JPH04167709A - Wire bonding method for surface acoustic wave element - Google Patents
Wire bonding method for surface acoustic wave elementInfo
- Publication number
- JPH04167709A JPH04167709A JP2293812A JP29381290A JPH04167709A JP H04167709 A JPH04167709 A JP H04167709A JP 2293812 A JP2293812 A JP 2293812A JP 29381290 A JP29381290 A JP 29381290A JP H04167709 A JPH04167709 A JP H04167709A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- interdigital electrode
- wave element
- bonding
- surface wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 7
- 238000010897 surface acoustic wave method Methods 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000007547 defect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000035939 shock Effects 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 230000006835 compression Effects 0.000 abstract 2
- 238000007906 compression Methods 0.000 abstract 2
- 238000004299 exfoliation Methods 0.000 abstract 1
- 238000003825 pressing Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 3
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明１ｘ、表面波素子にワイヤボンディングにより
ワイヤを接合する方法に関するものである０〔従来の技
術〕
第４図は一般的な表面波素子を示Ｔ図であり、図におい
て、１は表面波素子用結晶基板、２は丁だれ状電極３に
接続されているワイヤである。４ａは入力側リード、４
ｔ）ＧＺ出力側リードで１外部への接続はこれらの端子
により行われる。上記ワイヤ２は、ウェッジワイヤボン
ディング装置にてすだれ状電極３に接続される。ウェッ
ジワイヤボンディングは、ワイヤに超音波を印加し７て
接合を行うものである。[Detailed Description of the Invention] [Industrial Application Field] This invention 1x relates to a method of bonding a wire to a surface wave element by wire bonding0 [Prior Art] Fig. 4 shows a general surface wave element. This is a T-diagram showing 1, in which 1 is a crystal substrate for a surface wave element, and 2 is a wire connected to a serpentine electrode 3. 4a is the input side lead, 4
t) GZ output side lead 1 Connection to the outside is made through these terminals. The wire 2 is connected to the interdigital electrode 3 using a wedge wire bonding device. Wedge wire bonding involves applying ultrasonic waves to wires to perform bonding.
次に動作について説明する。表面波素子への電気信号は
入力側リード仏間に加えられる。この電気信号は、ワイ
ヤ２を通ってすだれ状電極３に印加される。この′ｗＬ
気信号はすだれ状電極３において表面波に変換され、結
晶基板１の上を伝搬して、出力側の丁だれ状電極３に伝
わり、ワイヤ２を通って出力側リード４ｂに出力される
。Next, the operation will be explained. An electrical signal to the surface wave element is applied to the input side lead spacing. This electrical signal is applied to the interdigital electrode 3 through the wire 2 . This'wL
The air signal is converted into a surface wave at the interdigital electrode 3, propagates on the crystal substrate 1, is transmitted to the output side interdigital electrode 3, passes through the wire 2, and is output to the output side lead 4b.
従来の表面波素子は以上のように構成されているので、
ウェッジワイヤボンディングの超音波により、ワイヤと
結晶基板上のすだれ状電極を接合Ｔるための安定条件が
狭く、ひどい場合、すだれ状電極かにがれを発生したり
、基板が割れるなどの問題点があった。Conventional surface wave elements are configured as described above, so
Due to the ultrasonic wave of wedge wire bonding, the stability conditions for bonding the wire and the interdigital electrode on the crystal substrate are narrow, and in severe cases, the interdigital electrode may peel or the substrate may crack. was there.
本発明はこのような問題点を解消するためになされたも
ので、ワイヤと電極の接続Ｔｉ：安定して行い得るワイ
ヤボンディング方法を提供しようとするものである。The present invention has been made to solve these problems, and aims to provide a wire bonding method that can stably connect Ti wires and electrodes.
本発明に係る表面波素子のワイヤボンデイング方法は、
ワイヤとすだれ状電極を超音波併用熱圧着ポールボンデ
ィングを用いて接続する際Ｇこ、表面波素子用結晶基板
の結晶軸と超音波の印加方向を９０度ずらせたものであ
る。The wire bonding method for a surface wave device according to the present invention includes:
When connecting wires and interdigital electrodes using thermocompression pole bonding combined with ultrasound, the crystal axis of the surface wave element crystal substrate and the direction of ultrasound application are shifted by 90 degrees.
本発明における表面波素子のワイヤボンデイング方法は
、ワイヤ圧着時の衝撃を軽減し、すだれ状電極のはがれ
や基板のひび割れを防止する。The wire bonding method for a surface wave device according to the present invention reduces the impact during wire crimping and prevents peeling of the interdigital electrode and cracking of the substrate.
以下この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１肉はこの発明を実施した表面波素子の要部拡大図で
ある。丁だれ状電極３は結晶基板１の表面に形成されて
いる。すだれ状電極３は、動作周波数、基板の材質、下
地への付着力などを考慮してアルミニウムが広く用いら
れ、数千オングストロームの膜厚である。結晶基板１は
水晶やＬ ｉＮ ｂ Ｏｓ、ＬｉＴａ（）＋ 、 Ｂｉ
ＧθＯ１などが使用きれている。特にＬｉＮｂＯ５など
は、機械的衝撃に弱く、割れたり、欠けたすしや丁い。The first part is an enlarged view of a main part of a surface wave element implementing the present invention. The tapered electrode 3 is formed on the surface of the crystal substrate 1. Aluminum is widely used for the interdigital electrode 3 in consideration of operating frequency, material of the substrate, adhesion to the base, etc., and has a film thickness of several thousand angstroms. The crystal substrate 1 is made of quartz, LiNbOs, LiTa()+, Bi
GθO1 etc. are used up. In particular, materials such as LiNbO5 are susceptible to mechanical shock and may crack or chip.
ワイヤ２の材質は、ウェッジワイヤボンディングではア
ルミニウムか一般的に使用されている。The material of the wire 2 is aluminum, which is generally used in wedge wire bonding.
ウェッジワイヤボンディングにてワイヤ２をすだれ状の
電極３の薄い膜の上に接合する場合、第２図イに示すよ
うに、ワイヤ２の先端がつぶれ、本来の太さより減少す
る。この程度のつぶれは１通常の基板には影響ないが、
表面波素子Ｏこ使用される結晶基板では、つぶれるとき
の機械的衝撃力により・結晶基板１が割れたり、すだれ
状電極３がはがれたりして信頼性のある接続ができない
。When the wire 2 is bonded onto the thin film of the interdigital electrode 3 by wedge wire bonding, the tip of the wire 2 is crushed and becomes smaller than its original thickness, as shown in FIG. 2A. This degree of crushing does not affect normal circuit boards, but
When the crystal substrate used in the surface wave device is crushed, the mechanical impact force caused by the crushing causes the crystal substrate 1 to crack or the interdigital electrode 3 to peel off, making it impossible to establish a reliable connection.
本発明では、結晶基板３に加わる機械的衝撃を弱め／ｌ
）ため、超音波併用ポールボンディングによるボール側
を選んだもので、そσ〕接合状態を第２図口に断面で示
している。ワイヤボールの直径は、ワイヤの数倍あるた
め、結晶基板１や丁だれ状電極３に与える機械的衝撃が
少なくなり、良好に接続される。In the present invention, the mechanical impact applied to the crystal substrate 3 is weakened/l
) Therefore, we chose the ball side using ultrasonic pole bonding, and the bonded state is shown in cross section in Figure 2. Since the diameter of the wire ball is several times that of the wire, the mechanical impact applied to the crystal substrate 1 and the serpentine electrode 3 is reduced, resulting in a good connection.
しかしながら、実際にワイヤボンディングを行ってみる
と、第２図へに示すように、結晶基板１にひびが入る不
良が発生した。この原因は結晶基板１の結晶軸とワイヤ
ボンディングを行うときの超音波の印加方向に関係があ
り、これが不適切な場合に不良が発生することが判明し
た。However, when wire bonding was actually performed, a defect occurred in which the crystal substrate 1 was cracked, as shown in FIG. It has been found that the cause of this is related to the crystal axis of the crystal substrate 1 and the direction in which ultrasonic waves are applied during wire bonding, and that defects occur when this is inappropriate.
第８図はワイヤボンディングの超音波印加方向と結晶基
板の結晶軸間の角度を横軸にとり、不良発生率を縦軸に
とってグラフ化したものである。FIG. 8 is a graph in which the horizontal axis represents the angle between the ultrasonic application direction for wire bonding and the crystal axis of the crystal substrate, and the vertical axis represents the failure rate.
これにより、結晶軸と超音波印加方向が９０度の場合に
不良発生率が低く、良好な接合がされることがわかる。This shows that when the crystal axis and the ultrasonic application direction are 90 degrees, the failure rate is low and good bonding is achieved.
そこで、本発明では、結晶基板３に加わる機械的衝撃を
弱めるため、超音波併用ポールボンディングによるボー
ル側を選ぶと同時に、超音波の印加方向を、結晶基板１
の結晶軸方向に対して９０度ずらすことにより、信頼性
の高い表面波素子を得ようとするものである。Therefore, in the present invention, in order to weaken the mechanical impact applied to the crystal substrate 3, the ball side for pole bonding combined with ultrasonic waves is selected, and at the same time, the direction of application of ultrasonic waves is changed to the crystal substrate 3.
By shifting the crystal axis by 90 degrees with respect to the crystal axis direction, it is attempted to obtain a highly reliable surface wave element.
以上のように本発明によれは、表面波素子の製作Ｇこお
いて不良発生率をきわめて低く抑えることができる。As described above, according to the present invention, it is possible to suppress the failure rate to an extremely low level during the manufacture of surface wave elements.
第１図は本発明を実施した表向波素子の要部を示す斜視
図、第２図イ、口、ハにワイヤボンディングの態様を示
す断面図、第８図は本発明の詳細な説明するための図、
第４図は一般的な表面波素子を示す斜視図である。
図中・ １は結晶基板、２はワイヤ・ ３はすだれ状電
極である。
なお肉中同−勾号は同一または相当部分を示す。Fig. 1 is a perspective view showing the main parts of a surface wave element embodying the present invention, Fig. 2 is a sectional view showing aspects of wire bonding, and Fig. 8 is a detailed explanation of the present invention. diagram for,
FIG. 4 is a perspective view showing a general surface wave element. In the figure, 1 is a crystal substrate, 2 is a wire, and 3 is an interdigital electrode. Note that the same or similar part in the meat indicates the same or equivalent part.
Claims (1)
イヤを超音波併用熱圧着ボールボンディングを用いて接
続する際に、ボール側をすだれ状電極に接合すると共に
、表面波素子用結晶基板の結晶軸と超音波の印加方向を
９０度ずらせたことを特徴とする表面波素子のワイヤボ
ンデイング方法。When connecting wires to the interdigital electrodes formed on the crystal substrate for surface wave devices using ultrasonic thermocompression ball bonding, the ball side is bonded to the interdigital electrodes, and the wires are bonded to the interdigital electrodes formed on the crystal substrate for surface wave devices. A wire bonding method for a surface wave device, characterized in that the crystal axis and the direction of application of ultrasonic waves are shifted by 90 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2293812A JPH04167709A (en) | 1990-10-30 | 1990-10-30 | Wire bonding method for surface acoustic wave element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2293812A JPH04167709A (en) | 1990-10-30 | 1990-10-30 | Wire bonding method for surface acoustic wave element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04167709A true JPH04167709A (en) | 1992-06-15 |
Family
ID=17799471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2293812A Pending JPH04167709A (en) | 1990-10-30 | 1990-10-30 | Wire bonding method for surface acoustic wave element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04167709A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007053130A (en) * | 2005-08-15 | 2007-03-01 | Matsushita Electric Ind Co Ltd | Connection structure and connection method |
-
1990
- 1990-10-30 JP JP2293812A patent/JPH04167709A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007053130A (en) * | 2005-08-15 | 2007-03-01 | Matsushita Electric Ind Co Ltd | Connection structure and connection method |
| US8012869B2 (en) | 2005-08-15 | 2011-09-06 | Panasonic Corporation | Bonded structure and bonding method |
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