JPH04169205A - Cutting method by multiwire saw - Google Patents

Cutting method by multiwire saw

Info

Publication number
JPH04169205A
JPH04169205A JP29669990A JP29669990A JPH04169205A JP H04169205 A JPH04169205 A JP H04169205A JP 29669990 A JP29669990 A JP 29669990A JP 29669990 A JP29669990 A JP 29669990A JP H04169205 A JPH04169205 A JP H04169205A
Authority
JP
Japan
Prior art keywords
dummy plate
tertiary
cut
wire
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29669990A
Other languages
Japanese (ja)
Other versions
JPH0790547B2 (en
Inventor
Masayasu Kojima
正康 小嶋
Goro Yamada
吾郎 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP2296699A priority Critical patent/JPH0790547B2/en
Publication of JPH04169205A publication Critical patent/JPH04169205A/en
Publication of JPH0790547B2 publication Critical patent/JPH0790547B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades

Abstract

PURPOSE:To recover wafers after cutting in an extremely efficient manner by attracting and fixing a work by magnetic force in addition to an adhesive. CONSTITUTION:A primary dummy plate 8 made of a fragile material is bonded to the under surface of a work 6 and a secondary dummy plate 18 made of a magnetic material is bonded to the under surface of the dummy plate 8 and a tertiary dummy plate 28 made of a magnet is interposed between the dummy plate 18 and the steel base on a work push-up stand 10. In this state, the work 6 is attracted and fixed by magnetic force to be cut and, at the point of time when the dummy plate 28 is cut by wires 4, cutting is stopped. Subsequently, wafers 6-1 having the cut pieces of the dummy plates 8, 18 bonded thereto are separated from the dummy plate 28. By this method, the wafers 6-1 after the cutting of the work 6 can be efficiently taken out and the mounting of the work 6 can be also simply and rapidly carried out and the rate of operation of a multiwire saw can be markedly enhanced and there is no anxiety generating a saw mark at all when the wafers are taken out.

Description

【発明の詳細な説明】 産業上の利用分野 この発明は、半導体材料、磁性材料、セラミックス等の
脆性材料をワイヤにより薄厚の多数のウェハに切断する
マルチワイヤソーに係り、被切断物(以下ワークと称す
る)の切断終了後にウェハを簡易迅速に能率よく取出せ
るようにするための切断方法に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a multi-wire saw for cutting brittle materials such as semiconductor materials, magnetic materials, and ceramics into a large number of thin wafers using wires. This invention relates to a cutting method that allows a wafer to be taken out simply, quickly, and efficiently after cutting is completed.

従来の技術 例えば半導体電子材料のシリコンインゴットをウェハ状
に切断するのに用いられるマルチワイヤソーは、所定ピ
ッチで多条掛けされたワイヤ列にワークを押付け、砥粒
を含む研削液(以下砥液と称する)を注ぎつつ、ワイヤ
とワークを相対運動せしめ、研削作用によって切断する
装置である。
Conventional technology For example, a multi-wire saw used to cut silicon ingots of semiconductor electronic materials into wafer shapes presses a workpiece against a row of wires strung at a predetermined pitch and uses a grinding fluid containing abrasive grains (hereinafter referred to as abrasive fluid). This is a device that allows the wire and workpiece to move relative to each other while pouring the workpiece, and cuts the wire and workpiece using a grinding action.

第6図は一般的なマルチワイヤソーの切断部を例示した
もので、回転自在に保持された3個の溝ローラ(IX2
X3)の外周面に刻設された多数の溝に1本のワイヤ(
4)が巻付けられて所定ピッチのワイヤ列(5)が形成
され、このワイヤ列を走行させるとともに砥液を注ぎな
がらワーク押上台を押上げ徐々に切断していく方式であ
る。
Figure 6 shows an example of the cutting section of a general multi-wire saw, in which three groove rollers (IX2
A single wire (
4) is wound to form a wire row (5) at a predetermined pitch, and this wire row is run while pouring abrasive liquid while pushing up a workpiece lifting table to gradually cut the workpiece.

この方式におけるワーク(6ンは、脆性材料製のダミー
板(8)を介して接着剤により鋼製のベース(9)に取
付けられている。すなわち、ワーク(6)の底面に接着
剤にてダミー板(8)を接着し、このダミー板を接着剤
にてベース(9)に接着するもので、ベース(9)はワ
ーク押上台(10)に締付はネジ(11)にて着脱自在
に取付けられる。
In this method, the workpiece (6) is attached to a steel base (9) with adhesive via a dummy plate (8) made of brittle material.In other words, the workpiece (6) is attached to the bottom surface of the workpiece (6) with adhesive. A dummy plate (8) is glued, and this dummy plate is glued to the base (9) with adhesive.The base (9) can be attached to and detached from the workpiece lifting table (10) using screws (11). mounted on.

ワークの固定手段に接着剤を用いる方式は、当然のこと
ながら、ワイヤ列(5)の走行に伴う研削力に接着剤が
耐える必要があり、通常はエポキシ系の接着剤、ワック
ス等が使用される。
In the method of using adhesive to fix the workpiece, the adhesive must of course withstand the grinding force caused by the running of the wire row (5), and epoxy adhesives, wax, etc. are usually used. Ru.

第7図(AXB)は上記ワイヤソーにおける切断部を拡
大して示すもので、ワーク(6)の押上は、ワイヤ列(
5)がダミー板に切込むまで続けられ、ワーク(6)ハ
多数のウェハ(6−1)に切断される。またこの時、ワ
イヤ列(5)は第7図(B)に示すように、ダミー板(
8)の途中に位置しており、切断されたウェハとウェハ
との間には砥粒(12)が充満した状態となっている。
FIG. 7 (AXB) shows an enlarged view of the cutting section of the wire saw, and the push-up of the workpiece (6) is performed by the wire row (
5) is continued until the dummy plate is cut, and the workpiece (6) is cut into a large number of wafers (6-1). Also, at this time, the wire row (5) is connected to the dummy plate (
8), and the space between the cut wafers is filled with abrasive grains (12).

切断されたウェハをワイヤソーより取出す方法としては
、従来、以下に示す方法がある。
Conventionally, there are the following methods for taking out a cut wafer from a wire saw.

第1の方法は、第7図(A)に示すワイヤ列をワーク(
6)の両側で切断し、締付はネジ(11)を緩め、ベー
ス(9)を押上台(10)から取外し、ワーク(6)内
に残ったワイヤ(4)を−本づつ抜きとる方法である。
The first method is to move the wire row shown in FIG. 7(A) to the workpiece (
6), loosen the screws (11), remove the base (9) from the push-up table (10), and pull out the wires (4) remaining in the workpiece (6) one by one. It is.

第2の方法は、押上台(1o)を停止したままで、ワイ
ヤ(4斤走行させてワーク(6)からワイヤ(4)を抜
き取りベース(9)ごと押上台(1o)から取外す方法
である。
The second method is to keep the push-up table (1o) stopped, run the wire (4 loaves), pull out the wire (4) from the workpiece (6), and remove the base (9) from the push-up table (1o). .

第3の方法は、第7図(A)の状態からワイヤ列(5)
を低速で走行させながら押上台(10)を降下させ、ワ
イヤ列(5)をワーク(6)の上方に抜き取ったのち、
ベース(9)ごと押上台(10)から取外す方法である
The third method is to move the wire row (5) from the state shown in FIG. 7(A).
After lowering the push-up table (10) while running at a low speed and pulling out the wire row (5) above the workpiece (6),
This method is to remove the entire base (9) from the push-up table (10).

第4の方法は、特開昭61−12576号公報に示され
るように、ワイヤ列(5)をダミー板(8)内に残した
まま、ウェハ間に詰まった砥粒(12)を洗浄除去し、
ウェハ(6−1)を端から順に1枚ずつ吸着パッドで折
り取っていく方法である。
A fourth method is to wash and remove abrasive grains (12) stuck between wafers while leaving the wire array (5) in the dummy plate (8), as shown in Japanese Patent Application Laid-Open No. 12576/1983. death,
This is a method in which the wafers (6-1) are broken off one by one from the edge using a suction pad.

第5の方法は、特開昭61−182761号公報に示さ
れるように、第7図(A)の状態でワーク(6)の両サ
イド側面を全長にわたって把持し、締付はネジ(11)
を緩め、ワイヤ列(5)を走行させながら、別設の駆動
装置(図示せず)によりベース(9)を徐々にスライド
させ、ダミー板(8)をワイヤ列(5)で横切り分断し
、全ウェハを一括して取出す方法である。
The fifth method, as shown in Japanese Unexamined Patent Publication No. 61-182761, is to grasp both side surfaces of the workpiece (6) along its entire length in the state shown in FIG. 7(A), and tighten the screws (11).
is loosened, and while the wire row (5) is running, the base (9) is gradually slid by a separate drive device (not shown), and the dummy plate (8) is cut across by the wire row (5). This is a method of taking out all wafers at once.

発明が解決しようとする課題 しかし、前記第1〜第5の方法には、以下に記載する問
題点があった。
Problems to be Solved by the Invention However, the first to fifth methods have the following problems.

第1の方法は、1回の切断でワイヤを廃却する場合には
簡便であるが、ワイヤの損傷が小さくて再使用できる場
合には大きな損失となる。また、ワイヤを再びワイヤソ
ーにセツティングする場合に工数がかがるのも問題であ
る。
The first method is convenient when the wire is disposed of after being cut once, but results in a large loss when the wire is only slightly damaged and can be reused. Another problem is that it takes a lot of man-hours to set the wire on the wire saw again.

第2の方法は、ワイヤを再使用できるが、切断完了時点
でのワイヤの残り量が多い場合には巻取りに時間ががか
る欠点がある。また、第1の方法と同様、ワイヤを再び
ワイヤソーにセツティングするのに工数がかかる欠点が
ある。
The second method allows the wire to be reused, but has the disadvantage that winding takes time if there is a large amount of wire remaining at the time the cutting is completed. Also, like the first method, there is a drawback that it takes a lot of man-hours to set the wire on the wire saw again.

第3の方法は、ワイヤ列がそのままワイヤソー内に残る
ので、引続いて別のワークの切断を行うことができ、ワ
イヤソーを効率的に稼働させることができるという利点
があるが、ワークを降下させる過程でウェハの表面にソ
ーマークが入るおそれがある。
The third method has the advantage that the wire row remains in the wire saw, so another workpiece can be cut subsequently, and the wire saw can be operated efficiently, but the workpiece is lowered. During the process, saw marks may be created on the wafer surface.

すなわち、ウェハの切断面が十分に平坦で、かつ鉛直で
あれば問題ないが、これらの条件が満たされない場合に
はワイヤ列が切断面をこすりながらワークが降下するこ
とになり、ソーマークが発生するのである。ソーマーク
の程度によっては、ウェハを廃却せざるを得ないことも
あり得る。
In other words, there is no problem if the cut surface of the wafer is sufficiently flat and vertical, but if these conditions are not met, the wire row will rub against the cut surface and the workpiece will descend, resulting in saw marks. It is. Depending on the severity of the saw mark, the wafer may have to be discarded.

第4の方法は、ソーマークの懸念はないものの、ワーク
が脆い場合にはダミー板の位置で折れずに、ウェハ自体
が折れる可能性がある。また、ウェハの枚数が多い場合
にはウェハの取出しに時間がかかるという欠点もある。
In the fourth method, although there is no concern about saw marks, if the workpiece is fragile, there is a possibility that the wafer itself may be broken without being broken at the position of the dummy plate. Another drawback is that when there are a large number of wafers, it takes time to take out the wafers.

なお、前記第1〜第3の方法でも、ワイヤソーがら取外
しなウェハ群からワークを1枚ずつ折り取っていく工程
が必要であり、第4の方法と同様、ウェハの折損や工数
の問題があることはいうまでもない。
Note that the first to third methods also require a step of breaking off the work pieces one by one from a group of wafers that must be removed from the wire saw, and like the fourth method, there are problems with wafer breakage and man-hours. Needless to say.

第5の方法は、全ウェハを一括して取出すので効率的で
はあるが、装置が複雑で製作費がかさむという問題があ
る。
The fifth method is efficient because all the wafers are taken out at once, but there are problems in that the device is complicated and the manufacturing cost is high.

この発明は、ワイヤソーにおける切断後のウェハ取出し
にかかわる前記の問題点を解決するためになされたもの
であり、比較的簡易な手段で切断後のウェハを極めて能
率的に回収でき、マルチワイヤソーの稼働率を向上でき
る切断方法を提案しようとするものである。
This invention was made in order to solve the above-mentioned problems related to taking out wafers after cutting with a wire saw, and it is possible to very efficiently collect wafers after cutting with a relatively simple means, and to improve the operation of a multi-wire saw. This paper attempts to propose a cutting method that can improve the cutting rate.

課題を解決するための手段 この発明に係る切断方法は、ワークのセツティング方法
として、従来の接着剤のみによる方法に替えて、接着剤
に加えて磁力により吸着固定する手段を採用したもので
ある。
Means for Solving the Problems The cutting method according to the present invention adopts a method of attracting and fixing the workpiece using magnetic force in addition to adhesive instead of the conventional method using only adhesive. .

すなわち、この発明の要旨は、ワークの下面に脆性材料
製の一次ダミー板を接着し、当該一次ダミー板の下面に
磁性材料製の二次ダミー板を接着し、当該二次ダミー板
とワーク押上台上の鋼製ベースとの間に磁石製の三次ダ
ミー板を介在させて磁力で吸着固定した状態で切断を行
い、ワイヤが三次ダミー板に切込んだ時点で切断を停止
し、一次ダミー板の切断片と二次ダミー板の切断片が接
着したウェハを三次ダミー板から分離する方法である。
That is, the gist of this invention is to bond a primary dummy plate made of a brittle material to the lower surface of a workpiece, bond a secondary dummy plate made of a magnetic material to the lower surface of the primary dummy plate, and connect the secondary dummy plate and the workpiece to Cutting is performed with a tertiary dummy plate made of magnet interposed between the steel base on the table and fixed by magnetic force. Cutting is stopped when the wire cuts into the tertiary dummy plate, and the wire is cut into the tertiary dummy plate. In this method, the wafer to which the cut pieces of the secondary dummy plate and the cut pieces of the secondary dummy plate are bonded is separated from the tertiary dummy plate.

また、この発明は、上記切断方法において、一次ダミー
板を省略し、ワークの下面に磁性材料製の二次ダミー板
を接着することを特徴とし、また、三次ダミー板を二次
ダミー板と同様磁性材料製とし、該三次ダミー板を二次
ダミー板と共に磁石製のベースに吸着固定することを特
徴とするものである。
Further, the present invention is characterized in that in the above cutting method, the primary dummy plate is omitted and a secondary dummy plate made of a magnetic material is bonded to the lower surface of the workpiece, and the tertiary dummy plate is used in the same manner as the secondary dummy plate. It is made of a magnetic material, and is characterized in that the tertiary dummy plate and the secondary dummy plate are attracted and fixed to a base made of a magnet.

作   用 この発明において、一次ダミー板は従来と同様セラミッ
クス、ガラス等の脆性材料製であるが、二次ダミー板は
磁石製の三次ダミー板を介してワーク押上台上の鋼製ベ
ースに磁力で吸着固定する関係上、鋼板等の軟磁性材料
で製作する。
Operation In this invention, the primary dummy plate is made of brittle materials such as ceramics and glass as in the past, but the secondary dummy plate is magnetically attached to the steel base on the workpiece lifting table via the tertiary dummy plate made of magnets. Because it is fixed by suction, it is made of soft magnetic material such as steel plate.

このいわゆる三層構造のダミー板を介してワークを固定
する方式の場合、二次ダミー板もワイヤで切断するので
、切断時間を短かくするためにその厚さは薄い方が望ま
しい。通常は0.5mm前後の厚さが適当である。
In the case of this method of fixing a workpiece through a dummy plate having a so-called three-layer structure, the secondary dummy plate is also cut with a wire, so it is desirable that the thickness of the secondary dummy plate be thin in order to shorten the cutting time. Usually, a thickness of around 0.5 mm is appropriate.

三次ダミー板の磁気吸着力は、切断加工中にワークに作
用するワイヤ走行方向の力によってワークがずれないよ
うな強さを有することはいうまでもない。
Needless to say, the magnetic adsorption force of the tertiary dummy plate is strong enough to prevent the workpiece from being displaced by the force in the wire running direction that acts on the workpiece during cutting.

ワイヤが三次ダミー板まで切込んだ場合、完全に切断さ
れた二次ダミー板は磁力で三次ダミー板に吸着されてお
り、またウェハ間には砥粒が充満しているので、ウェハ
が倒れることはない。
If the wire cuts all the way to the tertiary dummy plate, the completely cut secondary dummy plate is attracted to the tertiary dummy plate by magnetic force, and the space between the wafers is filled with abrasive grains, so the wafers may fall over. There isn't.

ウェハの取出しは、該ウェハを切断方向と直角方向にス
ライドさせるだけで一次ダミー板と二次ダミー板が付着
した状態で容易に三次ダミー板がら分離することができ
る。したがって、ウェハの取出しは1枚ずつに限らず、
数十枚単位でまとめて取出すことも可能である。
To take out the wafer, the wafer can be easily separated from the tertiary dummy plate with the primary dummy plate and the secondary dummy plate attached by simply sliding the wafer in a direction perpendicular to the cutting direction. Therefore, the removal of wafers is not limited to one wafer at a time;
It is also possible to take out several dozen sheets at once.

マfs、一次ダミー板を省略し、二次ダミー板を直接ワ
ークに接着した場合は、切断後のウェハは二次ダミー板
の切断片が付着した状態で三次ダミー板から分離する。
If the primary dummy plate is omitted and the secondary dummy plate is bonded directly to the workpiece, the wafer after cutting is separated from the tertiary dummy plate with the cut pieces of the secondary dummy plate attached.

また、三次ダミー板を二次ダミー板と同様磁性材料とし
て磁石製のベースに吸着固定する方式の場合は、二次ダ
ミー板と三次ダミー板は磁石製のベースの磁力により二
枚同時に吸着される。したがって、切断後のウェハは一
次ダミー板および二次ダミー板の切断片が付着した状態
で三次ダミー板から分離する。
In addition, in the case of a method in which the tertiary dummy board is made of magnetic material and fixed to a magnetic base like the secondary dummy board, the secondary dummy board and the tertiary dummy board are both attracted at the same time by the magnetic force of the magnetic base. . Therefore, the wafer after cutting is separated from the tertiary dummy plate with the cut pieces of the primary dummy plate and the secondary dummy plate attached.

この場合のベースの吸着力は、切断加工中にワークに作
用するワイヤ走行方向の力によってワークがずれないよ
うな強さを有することはいうまでもない。
Needless to say, the suction force of the base in this case is strong enough to prevent the workpiece from being displaced by the force in the wire running direction that acts on the workpiece during cutting.

上記いずれの方式においても、三次ダミー板の切込み溝
にはワイヤ列がそのまま嵌入するので、それぞれ同じ三
次ダミー板でワークの切断を繰返すことができ、ワイヤ
ソーへのワークの装着とウェハの取出しは極めて能率的
に行うことができる。
In any of the above methods, the wire rows are inserted into the cut grooves of the tertiary dummy plate as they are, so it is possible to repeatedly cut the workpiece with the same tertiary dummy plate, making it extremely easy to load the workpiece onto the wire saw and take out the wafer. It can be done efficiently.

実  施  例 実施例1 第1図〜第3図はこの発明の請求項1に対応する実施例
を示すもので、第1図(A)はダミー材付きワークをワ
イヤソーにセットした状態を示す正面図、第1図(B)
は同上側面図、第2図(A)はワイヤが三次ダミー板ま
で切込んだ状態を示す正面図、第2図(B)は同上側面
図、第3図はワイヤソーよりウェハを除去した後、ワイ
ヤ列をワーク押上台より離脱させた状態を示す図で、(
A)は正面図、(B)は側面図である。
Embodiment Example 1 Figures 1 to 3 show an embodiment corresponding to claim 1 of the present invention, and Figure 1 (A) is a front view showing a state in which a workpiece with a dummy material is set on a wire saw. Figure, Figure 1 (B)
is a side view of the same as above, FIG. 2(A) is a front view showing the state in which the wire has been cut to the tertiary dummy plate, FIG. 2(B) is a side view of the same as above, and FIG. 3 is after removing the wafer with a wire saw. This is a diagram showing the state in which the wire row is removed from the workpiece lifting platform.
A) is a front view, and (B) is a side view.

すなわち、第1図、第2図はワーク(6)の下面に脆性
材料製のダミー板(8)を接着し、この一次ダミー板の
下面に磁性材料製の二次ダミー板(18)を接着し、こ
の二次ダミー板と鋼製ベース(9)との間に磁石製三次
ダミー板(28)を介在させてワーク押上台(lO)上
に固定する。
That is, in FIGS. 1 and 2, a dummy plate (8) made of a brittle material is glued to the lower surface of a workpiece (6), and a secondary dummy plate (18) made of a magnetic material is glued to the lower surface of this primary dummy plate. A tertiary dummy plate (28) made of a magnet is interposed between this secondary dummy plate and the steel base (9), and fixed on the workpiece lifting table (10).

ここで、一次ダミー板(8)は従来法と同様にセラミッ
クス、ガラスなどの脆性材料で製作する。
Here, the primary dummy plate (8) is made of a brittle material such as ceramics or glass as in the conventional method.

二次ダミー板(18)は、ワイヤソーのワーク押上台(
10)に磁力で固定するので、鋼板等の軟磁性材料で製
作する。また、この二次ダミー板(18)もワイヤで切
断するので、切断時間を短くするために、その厚さは薄
い方がよい。ただし、一次ダミー板(8)へ接着した後
の二次ダミー板(18)の面が平坦でない場合には磁力
で拘束する力が弱くなるので、二次ダミー板(18)の
厚さを極端に薄くすることはできない。鋼板を使用する
場合は、0.5mm前後が適当である。
The secondary dummy plate (18) is a wire saw workpiece lifting table (
10) Since it is fixed by magnetic force, it is manufactured from a soft magnetic material such as a steel plate. Further, since this secondary dummy plate (18) is also cut with a wire, it is better to have a thinner thickness in order to shorten the cutting time. However, if the surface of the secondary dummy plate (18) after adhering to the primary dummy plate (8) is not flat, the magnetic restraining force will be weakened, so the thickness of the secondary dummy plate (18) should be kept to an extreme. It cannot be made thinner. When using a steel plate, a thickness of around 0.5 mm is appropriate.

三次ダミー板(28)は硬磁性材料で製作する。この三
次ダミー板(16)の磁気吸着力は、前記した通り切断
加工中にワーク(6)に作用するワイヤ走行方向の力に
よってワーク(6)がずれないような強さを有すること
はいうまでもない。
The tertiary dummy plate (28) is made of hard magnetic material. It goes without saying that the magnetic adsorption force of this tertiary dummy plate (16) is strong enough to prevent the workpiece (6) from shifting due to the force in the wire running direction that acts on the workpiece (6) during cutting as described above. Nor.

一次ダミー板(8)、二次ダミー板(18)の平面寸法
については、長手方向長さは少なくともワーク(6)の
長さと同一にする必要があるが、幅は切断中にワーク(
6)を固定保持する能力さえあれば、ワーク(6)より
狭幅であっても差しつかえない。
Regarding the planar dimensions of the primary dummy plate (8) and the secondary dummy plate (18), the length in the longitudinal direction must be at least the same as the length of the workpiece (6), but the width must be the same as that of the workpiece (6) during cutting.
There is no problem even if the width is narrower than the workpiece (6) as long as it has the ability to securely hold the workpiece (6).

ワーク(6)の切断は従来と同様、所定間隔幅で張られ
たワイヤ列(5)を走行せしめ、砥液を注ぎながらワー
ク押上台(10)を上昇させて切断を行う。
The workpiece (6) is cut in the same way as in the past, by running the wire row (5) stretched at predetermined intervals and raising the workpiece lifting table (10) while pouring abrasive liquid.

゛ 切断中のワーク(6)には、ワイヤ列(5)によっ
てワイヤ走行方向の力が作用するが、三次ダミー板(2
8)の磁気吸着力はもとよりこのワイヤ走行方向の力に
十分耐え得る力を有するので、ワークがずれたり不安定
に動くことはない。
゛ A force in the wire running direction is applied to the workpiece (6) being cut by the wire row (5), but the tertiary dummy plate (2
Since it has a force sufficient to withstand not only the magnetic attraction force (8) but also the force in the wire running direction, the workpiece will not shift or move unstablely.

このようにして切断が進み、第2図に示すごとく、ワイ
ヤ列(5)が三次ダミー板(28)の途中まで切込むと
切断を停止する。
The cutting progresses in this manner and stops when the wire row (5) cuts halfway into the tertiary dummy plate (28), as shown in FIG.

ワーク(6)は両端部を除いて多数のウェハ(6−1)
に、一次ダミー板(8)および二次ダミー板(18)は
それぞれの切断片(8−IX18−1)に切断されてい
る。この状態でも、二次ダミー板切断片(18−1)は
三次ダミー板(28ルこ磁力で吸着されており、しかも
ウェハ(6−1)間には砥粒が充満しているので、ウェ
ハ(6−1)が倒れることはない。
The workpiece (6) has many wafers (6-1) except for both ends.
, the primary dummy plate (8) and the secondary dummy plate (18) are cut into respective cut pieces (8-IX18-1). Even in this state, the secondary dummy plate cut piece (18-1) is attracted by the tertiary dummy plate (28 lbs.) magnetic force, and the space between the wafers (6-1) is filled with abrasive grains, so the wafer (6-1) will not fall.

ウェハを取出す際は、ワイヤ(1)の走行を停止した後
、一次および二次ダミー板切断片(8−1)(18−1
)が接着した状態のウェハを三次ダミー板(28)から
分離させる。
When taking out the wafer, after stopping the running of the wire (1), remove the cut pieces of the primary and secondary dummy plates (8-1) (18-1).
) is separated from the tertiary dummy plate (28).

この作業はウェハ(6−1)を第2図(B)に示す矢印
A方向に移動させれば、容易に行うことができる。
This operation can be easily performed by moving the wafer (6-1) in the direction of arrow A shown in FIG. 2(B).

また、数十枚単位でまとめて分離できるので工数的にも
問題にならない。なお、灯油などの洗滌液であらかじめ
ウェハ(6−1)間に詰った砥粒を除去しておけば、こ
の分離作業はさらに容易になる。最終的には、取出した
ウェハ(6−1)からダミー板切断片(8−IX18−
1)を接着部分から除去すれば製品ウェハが得られる。
Furthermore, since it is possible to separate several dozen sheets at once, there is no problem in terms of man-hours. Incidentally, if the abrasive grains stuck between the wafers (6-1) are removed in advance using a cleaning liquid such as kerosene, this separation work will be made easier. Finally, the dummy plate cut piece (8-IX18-
A product wafer is obtained by removing 1) from the bonded portion.

第3図は全ウェハ(6−1)を三次ダミー板(28)か
ら除去した後、押上台(10)を降下せしめ、ワイヤ列
(5)を三次ダミー板(28)の溝(28−1沖・ら離
脱させた状態を示す。
Figure 3 shows that after all wafers (6-1) have been removed from the tertiary dummy plate (28), the push-up table (10) is lowered and the wire row (5) is moved into the groove (28-1) of the tertiary dummy plate (28). Shows the state in which Oki-ra has been detached.

この状態から再び切断を行う場合は、第1図のワーク(
6)と一次ダミー板(8)および二次ダミー板(18)
の接着部を、ベース(9)上の使用済み三次ダミー板(
28)に吸着させればよい。
When cutting again from this state, the workpiece shown in Figure 1 (
6), primary dummy plate (8) and secondary dummy plate (18)
Connect the adhesive part to the used tertiary dummy board (
28).

切断工程の終期においてワイヤ列(5)は再び三次ダミ
ー板(28)の溝(28−1)におさめられるので、ワ
イヤ列(5)のワイヤ(1)のピッチが同一であれば切
断作業を繰り返して実施することができるとともに、ワ
イヤソーへのワークの装着とウェハの取出しを極めて能
率的に行うことができる。
At the end of the cutting process, the wire row (5) is again placed in the groove (28-1) of the tertiary dummy plate (28), so if the pitch of the wires (1) in the wire row (5) is the same, the cutting operation can be carried out. This process can be carried out repeatedly, and loading the workpiece onto the wire saw and taking out the wafer can be done extremely efficiently.

なお、ここでは初回の切断に平板状の三次ダミー板(1
6)を使用しているが、所定寸法およびピッチの溝(2
8−1)をあらかじめ設けた磁石製の三次ダミー板(2
8)を製作できる場合には、初回の切断からこれを使用
することもできる。
In addition, here, a flat tertiary dummy plate (1
6), but grooves of specified dimensions and pitch (2
8-1) A tertiary dummy plate made of magnet (2)
If 8) can be manufactured, it can be used from the first cutting.

実施例2 第4図はこの発明の請求項2に対応する実施例を示すも
ので、一次ダミー板(8)を省略し、ワーク(6)の下
面に直接二次ダミー板(18)を接着して切断する方法
である。
Embodiment 2 FIG. 4 shows an embodiment corresponding to claim 2 of the present invention, in which the primary dummy plate (8) is omitted and the secondary dummy plate (18) is bonded directly to the lower surface of the workpiece (6). This is the method of cutting.

この場合は、ワイヤ列(5)が三次ダミー板(28)の
途中まで切込まれた後、二次ダミー板切断片(18−1
)が接着した状態のウェハ(6−1>を三次ダミー板(
28)から分離させる。
In this case, after the wire row (5) is cut halfway into the tertiary dummy plate (28), the cut piece of the secondary dummy plate (18-1
) is attached to the wafer (6-1>) on a tertiary dummy plate (
28).

この方法も、前記と同様、ワイヤ列(5)のワイヤピン
チが同一であれば同じ三次ダミー板を用いて切断作業を
繰返して実施することができる。また、初回の切断で形
成される溝を事前に三次ダミー板(28)に形成してお
くことも可能である。
This method can also be carried out by repeating the cutting operation using the same tertiary dummy plate, as long as the wire pinch of the wire row (5) is the same, as described above. It is also possible to form the grooves formed in the first cutting on the tertiary dummy plate (28) in advance.

実施例3 第5図はこの発明の請求項3に対応する実施例を示すも
ので、平面研削盤などの工作機械のマグネットチャック
の機能をベース(9)にもたせて切断する方法である。
Embodiment 3 FIG. 5 shows an embodiment corresponding to claim 3 of the present invention, which is a cutting method in which the base (9) has the function of a magnetic chuck of a machine tool such as a surface grinder.

すなわち、この方法はベース(9)を磁石製とし、三次
ダミー板(28)を二次ダミー板(18)と同様磁性材
料製とし、この三次ダミー板(38)を二次ダミー板(
18)共に磁石製ベース(19)に吸着固定する方法で
ある。
That is, in this method, the base (9) is made of a magnet, the tertiary dummy plate (28) is made of a magnetic material like the secondary dummy plate (18), and the tertiary dummy plate (38) is made of a secondary dummy plate (
18) This is a method of adsorbing and fixing both to a magnetic base (19).

この方法の場合は、ワーク(6)に接着した二次ダミー
板(8)に磁性材料製の二次ダミー板(18)を接着し
、この二次ダミー板(18)と磁石製ベース(19)の
間に磁性材料製三次ダミー板(38)を介在させ、磁石
製ベース(19)の磁力により三次ダミー板(38)お
よび二次ダミー板(18)を吸着する方法である。
In the case of this method, a secondary dummy plate (18) made of magnetic material is bonded to a secondary dummy plate (8) bonded to the workpiece (6), and this secondary dummy plate (18) and a magnetic base (19) are bonded. In this method, a tertiary dummy plate (38) made of a magnetic material is interposed between the two dummy plates (38), and the tertiary dummy plate (38) and the secondary dummy plate (18) are attracted by the magnetic force of the magnet base (19).

したがって、この方法で切断されたウェハは、前記実施
例1の場合と同様、一次ダミー板切断片(8−1)およ
び二次ダミー板切断片(18−1)が接着した状態で三
次ダミー板(38)から分離する。
Therefore, as in the case of Example 1, the wafer cut by this method is attached to the tertiary dummy plate with the primary dummy plate cut piece (8-1) and the secondary dummy plate cut piece (18-1) adhered to each other. Separate from (38).

この方法も、前記と同様、ワイヤ列のワイヤピッチが同
一であれば同じ三次ダミー板を用いて切断作業を繰返し
行うことができる上、初回の切断で形成される溝を事前
に三次ダミー板に形成しておくことも可能であることは
いうまでもない。
Similar to the above method, if the wire pitch of the wire rows is the same, the cutting operation can be repeated using the same tertiary dummy plate, and the grooves formed in the first cutting can be cut into the tertiary dummy plate in advance. It goes without saying that it is also possible to form the same.

なお、上記実施例1〜3では角形断面のワークを示して
いるが、角形断面に限らず、他の任意の断面形状のもの
にも適用できることはいうまでもない。
In addition, although the above-mentioned Examples 1 to 3 show workpieces having a rectangular cross-section, it goes without saying that the present invention is not limited to a rectangular cross-section and can be applied to any other cross-sectional shape.

例えば、円形断面のワークの場合は、片面にワークの外
周曲率と同等の曲面を有する一次ダミー板あるいは二次
ダミー板をワークに接着すればよい。
For example, in the case of a workpiece with a circular cross section, a primary dummy plate or a secondary dummy plate having one side of a curved surface equivalent to the outer circumferential curvature of the workpiece may be bonded to the workpiece.

実施例4 100mm角、長さ210mmの石英インゴット(ワー
ク)の下面に幅100mm、長さ210mm、厚さ10
mmのガラス製一次ダミー板(8)を接着し、さらにそ
の下面に幅100mm、長さ210mm、厚さ0.6m
mの軟鋼製の二次ダミー板を接着し、マルチワイヤソー
の押上台に装着した鋼製ベースの上に吸着固定したフェ
ライト磁石製の三次ダミー板に前記二次ダミー板を吸着
固定し、直径0.2mmのワイヤをピッチ2mmで張設
したワイヤ列を走行させながらグリーンカーボランダム
の#600砥粒な含有する砥液を供給し、押上台を上昇
させてワーク、一次ダミー板および二次ダミー板を切断
し、さらに三次ダミー板に約3mm切込んだ時点でワイ
ヤの走行および押上台の上昇を停止した。
Example 4 Width 100 mm, length 210 mm, thickness 10 on the bottom surface of a 100 mm square, 210 mm long quartz ingot (work)
A primary glass dummy plate (8) with a diameter of 100 mm in width, 210 mm in length, and 0.6 m in thickness is glued on the bottom surface of the primary glass dummy plate (8).
A secondary dummy plate made of mild steel with a diameter of 0 m was glued, and the secondary dummy plate was suctioned and fixed to a tertiary dummy plate made of ferrite magnet, which was suctioned and fixed on a steel base attached to a push-up stand of a multi-wire saw. .While running a wire row made of 2mm wires stretched at a pitch of 2mm, an abrasive solution containing green carborundum #600 abrasive grains is supplied, and the push-up table is raised to remove the workpiece, primary dummy plate, and secondary dummy plate. was cut, and when the wire was cut into the tertiary dummy plate by about 3 mm, the wire was stopped running and the lifting table was stopped.

しかる後、灯油でウェハ間の砥粒を除去し、厚?1.7
mmのウェハを一次および二次ダミー板切断が付着した
状態で三次ダミー板から分離し、一次および二次ダミー
板切断片を取除いて製品ウェハ100枚を得た。
After that, remove the abrasive grains between the wafers with kerosene and remove the thickness. 1.7
A wafer of mm in diameter was separated from the tertiary dummy plate with the primary and secondary dummy plate cuts attached, and the primary and secondary dummy plate cut pieces were removed to obtain 100 product wafers.

その際、切断終了時点から全ウェハをワイヤソー外に取
出すのに要した時間は8分であった。
At that time, it took 8 minutes to take out all the wafers from the wire saw after cutting was completed.

一方、比較のため一次ダミー材をベースに接着する第7
図に示す従来の方法で同一のワークを切断した結果、全
ウェハを取出すのに約2時間要した。さらに、押上台を
降下させる過程でウェハの切断面にワイヤによるソーマ
ークが発生するものがあり、ソーマークが著しいものは
廃却せざるを得なかった。
On the other hand, for comparison, the seventh dummy material was glued to the base.
As a result of cutting the same workpiece using the conventional method shown in the figure, it took about 2 hours to remove all the wafers. Furthermore, in the process of lowering the push-up table, saw marks are generated by the wire on the cut surface of some wafers, and those with significant saw marks had to be discarded.

したがって、この発明方法によれば、ウェハの取出し工
数が著しく減少するばかりでなく、品質良好なウェハが
得られることも明らかである。
Therefore, it is clear that according to the method of the present invention, not only the number of man-hours for taking out wafers is significantly reduced, but also wafers of good quality can be obtained.

実施例5 実施例4において、ガラス製一次ダミー板を省略し、二
次ダミー板を直接石英インゴットに接着して、以下実施
例4と同様の条件で切断し、厚さ1.7mmのウェハを
二次ダミー板切断片が付着した状態で三次ダミー板から
分離し、製品ウェハ100枚を得た。
Example 5 In Example 4, the primary glass dummy plate was omitted, the secondary dummy plate was directly adhered to the quartz ingot, and the wafers with a thickness of 1.7 mm were cut under the same conditions as in Example 4. The secondary dummy plate was separated from the tertiary dummy plate with the cut pieces attached to it, and 100 product wafers were obtained.

その時の切断終了時点から全ウェハをワイヤソー外に取
出すのに要した時間は8分であった。
It took 8 minutes to take out all the wafers from the wire saw after cutting was completed.

実施例6 i!径125mm、長さ185mmのシリコンインゴッ
トに、幅800mm、長さ185mm、中央部厚さ15
mmのセラミック製の一次ダミー板を接着し、さらにそ
の下面に厚さ0.5mmの軟鋼板製の二次ダミー板を接
着し、マルチワイヤソーの押上台に装着したマグネット
ベースに吸着した幅80mm、長さ185mm、厚さ6
mmの軟鋼板製の三次ダミー板上に前記二次ダミー板を
吸着せしめ、直径0.16mmのワイヤをピッチ0.9
mmで張設したワイヤ列を走行させながらグリーンカー
ボランダムの#1000砥粒を含有する砥液を供給し、
押上台を上昇させてワーク、一次ダミー板および二次ダ
ミー板を切断し、さらに三次ダミー板に約3mm切り込
んだ時点でワイヤの走行および押上台の上昇を停止し、
しかる後、厚さ0.7mmのウェハ200枚を三次ダミ
ー板から分離し、ウェハに付着した一次ダミー板切断片
および二次ダミー板切断片を除去して製品ウェハを得た
Example 6 i! A silicon ingot with a diameter of 125 mm and a length of 185 mm has a width of 800 mm, a length of 185 mm, and a center thickness of 15 mm.
A primary dummy plate made of ceramic with a diameter of 80 mm was glued, and a secondary dummy plate made of a mild steel plate with a thickness of 0.5 mm was glued to the underside of the dummy plate, and the width was 80 mm, which was attracted to a magnetic base attached to the push-up stand of a multi-wire saw. Length 185mm, thickness 6
The secondary dummy plate was adsorbed onto a tertiary dummy plate made of a mild steel plate with a diameter of 0.16 mm and a pitch of 0.9 mm.
Supplying an abrasive solution containing green carborundum #1000 abrasive grains while running a wire row stretched at
The push-up table is raised to cut the workpiece, the primary dummy plate, and the secondary dummy plate, and when about 3 mm has been cut into the tertiary dummy plate, the running of the wire and the lifting of the push-up table are stopped.
Thereafter, 200 wafers with a thickness of 0.7 mm were separated from the tertiary dummy plate, and the cut pieces of the primary dummy plate and the cut pieces of the secondary dummy plate attached to the wafers were removed to obtain product wafers.

その際、切断終了時点から全ウェハをワイヤソー外へ取
出すのに要した時間は9分であった。
At that time, it took 9 minutes to take out all the wafers from the wire saw after cutting was completed.

一方、同一のシリコンインゴットを従来の方法で切断し
た場合は、全ウェハの取出しに約70分を要した。
On the other hand, when the same silicon ingot was cut using the conventional method, it took about 70 minutes to take out all the wafers.

発明の詳細 な説明したごとく、この発明方法によれば、マルチワイ
ヤソーでのワーク切断後のウェハを能率的に取出すこと
ができる上、ワークの取付けも簡易迅速に行うことがで
きるので、マルチワイヤソーの稼働率を著しく向上させ
ることができる   ′上、ウェハの取出しに際してソ
ーマークを発生する心配も全くないため、高品質のウェ
ハを高能率で製造できるという大なる効果を奏するもの
である。
As described in detail, according to the method of the present invention, the wafer after cutting the workpiece with the multi-wire saw can be efficiently taken out, and the workpiece can also be mounted simply and quickly. In addition to being able to significantly improve the operating rate, there is no need to worry about saw marks occurring when taking out wafers, so it has the great effect of allowing high-quality wafers to be manufactured with high efficiency.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図〜第3図はこの発明の請求項1に対応する実施例
を示す図で、第1図(A)はダミー材付きワークをワイ
ヤソーにセットした状態を示す正面図、同図(B)は同
上側面図、第2図(A)はワイヤが三次ダミー板まで切
込んだ状態を示す正面図、同図(B)は同上側面図、第
3図はワイヤソーよりウェハを除去した後、ワイヤ列を
ワーク押上台より離脱させた状態を示す図で、(A)は
正面図、(B)は側面図、第4図はこの発明の請求項2
に対応する実施例で、ダミー材付きワークをワイヤソー
にセットした状態を示す正面図、第5図はこの発明の請
求項3に対応する実施例で、ダミー材付きワークをワイ
ヤソーにセットした状態を示す正面図、第6図は−船釣
なマルチワイヤソーの切断部を例示した斜視図、第7図
は同上ワイヤソーにおけるワークと押上台の部分を拡大
して示す図で(A)はワイヤ列がダミー材まで切込んだ
状態を示す拡大斜視図、(B)はウェハの部分を拡大し
て示す側面図である。 l、2.3・・・溝ローラ    4・・・ワイヤ5・
・・ワイヤ列6−・・ワーク 6−1・・・ウェハ       8・・・一次ダミー
板9・・・ベース       10・・・押上台18
・・・二次ダミー板    19・・・磁石製ベース2
8.38・・・三次ダミー板 出願人  住友金属工業株式会社 代理人  弁理士 押田良久、哀コ□ 第1図 第2図 第3図 第4図 第7図 (A) ソ (B)
1 to 3 are views showing an embodiment corresponding to claim 1 of the present invention, and FIG. 1 (A) is a front view showing a state in which a workpiece with a dummy material is set on a wire saw, and ) is a side view of the same as above, FIG. 2(A) is a front view showing the state in which the wire has been cut to the tertiary dummy plate, FIG. 2(B) is a side view of the same as above, and FIG. FIG. 4 is a diagram showing a state in which the wire row is removed from the workpiece lifting table, where (A) is a front view, (B) is a side view, and FIG. 4 is claim 2 of the present invention.
FIG. 5 is an embodiment corresponding to claim 3 of the present invention, and is a front view showing a state in which a workpiece with dummy material is set on a wire saw. FIG. 6 is a perspective view illustrating the cutting section of a multi-wire saw used for boat fishing, and FIG. 7 is an enlarged view of the workpiece and lifting platform of the same wire saw. FIG. 3B is an enlarged perspective view showing a state in which the dummy material has been cut, and FIG. 3B is an enlarged side view showing the wafer portion. l, 2.3...Groove roller 4...Wire 5.
...Wire row 6--Work 6-1...Wafer 8...Primary dummy plate 9...Base 10...Pushing table 18
...Secondary dummy plate 19...Magnetic base 2
8.38...Tertiary dummy board Applicant Sumitomo Metal Industries Co., Ltd. Agent Patent attorney Yoshihisa Oshida, Aiko □ Figure 1 Figure 2 Figure 3 Figure 4 Figure 7 (A) So (B)

Claims (1)

【特許請求の範囲】 1 走行するワイヤと被切断物の間に砥粒を含む加工液を供
給し、当該ワイヤが形成する所定ピッチのワイヤ列に被
切断物を押付けながら研削作用によって多数のウェハに
切断するマルチワイヤソーにおいて、前記被切断物の下
面に脆性材料製の一次ダミー板を接着し、当該一次ダミ
ー板の下面に磁性材料製の二次ダミー板を接着し、当該
二次ダミー板とワーク押上台上の鋼製ベースとの間に磁
石製の三次ダミー板を介在させて磁力で吸着固定した状
態で切断を行い、ワイヤが三次ダミー板に切り込んだ時
点で切断を停止し、一次ダミー板の切断片と二次ダミー
板の切断片が接着した被切断物のウェハを三次ダミー板
から分離することを特徴とするマルチワイヤソーによる
切断方法。 2 請求項1記載の切断方法において、一次ダミー板を省略
し、被切断物の下面に磁性材料製の二次ダミー板を接着
することを特徴とするマルチワイヤソーによる切断方法
。 3 請求項1記載の切断方法において、三次ダミー板を磁性
材料製とし、該三次ダミー板を二次ダミー板と共に磁石
製のベースに吸着固定することを特徴とするマルチワイ
ヤソーによる切断方法。
[Scope of Claims] 1. A processing liquid containing abrasive grains is supplied between a traveling wire and an object to be cut, and a large number of wafers are In a multi-wire saw that cuts the object, a primary dummy plate made of a brittle material is bonded to the bottom surface of the object to be cut, a secondary dummy plate made of a magnetic material is bonded to the bottom surface of the primary dummy plate, and the secondary dummy plate and Cutting is performed with a tertiary dummy plate made of a magnet interposed between the steel base on the workpiece lifting table and fixed by magnetic force. Cutting is stopped when the wire cuts into the tertiary dummy plate, and the primary dummy plate is fixed. A cutting method using a multi-wire saw, characterized in that a wafer to be cut, to which a cut piece of a plate and a cut piece of a secondary dummy plate are adhered, is separated from a tertiary dummy plate. 2. A cutting method using a multi-wire saw according to claim 1, characterized in that the primary dummy plate is omitted and a secondary dummy plate made of a magnetic material is bonded to the lower surface of the object to be cut. 3. A cutting method using a multi-wire saw according to claim 1, characterized in that the tertiary dummy plate is made of a magnetic material, and the tertiary dummy plate and the secondary dummy plate are attracted and fixed to a magnetic base.
JP2296699A 1990-11-01 1990-11-01 Cutting method with multi-wire saw Expired - Fee Related JPH0790547B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2296699A JPH0790547B2 (en) 1990-11-01 1990-11-01 Cutting method with multi-wire saw

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2296699A JPH0790547B2 (en) 1990-11-01 1990-11-01 Cutting method with multi-wire saw

Publications (2)

Publication Number Publication Date
JPH04169205A true JPH04169205A (en) 1992-06-17
JPH0790547B2 JPH0790547B2 (en) 1995-10-04

Family

ID=17836945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2296699A Expired - Fee Related JPH0790547B2 (en) 1990-11-01 1990-11-01 Cutting method with multi-wire saw

Country Status (1)

Country Link
JP (1) JPH0790547B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5715806A (en) * 1994-12-15 1998-02-10 Sharp Kabushiki Kaisha Multi-wire saw device for slicing a semi-conductor ingot into wafers with a cassette for housing wafers sliced therefrom, and slicing method using the same
EP0947300A2 (en) * 1998-04-01 1999-10-06 Nippei Toyama Corporation An ingot slicing method, an ingot manufacturing method and a sliced ingot grinding apparatus
US7025665B2 (en) * 2004-03-30 2006-04-11 Solaicx, Inc. Method and apparatus for cutting ultra thin silicon wafers
CN103586988A (en) * 2013-11-25 2014-02-19 王金生 Scroll saw cutting machine

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5715806A (en) * 1994-12-15 1998-02-10 Sharp Kabushiki Kaisha Multi-wire saw device for slicing a semi-conductor ingot into wafers with a cassette for housing wafers sliced therefrom, and slicing method using the same
EP0947300A2 (en) * 1998-04-01 1999-10-06 Nippei Toyama Corporation An ingot slicing method, an ingot manufacturing method and a sliced ingot grinding apparatus
EP0947300A3 (en) * 1998-04-01 2002-04-24 Nippei Toyama Corporation An ingot slicing method, an ingot manufacturing method and a sliced ingot grinding apparatus
US7025665B2 (en) * 2004-03-30 2006-04-11 Solaicx, Inc. Method and apparatus for cutting ultra thin silicon wafers
CN103586988A (en) * 2013-11-25 2014-02-19 王金生 Scroll saw cutting machine

Also Published As

Publication number Publication date
JPH0790547B2 (en) 1995-10-04

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