JPH04157757A - Resin-sealed semiconductor device and manufacture thereof - Google Patents
Resin-sealed semiconductor device and manufacture thereofInfo
- Publication number
- JPH04157757A JPH04157757A JP28193890A JP28193890A JPH04157757A JP H04157757 A JPH04157757 A JP H04157757A JP 28193890 A JP28193890 A JP 28193890A JP 28193890 A JP28193890 A JP 28193890A JP H04157757 A JPH04157757 A JP H04157757A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- cap
- epoxy resin
- semiconductor device
- filling port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229920005989 resin Polymers 0.000 claims abstract description 48
- 239000011347 resin Substances 0.000 claims abstract description 48
- 239000003822 epoxy resin Substances 0.000 claims abstract description 32
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 32
- 239000000945 filler Substances 0.000 claims abstract description 12
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 5
- 238000007872 degassing Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims 2
- 239000012530 fluid Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 abstract description 25
- 230000001070 adhesive effect Effects 0.000 abstract description 10
- 239000000853 adhesive Substances 0.000 abstract description 9
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000005192 partition Methods 0.000 abstract description 4
- 239000004593 Epoxy Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- XNMARPWJSQWVGC-UHFFFAOYSA-N 2-[3-[11-[[5-(dimethylamino)naphthalen-1-yl]sulfonylamino]undecanoylamino]propoxy]-4-[(5,5,8,8-tetramethyl-6,7-dihydronaphthalene-2-carbonyl)amino]benzoic acid Chemical compound CC1(C)CCC(C)(C)C=2C1=CC(C(=O)NC=1C=C(C(=CC=1)C(O)=O)OCCCNC(=O)CCCCCCCCCCNS(=O)(=O)C1=C3C=CC=C(C3=CC=C1)N(C)C)=CC=2 XNMARPWJSQWVGC-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 229920006334 epoxy coating Polymers 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、樹脂封止型半導体装置及びその製造方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a resin-sealed semiconductor device and a method for manufacturing the same.
（従来の技術）
従来、このような分野の技術としては、例えば実開昭６
３−１７４４５５号、沖研究開発Ｖｏ１．５６ ｈｃ４
。(Prior art) Conventionally, as a technology in this field, for example,
No. 3-174455, Oki Research and Development Vol. 1.56 hc4
.
分冊第２５〜２８真に記載されるものがあった。There was something written in volumes 25-28.
従来、Ｌ Ｓ Ｉ （Ｌａｒｇｅ ５ｃａｌｅ Ｉｎｔ
ｅｇｒａｔｉｏｎ）パッケージといえ；ｆ、 Ｄ Ｉ
Ｐ （Ｄｕａｌ Ｉｎ１ｉｎｅ Ｐａｃｋａｇｅ）に代
表される挿入型パッケージを意味していたが、高密度実
装に適したパッケージを求める市場のニーズと、ＬＳＩ
メーカーでの高密度実装に適したＬＳＩパッケージの一
つとして、ＰＰＧＡ（Ｐｌａｓｔｉｃ Ｐｉｎ Ｇｒｉ
ｄ Ａｒｒａｙ）が開発されている。ＰＧＡは挿入実装
型ＩＣパッケージでは、唯−多ビン化に対応したもので
あり、ＩＣパッケージの中でも最多ビン数を誇っている
。当初はセラミックＰＧＡが開発されたが、セラミック
パッケージのデメリットであるコスト面の対策として、
ＰＰＧＡが開発されている。Conventionally, LSI (Large 5cale Int
egration) package; f, DI
This originally meant an insertion type package such as Dual Inline Package (P), but market needs for a package suitable for high-density packaging and LSI
PPGA (Plastic Pin Gri) is one of the LSI packages suitable for high-density mounting at manufacturers.
d Array) has been developed. PGA is the only insert-mounted IC package that supports multiple bins, and boasts the largest number of bins among all IC packages. Initially, ceramic PGA was developed, but as a countermeasure for cost, which was a disadvantage of ceramic packages,
PPGA has been developed.
ＰＰＧＡの形状は、現在、第４図及び第５図に示すよう
に、キャップ構造が主流を占めている。Currently, the predominant shape of PPGA is a cap structure, as shown in FIGS. 4 and 5.
基本的な構造としては、プリント基板ｌ上に接着剤２（
導電性ペースト、絶縁性ペースト）を用いて、ＩＣチッ
プ（半導体チップ）３をマウントし、Ａｕ線４を用いて
リードとの配線を行う、その後にチップコーティング剤
５によりＩＣチップ３をコーティングする。更に、アル
ミキャップ６を設置することにより完了する。この際、
第４図に示すように、アルミキャップ６をガラスクロス
に樹脂を含浸させたベレット状の接着剤７を用いて固定
する方法と、第５図に示すように、アルミキャップ６内
に封止樹脂９を十分に充填した後、固定する方法がある
。The basic structure consists of adhesive 2 (
An IC chip (semiconductor chip) 3 is mounted using a conductive paste or an insulating paste, and wiring with leads is performed using an Au wire 4. Thereafter, the IC chip 3 is coated with a chip coating agent 5. Furthermore, the process is completed by installing the aluminum cap 6. On this occasion,
As shown in FIG. 4, the aluminum cap 6 is fixed using a pellet-shaped adhesive 7 made of glass cloth impregnated with resin, and as shown in FIG. There is a method of fixing the container after filling it sufficiently.
（発明が解決しようとする課Ｂ）
しかしながら、上記従来の樹脂封止型半導体装置では、
プリント基板１とアルミキャップ６間の接着不良、例え
ば、濡れ不良等によりグロスリークが発生すること、半
田処理時に内部の水分の気化膨張に伴うバンク等の問題
が上げられる。これにより信鯨性の面でも満足された製
品が得られなかった。(Problem B to be solved by the invention) However, in the above-mentioned conventional resin-sealed semiconductor device,
There are problems such as gross leakage due to poor adhesion between the printed circuit board 1 and the aluminum cap 6, such as poor wetting, and banks due to vaporization and expansion of internal moisture during soldering. As a result, it was not possible to obtain a product that was satisfactory in terms of reliability.
本発明は、以上述べたプリント基板とアルミキャップ間
の接着不良の問題点を餘去し、アルミキャップ上に凸部
を形成し、該凸部に樹脂注入口及びエアーベントを形成
し、プリント基板とアルミキャップ間は紫外線硬化型の
エポキシ接着剤を用いて仮接着を行い、更に、前記樹脂
注入口より、強制的に樹脂を充填することにより、信転
性の高い樹脂封止型半導体装置及びその製造方法を提供
することを目的とする。The present invention eliminates the problem of poor adhesion between the printed circuit board and the aluminum cap described above, forms a convex part on the aluminum cap, forms a resin injection port and an air vent in the convex part, and Temporary bonding is performed between the aluminum cap and the aluminum cap using an ultraviolet curable epoxy adhesive, and the resin is forcibly filled from the resin injection port to create a resin-sealed semiconductor device with high reliability. The purpose is to provide a manufacturing method thereof.
（課題を解決するための手段）
本発明は、半導体チップを樹脂封止してなる半導体装置
において、半導体チップが実装される基板と、該基板を
覆うように装着されるキャップと、該キャップの周縁部
に形成される紫外線硬化型樹脂溜めと、前記キャップの
中央部に形成される凸部と、該凸部に樹脂充填口及びエ
アーベントとを設け、前記紫外線硬化型樹脂により前記
基板とキャップとを仮接着させ、前記樹脂充填口よりフ
ィラーを含有したエポキシ樹脂を充填するようにしたも
のである。(Means for Solving the Problems) The present invention provides a semiconductor device in which a semiconductor chip is sealed with resin, which includes a substrate on which the semiconductor chip is mounted, a cap attached to cover the substrate, and a cap attached to the cap. An ultraviolet curable resin reservoir formed on the periphery, a convex portion formed in the center of the cap, and a resin filling port and an air vent provided in the convex portion, and the ultraviolet curable resin connects the substrate and the cap. and are temporarily bonded together, and an epoxy resin containing a filler is filled through the resin filling port.
また、樹脂封止型半導体装置の製造方法において、半導
体チップが実装される基板を覆うように装着されるキャ
ップの周縁部に形成される紫外線硬化型樹脂溜めに紫外
線硬化型のエポキシ樹脂を充填し、前記基板とキャップ
を紫外線で仮接着させ、前記キャップの中央部に樹脂充
填口及びエアーベントが形成され、該エアーベントより
強制脱気を行いながら、前記樹脂充填口よりフィラーを
含有したエポキシ樹脂を強制充填するようにしたもので
ある。In addition, in a method of manufacturing a resin-sealed semiconductor device, an ultraviolet-curable epoxy resin is filled into an ultraviolet-curable resin reservoir formed at the periphery of a cap that is attached to cover a substrate on which a semiconductor chip is mounted. , the substrate and the cap are temporarily bonded with ultraviolet rays, a resin filling port and an air vent are formed in the center of the cap, and while forced degassing is performed through the air vent, the epoxy resin containing filler is released from the resin filling port. It is designed to forcibly fill the tank.
（作用）
本発明によれば、上記したように、キャップの中央部に
は凸部を形成し、該凸部に樹脂充填口とエアーベントと
を設ける。一方、紫外線硬化型のエポキシ樹脂を用いて
、プリント基板とアルミキ中ツブを接着させる。そこで
、アルミキャップに設けた樹脂充填口よりフィラー（Ｓ
ｔｏｗ）が含有されているエポキシ樹脂を充填する。(Function) According to the present invention, as described above, a convex portion is formed in the center of the cap, and a resin filling port and an air vent are provided in the convex portion. Meanwhile, the printed circuit board and the aluminum core are bonded together using an ultraviolet-curable epoxy resin. Therefore, filler (S) was added from the resin filling port provided in the aluminum cap.
Fill with epoxy resin containing tow).
（実施例）
以下、本発明の実施例について図面を参照しながら詳細
に説明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
第１図は本発明の実施例を示す樹脂封止型半導体装置の
断面図、第２図はその樹脂封止型半導体装置の平面図で
ある。FIG. 1 is a sectional view of a resin-sealed semiconductor device showing an embodiment of the present invention, and FIG. 2 is a plan view of the resin-sealed semiconductor device.
これらの図に示すように、プリント基板１１上に接着剤
（導電性ペースト或いは絶縁性ペースト）１２を用いて
、ＩＣチップ（半導体チップＨ３をマウントし、Ａｕ線
１４を用いてリードとの配線を行う、その後にダム１５
が形成された部分にチップコーティング１Ｆ１１６によ
りＩＣチップ１３をコーティングする。As shown in these figures, an IC chip (semiconductor chip H3) is mounted on a printed circuit board 11 using an adhesive (conductive paste or insulating paste) 12, and wiring with the leads is connected using an Au wire 14. do, then dam 15
The IC chip 13 is coated with chip coating 1F116 on the portion where is formed.
一方、このプリント基板１１を覆うように、アルミキャ
ップ２０を装着する。このアルミキャップ２０には側壁
２１から所定の距離をおいて仕切片２２を垂下して紫外
線硬化型樹脂溜め２６を形成すると共に、中央部には凸
部２３を形成し、その凸部２３に封止樹脂充填口２４及
びエアーベント２５が設けられている。On the other hand, an aluminum cap 20 is attached to cover the printed circuit board 11. This aluminum cap 20 has a partition piece 22 hanging down from the side wall 21 at a predetermined distance to form an ultraviolet curing resin reservoir 26, and a convex part 23 is formed in the center, and a seal is formed in the convex part 23. A stopper resin filling port 24 and an air vent 25 are provided.
そのアルミキャップ２０内には封止樹脂充填口２４から
封止樹脂が充填される。The aluminum cap 20 is filled with sealing resin from the sealing resin filling port 24 .
次に、第３図は本発明の実施例を示す樹脂封止型半導体
装置の製造工程断面図である。Next, FIG. 3 is a sectional view showing the manufacturing process of a resin-sealed semiconductor device according to an embodiment of the present invention.
まず、第３図（ａ）に示すように、アルミキャップ２０
を裏返しにして、アルミキャップ２０の両側壁２１と仕
切片２２間に形成される紫外線硬化型樹脂溜め２６にシ
リンジ２８から紫外線硬化型のエポキシ樹脂を供給して
塗布する。First, as shown in FIG. 3(a), the aluminum cap 20
is turned over, and an ultraviolet curable epoxy resin is supplied from a syringe 28 to the ultraviolet curable resin reservoir 26 formed between the side walls 21 of the aluminum cap 20 and the partition piece 22 to be coated.
次に、第３図（ｂ）に示すように、ＩＣチップ１３が実
装されたプリント基板１１を裏返しにして、紫外線硬化
型のエポキシ樹脂によりプリント基板１１の周縁部とア
ルミキャン１２００周縁部とを仮接着させ、紫外線硬化
型のエポキシ樹脂部に紫外線を照射させ硬化させる。な
お、プリント基板１１は詳細には従来品と同様、プリン
ト基板ｌｌ上にＩＣチップ１３を接着剤（導電性接着剤
、絶縁性接着剤）を用いてマウントした後、Ａｕワイヤ
１４を用いて配線を行い、更に、エポキシ系のチンブコ
ート剤１６でシールされている。Next, as shown in FIG. 3(b), the printed circuit board 11 on which the IC chip 13 is mounted is turned over, and the peripheral edge of the printed circuit board 11 and the peripheral edge of the aluminum can 1200 are bonded with ultraviolet curing epoxy resin. After temporary adhesion, the UV-curable epoxy resin part is irradiated with UV light and cured. In detail, the printed circuit board 11 is similar to the conventional product, in which the IC chip 13 is mounted on the printed circuit board 11 using an adhesive (conductive adhesive, insulating adhesive), and then wiring is performed using the Au wire 14. This is followed by sealing with an epoxy coating agent 16.
次に、第３図（ｃ）に示すように、樹脂充填口２４より
、フィラー（ＳｉＯ２）が含有されているエポキシ樹脂
２７をシリンジ２８より供給し、そのエポキシ樹脂をキ
ャップ２０内に強制的に充填させ、硬化させた後、完了
とする。ここで、エポキシ樹脂２７内に含まれるフィラ
ー（ＳｉＯ８）はプリント基板１１の線膨張係数とエポ
キシ樹脂２７の線膨張係数とを合わせるために用いられ
る。Next, as shown in FIG. 3(c), the epoxy resin 27 containing the filler (SiO2) is supplied from the syringe 28 through the resin filling port 24, and the epoxy resin is forced into the cap 20. After filling and curing, it is completed. Here, the filler (SiO8) contained in the epoxy resin 27 is used to match the coefficient of linear expansion of the printed circuit board 11 and the coefficient of linear expansion of the epoxy resin 27.
ここで、エポキシ樹脂２７のキャップ２０内に強制的に
充填させ方法としては、２通りがある。Here, there are two methods for forcibly filling the epoxy resin 27 into the cap 20.
（１）流動性の小さいエポキシ樹脂の場合は、エアーベ
ントより強制脱気を行いながら、エポキシ樹脂を樹脂充
填口より充填する。(1) In the case of an epoxy resin with low fluidity, fill the epoxy resin from the resin filling port while performing forced degassing from the air vent.
このように構成すると、樹脂充填が円滑になると共に、
樹脂充填を迅速に行うことができる。With this configuration, resin filling becomes smooth, and
Resin filling can be done quickly.
（２）流動性の大きいエポキシ樹脂の場合は、エアーベ
ントより強制脱気を行った後に、エポキシ樹脂を樹脂充
填口より充填する。(2) In the case of an epoxy resin with high fluidity, after performing forced degassing from an air vent, fill the epoxy resin from the resin filling port.
このように構成すると、エポキシ樹脂内部にボイドを生
じることなく、樹脂充填を円滑に行うことができる。With this configuration, resin filling can be smoothly performed without creating voids inside the epoxy resin.
また、アルミキャップの中央部に凸部を形成するように
しているため、プリント基板とアルミキャップ接着面の
間に一定の隙間を設けることができ、強制的に樹脂を充
填することにより、両者間（樹脂とプリント基板、樹脂
とアルミキャップ）の濡れ性を向上させることが可能で
あり、加えて接着性を向上させることが可能である。In addition, since a convex part is formed in the center of the aluminum cap, it is possible to create a certain gap between the printed circuit board and the adhesive surface of the aluminum cap, and by forcibly filling the resin, it is possible to create a gap between the two. It is possible to improve the wettability of (resin and printed circuit board, resin and aluminum cap), and in addition, it is possible to improve adhesiveness.
更に、プリント基板とアルミキャップを紫外線硬化型の
エポキシ樹脂を用いて仮接着を行うことにより、エポキ
シ樹脂を強制充填させても、樹脂漏れ等の問題を防止す
ることができる。Furthermore, by temporarily bonding the printed circuit board and the aluminum cap using an ultraviolet-curable epoxy resin, problems such as resin leakage can be prevented even if the epoxy resin is forcibly filled.
なお、本発明は上記実施例に限定されるものではなく、
本発明の趣旨に基づいて種々の変形が可能であり、これ
らを本発明の範囲から排除するものではない。Note that the present invention is not limited to the above embodiments,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
（発明の効果）
以上、詳細に説明したように、本発明によれば、次のよ
うな効果を奏することができる。(Effects of the Invention) As described above in detail, according to the present invention, the following effects can be achieved.
アルミキャップの中央部に凸部を形成し、該凸部に樹脂
充填口及びエアーベントを設ける。一方、紫外線硬化型
のエポキシ樹脂によりプリント基板とアルミキャップの
周縁部を仮接着させ、アルミキャップ上の樹脂充填口か
らフィラーを含有したエポキシ樹脂を充填するようにし
たので、（１）プリント基板とアルミキャップの接着性
の向上を図ることができる。A convex portion is formed in the center of the aluminum cap, and a resin filling port and an air vent are provided in the convex portion. On the other hand, we temporarily bonded the printed circuit board and the peripheral edge of the aluminum cap with UV-curable epoxy resin, and filled the epoxy resin containing filler from the resin filling port on the aluminum cap. It is possible to improve the adhesion of the aluminum cap.
（２）生産性の向上を図ることができる。(2) Productivity can be improved.
（３）未充填部を除去することができる。(3) Unfilled portions can be removed.
（４）耐ヒートサイクル性の向上を図ることができる。(4) Heat cycle resistance can be improved.
（５）耐湿性の向上を図ることができる。(5) Moisture resistance can be improved.
第１図は本発明の実施例を示す樹脂封止型半導体装置の
断面図、第２図はその樹脂封止型半導体装置の平面図、
第３図は本発明の実施例を示す樹脂封止型半導体装置の
製造工程断面図、第４図は従来の樹脂封止型半導体装置
の断面図、第５図は従来の他の樹脂封止型半導体装置の
断面図である。
１１・・・プリント基板、１２・・・接着剤、１３・・
・ＩＣチップ、１４・・・Ａｕ線、１５・・・ダム、１
６・・・チップコーティング剤、２０・・・アルミキャ
ップ、２１・・・側壁、２２・・・仕切片、２３・・・
凸部、２４・・・封止樹脂充填口、２５・・・エアーベ
ント、２６・・・紫外線硬化型樹脂溜め、２７・・・フ
ィラー含有エポキシ樹脂、２８・・・シリンジ。
特許出願人 沖電気工業株式会社
代理人 弁理士 清 水 守（外２名）／１
本発明の樹陥封止型革傳体表慣の断薗起第１図
第２図
第３図FIG. 1 is a sectional view of a resin-sealed semiconductor device showing an embodiment of the present invention, and FIG. 2 is a plan view of the resin-sealed semiconductor device.
FIG. 3 is a sectional view of the manufacturing process of a resin-sealed semiconductor device showing an embodiment of the present invention, FIG. 4 is a sectional view of a conventional resin-sealed semiconductor device, and FIG. 5 is a sectional view of another conventional resin-sealed semiconductor device. 1 is a cross-sectional view of a type semiconductor device. 11... Printed circuit board, 12... Adhesive, 13...
・IC chip, 14...Au wire, 15...dam, 1
6... Chip coating agent, 20... Aluminum cap, 21... Side wall, 22... Partition piece, 23...
Convex portion, 24... Sealing resin filling port, 25... Air vent, 26... Ultraviolet curing resin reservoir, 27... Filler-containing epoxy resin, 28... Syringe. Patent Applicant Oki Electric Industry Co., Ltd. Agent Patent Attorney Mamoru Shimizu (2 others)
Claims (3)
いて、 （ａ）半導体チップが実装される基板と、 （ｂ）該基板を覆うように装着されるキャップと、（ｃ
）該キャップの周縁部に形成される紫外線硬化型樹脂溜
めと、 （ｄ）前記キャップの中央部に形成される凸部と、（ｅ
）該凸部に樹脂充填口及びエアーベントとを設け、 （ｆ）前記紫外線硬化型樹脂により前記基板とキャップ
とを仮接着させ、前記樹脂充填口よりフィラーを含有し
たエポキシ樹脂を充填してなる樹脂封止型半導体装置。(1) In a semiconductor device formed by resin-sealing a semiconductor chip, (a) a substrate on which the semiconductor chip is mounted, (b) a cap attached to cover the substrate, (c)
) an ultraviolet curable resin reservoir formed on the peripheral edge of the cap; (d) a convex portion formed in the center of the cap;
) A resin filling port and an air vent are provided in the convex portion; (f) the substrate and the cap are temporarily bonded using the ultraviolet curable resin, and an epoxy resin containing a filler is filled through the resin filling port. Resin-sealed semiconductor device.
）半導体チップが実装される基板を覆うように装着され
るキャップの周縁部に形成される紫外線硬化型樹脂溜め
に紫外線硬化型のエポキシ樹脂を充填し、 （ｂ）前記基板とキャップを紫外線で仮接着させ、（ｃ
）前記キャップの中央部に樹脂充填口及びエアーベント
が形成され、該エアーベントより強制脱気を行いながら
、前記樹脂充填口よりフィラーを含有した流動性の小さ
いエポキシ樹脂を強制充填することを特徴とする樹脂封
止型半導体装置の製造方法。(2) In the method of manufacturing a resin-sealed semiconductor device, (a
) A UV-curable epoxy resin is filled into an ultraviolet-curable resin reservoir formed at the periphery of the cap that is attached to cover the substrate on which the semiconductor chip is mounted, and (b) the substrate and cap are temporarily heated with ultraviolet light. Glue (c
) A resin filling port and an air vent are formed in the center of the cap, and while forced degassing is performed through the air vent, an epoxy resin containing filler with low fluidity is forcibly filled through the resin filling port. A method for manufacturing a resin-sealed semiconductor device.
）半導体チップが実装される基板を覆うように装着され
るキャップの周縁部に形成される紫外線硬化型樹脂溜め
に紫外線硬化型のエポキシ樹脂を充填し、 （ｂ）前記基板とキャップを紫外線で仮接着させ、（ｃ
）前記キャップの中央部に樹脂充填口及びエアーベント
が形成され、該エアーベントより強制脱気を行い、 （ｄ）前記樹脂充填口よりフィラーを含有した流動性の
大きいエポキシ樹脂を強制充填することを特徴とする樹
脂封止型半導体装置の製造方法。(3) In the method for manufacturing a resin-sealed semiconductor device, (a
) A UV-curable epoxy resin is filled into an ultraviolet-curable resin reservoir formed at the periphery of the cap that is attached to cover the substrate on which the semiconductor chip is mounted, and (b) the substrate and cap are temporarily heated with ultraviolet light. Glue (c
) A resin filling port and an air vent are formed in the center of the cap, and forced deaeration is performed through the air vent; (d) A highly fluid epoxy resin containing filler is forcibly filled through the resin filling port. A method for manufacturing a resin-sealed semiconductor device, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28193890A JPH04157757A (en) | 1990-10-22 | 1990-10-22 | Resin-sealed semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28193890A JPH04157757A (en) | 1990-10-22 | 1990-10-22 | Resin-sealed semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04157757A true JPH04157757A (en) | 1992-05-29 |
Family
ID=17646015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28193890A Pending JPH04157757A (en) | 1990-10-22 | 1990-10-22 | Resin-sealed semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04157757A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL1005780C2 (en) * | 1997-04-09 | 1998-10-12 | Fico Bv | Method and cover element for encapsulating electronic components. |
| US6165816A (en) * | 1996-06-13 | 2000-12-26 | Nikko Company | Fabrication of electronic components having a hollow package structure with a ceramic lid |
| US6341413B1 (en) | 1995-07-18 | 2002-01-29 | Omron Corporation | Method of making electronic equipment |
| US6531770B2 (en) * | 2000-11-28 | 2003-03-11 | Kabushiki Kaisha Toshiba | Electronic part unit attached to a circuit board and including a cover member covering the electronic part |
| JP2013183054A (en) * | 2012-03-02 | 2013-09-12 | Renesas Electronics Corp | Manufacturing method of semiconductor device and semiconductor device |
-
1990
- 1990-10-22 JP JP28193890A patent/JPH04157757A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6341413B1 (en) | 1995-07-18 | 2002-01-29 | Omron Corporation | Method of making electronic equipment |
| US6165816A (en) * | 1996-06-13 | 2000-12-26 | Nikko Company | Fabrication of electronic components having a hollow package structure with a ceramic lid |
| NL1005780C2 (en) * | 1997-04-09 | 1998-10-12 | Fico Bv | Method and cover element for encapsulating electronic components. |
| WO1998045878A1 (en) * | 1997-04-09 | 1998-10-15 | Fico B.V. | Method and covering element for encapsulating electronic components |
| US6531770B2 (en) * | 2000-11-28 | 2003-03-11 | Kabushiki Kaisha Toshiba | Electronic part unit attached to a circuit board and including a cover member covering the electronic part |
| JP2013183054A (en) * | 2012-03-02 | 2013-09-12 | Renesas Electronics Corp | Manufacturing method of semiconductor device and semiconductor device |
| US8841166B2 (en) | 2012-03-02 | 2014-09-23 | Renesas Electronics Corporation | Manufacturing method of semiconductor device, and semiconductor device |
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