JPH04165916A - Gate circuit of igbt - Google Patents
Gate circuit of igbtInfo
- Publication number
- JPH04165916A JPH04165916A JP28703190A JP28703190A JPH04165916A JP H04165916 A JPH04165916 A JP H04165916A JP 28703190 A JP28703190 A JP 28703190A JP 28703190 A JP28703190 A JP 28703190A JP H04165916 A JPH04165916 A JP H04165916A
- Authority
- JP
- Japan
- Prior art keywords
- igbt
- voltage
- emitter
- gate
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Protection Of Static Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はＩ ＧＢＴにおける過電流時のＩ ＧＢＴの保
護に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to protection of an IGBT during overcurrent in the IGBT.
［従来の技術］
従来のＩＧＢＴの過電流保護は、特開昭６３−９５７２
８号公報に記載のように、Ｉ Ｃ；ＢＴのケー］・にダ
イオードを取付は過電流時ケート、エミッタ間電圧か」
１昇するのを押さえたり、又は特開昭６３−９５７７２
号公報に記載のように、ゲート、エミッタ間にツェナー
タイオードを取付はツェナー電圧以−にに上昇するのを
押さえたりしていた。[Prior art] Conventional IGBT overcurrent protection is disclosed in Japanese Patent Application Laid-Open No. 63-9572.
As stated in Publication No. 8, installing a diode on the IC and BT cables will reduce the voltage between the gate and emitter in the event of an overcurrent.
1 to prevent it from rising, or JP-A-63-95772
As described in the publication, a Zener diode was installed between the gate and the emitter to prevent the Zener voltage from rising any higher.
以上のような過電流保護方法は、ある程度ＩＧＢ’ｒの
過電流を押さえることは出来るか、実際に使用するゲー
ト電圧１２〜１５Ｖの範囲では保護出来る時間が２０μ
ｓ程度しかなく、過電流検出遅れの時間まで考慮すると
Ｉ ＧＢＴの過電流保護は実際には難しい場合が多い。Is it possible to suppress the overcurrent of IGB'r to some extent with the overcurrent protection method described above?In the gate voltage range of 12 to 15V actually used, the protection time is 20μ
The overcurrent protection for IGBTs is often difficult in practice, considering the overcurrent detection delay time.
［発明か解決しようとする課題］
上記従来技術は、過電流検出遅れの時間まで考慮したＩ
ＧＢＴの過電流保護の配慮がされておらす、実際の過
電流保護は難しいという問題かあった。[Problem to be solved by the invention] The above-mentioned conventional technology has an I
Although consideration has been given to GBT overcurrent protection, there was a problem that actual overcurrent protection was difficult.
本発明の目的は、過電流時Ｉ ＧＢＴか破壊するまでの
時間を長くすることにある。An object of the present invention is to prolong the time it takes for an IGBT to break down when an overcurrent occurs.
［課題を解決するための手段］
」１記目的を達成するために、過電流時ケ−１・、エミ
ッタ間電圧を通常動作時の電圧より低く設定し、過電流
時のみ、それが働くようにしたものである。[Means for Solving the Problems] In order to achieve the purpose stated in item 1, the voltage between the emitters is set lower than the voltage during normal operation in case of overcurrent, and the voltage is activated only during overcurrent. This is what I did.
電圧クランプ回路は、過電温時動作する。これにより、
電流を低く押さえることが出来る。The voltage clamp circuit operates during overcurrent. This results in
Current can be kept low.
［実施例］ 以下、本発明の一実施例を第１図により説明する。[Example] An embodiment of the present invention will be described below with reference to FIG.
過電流検出にＩ ＧＢＴのゲート、エミッタ間の電圧の
上昇を検出することは従来と同じであるか、第１図に示
すようにＩＧＢＴ７のゲートとエミッタの間に直接ツェ
ナーダイオード５を挿入するのではなく、途中にトラン
ジスタ４を挿入することにより、通常動作の場合はこの
ツェナーダイオード５は使用しない。For overcurrent detection, detecting the voltage increase between the gate and emitter of the IGBT is the same as in the conventional method, or is it possible to insert a Zener diode 5 directly between the gate and emitter of the IGBT7 as shown in Figure 1? Instead, by inserting a transistor 4 in the middle, this Zener diode 5 is not used during normal operation.
今、ＩＧＢＴ７に過電流が流れた場合コンパレータ２に
より基準電圧１と比較し、その電圧よりＩＧＢＴ７のゲ
ー］・、エミッタ間電圧が上昇した場合コンパレータ２
か動作しトランジスタ４がオンする。これにより、ＩＧ
ＢＴ７のゲート・エミッタ間電圧はツェナーダイオード
５のツェナー電圧およびダイオード６の順電圧降下、ト
ランジスタ４のコレクタ・エミッタ間電圧の和にクラン
プされる。Now, if an overcurrent flows through IGBT 7, comparator 2 compares it with reference voltage 1, and from that voltage, IGBT 7 gate]. If the emitter voltage increases, comparator 2
The transistor 4 is turned on. This allows I.G.
The gate-emitter voltage of BT7 is clamped to the sum of the Zener voltage of Zener diode 5, the forward voltage drop of diode 6, and the collector-emitter voltage of transistor 4.
なお、第１図に記入しているモノマルチ３は、ＩＧＢＴ
７のゲート・エミッタ間電圧が上昇しコンパレータ２が
動作、トランジスタ４がオンした際このモノマルチがな
いとＩＧＢＴ７のゲート、エミッタ間電圧か低く下がる
と同時に再びトランジスタ４がオフするのを防ぐために
設けたものである。また、ダイオード６はＩＧＢＴ７を
ターンオフさせるのにゲート・エミッタ間に逆電圧を印
加するが、この時ツェナーダイオード５及びトランジス
タ４のルートで電流が流れるのを防ぐためのものである
。Furthermore, the monomulti 3 shown in Figure 1 is an IGBT.
When the voltage between the gate and emitter of IGBT 7 rises, comparator 2 operates, and transistor 4 turns on, this monomultiplier is provided to prevent transistor 4 from turning off again at the same time as the voltage between the gate and emitter of IGBT 7 drops to a low level. It is something that Further, the diode 6 applies a reverse voltage between the gate and emitter to turn off the IGBT 7, and is used to prevent current from flowing through the route of the Zener diode 5 and the transistor 4 at this time.
上記の動作をＩＧＢＴ７の電圧、電流で示したものを第
２図に示す。FIG. 2 shows the above operation in terms of the voltage and current of the IGBT 7.
このツェナーダイオード５のツェナー電圧は通常はトラ
ンジスタ４がオフしているので、ＩＧＢＴ７を通常動作
させるときのゲート・エミッタ間電圧以下に設定するこ
とが可能である。Since the transistor 4 is normally off, the Zener voltage of the Zener diode 5 can be set to a value lower than the gate-emitter voltage when the IGBT 7 is normally operated.
本発明の別の実施例を第３図に示す。この場合、モノマ
ルチ、ツェナーダイオード、ダイオードを複数個用いて
いる。この時、ツェナーダイオードのツェナー電圧は５
ａ、５ｂ、５ｃ・・の順に低くなるように設定する。そ
うすることにより、第４図に示すようにコレクタ電流を
徐々に少なくすることが出来、ターンオフ時のコレクタ
・エミッタ電圧の跳上りを押さえることが出来る。Another embodiment of the invention is shown in FIG. In this case, a plurality of monomultis, Zener diodes, and diodes are used. At this time, the Zener voltage of the Zener diode is 5
The values are set in descending order of a, 5b, 5c, etc. By doing so, the collector current can be gradually reduced as shown in FIG. 4, and the jump in collector-emitter voltage at turn-off can be suppressed.
本実施例ではトランジスタを用いたが、トランジスタの
代りにＦＥＴ、ＧＴ○、サイリスク等を用いてもよい。Although transistors are used in this embodiment, FETs, GT○, Cyrisk, etc. may be used instead of transistors.
また、電圧クランプ回路として本実施例ではツェナーダ
イオードを用いたが、その代りにダイオードを直列接続
して実現させてもよい。Further, although a Zener diode is used as the voltage clamp circuit in this embodiment, it may be realized by connecting diodes in series instead.
本発明によれば、過電流時ＩＧＢＴが破壊するまでの時
間を長くすることが出来るので、過電流時Ｔ ＧＢＴの
保護が容易となる。According to the present invention, it is possible to lengthen the time it takes for the IGBT to break down in the event of an overcurrent, making it easier to protect the TGBT in the event of an overcurrent.
本発明によれば、過電流時Ｉ ＧＢＴに流れる電流を低
く押さえることができるので、Ｉ ＧＢＴか破壊するま
での時間を長くすることが出来、過電流時ＩＧＢＴの保
護が容易となる。According to the present invention, since the current flowing through the IGBT during an overcurrent can be suppressed to a low level, the time until the IGBT is destroyed can be lengthened, and the IGBT can be easily protected during an overcurrent.
第１図は本発明の一実施例を示す図、第２図は第１図の
動作説明図、第３図は本発明の他の実施例を示す図、第
４図は第３図の動作説明図である。
■・・・基準電圧、４・・トランジスタ、５・ツエナ−
第１図
第２図
一管
第３図
基４１シ江レヘ゛°ル
第４図
１０７一FIG. 1 is a diagram showing one embodiment of the present invention, FIG. 2 is an explanatory diagram of the operation of FIG. 1, FIG. 3 is a diagram showing another embodiment of the present invention, and FIG. 4 is the operation of FIG. 3. It is an explanatory diagram. ■... Reference voltage, 4... Transistor, 5... Zener
Figure 1 Figure 2 Figure 3 Base 41 Level Figure 4 107-
Claims (1)
ンプ回路と直列に半導体スイッチを設けたことを特徴と
するＩＧＢＴのゲート回路。 ２、半導体スイッチは、ＩＧＢＴのゲート・エミッタ間
電圧と基準電圧との比較を行い、ゲート・エミッタ間電
圧が基準電圧より高くなつた場合にオンすることを特徴
とするＩＧＢＴのゲート回路。[Claims] 1. A gate circuit for an IGBT, characterized in that a semiconductor switch is provided in series with a voltage clamp circuit between the gate and emitter of the IGBT. 2. A gate circuit for an IGBT, wherein the semiconductor switch compares the voltage between the gate and emitter of the IGBT with a reference voltage, and turns on when the voltage between the gate and emitter becomes higher than the reference voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28703190A JPH04165916A (en) | 1990-10-26 | 1990-10-26 | Gate circuit of igbt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28703190A JPH04165916A (en) | 1990-10-26 | 1990-10-26 | Gate circuit of igbt |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04165916A true JPH04165916A (en) | 1992-06-11 |
Family
ID=17712151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28703190A Pending JPH04165916A (en) | 1990-10-26 | 1990-10-26 | Gate circuit of igbt |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04165916A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003284318A (en) * | 2002-01-17 | 2003-10-03 | Mitsubishi Electric Corp | Drive circuit for power semiconductor element |
| US6906574B2 (en) | 2002-07-30 | 2005-06-14 | Mitsubishi Denki Kabushiki Kaisha | Drive circuit for driving power semiconductor device |
| CN106411113A (en) * | 2016-11-18 | 2017-02-15 | 美的集团股份有限公司 | Grid protection circuit and power electronic equipment |
| CN106411114A (en) * | 2016-11-18 | 2017-02-15 | 美的集团股份有限公司 | Gate protection circuit and power electronic equipment |
| CN109787501A (en) * | 2019-03-25 | 2019-05-21 | 广东美的制冷设备有限公司 | Intelligent power module driving circuit, air conditioner and its air-conditioner controller |
-
1990
- 1990-10-26 JP JP28703190A patent/JPH04165916A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003284318A (en) * | 2002-01-17 | 2003-10-03 | Mitsubishi Electric Corp | Drive circuit for power semiconductor element |
| US6967519B2 (en) | 2002-01-17 | 2005-11-22 | Mitsubishi Denki Kabushiki Kaisha | Drive circuit for a power semiconductor device |
| DE10301655B4 (en) * | 2002-01-17 | 2009-06-10 | Mitsubishi Denki K.K. | Control circuit for a power semiconductor device |
| US6906574B2 (en) | 2002-07-30 | 2005-06-14 | Mitsubishi Denki Kabushiki Kaisha | Drive circuit for driving power semiconductor device |
| CN106411113A (en) * | 2016-11-18 | 2017-02-15 | 美的集团股份有限公司 | Grid protection circuit and power electronic equipment |
| CN106411114A (en) * | 2016-11-18 | 2017-02-15 | 美的集团股份有限公司 | Gate protection circuit and power electronic equipment |
| CN109787501A (en) * | 2019-03-25 | 2019-05-21 | 广东美的制冷设备有限公司 | Intelligent power module driving circuit, air conditioner and its air-conditioner controller |
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