JPH04161839A - Spectrochemical analyzer - Google Patents
Spectrochemical analyzerInfo
- Publication number
- JPH04161839A JPH04161839A JP2287051A JP28705190A JPH04161839A JP H04161839 A JPH04161839 A JP H04161839A JP 2287051 A JP2287051 A JP 2287051A JP 28705190 A JP28705190 A JP 28705190A JP H04161839 A JPH04161839 A JP H04161839A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- light
- raman
- activator
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001069 Raman spectroscopy Methods 0.000 claims abstract description 25
- 238000010521 absorption reaction Methods 0.000 claims abstract description 16
- 239000012190 activator Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 230000003287 optical effect Effects 0.000 claims description 14
- 238000004611 spectroscopical analysis Methods 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 abstract description 5
- 238000002835 absorbance Methods 0.000 abstract description 3
- 238000007599 discharging Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000006355 external stress Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009658 destructive testing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Landscapes
- Spectrometry And Color Measurement (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は破壊検査及び経時的な測定を行うための技術、
特に、半導体装置の製造プロセスを確立するために用い
て効果のある分光分析装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a technique for performing destructive inspection and measurement over time;
In particular, the present invention relates to a spectroscopic analysis device that is effective when used to establish a manufacturing process for semiconductor devices.
例えば、半導体装置の製造においては、ＣＶＤ（Ｃｈｅ
ｍｉｃａｌ Ｖａｐｅｒ Ｄｅｐｏｓｉｔｉｏｎ）、ス
パッタなどで生成された薄膜の構造的特性、例えば、温
度変化や外部応力による膜質変動の過程について分析、
評価したい要求がある。従来、この種の要求に対しては
、赤外吸収分光器を用いた赤外吸収法及びラマン分光器
を用いたラマン分光法が用いられている。For example, in the manufacture of semiconductor devices, CVD (Chemistry)
analysis of the structural characteristics of thin films produced by sputtering, etc., such as the process of film quality fluctuation due to temperature changes and external stress,
I have a request that I would like to evaluate. Conventionally, in response to this type of request, an infrared absorption method using an infrared absorption spectrometer and a Raman spectroscopy using a Raman spectrometer have been used.
赤外吸収分光器は、非対称振動子の観測に用いられ、ラ
マン分光器は対称振動子の観測に用いられる。An infrared absorption spectrometer is used to observe asymmetric oscillators, and a Raman spectrometer is used to observe symmetric oscillators.
ところで、本発明者は、薄膜の膜質評価における諸問題
について検討した。By the way, the present inventor has studied various problems in evaluating the film quality of thin films.
以下は、本発明者によって検討された技術であり、その
概要は次の通りである。The following are the techniques studied by the present inventor, and the outline thereof is as follows.
すなわち、応力解析、結晶構造の評価にはラマン分光器
が用いられ、膜の組成などには赤外吸収分光器が用いら
れるが、赤外吸収分光器とラマン分光器は、互いに相補
する関係にある。すなわち、赤外吸収分光器は分子の非
対称振動子の観測は可能であるが対称振動子の観測はで
きない。逆に、ラマン分光器は分子の対称振動子の観測
は可能であるが、非対称振動子の観測はできない。した
がって、分子の固有振動である非対称振動子と対称振動
子とを１台の装置で同時に観測することはできない。In other words, a Raman spectrometer is used for stress analysis and evaluation of crystal structure, and an infrared absorption spectrometer is used for measuring film composition, etc., but infrared absorption spectrometers and Raman spectrometers are complementary to each other. be. In other words, an infrared absorption spectrometer can observe asymmetric oscillators of molecules, but cannot observe symmetric oscillators. Conversely, Raman spectrometers can observe symmetric oscillators in molecules, but cannot observe asymmetric oscillators. Therefore, it is not possible to simultaneously observe an asymmetric oscillator and a symmetric oscillator, which are the natural vibrations of molecules, with one device.
とごろが、前記の如く１つの装置で非対称振動子と対称
振動子を同時に観測および測定することができないため
、加熱処理や組成変形を伴うような経時変化を測定する
場合、−面からの測定しか行えず、その挙動メカニズム
の解析を十分に行えないという問題のあることが本発明
者によって見出された。However, as mentioned above, it is not possible to simultaneously observe and measure an asymmetrical oscillator and a symmetrical oscillator with one device, so when measuring changes over time that involve heat treatment or compositional deformation, it is necessary to measure from the - side. The inventors have discovered that there is a problem in that the behavior mechanism cannot be sufficiently analyzed.
そこで、本発明の目的は、ラマン活性子及び赤外活性子
を同時に測定することのできる技術を提供することにあ
る。Therefore, an object of the present invention is to provide a technique that can simultaneously measure Raman activators and infrared activators.
本発明の前記目的と新規な特徴は、本明細嘗の記述及び
添付図面から明らかになるであろう。The above objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.
本願において開示される発明のうち、代表的なものの概
要を簡単に説明すれば、以下の通りである。A brief overview of typical inventions disclosed in this application is as follows.
本願において開示される発明のうち、代表的なものの概
要を簡単に説明すれば、以下の通りである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、試料に対して光を照射する光学系と、前記試
料からの散乱光を受けてラマン分活性子を分析するラマ
ン分光器と、前記試料を透過した光を受けて赤外活性子
を分析する赤外吸収分光器とを備えるようにしたもので
ある。That is, an optical system that irradiates light onto a sample, a Raman spectrometer that receives scattered light from the sample and analyzes Raman active molecules, and a Raman spectrometer that receives light that has passed through the sample and analyzes infrared active molecules. The device is equipped with an infrared absorption spectrometer.
上記した手段によれば、ラマン分光器と赤外吸収分光器
が同時に動作し、対称振動の分子結合及び非対称振動の
分子結合を同時に観測することができる。この観測は、
試料の破壊検査においても各分子結合の変化を同時に観
測することができる。According to the above-mentioned means, the Raman spectrometer and the infrared absorption spectrometer operate simultaneously, and it is possible to simultaneously observe molecular bonds with symmetric vibrations and molecular bonds with asymmetric vibrations. This observation is
Changes in each molecular bond can be observed simultaneously during destructive testing of samples.
したがって、膜質の変化やメカニズムの解明が可能にな
り、製品の品質向上を図ることができる。Therefore, it becomes possible to elucidate changes in film quality and mechanisms, and it is possible to improve product quality.
第１ｖ！Ｊは本発明による分光分析装置の一実施例を示
すブロック図である。1st v! J is a block diagram showing an embodiment of a spectroscopic analysis device according to the present invention.
試料ｌ（例えば、ウェハ）は試料室２に設置され、試料
ｌには赤外の波長領域を有する光源３からの光が２系統
の光学系を介して照射される。その光路４からの光は透
過し、光路５からの光は散乱光となる。この散乱光を受
光するために、試料１に面してレンズ６が配設され、そ
の後段にはレーリ散乱を除去するためのアナライザ７が
配設され、更にアナライザ７の後段にはラマン分光器８
が配設されている。A sample 1 (for example, a wafer) is placed in a sample chamber 2, and the sample 1 is irradiated with light from a light source 3 having an infrared wavelength range through two optical systems. The light from the optical path 4 is transmitted, and the light from the optical path 5 becomes scattered light. In order to receive this scattered light, a lens 6 is disposed facing the sample 1, an analyzer 7 for removing Rayleigh scattering is disposed at the rear stage, and a Raman spectrometer is disposed at the rear stage of the analyzer 7. 8
is installed.
一方、光路４の延長上（試料１の出力側）にはミラー９
が配設され、その出射光路上にはスリット１０が配設さ
れ、その後段には赤外吸収分光器１１が設置されている
。On the other hand, a mirror 9 is provided on the extension of the optical path 4 (on the output side of the sample 1).
is arranged, a slit 10 is arranged on its output optical path, and an infrared absorption spectrometer 11 is arranged at the rear stage.
また、試料室２には不図示の手段によって、加熱、冷却
、排気、加圧などを付与して試料設置雰囲気を可変でき
るようにしている。また、加湿、Ｘ線などを付与する手
段も設けている。Furthermore, heating, cooling, exhaust, pressurization, etc. are applied to the sample chamber 2 by means not shown, so that the atmosphere in which the sample is placed can be varied. Additionally, means for applying humidification, X-rays, etc. are also provided.
以上の構成において、加熱、冷却、排気などの可変操作
を行いながら光源３を点灯する。光源３で発光した光は
、光路４及び光路５の各々を経由して試料１に到達する
。光路５からの光は、試料ｌの表面で散乱し、その散乱
光がレンズ６、アナライザ７を介してラマン分光器８に
到達する。また、光路４からの光は、試料ｌを透過（吸
収）し、ミラー９及びスリットｌＯを経由して赤外吸収
分光器１１に到達する。赤外吸収分光！！ＩＩでは、第
２図に示すような波長と吸光度の関係が得られる。これ
により、加熱、冷却、排気などを行ったときの赤外活性
子、ラマン活性子の状態変化が同時に測定できる。この
結果、組成変化などの来歴が従来より明確になる。In the above configuration, the light source 3 is turned on while performing variable operations such as heating, cooling, and exhaust. The light emitted by the light source 3 reaches the sample 1 via each of the optical path 4 and the optical path 5. The light from the optical path 5 is scattered on the surface of the sample 1, and the scattered light reaches the Raman spectrometer 8 via the lens 6 and the analyzer 7. Further, the light from the optical path 4 passes through (absorbs) the sample 1, and reaches the infrared absorption spectrometer 11 via the mirror 9 and the slit 1O. Infrared absorption spectroscopy! ! In II, the relationship between wavelength and absorbance as shown in FIG. 2 is obtained. This makes it possible to simultaneously measure changes in the states of infrared activators and Raman activators when heating, cooling, exhausting, etc. are performed. As a result, the history of changes in composition etc. becomes clearer than before.
このように、赤外活性とラマン活性の原子結合状態の変
化などを同時に観察できるので、外部応力や温度変化が
同時に観察できるので、外部応力や温度変化による膜質
の変化などの内容及びメカニズムの解明が容易になる。In this way, changes in the atomic bonding state of infrared activity and Raman activity can be observed simultaneously, and external stress and temperature changes can also be observed simultaneously, making it possible to elucidate the contents and mechanisms of changes in film quality due to external stress and temperature changes. becomes easier.
特に、破壊検査（例えば、温度変化により膜質が変化（
脆弱化）するが、それが不可逆であるなどの膜の温度と
膜質の関係を調査するなど）においては、別々の試料を
用い、個々に測定する場合に比べ、試料ばらつきの影響
の考慮は不要になる。また、測定の迅速化が図られる。In particular, destructive inspection (e.g. changes in film quality due to temperature changes)
When investigating the relationship between film temperature and film quality (for example, when the temperature and film quality of a film are weakened) but are irreversible, there is no need to consider the effects of sample variation compared to when using separate samples and measuring them individually. become. In addition, measurement can be made faster.
以上の説明では、主として本発明者によってなされた発
明をその利用分野である半導体装置の膜質の変化などの
解明に適用する場合について説明したが、これに限定さ
れるものではなく、例えば、非対称振動子及び対称振動
子を同時に測定したものに広く適用可能である。例えば
、磁気ヘッドなとに適用することができる。In the above explanation, the invention made by the present inventor is mainly applied to elucidating changes in film quality of semiconductor devices, which is the field of application of the invention, but the present invention is not limited to this. It can be widely applied to measurements of oscillators and symmetrical oscillators simultaneously. For example, it can be applied to magnetic heads.
また、本発明は前記実施例に限定されるものではなく、
その要旨を逸脱しない範囲で種々変更可能であることは
言うまでもない。Furthermore, the present invention is not limited to the above embodiments,
It goes without saying that various changes can be made without departing from the gist of the invention.
本願において開示される発明のうち、代表的なものによ
って得られる効果を簡単に説明すれば、下記の通りであ
る。Among the inventions disclosed in this application, the effects obtained by typical ones are as follows.
すなわち、試料に対して光を照射する光学系と、前記試
料からの散乱光を受けてラマン分活性子を分析するラマ
ン分光器と、前記試料を透過した光を受けて赤外活性子
を分析する赤外吸収分光器とを備えるようにしたので、
膜質の変化やメカニズムの解明が可能になり、製品の品
質向上に寄与することができる。That is, an optical system that irradiates light onto a sample, a Raman spectrometer that receives scattered light from the sample and analyzes Raman active molecules, and a Raman spectrometer that receives light that has passed through the sample and analyzes infrared active molecules. Since it is equipped with an infrared absorption spectrometer that
This makes it possible to elucidate changes in film quality and mechanisms, which can contribute to improving product quality.
第１図は本発明による分光分析装置の一実施例を示すブ
ロック図、
第２図は赤外吸収分光器によって得られる吸光度特性図
である。
１・・・試料、２・・・試料室、３・・・光源、４・・
・光路、５・・・光路、６・・・レンズ、７・・・アナ
ライザ、８・・・ラマン分光器、９・ ・・ミラー、１
０・・・スリット、１１・・・赤外吸収分光器。
代理人 弁理士 小 川 勝 男
第１図
第２図
波長−シ−FIG. 1 is a block diagram showing an embodiment of a spectroscopic analyzer according to the present invention, and FIG. 2 is an absorbance characteristic diagram obtained by an infrared absorption spectrometer. 1...sample, 2...sample chamber, 3...light source, 4...
・Optical path, 5... Optical path, 6... Lens, 7... Analyzer, 8... Raman spectrometer, 9... Mirror, 1
0...Slit, 11...Infrared absorption spectrometer. Agent: Patent Attorney Katsoo Ogawa Figure 1 Figure 2 Wavelength Sea
Claims (1)
の散乱光を受けてラマン活性子を分析するラマン分光器
と、前記試料を透過した光を受けて赤外活性子を分析す
る赤外吸収分光器とを具備することを特徴とする分光分
析装置。 ２、前記試料に対し、外力を付与する手段を設けたこと
を特徴とする請求項１記載の分光分析装置。 ３、前記外力は、加熱、冷却、排気、加圧、加湿、Ｘ線
などであることを特徴とする請求項１記載の分光分析装
置。[Scope of Claims] 1. An optical system that irradiates light onto a sample, a Raman spectrometer that receives scattered light from the sample and analyzes Raman activators, and a Raman spectrometer that receives light that has passed through the sample and analyzes the 1. A spectroscopic analysis device comprising: an infrared absorption spectrometer for analyzing external activators. 2. The spectroscopic analysis apparatus according to claim 1, further comprising means for applying an external force to the sample. 3. The spectroscopic analysis apparatus according to claim 1, wherein the external force is heating, cooling, exhaust, pressurization, humidification, X-rays, or the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2287051A JPH04161839A (en) | 1990-10-26 | 1990-10-26 | Spectrochemical analyzer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2287051A JPH04161839A (en) | 1990-10-26 | 1990-10-26 | Spectrochemical analyzer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04161839A true JPH04161839A (en) | 1992-06-05 |
Family
ID=17712420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2287051A Pending JPH04161839A (en) | 1990-10-26 | 1990-10-26 | Spectrochemical analyzer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04161839A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013132734A1 (en) * | 2012-03-07 | 2013-09-12 | ソニー株式会社 | Observation device, observation program and observation method |
| CN106442401A (en) * | 2016-11-01 | 2017-02-22 | 北京华泰诺安技术有限公司 | Detection device and method combining Raman spectroscopy with near-infrared spectroscopy |
| WO2019092772A1 (en) * | 2017-11-07 | 2019-05-16 | 株式会社島津製作所 | Accessory for infrared spectrophotometer |
-
1990
- 1990-10-26 JP JP2287051A patent/JPH04161839A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013132734A1 (en) * | 2012-03-07 | 2013-09-12 | ソニー株式会社 | Observation device, observation program and observation method |
| JPWO2013132734A1 (en) * | 2012-03-07 | 2015-07-30 | ソニー株式会社 | Observation apparatus, observation program, and observation method |
| US10151910B2 (en) | 2012-03-07 | 2018-12-11 | Sony Corporation | Image analysis using microscope optical system |
| CN106442401A (en) * | 2016-11-01 | 2017-02-22 | 北京华泰诺安技术有限公司 | Detection device and method combining Raman spectroscopy with near-infrared spectroscopy |
| CN106442401B (en) * | 2016-11-01 | 2019-05-17 | 北京华泰诺安技术有限公司 | A kind of detection device and detection method of combination Raman spectrum and near infrared spectrum |
| WO2019092772A1 (en) * | 2017-11-07 | 2019-05-16 | 株式会社島津製作所 | Accessory for infrared spectrophotometer |
| JPWO2019092772A1 (en) * | 2017-11-07 | 2020-10-22 | 株式会社島津製作所 | Accessories for infrared spectrophotometer |
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