JPH041514B2 - - Google Patents

Info

Publication number
JPH041514B2
JPH041514B2 JP57110264A JP11026482A JPH041514B2 JP H041514 B2 JPH041514 B2 JP H041514B2 JP 57110264 A JP57110264 A JP 57110264A JP 11026482 A JP11026482 A JP 11026482A JP H041514 B2 JPH041514 B2 JP H041514B2
Authority
JP
Japan
Prior art keywords
region
layer
laser
refractive index
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57110264A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59987A (ja
Inventor
Junichi Nishizawa
Tadahiro Oomi
Masakazu Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP57110264A priority Critical patent/JPS59987A/ja
Priority to GB08224295A priority patent/GB2111743B/en
Priority to US06/411,080 priority patent/US4534033A/en
Priority to FR8214583A priority patent/FR2512286B1/fr
Priority to DE19823231579 priority patent/DE3231579A1/de
Publication of JPS59987A publication Critical patent/JPS59987A/ja
Publication of JPH041514B2 publication Critical patent/JPH041514B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Geometry (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
JP57110264A 1981-08-25 1982-06-26 半導体レ−ザ Granted JPS59987A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP57110264A JPS59987A (ja) 1982-06-26 1982-06-26 半導体レ−ザ
GB08224295A GB2111743B (en) 1981-08-25 1982-08-24 Semiconductor laser
US06/411,080 US4534033A (en) 1981-08-25 1982-08-24 Three terminal semiconductor laser
FR8214583A FR2512286B1 (fr) 1981-08-25 1982-08-25 Laser a semi-conducteur
DE19823231579 DE3231579A1 (de) 1981-08-25 1982-08-25 Halbleiterlaser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57110264A JPS59987A (ja) 1982-06-26 1982-06-26 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS59987A JPS59987A (ja) 1984-01-06
JPH041514B2 true JPH041514B2 (fr) 1992-01-13

Family

ID=14531277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57110264A Granted JPS59987A (ja) 1981-08-25 1982-06-26 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS59987A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60201687A (ja) * 1984-03-27 1985-10-12 Sony Corp 半導体レ−ザ−
JPS6215871A (ja) * 1985-07-15 1987-01-24 Agency Of Ind Science & Technol 半導体レ−ザ装置
KR940005454B1 (ko) * 1991-04-03 1994-06-18 삼성전자 주식회사 화합물반도체장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152289A (en) * 1980-04-25 1981-11-25 Univ Osaka Stripe type semiconductor laser with gate electrode
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152289A (en) * 1980-04-25 1981-11-25 Univ Osaka Stripe type semiconductor laser with gate electrode
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor

Also Published As

Publication number Publication date
JPS59987A (ja) 1984-01-06

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