JPH04151837A - Etching equipment - Google Patents

Etching equipment

Info

Publication number
JPH04151837A
JPH04151837A JP2275186A JP27518690A JPH04151837A JP H04151837 A JPH04151837 A JP H04151837A JP 2275186 A JP2275186 A JP 2275186A JP 27518690 A JP27518690 A JP 27518690A JP H04151837 A JPH04151837 A JP H04151837A
Authority
JP
Japan
Prior art keywords
wafer
rollers
main
casing
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2275186A
Other languages
Japanese (ja)
Other versions
JPH0785471B2 (en
Inventor
Tatsuo Enomoto
辰男 榎本
Michito Satou
三千登 佐藤
Shigechika Nezu
茂義 祢津
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP27518690A priority Critical patent/JPH0785471B2/en
Priority to EP91309478A priority patent/EP0481723B1/en
Priority to DE69108838T priority patent/DE69108838T2/en
Priority to US07/776,787 priority patent/US5211794A/en
Publication of JPH04151837A publication Critical patent/JPH04151837A/en
Publication of JPH0785471B2 publication Critical patent/JPH0785471B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67075Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

PURPOSE:To minimize the damage on a wafer and realize uniform etching, by arranging auxiliary rollers between main rollers and between the main roller and a pressing member, so as to be in parallel with each other and able to freely rotate. CONSTITUTION:Between main rollers A, B in a casing 1, between the main roller B and a retaining member 7, and between the retaining member 7 and the main roller A, the respective auxiliary rollers a-c are arranged so as to be in parallel with the main rollers A, B, and the retaining member 7 and able to freely rotated. As a result, at whatever angle position the orientation flat Wa of a wafer W may be situated, at least two points of the outer periphery of the wafer are retained by the main rollers A, B and/or the auxiliary rollers a-c. Thereby the movement of the wafer W in radial direction is blocked, so that the damage of the outer periphery of the wafer can be minimized. In addition, rotation irregularity of the wafer W can be prevented, and uniform etching is enabled.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、複数のウェーハを支持した状態でこれらをエ
ツチング液に浸漬して該ウェーハ表面をエツチング処理
するためのエツチング装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an etching apparatus for etching the surfaces of a plurality of wafers by immersing them in an etching solution while supporting the wafers.

(従来の技術) 半導体デバイスの基板として用いられる半導体ウェーハ
は、例えばシリコン等の単結晶インゴットをその棒軸方
向に略直角にスライスし、スライスして得られたものに
対してラッピング、エツチング、ポリッシング等の処理
を施すことによって得られる。
(Prior Art) Semiconductor wafers used as substrates for semiconductor devices are manufactured by slicing a single crystal ingot of silicon or the like at approximately right angles to the axis of the ingot, and then lapping, etching, and polishing the slices. It can be obtained by performing the following processing.

ところで、半導体ウェーへのエツチング処理はエツチン
グ装置によってなされるか、エツチング装置はウェーハ
を支持すべき係合溝を軸方向に複数形成して成る少なく
とも2本のメインローラと、同様の係合溝を軸方向に複
数形成して成る押え部材をドラム枠状のケーシング内に
互いに平行、且つ回転自在に配するとともに、前記メイ
ンローラを回転駆動する駆動機構を設けて構成される。
By the way, the etching process on the semiconductor wafer is performed by an etching device, or the etching device has at least two main rollers formed with a plurality of engagement grooves in the axial direction to support the wafer, and a plurality of engagement grooves formed in the same direction. A plurality of holding members formed in the axial direction are disposed in a drum frame-shaped casing parallel to each other and rotatable, and a drive mechanism is provided to rotationally drive the main roller.

而して、上記エツチング装置のメインローラと押え部材
に形成された各係合溝に1枚のウェーハを係合させてこ
れを垂直に支持することによってケーシングに多数のウ
ェーハを適当な間隔をあけて長さ方向に整然と支持せし
め、ケーシングをウェーハと共に槽内のエツチング液中
に浸漬させる。このとき、駆動機構によってメインロー
ラを回転駆動すれば、メインローラに支持される全ウェ
ーハがエツチング液中で回転し、各ウェーハの表面は一
様にエツチングされる。
By engaging one wafer in each of the engagement grooves formed in the main roller and presser member of the etching device and supporting it vertically, a large number of wafers can be placed in the casing at appropriate intervals. The casing and the wafer are then immersed in the etching solution in the bath. At this time, if the main roller is rotationally driven by the drive mechanism, all the wafers supported by the main roller rotate in the etching solution, and the surface of each wafer is uniformly etched.

(発明が解決しようとする課題) ところて、一般に半導体ウェーハにはその外周の一部に
結晶方位を示すオリエンテーショフラット(以下、OF
と略称する)か形成されるか、斯かるOFか形成された
半導体ウェーハを従来のエツチング装置によってエツチ
ング処理する場合には次のような問題か生ずる。
(Problems to be Solved by the Invention) Generally speaking, semiconductor wafers have an orientation flat (hereinafter referred to as OF
When a semiconductor wafer having an OF formed thereon is etched using a conventional etching apparatus, the following problems occur.

即ち、半導体ウェーハのOF部かメインローラに当接す
る毎に半導体ウェーハかケーシング内て径方向に移動す
るため、ウェーハの外周部が衝撃によってダメージを受
けたり、或いはウェーハの回転にムラか生して不均一な
エツチングか行なわれ、ウェーハの歩留りが悪くなると
いう問題か発生する。
In other words, each time the OF part of the semiconductor wafer comes into contact with the main roller, the semiconductor wafer moves in the radial direction within the casing, so the outer circumference of the wafer may be damaged by the impact or the rotation of the wafer may be uneven. Non-uniform etching may occur, resulting in a problem of poor wafer yield.

本発明は上記問題に鑑みてなされたもので、その目的と
する処は、回転中のウェーハの径方向の移動を阻止して
該ウェーハが受けるダエージを最小限に抑えるとともに
、ウェーハの回転ムラを防いて均一なエツチングを可能
とするエツチング装置を提供することにある。
The present invention has been made in view of the above-mentioned problems, and its purpose is to prevent the radial movement of the wafer during rotation, thereby minimizing damage to the wafer, and to prevent uneven rotation of the wafer. An object of the present invention is to provide an etching device that can prevent the above-mentioned effects and enable uniform etching.

(課題を解決するための手段) 上記目的を達成すべく本発明は、ウェーハを支持すべき
保合溝な軸方向に複数形成して成る少なくとも2本のメ
インローラと、同様の係合溝を軸方向に複数形成して成
る押え部材を1〜ラム枠状のケーシング内に互いに平行
、且つ回転自在に配するとともに、前記メインローラを
回転駆動する駆動機構を含んで構成されるエツチング装
置において、前記ケーシング内の前記メインローラ聞及
び該メインローラと前記押え部材間の適当な角度位置に
前記駆動機構によって回転駆動される補助ローラを互い
に平行、且つ回転自在に配したことをその特徴とする。
(Means for Solving the Problems) In order to achieve the above object, the present invention provides at least two main rollers formed in plurality in the axial direction as retaining grooves for supporting the wafer, and a similar engaging groove. An etching device comprising a plurality of pressing members formed in the axial direction, arranged parallel to each other and rotatable in a ram frame-shaped casing, and including a drive mechanism for rotationally driving the main roller, The present invention is characterized in that auxiliary rollers rotationally driven by the drive mechanism are disposed in the casing between the main rollers and at appropriate angular positions between the main rollers and the pressing member so as to be parallel to each other and rotatable.

(作用) 本発明によれば、OFを有するウェーハであっても、O
Fがどの角度位置にあっても該ウェーハはその外周部の
少なくとも2点をメインローラ又は/及び補助ローラに
よって支持されるため。
(Function) According to the present invention, even if the wafer has OF,
This is because the wafer is supported at at least two points on its outer periphery by the main roller and/or the auxiliary roller, regardless of the angular position of F.

ウェーハの軸心は変化せず、該ウェーハの径方向の移動
か阻止されてその外周部がダメージを受けず、ウェーハ
の回転ムラか防がれて均一なエツチングが可能となる。
The axial center of the wafer does not change, the radial movement of the wafer is prevented, the outer circumference is not damaged, uneven rotation of the wafer is prevented, and uniform etching is possible.

(実施例) 以下に本発明の一実施例を添付図面に基づいて説明する
(Example) An example of the present invention will be described below based on the accompanying drawings.

第1図は本発明に係るエツチング装置のケーシングの縦
断面図、第2図は第1図の■−■線拡大断面図、第3図
は第1図の矢視■−■線方向の図、第4図は第3図のI
V−IV線断面図、第5図はエツチング装置の模式的平
面図である。
FIG. 1 is a longitudinal cross-sectional view of the casing of the etching apparatus according to the present invention, FIG. 2 is an enlarged cross-sectional view taken along the line ■-■ in FIG. 1, and FIG. 3 is a view taken in the direction of the arrow ■-■ in FIG. , Figure 4 is I of Figure 3.
A sectional view taken along the line V-IV, and FIG. 5 is a schematic plan view of the etching apparatus.

第1図に3いて、1はポリ塩化ビニール(PVC)製の
ケーシングであって、これは両端の側板2.2とこれら
側板2,2間に配される3枚の支持板3・・・を丸棒状
の3本の補強バー4・・・によって連結一体化して枠状
に成形されている。
In Fig. 1, reference numeral 3 denotes a casing made of polyvinyl chloride (PVC), which consists of side plates 2.2 at both ends and three support plates 3 disposed between these side plates 2, 2. are connected and integrated by three round reinforcing bars 4... to form a frame shape.

そして、上記ケーシングlの側板2,2と支持板3・・
・には2本のメインローラA、Bが互いに平行に、且つ
回転自在に挿通して支持されており、これらは第2図に
示すように水平面から角度α^、α8の位置に配されて
いる。これらメインローラA、Bの各々の外周にはリン
ク状の櫛歯5か軸方向に複数形成されており、これら複
数の櫛歯5・・・の間には後述のウェーハW(第2図参
照)の外周部か係合すべき係合溝6・・・が形成されて
いる。尚、各櫛歯5には第2図に示すように8つのスリ
ット5a・・・か放射状に形成されており、前記係合溝
6・・・はスリット5a・・・を介して互いに連通して
いる。
Then, the side plates 2, 2 and the support plate 3 of the casing l...
- Two main rollers A and B are inserted and supported in parallel and rotatably to each other, and these are arranged at angles α^ and α8 from the horizontal plane as shown in Fig. 2. There is. A plurality of link-shaped comb teeth 5 are formed on the outer periphery of each of the main rollers A and B in the axial direction, and between these plurality of comb teeth 5, there is a wafer W (see Fig. 2). ) is formed with an engaging groove 6 that is to be engaged with the outer periphery. As shown in FIG. 2, eight slits 5a are formed radially in each comb tooth 5, and the engagement grooves 6 communicate with each other via the slits 5a. ing.

又、ケーシングlの上半部てあって、水平面からα7の
角度位置(第2図参照)には、ポリ塩化ビニール製のプ
レート状の押え部材7か前記メインローラA、Bと平行
に架設されており、該押え部材7の内側部分には第4図
に示すように複数の櫛歯8・・・が長さ方向に形成され
ており、これらの櫛歯8・・・の間にはウェーハWの外
周部か係合すべき係合溝9・・・が形成されている。尚
、この係合溝9・・・の数とピッチはメインローラA、
Bに形成された前記係合溝6・・・のそれらと同一に設
定されている。
Further, in the upper half of the casing l, at an angle α7 from the horizontal plane (see Fig. 2), a plate-shaped holding member 7 made of polyvinyl chloride is installed parallel to the main rollers A and B. As shown in FIG. 4, a plurality of comb teeth 8 are formed in the longitudinal direction on the inner side of the holding member 7, and the wafer is inserted between these comb teeth 8. Engagement grooves 9 to be engaged with the outer periphery of W are formed. In addition, the number and pitch of this engagement groove 9... are the main roller A,
The engagement grooves 6 are set to be the same as those of the engagement grooves 6 formed in B.

而して、本実施例では、第2図に示すように、ケーシン
グ1内におけるメインローラA、Bの間、メインローラ
Bと押え部材7の間、押え部材7とメインローラAとの
間にはそれぞれポリ塩化ビニール製の補助ローラa、b
、cがメインローラA、B及び押え部材7に対して平行
、且つ回転自在に配されている。尚、これら補助ローラ
a。
In this embodiment, as shown in FIG. 2, there are are auxiliary rollers a and b made of polyvinyl chloride, respectively.
, c are arranged parallel to the main rollers A, B and the pressing member 7, and are rotatable. Note that these auxiliary rollers a.

b、cとメインローラA、Bとはその軸心が略同−ピッ
チ円上に位置するように配され、補助ローラa、b、c
は第2図に示すβa (=90°)、βb、β。の角度
位置にそれぞれ配されている。
b, c and main rollers A, B are arranged so that their axes are located on approximately the same pitch circle, and auxiliary rollers a, b, c
are βa (=90°), βb, and β shown in Fig. 2. are placed at the angular positions of

一方、第1図に示すようにケーシングlの前記側板2.
2には軸10.11が水平に突設されており、一方の軸
11には駆動ギヤ12及びセンターギヤ13が自由回転
自在に遊嵌されており、センターギヤ13は第3図に示
すように前記メインローラA、Hの端部に結着されたロ
ーラギヤ14.14と前記補助ローラa、b、cの端部
に結着されたローラギヤ15・・・に噛合している。
On the other hand, as shown in FIG. 1, the side plate 2 of the casing l.
2 has a shaft 10.11 projecting horizontally, and a drive gear 12 and a center gear 13 are loosely fitted to one shaft 11 so as to freely rotate, and the center gear 13 is as shown in FIG. The roller gears 14 and 14 are connected to the ends of the main rollers A and H, and the roller gears 15 and 15 are connected to the ends of the auxiliary rollers a, b, and c.

尚、駆動ギヤ12はモータ等の不図示の駆動源の出力軸
に結着されたギヤに噛合している。又、上記駆動ギヤ1
2、センターギヤ13及びローラギヤ14,14.15
・・・の材質としては全てポリ塩化ビニール(pvc)
が採用されている。
The drive gear 12 meshes with a gear connected to an output shaft of a drive source (not shown) such as a motor. In addition, the drive gear 1
2. Center gear 13 and roller gears 14, 14.15
All materials are polyvinyl chloride (PVC)
has been adopted.

次に、本実施例に係るエツチング装置によるエツチング
作業を説明する。
Next, an etching operation using the etching apparatus according to this embodiment will be explained.

先ず、ケーシングl内には多数枚(本実施例では、10
0枚)のウェーハW・・・がセットされるが、このセッ
トに先立って、補助ローラCかケーシングlの側板2,
2に設けられた不図示のセット治具を取り外すことによ
り、ケーシングlから分離される。すると、ウェーハW
・・・をケーシングl内にセットすることが可能となり
、各ウェーハWはメインローラA、Bに形成された保合
溝6゜6と押え部材7に形成された係合溝9にその外周
部を係合されることによって垂直に支持され、斯くてケ
ーシングl内には多数枚のウェーハW・・・か適当な間
隔をあけて長さ方向に整然と収納セットされる。
First, a large number of sheets (in this example, 10
0 wafers W... are set, but prior to this setting, the auxiliary roller C or the side plate 2 of the casing L,
By removing a setting jig (not shown) provided at 2, the casing 1 is separated from the casing 1. Then, the wafer W
. The wafers W are vertically supported by being engaged with each other, and thus a large number of wafers W are housed and set in an orderly manner in the length direction at appropriate intervals within the casing L.

その後、補助ローラCをセット治具を使用して元の位置
にセットすると、第2図に示すように各ウェーハWはそ
の外周縁をメインローラA、B及び補助ローラa、bに
よって4点支持される。
After that, when the auxiliary roller C is set to the original position using a setting jig, each wafer W is supported at four points at its outer peripheral edge by the main rollers A and B and the auxiliary rollers a and b, as shown in FIG. be done.

尚、ウェーハWの外周部と補助ローラCとの間には微少
隙間δが形成されている。
Note that a minute gap δ is formed between the outer peripheral portion of the wafer W and the auxiliary roller C.

以上の説明では、補助ローラCをセット治具の該当特定
位置において単に着脱可能に取り付けるように配してい
るか、ケーシング1の側板2,2に形成された不図示の
ガイド溝に沿って補助ローラCを回動させるようにして
もよい。又、支持板3は側板2と同一外径寸法の円板と
してもよい。
In the above explanation, the auxiliary roller C is simply arranged to be detachably attached at the corresponding specific position of the setting jig, or the auxiliary roller C is installed along a guide groove (not shown) formed in the side plates 2, 2 of the casing 1. C may be rotated. Further, the support plate 3 may be a circular plate having the same outer diameter as the side plate 2.

以上のようにして多数のウェーハW・・・か収納セット
されたケーシング1は第5図に示す槽16内に収容され
たエツチング作業に浸漬されるが、このときケーシング
1の側端に設けられた駆動ギヤ12には不図示の駆動源
から回転動力が入力され、該駆動ギヤ12とセンターギ
ヤ13は所定方向に所定速度で回転駆動される。すると
、これら駆動ギヤ12とセンターギヤ13の回転はロー
ラギヤ14,14.15・・・を介してメインローラA
、B及び補助ローラa、b、cに伝達され、これらか第
2図の矢印方向(反時計方向)にそれぞれ回転駆動され
て全ウェーハW・・・か同方向に回転せしめられる。
The casing 1, in which a large number of wafers W... have been stored and set as described above, is immersed in the etching work housed in the tank 16 shown in FIG. Rotational power is input to the drive gear 12 from a drive source (not shown), and the drive gear 12 and center gear 13 are rotationally driven in a predetermined direction at a predetermined speed. Then, the rotation of these drive gear 12 and center gear 13 is transmitted to main roller A via roller gears 14, 14, 15, .
, B, and auxiliary rollers a, b, and c, which are each rotated in the direction of the arrow (counterclockwise) in FIG. 2, thereby causing all the wafers W to rotate in the same direction.

ところて、各ウェーハWにはOF部Waが形成されてい
るが、本実施例ではOF部waかどこに位置しようとも
ウェーハWは径方向に移動せず、その軸心は固定されて
変化しない。このことを第6図乃至第10図に基づいて
説明する。尚、第6図乃至第10図はウェーハWの支持
状態を示す第2図と同様の図である。
Incidentally, each wafer W is formed with an OF section Wa, but in this embodiment, the wafer W does not move in the radial direction no matter where it is located in the OF section wa, and its axis is fixed and does not change. This will be explained based on FIGS. 6 to 10. Incidentally, FIGS. 6 to 10 are views similar to FIG. 2 showing the state in which the wafer W is supported.

第6図に示すようにウェーハWのOF部W、がメインロ
ーラAの位置に来た場合には、ウへ−八Wは補助ローラ
a、Cによって支持されるため、これの軸心は変化しな
い。
As shown in FIG. 6, when the OF part W of the wafer W comes to the position of the main roller A, the axis of the wafer W changes because it is supported by the auxiliary rollers a and C. do not.

次に、ウェーハWのOF部waが第7図に示すように補
助ローラaの位置に来た場合には、該ウェーハWはメイ
ンローラA、Bによって支持されるため、これの軸心は
変化しない。
Next, when the OF part wa of the wafer W comes to the position of the auxiliary roller a as shown in FIG. 7, the wafer W is supported by the main rollers A and B, so its axis changes. do not.

そして、第8図に示すようにウェーハWのOF部Waが
メインローラBの位置に来た場合には該ウェーハWは補
助ローラa、bによって支持されるため、これの軸心は
変化しない。
As shown in FIG. 8, when the OF portion Wa of the wafer W comes to the position of the main roller B, the axis of the wafer W does not change because it is supported by the auxiliary rollers a and b.

又、ウェーハWのOF部W、、か第9図に示すように補
助ローラbの位置に来た場合には、該ウェーハWはメイ
ンローラBと補助ローラCによって支持されるため、こ
れの軸心は変化しない。
Also, when the OF part W of the wafer W comes to the position of the auxiliary roller b as shown in FIG. 9, the wafer W is supported by the main roller B and the auxiliary roller C, The heart does not change.

更に、第10図に示すようにウェーハWのOF部Waか
補助ローラCの位置に来た場合には、該ウェーハWはメ
インローラA、Bと補助ローラa、bによりて支持され
、反応熱によるエツチング液の対流によってウェーハW
が上方へ動こうとしても、このウェーハWの動きは補助
ローラCによって規制され、ウェーハWは僅かにOF部
Waと補助ローラCとのクリアランスδ゛分(本実施例
では、約1 m m )たけしか動かないため、その軸
心は殆ど変化しない。この場合、別の補助ローラd(図
示せず)を補助ローラb、cの間に設ければ、ウェーハ
Wの軸心を完全に固定することができる。
Furthermore, as shown in FIG. 10, when the wafer W comes to the position of the OF part Wa or the auxiliary roller C, the wafer W is supported by the main rollers A and B and the auxiliary rollers a and b, and the reaction heat is Due to the convection of the etching solution, the wafer W
Even if the wafer W tries to move upward, the movement of the wafer W is regulated by the auxiliary roller C, and the wafer W is slightly spaced by a clearance δ' between the OF part Wa and the auxiliary roller C (in this example, about 1 mm). Since only the height moves, its axis hardly changes. In this case, if another auxiliary roller d (not shown) is provided between auxiliary rollers b and c, the axis of the wafer W can be completely fixed.

以上のように、OF部Waがどの位置にあってもウェー
ハWの軸心は変化せず、該ウェーハWは径方向に移動し
ないため、これの外周部かメインローラA、Bや補助ロ
ーラa、b、c、に強く衝突してダメージを被ることが
避けられる。
As described above, no matter where the OF part Wa is located, the axis of the wafer W does not change and the wafer W does not move in the radial direction. , b, c, and damage caused by a strong collision can be avoided.

又、本実施例ては、第5図に示すように槽16内にはバ
ブリング装置17か設置されており、該バブリング装置
17からはクリーンなエアーバブルがケーシング1に向
かって吹き付けられているため、このエアーバブルによ
フてエツチング液が攪拌され、該エツチング液の槽16
内での温度分布が均一となってウェーハW・・・の表面
が均一にエツチングされるとともに、エツチング液の劣
化か防がれる。
Furthermore, in this embodiment, as shown in FIG. 5, a bubbling device 17 is installed in the tank 16, and clean air bubbles are blown toward the casing 1 from the bubbling device 17. The etching liquid is stirred by the air bubbles, and the etching liquid tank 16
The temperature distribution within the wafer W becomes uniform, and the surface of the wafer W is etched uniformly, and deterioration of the etching solution is prevented.

更に、本実施例ではメインローラA、Bの櫛歯5・・・
に放射状のスリット5a・・・(第2図参照)を形成し
たため、各ウェーハWの櫛歯5・・・との接触面積が小
さく押えられるとともに、ウェーハWの外周部近傍にお
けるエツチング液の流通が円滑になされる。
Furthermore, in this embodiment, the comb teeth 5 of the main rollers A and B...
Since the radial slits 5a (see Fig. 2) are formed in the wafers W, the contact area with the comb teeth 5 of each wafer W is kept small, and the flow of the etching liquid near the outer periphery of the wafers W is suppressed. done smoothly.

(発明の効果) 以上の説明で明らかな如く、本発明によれば、ウェーハ
を支持すべき係合溝を軸方向に複数形成して成る少なく
とも2本のメインローラと、同様の係合溝を軸方向に複
数形成して成る押え部材をドラム枠状のケーシング内に
互いに平行、且つ回転自在に配するとともに、前記メイ
ンローラを回転駆動する駆動機構を含んで構成されるエ
ツチング装置において、前記ケーシング内の前記メイン
ローラ聞及び該メインローラと前記押え部材間の適当な
角度位置に前記駆動機構によって回転駆動される補助ロ
ーラな互いに平行、且つ回転自在に配したため、OFを
有するウェーハにおいて、OFがどの角度位置にあって
も該ウェーハはその外周部の少なくとも2点をメインロ
ーラ又は/及び補助ローラによって支持され、該ウェー
ハの径方向の移動か阻止されてその外周部のダメージか
最小限に抑えられるとともに、ウェーハの回転ムラが防
がれて均一なエツチングが可能になるという効果が得ら
れる。
(Effects of the Invention) As is clear from the above description, according to the present invention, at least two main rollers each having a plurality of engagement grooves formed in the axial direction for supporting a wafer, and a plurality of engagement grooves formed in the same direction, In the etching apparatus, the etching apparatus includes a plurality of holding members formed in the axial direction, which are rotatably arranged in parallel with each other in a drum frame-shaped casing, and a drive mechanism that rotationally drives the main roller. Since the auxiliary rollers rotated by the drive mechanism are disposed parallel to each other and rotatably at appropriate angular positions between the main rollers and between the main rollers and the presser member, the OF Regardless of the angular position, the wafer is supported at at least two points on its outer circumference by a main roller and/or an auxiliary roller, and radial movement of the wafer is prevented to minimize damage to the outer circumference. At the same time, uneven rotation of the wafer can be prevented and uniform etching can be achieved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明に係るエツチング装置のケーシンクの縦
断面図、第2図は第1図の■−■線拡線断大断面図3図
は第1図の矢視m−m線方向の図、第4図は第3図の■
−IV線断面図、第5図はエツチング装置の模式的平面
図、第6図乃至第10図はウェーハの支持状態を示す第
2図と同様の図である。 1・・・ケーシング、5・・・櫛歯、5a・・・スリッ
ト、6.9・・・係合溝、7・・・押え部材、16・・
・槽、17・・・バブリング装置、A、B・・・メイン
ローラ、a。 b、c−・・補助ローラ 特許出願人  信越半導体株式会社
FIG. 1 is a longitudinal sectional view of a casing of an etching apparatus according to the present invention, and FIG. 2 is an enlarged sectional view taken along the line ■-■ in FIG. Figure 4 is the ■ of Figure 3.
-IV line sectional view, FIG. 5 is a schematic plan view of the etching apparatus, and FIGS. 6 to 10 are views similar to FIG. 2 showing how the wafer is supported. DESCRIPTION OF SYMBOLS 1... Casing, 5... Comb teeth, 5a... Slit, 6.9... Engagement groove, 7... Pressing member, 16...
- Tank, 17... Bubbling device, A, B... Main roller, a. b, c-...Auxiliary roller patent applicant Shin-Etsu Semiconductor Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] (1)ウェーハを支持すべき係合溝を軸方向に複数形成
して成る少なくとも2本のメインローラと、同様の係合
溝を軸方向に複数形成して成る押え部材をドラム枠状の
ケーシング内に互いに平行、且つ回転自在に配するとと
もに、前記メインローラを回転駆動する駆動機構を含ん
で構成されるエッチング装置において、前記ケーシング
内の前記メインローラ間及び該メインローラと前記押え
部材間の適当な角度位置に前記駆動機構によって回転駆
動される補助ローラを互いに平行、且つ回転自在に配し
たことを特徴とするエッチング装置。
(1) At least two main rollers each having a plurality of engagement grooves formed in the axial direction to support the wafer, and a holding member consisting of a plurality of similar engagement grooves formed in the axial direction in a drum frame-shaped casing. In the etching apparatus, the etching apparatus includes a drive mechanism that rotationally drives the main rollers, which are disposed parallel to each other and rotatable within the casing, and between the main rollers in the casing and between the main rollers and the presser member. An etching apparatus characterized in that auxiliary rollers rotatably driven by the drive mechanism are arranged at appropriate angular positions parallel to each other and rotatable.
(2)前記メインローラに形成される係合溝は、これら
係合溝を画成する櫛歯に放射状に形成されたスリットを
介してメインローラの軸方向に互いに連通していること
を特徴とする請求項1記載のエッチング装置。
(2) The engagement grooves formed in the main roller communicate with each other in the axial direction of the main roller via slits formed radially in the comb teeth defining these engagement grooves. The etching apparatus according to claim 1.
(3)前記ケーシングが浸漬されるエッチング液を収容
して成る槽内に、ケーシングに向かってエアーバブルを
吹き付けるバブリング装置を設けたことを特徴とする請
求項1又は2記載のエッチング装置。
(3) The etching apparatus according to claim 1 or 2, further comprising a bubbling device that blows air bubbles toward the casing in a tank containing an etching solution in which the casing is immersed.
JP27518690A 1990-10-16 1990-10-16 Etching equipment Expired - Fee Related JPH0785471B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP27518690A JPH0785471B2 (en) 1990-10-16 1990-10-16 Etching equipment
EP91309478A EP0481723B1 (en) 1990-10-16 1991-10-15 A wafer etching apparatus
DE69108838T DE69108838T2 (en) 1990-10-16 1991-10-15 Device for etching platelets.
US07/776,787 US5211794A (en) 1990-10-16 1991-10-16 Wafer etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27518690A JPH0785471B2 (en) 1990-10-16 1990-10-16 Etching equipment

Publications (2)

Publication Number Publication Date
JPH04151837A true JPH04151837A (en) 1992-05-25
JPH0785471B2 JPH0785471B2 (en) 1995-09-13

Family

ID=17551882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27518690A Expired - Fee Related JPH0785471B2 (en) 1990-10-16 1990-10-16 Etching equipment

Country Status (4)

Country Link
US (1) US5211794A (en)
EP (1) EP0481723B1 (en)
JP (1) JPH0785471B2 (en)
DE (1) DE69108838T2 (en)

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JP2011521442A (en) * 2008-03-31 2011-07-21 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Method for etching an edge of a silicon wafer

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US5340437A (en) * 1993-10-08 1994-08-23 Memc Electronic Materials, Inc. Process and apparatus for etching semiconductor wafers
DE69428986D1 (en) * 1994-07-29 2001-12-13 St Microelectronics Srl Process for treating semiconductor wafers with liquids
US5593505A (en) * 1995-04-19 1997-01-14 Memc Electronic Materials, Inc. Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface
US6041938A (en) * 1996-08-29 2000-03-28 Scp Global Technologies Compliant process cassette
US5880479A (en) * 1996-10-25 1999-03-09 Vanguard International Semiconductor Corporation Wafer aligner apparatus using different diameter rollers
JPH10223585A (en) 1997-02-04 1998-08-21 Canon Inc Device and method for treating wafer and manufacture of soi wafer
US6391067B2 (en) 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
US6457929B2 (en) 1998-11-03 2002-10-01 Seh America, Inc. Apparatus and method for automatically transferring wafers between wafer holders in a liquid environment
KR100644054B1 (en) * 2004-12-29 2006-11-10 동부일렉트로닉스 주식회사 Cleaning apparatus and gate oxide pre-cleaning method
WO2010059556A1 (en) * 2008-11-19 2010-05-27 Memc Electronic Materials, Inc. Method and system for stripping the edge of a semiconductor wafer
US8853054B2 (en) 2012-03-06 2014-10-07 Sunedison Semiconductor Limited Method of manufacturing silicon-on-insulator wafers
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JP2011521442A (en) * 2008-03-31 2011-07-21 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Method for etching an edge of a silicon wafer

Also Published As

Publication number Publication date
DE69108838D1 (en) 1995-05-18
US5211794A (en) 1993-05-18
DE69108838T2 (en) 1995-12-14
JPH0785471B2 (en) 1995-09-13
EP0481723B1 (en) 1995-04-12
EP0481723A1 (en) 1992-04-22

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