有機薄膜６のうちの
焦電薄膜１と電極２との導通をとる部分を取シ除き、有
機薄膜６を熱硬化させる。この上に電極２の成膜とパタ
ーニングを行ない、さらに感光性の有機薄膜５′を塗布
し、乾燥した後、紫外線による鱈光と現像によって、有
機薄膜６′のうちの電極２の出力を埴シ出す部分を取シ
除く。After coating the entire surface with a photosensitive organic thin film 5 and drying it,
By exposure to ultraviolet light and development, a portion of the organic thin film 6 that establishes conduction between the pyroelectric thin film 1 and the electrode 2 is removed, and the organic thin film 6 is thermally cured. On top of this, the electrode 2 is formed and patterned, and then a photosensitive organic thin film 5' is applied. After drying, the output of the electrode 2 of the organic thin film 6' is reduced by UV light and development. Remove the exposed part.
基板４の裏面に７オトレジヌト６を塗布し、基板を残す
部分を保護した後、基板４の一部をエツチング除去する
。フォトレジスト６を除去した後、裏面全面にｔ極３を
形成している。After coating the back surface of the substrate 4 with 7-to-resinut 6 to protect the portion where the substrate remains, a part of the substrate 4 is removed by etching. After removing the photoresist 6, a t-pole 3 is formed on the entire back surface.
発明が解決しようとする課題
従来例の赤外線検出器に用いる基板は、容易にエツチン
グできる材料でなくてはならず、さらに″ｔ５＋極軸方
向に配向した焦電薄膜を用いる場合、使用可能な基板が
極端に限定される。Problems to be Solved by the Invention The substrate used in the conventional infrared detector must be made of a material that can be easily etched, and furthermore, when a pyroelectric thin film oriented in the t5+ polar axis direction is used, there are no usable substrates. is extremely limited.
また、従来の焦電薄膜を用いた赤外線検出器では、焦電
薄膜の寸法と基板の穴の寸法の間にかなシマージンを取
らなくてはならず、焦電素子自体を小さくすることがで
きても検出器全体はあｇ小さくすることができない。In addition, in conventional infrared detectors using pyroelectric thin films, a small margin must be maintained between the dimensions of the pyroelectric thin film and the dimensions of the hole in the substrate, making it possible to reduce the size of the pyroelectric element itself. However, the entire detector cannot be made smaller.
まず第１Ｋ、エツチングされた基板の側面がどうしても
斜めになるため、この寸法を考慮しなくてはならない。First, the side surface of the etched substrate is inevitably oblique, so this dimension must be taken into consideration.
また、この斜め部分が急峻であると電極３の導通が取れ
なくなり、歩留１シが低下することから、この部分の寸
法は基板の厚さ以上であることが望ましい。Furthermore, if this diagonal portion is steep, the electrode 3 will not be electrically conductive and the yield will be reduced, so it is desirable that the dimension of this portion be equal to or greater than the thickness of the substrate.
次に、実際にエツチングされる基板の寸法のばらつきを
考慮しなくてはならない。基板エツチングには長時間か
かるため、レジストと基板との間へのエツチング液の浸
透が無視できなくなシ、実際にエツチング除去された部
分の寸法は、設計値から大きくばらつく。Next, it is necessary to take into account variations in the dimensions of the substrate to be actually etched. Since substrate etching takes a long time, penetration of the etching solution into the space between the resist and the substrate cannot be ignored, and the dimensions of the portion actually etched away vary widely from the designed values.
さらに、マージンとして基板エツチングのパターンずれ
を考慮しなくてはならない。基板の表と裏のパターン合
わせが必要で、合わせるパターン間が離れているためパ
ターンずれが生じ易い。Furthermore, the pattern shift of substrate etching must be considered as a margin. It is necessary to match the patterns on the front and back sides of the substrate, and because the patterns to be matched are far apart, pattern misalignment is likely to occur.
従って、マージンどして、基板の斜め部分の寸法、エツ
チング寸法のばらつき、パターンずれの３点を見越した
以上の寸法が必要となる。Therefore, the margin needs to be larger than the dimensions of the diagonal portion of the substrate, variations in etching dimensions, and pattern misalignment.
本発明は、上記問題点を解決するもので、小型で歩留ま
シの高い焦電型赤外線検出器を提供することを目的とす
るものである。The present invention solves the above problems, and aims to provide a pyroelectric infrared detector that is small and has a high yield.
課題を解決するための手段
第１基板上に焦電素子を作製し、全面を有機薄膜で後っ
た上に、穴を設けた第２基板を貼シ合わせ、第１基板を
エツチング除去することによシ、前記有機薄膜によって
前記焦電素子が前記第２基板の穴の内部に支持された構
成を実現する。Means to Solve the Problem: Fabricate a pyroelectric element on a first substrate, cover the entire surface with an organic thin film, bond a second substrate with holes, and remove the first substrate by etching. Alternatively, the organic thin film realizes a structure in which the pyroelectric element is supported inside the hole of the second substrate.
作 用
上記手段のように、あらかじめ穴を設けた基板と有機薄
膜を塗布した焦電素子とを貼シ合わせることによって、
色々な基板材料を用いることができる。例えば、ガラス
エポキシなどの回路基板に用いられる材料を用い、検出
器と周辺回路を同一基板上に作製することによって、装
置全体を小型化することができる。Effect As in the above method, by bonding together a substrate with holes in it and a pyroelectric element coated with an organic thin film,
A variety of substrate materials can be used. For example, by fabricating the detector and peripheral circuitry on the same substrate using a material used for circuit boards, such as glass epoxy, the entire device can be miniaturized.
従来例では基板の穴の側面が斜めであることが問題であ
ったが、本発明では穴の側面が垂直に切シ立った基板を
用いることができる。穴の側面を垂直にしたとしても、
二つの電極のどちらの引き回し部分も、連続かつ平坦な
面上に作製されるため、従来例のように電極の断線によ
る不良は起こらない。また、本発明では第１基板を全面
エツチングし除去しているため、従来例のようなエツチ
ング寸法のばらつきやパターンずれなどの問題は起こら
ない。In the conventional example, there was a problem that the side surfaces of the hole in the substrate were oblique, but in the present invention, a substrate in which the side surface of the hole is vertically cut can be used. Even if the sides of the hole are vertical,
Since both of the lead-out portions of the two electrodes are fabricated on a continuous and flat surface, defects due to disconnection of the electrodes do not occur as in the conventional example. Further, in the present invention, since the entire first substrate is etched and removed, problems such as variations in etching dimensions and pattern deviations that occur in the conventional example do not occur.
従って、本発明における焦電素子と基板の穴の間のマー
ジンは極めて少なくて済み、小型の赤外線検出器を実現
できる。Therefore, the margin between the pyroelectric element and the hole in the substrate in the present invention can be extremely small, making it possible to realize a compact infrared detector.
また、第１基板を全面エツチングするため、エツチング
される面に段差がなく、全面が均一にエツチングされ、
エツチングの終点における焦電薄膜のダメージを最小限
に抑えることができる。In addition, since the entire surface of the first substrate is etched, there are no steps on the etched surface, and the entire surface is uniformly etched.
Damage to the pyroelectric thin film at the end point of etching can be minimized.
実施例
本発明における焦電型赤外線検出器の一実施例の構成を
第１図に、その作製プロセスを第２図に示す。第１基板
１１としてＭｇｏ単結晶を用い、この上に焦電薄膜１２
としてＰ ｂ ｏ 、ｓＬ ａｏ 、 １”０．９７５
０３の組成でペロブヌカイト型の結晶構造を有し、基板
１１に対してＣ軸配向した焦電薄膜を、スパッタリング
法によシ成膜した。この組成の焦電薄膜は、チタン酸鉛
系の焦電薄膜の中でも特に赤外線検出器の材料として優
れている。この焦電薄膜１２と基板１１上に１１００ｎ
のＮｉＣｒ薄膜を成膜し、電極１３とその引き回し部分
を形成した。この全面に有機薄膜１４としてポリイミド
樹脂を塗布・仮硬化し、さらに全面に接着層１５として
同じポリイミド樹脂を塗布し、第２基板１６と貼シ合わ
せた後、有機薄膜１４と接着層１６を完全に硬化した。Embodiment FIG. 1 shows the structure of an embodiment of the pyroelectric infrared detector according to the present invention, and FIG. 2 shows the manufacturing process thereof. A Mgo single crystal is used as the first substrate 11, and a pyroelectric thin film 12 is placed on it.
As P b o , sL ao , 1”0.975
A pyroelectric thin film having a composition of No. 03, having a perovnukite crystal structure, and C-axis oriented with respect to the substrate 11 was formed by a sputtering method. A pyroelectric thin film with this composition is particularly excellent as a material for an infrared detector among lead titanate-based pyroelectric thin films. 1100n on this pyroelectric thin film 12 and substrate 11
A NiCr thin film was formed to form the electrode 13 and its routing portion. A polyimide resin is applied and temporarily cured as an organic thin film 14 on this entire surface, and the same polyimide resin is further applied on the entire surface as an adhesive layer 15, and after bonding with the second substrate 16, the organic thin film 14 and adhesive layer 16 are completely bonded. hardened to.
最後に、第１基板１１をリン酸によってエツチング除去
し、基板１１を除去した面に１０ｎｍのＮ ｉ Ｃｒを
成膜し、電極１７とその引き回し部分を形成した。基板
１１をエツチング除去した面が平坦であるため、従来例
では行えない、裏面電極のパターニングを容易に行なう
ことができた。第１図に示した構成は、第２図のプロセ
スが終了したものの上下を反転しておシ、電極１７側か
ら赤外線の入射を行なう。Finally, the first substrate 11 was removed by etching with phosphoric acid, and a 10 nm thick NiCr film was formed on the surface from which the substrate 11 was removed, thereby forming the electrode 17 and its routing portion. Since the etched surface of the substrate 11 is flat, it was possible to easily pattern the back electrode, which could not be done in the conventional example. In the configuration shown in FIG. 1, the process shown in FIG. 2 is completed, but the structure is turned upside down and infrared rays are incident from the electrode 17 side.
第２基板１６にはポリイミドのフィルムを用いておシ、
型抜きで簡単に断面が垂直な穴を開けることができ、−
枚の基板に複数の赤外線検出器を作シ込んだ場合、それ
ぞれの素子分離も容易に行なうことができた。ポリイミ
ドフィルムには、銅箔の配線パターンを設けたものを用
い、検出器と同じ基板上に周辺回路も実装し、装置の小
型化を図ることができた。また、ポリイミドは柔軟性が
あシ赤外線検出器を曲面状に設置することも可能である
。A polyimide film is used for the second substrate 16,
You can easily make a hole with a vertical cross section by cutting a die, and -
When multiple infrared detectors were fabricated on a single substrate, each element could be easily separated. A polyimide film with a copper foil wiring pattern was used, and peripheral circuits were mounted on the same board as the detector, making the device more compact. Furthermore, since polyimide is flexible, it is also possible to install an infrared detector in a curved shape.
また、従来例の有機薄膜５とσには、電極２の導通を取
る穴を設けるために、感光性のポリイミド樹脂を用いて
２回のパターニングを行なっておシ、樹脂の硬化も２回
行なわなくてはならず、プロセスが複雑で時間がかかる
。実際、エツチング液への耐性を確保するためには１回
につき４時間和度熱処理が必要であった。一方、本発明
の場合、有機薄膜１４と接着層１６ともパターニングの
必要がなく有機薄膜１４を１０分程度仮硬化するだけ÷
連続して塗布できる。よって、通常のポリイミド樹脂が
使用でき、実質１回の硬化で済むため、プロセスが単純
で時間の短縮ができる。In addition, in order to provide a hole for electrical conduction of the electrode 2 in the organic thin film 5 and σ of the conventional example, patterning was performed twice using a photosensitive polyimide resin, and the resin was also hardened twice. The process is complex and time-consuming. In fact, in order to ensure resistance to the etching solution, it was necessary to perform a gentle heat treatment for 4 hours each time. On the other hand, in the case of the present invention, there is no need for patterning of the organic thin film 14 and the adhesive layer 16, and the organic thin film 14 only needs to be temporarily cured for about 10 minutes.
Can be applied continuously. Therefore, a normal polyimide resin can be used and only one curing process is required, so the process is simple and time can be shortened.
さらに本発明の赤外線検出器は、その実装においても有
利である。従来例の検出器のように裏面から赤外線を受
光する場合、検出器を固定するノくッケージのペースに
も赤外線を通す窓を設けなくてはならない。ペースに穴
を設けることは、ノくツケージのコスト増大を招くだけ
でなく、ペース側に出ているビンやパッケージを固定す
る配線基板が邪魔をして、光学系の設計を制限する恐れ
がある。本発明では、基板に対して表から受光するだめ
、このような問題は生じない。Furthermore, the infrared detector of the present invention is advantageous in its implementation. When receiving infrared rays from the back side like the conventional detector, it is necessary to provide a window through which infrared rays can pass through the cage that fixes the detector. Providing a hole in the pace not only increases the cost of the screw cage, but it also interferes with the wiring board that fixes the bottle and package protruding from the pace, potentially limiting the design of the optical system. . In the present invention, such a problem does not occur because the light is received from the front side of the substrate.
本実施例には、１個の焦電型赤外線検出器について示し
ているが、焦電素子を複数個ならべたアレイセンサの作
製においても全く同様の効果が得られる。In this embodiment, one pyroelectric infrared detector is shown, but the same effect can be obtained by manufacturing an array sensor in which a plurality of pyroelectric elements are arranged.
発明の効果
本発明によれば、小型で歩留まりの高い焦電型赤外線検
出器を実現でき、さらにその作製プロセスの簡略北本時
間の短縮を行なうことができる。Effects of the Invention According to the present invention, it is possible to realize a pyroelectric infrared detector that is small and has a high yield, and furthermore, it is possible to simplify the manufacturing process and shorten the Kitamoto time.
における焦電型赤外線検出器およびその作製プロセスを
示す断面図である。FIG. 2 is a cross-sectional view showing a pyroelectric infrared detector and its manufacturing process.
１１・・・・・・第１基板、１２・・・・・・焦電薄膜
、１３・・・・・・電極、１４・・・・・・有機薄膜、
１６・・・・・・接着層、１６・・・・・・第２基板、
１７・・・・・・電極。11...First substrate, 12...Pyroelectric thin film, 13...Electrode, 14...Organic thin film,
16... Adhesive layer, 16... Second substrate,
17... Electrode.
代理人の氏名 弁理士 小鍜治 明 Ｉ／１か２名、
、−、！！儒ヒｉｑ罠Name of agent: Patent attorney Akira Okaji I/1 or 2;
,-,! ! Confucian Hiq Trap
Claims (10)
焦電素子とを備え、前記基板上に前記有機薄膜が接着支
持され、前記有機薄膜上に前記焦電素子が設けられてい
る焦電型赤外線検出器。(1) A pyroelectric element comprising a substrate, an organic thin film, and a pyroelectric element smaller than the organic thin film, wherein the organic thin film is adhesively supported on the substrate, and the pyroelectric element is provided on the organic thin film. Electric type infrared detector.
焦電素子とを備え、前記基板の周囲に前記焦電素子の信
号を処理する回路が実装され前記基板上に前記有機薄膜
が接着支持され、前記有機薄膜上に前記焦電素子が設け
られている焦電型赤外線検出器。(2) A substrate, an organic thin film, and a pyroelectric element smaller than the organic thin film, a circuit for processing a signal of the pyroelectric element is mounted around the substrate, and the organic thin film is adhered to the substrate. A pyroelectric infrared detector is supported, and the pyroelectric element is provided on the organic thin film.
焦電素子が前記基板の穴の概ね中央に設置された請求項
１記載の焦電型赤外線検出器。(3) The pyroelectric infrared detector according to claim 1, wherein the pyroelectric element is smaller than the hole provided in the substrate, and the pyroelectric element is installed approximately in the center of the hole in the substrate.
ていない上面が、略連続で平坦である請求項１記載の焦
電型赤外線検出器。(4) The pyroelectric infrared detector according to claim 1, wherein the upper surface of the organic thin film and the upper surface of the pyroelectric thin film that is not covered with the organic thin film are substantially continuous and flat.
薄膜と同種の樹脂からなる請求項１記載の焦電型赤外線
検出器。(5) The pyroelectric infrared detector according to claim 1, wherein the adhesive layer that adheres the organic thin film and the substrate is made of the same type of resin as the organic thin film.
Ｏ＿３で表わされ、 （ａ）０．７≦ｘ≦１、０．９≦ｘ＋ｙ＜１、０．９５
≦ｚ≦１、ｗ＝０ （ｂ）ｘ＝１、ｙ＝０、０．４５≦ｚ＜１、ｚ＋ｗ＝１ （ｃ）０．８３≦ｘ≦１、ｘ＋ｙ＝１、０．５≦ｚ＜１
、０．９６≦ｚ＋ｗ≦１ のいずれかの組成を有する焦電薄膜材料によって構成さ
れる請求項１記載の焦電型赤外線検出器。(6) The pyroelectric element is Pb_xLa_yTi_zZr_w
Represented by O_3, (a) 0.7≦x≦1, 0.9≦x+y<1, 0.95
≦z≦1, w=0 (b) x=1, y=0, 0.45≦z<1, z+w=1 (c) 0.83≦x≦1, x+y=1, 0.5≦z <1
2. The pyroelectric infrared detector according to claim 1, which is made of a pyroelectric thin film material having a composition of 0.96≦z+w≦1.
方向に配向している請求項１記載の焦電型赤外線検出器
。(7) The pyroelectric infrared detector according to claim 1, wherein the crystal axis of the pyroelectric thin film constituting the pyroelectric element is oriented in the direction of the polarization axis.
膜を配向させることのできないセラミクス、ガラス、樹
脂、あるいはその複合材料を前記基板に用いた請求項７
記載の焦電型赤外線検出器。(8) The substrate is made of ceramics, glass, resin, or a composite material thereof, in which the pyroelectric thin film cannot be oriented even if the pyroelectric thin film is directly formed on the substrate.
The described pyroelectric infrared detector.
板全体を覆うように有機薄膜を作製し、この上に第２基
板を接着した後、第１の基板を裏面からエッチング除去
しうる焦電型赤外線検出器の製造方法。(9) Fabricate a pyroelectric element of a desired size on the first substrate, fabricate an organic thin film to cover the entire substrate, adhere the second substrate on top of this, and then etch the first substrate from the back side. A method for manufacturing a removable pyroelectric infrared detector.
配向を可能とする材料からなる請求項９記載の焦電型赤
外線検出器の製造方法。(10) The method for manufacturing a pyroelectric infrared detector according to claim 9, wherein the first substrate is made of a material that enables crystal orientation in the direction of the polarization axis of the pyroelectric thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2298002A JP2584124B2 (en) | 1990-11-01 | 1990-11-01 | Pyroelectric infrared detector and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2298002A JP2584124B2 (en) | 1990-11-01 | 1990-11-01 | Pyroelectric infrared detector and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04170077A true JPH04170077A (en) | 1992-06-17 |
| JP2584124B2 JP2584124B2 (en) | 1997-02-19 |
Family
ID=17853857
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2298002A Expired - Fee Related JP2584124B2 (en) | 1990-11-01 | 1990-11-01 | Pyroelectric infrared detector and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2584124B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5413667A (en) * | 1992-11-04 | 1995-05-09 | Matsushita Electric Industrial Co., Ltd. | Pyroelectric infrared detector fabricating method |
| EP0667532A2 (en) * | 1994-02-07 | 1995-08-16 | Matsushita Electric Industrial Co., Ltd. | Thin film sensor element and method of manufacturing the same |
| EP1089360A1 (en) * | 1999-04-06 | 2001-04-04 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric thin film device, inkjet recording head using the device and manufacturing methods of the device and the head |
| JP2003520447A (en) * | 2000-01-17 | 2003-07-02 | エドヴァード・ケルヴェステン | How to connect components |
| US6931700B2 (en) | 2001-10-02 | 2005-08-23 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing thin film piezoelectric elements |
| WO2010090188A1 (en) * | 2009-02-04 | 2010-08-12 | セイコーインスツル株式会社 | Radiation sensor and method for manufacturing same |
| JP2010249676A (en) * | 2009-04-16 | 2010-11-04 | Hioki Ee Corp | Method for producing pyroelectric infrared image sensor and pyroelectric infrared image sensor |
| JP2011071467A (en) * | 2009-08-28 | 2011-04-07 | Panasonic Electric Works Co Ltd | Method of manufacturing ferroelectric device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57104380A (en) * | 1980-12-19 | 1982-06-29 | New Japan Radio Co Ltd | Infrared ray solid-state image pickup device |
| JPS63313023A (en) * | 1987-06-16 | 1988-12-21 | Matsushita Electric Ind Co Ltd | Pyroelectric type infrared array sensor and its production |
-
1990
- 1990-11-01 JP JP2298002A patent/JP2584124B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57104380A (en) * | 1980-12-19 | 1982-06-29 | New Japan Radio Co Ltd | Infrared ray solid-state image pickup device |
| JPS63313023A (en) * | 1987-06-16 | 1988-12-21 | Matsushita Electric Ind Co Ltd | Pyroelectric type infrared array sensor and its production |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5483067A (en) * | 1992-11-04 | 1996-01-09 | Matsuhita Electric Industrial Co., Ltd. | Pyroelectric infrared detector and method of fabricating the same |
| EP0764990A1 (en) | 1992-11-04 | 1997-03-26 | Matsushita Electric Industrial Co., Ltd. | Pyroelectric infrared detector and method of fabricating the same |
| US5413667A (en) * | 1992-11-04 | 1995-05-09 | Matsushita Electric Industrial Co., Ltd. | Pyroelectric infrared detector fabricating method |
| EP0667532A2 (en) * | 1994-02-07 | 1995-08-16 | Matsushita Electric Industrial Co., Ltd. | Thin film sensor element and method of manufacturing the same |
| EP0667532B1 (en) * | 1994-02-07 | 2003-11-26 | Matsushita Electric Industrial Co., Ltd. | Thin film sensor element and method of manufacturing the same |
| US6688731B1 (en) | 1999-04-06 | 2004-02-10 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric thin film element, ink jet recording head using such a piezoelectric thin film element, and their manufacture methods |
| EP1089360A1 (en) * | 1999-04-06 | 2001-04-04 | Matsushita Electric Industrial Co., Ltd. | Piezoelectric thin film device, inkjet recording head using the device and manufacturing methods of the device and the head |
| EP1089360A4 (en) * | 1999-04-06 | 2002-05-29 | Matsushita Electric Ind Co Ltd | Piezoelectric thin film device, inkjet recording head using the device and manufacturing methods of the device and the head |
| JP2003520447A (en) * | 2000-01-17 | 2003-07-02 | エドヴァード・ケルヴェステン | How to connect components |
| US6931700B2 (en) | 2001-10-02 | 2005-08-23 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing thin film piezoelectric elements |
| WO2010090188A1 (en) * | 2009-02-04 | 2010-08-12 | セイコーインスツル株式会社 | Radiation sensor and method for manufacturing same |
| JP2010249676A (en) * | 2009-04-16 | 2010-11-04 | Hioki Ee Corp | Method for producing pyroelectric infrared image sensor and pyroelectric infrared image sensor |
| JP2011071467A (en) * | 2009-08-28 | 2011-04-07 | Panasonic Electric Works Co Ltd | Method of manufacturing ferroelectric device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2584124B2 (en) | 1997-02-19 |
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