JPH04150028A - Cleaning apparatus of wafer - Google Patents

Cleaning apparatus of wafer

Info

Publication number
JPH04150028A
JPH04150028A JP27456890A JP27456890A JPH04150028A JP H04150028 A JPH04150028 A JP H04150028A JP 27456890 A JP27456890 A JP 27456890A JP 27456890 A JP27456890 A JP 27456890A JP H04150028 A JPH04150028 A JP H04150028A
Authority
JP
Japan
Prior art keywords
wafer
cleaning
liquid
gripped
pure water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27456890A
Other languages
Japanese (ja)
Inventor
Hideaki Kawashima
川島 英顕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP27456890A priority Critical patent/JPH04150028A/en
Publication of JPH04150028A publication Critical patent/JPH04150028A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To clean an uncleaned part which has been gripped by a method wherein a wafer in a gripped state is turned by a pressure obtained by spraying a liquid from a liquid jet means on a part near the outer circumference of the wafer. CONSTITUTION:Pure water 7 is poured into a cleaning tank 6; a wafer 1 which has been gripped near the outer circumferential edge 1a by using three gripping members 10 arranged at equal intervals on the circumference of a circle is immersed in it; the first-half cleaning operation of the wafer 1 is executed by the pure water 7. Then, the gripping members 10 are slid in such a way that the wafer 1 can be turned; the wafer 1 is turned by a pressure obtained by spraying the jetted pure water 33 in the tangential direction on a part near the outer circumference of the wafer 1 via a jet nozzle 31 from a jet pump 30; uncleaned parts which have been gripped can be cleaned. Thereby, the whole of the wafer 1 including the uncleaned parts which have been gripped can be cleaned effectively.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の製造工程において使用されるウ
ェハ洗浄装置に係り、特に、ウェハを1枚ずつ洗浄する
枚葉式のウェハ洗浄装置に関する。
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a wafer cleaning apparatus used in the manufacturing process of semiconductor devices, and particularly relates to a single-wafer type wafer cleaning apparatus that cleans wafers one by one. .

(従来の技術〕 周知のように、半導体装置の製造工程においては、各工
程の前処理及び後処理として、ウェハを種々の洗浄用流
体によって何回も洗浄する必要がある。このときに使用
されるウェハ洗浄装置には、ウェハを1枚ずつ洗浄する
枚葉式と、複数枚のウェハをカセット治具に収容して洗
浄するバッチ式第5図は上記枚葉式のウェハ洗浄装置の
一従来例を示すものであり、ウェハ1の外周近傍の3箇
所をそれぞれ把持具2によって把持して洗浄槽3の洗浄
液4の中に没入させ、この状態でウェハ1を浸漬或いは
揺動させることによって、ウェハ1の表裏両面を洗浄し
ている。
(Prior Art) As is well known, in the manufacturing process of semiconductor devices, it is necessary to clean the wafer many times with various cleaning fluids as pre-treatment and post-treatment for each process. There are two types of wafer cleaning equipment: a single wafer type that cleans wafers one by one, and a batch type that cleans multiple wafers by storing them in a cassette jig. This shows an example. By gripping three places near the outer circumference of the wafer 1 with the gripping tool 2 and immersing it in the cleaning liquid 4 of the cleaning tank 3, and immersing or swinging the wafer 1 in this state, Both the front and back surfaces of the wafer 1 are being cleaned.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、第5図に示したような従来の枚葉式のウ
ェハ洗浄装置では、洗浄中にウェハ1の外周近傍を把持
具2によって機械的に把持するので、そのウェハ1の把
持されていた部分Pがどうしても未洗浄部分として残り
、その部分Pの洗浄状態が他の部分に比べて著しく悪い
という問題があった。
However, in the conventional single-wafer type wafer cleaning apparatus as shown in FIG. There is a problem in that P inevitably remains as an uncleaned portion, and the cleaning condition of that portion P is significantly worse than that of other portions.

そこで本発明は、ウェハを把持して洗浄を行う際に、そ
のウェハの把持されていた部分も他の部分と同様に洗浄
することができるウェハ洗浄装置を提供することを目的
とする。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a wafer cleaning apparatus that, when cleaning a wafer while gripping it, can also clean the gripped portion of the wafer in the same manner as other portions.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するために、本発明によるウェハ洗浄装
置は、洗浄用液体が注入される洗浄槽と、ウェハの外周
近傍に接触してそのウェハを回転可能に把持し得る複数
の把持部材と、前記洗浄用液体が注入された前記洗浄槽
内で、前記把持部材により回転可能に把持された前記ウ
ェハの外周近傍に液体を吹き付けてそのウェハを回転さ
せる液体噴射手段とを具備するものである。
In order to achieve the above object, a wafer cleaning device according to the present invention includes: a cleaning tank into which a cleaning liquid is injected; a plurality of gripping members that can contact near the outer periphery of a wafer and rotatably grip the wafer; The wafer is provided with a liquid jetting means for spraying liquid near the outer periphery of the wafer rotatably gripped by the gripping member in the cleaning tank into which the cleaning liquid is injected to rotate the wafer.

また、前記洗浄用液体を前記液体噴射手段に供給する手
段を設けてもよい。
Further, a means for supplying the cleaning liquid to the liquid ejecting means may be provided.

〔作 用〕[For production]

上記のように構成された本発明によれば、液体噴射手段
によって液体がウェハの外周近傍に吹き付けられると、
ウェハが把持部材によって把持された状態で液体の圧力
により回転される。これによって、把持部材に対するウ
ェハの位置が変わり、それまで把持部材により把持され
ていた部分が露呈される。従って、ウェハを把持して洗
浄を行う際に、そのウェハの把持されていた未洗浄部分
の洗浄が可能になる。
According to the present invention configured as described above, when the liquid is sprayed near the outer periphery of the wafer by the liquid jetting means,
The wafer is rotated by the pressure of the liquid while being held by the holding member. This changes the position of the wafer relative to the gripping member, exposing the portion that was previously gripped by the gripping member. Therefore, when cleaning a wafer while gripping it, it is possible to clean the gripped uncleaned portion of the wafer.

また、洗浄用液体を液体噴射手段に供給すると、洗浄用
液体自体をウェハに吹き付ける液体として利用すること
ができる。
Further, when the cleaning liquid is supplied to the liquid jetting means, the cleaning liquid itself can be used as a liquid to be sprayed onto the wafer.

〔実施例] 以下、本発明を適用したウェハ洗浄装置の実施例を第1
図〜第4C図を参照して説明する。
[Example] Hereinafter, a first example of a wafer cleaning apparatus to which the present invention is applied will be described.
This will be explained with reference to FIGS.

まず、第1図に示すように、このウェハ洗浄装置の洗浄
槽6は、はぼ直方体状の箱型に形成され、その上面は解
放されている。この洗浄槽6内に洗浄用液体として純水
7が注入される。そして、この純水7内にウェハ1が没
入される。
First, as shown in FIG. 1, the cleaning tank 6 of this wafer cleaning apparatus is formed in the shape of a rectangular parallelepiped box, and its upper surface is open. Pure water 7 is poured into this cleaning tank 6 as a cleaning liquid. Then, the wafer 1 is immersed in this pure water 7.

第1図及び第2図に示すように、ウェハ1は、円側上で
等間装置きに配置された3個の把持部材10によって把
持されている。これら把持部材10は全て同一のもので
あり、その前端には円弧状のV字溝からなる把持部11
が形成されている。
As shown in FIGS. 1 and 2, the wafer 1 is gripped by three gripping members 10 arranged equidistantly on the circular side. These gripping members 10 are all the same, and the front end thereof has a gripping portion 11 consisting of an arcuate V-shaped groove.
is formed.

そして、各把持部材10は円形の本体基板20上に取付
けられ、それぞれ径方向である矢印a、a′方向へ移動
自在に構成されている。なお、各把持部材10の移動は
、図外の駆動機構によって行われる。また、本体基板2
0はウェハ洗浄装置の移動アーム等(図示せず)の先端
に取付けられ、その本体基板20の中央部には円形の開
孔21が設けられている。
Each gripping member 10 is mounted on a circular main body substrate 20, and is configured to be movable in the radial directions of arrows a and a', respectively. Note that each gripping member 10 is moved by a drive mechanism not shown. In addition, the main board 2
0 is attached to the tip of a movable arm or the like (not shown) of a wafer cleaning device, and a circular opening 21 is provided in the center of the main substrate 20.

そして、各把持部材10が矢印a方向へ移動されると、
把持部11がウェハlの外周エツジlaの近傍に係合さ
れ、そのウェハlが把持される。
Then, when each gripping member 10 is moved in the direction of arrow a,
The grip portion 11 is engaged near the outer peripheral edge la of the wafer l, and the wafer l is gripped.

また、各把持部材10が矢印a′方向へ移動されると、
把持部11がウェハ1の外周エツジ1aの近傍から離脱
される。なお、各把持部材10は、ウェハlに設けられ
ている直線状のオリエンテーションフラツト1b部分で
も把持可能である。さらに、各把持部材10は、ウェハ
1の把持状態がら矢印a′方向へ一定ストロークだけ移
動された状態で停止可能であり、これによりウェハIを
回転可能に把持し得るように構成されている。
Furthermore, when each gripping member 10 is moved in the direction of arrow a',
The gripping portion 11 is removed from the vicinity of the outer peripheral edge 1a of the wafer 1. Note that each gripping member 10 can also be gripped by a linear orientation flat 1b provided on the wafer l. Furthermore, each gripping member 10 is configured to be able to stop after being moved by a certain stroke in the direction of arrow a' while gripping the wafer 1, so that it can rotatably grip the wafer I.

次に、第1図に示すように、このウェハ洗浄装置は液体
噴射手段を具備している。即ち、洗浄槽6の外側には噴
射ポンプ30が配置されており、この噴射ポンプ30の
吐出口に接続された噴射ノズル31が、洗浄槽6の内部
へ延設されている。
Next, as shown in FIG. 1, this wafer cleaning apparatus is equipped with liquid jetting means. That is, an injection pump 30 is arranged outside the cleaning tank 6, and an injection nozzle 31 connected to a discharge port of the injection pump 30 extends into the inside of the cleaning tank 6.

なお、第2図にも示すように、噴射ノズル31の位fi
lは、ウェハ1の外周エンジIaの近傍に対してほぼ接
線方向となっている。また、噴射ポンプ30の吸入口と
洗浄槽6との間には、純水7を供給する手段として供給
バイブ32が接続されている。
In addition, as shown in FIG. 2, the position of the injection nozzle 31 is
l is approximately tangential to the vicinity of the outer circumferential edge Ia of the wafer 1. Further, a supply vibrator 32 is connected between the suction port of the injection pump 30 and the cleaning tank 6 as means for supplying pure water 7.

従って、噴射ポンプ30が駆動されると、洗浄槽6内の
純水7が供給パイプ32を介して噴射ポンプ30に導入
され、その純水7が噴射ノズル31から噴出純水33と
なって、2つの把持部材10のほぼ中間位置でウェハ1
の外周近傍に吹き付けられるように構成されている。
Therefore, when the injection pump 30 is driven, the pure water 7 in the cleaning tank 6 is introduced into the injection pump 30 via the supply pipe 32, and the pure water 7 is jetted from the injection nozzle 31 as pure water 33. The wafer 1 is held at approximately the middle position between the two gripping members 10.
It is configured to be sprayed near the outer periphery of the

なお、第3図は液体噴射手段の変形例を示すものであり
、1本或いは2本の噴射ノズル31がウェハ1の外周近
傍の片面或いは両面に対して傾斜して配置されている。
Note that FIG. 3 shows a modification of the liquid jetting means, in which one or two jetting nozzles 31 are arranged at an angle with respect to one or both surfaces near the outer periphery of the wafer 1.

このような構成によって、噴出純水33をウェハ1の外
周近傍の片面或いは両面に吹き付けてもよい。
With such a configuration, the jetted pure water 33 may be sprayed onto one or both surfaces of the wafer 1 near its outer periphery.

次に、上述のように構成されたウェハ洗浄装置の動作を
説明する。
Next, the operation of the wafer cleaning apparatus configured as described above will be explained.

まず、第1図に示す洗浄槽6の外部でウェハ1が装着さ
れる。即ち、矢印a′方向へ移動された各把持部材10
の間にウェハlが挿入され、各把持部材lOが矢印a方
向へ移動されて、把持部11がウェハ1の外周エツジ1
aの近傍に係合される。
First, the wafer 1 is mounted outside the cleaning tank 6 shown in FIG. That is, each gripping member 10 moved in the direction of arrow a'
The wafer l is inserted between the two, and each gripping member lO is moved in the direction of the arrow a, so that the gripping part 11 grips the outer peripheral edge 1 of the wafer 1.
It is engaged near a.

この把持状態で、第4A図に示すように、ウェハ1が洗
浄槽6内に没入され、純水7によってウェハ1の前半の
洗浄が行われる。なお、第2図に示すように、本体基板
20に設けられた開孔21によって、本体基板20とウ
ェハ1との間にも純水7を充分に流動させることができ
る。
In this gripped state, the wafer 1 is immersed into the cleaning tank 6, as shown in FIG. 4A, and the first half of the wafer 1 is cleaned with pure water 7. Note that, as shown in FIG. 2, the apertures 21 provided in the main substrate 20 allow the pure water 7 to flow sufficiently between the main substrate 20 and the wafer 1.

所定の洗浄が終了すると、第1図及び第2図において、
各把持部材10が矢印a′方向へ一定ストロークだけ移
動され、ウェハlが回転可能な状態となる。そして、噴
射ポンプ30が駆動され、噴射ノズル31によって噴出
純水33がウェハlの外周近傍に吹き付けられる。この
噴出純水33の噴出圧力によって、第4B図に示すよう
に、ウェハ1は各把持部材10によって把持された状態
で矢印す方向へ回転されて行く。
When the prescribed cleaning is completed, in FIGS. 1 and 2,
Each gripping member 10 is moved by a certain stroke in the direction of arrow a', and the wafer 1 becomes rotatable. Then, the injection pump 30 is driven, and the injection nozzle 31 sprays the pure water 33 onto the vicinity of the outer periphery of the wafer l. Due to the jetting pressure of the jetted pure water 33, the wafer 1 is rotated in the direction of the arrow mark while being gripped by each gripping member 10, as shown in FIG. 4B.

なお、予め噴出純水33を吹き付けてから、ウェハ1の
把持状態を弛めてもよいが、こうすると、把持状態が弛
む間にウェハ1が各把持部材10によって擦られる恐れ
があるので、前述したように、予めウェハ1を回転可能
な状態にした後、噴出純水33を吹き付けるのが好まし
い。
It is also possible to loosen the grip on the wafer 1 after spraying the deionized water 33 in advance, but in this case, there is a risk that the wafer 1 will be rubbed by each grip member 10 while the grip loosens. As described above, it is preferable to make the wafer 1 rotatable in advance and then spray the pure water 33 onto it.

噴出純水33が一定時間だけ吹き付けられて、ウェハ1
が一定角度だけ回転されると、第1図において、噴射ポ
ンプ30の駆動が停止される。そして、各把持部材10
が矢印a方向へ移動され、把持部11が再びウェハ1の
外周エツジ1aの近傍に係合される。この把持状態で、
第4C図に示すように、ウェハ1の後半の洗浄が行われ
る。
The jetted pure water 33 is sprayed for a certain period of time, and the wafer 1 is
When the injection pump 30 is rotated by a certain angle, the drive of the injection pump 30 is stopped as shown in FIG. And each gripping member 10
is moved in the direction of the arrow a, and the gripping portion 11 is engaged again near the outer peripheral edge 1a of the wafer 1. In this gripping state,
As shown in FIG. 4C, the latter half of the wafer 1 is cleaned.

以上のように、第4A図に示す洗浄工程の前半が終了し
た後、第4B図に示すようにウェハ1を回転させると、
各把持部材lOに対するウェハ1の位置が変わり、それ
まで各把持部材10により把持されていた部分Pが露呈
される。従って、前半の洗浄時に各把持部材10により
把持されて洗浄状態が悪かった部分Pを、第4C図に示
す後半の洗浄時に効果的に洗浄することができる。なお
、ウェハ1の回転時にウェハ1の各部分Pが再び各把持
部材10に把持されないように、噴出純水33の噴射時
間は予め設定されている。
As described above, after the first half of the cleaning process shown in FIG. 4A is completed, when the wafer 1 is rotated as shown in FIG. 4B,
The position of the wafer 1 relative to each gripping member 10 changes, and the portion P that was previously gripped by each gripping member 10 is exposed. Therefore, the portion P that was gripped by each gripping member 10 during the first half of the cleaning and was in a poor cleaning state can be effectively cleaned during the second half of the cleaning shown in FIG. 4C. Note that the jetting time of the jetted pure water 33 is set in advance so that each portion P of the wafer 1 is not gripped by each gripping member 10 again when the wafer 1 is rotated.

ところで、本実施例では、洗浄槽6内の純水7が噴射ポ
ンプ30に供給されるので、純水7自体をウェハ1に吹
き付ける噴出純水33として利用することができ、吹き
付は用の液体を特別に用意する必要がない。
By the way, in this embodiment, since the pure water 7 in the cleaning tank 6 is supplied to the injection pump 30, the pure water 7 itself can be used as the jetted pure water 33 to be sprayed onto the wafer 1, and the spraying is unnecessary. There is no need to prepare a special liquid.

なお、上述した前半の洗浄、ウェハ1の回転、後半の洗
浄の後、さらにウェハ1の回転及び洗浄を何回繰り返し
てもよい。そして、最終的に洗浄が終了すると、ウェハ
1が洗浄槽6内から取り出され、各把持部材10が矢印
a′方向へ移動されてウェハ1が脱着される。
Note that, after the first half cleaning, rotation of the wafer 1, and second half cleaning described above, the rotation and cleaning of the wafer 1 may be repeated any number of times. When the cleaning is finally completed, the wafer 1 is taken out from the cleaning tank 6, and each gripping member 10 is moved in the direction of the arrow a' to attach and detach the wafer 1.

以上、本発明の実施例に付き説明したが、本発明は実施
例に限定されることなく、本発明の技術的思想に基づい
て各種の有効な変更並びに応用が可能である。
Although the embodiments of the present invention have been described above, the present invention is not limited to the embodiments, and various effective changes and applications can be made based on the technical idea of the present invention.

例えば、実施例では把持部材を一定ストロークだけ移動
させてウェハを回転可能に把持したが、把持部材は実質
的にウェハを回転可能に把持し得るものであればよく、
常にウェハを回転可能に把持するものでもよい。また、
その把持部材の構成は各種の変更が可能である。
For example, in the embodiment, the wafer is rotatably gripped by moving the gripping member by a certain stroke, but the gripping member may be any member that can substantially rotatably grip the wafer.
It may also be one that always holds the wafer in a rotatable manner. Also,
The configuration of the gripping member can be modified in various ways.

また、洗浄用液体としては、純水以外に薬液やリンス液
等を使用することができる。さらに、ウェハに吹き付け
る液体は、必ずしも洗浄用液体と同しものでなくてもよ
い。
Further, as the cleaning liquid, a chemical solution, a rinsing liquid, or the like can be used in addition to pure water. Furthermore, the liquid sprayed onto the wafer does not necessarily have to be the same as the cleaning liquid.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、洗浄槽内におい
て把持部材によってウェハを把持した状態で、液体噴射
手段による液体の吹き付けによってウェハを回転させる
ことができる。従って、ウェハを把持して洗浄を行う際
に、そのウェハを回転させることによって、把持されて
いた未洗浄部分も他の部分と同様に洗浄することが可能
になり、ウェハの全体を極めて効果的に洗浄することが
できる。
As described above, according to the present invention, the wafer can be rotated by spraying liquid by the liquid jetting means while the wafer is gripped by the gripping member in the cleaning tank. Therefore, when cleaning a wafer while gripping it, by rotating the wafer, the uncleaned portion of the gripped wafer can be cleaned in the same way as other parts, making it possible to clean the entire wafer extremely effectively. Can be washed.

また、本発明によれば、ウェハに回転部材等を機械的に
接触させることなく、液体によってウェハの回転を非接
触で行うことができるので、ウェハの摩耗によるパーテ
ィクルの発生等を未然に防止することができる。
Furthermore, according to the present invention, the wafer can be rotated in a non-contact manner using liquid without mechanically contacting the wafer with a rotating member or the like, thereby preventing the generation of particles due to wafer wear. be able to.

さらに、洗浄用液体を液体噴射手段に供給すると、洗浄
用液体自体をウェハに吹き付ける液体として利用するこ
とができるので、吹き付は用の液体を特別に用意する必
要がなく、装置の簡素化を図ることができる。
Furthermore, when the cleaning liquid is supplied to the liquid jetting means, the cleaning liquid itself can be used as the liquid to be sprayed onto the wafer, so there is no need to prepare a special liquid for spraying, and the equipment can be simplified. can be achieved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図〜第4C図は本発明を適用したウェハ洗浄装置の
実施例を示すものであって、第1図は洗浄時における装
置全体の継断面状態の正面図、第2図は第1図■−■線
での拡大断面図、第3図は液体噴射手段の変形例におけ
る斜視図、第4A図〜第4C図は洗浄時の概略図である
。 第5図はウェハ洗浄装置の一従来例を示す概略図である
。 なお、図面に用いた符号において、 1・・・・・・・・・・・・・・・ウェハ6・・・・・
・・・・・・・・・・洗浄槽7・・・・・・・・・・・
・・・・純水10・・・・・・・・・・・・・・・把持
部材11・・・・・・・・・・・・・・・把持部30・
・・・・・・・・・・・・・・噴射ポンプ31・・・・
・・・・・・・・・・・噴射ノズル32・・・・・・・
・・・・・・・・供給パイプ33・・・・・・・・・・
・・・・・噴出純水である。
1 to 4C show an embodiment of a wafer cleaning apparatus to which the present invention is applied, in which FIG. 1 is a front view of the joint cross-sectional state of the entire apparatus during cleaning, and FIG. FIG. 3 is a perspective view of a modified example of the liquid ejecting means, and FIGS. 4A to 4C are schematic views at the time of cleaning. FIG. 5 is a schematic diagram showing a conventional example of a wafer cleaning apparatus. In addition, in the symbols used in the drawings, 1...Wafer 6...
・・・・・・・・・Cleaning tank 7・・・・・・・・・・・・
...Pure water 10...Gripping member 11...Gripping part 30.
・・・・・・・・・・・・・・・Injection pump 31・・・・
......Injection nozzle 32...
......Supply pipe 33...
...This is pure water that is gushing out.

Claims (2)

【特許請求の範囲】[Claims] (1)洗浄用液体が注入される洗浄槽と、 ウェハの外周近傍に接触してそのウェハを回転可能に把
持し得る複数の把持部材と、 前記洗浄用液体が注入された前記洗浄槽内で、前記把持
部材により回転可能に把持された前記ウェハの外周近傍
に液体を吹き付けてそのウェハを回転させる液体噴射手
段と、 を具備するウェハ洗浄装置。
(1) A cleaning tank into which a cleaning liquid is injected; a plurality of gripping members capable of contacting near the outer periphery of a wafer and rotatably gripping the wafer; and within the cleaning tank into which the cleaning liquid is injected. A wafer cleaning apparatus comprising: a liquid jetting means for spraying a liquid near the outer periphery of the wafer rotatably gripped by the gripping member to rotate the wafer.
(2)前記洗浄用液体を前記液体噴射手段に供給する手
段を設けたことを特徴とする請求項1記載のウェハ洗浄
装置。
(2) The wafer cleaning apparatus according to claim 1, further comprising means for supplying the cleaning liquid to the liquid jetting means.
JP27456890A 1990-10-12 1990-10-12 Cleaning apparatus of wafer Pending JPH04150028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27456890A JPH04150028A (en) 1990-10-12 1990-10-12 Cleaning apparatus of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27456890A JPH04150028A (en) 1990-10-12 1990-10-12 Cleaning apparatus of wafer

Publications (1)

Publication Number Publication Date
JPH04150028A true JPH04150028A (en) 1992-05-22

Family

ID=17543552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27456890A Pending JPH04150028A (en) 1990-10-12 1990-10-12 Cleaning apparatus of wafer

Country Status (1)

Country Link
JP (1) JPH04150028A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6494221B1 (en) * 1998-11-27 2002-12-17 Sez Ag Device for wet etching an edge of a semiconductor disk
EP2357663A2 (en) * 2008-11-04 2011-08-17 Siltron Inc. Apparatus and method for wet-processing object, and fluid diffusion plate and barrel used therein

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6494221B1 (en) * 1998-11-27 2002-12-17 Sez Ag Device for wet etching an edge of a semiconductor disk
EP2357663A2 (en) * 2008-11-04 2011-08-17 Siltron Inc. Apparatus and method for wet-processing object, and fluid diffusion plate and barrel used therein
EP2357663A4 (en) * 2008-11-04 2012-07-18 Siltron Inc Apparatus and method for wet-processing object, and fluid diffusion plate and barrel used therein

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