JPH04145648A - Packaging method of semiconductor device of semiconductor chip - Google Patents
Packaging method of semiconductor device of semiconductor chipInfo
- Publication number
- JPH04145648A JPH04145648A JP2270134A JP27013490A JPH04145648A JP H04145648 A JPH04145648 A JP H04145648A JP 2270134 A JP2270134 A JP 2270134A JP 27013490 A JP27013490 A JP 27013490A JP H04145648 A JPH04145648 A JP H04145648A
- Authority
- JP
- Japan
- Prior art keywords
- hydrogen
- package
- semiconductor chip
- cover
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 7
- 238000004806 packaging method and process Methods 0.000 title claims description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 75
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 75
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 29
- 239000000956 alloy Substances 0.000 claims abstract description 29
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims description 84
- 229910052751 metal Inorganic materials 0.000 claims description 84
- 238000007789 sealing Methods 0.000 claims description 10
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 9
- 229910000531 Co alloy Inorganic materials 0.000 description 5
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000345998 Calamus manan Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000012950 rattan cane Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体装置及び半導体チップのパッケージング方法に関
し、
半導体チップの冷却性か良く、且つ低コストの半導体装
置を提供すること、水素が発火する恐れがなく、且つ金
属パッケージ内に空気中の酸素。[Detailed Description of the Invention] [Summary] An object of the present invention is to provide a semiconductor device and a method for packaging a semiconductor chip, which have good cooling performance for the semiconductor chip, are low cost, have no risk of hydrogen igniting, and are made of metal. Oxygen in the air inside the package.
水分が封入される恐れのない半導体チップのパッケージ
ング方法を提供することを目的として、金属ケースと該
金属ケースの開口に封着するカバーとからなる金属パッ
ケージを備え、該金属パッケージに半導体チップが封止
実装されるとともに、水素吸蔵合金が封入され、該水素
吸蔵合金が放出した水素が、該金属パッケージ内に充満
された構成とする。The purpose of the present invention is to provide a method for packaging a semiconductor chip without the risk of moisture being trapped in it.The metal package includes a metal case and a cover that is sealed to the opening of the metal case, and the semiconductor chip is placed in the metal package. The metal package is sealed and mounted, a hydrogen storage alloy is enclosed, and hydrogen released by the hydrogen storage alloy is filled in the metal package.
本発明は、半導体装置及び半導体チップのパッケージン
グ方法に関する。The present invention relates to a semiconductor device and a semiconductor chip packaging method.
近年のＬＳＩ、ハイブリットＩＣ等の半導体チップは、
実装密度の向上に伴い発熱量が増加している。したがっ
て、冷却性の良い半導体装置が要求されている。Recent semiconductor chips such as LSI and hybrid IC,
The amount of heat generated is increasing as the packaging density improves. Therefore, a semiconductor device with good cooling performance is required.
第３図は従来の半導体装置の断面図である。 FIG. 3 is a sectional view of a conventional semiconductor device.
第３図において、５は、ステンレス鋼、或いは鉄−ニッ
ケルーコバルト合金等よりなる上方が開口した浅い箱形
の金属ケースである。In FIG. 3, reference numeral 5 denotes a shallow box-shaped metal case that is open at the top and is made of stainless steel, iron-nickel-cobalt alloy, or the like.
金属ケース５には、ハラメチツクシールされたリード２
が、底板を貫通して配列している。The metal case 5 has a lead 2 that is sealed with a harametic seal.
are arranged through the bottom plate.
そして、金属ケース５の底板に半導体チップｌをフェー
スアップにダンボンデングし、半導体チップｌの電極と
対応するリード２の頭部とを、金線等を介して接続して
いる。Then, the semiconductor chip 1 is bonded face-up to the bottom plate of the metal case 5, and the electrodes of the semiconductor chip 1 and the heads of the corresponding leads 2 are connected via gold wires or the like.
金属ケース５の開口にカバー６を被せ、例えばレーザー
溶接等して金属ケース５内を気密に封止している。A cover 6 is placed over the opening of the metal case 5, and the inside of the metal case 5 is hermetically sealed by, for example, laser welding.
上述のように金属ケース５に封止実装された半導体チッ
プｌの熱は、半導体チップの回路素子−チツブ基板−金
属ケース底板に伝達され、金属ケース５の表面から外部
に放出されるのであるが、チップ基板の熱伝導率が小さ
いので、半導体チップの冷却性が悪い。As described above, the heat of the semiconductor chip l sealed and mounted in the metal case 5 is transmitted to the circuit elements of the semiconductor chip, the chip substrate, and the bottom plate of the metal case, and is emitted to the outside from the surface of the metal case 5. , Since the thermal conductivity of the chip substrate is low, the cooling performance of the semiconductor chip is poor.
したがって、従来はカバー６の封着作業を良熱伝導性気
体（ヘリウム、水素等）８の雰囲気中で実施して、良熱
伝導性気体８を金属ケース５内に封入し、半導体チップ
の回路素子−良熱伝導性気体−金属ケースという熱放出
路を形成するようにしている。Therefore, conventionally, the sealing work of the cover 6 was carried out in an atmosphere of a good thermally conductive gas (helium, hydrogen, etc.) 8, the good thermally conductive gas 8 was sealed in the metal case 5, and the circuit of the semiconductor chip was sealed. A heat release path is formed between the element, a gas with good thermal conductivity, and the metal case.
ヘリウムの熱伝導率は、空気の熱伝導率（窒素の熱伝導
率は空気の熱伝導率にほぼ等しい）のほぼ７倍であり、
水素の熱伝導率は、空気の熱伝導率のほぼ８倍であるの
で、上述のように良熱伝導性気体８を封入した半導体装
置は、半導体チップの冷却性が著しく高い。The thermal conductivity of helium is approximately seven times that of air (the thermal conductivity of nitrogen is approximately equal to that of air),
Since the thermal conductivity of hydrogen is approximately eight times that of air, the semiconductor device in which the good thermally conductive gas 8 is sealed as described above has extremely high cooling performance for the semiconductor chip.
上述のように、従来はカバーの封着作業を良熱伝導性気
体の雰囲気中で行い、金属ケース内に良熱伝導性気体を
封入している。As described above, conventionally, the cover is sealed in an atmosphere of a gas with good thermal conductivity, and the gas with good thermal conductivity is sealed inside the metal case.
したがって、実際に封入される良熱伝導性気体の他に多
量の良熱伝導性気体が消費されるので、得られる半導体
装置が高価になるという問題点があった。Therefore, in addition to the actually sealed gas with good thermal conductivity, a large amount of gas with good thermal conductivity is consumed, resulting in a problem that the resulting semiconductor device becomes expensive.
特にヘリウムは水素に較べて単価が高いので、半導体装
置が高価となる。In particular, since helium is more expensive than hydrogen, semiconductor devices become more expensive.
一方、水素を封入したものは、ヘリウムを封入したもの
に比較して安価であるが、水素雰囲気中でカバーの封着
作業を実施しており、水素の発火性が高いので、この封
着作業が極めて危険であるという問題点があった。On the other hand, hydrogen-filled ones are cheaper than helium-filled ones, but the sealing work is carried out in a hydrogen atmosphere, and since hydrogen is highly flammable, this sealing work The problem was that it was extremely dangerous.
本発明はこのような点に鑑みて創作されたもので、半導
体チップの冷却性が良く、且つ低コストの半導体装置を
提供すること目的としており、他の目的は、水素が発火
する恐れがなく、且つ金属パッケージ内に空気中の酸素
、水分が封入される恐れのない半導体チップのパッケー
ジング方法を提供することにある。The present invention was created in view of these points, and the purpose is to provide a low-cost semiconductor device that has good cooling properties for semiconductor chips.Another purpose of the present invention is to provide a semiconductor device that has good cooling performance for semiconductor chips and is low in cost. Another object of the present invention is to provide a method for packaging a semiconductor chip in which there is no possibility that oxygen or moisture in the air will be trapped in the metal package.
上記の目的を達成するために本発明は第１図に例示した
ように、金属ケース５と金属ケース５の開口に封着する
カバー６とからなる金属パッケージを備え、その金属パ
ッケージに半導体チップ１か封止実装するとともに、水
素吸蔵合金１０を封入する。In order to achieve the above object, the present invention includes a metal package consisting of a metal case 5 and a cover 6 sealed to an opening of the metal case 5, as illustrated in FIG. At the same time, the hydrogen storage alloy 10 is sealed.
そして、水素吸蔵合金１０か放出した水素が、金属パッ
ケージ内に充満された構成とする。Then, the metal package is filled with hydrogen released by the hydrogen storage alloy 10.
一方、第２の発明は、金属ケースに半導体チップを実装
し、水素吸蔵合金を入れた後に、窒素雰囲気中で金属ケ
ースの開口にカバーを封着する。On the other hand, in the second invention, a semiconductor chip is mounted on a metal case, a hydrogen storage alloy is put in the metal case, and then a cover is sealed over the opening of the metal case in a nitrogen atmosphere.
その後、金属パッケージ内に封入した水素吸蔵合金を加
熱し水素を放出させて、金属パッケージ内に水素を充満
させるものとする。Thereafter, the hydrogen storage alloy sealed in the metal package is heated to release hydrogen, thereby filling the metal package with hydrogen.
本発明によれば、水素吸蔵合金ＩＯを加熱（７０℃〜８
０°Ｃ）することで、水素吸蔵合金ＩＯに吸蔵されてい
た水素が放出され、金属パッケージ内に充満する。According to the present invention, the hydrogen storage alloy IO is heated (from 70°C to 8°C).
0°C), the hydrogen stored in the hydrogen storage alloy IO is released and the metal package is filled.
この際、水素の熱伝導率は、空気、窒素等に較べて著し
く高いので、半導体チップの回路素子金属パッケージ内
の水素−金属パッケージという熱抵抗が小さい熱放出路
が形成される。At this time, since the thermal conductivity of hydrogen is significantly higher than that of air, nitrogen, etc., a heat dissipation path with low thermal resistance called a hydrogen-metal package is formed in the circuit element metal package of the semiconductor chip.
即ち、半導体チップの冷却性が向上する。That is, the cooling performance of the semiconductor chip is improved.
また、金属ケースはカバーによって気密に封止されてい
るので、金属パッケージ内に放出された水素が金属パッ
ケージの外に逃げることがない。Furthermore, since the metal case is hermetically sealed by the cover, hydrogen released within the metal package does not escape to the outside of the metal package.
一方、第２の発明は、水素が水素吸蔵合金中に吸蔵され
た状態で、窒素雰囲気中で金属ケースにカバーを封着し
、その後金属パッケージの外側から熱を加えて、水素を
放出させている。On the other hand, in the second invention, a cover is sealed to a metal case in a nitrogen atmosphere with hydrogen occluded in a hydrogen storage alloy, and then heat is applied from the outside of the metal package to release hydrogen. There is.
したがって、封着作業中及び封着後も水素が発火する恐
れがない。Therefore, there is no risk of hydrogen igniting during or after the sealing operation.
また、窒素雰囲気中でカバーの封着作業を実施している
ので、金属パッケージ内に酸素、或いは水分が封入され
ることがない。Furthermore, since the cover is sealed in a nitrogen atmosphere, oxygen or moisture will not be trapped inside the metal package.
以下図を参照しながら、本発明を具体的に説明する。な
お、全図を通じて同一符号は同一対象物を示す。The present invention will be specifically described below with reference to the drawings. Note that the same reference numerals indicate the same objects throughout the figures.
第１図は本発明の実施例の断面図、第２図は本発明の他
の実施例の斜視図である。FIG. 1 is a sectional view of an embodiment of the invention, and FIG. 2 is a perspective view of another embodiment of the invention.
図において、１０は、例えばラタン・鉄系等の多孔質合
金に、水素を吸蔵させた水素吸蔵合金である。In the figure, 10 is a hydrogen storage alloy in which hydrogen is stored in a porous alloy such as rattan or iron.
第１図に示すように、ステンレス鋼、或いは鉄ニツケル
−コバルト合金等よりなる上方が開口した浅い箱形の金
属ケース５に、ｌｓツメチックシールされたリード２を
、底板を貫通して配列させている。As shown in FIG. 1, the leads 2, which are sealed with ls tabs, are arranged in a shallow box-shaped metal case 5 made of stainless steel, iron-nickel-cobalt alloy, etc., and open at the top, passing through the bottom plate. ing.
そして、金属ケース５の底板に半導体チップ１をフェー
スアップにダンボンデングし、半導体チップ１の電極と
対応するリード２の頭部とを、金線等を介して接続して
いる。Then, the semiconductor chip 1 is bonded face up to the bottom plate of the metal case 5, and the electrodes of the semiconductor chip 1 and the heads of the corresponding leads 2 are connected via gold wires or the like.
一方、６は、ステンレス鋼、或いは鉄−ニッケルーコバ
ルト合金等の薄い角板状のカバーであって、カバー６の
内面に、予め角片状の水素吸蔵合金１０を接着剤を用い
て接着したり、或いは低温半田を用いて半田付けしてい
る。On the other hand, 6 is a thin rectangular plate-shaped cover made of stainless steel or iron-nickel-cobalt alloy, etc., and a rectangular hydrogen storage alloy 10 is previously adhered to the inner surface of the cover 6 using an adhesive. or soldered using low-temperature solder.
そして、窒素雰囲気中で金属ケース５の開口にカバー６
を被せ、カバー６の周縁を例えばレーザー溶接等して封
着することで、金属パッケージ内を気密に封止している
。Then, the cover 6 is inserted into the opening of the metal case 5 in a nitrogen atmosphere.
The inside of the metal package is hermetically sealed by covering the metal package with a periphery of the cover 6 and sealing the periphery of the cover 6 by, for example, laser welding.
その後、金属パッケージの外側から、カバー６部分に、
赤外線を照射する等して水素吸蔵合金ＩＯを７０℃〜８
０℃に加熱して、水素吸蔵合金１０から水素９を放出さ
せ、金属パッケージ内に水素９を充満させている。After that, from the outside of the metal package to the cover 6 part,
Heat the hydrogen storage alloy IO to 70°C to 8°C by irradiating it with infrared rays, etc.
The metal package is heated to 0° C. to release hydrogen 9 from the hydrogen storage alloy 10, thereby filling the metal package with hydrogen 9.
なお、水素の熱伝導率は、空気或いは窒素の熱伝導率の
約８倍と高い。Note that the thermal conductivity of hydrogen is about eight times higher than that of air or nitrogen.
したがって、半導体チップｌの回路素子−金属パッケー
ジ内の水素−カバー６、及び半導体チップｌの回路素子
−金属パッケージ内の水素−金属ケース５の側壁、とい
う熱抵抗が小さい熱放出路が形成される。Therefore, a heat release path with low thermal resistance is formed between the circuit element of the semiconductor chip l - hydrogen in the metal package - the cover 6, and the circuit element of the semiconductor chip l - hydrogen in the metal package - the side wall of the metal case 5. .
一方、金属ケース５はカバー６によって気密に封止され
ているので、金属ケース５内に放出された水素が、金属
パッケージの外に逃げる恐れがない。また、水素の単価
はヘリウムに較べて安い。On the other hand, since the metal case 5 is hermetically sealed by the cover 6, there is no fear that hydrogen released into the metal case 5 will escape to the outside of the metal package. Also, the unit price of hydrogen is lower than that of helium.
即ち、水素の消費量が少なくて、低コストの半導体装置
が得られる。That is, a semiconductor device with low hydrogen consumption and low cost can be obtained.
また、水素９が水素吸蔵合金１０中に吸蔵された状態で
、窒素雰囲気中で金属ケース５にカバー６をレーザー溶
接等して封着し、その後金属パッケージの外側から熱を
加えて、水素吸蔵合金１０中の水素を放出させているの
で、封着作業中及び封着後も水素が発火する恐れがない
。In addition, with the hydrogen 9 occluded in the hydrogen storage alloy 10, the cover 6 is sealed to the metal case 5 by laser welding or the like in a nitrogen atmosphere, and then heat is applied from the outside of the metal package to absorb hydrogen. Since the hydrogen in the alloy 10 is released, there is no risk of hydrogen igniting during or after the sealing operation.
さらにまた、・窒素雰囲気中でカバーの封着作業を実施
しているので、金属パッケージ内に空気中の酸素、或い
は水分封入される恐れが少ない。Furthermore, since the cover is sealed in a nitrogen atmosphere, there is little risk of oxygen or moisture being trapped in the metal package.
第２図において、５０は、ステンレス鋼、或いは鉄−ニ
ッケルーコバルト合金等よりなる上方が開口した浅い箱
形の金属ケースであって、その一方の側壁には、上方が
開口した小さい箱形の副室５を設けである。In FIG. 2, reference numeral 50 denotes a shallow box-shaped metal case with an open top made of stainless steel or iron-nickel-cobalt alloy, and one side wall has a small box-shaped metal case with an open top. A sub-chamber 5 is provided.
副室５１と金属ケース５０の主室とは、側壁に賽子した
細孔５２によって連通している。The auxiliary chamber 51 and the main chamber of the metal case 50 communicate with each other through a small hole 52 diced in the side wall.
金属ケース５０の主室にハラメチツクシールさｔたリー
ド２を、底板を貫通して配列させ、底板番：半導体チッ
プｌをフェースアップにダンボンデジグし、半導体チッ
プｌの電極と対応するリード２の頭部とを金線等を介し
て接続している。Arrange the leads 2 that have been sealed in a metal case 50 by penetrating the bottom plate in the main chamber of the metal case 50, and bond the bottom plate number: semiconductor chip 1 face up, and connect the leads 2 corresponding to the electrodes of the semiconductor chip 1. It is connected to the head via a gold wire or the like.
また、副室５１には水素吸蔵合金１０を投入してしる。Further, the hydrogen storage alloy 10 is put into the subchamber 51.
一方、５６は、ステンレス鋼、或いは鉄−ニックルーコ
バルト合金等の薄い平面視が凸形のカバーである。On the other hand, 56 is a thin cover made of stainless steel, iron-nickel-cobalt alloy, etc. and having a convex shape in plan view.
そして、窒素雰囲気中で金属ケース５０．副室５の開口
に共通するカバー５６を被せ、カバー５６の周縁を例え
ばレーザー溶接等して封着して、金属ウース５０及び副
室５１を気密に封止している。Then, the metal case 50. A common cover 56 is placed over the opening of the auxiliary chamber 5, and the periphery of the cover 56 is sealed by, for example, laser welding, thereby airtightly sealing the metal woofer 50 and the auxiliary chamber 51.
その後、副室５１の外側からカバー５６部分に、清外線
を照射して水素吸蔵合金１０を７０℃〜８（Ｙに加熱し
、水素吸蔵合金１０から水素を放出させて、細孔５２を
通して金属ケース５０内に水素を充満させている。Thereafter, the cover 56 portion is irradiated with clear external radiation from the outside of the subchamber 51 to heat the hydrogen storage alloy 10 to 70°C to 8 (Y) to release hydrogen from the hydrogen storage alloy 10 and pass through the pores 52 into the metal. The case 50 is filled with hydrogen.
上述のような構造のものは、副室５１側のみを加熱する
ので、半導体チップ１が高温となる恐れが少ないという
利点がある。The structure as described above heats only the side of the auxiliary chamber 51, so there is an advantage that there is little possibility that the semiconductor chip 1 will become high temperature.
以上説明したように本発明は、金属ケースにカバーを封
着後に、金属パッケージ内に封入した水素吸蔵合金を加
熱し水素を放出させて金属パッケージ内に水素を充満さ
れるものであるから、下記のような効果がある。As explained above, in the present invention, after sealing a cover to a metal case, the hydrogen storage alloy sealed in the metal package is heated to release hydrogen and the metal package is filled with hydrogen. There is an effect like.
水素の熱伝導率が高いので、半導体チップの回路素子−
金属パッケージ内の水素−金属パッケージという熱抵抗
が小さい熱放出路が形成され、半導体チップの冷却性が
向上する。Because hydrogen has high thermal conductivity, it can be used as a circuit element in semiconductor chips.
A heat dissipation path with low thermal resistance is formed between hydrogen in the metal package and the metal package, improving the cooling performance of the semiconductor chip.
また、金属ケースはカバーによって気密に封止されてい
るので、金属パッケージ内に放出された水素が、金属パ
ッケージの外に逃げる恐れがなく水素の消費量が少なく
低コストである。Furthermore, since the metal case is hermetically sealed by the cover, there is no risk that hydrogen released into the metal package will escape outside the metal package, resulting in low hydrogen consumption and low cost.
一方、第２の発明は、水素が水素吸蔵合金中に吸蔵され
た状態で、窒素雰囲気中で金属ケースにカバーを封着し
、その後金属パッケージ外側がら熱を加え水素を放出さ
せているので、封着作業中及び封着後も水素が発火する
恐れかない。On the other hand, in the second invention, a cover is sealed to a metal case in a nitrogen atmosphere with hydrogen stored in a hydrogen storage alloy, and then heat is applied from the outside of the metal package to release hydrogen. There is no risk of hydrogen igniting during or after sealing.
また、窒素雰囲気中でカバーの封着作業を実施している
ので、金属パッケージ内に空気中の酸素或いは水分が封
入されることが少なくて、半導体チップが酸化したり腐
食する恐れがない。Furthermore, since the cover is sealed in a nitrogen atmosphere, there is little chance that oxygen or moisture in the air will be trapped inside the metal package, and there is no risk of oxidation or corrosion of the semiconductor chip.
第１図は本発明の実施例の断面図、
第２図は本発明の他の実施例の斜視図、第３図は従来例
の断面図である。
図において、
■は半導体チップ、
２はリード、
５．５０は金属ケース、
６．５６はカバー
８は良熱伝導性気体、
９は水素、
１０は水素吸蔵合金、
５１は副室、
５２は細孔をそれぞれ示す。
本発明０ガ橙例のＩＩ′Ｔ面図
５１ 図
木光門の世の実施例Ｕ針凋図
暦 ２ 図
従来例の断面図
第３図FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a perspective view of another embodiment of the invention, and FIG. 3 is a sectional view of a conventional example. In the figure, ■ is a semiconductor chip, 2 is a lead, 5.50 is a metal case, 6.56 is a cover 8 is a gas with good thermal conductivity, 9 is hydrogen, 10 is a hydrogen storage alloy, 51 is a subchamber, 52 is a small Each hole is shown. II'T view of the present invention 0G orange example 51 Figure Mokkomon's embodiment U needle map calendar 2 Figure 3 Cross-sectional view of the conventional example
Claims (1)
封着するカバー（６）とからなる金属パッケージを備え
、 該金属パッケージに半導体チップ（１）が封止実装され
るとともに水素吸蔵合金（１０）が封入され、該水素吸
蔵合金（１０）が放出した水素（９）が、該金属パッケ
ージ内に充満されてなることを特徴とする半導体装置。 〔２〕金属ケースに半導体チップを実装し、窒素雰囲気
中で該金属ケースの開口にカバーを封着した後に、 金属パッケージ内に封入した水素吸蔵合金を加熱し水素
を放出させて、該金属パッケージ内に水素を充満させる
ようにしたことを特徴とする半導体チップのパッケージ
ング方法。[Scope of Claims] [1] A metal package consisting of a metal case (5) and a cover (6) sealed to an opening of the metal case (5), wherein a semiconductor chip (1) is sealed in the metal package. What is claimed is: 1. A semiconductor device characterized in that the metal package is fixedly mounted and a hydrogen storage alloy (10) is enclosed, and the metal package is filled with hydrogen (9) released by the hydrogen storage alloy (10). [2] After mounting a semiconductor chip in a metal case and sealing a cover over the opening of the metal case in a nitrogen atmosphere, the hydrogen storage alloy sealed in the metal package is heated to release hydrogen and the metal package is removed. A packaging method for a semiconductor chip, characterized in that the chip is filled with hydrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2270134A JPH04145648A (en) | 1990-10-08 | 1990-10-08 | Packaging method of semiconductor device of semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2270134A JPH04145648A (en) | 1990-10-08 | 1990-10-08 | Packaging method of semiconductor device of semiconductor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04145648A true JPH04145648A (en) | 1992-05-19 |
Family
ID=17482030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2270134A Pending JPH04145648A (en) | 1990-10-08 | 1990-10-08 | Packaging method of semiconductor device of semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04145648A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100225238B1 (en) * | 1996-12-06 | 1999-10-15 | 황인길 | Structure of csp and making method thereof |
| JP2010216943A (en) * | 2009-03-16 | 2010-09-30 | Japan Organo Co Ltd | Method and device for measuring concentration of dissolved nitrogen |
| RU183076U1 (en) * | 2017-11-30 | 2018-09-10 | Российская Федерация, от имени которой выступает Министерство промышленности и торговли Российской Федерации (Минпромторг России) | Case for microsystems for measuring current strength |
-
1990
- 1990-10-08 JP JP2270134A patent/JPH04145648A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100225238B1 (en) * | 1996-12-06 | 1999-10-15 | 황인길 | Structure of csp and making method thereof |
| JP2010216943A (en) * | 2009-03-16 | 2010-09-30 | Japan Organo Co Ltd | Method and device for measuring concentration of dissolved nitrogen |
| RU183076U1 (en) * | 2017-11-30 | 2018-09-10 | Российская Федерация, от имени которой выступает Министерство промышленности и торговли Российской Федерации (Минпромторг России) | Case for microsystems for measuring current strength |
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