JPH04152688A - Magnetoresistance element - Google Patents
Magnetoresistance elementInfo
- Publication number
- JPH04152688A JPH04152688A JP2278214A JP27821490A JPH04152688A JP H04152688 A JPH04152688 A JP H04152688A JP 2278214 A JP2278214 A JP 2278214A JP 27821490 A JP27821490 A JP 27821490A JP H04152688 A JPH04152688 A JP H04152688A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnet
- thin film
- magnetic field
- ferromagnetic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 22
- 230000005291 magnetic effect Effects 0.000 claims abstract description 22
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 6
- 238000007639 printing Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 239000000696 magnetic material Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 9
- 239000000956 alloy Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000005415 magnetization Effects 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
バーバーポール型の磁気抵抗素子に関し、小型化と製造
収率を向上することを目的とし、強磁性薄膜抵抗素子の
裏面にバイアス磁界発生用の永久磁石を装着してなるバ
ーバーポール型の磁気抵抗素子において、該磁界発生用
の磁石として磁性材料粉末を主成分とするペーストを印
刷焼成した後、着磁した膜磁石を用いてなることを特徴
として磁気抵抗素子を構成する。[Detailed Description of the Invention] [Summary] A permanent magnet for generating a bias magnetic field is attached to the back surface of a ferromagnetic thin film resistance element for the purpose of miniaturization and improvement of manufacturing yield regarding a barber pole type magnetoresistive element. A barber-pole type magnetoresistive element comprising: a film magnet magnetized after printing and firing a paste containing magnetic material powder as a main component as a magnet for generating the magnetic field; Configure.
本発明は磁気抵抗素子の小型化に関する。 The present invention relates to miniaturization of magnetoresistive elements.
磁気抵抗素子は磁気センサとして以前より使用されてい
るが、最近はマイクロエレクトロニックス技術が進み、
小型で高感度のバーバーポール型の素子が実用化されて
いる。Magnetoresistive elements have been used as magnetic sensors for some time, but recently, with advances in microelectronics technology,
A small and highly sensitive barber pole type element has been put into practical use.
本発明は更にこれを小型化した磁気抵抗素子に関するも
のである。The present invention further relates to a magnetoresistive element that is miniaturized.
磁気抵抗素子（Ｍａｇｎｅｔ Ｒｅｇｉｓｔｉｖｅ Ｅ
ｌｅｍｅｎｔ 略称ＭＲ素子）は磁界によって電気抵
抗が変化する磁気抵抗効果を利用する素子であり、強磁
性体では自発磁化の方向の変化により抵抗が変化するの
を利用している。Magnet Resistive Element
An MR element (abbreviated as MR element) is an element that utilizes the magnetoresistive effect in which electrical resistance changes depending on a magnetic field, and utilizes the fact that in a ferromagnetic material, resistance changes due to a change in the direction of spontaneous magnetization.
第２図は従来のバーバーポール型磁気抵抗素子の草面図
、また第３図はこの原理図である。FIG. 2 is a plan view of a conventional barber pole type magnetoresistive element, and FIG. 3 is a diagram of its principle.
すなわち、強磁性体たとえばパーマロイにッケル・鉄、
Ｎｉ−Ｆｅ合金）をスパッタ法などによりガラス基板
やシリコン（Ｓｉ）基板上に膜形成して細長い薄膜抵抗
体ｌを形成すると、形状磁気異方性により自発磁化の方
向２は薄膜抵抗体１の長手方向に揃っている。That is, ferromagnetic materials such as permalloy, nickel iron,
When an elongated thin film resistor l is formed by forming a film of Ni-Fe alloy) on a glass substrate or silicon (Si) substrate by sputtering or the like, the direction of spontaneous magnetization 2 is the same as that of the thin film resistor 1 due to shape magnetic anisotropy. Aligned in the longitudinal direction.
然し、この素子の長手方向とは直角に磁界３を加えると
、磁界３の大きさに比例して薄膜抵抗体ｌを構成してい
るドメインの磁化回転が生ずるために薄膜抵抗体１の抵
抗が変化する。However, when a magnetic field 3 is applied perpendicularly to the longitudinal direction of this element, the magnetization rotation of the domains constituting the thin film resistor 1 occurs in proportion to the magnitude of the magnetic field 3, so that the resistance of the thin film resistor 1 decreases. Change.
そこで、薄膜抵抗体ｌに定電流を通じておき、この抵抗
変化を検出するのが磁気抵抗素子である。Therefore, a magnetoresistive element is used to pass a constant current through the thin film resistor l and detect this change in resistance.
然し、この場合の抵抗変化は磁界の印加方向には依存し
ないために、これを改良し、正より負の成る磁界範囲に
おいて抵抗変化が直線的に生ずるように改良したのがバ
ーバーポール型の磁気抵抗素子であって、第３図に示す
ように薄膜抵抗体１の上に金（Ａｕ）などの金属よりな
るバーバーポール状の金属パターン４を形成し、電流の
伝導方向を変えている。However, since the resistance change in this case does not depend on the direction of the applied magnetic field, barber pole type magnetism has been improved so that the resistance change occurs linearly in the magnetic field range from positive to negative. As shown in FIG. 3, the resistance element is a barber pole-shaped metal pattern 4 made of metal such as gold (Au) formed on a thin film resistor 1 to change the direction of current conduction.
このようにして強磁性薄膜抵抗素子５を形成した後、更
に磁界の変動による不安定性を無くするために、バイア
ス磁界発生機構として、第２図に示すように、この素子
５の背後で素子５の自発磁化の方向（長手方向）と磁界
の方向が平行となるように永久磁石６を配置してバイア
ス磁界を与えている。After forming the ferromagnetic thin film resistive element 5 in this manner, in order to further eliminate instability due to fluctuations in the magnetic field, a bias magnetic field generating mechanism is installed behind the element 5 as shown in FIG. A bias magnetic field is applied by arranging the permanent magnets 6 so that the direction of spontaneous magnetization (longitudinal direction) and the direction of the magnetic field are parallel to each other.
なお、第２図には強磁性薄膜抵抗素子５を回路接続する
ためのリードフレーム７とボンディングワイヤ８との関
係を示している。Incidentally, FIG. 2 shows the relationship between the lead frame 7 and the bonding wire 8 for connecting the ferromagnetic thin film resistance element 5 to a circuit.
こ＼で、永久磁石６は強磁性薄膜抵抗素子５に較べると
大きく、そのため小型化の障害となっていた。Here, the permanent magnet 6 is larger than the ferromagnetic thin film resistance element 5, which has been an obstacle to miniaturization.
感度と安定性の優れた磁気抵抗素子としてバイアス磁界
発生用の永久磁石を備えたパーツく−ボール型磁気抵抗
素子が使用されている。As a magnetoresistive element with excellent sensitivity and stability, a part-ball type magnetoresistive element equipped with a permanent magnet for generating a bias magnetic field is used.
然し、この強磁性薄膜抵抗素子の背後に設けられる永久
磁石は素子本体に較べると大きく、そのため小型化を阻
んでいる。However, the permanent magnet provided behind this ferromagnetic thin film resistance element is larger than the element itself, which hinders miniaturization.
また薄膜抵抗体の自発磁化の方向に一致させて永久磁石
を配置する必要があるが、位置合わせを精度よく行うこ
とは容易ではない。Furthermore, it is necessary to arrange the permanent magnets so as to match the direction of spontaneous magnetization of the thin film resistor, but it is not easy to precisely align the magnets.
これらのことから、永久磁石を小型化して作業性を向上
することが課題である。For these reasons, the challenge is to reduce the size of permanent magnets and improve workability.
上記の課題は強磁性薄膜抵抗素子の裏面にバイアス磁界
発生用の磁石を装着してなるバーバーポール型の磁気抵
抗素子において、磁界発生用の磁石として磁性材料粉末
を主成分とするペーストを印刷焼成した後、着磁した膜
磁石を用いてなることを特徴として磁気抵抗素子を構成
することにより解決することができる。The above problem is solved by printing and firing a paste mainly composed of magnetic material powder as a magnet for generating a magnetic field in a barber pole type magnetoresistive element in which a magnet for generating a bias magnetic field is attached to the back side of a ferromagnetic thin film resistance element. This problem can be solved by constructing a magnetoresistive element characterized by using a magnetized film magnet.
本発明は永久磁石として、厚膜技術を用いて形成した膜
磁石を使用するものである。The present invention uses a film magnet formed using thick film technology as a permanent magnet.
このようにすると、通常用いられているフェライト磁石
などに較べてはるかに薄くなり、また印刷法によって形
成されるために強磁性薄膜抵抗素子の位置決めを精度よ
く行うことができる。In this way, the ferromagnetic thin film resistance element can be positioned with high precision because it is much thinner than a commonly used ferrite magnet, and because it is formed by a printing method.
磁性粉として平均粒径が１μｍのサマリウム・コバルト
（Ｓｍ−Ｃｏ）合金粉末を用い、次のようにして厚膜ペ
ーストを作った。A thick film paste was made in the following manner using samarium-cobalt (Sm-Co) alloy powder with an average particle size of 1 μm as the magnetic powder.
Ｓｍ−Ｃｏ粉末 ・・・１００重量
部ポリメチルメタアクリレート（略称ＰＭＭＡ）（バイ
ンダ）・・・ ３重量部
テルピネオール（溶剤） ・・・ １０ 〃メ
チルエチルケトン（溶剤） ・・・１００〃を混合し
、ボールミルを用いて２４時間に亙って混練して厚膜ペ
ーストを作った。Sm-Co powder...100 parts by weight Polymethyl methacrylate (PMMA) (binder)...3 parts by weight Terpineol (solvent)...10 Methyl ethyl ketone (solvent)...100 were mixed and milled in a ball mill. A thick film paste was made by kneading for 24 hours.
このペーストを用い、スクリーンプリント法を用い、第
１図に示すように銅（Ｃｕ）合金よりなり厚さが２５０
μｍのチップ載置用のリードフレーム７の上に印刷し、
乾燥した後、窒素（Ｎ２）気流中で６４０℃、６０分の
条件で焼成して３Ｘ３ｍｍで厚さが１０μｍの合金膜を
作り、これにＩＯＫガウスの磁界を与えて強磁性薄膜抵
抗素子のバイアス印加方向に着磁し、膜磁石１０とした
。（以上同図Ａ）次に、この膜磁石ＩＯの上に従来の方
法でＳｉチップ上に形成しである２画角の強磁性薄膜抵
抗素子５を接着剤を用いて搭載し、強磁性薄膜抵抗素子
５の入出力端子とリードフレーム７とをボンディングワ
イヤ８で接続した。Using this paste and using the screen printing method, as shown in Figure 1, a copper (Cu) alloy with a thickness of 250mm
Printed on the lead frame 7 for mounting micrometer chips,
After drying, the alloy film is baked at 640°C for 60 minutes in a nitrogen (N2) stream to form a 3x3mm alloy film with a thickness of 10μm.A magnetic field of IOK Gauss is applied to this to bias the ferromagnetic thin film resistance element. It was magnetized in the direction of application to form a film magnet 10. (A in the same figure) Next, on this film magnet IO, a ferromagnetic thin film resistance element 5 formed on a Si chip using a conventional method and having two angles of view is mounted using adhesive. The input/output terminals of the resistive element 5 and the lead frame 7 were connected with bonding wires 8.
そして、これを樹脂モールドすることで本発明に係る磁
気抵抗素子が完成した。Then, by resin molding this, a magnetoresistive element according to the present invention was completed.
か−る磁気抵抗素子の最大の抵抗変化率は２％であり、
バイアス発生用として永久磁石を用いたものと同じ特性
を示した。The maximum resistance change rate of such a magnetoresistive element is 2%,
It exhibited the same characteristics as those using permanent magnets for bias generation.
具体的には西端子ブリッジ型の構成において、入力端子
間に５ ｍＡの電流を通じである場合に６００ｅの磁界
を抵抗素子の長手方向に対して直角に加えた場合、出力
端子間に４０ ｍＶの出力を得ることができた。Specifically, in a west terminal bridge type configuration, when a 5 mA current is passed between the input terminals and a 600 e magnetic field is applied perpendicular to the longitudinal direction of the resistor element, a 40 mV voltage is generated between the output terminals. I was able to get the output.
永久磁石を膜磁石に換える本発明の実施により、磁気抵
抗素子が小型化すると共に強磁性薄膜抵抗素子の位置決
めが容易になり、これにより製造収率の向上が可能にな
る。By implementing the present invention by replacing permanent magnets with film magnets, the magnetoresistive element becomes smaller and the positioning of the ferromagnetic thin film resistance element becomes easier, thereby making it possible to improve the manufacturing yield.
第１図は本発明に係る磁気抵抗素子の工程を示す断面図
、
第２図は従来の磁気抵抗素子の断面図、第３図はバーバ
ーポール型磁気抵抗素子の原理図、
である。
図において、
１は薄膜抵抗体、 ２は自発磁化の方向、５は強
磁性薄膜抵抗素子、６は永久磁石、ｌＯは膜磁石、
である。FIG. 1 is a sectional view showing the process of manufacturing a magnetoresistive element according to the present invention, FIG. 2 is a sectional view of a conventional magnetoresistive element, and FIG. 3 is a principle diagram of a barber pole type magnetoresistive element. In the figure, 1 is a thin film resistor, 2 is a direction of spontaneous magnetization, 5 is a ferromagnetic thin film resistance element, 6 is a permanent magnet, and IO is a film magnet.
Claims (1)
磁石を装着してなるバーバーポール型の磁気抵抗素子に
おいて、 該磁界発生用の磁石として磁性材料粉末を主成分とする
ペーストを印刷焼成した後、着磁した膜磁石を用いてな
ることを特徴とする磁気抵抗素子。[Scope of Claims] A barber pole type magnetic resistance element comprising a permanent magnet for generating a bias magnetic field attached to the back surface of a ferromagnetic thin film resistance element, wherein the magnet for generating the magnetic field has a magnetic material powder as a main component. A magnetoresistive element characterized by using a film magnet magnetized after printing and firing a paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2278214A JPH04152688A (en) | 1990-10-17 | 1990-10-17 | Magnetoresistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2278214A JPH04152688A (en) | 1990-10-17 | 1990-10-17 | Magnetoresistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04152688A true JPH04152688A (en) | 1992-05-26 |
Family
ID=17594194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2278214A Pending JPH04152688A (en) | 1990-10-17 | 1990-10-17 | Magnetoresistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04152688A (en) |
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-
1990
- 1990-10-17 JP JP2278214A patent/JPH04152688A/en active Pending
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